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JPH0260985B2 - - Google Patents
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JPH0260985B2 - - Google Patents

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Publication number
JPH0260985B2
JPH0260985B2 JP56082278A JP8227881A JPH0260985B2 JP H0260985 B2 JPH0260985 B2 JP H0260985B2 JP 56082278 A JP56082278 A JP 56082278A JP 8227881 A JP8227881 A JP 8227881A JP H0260985 B2 JPH0260985 B2 JP H0260985B2
Authority
JP
Japan
Prior art keywords
electro
voltage
measuring device
voltage measuring
linbo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56082278A
Other languages
Japanese (ja)
Other versions
JPS57196166A (en
Inventor
Tetsuo Yanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56082278A priority Critical patent/JPS57196166A/en
Publication of JPS57196166A publication Critical patent/JPS57196166A/en
Publication of JPH0260985B2 publication Critical patent/JPH0260985B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/24Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
    • G01R15/241Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using electro-optical modulators, e.g. electro-absorption
    • G01R15/242Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using electro-optical modulators, e.g. electro-absorption based on the Pockels effect, i.e. linear electro-optic effect
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305Constructional arrangements

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Measurement Of Current Or Voltage (AREA)

Description

【発明の詳細な説明】 本発明は電気光学効果を用いた電圧測定装置に
関するものであり、温度特性の優れた高精度測定
が可能な電圧測定装置を提供することを目的とす
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a voltage measuring device using an electro-optical effect, and an object of the present invention is to provide a voltage measuring device capable of highly accurate measurement with excellent temperature characteristics.

LiNbO3等の電気光学結晶の電気光学効果を利
用して高圧送電線などの電圧を光学的に測定する
電圧測定装置は、絶縁性や電磁誘導ノイズの点で
すぐれており、抵抗分圧法やコンデンサ分圧法な
どによる電気的測定法に比較して多くの長所を有
している。
Voltage measurement devices that optically measure the voltage of high-voltage power transmission lines using the electro-optic effect of electro-optic crystals such as LiNbO 3 have excellent insulation properties and electromagnetic induction noise, and are compatible with resistive voltage division methods and capacitors. It has many advantages compared to electrical measurement methods such as the partial pressure method.

第1図は電気光学効果を利用した電圧測定装置
の従来例であり、Z方向に垂直に切断した
LiNbO3単結晶1に対して、z軸に平行な方向に
レーザ光2を通し、x軸方向に電極3,3′によ
り電界を印加し、これを1/4波長板6とともに偏
光子4と検光子5との間に置くことにより電圧測
定装置を構成している。同装置に偏向子4側より
入射したレーザ光2の出力強度は電気光学効果を
有するLiNbO3単結晶1に印加される印加電圧V
により変化し、この出力強度変化から印加電圧V
を検知することができる。
Figure 1 shows a conventional example of a voltage measuring device that uses the electro-optic effect, and is cut perpendicular to the Z direction.
A laser beam 2 is passed through a LiNbO 3 single crystal 1 in a direction parallel to the z-axis, an electric field is applied in the x-axis direction by electrodes 3 and 3', and this is applied to a quarter-wave plate 6 and a polarizer 4. By placing it between the analyzer 5 and the analyzer 5, a voltage measuring device is constructed. The output intensity of the laser beam 2 entering the device from the polarizer 4 side is determined by the applied voltage V applied to the LiNbO 3 single crystal 1 having an electro-optic effect.
From this change in output intensity, the applied voltage V
can be detected.

しかしながら本構成の電圧測定装置に対し種々
の測定実験を行つた結果、LiNbO3単結晶1の温
度変化に対し光出力はステツプ状の不規則な変化
を示すことが判明し、このままでは電圧測定装置
として安定に動作しないことが明らかになつた。
However, as a result of performing various measurement experiments on the voltage measuring device with this configuration, it was found that the optical output showed irregular steps in response to temperature changes in the LiNbO 3 single crystal 1. It became clear that it did not work stably.

第2図は、この第1図の電圧測定装置において
LiNbO3単結晶1の温度(横軸)を変化させたと
きの光出力(縦軸)の変化の状態を示している。
同図より先に述べたように温度変化に対し、光出
力はステツプ状の不規則な変化を示しており、本
装置が周囲温度の変動のため光出力に誤差が生じ
ることがわかる。
Figure 2 shows the voltage measuring device shown in Figure 1.
It shows how the optical output (vertical axis) changes when the temperature (horizontal axis) of the LiNbO 3 single crystal 1 is changed.
As mentioned earlier in the figure, the optical output shows irregular step-like changes in response to temperature changes, indicating that errors occur in the optical output of this device due to fluctuations in ambient temperature.

このような現象が生じる原因は必ずしも明らか
ではないが、焦電効果によるものと考えられる。
すなわち焦電効果とは、昭温度変化により
LiNbO3結晶等のZ面に電荷が発生する現象であ
り、前記電荷のために測定電界以外の電界が
LiNbO3単結晶に生じることになり、電圧測定の
誤差が生じることになる。
Although the cause of this phenomenon is not necessarily clear, it is thought to be due to the pyroelectric effect.
In other words, the pyroelectric effect is caused by changes in temperature.
This is a phenomenon in which a charge is generated on the Z plane of a LiNbO 3 crystal, etc., and due to the charge, an electric field other than the measured electric field is
This will occur in the LiNbO 3 single crystal, resulting in an error in voltage measurement.

本発明は上記従来の欠点を除去した新規な構成
の電圧測定装置、すなわち電気光学効果を応用し
た温度変動により出力変動の生じない高精度な電
圧測定装置を提供するものである。
The present invention provides a voltage measuring device with a novel configuration that eliminates the above-mentioned conventional drawbacks, that is, a highly accurate voltage measuring device that does not cause output fluctuations due to temperature fluctuations by applying the electro-optical effect.

第3図は本発明の一実施例における電圧測定装
置の構成を示すものであり、従来例と同一箇所に
は同一番号を付してある。
FIG. 3 shows the configuration of a voltage measuring device according to an embodiment of the present invention, and the same parts as in the conventional example are given the same numbers.

同装置の特徴はLiNbO3単結晶1(結晶方向は
第1図と同じ)のZ面に透明電極7,7′を設け、
これらの透明電極7と7′を金リード線8により
相互に電気的に接続していることである。
The feature of this device is that transparent electrodes 7, 7' are provided on the Z plane of LiNbO 3 single crystal 1 (crystal direction is the same as in Fig. 1).
These transparent electrodes 7 and 7' are electrically connected to each other by a gold lead wire 8.

上記互互いに短絡させた電極7,7′を
LiNbO3単結晶に取り付けることにより、従来大
きな欠点となつていた温度変化による光出力の不
規則な変化を完全に取り除くことが可能であるこ
とを本発明者は見い出した。
The above-mentioned electrodes 7 and 7' which are short-circuited to each other are
The present inventors have discovered that by attaching it to a LiNbO 3 single crystal, it is possible to completely eliminate irregular changes in light output due to temperature changes, which has been a major drawback in the past.

すなわち、本実施例のようにLiNbO3単結晶の
Z面に設けた電極7,7′を電気的に接続するこ
とにより、温度変動によつてLiNbO3単結晶のZ
面に発生した電荷を互いに打ち消し合うことがで
き、前記電荷による測定誤差の原因となる電界の
発生を防止できることになる。
That is, by electrically connecting the electrodes 7 and 7' provided on the Z plane of the LiNbO 3 single crystal as in this embodiment, the Z of the LiNbO 3 single crystal is
The charges generated on the surface can cancel each other out, and it is possible to prevent the generation of an electric field that causes measurement errors due to the charges.

なお電極はInO2,SnO2等の導電性透明材料、
あるいは光の半透明膜であるAu,Ag,Al等より
なるハーフミラーを用いてもよい。
The electrodes are made of conductive transparent materials such as InO 2 and SnO 2 .
Alternatively, a half mirror made of Au, Ag, Al, etc., which is a semitransparent film for light, may be used.

また、第3図の実施例は、電極を金リード線で
短絡したものであるが、第4図の他の実施例に示
す様に導電性透明物質9で結晶の側面をおおう構
成であつてもよい。この場合、電圧印加用電極3
(結晶の下面にもある)とこの導電性透明物質9
との間の絶縁性が保たれるように相互の間隔を適
当に離す必要がある。
Further, in the embodiment shown in FIG. 3, the electrodes are short-circuited with gold lead wires, but as shown in another embodiment shown in FIG. Good too. In this case, the voltage application electrode 3
(also on the bottom surface of the crystal) and this conductive transparent material 9
It is necessary to keep an appropriate distance between them so that the insulation between them is maintained.

さらに、被測定部に置かれた電気光学結晶に対
し、レーザ装置等の光源より直接光ビームを導く
構成の代りに、光フアイバなどの光伝搬体を介し
て光源より電気光学結晶に光を導く遠隔測定が可
能な電圧測定装置においても、本発明は当然適用
可能である。
Furthermore, instead of a configuration in which a light beam is directly guided from a light source such as a laser device to the electro-optic crystal placed on the part to be measured, light is guided from the light source to the electro-optic crystal via a light propagation medium such as an optical fiber. The present invention is naturally applicable to voltage measuring devices that can perform remote measurements.

第5図はこのような光フアイバを応用した電圧
測定装置の詳細を示した実施例である。同装置
は、光源10から光フアイバ11を通じ高圧電線
12の近傍に置いたロツドレンズ13、偏向プリ
ズム14、偏光分離プリズム15、両端のZ面に
設けられた透明電極16,16′が電気的に接続
されたLiNbO3単結晶17、1/4波長板18を通
したあと、互いに直交する偏波成分を2本の光フ
アイバ19,20により受光部21に導びき信号
処理することにより高圧電線12の電圧を検知す
るものである。この場合高圧電線12と大地22
間に発生する空間電界Eを電気光学効果を有する
LiNbO3単結晶に作用させることにより、出力光
量に変化を生じさせ、電圧測定を行なうものであ
る。
FIG. 5 shows an embodiment showing details of a voltage measuring device using such an optical fiber. In this device, a rod lens 13 placed near a high-voltage electric wire 12, a deflection prism 14, a polarization separation prism 15, and transparent electrodes 16 and 16' provided on the Z plane at both ends are electrically connected through an optical fiber 11 from a light source 10. After passing through the LiNbO 3 single crystal 17 and the quarter-wave plate 18, the mutually orthogonal polarized components are guided to the light receiving section 21 by two optical fibers 19 and 20 and subjected to signal processing. It detects voltage. In this case, the high voltage electric wire 12 and the ground 22
The spatial electric field E generated between
By acting on the LiNbO 3 single crystal, the amount of output light is changed and the voltage is measured.

なお、同図において1/4波長板18は光学バイ
アス用のものであり、結晶の複屈折そのものを利
用する場合は必ずしも必要ない。
Note that the 1/4 wavelength plate 18 in the figure is for optical bias, and is not necessarily necessary when the birefringence of the crystal itself is utilized.

本発明にかかる電圧測定装置は温度変動に対す
る光出力の安定化に大きな効果を有するものであ
り、ここで取り上げた電圧測定装置のみならず、
光変調装置に適用した場合においても同様の効果
が期待できる。また第3図に示す様なZ方向に光
を通し、x方向に電界を印加する結晶配置は光源
としてレーザ光のみならず発光ダイオードなどの
発光スペクトルの広い光源を用いても有効に動作
するためにレーザ光源特有のノイズを避けること
ができ、また装置の低価格化の点でも有利であ
る。
The voltage measuring device according to the present invention has a great effect on stabilizing optical output against temperature fluctuations, and is not limited to the voltage measuring device mentioned here.
Similar effects can be expected when applied to a light modulation device. In addition, the crystal arrangement that passes light in the Z direction and applies an electric field in the x direction, as shown in Figure 3, works effectively not only with laser light but also with light sources with a wide emission spectrum such as light emitting diodes, such as light emitting diodes. It is possible to avoid the noise peculiar to a laser light source, and it is also advantageous in terms of reducing the cost of the device.

また材料的には、ここでとりあげたLiNbO3
結晶に限るものではなく、例えばLiTaO3,Sr0.25
Ba0.75Nb2O6などの焦電効果を有する電気光学結
晶に対しても、Z面に設けた導電膜を電気的に接
続することにより得られる効果は同様である。さ
らに高圧電線近傍の空間電界を測定する場合、電
圧印加用電極は必ずしも必要としない。
In addition, the material is not limited to the LiNbO 3 single crystal mentioned here; for example, LiTaO 3 , Sr 0.25
The same effect can be obtained by electrically connecting a conductive film provided on the Z plane to an electro-optic crystal having a pyroelectric effect such as Ba 0.75 Nb 2 O 6 . Furthermore, when measuring a spatial electric field near a high-voltage electric wire, a voltage applying electrode is not necessarily required.

以上説明したように本発明の電圧測定装置は、
温度変動による従来不可能であつた測定誤差を防
止できるもので工業的利用価値が大きい。
As explained above, the voltage measuring device of the present invention has
It can prevent measurement errors caused by temperature fluctuations, which was previously impossible, and has great industrial value.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の電圧測定装置の構成図、第2図
は同装置における温度と光出力との関係を示す
図、第3図は本発明の実施例にかかる電圧測定装
置の構成図、第4図は本発明の他の実施例にかか
る電圧測定装置の構成図、第5図は本発明のさら
に他の実施例における電圧測定装置の構成図であ
る。 1,17……LiNbO3単結晶、2……レーザ光
線、3,3′……測定用印加電極、4……偏光子、
5……検光子、6,18……1/4波長板、7,
7′,9,16,16′……透明電極、8……金リ
ード線、10……光源、11,19,20……光
フアイバ、12……高圧送電線、13……ロツド
レンズ、14……偏光プリズム、15……偏光分
離プリズム。
FIG. 1 is a configuration diagram of a conventional voltage measurement device, FIG. 2 is a diagram showing the relationship between temperature and light output in the same device, and FIG. 3 is a configuration diagram of a voltage measurement device according to an embodiment of the present invention. FIG. 4 is a block diagram of a voltage measuring device according to another embodiment of the present invention, and FIG. 5 is a block diagram of a voltage measuring device according to still another embodiment of the present invention. 1, 17... LiNbO 3 single crystal, 2... Laser beam, 3, 3'... Measurement application electrode, 4... Polarizer,
5...Analyzer, 6,18...1/4 wavelength plate, 7,
7', 9, 16, 16'... Transparent electrode, 8... Gold lead wire, 10... Light source, 11, 19, 20... Optical fiber, 12... High voltage power transmission line, 13... Rod lens, 14... ...Polarization prism, 15...Polarization separation prism.

Claims (1)

【特許請求の範囲】 1 電気光学結晶と、この電気光学結晶のZ軸に
平行な方向に前記結晶の一方のZ面から他方のZ
面に光を通過させる手段と、前記電気光学結晶を
通過する光の量を検知する手段とを有する電圧測
定装置において、被測定電界を前記結晶のX軸に
平行な方向に印加するとともに、前記電気光学結
晶の一方および他方のZ面に第1、第2の導電性
膜を設け、前記第1、第2の導電性膜を電気的に
接続したことを特徴とする電圧測定装置。 2 電気光学結晶がLiNbO3であることを特徴と
する特許請求の範囲第1項記載の電圧測定装置。
[Scope of Claims] 1. An electro-optic crystal, and an electro-optic crystal that extends from one Z-plane of the crystal to the other Z-plane in a direction parallel to the Z-axis of the electro-optic crystal.
In a voltage measuring device having means for passing light through a surface and means for detecting the amount of light passing through the electro-optic crystal, an electric field to be measured is applied in a direction parallel to the X-axis of the crystal, and 1. A voltage measuring device, characterized in that first and second conductive films are provided on one and the other Z plane of an electro-optic crystal, and the first and second conductive films are electrically connected. 2. The voltage measuring device according to claim 1, wherein the electro-optic crystal is LiNbO 3 .
JP56082278A 1981-05-28 1981-05-28 Voltage measurement device Granted JPS57196166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56082278A JPS57196166A (en) 1981-05-28 1981-05-28 Voltage measurement device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56082278A JPS57196166A (en) 1981-05-28 1981-05-28 Voltage measurement device

Publications (2)

Publication Number Publication Date
JPS57196166A JPS57196166A (en) 1982-12-02
JPH0260985B2 true JPH0260985B2 (en) 1990-12-18

Family

ID=13770029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56082278A Granted JPS57196166A (en) 1981-05-28 1981-05-28 Voltage measurement device

Country Status (1)

Country Link
JP (1) JPS57196166A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257325A (en) * 1984-06-05 1985-12-19 Yokogawa Hokushin Electric Corp Photovoltage sensor
GB2209609B (en) * 1987-09-09 1991-06-26 Ferranti Plc Optical modulators
JPH01182824A (en) * 1988-01-14 1989-07-20 Ngk Insulators Ltd Optical element
JP2550730B2 (en) * 1989-12-29 1996-11-06 富士通株式会社 Optical waveguide device and manufacturing method thereof
EP1441242B1 (en) * 2001-11-01 2013-03-13 Mitsubishi Electric Corporation Waveplate, wavelength filter and wavelength monitor
EP2479581A1 (en) * 2011-01-21 2012-07-25 PowerSense A/S An AC or DC power transmission system and a method of measuring a voltage
CN110703467A (en) * 2019-10-15 2020-01-17 中国电力科学研究院有限公司 Crystal heat dissipation structure for temperature drift suppression of electro-optic modulator and manufacturing method

Also Published As

Publication number Publication date
JPS57196166A (en) 1982-12-02

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