JPH0254656B2 - - Google Patents
Info
- Publication number
- JPH0254656B2 JPH0254656B2 JP59141814A JP14181484A JPH0254656B2 JP H0254656 B2 JPH0254656 B2 JP H0254656B2 JP 59141814 A JP59141814 A JP 59141814A JP 14181484 A JP14181484 A JP 14181484A JP H0254656 B2 JPH0254656 B2 JP H0254656B2
- Authority
- JP
- Japan
- Prior art keywords
- hot plate
- resist
- baking
- substrate
- clean room
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置等の製造工程において、プ
レート・ウエハー等の基板に塗布されたレジスト
等の被膜をベーク処理する装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an apparatus for baking a film such as a resist applied to a substrate such as a plate or wafer in the manufacturing process of semiconductor devices and the like.
半導体装置を製造するためには微細なパターン
を所定の位置に正確に形成する必要があり、この
様なパターンは一般にフオトリソグラフイによつ
て形成される。 In order to manufacture semiconductor devices, it is necessary to accurately form fine patterns at predetermined positions, and such patterns are generally formed by photolithography.
フオトリソグラフイは通常、以下の方法で行な
われる。 Photolithography is typically performed in the following manner.
パターンの形成すべきフオトマスク用のメタル
プレートやシリコンウエハー等の基板上に感光性
のフオトレジストを塗布し、ベーク後このフオト
レジストを紫外線にて露光する。次に上記フオト
レジストを現像すると、基板上にレジストパター
ンが形成されて所望部分の基板が露出するので、
この部分をエツチングして所望のパターンを形成
するのである。 A photosensitive photoresist is applied onto a substrate such as a metal plate for a photomask or a silicon wafer on which a pattern is to be formed, and after baking, the photoresist is exposed to ultraviolet light. Next, when the photoresist is developed, a resist pattern is formed on the substrate and the desired portion of the substrate is exposed.
This portion is then etched to form the desired pattern.
このフオトリソグラフイにおいて、ベーク処理
はフオトレジストと基板の密着性を向上させフオ
トレジスト中に含まれる溶剤、例えばエチル・セ
ロソルプ・アセテートやキシレン等を蒸発させる
目的で行なう。 In this photolithography, the baking process is performed for the purpose of improving the adhesion between the photoresist and the substrate and evaporating solvents contained in the photoresist, such as ethyl cellosolve acetate and xylene.
上記ベーク処理のためのベーク装置としては、
温風を循環させるオーブンや赤外線を利用した装
置が一般的であつたが、ベーク時間が長いことや
基板上のレジストに対する温度均一性が十分でな
いこと等の欠点を有していた。このため、短時間
でベークでき温度均一性のよいベーク装置として
ホツトプレートによる方法が実用化されつつあ
る。 As a baking device for the above baking process,
Ovens that circulate warm air and devices that utilize infrared rays have been common, but they have drawbacks such as long baking times and insufficient temperature uniformity for the resist on the substrate. For this reason, a method using a hot plate is being put into practical use as a baking device that can bake in a short time and has good temperature uniformity.
この方法は第1図に示す様にヒーター14で熱
せられたガラスや金属のプレート11上にレジス
ト12を塗布した基板13を載せて処理するため
ベーク時間が短かくてよく、また枚葉式であるた
め基板間の熱覆歴や基板内の温度均一性に優れて
いる。 As shown in FIG. 1, this method requires a short baking time because the substrate 13 coated with the resist 12 is placed on a glass or metal plate 11 heated by a heater 14, and is a single-wafer process. Therefore, it has excellent heat coverage between substrates and temperature uniformity within the substrate.
しかしながらクリーンルーム内にホツトプレー
トを設置するとホツトプレートから発する熱がク
リーンルーム内の温度バランスに影響を及ぼした
り、基板上のレジスト中に含まれている有機溶剤
が蒸発してクリーンルーム内の雰囲気を汚染す
る。 However, when a hot plate is installed in a clean room, the heat generated from the hot plate affects the temperature balance in the clean room, and the organic solvent contained in the resist on the substrate evaporates, polluting the atmosphere in the clean room.
また、ホツトプレート全体をカバーで覆うとカ
バー内の清浄性が悪くなり、さらに熱がこもつて
温度分布が不均一になつてホツトプレートベーク
の長所が十分発輝できなくなるという不都合があ
つた。 Furthermore, when the entire hot plate is covered with a cover, the cleanliness inside the cover becomes poor, and furthermore, heat is trapped and the temperature distribution becomes uneven, making it impossible for the advantages of hot plate baking to fully shine.
本発明は上記のレジストのベークを行なうホツ
トプレート方式においてクリーンルーム内に悪影
響を及ぼさず、十分その性能を発輝できる様に改
良した装置である。 The present invention is an improved apparatus for the above-mentioned hot plate method for baking the resist so that its performance can be fully demonstrated without adversely affecting the inside of the clean room.
すなわち本発明の特徴は、表面にレジストを塗
布した基板をベークするホツトプレート式ベーク
装置において、前記ホツトプレートの全体をカバ
ーで覆うことなく該ホツトプレートの両側に、排
気孔を有し該ホツトプレートと反対側でダクトに
接続される中空の箱から側壁を具備し、該排気孔
から該ホツトプレート側の有機溶剤を含む空気を
排気するようにしたレジストベーク装置にある。 That is, a feature of the present invention is that, in a hot plate type baking apparatus for baking a substrate whose surface is coated with resist, exhaust holes are provided on both sides of the hot plate without covering the entire hot plate with a cover. The resist baking apparatus is provided with a side wall from a hollow box connected to a duct on the opposite side thereof, and is configured to exhaust air containing an organic solvent from the hot plate side through the exhaust hole.
以下、図面を参照して本発明を詳細に説明す
る。 Hereinafter, the present invention will be explained in detail with reference to the drawings.
第2図は本発明の実施例を示す要部断面図であ
る。図において、ヒーター24を有するホツトプ
レート21の両側にホツトプレート上面より20〜
50cm高い側壁25をつくる。この側壁はホツトプ
レート側に排気孔26があいた、例えば透明塩ビ
製の中空の箱でホツトプレートと反対側の一部か
らダクト27によりクリンルームの外へ排気す
る。レジスト22が塗布された基板23をホツト
プレートに載せるとレジスト中の有機溶剤が蒸発
するが排気孔から排気されてクリーンルームを汚
染することはない。本方法ではホツトプレート全
体を覆つた場合とは異なりホツトプレートの熱が
こもつて基板のベーク条件が不均一になることも
なく、不要な熱はクリーンルームに影響を及ぼさ
ずにクリーンルームの外へ導かれる。 FIG. 2 is a sectional view of a main part showing an embodiment of the present invention. In the figure, from the top surface of the hot plate 21 on both sides of the hot plate 21 having the heater 24,
Create a side wall 25 that is 50 cm higher. This side wall is a hollow box made of, for example, transparent PVC, with an exhaust hole 26 on the side of the hot plate, and the air is exhausted to the outside of the clean room through a duct 27 from a part on the side opposite to the hot plate. When the substrate 23 coated with the resist 22 is placed on a hot plate, the organic solvent in the resist evaporates, but is not exhausted from the exhaust hole and contaminates the clean room. Unlike the case where the entire hot plate is covered, this method does not trap the heat of the hot plate and make the baking conditions of the board uneven, and unnecessary heat is conducted outside the clean room without affecting the clean room. It will be destroyed.
また、ホツトプレートの上方が開放されている
ためダストを巻き込んでレジスト表面を汚染する
ことがなく、上方からメンテナンスも行ない易
い。 Furthermore, since the upper part of the hot plate is open, there is no possibility of dust being drawn in and contaminating the resist surface, and maintenance can be easily performed from above.
以上説明した本発明によれば、ホツトプレート
の数が多くなつた発熱量の大きい多段式のベーク
装置によつて多数の基板を処理する場合でもベー
クを安全にかつ精度良く行なえる。 According to the present invention as described above, even when a large number of substrates are processed using a multi-stage baking device having a large number of hot plates and generating a large amount of heat, baking can be performed safely and accurately.
第1図は従来のホツトプレートの断面図、第2
図は本発明の一実施例の断面図である。
21……ホツトプレート、22……レジスト、
23……基板、24……ヒーター、25……側
壁、26……孔、27……ダクト。
Figure 1 is a sectional view of a conventional hot plate, Figure 2 is a cross-sectional view of a conventional hot plate.
The figure is a sectional view of one embodiment of the present invention. 21...hot plate, 22...resist,
23... Board, 24... Heater, 25... Side wall, 26... Hole, 27... Duct.
Claims (1)
ホツトプレート式ベーク装置において、前記ホツ
トプレートの全体をカバーで覆うことなく該ホツ
トプレートの両側に、排気孔を有し該ホツトプレ
ートと反対側でダクトに接続される中空の箱から
なる側壁を具備し、該排気孔から該ホツトプレー
ト側の有機溶剤を含む空気を排気するようにした
ことを特徴とするレジストベーク装置。1. In a hot plate type baking device that bakes a substrate whose surface has been coated with resist, the hot plate is not entirely covered with a cover, but has exhaust holes on both sides of the hot plate and a duct on the opposite side of the hot plate. 1. A resist baking apparatus, comprising a side wall formed of a connected hollow box, and air containing an organic solvent on the hot plate side is exhausted from the exhaust hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59141814A JPS6120331A (en) | 1984-07-09 | 1984-07-09 | Device for baking resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59141814A JPS6120331A (en) | 1984-07-09 | 1984-07-09 | Device for baking resist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6120331A JPS6120331A (en) | 1986-01-29 |
| JPH0254656B2 true JPH0254656B2 (en) | 1990-11-22 |
Family
ID=15300746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59141814A Granted JPS6120331A (en) | 1984-07-09 | 1984-07-09 | Device for baking resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6120331A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06103665B2 (en) * | 1987-01-29 | 1994-12-14 | 東京エレクトロン株式会社 | Processor |
| JPH0427113A (en) * | 1990-04-23 | 1992-01-30 | Tadahiro Omi | Resist treatment device, resist treatment method, and resist pattern |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5633654Y2 (en) * | 1972-11-09 | 1981-08-10 | ||
| JPS567744B2 (en) * | 1973-08-06 | 1981-02-19 | ||
| JPS5735319A (en) * | 1980-08-13 | 1982-02-25 | Hitachi Ltd | Heat treatment device |
| JPS58206123A (en) * | 1982-05-25 | 1983-12-01 | Toshiba Corp | Manufacturing device for semiconductor |
| JPS58196837U (en) * | 1982-06-24 | 1983-12-27 | 大日本スクリ−ン製造株式会社 | Semiconductor wafer drying equipment |
-
1984
- 1984-07-09 JP JP59141814A patent/JPS6120331A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6120331A (en) | 1986-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3983831B2 (en) | Substrate baking apparatus and substrate baking method | |
| KR100601979B1 (en) | Semiconductor Wafer Baking Apparatus | |
| JPH08227161A (en) | Patterning method and resist curing method | |
| JP2011099956A (en) | Method and apparatus for baking resist | |
| CN101976646A (en) | Substrate processing method, program, computer-readable recording medium, and substrate processing system | |
| US5849582A (en) | Baking of photoresist on wafers | |
| US20020076660A1 (en) | Method of forming wiring pattern | |
| JPH0254656B2 (en) | ||
| KR200243530Y1 (en) | Bake apparatus for semiconductive wafer | |
| JP4294893B2 (en) | Substrate heat treatment apparatus, rectifying mechanism thereof, and rectifying method | |
| JP2564288B2 (en) | Baking device | |
| JPH03154324A (en) | Device and method for pattern exposure | |
| JP2784452B2 (en) | Substrate heating apparatus, resist processing apparatus and resist processing method | |
| JPH0130138B2 (en) | ||
| JPS6113373B2 (en) | ||
| JPH06310416A (en) | Method and equipment for baking semiconductor wafer | |
| US4588379A (en) | Configuration for temperature treatment of substrates, in particular semi-conductor crystal wafers | |
| JP3623369B2 (en) | Semiconductor manufacturing equipment | |
| JPH0637006A (en) | Semiconductor processing equipment | |
| KR930010979B1 (en) | Apparatus for baking photoresist | |
| JP2002064053A (en) | Heat treatment method and heat treatment apparatus for substrate after resist coating | |
| JP2000058430A (en) | Semiconductor manufacturing equipment | |
| JPH11135399A (en) | X-ray mask manufacturing method and apparatus | |
| JPH0689856A (en) | Photoresist pattern forming method | |
| KR19980015766A (en) | Baking ovens for semiconductor device manufacturing |