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JPH0260065B2 - - Google Patents
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JPH0260065B2 - - Google Patents

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Publication number
JPH0260065B2
JPH0260065B2 JP18121185A JP18121185A JPH0260065B2 JP H0260065 B2 JPH0260065 B2 JP H0260065B2 JP 18121185 A JP18121185 A JP 18121185A JP 18121185 A JP18121185 A JP 18121185A JP H0260065 B2 JPH0260065 B2 JP H0260065B2
Authority
JP
Japan
Prior art keywords
substrate
quartz
jig
holding
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP18121185A
Other languages
Japanese (ja)
Other versions
JPS6242428A (en
Inventor
Michiharu Ito
Koji Hirota
Mitsuo Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18121185A priority Critical patent/JPS6242428A/en
Publication of JPS6242428A publication Critical patent/JPS6242428A/en
Publication of JPH0260065B2 publication Critical patent/JPH0260065B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Description

【発明の詳細な説明】 〔概要〕 石英アンプル内に基板とメルト素材を入れ、石
英アンプルの回転により基板とメルトの接触、あ
るいは分離により基板上にエピタキシヤル成長を
行う閉管式チツピング(Tipping)成長装置にお
いて、基板の固定治具を、これを保持する保持治
具に挿入して保持するときに石英どうしのスリ合
わせにより生ずる石英破片の影響を除去した構造
を有する結晶成長装置を提案する。
[Detailed Description of the Invention] [Summary] Closed-tube tipping in which a substrate and melt material are placed in a quartz ampoule, and epitaxial growth is performed on the substrate by bringing the substrate and melt into contact or separating them by rotating the quartz ampoule. We propose a crystal growth apparatus having a structure that eliminates the influence of quartz fragments caused by quartz pieces scraping together when a substrate fixing jig is inserted into a holding jig that holds the substrate.

〔産業上の利用分野〕[Industrial application field]

本発明は基板を石英治具に装填する際に生ずる
石英破片の影響を除去した構造の閉管式チツピン
グ結晶成長装置に関する。
The present invention relates to a closed-tube type chipping crystal growth apparatus having a structure that eliminates the influence of quartz fragments generated when a substrate is loaded into a quartz jig.

カドミウムテルル(CdTe)基板上に、水銀カ
ドミウムテルル(HgCdTe)結晶を液相エピタキ
シヤル成長する場合、HgCdTeのメルトは水銀
(Hg)の蒸気圧が高いため、石英アンプルを用い
て閉管系で行つている。
When liquid-phase epitaxial growth of mercury cadmium tellurium (HgCdTe) crystals is performed on a cadmium tellurium (CdTe) substrate, the HgCdTe melt is grown in a closed tube system using a quartz ampoule because the vapor pressure of mercury (Hg) is high. There is.

この場合、CdTe基板を石英治具に装填する際
に石英片がCdTe基板表面に付着し、結晶欠陥発
生の原因となつている。
In this case, when loading the CdTe substrate into a quartz jig, quartz pieces adhere to the surface of the CdTe substrate, causing crystal defects.

石英片は石英治具のスリ合わせ部で発生するた
め、基板装填時に、この部分の影響が直接基板に
およばない構造が望まれている。
Since quartz pieces are generated at the slit joint of the quartz jig, it is desirable to have a structure in which the influence of this part does not directly affect the substrate when loading the substrate.

〔従来の技術〕[Conventional technology]

第2図1〜3は従来例による閉管式チツピング
結晶成長装置を説明する斜視図である。
2 are perspective views illustrating a conventional closed-tube type chipping crystal growth apparatus.

第2図1,2は成長治具で、それぞれ保持治具
21(部材21A,21B,21Cとよりなる)
と基板固定治具22を、第2図3はこれらの成長
治具を石英アンプール23に装填した結晶成長装
置全体を示している。
Figures 2 1 and 2 show growth jigs, each holding jig 21 (consisting of members 21A, 21B, and 21C).
FIG. 2 and FIG. 3 show the entire crystal growth apparatus in which these growth jigs are loaded into a quartz ampool 23.

第2図1において、石英よりなる保持治具21
の基板保持部21Aと21Bとは、第2図2に示
される基板固定治具22を支持するようにB部に
溝が切られている。
In FIG. 2 1, a holding jig 21 made of quartz
The substrate holding parts 21A and 21B have a groove cut in the B part so as to support the substrate fixing jig 22 shown in FIG.

第2図2において、石英よりなる基板固定治具
22は、基板としてのCdTe基板26を取り付け
固定する。
In FIG. 2, a substrate fixing jig 22 made of quartz attaches and fixes a CdTe substrate 26 as a substrate.

第2図3において、結晶基板26を取り付けた
上記成長治具と、スペーサの役目をする石英内管
24と、メルト25とを石英アンプール23に封
入し、横型の均熱炉に挿入する。
In FIG. 2, the growth jig to which the crystal substrate 26 is attached, the quartz inner tube 24 serving as a spacer, and the melt 25 are sealed in a quartz ampool 23 and inserted into a horizontal soaking furnace.

27は炉のヒータである。 27 is a heater for the furnace.

以上の構造の結晶成長装置においては、石英ど
うしがスリ合う個所は、基板保持部21Aと21
Bが石英アンプール23に嵌合するA部と、基板
固定治具22を基板保持部21Aと21Bに挿入
するB部である。
In the crystal growth apparatus having the above structure, the parts where the quartz pieces rub against each other are the substrate holding parts 21A and 21.
B is part A that fits into the quartz ampool 23, and part B that inserts the substrate fixing jig 22 into the substrate holding parts 21A and 21B.

この方法において、保持治具21の外径を石英
アンプール23の内径に合わせ、かつ注意して治
具を装填してA部における石英片の発生を抑制し
ても、B部において石英片を発生し、結晶基板表
面に付着する。
In this method, even if the outer diameter of the holding jig 21 is adjusted to the inner diameter of the quartz ampule 23 and the jig is carefully loaded to suppress the generation of quartz pieces in the A part, quartz pieces still occur in the B part. and adheres to the surface of the crystal substrate.

また、成長治具は通常鏡面に仕上げ、面とりを
行つて欠けを生じないように留意しているが、成
長ごとに弗酸で清浄化するため、石英表面が腐食
されて欠けやすくなり、結晶片が発生しやすくな
る。
In addition, growth jigs are usually finished with a mirror finish and chamfered to prevent chips from occurring, but since each growth jig is cleaned with hydrofluoric acid, the quartz surface corrodes and becomes prone to chipping. Pieces are more likely to form.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来例による結晶成長装置においては基板固定
治具を保持治具に装填する際、石英片が基板上に
付着し、この部分が未成長等の結晶欠陥が発生
し、成長結晶の表面が凹凸になる。
In conventional crystal growth equipment, when loading the substrate fixing jig into the holding jig, quartz pieces adhere to the substrate, causing crystal defects such as non-growth in this area, and the surface of the growing crystal becomes uneven. Become.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点の解決は、石英アンプル3内に嵌合
する2個の円筒形の基板保持部1A,1Bと、両
者を接続し、かつメルト素材を保持するメルト保
持部1Cとよりなる保持治具1と、 表面に結晶を成長しようとする基板6を取り付
け、かつ該基板保持部1Aと1B間に保持される
基板固定治具2とを有し、 該基板保持部1A、および1Bがそれぞれ2分
割された部材1A−1,1A−2、および1B−
1,1B−2よりなり、各部材間に該基板固定治
具2を挟みこんで固定するようにした本発明によ
る結晶成長装置により達成される。
The solution to the above problem is to use a holding jig consisting of two cylindrical substrate holding parts 1A and 1B that fit into the quartz ampoule 3, and a melt holding part 1C that connects the two and holds the melt material. 1, and a substrate fixing jig 2 to which a substrate 6 on which a crystal is to be grown is attached and held between the substrate holders 1A and 1B, each of the substrate holders 1A and 1B having 2 Divided members 1A-1, 1A-2, and 1B-
1, 1B-2, and the substrate fixing jig 2 is sandwiched and fixed between each member. This is achieved by the crystal growth apparatus according to the present invention.

〔作用〕[Effect]

石英は欠けやすい材料であるが、閉管式エピタ
キシヤル成長治具の材質として純度の面から最適
である。従つて欠けやすい欠点は治具の構造で解
消する必要がある。
Although quartz is a material that is prone to chipping, it is the most suitable material for closed-tube epitaxial growth jigs in terms of purity. Therefore, it is necessary to solve the problem of easy chipping by changing the structure of the jig.

本発明の装置においては、基板固定治具を保持
治具に挿入する際、石英どうしが擦れ合うことの
ないように、保持治具を2分割して挟みこんで固
定するようにしたものである。
In the apparatus of the present invention, when inserting the substrate fixing jig into the holding jig, the holding jig is divided into two parts and fixed by sandwiching them in two to prevent the quartz pieces from rubbing against each other.

2分割した保持治具の固定は、基板固定治具を
固定した状態で、内径が保持治具の外径に合つた
石英アンプルに入れるため問題はない。
There is no problem in fixing the holding jig divided into two parts because, with the substrate fixing jig fixed, it is placed in a quartz ampoule whose inner diameter matches the outer diameter of the holding jig.

以上のようにして、基板上に石英片が付着する
ことを防止するものである。
As described above, quartz pieces are prevented from adhering to the substrate.

〔実施例〕〔Example〕

第1図1,2は本発明による閉管式チツピング
結晶成長装置を説明する斜視図である。
1 and 2 are perspective views illustrating a closed tube type chipping crystal growth apparatus according to the present invention.

第1図1は成長治具で、それぞれ保持治具1と
基板固定治具2を、第1図2はこれらの成長治具
を石英アンプール3に装填した結晶成長装置全体
を示す。
FIG. 1 shows growth jigs, including a holding jig 1 and a substrate fixing jig 2, respectively, and FIG. 1 2 shows the entire crystal growth apparatus in which these growth jigs are loaded into a quartz ampool 3.

第1図1において、石英よりなる保持治具1
は、石英よりなる基板固定治具2を保持する基板
保持部1A、および1Bと、メルト素材を保持す
るメルト保持部1Cとよりなる。基板保持部1
A、および1Bはそれぞれ部材1A−1,1A−
2、および1B−1,1B−2に2分割される。
In FIG. 1, a holding jig 1 made of quartz
consists of substrate holding parts 1A and 1B that hold a substrate fixing jig 2 made of quartz, and a melt holding part 1C that holds a melt material. Board holding part 1
A and 1B are members 1A-1 and 1A-, respectively.
2, and is divided into two into 1B-1 and 1B-2.

この場合の保持方法は、部材1A−1,1A−
2間、および1B−1,1B−2間に基板固定治
具2を挟みこんだ状態で第1図2に示される石英
アンプル3に挿入する。
In this case, the holding method is as follows: members 1A-1, 1A-
2 and between 1B-1 and 1B-2, the substrate fixing jig 2 is inserted into the quartz ampoule 3 shown in FIG. 1 and 2.

基板固定治具2は基板としてのCdTe基板6を
取り付け固定する。
The substrate fixing jig 2 attaches and fixes a CdTe substrate 6 as a substrate.

第1図2において、基板6を取り付けた上記成
長治具と、スペーサの役目をする石英内管4と、
メルト5とを石英アンプール3に封入し、横型の
均熱炉に挿入する。
In FIG. 1, the growth jig with the substrate 6 attached thereto, the quartz inner tube 4 serving as a spacer,
The melt 5 is sealed in a quartz ampool 3 and inserted into a horizontal soaking furnace.

7は炉のヒータである。 7 is a heater for the furnace.

以上の本発明による構造の結晶成長装置におい
ては、基板固定治具2を保持治具1に保持すると
きに石英どうしがスリ合うことはなく、従つて石
英片は結晶基板表面に付着することはない。
In the crystal growth apparatus having the structure according to the present invention as described above, when the substrate fixing jig 2 is held on the holding jig 1, the quartz pieces do not rub against each other, and therefore, quartz pieces do not adhere to the surface of the crystal substrate. do not have.

実際の結晶成長は以下のように行う。 Actual crystal growth is performed as follows.

面指数(111)のCdTe基板の上にHg1-xCdxTe
(xは混晶比で0.2<x<0.3)を成長する場合、
メルト(溶液)は溶媒をTe、溶質をHgCdとし、
その組成は(Hg1-xCdx1-yTey(x、yは混晶比)
であらわされ、約500℃で飽和濃度となる組成を
選ぶ。
Hg 1-x Cd x Te on CdTe substrate with surface index (111)
(x is the mixed crystal ratio and when growing 0.2<x<0.3),
The melt (solution) uses Te as the solvent and HgCd as the solute.
Its composition is (Hg 1-x Cd x ) 1-y Te y (x, y are mixed crystal ratios)
Select a composition that has a saturation concentration at approximately 500°C.

メルトを飽和温度に保つて、石英アンプルを回
転してCdTe基板をメルトに浸漬した状態で炉温
を下げ、基板上にメルトからの析出を行う。
While keeping the melt at a saturation temperature, the quartz ampoule is rotated to lower the furnace temperature with the CdTe substrate immersed in the melt, and the melt is deposited on the substrate.

成長終了後は、さらに石英アンプルを回転して
基板をメルトから分離する。
After the growth is completed, the quartz ampoule is further rotated to separate the substrate from the melt.

〔発明の効果〕 以上詳細に説明したように本発明による結晶成
長装置においては、基板固定治具を保持治具に装
填する際、石英片が基板上に付着することはな
く、従つて石英片付着に起因する未成長等の結晶
欠陥の発生を防止できる。
[Effects of the Invention] As explained in detail above, in the crystal growth apparatus according to the present invention, when loading the substrate fixing jig into the holding jig, the quartz pieces do not adhere to the substrate, and therefore the quartz pieces do not adhere to the substrate. The occurrence of crystal defects such as non-growth due to adhesion can be prevented.

【図面の簡単な説明】[Brief explanation of drawings]

第1図1,2は本発明による閉管式チツピング
結晶成長装置を説明する斜視図、第2図1〜3は
従来例による閉管式チツピング結晶成長装置を説
明する斜視図である。 図において、1は保持治具、1A,1Bは基板
保持部、1Cはメルト保持部、2は基板固定治
具、3は石英アンプール、4は石英内管、5はメ
ルト、6は基板でCdTe基板、7は炉のヒータで
ある。
1 and 2 are perspective views illustrating a closed tube type chipping crystal growth apparatus according to the present invention, and FIGS. 2 1 to 3 are perspective views illustrating a conventional closed tube type chipping crystal growth apparatus. In the figure, 1 is a holding jig, 1A and 1B are substrate holders, 1C is a melt holder, 2 is a substrate fixing jig, 3 is a quartz ampoule, 4 is a quartz inner tube, 5 is a melt, and 6 is a substrate. The substrate 7 is a furnace heater.

Claims (1)

【特許請求の範囲】 1 石英アンプル3内に嵌合する2個の円筒形の
基板保持部1A,1Bと、両者を接続し、かつメ
ルト素材を保持するメルト保持部1Cとよりなる
保持治具1と、 表面に結晶を成長しようとする基板6を取り付
け、かつ該基板保持部1Aと1B間に保持される
基板固定治具2とを有し、 該基板保持部1A、および1Bがそれぞれ2分
割された部材1A−1,1A−2、および1B−
1,1B−2よりなり、前記部材1A−1,1A
−2間、および1B−1,1B−2間に該基板固
定治具2を挟みこんで固定するようにしたことを
特徴とする結晶成長装置。
[Claims] 1. A holding jig consisting of two cylindrical substrate holding parts 1A and 1B that fit into a quartz ampoule 3, and a melt holding part 1C that connects the two and holds the melt material. 1, and a substrate fixing jig 2 to which a substrate 6 on which a crystal is to be grown is attached and held between the substrate holders 1A and 1B, each of the substrate holders 1A and 1B having 2 Divided members 1A-1, 1A-2, and 1B-
1, 1B-2, said member 1A-1, 1A
A crystal growth apparatus characterized in that the substrate fixing jig 2 is sandwiched and fixed between 1B-2 and 1B-1 and 1B-2.
JP18121185A 1985-08-19 1985-08-19 Crystal growing device Granted JPS6242428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18121185A JPS6242428A (en) 1985-08-19 1985-08-19 Crystal growing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18121185A JPS6242428A (en) 1985-08-19 1985-08-19 Crystal growing device

Publications (2)

Publication Number Publication Date
JPS6242428A JPS6242428A (en) 1987-02-24
JPH0260065B2 true JPH0260065B2 (en) 1990-12-14

Family

ID=16096769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18121185A Granted JPS6242428A (en) 1985-08-19 1985-08-19 Crystal growing device

Country Status (1)

Country Link
JP (1) JPS6242428A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01264377A (en) * 1988-04-15 1989-10-20 Hitachi Ltd Video printer
JP2607641B2 (en) * 1988-10-03 1997-05-07 株式会社日立製作所 Video printer

Also Published As

Publication number Publication date
JPS6242428A (en) 1987-02-24

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