JPH0247849B2 - - Google Patents
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- Publication number
- JPH0247849B2 JPH0247849B2 JP56177394A JP17739481A JPH0247849B2 JP H0247849 B2 JPH0247849 B2 JP H0247849B2 JP 56177394 A JP56177394 A JP 56177394A JP 17739481 A JP17739481 A JP 17739481A JP H0247849 B2 JPH0247849 B2 JP H0247849B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate temperature
- minutes
- increase
- mobility
- rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3422—Antimonides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
Landscapes
- Physical Vapour Deposition (AREA)
- Hall/Mr Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
本発明はInSb系混合結晶薄膜の製造方法に関
するものである。更に詳しくいえば、InSb化合
物結晶とIn単体結晶とからなり、向上した電気特
性を有するInSb系混合結晶薄膜の製造方法に関
するものである。
一般にInSbの薄膜は、InSbの移動度が常温で
78，000cm2／Vsと大きいために、ホール素子や磁
気抵抗素子の素材として優れていることが知られ
ている。そして最近のダイレクトドライブモータ
ー用の位置検出素子としてのホール素子や、無接
点ポテンシヨメーターとしての磁気抵抗素子等の
発展にはめざましいものがある。
本発明者らは先に、ホール素子や磁気抵抗素子
等の素材として大変優れた、新規なInSb複合結
晶半導体、及びその製造方法を提案した。（特願
昭56−46962，56−50294，56−58724等）
本発明はこれらのInSb複合結晶半導体の製造
法を更に改善したものであり、特に基板温度の上
昇速度に制限を加えることにより、前記製造法の
工業的生産性を一段と向上させる方法に関するも
のである。
従来InSbは−族化合物半導体としてよく
知られた物質であり、ホール素子や磁気抵抗素子
として利用するには、インジウム元素（In）のア
ンチモン元素（Sb）に対する原子比が1.00の結晶
であることが必要不可欠の条件であり、かかる条
件の場合にその特性が高度に発揮されると考えら
れてきたため、かかる考えに立脚して多くの研究
がなされてきた。
しかし、本発明者らは、先にInとSbの原子比
が厳密に１対１に制御された場合のみ優れた薄膜
が得られるのではなく、Inが過剰の場合にも、特
にInのSbに対する原子比が1.1〜1.7の範囲にある
ならば結晶性に優れ、しかも高い移動度を示す複
合結晶が得られるという従来の技術概念からは到
底予測し得ない新事実を見出した。
かかる新しい知見に基く優れたInSb系複合結
晶薄膜は、InとSbとをSb対Inの到達速度比（ア
ライバル・レート・レーシヨ以下AIo／ASbと略記
する）が1.10〜1.70の条件下で基板上に蒸着する
ことによつて製造することができ、更に蒸着初期
の基板温度を、式
１／Ｔ＝9.98×10-4−5.66×10-5logP
〔ここに、Ｔは極限の基板温度（絶対温度）Ｐは
蒸着中の真空度（Torr）である〕
で与えられる極限の基板温度よりも低い温度に設
定することにより、電気特性を向上させることが
できる。
しかし先の方法によつて、有用性に特に優れた
移動度20，000cm2／Ｖ・Ｓ以上の薄膜が得られる
AIo／ASbの範囲は1.28〜1.52と0.24の幅しか持つ
ていなかつた（第３図参照）。本発明者らはInSb
系複合結晶薄膜の工業的生産性を向上させるため
には、有用性に特に優れた20，000cm2／Ｖ・Ｓ以
上の薄膜の得られるAIo／ASbの範囲を広くするこ
とが肝要であると考え、鋭意検討を行なつた結
果、本発明をなすに至つた。
すなわち本発明は、蒸着初期の基板温度を、式
１／Ｔ＝9.98×10-4−5.66×10-5logP
〔ここに、Ｔは極限の基板温度（絶対温度）、Ｐ
は蒸着中の真空度（Torr）である〕
で与えられる極限の基板温度よりも低い温度に設
定し、初期を除く蒸着時間帯の少なくとも１部分
で５℃／min〜50℃／minから選ばれた基板温度
上昇速度の領域を有する階段的基板温度上昇法を
用いてインジウムとアンチモンとを、基板上での
アンチモン対インジウムの到達速度比が、1.05〜
1.70となる条件下で蒸着させることを特徴とす
る、InSb系複合結晶薄膜の製造法を提供するも
のである。
本発明を用いて蒸着を行つた結果、有用性に優
れた移動度10，000cm2／Ｖ・Ｓ以上の薄膜が得ら
れるAIo／ASbの範囲は、1.05〜1.70となつた（第
２図参照）。そして有用性に特に優れた移動度20，
000cm2／Ｖ・Ｓ以上の薄膜が得られるAIo／ASbの
範囲は、1.13〜1.62となり、0.49の幅を持つてい
た（第２図参照）。該幅は、先に提案した方法に
よる幅（0.24）の実に２倍以上の広いものであ
る。
本発明にいう階段的基板温度上昇法とは、基板
温度の上昇パターンが階段状であり、上昇速度が
大である時間領域と、小である領域が交互に設け
られているものである（第１図参照）。少なくと
も１部分に設けられる５℃／min〜50℃／minか
ら選ばれた上昇速度の領域は、前記の上昇速度が
大である時間領域に相当する。前記の上昇速度が
小である時間領域では、上昇速度は５℃／minよ
り小さく選ばれるが、階段状パターンを際立たせ
る上では０℃／min〜３℃／minから選ぶのが良
い。また制御の都合上、階段状パターンの角の部
分は、滑らかな曲線になつていてもよい（第１図
破線部参照）。
初期を除く蒸着時間帯中に少なくとも１部分で
設けられる領域における基板温度の上昇速度は５
℃／min〜50℃／minから選ばれた上昇速度であ
る。該上昇速度が50℃／minより小さいと、前記
のAIo／ASbの幅が小さくなつてしまうし、50℃／
minより大きいと膜がぼろぼろになつたり、くす
んだりする。基板温度の制御の難易を考慮する
と、前記上昇速度は５℃／min〜30℃／minから
選ばれた上昇速度である方がより好ましい。
前記領域の時間は、蒸着時間帯における最初と
最後の基板温度の差、蒸着時間、並びに設ける回
数により異なるが、10秒〜30分が好ましい。10秒
より短かいと基板温度の制御が困難であるし、30
分より長いと工業的生産性が低下する。
前記領域を設ける回数は１回以上であればよく
５回でも10回でもよいが、領域の時間、蒸着時間
帯における最初と最後の基板温度の差、並びに蒸
着時間と密接に関連している。しかし作業の繁雑
さを嫌うならば少ない方が好ましい。
また本発明は先に提案したInSb系混合結晶の
製造方法（特願昭56−72464）と組み合わせるこ
とにより、有用性に極めて優れた移動度25，000
cm2／Ｖ・Ｓ以上の薄膜を工業的生産性良く製造す
る方法を提供する。すなわち、先に提案した方法
ではN2の存在下で蒸着を行なうことによつて、
25，000cm2／Ｖ・Ｓ以上の移動度を有する薄膜の
製造が可能となつたが、これに本発明を組み合わ
せるならば、移動度25，000cm2／Ｖ・Ｓ以上の薄
膜が得られるAIo／ASbの幅が広くなるために、有
用性に極めて優れた薄膜を工業的生産性良く製造
することができるわけである。
以下に実施例を用いて本発明を更に詳細に説明
する。
実施例 １
６枚のウエーハーが同心円上に設置でき、回転
する基板ホルダーを有する真空蒸着装置を使用し
て蒸着を行なつた。基板温度はウエーハー上10mm
の所に設けられたPt−Rdサーモカツプルで検知
され、また別のサーモカツプルを制御用に設け
た。
基板としては雲母を用いた。原料In，Sbは共
にフルウチ化学社製６−Ｎのものを用いた。
蒸着に当つては、最初に真空度を２×
10-6Torrにし、基板温度を380℃に設定した。次
に基板温度を480℃まで上昇させながら40分間蒸
着を行ない、膜厚が1.0μｍ程度になるようにし
た。40分の蒸着時間のうち、蒸着開始後12分〜18
分の基板板温度の上昇速度を10℃／minとし、上
記以外の時間は、１〜２℃／minとした。
この条件下で、AIo／ASbを1.00〜1.75の範囲と
して、28回の蒸着を行ないできた膜を第１図のよ
うにパターニングして移動度を測定した。そし
て、横軸にAIo／ASbをとり、縦軸に移動度μｍを
とつて第２図を得た。その結果、移動度が10，
000cm2／Ｖ・Ｓ以上となり、有用なInSb系混合結
晶薄膜のできるAIo／ASbの範囲は1.05〜1.70であ
つた。更に移動度が20，000cm2／Ｖ・Ｓ以上とな
り、特に有用な薄膜のできるAIo／ASbの範囲は、
1.13〜1.62で0.49の幅をもつていた。
比較例 １
基板温度の上昇速度を蒸着時間の全域にわたつ
て２〜３℃／minと設定する以外は、実施例１と
同様に蒸着を行つた。18回の蒸着の結果第３図を
得たが、移動度が20，000cm2／Ｖ・Ｓ以上となる
AIo／ASbの範囲は、1.28〜1.52であつた。
実施例 ２〜５
装置、基板、原料については、実施例１と同様
のものを用いた。蒸着時間は30分で基板温度を
400℃からスタートして最終温度を480℃にした。
そしてその間の基板温度上昇速度を蒸着開始後０
分〜10分、12〜20分、22分〜30分は１〜２℃／
min、10分〜12分は12〜14℃／min、20分〜22分
は６〜７℃／minとした。この条件下でAIo／ASb
を1.07、1.25、１・38、1.56として膜厚が1μｍ程
度になるように蒸着を行つた膜の移動度を測定し
た。その結果を第１表に示す。
The present invention relates to a method for manufacturing an InSb mixed crystal thin film. More specifically, the present invention relates to a method for producing an InSb-based mixed crystal thin film that is composed of an InSb compound crystal and an In single crystal and has improved electrical properties. In general, in InSb thin films, the mobility of InSb is low at room temperature.
Due to its large value of 78,000 cm 2 /Vs, it is known to be an excellent material for Hall elements and magnetoresistive elements. Recently, there have been remarkable developments in Hall elements as position detection elements for direct drive motors, magnetoresistive elements as non-contact potentiometers, etc. The present inventors previously proposed a novel InSb composite crystal semiconductor that is excellent as a material for Hall elements, magnetoresistive elements, etc., and a method for manufacturing the same. (Patent Applications No. 56-46962, No. 56-50294, No. 56-58724, etc.) The present invention further improves the manufacturing method of these InSb composite crystal semiconductors, and in particular, by limiting the rate of increase in substrate temperature, The present invention relates to a method for further improving the industrial productivity of the manufacturing method. Conventionally, InSb is a well-known material as a − group compound semiconductor, and in order to be used as a Hall element or a magnetoresistive element, a crystal with an atomic ratio of indium element (In) to antimony element (Sb) of 1.00 is required. It has been thought that this is an essential condition, and that its properties are highly exhibited under such conditions, and many studies have been conducted based on this idea. However, the present inventors have found that excellent thin films are not only obtained when the atomic ratio of In and Sb is strictly controlled to 1:1, but also when In is in excess, especially when the Sb of In is We have discovered a new fact that could not have been predicted from conventional technical concepts: if the atomic ratio to 1.1 to 1.7 is in the range of 1.1 to 1.7, a composite crystal with excellent crystallinity and high mobility can be obtained. An excellent InSb-based composite crystal thin film based on this new knowledge is produced by combining In and Sb under conditions where the arrival rate ratio of Sb to In (arrival rate ratio, hereinafter abbreviated as A Io /A Sb ) is 1.10 to 1.70. It can be manufactured by vapor deposition on a substrate, and the substrate temperature at the initial stage of vapor deposition can be calculated using the formula 1/T=9.98×10 -4 −5.66×10 -5 logP [Here, T is the ultimate substrate temperature (absolute temperature) P is the degree of vacuum (Torr) during vapor deposition] By setting the temperature to be lower than the ultimate substrate temperature given by (absolute temperature), the electrical characteristics can be improved. However, by the above method, a thin film with a mobility of 20,000 cm 2 /V・S or more, which is particularly useful, can be obtained.
The range of A Io /A Sb was 1.28 to 1.52, which was only 0.24 (see Figure 3). InSb
In order to improve the industrial productivity of composite crystalline thin films, it is important to widen the range of A Io /A Sb in which thin films of 20,000 cm 2 /V S or higher, which are particularly useful, can be obtained. As a result of intensive study, we have come up with the present invention. That is, the present invention calculates the substrate temperature at the initial stage of vapor deposition using the formula 1/T=9.98×10 -4 −5.66×10 -5 logP [where T is the ultimate substrate temperature (absolute temperature), P
is the degree of vacuum during deposition (Torr)], and the temperature is set at a temperature lower than the ultimate substrate temperature given by Indium and antimony are mixed using a stepwise substrate temperature increase method with a range of substrate temperature increase rates, and the arrival rate ratio of antimony to indium on the substrate is 1.05 ~
The present invention provides a method for producing an InSb-based composite crystal thin film, which is characterized in that the film is deposited under conditions of 1.70. As a result of vapor deposition using the present invention, the range of A Io /A Sb in which a highly useful thin film with a mobility of 10,000 cm 2 /V S or more was obtained was 1.05 to 1.70 (second (see figure). And mobility 20, which is especially useful
The range of A Io /A Sb in which a thin film of 000 cm 2 /V·S or more was obtained was 1.13 to 1.62, with a width of 0.49 (see FIG. 2). This width is actually more than twice as wide as the width (0.24) obtained by the previously proposed method. The stepwise substrate temperature increase method referred to in the present invention is one in which the substrate temperature increase pattern is step-like, and time regions where the rate of increase is high and time periods where the rate of increase is small are provided alternately. (See Figure 1). The rising speed region selected from 5° C./min to 50° C./min provided in at least one portion corresponds to the time region in which the rising speed is high. In the time range where the rising rate is low, the rising rate is selected to be less than 5°C/min, but in order to make the step pattern stand out, it is preferably selected from 0°C/min to 3°C/min. Further, for convenience of control, the corner portions of the step-like pattern may be formed into smooth curves (see broken lines in FIG. 1). The rate of increase in substrate temperature in the region provided in at least one part during the deposition period excluding the initial stage is 5.
The rate of increase is selected from ℃/min to 50℃/min. If the rate of increase is less than 50℃/min, the above-mentioned width of A Io /A Sb will become small, and if the rate of increase is less than 50℃/min,
If it is larger than min, the film will become tattered or dull. Considering the difficulty in controlling the substrate temperature, it is more preferable that the rate of increase is selected from 5° C./min to 30° C./min. The time for the above region varies depending on the difference between the initial and final substrate temperatures in the evaporation time period, the evaporation time, and the number of times it is provided, but is preferably 10 seconds to 30 minutes. If it is shorter than 10 seconds, it will be difficult to control the substrate temperature;
If it is longer than 1 minute, industrial productivity will decrease. The number of times the region is formed may be one or more times, and may be five or ten times, but it is closely related to the time of the region, the difference in substrate temperature between the beginning and end of the evaporation period, and the evaporation time. However, if you dislike the complexity of work, fewer is better. Furthermore, by combining the method of manufacturing InSb-based mixed crystals proposed previously (Japanese Patent Application No. 72464/1986), the present invention has achieved a mobility of 25,000 which is extremely useful.
Provided is a method for producing thin films of cm 2 /V·S or higher with good industrial productivity. That is, in the method proposed earlier, by performing the deposition in the presence of N2 ,
It has become possible to produce a thin film with a mobility of 25,000cm 2 /V・S or more, but if this invention is combined with this, a thin film with a mobility of 25,000cm 2 /V・S or more can be obtained. Because the width of Io /A Sb becomes wider, it is possible to produce extremely useful thin films with good industrial productivity. The present invention will be explained in more detail below using Examples. Example 1 Vapor deposition was carried out using a vacuum evaporation apparatus in which six wafers could be placed concentrically and had a rotating substrate holder. Substrate temperature is 10mm above the wafer
It was detected by a Pt-Rd thermocouple installed at the location, and another thermocouple was installed for control. Mica was used as the substrate. The raw materials In and Sb were both manufactured by Furuuchi Chemical Co., Ltd. 6-N. For vapor deposition, first increase the degree of vacuum to 2x.
The temperature was set at 10 -6 Torr and the substrate temperature was set at 380°C. Next, vapor deposition was carried out for 40 minutes while raising the substrate temperature to 480° C., so that the film thickness was approximately 1.0 μm. 12 to 18 minutes after the start of evaporation out of 40 minutes of evaporation time
The rate of increase in temperature of the substrate was set at 10° C./min for the duration of the test, and at 1 to 2° C./min for the other times. Under these conditions, the film was deposited 28 times with A Io /A Sb in the range of 1.00 to 1.75, and the film was patterned as shown in FIG. 1, and its mobility was measured. Then, FIG. 2 was obtained by plotting A Io /A Sb on the horizontal axis and mobility μm on the vertical axis. As a result, the mobility is 10,
000 cm 2 /V·S or more, and the range of A Io /A Sb from which a useful InSb-based mixed crystal thin film was obtained was 1.05 to 1.70. Furthermore, the range of A Io /A Sb in which a particularly useful thin film with a mobility of 20,000 cm 2 /V S or more can be obtained is as follows.
It had a width of 0.49 between 1.13 and 1.62. Comparative Example 1 Vapor deposition was performed in the same manner as in Example 1, except that the rate of increase in substrate temperature was set at 2 to 3° C./min over the entire vapor deposition time. Figure 3 was obtained as a result of 18 depositions, and the mobility was more than 20,000cm 2 /V・S.
The range of A Io /A Sb was 1.28 to 1.52. Examples 2 to 5 The same devices, substrates, and raw materials as in Example 1 were used. The deposition time is 30 minutes and the substrate temperature is
Starting at 400°C, the final temperature was 480°C.
During that time, the rate of increase in substrate temperature is set to 0 after the start of evaporation.
Minutes to 10 minutes, 12 to 20 minutes, 22 minutes to 30 minutes: 1 to 2℃/
min, 12 to 14°C/min for 10 to 12 minutes, and 6 to 7°C/min for 20 to 22 minutes. Under this condition A Io /A Sb
The mobility of films deposited to a film thickness of approximately 1 μm was measured with the values of 1.07, 1.25, 1·38, and 1.56. The results are shown in Table 1.
【表】
実施例 ６〜８
装置、基板、原料については実施例１と同様と
した。まず真空度を１×10-6Torrにし基板温度
を400℃に設定し、次いでニードルバルブにより
窒素を導入して真空度を７×10-5Torrとし、ニ
ードルバルブをそのまま固定した。次にInとSb
を蒸発させながら基板温度上昇速度を実施例２〜
５と同様にして500℃まで上昇させ、30分間で膜
厚が1μｍ程度になるように蒸着した。この条件
下でAIo／ASbを1.20、1.41、1.53として得られた
膜の移動度を測定した。その結果を第２表に示
す。[Table] Examples 6 to 8 The equipment, substrate, and raw materials were the same as in Example 1. First, the degree of vacuum was set at 1×10 −6 Torr and the substrate temperature was set at 400° C. Next, nitrogen was introduced through a needle valve to make the degree of vacuum 7×10 −5 Torr, and the needle valve was fixed as it was. Next, In and Sb
Example 2 - The rate of increase in substrate temperature while evaporating
The temperature was raised to 500° C. in the same manner as in Step 5, and the film was deposited to a thickness of about 1 μm in 30 minutes. Under these conditions, the mobilities of the membranes obtained were measured with A Io /A Sb of 1.20, 1.41, and 1.53. The results are shown in Table 2.
【表】
比較例 ２〜５
基板温度上昇速度を30分の蒸着時間の全域にわ
たつて３〜４℃／minとする以外は実施例５〜７
と同様の条件下で、AIo／ASbを0.95、1.18、1.33、
1.60として得られた膜の移動度を測定した結果を
第３表に示す。[Table] Comparative Examples 2 to 5 Examples 5 to 7 except that the substrate temperature increase rate was 3 to 4°C/min over the entire 30 minute vapor deposition time.
Under similar conditions, A Io /A Sb is 0.95, 1.18, 1.33,
Table 3 shows the results of measuring the mobility of the membrane obtained as 1.60.
【表】
実施例 ９〜11
装置、基板、原料については、実施例１と同様
のものを用いた。まず真空度を２×10-6Torrに
し、基板温度を380℃に設定した上で、ニードル
バルブにより窒素を導入して真空度を５×
10-5Torrとし、ニードルバルブをそのまま固定
した。次にInとSbを蒸発させながら階段的基板
温度上昇法を用いて、20分間で膜厚が1.5μｍ程度
になるように蒸着した。この際、基板温度上昇速
度は蒸着開始後０分〜８分及び11分〜20分は０
℃／min〜２℃／minとし、８分〜11分は30℃／
min〜40℃／minとして最終温度500℃まで基板
温度を上昇させた。この条件下でAIo／ASbを
1.15、1.37、1.52として得られた膜の移動度を測
定した。その結果を第４表に示す。[Table] Examples 9 to 11 The same equipment, substrates, and raw materials as in Example 1 were used. First, the degree of vacuum is set to 2×10 -6 Torr, the substrate temperature is set to 380℃, and nitrogen is introduced using a needle valve to increase the degree of vacuum to 5×.
The pressure was set to 10 -5 Torr, and the needle valve was fixed as it was. Next, while evaporating In and Sb, a stepwise substrate temperature increase method was used to deposit the film to a thickness of about 1.5 μm in 20 minutes. At this time, the substrate temperature increase rate is 0 minutes to 8 minutes and 11 minutes to 20 minutes after the start of vapor deposition.
℃/min to 2℃/min, and 30℃/min for 8 minutes to 11 minutes.
The substrate temperature was increased to a final temperature of 500°C at a rate of min to 40°C/min. Under this condition, A Io /A Sb
The mobilities of the obtained membranes were measured as 1.15, 1.37, and 1.52. The results are shown in Table 4.
第１図は階段的基板温度上昇法における基板温
度の変化を示すグラフ、第２図は本発明実施例の
AIo／ASbと移動度との関係を示すグラフ、第３図
は比較例のAIo／ASbと移動度との関係を示すグラ
フである。
Figure 1 is a graph showing the change in substrate temperature in the stepwise substrate temperature increase method, and Figure 2 is a graph showing the change in substrate temperature in the stepwise substrate temperature increase method.
A graph showing the relationship between A Io /A Sb and mobility. FIG. 3 is a graph showing the relationship between A Io /A Sb and mobility in a comparative example.
Claims (1)
Ｐは蒸着中の真空度（Torr）である〕 で与えられる極限の基板温度よりも低い温度に設
定し、初期を除く蒸着時間帯の少なくとも１部分
で５℃／min〜50℃／minから選ばれた基板温度
上昇速度の領域を有する階段的基板温度上昇法を
用いて、インジウムとアンチモンとを、基板上で
のアンチモン対インジウムの到達速度比が、1.05
〜1.70となる条件下で蒸着させることを特徴とす
る、インジウム−アンチモン系複合結晶薄膜の製
造法。 ２ 初期を除く蒸着時間帯の少なくとも１部分
で、５℃／min〜30℃／minから選ばれた基板温
度上昇速度の領域を有する階段的基板温度上昇法
を用いる特許請求の範囲第１項記載の方法。[Claims] 1 The substrate temperature at the initial stage of evaporation is expressed by the formula 1/T=9.98×10 -4 −5.66×10 -5 logP [where T is the ultimate substrate temperature (absolute temperature),
P is the degree of vacuum during deposition (Torr)] Set the temperature to be lower than the ultimate substrate temperature given by Using a stepwise substrate temperature increase method with a substrate temperature increase rate region of
1. A method for producing an indium-antimony composite crystal thin film, characterized in that the film is deposited under conditions of ~1.70. 2. Claim 1 uses a stepwise substrate temperature increase method having a substrate temperature increase rate range selected from 5°C/min to 30°C/min during at least part of the deposition time period excluding the initial stage. the method of.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56177394A JPS5878418A (en) | 1981-11-05 | 1981-11-05 | Preparation of indium-antimony system compound crystal thin film |
| US06/361,939 US4468415A (en) | 1981-03-30 | 1982-03-25 | Indium-antimony complex crystal semiconductor and process for production thereof |
| AT82102605T ATE20629T1 (en) | 1981-03-30 | 1982-03-27 | INDIUM-ANTIMONY SEMICONDUCTOR WITH COMPLEX CRYSTALLINE STRUCTURE AND PROCESS FOR ITS PRODUCTION. |
| EP82102605A EP0062818B2 (en) | 1981-03-30 | 1982-03-27 | Process of producing a hall element or magnetoresistive element comprising an indium-antimony complex crystal semiconductor |
| DE8282102605T DE3271874D1 (en) | 1981-03-30 | 1982-03-27 | Indium-antimony complex crystal semiconductor and process for production thereof |
| KR8201347A KR860000161B1 (en) | 1981-03-30 | 1982-03-29 | Indium antimony composite crystal semiconductor and its manufacturing method |
| US06/620,645 US4539178A (en) | 1981-03-30 | 1984-06-14 | Indium-antimony complex crystal semiconductor and process for production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56177394A JPS5878418A (en) | 1981-11-05 | 1981-11-05 | Preparation of indium-antimony system compound crystal thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5878418A JPS5878418A (en) | 1983-05-12 |
| JPH0247849B2 true JPH0247849B2 (en) | 1990-10-23 |
Family
ID=16030160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56177394A Granted JPS5878418A (en) | 1981-03-30 | 1981-11-05 | Preparation of indium-antimony system compound crystal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5878418A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7567078B2 (en) | 2004-12-28 | 2009-07-28 | Asahi Kasei Emd Corporation | Magnetic rotation-angle sensor and angle-information processing device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2818318B2 (en) * | 1991-04-23 | 1998-10-30 | 松下電工株式会社 | Method of forming conductive film on ceramic circuit board |
| JP2761118B2 (en) * | 1991-04-23 | 1998-06-04 | 松下電工株式会社 | Method of forming conductive film on ceramic circuit board |
| JP4903982B2 (en) * | 2003-12-04 | 2012-03-28 | 重弥 成塚 | Semiconductor device and manufacturing method thereof |
-
1981
- 1981-11-05 JP JP56177394A patent/JPS5878418A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7567078B2 (en) | 2004-12-28 | 2009-07-28 | Asahi Kasei Emd Corporation | Magnetic rotation-angle sensor and angle-information processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5878418A (en) | 1983-05-12 |
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