JPH0328003B2 - - Google Patents
Info
- Publication number
- JPH0328003B2 JPH0328003B2 JP56116638A JP11663881A JPH0328003B2 JP H0328003 B2 JPH0328003 B2 JP H0328003B2 JP 56116638 A JP56116638 A JP 56116638A JP 11663881 A JP11663881 A JP 11663881A JP H0328003 B2 JPH0328003 B2 JP H0328003B2
- Authority
- JP
- Japan
- Prior art keywords
- contact
- plating
- ruo
- encapsulated
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【発明の詳細な説明】
本発明はリードスイツチなどの封入接点スイツ
チに関し、特に大電力開閉に適合する接点を有す
る封入接点スイツチに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an encapsulated contact switch such as a reed switch, and more particularly to an encapsulated contact switch having contacts suitable for high power switching.
従来のリードスイツチの接点部はロジウムRh
およびルテニウムRuなどの単一金属、または金
AuとニツケルNiあるいは金Auと鉄Feなどの拡
散合金などにより構成されている。また、これら
の接点金属は数μm程度の厚さしか付着すること
が出来ず大きな電流または電圧の開閉には不向で
あつた。一方、リードスイツチのようにガラス管
内に封入されたもの以外の電磁継電器接点では、
比較的大きな電力を開閉できるように、銀Agな
どの中に酸化カドミウムCdO、酸化インジウム
In2O3および酸化錫SnO2などの酸化物あるいは炭
化タングステンWCなどの炭化物を焼結法あるい
は内部酸化法などで分散せしめて複合接点として
いる。これにより、粘着防止およびアークによる
接点の消耗の減少をはかつている。しかしなが
ら、これら複合接点材料は焼結法および内部配化
法によつて非常に薄い接点構成しか許されない小
形リードスイツチなどには適用できなかつた。 Conventional reed switch contacts are made of rhodium.
and single metals such as ruthenium Ru, or gold
It is composed of diffusion alloys such as Au and Nickel-Ni or gold-Au and iron-Fe. Furthermore, these contact metals could only be deposited to a thickness of about several micrometers, making them unsuitable for switching large currents or voltages. On the other hand, in electromagnetic relay contacts other than those sealed in glass tubes such as reed switches,
Cadmium oxide (CdO), indium oxide (indium oxide,
In 2 O 3 and oxides such as tin oxide SnO 2 or carbides such as tungsten carbide WC are dispersed by a sintering method or an internal oxidation method to form a composite contact. This prevents adhesion and reduces contact wear due to arcing. However, these composite contact materials cannot be applied to small reed switches, etc., where only very thin contact structures are allowed due to the sintering and internal placement methods.
本発明の目的は、任意の接合金属と酸化物との
複合材料接点を分散メツキ法によつて形成するこ
とにより、大電力開閉に適合する封入接点スイツ
チを提供するものである。 An object of the present invention is to provide an encapsulated contact switch suitable for high power switching by forming composite material contacts of arbitrary bonding metals and oxides by a dispersion plating method.
本発明による封入接点スイツチは、電磁的に駆
動されて接触・開離する一方の端部を密閉容器内
で対向し且つ他方の端部を前記容器に貫通固着し
た磁性棒状電導体の前記対向端部にルテニウム
Ruと酸化ルテニウムRuO2とより成る分散メツキ
接点部を備えたことを特徴とする。 The encapsulated contact switch according to the present invention comprises the opposite ends of a magnetic bar-shaped electrical conductor, one end of which is electromagnetically driven to make contact and release, is opposite to each other in a sealed container, and the other end is fixed to the container by penetrating through the container. Ruthenium in the part
It is characterized by having a distributed plating contact portion made of Ru and ruthenium oxide RuO 2 .
本発明による封入接点スイツチは次のような技
術思想に基いて成される。金属と他の物質との複
合材を作る一つの手段としてメツキ液中に複合化
せしめようとする不溶性粒子を懸濁させ、金属析
出と同時にこの懸濁粒子を共折せしめる分散メツ
キ法がある。この方法は多くの種類の分散材料を
選ぶことができ、複合材料形成に優れるものであ
り、リードスイツチの如く薄い接点皮膜層を用い
る機器の機能拡張に有用な手段である。たとえ
ば、現在リードスイツチ接点金属として多されて
いるRuの金属メツキ液中にこれらの接点の融着、
異常消耗および接点金属の転移を抑制する為の酸
化物などの微粒子を懸濁せしめ、この液を撹拌し
ながら、電解メツキ法あるいは無電解メツキ法に
より、メツキ膜を形成せしめれば、懸濁微粒子が
被メツキ面である陰極面に物理吸着され粒子の帯
電電荷と陰極面間のクーロン力により固着され、
さらに周辺の析出金属により本格的にメツキ膜中
に分散状態で包含される。 The enclosed contact switch according to the present invention is based on the following technical idea. One means of making a composite material of metal and other substances is the dispersion plating method, in which insoluble particles to be composited are suspended in a plating solution, and the suspended particles are co-deposited at the same time as the metal is deposited. This method allows selection of many types of dispersion materials, is excellent for forming composite materials, and is a useful means for expanding the functionality of devices such as reed switches that use thin contact coating layers. For example, these contacts can be fused into Ru metal plating liquid, which is currently used as a contact metal for reed switches.
If fine particles such as oxides to suppress abnormal wear and transfer of contact metals are suspended and a plating film is formed by electrolytic plating or electroless plating while stirring this solution, the suspended fine particles can be removed. is physically adsorbed to the cathode surface, which is the surface to be plated, and is fixed by the electrostatic charge of the particles and the Coulomb force between the cathode surface.
Furthermore, the surrounding precipitated metal is included in a fully dispersed state in the plating film.
以下、図面を参照して本発明の実施例について
説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明の一実施例にかかわるリード接
点を示すもので符号１は52％Fe・Ni合金などで
作られるリード片、２はAuまたはAgなどの下地
メツキ層、３は分散メツキされ、接点被膜層であ
る。下地メツキ層２は接点皮膜層３との密着性を
良くするためのものであり必ずしも要さない。ま
た、第２図は第１図に示すリード片１をガラス管
４に封着し、リードスイツチとして組立てたもの
を示す。通常、ガラス管４内には不活性ガス（チ
ツ素N2）が封入される。 Figure 1 shows a lead contact according to an embodiment of the present invention, where 1 is a lead piece made of 52% Fe/Ni alloy, 2 is a base plating layer such as Au or Ag, and 3 is a dispersion plated layer. , a contact coating layer. The base plating layer 2 is provided to improve adhesion to the contact film layer 3 and is not necessarily required. Furthermore, FIG. 2 shows the reed piece 1 shown in FIG. 1 sealed to a glass tube 4 and assembled as a reed switch. Usually, the glass tube 4 is filled with an inert gas (nitrogen N 2 ).
ここで、接点皮膜層の分散メツキの具体例とし
てまずRuにRuO2を分散せしめる場合につき説明
する。Ruを１当り１〜５ｇ含むメツキ液中に
表面活性剤であらかじめ処理した粒径約1μmの
RuO2を１当り10〜500ｇ懸濁せしめ、液温約70
℃、PH1.9および電流密度1.5A／ｄm2の条件で撹
拌しながらあらかじめAuの下地メツキを1μm施
したリード片上に電折せしめると、RuとRuO2分
散複合メツキ接点を形成することが出来る。Ru
は高融点且つ耐食性など接点材料として優れたも
のであり、RuO2も安定な良点導体であるので接
触面に皮膜（RuO2）を含むにも拘らず接触抵抗
が小さい。そこで大電流を通電しても溶着し難く
Ruの耐アーク性の大きいことと相乗して大電流
開閉条件に耐える接点を得ることが出来る。 Here, as a specific example of dispersion plating of a contact film layer, a case will be described in which RuO 2 is dispersed in Ru. Particles of approximately 1 μm in size were pretreated with a surfactant in a plating solution containing 1 to 5 g of Ru per unit.
Suspend 10 to 500g of RuO 2 per liquid at a temperature of about 70°C.
℃, PH 1.9, and current density 1.5 A/dm 2 while stirring on a lead piece with a 1 μm Au underplating, a Ru and RuO 2 dispersed composite plating contact can be formed. . Ru
RuO 2 is an excellent contact material due to its high melting point and corrosion resistance, and since RuO 2 is also a stable good conductor, the contact resistance is low despite the film (RuO 2 ) included on the contact surface. Therefore, it is difficult to weld even when a large current is applied.
Combined with the high arc resistance of Ru, it is possible to obtain contacts that can withstand large current switching conditions.
なお、次のような実施もこの発明では可能であ
る。つまり、リード接点を多層構成としてRu，
Rh，Au等の下地層の上に分散メツキを施すこと
により多層接点とすること、また、異種対向接点
として、リードスイツチの一方の接片にRu，
Rh，Au等の接点材を用い他方の接片を分散メツ
キ接点としてリードスイツチを得る。 Note that the following implementation is also possible with this invention. In other words, the lead contact has a multilayer structure, Ru,
Multi-layer contacts can be created by applying dispersion plating on the underlying layer such as Rh and Au.Also, one contact piece of the reed switch can be made of Ru or
A reed switch is obtained by using a contact material such as Rh or Au and using the other contact piece as a distributed plating contact.
以上説明したように本発明によれば、分散メツ
キによつて複合材料接点を膜形成することによ
り、極めて小さい寸法に配置される接点導出端子
に所望の厚さの接点を構成でき、且つ、大電力開
閉を高信頼度になす封入接点スイツチが得られ
る。 As explained above, according to the present invention, by forming a composite material contact into a film by dispersion plating, a contact of a desired thickness can be formed on a contact lead-out terminal arranged in an extremely small size, and a contact of a large size can be formed. An encapsulated contact switch that makes power switching highly reliable can be obtained.
第１図および第２図は本発明による封入接点ス
イツチの一実施例を示す構成図である。
１…Fe・Ni合金よりなるリード片、２…Auま
たはAgなどの下地メツキ層、３…分散メツキ層、
４…ガラス管。
1 and 2 are block diagrams showing one embodiment of an encapsulated contact switch according to the present invention. 1... Lead piece made of Fe/Ni alloy, 2... Base plating layer of Au or Ag, etc., 3... Dispersion plating layer,
4...Glass tube.
Claims (1)
部を密閉容器内で対向し且つ他方の端部を前記容
器に貫通固着した磁性棒状電導体の前記対向端部
にルテニウムRuと酸化ルテニウムRuO2とより成
る分散メツキ接点部を備えたことを特徴とする封
入接点スイツチ。1 Ruthenium Ru and ruthenium oxide are attached to the opposing ends of a magnetic rod-shaped conductor, one end of which is electromagnetically driven into contact and separation, facing each other in a closed container, and the other end penetrating and fixed to said container. An encapsulated contact switch characterized by having a distributed plated contact portion made of RuO 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11663881A JPS5818822A (en) | 1981-07-24 | 1981-07-24 | Sealed contact switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11663881A JPS5818822A (en) | 1981-07-24 | 1981-07-24 | Sealed contact switch |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5818822A JPS5818822A (en) | 1983-02-03 |
| JPH0328003B2 true JPH0328003B2 (en) | 1991-04-17 |
Family
ID=14692151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11663881A Granted JPS5818822A (en) | 1981-07-24 | 1981-07-24 | Sealed contact switch |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5818822A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5266951A (en) * | 1975-11-29 | 1977-06-02 | Matsushita Electric Works Ltd | Plated contacts |
-
1981
- 1981-07-24 JP JP11663881A patent/JPS5818822A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5818822A (en) | 1983-02-03 |
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