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JPH022293B2 - - Google Patents
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JPH022293B2 - - Google Patents

Info

Publication number
JPH022293B2
JPH022293B2 JP59116057A JP11605784A JPH022293B2 JP H022293 B2 JPH022293 B2 JP H022293B2 JP 59116057 A JP59116057 A JP 59116057A JP 11605784 A JP11605784 A JP 11605784A JP H022293 B2 JPH022293 B2 JP H022293B2
Authority
JP
Japan
Prior art keywords
plating
lead
lead frame
tie bar
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59116057A
Other languages
Japanese (ja)
Other versions
JPS60260142A (en
Inventor
Mitsuhiro Myazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Industries Co Ltd
Original Assignee
Shinko Electric Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP59116057A priority Critical patent/JPS60260142A/en
Publication of JPS60260142A publication Critical patent/JPS60260142A/en
Publication of JPH022293B2 publication Critical patent/JPH022293B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/04Manufacture or treatment of leadframes
    • H10W70/042Etching

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明はリードフレームに関し、一層詳細に
は、必要部にのみ好適に部分めつきを施すことの
できるリードフレームに関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a lead frame, and more particularly to a lead frame that can suitably perform partial plating only on necessary parts.

(従来の技術) 半導体装置用のリードフレームに施されるめつ
きは、銀めつき、金めつき等の高価な貴金属めつ
きが多用されることから、コスト低減を図るべ
く、部分めつきが普及ししてきている。この部分
めつきを行う場合、必要な部分のみにめつきを施
すために、一般にリードフレームの表面側にはめ
つきエリアを囲んでマスク板で覆い、裏面側には
めつき液が回らぬようにシールする裏当て板を押
し当ててめつきを行うようにしている。
(Prior art) Plating applied to lead frames for semiconductor devices often uses expensive precious metal plating such as silver plating or gold plating, so partial plating has been developed to reduce costs. It is becoming popular. When performing this partial plating, in order to plate only the necessary areas, generally the front side of the lead frame is covered with a mask plate surrounding the plating area, and the back side is sealed to prevent the plating liquid from getting around. Plating is performed by pressing a backing plate against the plate.

第1図はこの場合のめつき装置であり、裏当て
板10とマスク板12とにより、リードフレーム
14をシールしながら、ノズル16からめつき液
を噴出させて部分めつきを行うものである。
FIG. 1 shows a plating apparatus in this case, which performs partial plating by spouting plating liquid from a nozzle 16 while sealing a lead frame 14 with a backing plate 10 and a mask plate 12.

(発明が解決しようとする課題) ところでリードフレーム14は第2図に示すよ
うに、リード部18間に間隙があることから、破
線で示すめつきエリアを除いて上記の裏当て板1
0とマスク板12とを押し当てて弾性的にシール
しても、上記間隙内入口部分までは有効にシール
が行えない。そのために上記間隙を伝わつてめつ
き液が矢印A方向に漏れ出し、第2図bに示され
るようにめつきエリア外のリード部18側面にま
ではみ出してめつきが施されることとなる。そし
てこのようなはみ出し部におけるめつき液は、両
側を裏当て板10とマスク板12とで囲まれてい
るから、撹拌条件や温度条件等のめつき条件に欠
け、はみ出し部におけるめつき皮膜は密着性に劣
るものとなり、そのために同図cに示されるよう
に、半導体装置組立時の衝撃などやサイクル的な
熱変動などによつて剥げて、リード部間の短絡事
故を招来する原因となつている。まためつきエリ
ア外にまではみ出してめつきされるから、金ある
いは銀等のめつき皮膜がそれだけ余計に付着し、
コストの低減が図れないという問題点もある。
(Problem to be Solved by the Invention) By the way, as shown in FIG. 2, the lead frame 14 has gaps between the lead parts 18.
Even if the mask plate 12 is pressed against the mask plate 12 for elastic sealing, effective sealing cannot be achieved up to the entrance portion of the gap. Therefore, the plating liquid leaks in the direction of arrow A through the gap, and as shown in FIG. 2b, the plating liquid protrudes to the side surface of the lead part 18 outside the plating area and is plated. Since the plating liquid in such an overhanging area is surrounded by the backing plate 10 and the mask plate 12 on both sides, plating conditions such as stirring conditions and temperature conditions are lacking, and the plating film on the overhanging area is This results in poor adhesion, and as a result, as shown in Figure c, it may peel off due to shocks during semiconductor device assembly or cyclical thermal fluctuations, leading to short-circuit accidents between the leads. ing. Also, since the plating extends beyond the plating area, more gold or silver plating film will adhere to it.
There is also the problem that cost reduction cannot be achieved.

さらには、半導体装置として組立てた際、樹脂
封止領域外にめつき皮膜が形成されていると、特
に銀めつきの場合はマイグレーシヨンの問題が生
じる。
Furthermore, when a semiconductor device is assembled, if a plating film is formed outside the resin-sealed region, a migration problem occurs, especially in the case of silver plating.

本発明は上記難点を解消すべくなされたもので
あり、その目的とするところは、必要なめつきエ
リア部にのみ好適に部分めつきが行え、半導体装
置としての信頼性向上にも資することができ、さ
らにはコストの低減化を図ることのできるリード
フレームを提供するにある。
The present invention has been made to solve the above-mentioned problems, and its purpose is to suitably perform partial plating only on the necessary plating areas, and to contribute to improving the reliability of the semiconductor device. Furthermore, it is an object of the present invention to provide a lead frame that can reduce costs.

(問題を解決するための手段) 上記目的による本発明では、表側と裏側から挾
まれて、マスク板で覆われないめつきエリア部分
が部分めつきされるリードフレームにおいて、め
つき液がリード部間の間〓内に流れ出さないよう
に、前記めつきエリア外縁に当たる部位に、隣接
するリード部との相対向する側面間の間〓を埋め
る絶縁部材から成るタイバーを設けたことを特徴
とする。
(Means for Solving the Problem) In the present invention according to the above object, in a lead frame in which the plating area portion that is not covered by the mask plate is partially plated by being sandwiched from the front side and the back side, the plating liquid is applied to the lead portion. A tie bar made of an insulating material is provided at a portion corresponding to the outer edge of the plating area to fill the gap between the opposing side surfaces of the adjacent lead part so as not to flow out into the space between the leads. .

(作用) 本発明によれば、必要なめつきエリア部のみに
好適に部分めつきが行え、コストの低減化を図る
ことができるうえに、従来のようにめつきエリア
外にはみ出してめつきされためつき皮膜が剥がれ
て、リード部を短絡するというおそれもなく、信
頼性の高い半導体装置として供することができ
る。
(Function) According to the present invention, it is possible to suitably perform partial plating only on the necessary plating area, thereby reducing costs. There is no fear that the build-up film will peel off and short-circuit the lead portions, and a highly reliable semiconductor device can be provided.

また、タイバーが絶縁性を有することからめつ
き終了後においてもタイバーを除去する必要がな
いのみならず、タイバーがリード部間の間〓内に
位置することから、リード部相互間の間隔が確実
に保持され、かつリード部の変形も防止されるこ
とから、リード部の短絡が確実に阻止されるとい
う相乗効果を奏する。
In addition, since the tie bar has insulating properties, there is no need to remove the tie bar even after plating is completed, and since the tie bar is located within the gap between the lead parts, the gap between the lead parts can be ensured. Since the lead portion is held and the deformation of the lead portion is also prevented, there is a synergistic effect of reliably preventing short-circuiting of the lead portion.

(実施例) 以下本発明の好適な実施例を添付図面に基づき
詳細に説明する。
(Embodiments) Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

第3図にリードフレーム20を示す。22はリ
ード部、24はステージ部、、26はステージ部
24を支持するステージサポートバーである。破
線内は部分めつきを施す部位のめつきエリアを示
す。リードフレーム20は通常のごとくプレイ加
工あるいはエツチングによつて形成する。
The lead frame 20 is shown in FIG. 22 is a lead part, 24 is a stage part, and 26 is a stage support bar that supports the stage part 24. The area within the broken line indicates the plating area of the part to which partial plating is applied. Lead frame 20 is formed by play machining or etching as usual.

上記のように、リードフレームの成形終了後
に、めつきエリア外縁に当たる部分に、リード部
22間、リード部22とステージサポートバー2
6間の各対向する側面間の間〓を埋めるように合
成樹脂などの絶縁部材によつてブリツジしてタイ
バー30を設ける。
As mentioned above, after the molding of the lead frame is completed, the part corresponding to the outer edge of the plating area is placed between the lead parts 22, between the lead part 22 and the stage support bar 2.
A tie bar 30 is provided by bridging with an insulating member such as a synthetic resin so as to fill the space between each of the opposing side surfaces of the tie bar 6.

しかして上記のタイバー30によつてリード部
22間およびリード部22とステージサポートバ
ー26との間の間隙が埋められているから、前記
の裏当て板10によつてリードフレーム20の裏
面側をシールし、また表面側は上記のめつきエリ
アを残してマスク板12によつてシールすること
によつて、めつきエリアが完全にシールされ、め
つき不要部のリード部22間等の間隙にめつき液
が漏れ出ることがなく、必要な部分のみに部分め
つきを行うことができるものである。
Since the gap between the lead parts 22 and the gap between the lead part 22 and the stage support bar 26 are filled by the tie bar 30, the back side of the lead frame 20 is covered by the backing plate 10. By sealing the surface side with the mask plate 12 while leaving the above-mentioned plating area, the plating area is completely sealed, and gaps such as between the lead parts 22 in areas where plating is not required are sealed. The plating solution does not leak out, and partial plating can be performed only on the necessary areas.

また本実施例においては、タイバーが絶縁性を
有することからめつき終了後においてもタイバー
30を除去する必要がないのみならず、リード部
22を束ねる効果を有し、特に昨今のようにリー
ド部22が狭小な間隙で多数本設けられているも
のにあつては、リード部22の変形が防止され、
リード部22相互間の短絡が阻止しうるという相
乗効果を奏するものである。
Furthermore, in this embodiment, since the tie bar has insulating properties, there is no need to remove the tie bar 30 even after plating is completed, and it also has the effect of bundling the lead portions 22. In the case where a large number of lead portions 22 are provided with narrow gaps, deformation of the lead portion 22 is prevented.
This provides a synergistic effect in that short circuits between the lead portions 22 can be prevented.

以上、本発明につき好適な実施例を挙げて種々
説明したが、本発明はこの実施例に限定されるも
のではなく、発明の精神を逸脱しない範囲内で多
くの改変を施し得るのはもちろんのことである。
The present invention has been variously explained above with reference to preferred embodiments, but the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. That's true.

(発明の効果) 以上のように本発明によれば、必要なめつきエ
リア部のみに好適に部分めつきが行え、コストの
低減化を図ることができるうえに、従来のように
めつきエリア外にはみ出してめつきされためつき
皮膜が剥がれて、リード部を短絡したり、マイグ
レーシヨンを引き起すというおそれもなく、信頼
性の高い半導体装置として供することができると
いう著効を奏する。
(Effects of the Invention) As described above, according to the present invention, it is possible to suitably perform partial plating only on the necessary plating area, thereby reducing costs. This has the remarkable effect that a highly reliable semiconductor device can be provided without the risk of the protruding, plated film peeling off and shorting the lead portion or causing migration.

また、タイバーが絶縁性を有することからめつ
き終了後においてもタイバーを除去する必要がな
いのみならず、タイバーがリード部間の間〓内に
位置することから、リード部相互間の間隔が確実
に保持され、かつリード部の変形も防止されるこ
とから、リード部の短絡が確実に阻止されるとい
う相乗効果を奏する。
In addition, since the tie bar has insulating properties, there is no need to remove the tie bar even after plating is completed, and since the tie bar is located within the gap between the lead parts, the gap between the lead parts can be ensured. Since the lead portion is held and the deformation of the lead portion is also prevented, there is a synergistic effect of reliably preventing short-circuiting of the lead portion.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は部分めつき装置の概要を示す説明図、
第2図はリードフレームの従来の部分めつきの状
態を示す説明図、第3図は本発明に係るリードフ
レームの実施例を示す部分図である。 10……裏当て板、12……マスク板、14…
…リードフレーム、16……ノズル、18……リ
ード部、20……リードフレーム、22……リー
ド部、24……ステージ部、26……ステージサ
ポートバー、30……タイバー。
FIG. 1 is an explanatory diagram showing an overview of a partial plating device;
FIG. 2 is an explanatory view showing a conventional partial plating state of a lead frame, and FIG. 3 is a partial view showing an embodiment of the lead frame according to the present invention. 10...Backing plate, 12...Mask plate, 14...
... Lead frame, 16 ... Nozzle, 18 ... Lead section, 20 ... Lead frame, 22 ... Lead section, 24 ... Stage section, 26 ... Stage support bar, 30 ... Tie bar.

Claims (1)

【特許請求の範囲】[Claims] 1 表側と裏側から挾まれて、マスク板で覆われ
ないめつきエリア部分が部分めつきされるリード
フレームにおいて、めつき液がリード部間の間〓
内に流れ出さないように、前記めつきエリア外縁
に当たる部位に、隣接するリード部との相対向す
る側面間の間〓を埋める絶縁部材から成るタイバ
ーを設けたことを特徴とするリードフレーム。
1. In a lead frame where the plating area that is not covered by the mask plate is partially plated between the front and back sides, the plating liquid is applied between the lead parts.
The lead frame is characterized in that a tie bar made of an insulating material is provided at a portion corresponding to the outer edge of the plating area to fill the gap between the opposing side surfaces of the adjacent lead part so as not to flow inward.
JP59116057A 1984-06-06 1984-06-06 Lead frame Granted JPS60260142A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59116057A JPS60260142A (en) 1984-06-06 1984-06-06 Lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59116057A JPS60260142A (en) 1984-06-06 1984-06-06 Lead frame

Publications (2)

Publication Number Publication Date
JPS60260142A JPS60260142A (en) 1985-12-23
JPH022293B2 true JPH022293B2 (en) 1990-01-17

Family

ID=14677633

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59116057A Granted JPS60260142A (en) 1984-06-06 1984-06-06 Lead frame

Country Status (1)

Country Link
JP (1) JPS60260142A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5014112A (en) * 1985-11-12 1991-05-07 Texas Instruments Incorporated Semiconductor integrated circuit device having mirror image circuit bars bonded on opposite sides of a lead frame
US5082802A (en) * 1985-11-12 1992-01-21 Texas Instruments Incorporated Method of making a memory device by packaging two integrated circuit dies in one package
JPH0777252B2 (en) * 1986-12-11 1995-08-16 三菱電機株式会社 Lead frame for semiconductor device
JP3553461B2 (en) 2000-04-27 2004-08-11 新光電気工業株式会社 Partial plating equipment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5223270A (en) * 1975-08-15 1977-02-22 Dainippon Printing Co Ltd Method of manufacturing lead frames for semiconductors
JPS53125938A (en) * 1977-04-12 1978-11-02 Toshiba Corp Plating method of lead frame
JPS5891650A (en) * 1981-11-26 1983-05-31 Toshiba Corp Semiconductor device
JPS58127356A (en) * 1982-01-26 1983-07-29 Nippon Texas Instr Kk Resin sealing of semiconductor integrated circuit and lead frame used for the same

Also Published As

Publication number Publication date
JPS60260142A (en) 1985-12-23

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