JPH022386B2 - - Google Patents
Info
- Publication number
- JPH022386B2 JPH022386B2 JP55046888A JP4688880A JPH022386B2 JP H022386 B2 JPH022386 B2 JP H022386B2 JP 55046888 A JP55046888 A JP 55046888A JP 4688880 A JP4688880 A JP 4688880A JP H022386 B2 JPH022386 B2 JP H022386B2
- Authority
- JP
- Japan
- Prior art keywords
- switching element
- thyristor
- resistor
- diode
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Description
【発明の詳細な説明】
本発明は、広巾のサイリスタゲート信号を供給
するサイリスタのゲート点弧装置の改良に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a thyristor gate ignition device that provides a wide thyristor gate signal.
インバータ装置等、電流の断続が予想される回
路にサイリスタを適用する場合、サイリスタのゲ
ート信号としては広巾のゲート信号が用いられる
が、このゲート点弧装置は、第１図に示すよう
に、ヒステリシス磁化特性を持つ磁性体を磁心と
する変圧器とスイツチング素子とで構成される。 When a thyristor is applied to a circuit where current is expected to be interrupted, such as an inverter, a wide gate signal is used as the gate signal for the thyristor. It consists of a transformer whose magnetic core is a magnetic material with magnetization properties and a switching element.
第１を参照しながら、従来のゲート点弧装置の
詳細を以下に説明する。第１図でＴ１はヒステリ
シス磁化特性をもつ磁性体を磁心としてもつ変圧
器であり、その一次巻線の中間タツプは限流用の
抵抗器Ｒ７を通して電源Vcに接続されている。
一次間線の両端はそれぞれスイツチング素子Ｑ
１，Ｑ２に接続され、これにて一次側の電流が断
続される。また同時に一次間線両端は抵抗器Ｒ
１，Ｒ２およびダイオードＤ３，Ｄ４を通してス
イツチング素子Ｑ３に接続され、Ｑ３の制御信号
viにより発振回路の動作、非動作が制御される。
またＤ３，Ｄ４の陽極からはそれぞれ、分圧抵
抗、Ｒ３，Ｒ５およびＲ４，Ｒ６で分圧された電
圧信号がＱ１，Ｑ２の制御端子に入り、Ｑ１，Ｑ
２の点弧、非点弧を制御している。Ｄ１，Ｄ２，
Ｄ５は回路動作安定化のためのダイオードであ
る。Ｔ１の２次巻線に誘起された電流は整流器
RECを通して被制御サイリスタTHYのゲートに
送られる。回路動作を第２図および第３図を用い
て説明する。第２図は、変圧器Ｔ１の磁心の磁化
特性を、第３図は回路各部の波形を示す。今、制
御信号viによりスイツチング素子Ｑ３がON状態
では、変圧器一次次巻線にはi1、i2がそれぞれＲ
２，Ｄ４およびＲ１，Ｄ３を通じて流れ、Ｑ１，
Ｑ２はOFF状態となるため、回路は非発振状態
にある。このとき、回路条件は対称になつている
ため、i1＝i2となり、変圧器Ｔ１の磁心の磁束は
以前の状態を保持するため、その方向、大きさは
不安定である。いまこの大きさをφ1とし第２図
に示す方向、大きさにあると仮定しvi＝０とし、
Ｑ３をOFFすると、Ｑ１，Ｑ２同時にONなろう
とするが、Ｑ１，Ｑ２特性バラツキにより、いず
れか一方が早くON状態となり、同時にもう片側
のスイツチング素子をOFFすることになるが、
この順序も、回路定数のバラツキによるのであり
不定である。今Ｑ１が先にONしたと仮定する
と、磁束な第３図ｂに示す如く、飽和点＋φsに向
つて直線的に増加し、＋φsに達すると、今度はＱ
２がONとなり、磁束は逆方向の飽和点ーφsに向
つて直線的に減少する。以下このくり返しにより
発振を続け、この発振によりＴ１の２次側に誘起
された電流は、整流器RECを通して整流された
電流igとなつてサイリスタTHYのゲートを点弧
するが、この波形は第３図ｆの如くなる。ここで
前述の如く、発振初期状態において、磁束の方向
および大きさ、スイツチング素子の点弧順序が不
定であるため、発振の第１パルスに、第３図ｆに
示した様な微少パルスが生する場合がある。従つ
て、このサイリスタゲード点弧装置を、インバー
タ装置等、主回路の電流立上りが大きい回路に用
いられているサイリスタに適用すると、ゲート電
流不足により、主電流が、サイリスタ素子のゲー
ト近傍に集中することによる局部過熱にてサイリ
スタが破損するという不具合があつた。 Details of a conventional gate ignition device will be described below with reference to the first example. In FIG. 1, T1 is a transformer having a magnetic core made of a magnetic material having hysteresis magnetization characteristics, and the intermediate tap of its primary winding is connected to the power source Vc through a current-limiting resistor R7.
Both ends of the primary line are connected to switching elements Q.
1, Q2, and the current on the primary side is thereby interrupted. At the same time, both ends of the primary line are resistors R.
1, R2 and diodes D3, D4 to the switching element Q3, and the control signal of Q3.
The operation and non-operation of the oscillation circuit are controlled by v i .
In addition, voltage signals divided by the voltage dividing resistors, R3, R5 and R4, R6 from the anodes of D3 and D4 enter the control terminals of Q1 and Q2, respectively.
The ignition and non-ignition of 2 are controlled. D1, D2,
D5 is a diode for stabilizing circuit operation. The current induced in the secondary winding of T1 is rectified by
It is sent to the gate of the controlled thyristor THY through REC. The circuit operation will be explained using FIGS. 2 and 3. FIG. 2 shows the magnetization characteristics of the magnetic core of the transformer T1, and FIG. 3 shows the waveforms of various parts of the circuit. Now, when the switching element Q3 is in the ON state due to the control signal v i , i 1 and i 2 are respectively R in the transformer primary winding.
Flows through 2, D4 and R1, D3, Q1,
Since Q2 is in the OFF state, the circuit is in a non-oscillating state. At this time, since the circuit conditions are symmetrical, i 1 =i 2 , and the magnetic flux of the magnetic core of the transformer T1 maintains its previous state, so its direction and magnitude are unstable. Now, let this size be φ 1 , assume that it is in the direction and size shown in Figure 2, and set v i =0,
When Q3 is turned off, Q1 and Q2 try to turn on at the same time, but due to variations in the characteristics of Q1 and Q2, one of them will turn on sooner and the other switching element will turn off at the same time.
This order also depends on variations in circuit constants and is undefined. Now, assuming that Q1 is turned on first, the magnetic flux increases linearly toward the saturation point +φ s , as shown in Figure 3b, and when it reaches +φ s , the Q
2 is turned ON, and the magnetic flux decreases linearly in the opposite direction toward the saturation point -φ s . After that, oscillation continues by repeating this process, and the current induced in the secondary side of T1 by this oscillation becomes a current i g rectified through the rectifier REC and fires the gate of the thyristor THY, but this waveform is It will look like Figure f. As mentioned above, in the initial state of oscillation, the direction and magnitude of the magnetic flux and the firing order of the switching elements are uncertain, so a minute pulse as shown in Figure 3f is generated in the first pulse of oscillation. There are cases where Therefore, if this thyristor gate ignition device is applied to a thyristor used in a circuit such as an inverter device where the main circuit has a large current rise, the main current will concentrate near the gate of the thyristor element due to insufficient gate current. There was a problem in which the thyristor was damaged due to local overheating.
本発明の目的は、上記不具合を解決する安価な
サイリスタゲート点弧装置を得る事にある。 An object of the present invention is to obtain an inexpensive thyristor gate ignition device that solves the above-mentioned problems.
すなわち本発明は、変圧器の一次巻線端より、
スイツチング素子の制御端子に夫々結合されてい
る抵抗器のうち、一方の抵抗器の抵抗値を方の抵
抗器の抵抗値より小さく形成するとともに、他方
の抵抗器に並列にコンデンサを接続するようにな
し所期の目的を達成するようにしたものである。
すなわち、非発振期間の変圧器の磁心の磁化方向
を、変圧器の一次巻線に流れる電流を不平衡させ
ることにより、特定方向に固定化、磁化を行な
い、非発振状態から発振状態に移るときに初期の
磁化方向と逆の方向に磁化する様に、始めに磁化
電流を流すために、２個のスイツチング素子の制
御端子の信号立上りを、片方を遅らせることによ
り、スイツチング素子の点弧順序を決定して、発
振初期から、安定したパルス巾のサイリスタゲー
ト信号を得る様にしたものである。 That is, in the present invention, from the primary winding end of the transformer,
Among the resistors connected to the control terminals of the switching element, the resistance value of one resistor is formed to be smaller than the resistance value of the other resistor, and a capacitor is connected in parallel to the other resistor. It is designed to achieve the intended purpose.
In other words, the magnetization direction of the magnetic core of the transformer during the non-oscillation period is fixed and magnetized in a specific direction by unbalancing the current flowing through the primary winding of the transformer, and when the state changes from the non-oscillation state to the oscillation state. In order to first pass a magnetizing current so that the magnetization direction is opposite to the initial magnetization direction, the firing order of the switching elements is controlled by delaying the rise of the signal at the control terminal of one of the two switching elements. This is so that a thyristor gate signal with a stable pulse width can be obtained from the initial stage of oscillation.
以下図面を参照しながら、本発明の具体的な一
実施例を、詳細に説明する。 A specific embodiment of the present invention will be described in detail below with reference to the drawings.
第４図は、本発明の具体的な一実施例である。
ここで、従来例の第１図と同一の部品番号は、同
一の部品を示す。本実施例においては、非発振時
の変圧器一次巻線の電流値を決定する抵抗器Ｒ１
およびＲ２の抵抗値のうち一方Ｒ１を、より少さ
い抵抗値の抵抗器Ｒ１′とし、非発振状態にて変
圧器一次巻線に流れる電流i1，i2をi1＜i2として磁
束方向および大きさを第５図のφ1′で示す点個定
し、次に、発振初期におけるスイツチング素子Ｑ
１，Ｑ２の動作順序は、抵抗器Ｒ２と並列に接続
されたコンデンサＣ２によつて、Ｑ２の制御端子
に加わる信号電圧はＱ１の制御端子に加わる信号
電圧よりも立上りが遅くなるため、Ｑ１が先に
ONとなり磁束は第６図ｂの如く、φ1′から＋φsま
で直線的に増化し、飽和に達するとＱ１がOFF、
Ｑ２がONとなり、以下これの繰り返しで発振が
行なわれる。このとき、発振初期のサイリスタゲ
ート電流igは第６図ｆの如くなり、発振初期から
充分巾の広いゲートパルス電流が得られることに
なる。 FIG. 4 shows a specific embodiment of the present invention.
Here, the same part numbers as in FIG. 1 of the conventional example indicate the same parts. In this embodiment, the resistor R1 determines the current value of the primary winding of the transformer during non-oscillation.
One of the resistance values of R1 and R2 is set as a resistor R1' with a smaller resistance value, and the currents i 1 and i 2 flowing in the primary winding of the transformer in a non-oscillating state are set as i 1 < i 2 and the magnetic flux direction is The point and size of the switching element Q at the initial stage of oscillation are determined individually as shown by φ 1 ' in FIG.
1. The operating order of Q2 is that the signal voltage applied to the control terminal of Q2 rises slower than the signal voltage applied to the control terminal of Q1 due to the capacitor C2 connected in parallel with the resistor R2. first
ON, the magnetic flux increases linearly from φ 1 ' to +φ s , as shown in Figure 6b, and when it reaches saturation, Q1 turns OFF.
Q2 is turned on, and oscillation is performed by repeating this process. At this time, the thyristor gate current i g at the beginning of oscillation becomes as shown in FIG. 6f, and a gate pulse current with a sufficiently wide width can be obtained from the beginning of oscillation.
以上に述べた様に、本発明によれば、発振器の
発振初期から安定した充分巾広いサイリスタゲー
トパルスが得られ、サイリスタの主電流立上り時
の微少ゲート電流によるサイリスタ素子局部過熱
によるサイリスタの破損を防止することが出来
る。また本実施例によれば、構成も極めて簡単で
あり、価格も安価である。 As described above, according to the present invention, a stable and sufficiently wide thyristor gate pulse can be obtained from the initial stage of oscillation of the oscillator, and damage to the thyristor due to local overheating of the thyristor element due to a minute gate current at the rise of the thyristor's main current can be prevented. It can be prevented. Further, according to this embodiment, the configuration is extremely simple and the price is low.
第１図は従来のサイリスタゲート点弧装置の回
路図、第２図は磁心のヒステリシス特性を示す説
明図、第３図は第１図における各部波形を示すタ
イムチヤート、第４図は、本発明の一実施例を示
す回路図、第５図は磁心の特性を示す説明図、第
６図は第４図における各部波形を示すタイムチヤ
ートである。
Ｒ１〜Ｒ７……抵抗器、Ｒ１′……抵抗器、Ｄ
１〜Ｄ５……ダイオード、Ｃ２……コンデンサ、
Ｑ１〜Ｑ３……スイツチング素子、Ｔ１……変圧
器、REC……整流器、THY……サイリスタ、Vc
……電源、vi……サイリスタゲート点弧装置制御
信号、φ1，φ1′……磁心の初期磁束、φs……磁心
の飽和磁束、e1，e2……変圧器の逆起電力、i1，
i2……変圧器の一次巻線電流、ig……サイリスタ
ゲート電流。
Fig. 1 is a circuit diagram of a conventional thyristor gate ignition device, Fig. 2 is an explanatory diagram showing the hysteresis characteristics of the magnetic core, Fig. 3 is a time chart showing waveforms of various parts in Fig. 1, and Fig. 4 is a diagram of the present invention. 5 is an explanatory diagram showing the characteristics of the magnetic core, and FIG. 6 is a time chart showing waveforms of various parts in FIG. 4. R1 to R7...Resistor, R1'...Resistor, D
1 to D5...Diode, C2...Capacitor,
Q1 to Q3... Switching element, T1... Transformer, REC... Rectifier, THY... Thyristor, V c
...power supply, v i ...thyristor gate ignition device control signal, φ 1 , φ 1 ′ ... initial magnetic flux of magnetic core, φs ... saturation magnetic flux of magnetic core, e 1 , e 2 ... back electromotive force of transformer , i 1 ,
i 2 ... primary winding current of transformer, i g ... thyristor gate current.
Claims (1)
と、ヒステリシス磁化特性をもつ磁性体の磁心、
第１の電源端子に接続された中間タツプを有する
一次巻線および両端が整流器を介して駆動すべき
サイリスタのゲート端子およびカソード端子に接
続された二次巻線からなる変圧器と、 一次巻線の一端と第２の電源端子との間に接続
した第１のスイツチング素子と、 一次巻線の他端と第２の電源端子との間に接続
した第２のスイツチング素子と、 一端が第２の電源端子に接続された第３のスイ
ツチング素子と、 カソード側が第３のスイツチング素子の他端に
接続され、アノード側が第１の抵抗を介して一次
巻線の他端に接続された第１のダイオードと、 カソード側が第３のスイツチング素子の他端に
接続され、アノード側が第２の抵抗を介して一次
巻線の一端に接続された第２のダイオードと、 カソード側が第１のスイツチング素子の制御端
子に接続され、アノード側が第３の抵抗を介して
第１のダイオードのアノード側に接続された第３
のダイオードと、 カソード側が第２のスイツチング素子の制御端
子に接続され、アノード側が第４の抵抗を介して
第２のダイオードのアノード側に接続された第４
のダイオードと、 を具備するものにおいて、 第２の抵抗の抵抗値を第１の抵抗のそれより大
きくすると共に、第２の抵抗にコンデンサを並列
接続したことを特徴とするサイリスタのゲート点
弧装置。[Claims] 1: a first power terminal; a second power terminal having a lower potential than the first power terminal; and a magnetic core of a magnetic material having hysteresis magnetization characteristics;
a transformer consisting of a primary winding with an intermediate tap connected to a first power supply terminal and a secondary winding connected at both ends to the gate and cathode terminals of a thyristor to be driven via a rectifier; a first switching element connected between one end and the second power supply terminal; a second switching element connected between the other end of the primary winding and the second power supply terminal; a third switching element connected to the power supply terminal of the third switching element; and a first switching element whose cathode side is connected to the other end of the third switching element and whose anode side is connected to the other end of the primary winding via the first resistor. a second diode whose cathode side is connected to the other end of the third switching element and whose anode side is connected to one end of the primary winding via a second resistor; and a cathode side which controls the first switching element. a third diode connected to the terminal and whose anode side is connected to the anode side of the first diode via the third resistor.
a fourth diode whose cathode side is connected to the control terminal of the second switching element and whose anode side is connected to the anode side of the second diode via a fourth resistor.
A gate ignition device for a thyristor, comprising: a diode; .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4688880A JPS56145771A (en) | 1980-04-11 | 1980-04-11 | Gate firing unit for thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4688880A JPS56145771A (en) | 1980-04-11 | 1980-04-11 | Gate firing unit for thyristor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56145771A JPS56145771A (en) | 1981-11-12 |
| JPH022386B2 true JPH022386B2 (en) | 1990-01-17 |
Family
ID=12759896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4688880A Granted JPS56145771A (en) | 1980-04-11 | 1980-04-11 | Gate firing unit for thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56145771A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5376736A (en) * | 1976-12-20 | 1978-07-07 | Hitachi Ltd | Gate pulse generation circuit |
-
1980
- 1980-04-11 JP JP4688880A patent/JPS56145771A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56145771A (en) | 1981-11-12 |
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