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JPH025013B2 - - Google Patents
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JPH025013B2 - - Google Patents

Info

Publication number
JPH025013B2
JPH025013B2 JP59155981A JP15598184A JPH025013B2 JP H025013 B2 JPH025013 B2 JP H025013B2 JP 59155981 A JP59155981 A JP 59155981A JP 15598184 A JP15598184 A JP 15598184A JP H025013 B2 JPH025013 B2 JP H025013B2
Authority
JP
Japan
Prior art keywords
needle
bonding
adhesive sheet
elastic pressing
pellet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59155981A
Other languages
Japanese (ja)
Other versions
JPS6063940A (en
Inventor
Takami Terajima
Shigeo Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP59155981A priority Critical patent/JPS6063940A/en
Publication of JPS6063940A publication Critical patent/JPS6063940A/en
Publication of JPH025013B2 publication Critical patent/JPH025013B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07302Connecting or disconnecting of die-attach connectors using an auxiliary member
    • H10W72/07304Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • H10W72/07331Connecting techniques
    • H10W72/07337Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/321Structures or relative sizes of die-attach connectors
    • H10W72/325Die-attach connectors having a filler embedded in a matrix
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders

Landscapes

  • Die Bonding (AREA)

Description

【発明の詳細な説明】 本発明は、接着シートから半導体ペレツトを剥
離してダイボンデイングする方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of peeling a semiconductor pellet from an adhesive sheet and die bonding the same.

トランジスタ、ダイオード、発光ダイオード、
IC等の半導体ペレツトの配列を得る方法の一つ
として、第1図に示す如くマスキングシートある
いはエレクトロンテープと呼ばれる接着シート1
に半導体ウエハ2を貼り付け、スクライブにより
切溝3を形成し、更にゴム製ローラで屈曲加圧す
ることにより切溝3に沿つて破断面4を形成して
個々の半導体ペレツト5とし、しかる後接着シー
トを適当な方法で四方に引き伸ばして第2図に示
す如く間隔を有した状態に半導体ペレツト5を分
離配列させる方法がある。このような方法で分離
された半導体ペレツトの基板への接着は、例え
ば、第3図に示す如く半導体ペレツトを装着する
支持基板6上に未硬化または半硬化のエポキシ樹
脂7を塗布しておき、こゝに接着シート1に貼り
付けられた半導体ペレツト5を対向させ、次に第
4図に示す如く押圧棒8で接着シート1の上から
半導体ペレツト5を押し下げ、基板6に半導体ペ
レツト5をエポキシ樹脂7で接着し、しかる後、
第5図に示す如く押圧棒8を接着シート1から離
らかすことによつて行う。ところで、この方法に
は、半導体ペレツト5が接着シート1から円滑に
剥離せず、しばしば接着シートに接着されたまま
持ち上げられるという欠点がある。
transistor, diode, light emitting diode,
As one method for obtaining the arrangement of semiconductor pellets such as ICs, an adhesive sheet 1 called a masking sheet or electron tape is used as shown in Figure 1.
A semiconductor wafer 2 is attached to the wafer, a cut groove 3 is formed by scribing, and a fractured surface 4 is formed along the cut groove 3 by bending and pressing with a rubber roller to form individual semiconductor pellets 5, which are then bonded. There is a method in which the sheet is stretched in all directions using an appropriate method and the semiconductor pellets 5 are separated and arranged at intervals as shown in FIG. The semiconductor pellets separated by such a method can be bonded to the substrate by, for example, coating an uncured or semi-cured epoxy resin 7 on the support substrate 6 on which the semiconductor pellets are mounted, as shown in FIG. Here, the semiconductor pellets 5 pasted on the adhesive sheet 1 are placed facing each other, and then, as shown in FIG. Glue with resin 7, then
This is done by separating the pressing rod 8 from the adhesive sheet 1 as shown in FIG. However, this method has the disadvantage that the semiconductor pellets 5 cannot be peeled off smoothly from the adhesive sheet 1 and are often lifted while being adhered to the adhesive sheet.

この種の欠点を解決するために、第6図に示す
ように先端を尖らした針8aを利用することがあ
る。このように尖つた針8aを使用すると確かに
接着シート1から半導体ペレツト5は円滑に剥離
する。しかし、針8aの先端がペレツト5の中心
を押圧しないと、ペレツト5が傾斜した状態とな
り、ペレツト5を所定箇所にボンデイングするこ
とが不可能になる。即ちボンデイングの位置ずれ
が生じる。
In order to solve this type of drawback, a needle 8a with a sharp tip may be used as shown in FIG. When the sharp needle 8a is used in this manner, the semiconductor pellet 5 is certainly peeled off smoothly from the adhesive sheet 1. However, if the tip of the needle 8a does not press the center of the pellet 5, the pellet 5 will be in an inclined state, making it impossible to bond the pellet 5 to a predetermined location. That is, a bonding positional shift occurs.

第7図は第6図の方法の欠点を解決するための
ボンデイング方法を示すものである。このボンデ
イング方法においては、先端の尖つた内針8aを
囲んで先端の平坦な外針8bが設けられているボ
ンデイング針装置が使用される。そして、第7図
Aのように接着シート1に接着する前には内針8
aは外針8bより突出していない。第7図Aの状
態を保つて針を下げると、第7図Bに示す如くペ
レツト5は実質的に外針8bにて導電接着剤7a
に導かれる。このため、第6図の単針に比較して
安定的にダイボンデイングすることができる。次
に第7図Cに示す如く外針8bのみを引き上げる
と、接着シート1は内針8aのみで押圧された状
態となり、接着シート1がペレツト5から剥離す
る。しかる後、第7図Dに示す如く内針8aも引
き上げると、ダイボンデイングが終了し、次のダ
イボンデイングが可能な状態となる。
FIG. 7 shows a bonding method for solving the drawbacks of the method shown in FIG. In this bonding method, a bonding needle device is used in which an outer needle 8b with a flat tip is provided surrounding an inner needle 8a with a sharp tip. As shown in FIG. 7A, the inner needle 8 is
a does not protrude beyond the outer needle 8b. When the needle is lowered while maintaining the state shown in FIG. 7A, the pellet 5 is substantially transferred to the conductive adhesive 7a by the outer needle 8b, as shown in FIG. 7B.
guided by. Therefore, die bonding can be performed more stably than with the single needle shown in FIG. Next, as shown in FIG. 7C, when only the outer needle 8b is pulled up, the adhesive sheet 1 is pressed only by the inner needle 8a, and the adhesive sheet 1 is peeled off from the pellet 5. Thereafter, as shown in FIG. 7D, when the inner needle 8a is also pulled up, die bonding is completed and the next die bonding becomes possible.

この第7図の方法によれば、確かにペレツトの
位置ずれを防ぐことができる。しかし、内針8a
と外針8bとをタイミングをとつて動かすことが
必要となり、装置の機構が複雑になる。
According to the method shown in FIG. 7, displacement of the pellets can certainly be prevented. However, the inner needle 8a
It is necessary to move the outer needle 8b and the outer needle 8b at appropriate timings, which complicates the mechanism of the device.

そこで、本発明の目的は、簡単な装置構成であ
るにも拘らず、安定的にダイボンデイングを行う
ことが可能なボンデイング方法を提供することに
ある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a bonding method that can perform die bonding stably despite having a simple device configuration.

上記目的を達成するための本発明は、実施例を
示す図面の符号を参照して説明すると、ボンデイ
ング針11と、このボンデイング針11を囲む弾
性押圧部12とから成り、前記弾性押圧部12の
一端が前記ボンデイング針11の上部に結合さ
れ、その他端17が遊端とされ、且つ通常は前記
ボンデイング針の先端13が前記弾性押圧部の他
端17よりも後退しているが、前記弾性押圧部1
2の長さが弾性変形して短くなることによつて前
記ボンデイング針の先端13が前記弾性押圧部の
他端17よりも突出するように形成されているボ
ンデイング針装置を用意し、且つ弾性的に伸張可
能な接着シート1に半導体ペレツト5の一方の主
面が接着されているものを用意し、且つ例えば実
施例の支持基板bのような支持基板上に接着剤7
aが塗布されたものを用意し、次に前記接着剤7
aに前記ペレツト5の他方の主面が対向するよう
に前記接着シート1を配置し、次に、前記接着シ
ート1に相対的に前記ボンデイング針装置を移動
することによつて前記弾性押圧部の他端17によ
り前記接着シート1を弾性的に伸張させつつ押圧
し、更に前記押圧を強めて、前記弾性押圧部12
の長さを弾性変形させて短くすることによつて前
記ボンデイング針の先端13を前記弾性押圧部の
他端17よりも突出させ、且つ前記ボンデイング
針の先端13による押圧で前記ペレツト5の他方
の主面を前記接着剤7aに押し当て、しかる後、
前記ボンデイング針装置を前記接着シート1から
離らかして前記接着シート1を前記押圧の前の配
置に復元させることにより、前記ペレツト5を前
記接着シート1から剥離させて前記接着剤7aに
より前記支持基体6上に接着することを特徴とす
る半導体ペレツトのダイボンデイング方法に係わ
るものである。
To achieve the above object, the present invention will be described with reference to the reference numerals in the drawings showing the embodiments. One end is connected to the upper part of the bonding needle 11, and the other end 17 is a free end, and normally the tip 13 of the bonding needle is set back from the other end 17 of the elastic pressing part. Part 1
A bonding needle device is provided in which the length of the bonding needle is elastically deformed and shortened so that the tip 13 of the bonding needle protrudes beyond the other end 17 of the elastic pressing part, and An adhesive sheet 1 is prepared in which one main surface of a semiconductor pellet 5 is bonded to a stretchable adhesive sheet 1, and an adhesive 7 is placed on a support substrate such as the support substrate b of the embodiment.
Prepare a material coated with a, and then apply the adhesive 7
The adhesive sheet 1 is arranged so that the other main surface of the pellet 5 faces the adhesive sheet 1, and then the bonding needle device is moved relative to the adhesive sheet 1, so that the elastic pressing portion is The adhesive sheet 1 is elastically stretched and pressed by the other end 17, and the pressure is further strengthened, so that the elastic pressing portion 12
By elastically deforming and shortening the length of the bonding needle, the tip 13 of the bonding needle is made to protrude beyond the other end 17 of the elastic pressing part, and the pressing by the tip 13 of the bonding needle causes the other end of the pellet 5 to be Press the main surface against the adhesive 7a, and then,
By separating the bonding needle device from the adhesive sheet 1 and restoring the adhesive sheet 1 to the position before the pressing, the pellet 5 is peeled from the adhesive sheet 1 and the adhesive 7a is applied to the adhesive sheet 1. The present invention relates to a die bonding method for semiconductor pellets, which is characterized in that the semiconductor pellets are bonded onto a support substrate 6.

本発明によれば、ボンデイング針12の下降と
上昇とを繰返すという単純な操作でダイボンデイ
ングが可能になる。即ち、弾性押圧部12による
接着シート1の押圧を強めて行く中で弾性押圧部
12の弾性変形が生じてボンデイング針の先端1
3が弾性押圧部12から突出してペレツト5を押
圧する動作が生じ、ダイボンデイングが達成され
る。また、ボンデイング針装置を接着シート1か
ら離らかすことによつてペレツト5が接着シート
1から剥離される。従つて、ダイボンデイングを
簡単な構成で極めて容易に達成することができ
る。
According to the present invention, die bonding can be performed by a simple operation of repeatedly lowering and raising the bonding needle 12. That is, as the pressure on the adhesive sheet 1 by the elastic pressure section 12 is increased, elastic deformation of the elastic pressure section 12 occurs, and the tip 1 of the bonding needle
3 protrudes from the elastic pressing portion 12 and presses the pellet 5, thereby achieving die bonding. Furthermore, by separating the bonding needle device from the adhesive sheet 1, the pellet 5 is peeled off from the adhesive sheet 1. Therefore, die bonding can be achieved extremely easily with a simple configuration.

以下、図面を参照して本発明の実施例について
述べる。
Embodiments of the present invention will be described below with reference to the drawings.

第8図及び第9図は本発明の実施例において使
用するボンデイング針装置10を示すものであ
る。このボンデイング針装置10はボンデイング
針11とこれを囲むコイルバネで構成された弾性
押圧部12とから成る。そしてボンデイング針1
1は、半導体ペレツトの背面を直接又はシートを
介して押圧するために先端13を尖らした小径部
14と、弾性押圧部12をガイドするための中径
部15と、弾性押圧部12の一端を結合するため
の大径部16とから成る。
8 and 9 show a bonding needle device 10 used in an embodiment of the present invention. This bonding needle device 10 consists of a bonding needle 11 and an elastic pressing portion 12 made of a coil spring surrounding the bonding needle 11. And bonding needle 1
1 has a small diameter part 14 with a sharpened tip 13 for pressing the back surface of the semiconductor pellet directly or through a sheet, a medium diameter part 15 for guiding the elastic pressing part 12, and one end of the elastic pressing part 12. and a large diameter portion 16 for coupling.

一方、弾性押圧部12は弾性的に圧縮可能なコ
イルバネの一端を大径部16と中径部15との境
界の段部に結合させ、他端即ち下端17を遊端と
した構成であり、コイルバネを圧縮しない状態で
は下端17が針11の先端よりも突出し、コイル
バネを圧縮すれば、この下端17が針の先端13
よりも上に変位することが可能なものである。尚
弾性押圧部12の下端17の径は、ボンデイング
する半導体ペレツトと略同じ大きさに形成されて
いる。
On the other hand, the elastic pressing part 12 has a structure in which one end of an elastically compressible coil spring is connected to a step at the boundary between the large diameter part 16 and the medium diameter part 15, and the other end, that is, the lower end 17, is a free end. When the coil spring is not compressed, the lower end 17 protrudes beyond the tip of the needle 11, and when the coil spring is compressed, the lower end 17 protrudes beyond the tip 13 of the needle.
It is possible to move above the The diameter of the lower end 17 of the elastic pressing portion 12 is formed to be approximately the same size as the semiconductor pellet to be bonded.

第10図は第8図及び第9図に示すボンデイン
グ針装置10を使用してペレツトをボンデイング
する方法を示す。この方法に於いては、まず第1
0図Aに示す接着シート1に半導体ペレツト5が
接着されているものを用意する。これは第1図及
び第2図で説明した方法と同様な方法で形成する
ことが出来る。接着シート1には透明で片面接着
性の塩化ビニール樹脂薄膜例えばツカサ商会から
販売されているマスキングシートあるいはエレク
トロンテープ(商品名)と呼ばれるものが適す
る。第10図Aに示す如くAgペーストからなる
導電性接着剤7aとペレツト5との位置合せが終
了したら、ボンデイング針11を下降させる。針
11を下降させると、この針11に弾性押圧部1
2が一体に結合されているので、弾性押圧部12
も下降し、針の先端13よりも先に弾性押圧部1
2の下端17がシート1に接触し、シート1を押
圧する。更に針11を下降させると、弾性押圧部
12は弾性変形しつつ一層強くシート1を押圧
し、シート1が弾性的に伸張し、第10図Bに示
す如くペレツト5は接着剤7aに徐々に近づく。
更に針11を下降させると、第10図Cに示す如
くついにペレツト5は基板6に接着剤7aで接着
され、針11がシート1を介してペレツト5の背
面を押圧する。この状態においては、針11の先
端13が弾性押圧部12の下端17よりも突出す
るので、ペレツト5からシート1が容易に剥離さ
れる。しかる後、針11を上昇させると、これと
共に弾性押圧部12も上昇し、第10図Dに示す
如く元の状態に戻る。
FIG. 10 shows a method of bonding pellets using the bonding needle apparatus 10 shown in FIGS. 8 and 9. FIG. In this method, first
An adhesive sheet 1 shown in FIG. 0A on which semiconductor pellets 5 are adhered is prepared. This can be formed by a method similar to that described in FIGS. 1 and 2. As the adhesive sheet 1, a transparent, single-sided adhesive vinyl chloride resin thin film, such as a masking sheet sold by Tsukasa Shokai Co., Ltd., or one called Electron Tape (trade name) is suitable. As shown in FIG. 10A, when the conductive adhesive 7a made of Ag paste and the pellet 5 are aligned, the bonding needle 11 is lowered. When the needle 11 is lowered, the elastic pressing part 1 is applied to this needle 11.
2 are integrally connected, the elastic pressing portion 12
also descends, and the elastic pressing part 1 is placed before the tip 13 of the needle.
The lower end 17 of 2 contacts the sheet 1 and presses the sheet 1. When the needle 11 is further lowered, the elastic pressing part 12 deforms elastically and presses the sheet 1 even more strongly, the sheet 1 is elastically expanded, and the pellet 5 is gradually attached to the adhesive 7a as shown in FIG. 10B. Get closer.
When the needle 11 is further lowered, the pellet 5 is finally adhered to the substrate 6 with the adhesive 7a, as shown in FIG. 10C, and the needle 11 presses the back surface of the pellet 5 through the sheet 1. In this state, the tip 13 of the needle 11 protrudes beyond the lower end 17 of the elastic pressing section 12, so that the sheet 1 is easily peeled off from the pellet 5. Thereafter, when the needle 11 is raised, the elastic pressing portion 12 is also raised, returning to its original state as shown in FIG. 10D.

上述の如く、このボンデイング針装置を使用す
れば、針11を下降させ、しかる後、上昇させる
という動作のみで、ダイボンデイングが可能にな
る。そして、細い針の先端13のみでペレツトを
押圧せずに、ペレツトの大きさに略等しい径を有
する弾性押圧部12にてペレツト5の所定位置又
はこの近傍まで押し下げるので、位置ずれの少な
い状態にダイボンデイングすることが可能であ
る。また針11を囲むようにコイルバネを装着す
るのみでよいので、装置の簡略化が可能である。
As described above, if this bonding needle device is used, die bonding can be performed simply by lowering the needle 11 and then raising it. Then, instead of pressing the pellet only with the tip 13 of the thin needle, the elastic pressing part 12 having a diameter approximately equal to the size of the pellet presses down the pellet 5 to a predetermined position or the vicinity thereof, so that positional displacement is minimized. It is possible to perform die bonding. Further, since it is only necessary to attach a coil spring so as to surround the needle 11, the apparatus can be simplified.

第11図は本発明に係わる別の方法を示す。こ
の方法ではボンデイング針の先端13が接着シー
ト1を貫通するように押圧されている。このよう
にしても第10図の方法と同様な作用効果を得る
ことができる。
FIG. 11 shows another method according to the invention. In this method, the tip 13 of the bonding needle is pressed so as to penetrate the adhesive sheet 1. Even in this case, the same effect as the method shown in FIG. 10 can be obtained.

以上本発明の実施例について述べたが、本発明
はこの実施例に限定されるものではなく、更に変
形可能なものである。例えば、第12図に示す如
く、コイルバネの代りにゴムのような弾性円筒体
20とこの先端に結合した押圧リング21とによ
つて弾性押圧部12を構成してもよい。また第8
図におけるコイルバネの先端に第12図に示すよ
うな押圧リング21を結合させてもよい。またバ
ネ板によつて弾性を得てもよい。また実施例では
弾性押圧部12の下端17がリング状となつてい
るが、四角形としてもよいし、また針先端13の
両側のみを押圧するようにしてもよい。また接着
シート1に対するペレツト5の接着は接着剤によ
る接着に限ることなく、静電的接着又はその他の
接着であつてもよい。
Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments and can be further modified. For example, as shown in FIG. 12, instead of a coil spring, the elastic pressing portion 12 may be constructed of an elastic cylindrical body 20 such as rubber and a pressing ring 21 coupled to the tip thereof. Also the 8th
A pressing ring 21 as shown in FIG. 12 may be coupled to the tip of the coil spring in the figure. Further, elasticity may be obtained by a spring plate. Further, in the embodiment, the lower end 17 of the elastic pressing portion 12 is ring-shaped, but it may be square-shaped, or it may be configured to press only both sides of the needle tip 13. Further, the adhesion of the pellets 5 to the adhesive sheet 1 is not limited to adhesion using an adhesive, and may be electrostatic adhesion or other adhesion.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は半導体ウエハを半導体ペレツトに分割
した状態を示す正面図、第2図は第1図の接着シ
ートを伸張した状態を示す説明的正面図、第3
図、第4図、及び第5図は従来の半導体ペレツト
装着法を工程順に示す正面図、第6図は従来の単
針によるボンデイング法を示す正面図、第7図は
従来の二重針によるボンデイング法を工程順に示
す一部縦断正面図、第8図は本発明の1実施例に
係わるボンデイング針装置の斜視図、第9図は第
8図の針装置の説明的断面図、第10図は第8図
のボンデイング針装置を利用してダイボンデイン
グする方法を順次に説明的に示す一部縦断正面
図、第11図は第8図のボンデイング針装置を利
用してダイボンデイングする別の方法を示す一部
縦断正面図、第12図はボンデイング針装置の変
形例を示す断面図である。 尚図面に用いられている符号において、1は接
着シート、5はペレツト、7aは導電性接着剤、
10はボンデイング針装置、11はボンデイング
針、12は弾性押圧部、13は先端、17は下端
である。
FIG. 1 is a front view showing a state in which a semiconductor wafer is divided into semiconductor pellets, FIG. 2 is an explanatory front view showing a state in which the adhesive sheet of FIG. 1 is stretched, and FIG.
Figures 4 and 5 are front views showing the conventional semiconductor pellet mounting method in the order of steps, Figure 6 is a front view showing the conventional single needle bonding method, and Figure 7 is the conventional double needle bonding method. FIG. 8 is a perspective view of a bonding needle device according to an embodiment of the present invention; FIG. 9 is an explanatory sectional view of the needle device shown in FIG. 8; FIG. 8 is a partial longitudinal sectional front view sequentially illustrating a die bonding method using the bonding needle device shown in FIG. 8, and FIG. 11 is another method for die bonding using the bonding needle device shown in FIG. 8. FIG. 12 is a partially longitudinal front view showing a modification of the bonding needle device. In addition, in the symbols used in the drawings, 1 is an adhesive sheet, 5 is a pellet, 7a is a conductive adhesive,
10 is a bonding needle device, 11 is a bonding needle, 12 is an elastic pressing portion, 13 is a tip, and 17 is a lower end.

Claims (1)

【特許請求の範囲】 1 ボンデイング針11と、このボンデイング針
11を囲む弾性押圧部12とから成り、前記弾性
押圧部12の一端が前記ボンデイング針11の上
部に結合され、その他端17が遊端とされ、且つ
通常は前記ボンデイング針の先端13が前記弾性
押圧部の他端17よりも後退しているが、前記弾
性押圧部12の長さが弾性変形して短くなること
によつて前記ボンデイング針の先端13が前記弾
性押圧部の他端17よりも突出するように形成さ
れているボンデイング針装置を用意し、且つ弾性
的に伸張可能な接着シート1に半導体ペレツト5
の一方の主面が接着されているものを用意し、且
つ支持基体上に接着剤7aが塗布されたものを用
意し、 次に、前記接着剤7aに前記ペレツト5の他方
の主面が対向するように前記接着シート1を配置
し、 次に、前記接着シート1に相対的に前記ボンデ
イング針装置を移動することによつて前記弾性押
圧部の他端17により前記接着シート1を弾性的
に伸張させつつ押圧し、更に前記押圧を強めて、
前記弾性押圧部12の長さを弾性変形させて短く
することによつて前記ボンデイング針の先端13
を前記弾性押圧部の他端17よりも突出させ、且
つ前記ボンデイング針の先端13による押圧で前
記ペレツト5を他方の主面を前記接着剤7aに押
し当て、 しかる後、前記ボンデイング針装置を前記接着
シート1から離らかして前記接着シート1を前記
押圧の前の配置に復元させることにより、前記ペ
レツト5を前記接着シート1から剥離させて前記
接着剤7aにより前記支持基体6上に接着するこ
とを特徴とする半導体ペレツトのダイボンデイン
グ方法。
[Scope of Claims] 1. Consists of a bonding needle 11 and an elastic pressing part 12 surrounding the bonding needle 11, one end of the elastic pressing part 12 being connected to the upper part of the bonding needle 11, and the other end 17 being a free end. Usually, the tip 13 of the bonding needle is set back from the other end 17 of the elastic pressing section, but as the length of the elastic pressing section 12 is elastically deformed and shortened, the bonding needle is A bonding needle device is prepared in which the tip 13 of the needle is formed to protrude beyond the other end 17 of the elastic pressing portion, and a semiconductor pellet 5 is placed on an elastically stretchable adhesive sheet 1.
One main surface of the pellet 5 is bonded, and an adhesive 7a is coated on the supporting base. Next, the other main surface of the pellet 5 is placed opposite to the adhesive 7a. Next, by moving the bonding needle device relative to the adhesive sheet 1, the other end 17 of the elastic pressing portion elastically presses the adhesive sheet 1. Press while stretching, and further strengthen the pressure,
By elastically deforming and shortening the length of the elastic pressing portion 12, the tip 13 of the bonding needle is
is made to protrude beyond the other end 17 of the elastic pressing part, and the other main surface of the pellet 5 is pressed against the adhesive 7a by pressure from the tip 13 of the bonding needle, and then the bonding needle device is By separating the adhesive sheet 1 from the adhesive sheet 1 and restoring the adhesive sheet 1 to the position before the pressing, the pellet 5 is peeled off from the adhesive sheet 1 and adhered onto the support base 6 by the adhesive 7a. A method for die bonding semiconductor pellets, characterized by:
JP59155981A 1984-07-26 1984-07-26 Method of die bonding semiconductor pellet Granted JPS6063940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59155981A JPS6063940A (en) 1984-07-26 1984-07-26 Method of die bonding semiconductor pellet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59155981A JPS6063940A (en) 1984-07-26 1984-07-26 Method of die bonding semiconductor pellet

Publications (2)

Publication Number Publication Date
JPS6063940A JPS6063940A (en) 1985-04-12
JPH025013B2 true JPH025013B2 (en) 1990-01-31

Family

ID=15617744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59155981A Granted JPS6063940A (en) 1984-07-26 1984-07-26 Method of die bonding semiconductor pellet

Country Status (1)

Country Link
JP (1) JPS6063940A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2877142B1 (en) * 2004-10-21 2007-05-11 Commissariat Energie Atomique METHOD OF TRANSFERRING AT LEAST ONE MICROMETRIC OR MILLIMETRIC SIZE OBJECT USING A POLYMER HANDLE
SG11201806151UA (en) * 2016-06-22 2019-01-30 Suzuki Co Ltd Mounting method, mounting head and mounting apparatus

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4979684A (en) * 1972-12-07 1974-08-01

Also Published As

Publication number Publication date
JPS6063940A (en) 1985-04-12

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