JPH0330981B2 - - Google Patents
Info
- Publication number
- JPH0330981B2 JPH0330981B2 JP59218101A JP21810184A JPH0330981B2 JP H0330981 B2 JPH0330981 B2 JP H0330981B2 JP 59218101 A JP59218101 A JP 59218101A JP 21810184 A JP21810184 A JP 21810184A JP H0330981 B2 JPH0330981 B2 JP H0330981B2
- Authority
- JP
- Japan
- Prior art keywords
- decomposition
- semiconductor thin
- hydrofluoric acid
- thin film
- decomposition liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- Weting (AREA)
- Sampling And Sample Adjustment (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、半導体薄膜の分解装置に関する。
〔発明の技術的背景〕
SiO2膜やSi3N4膜のような半導体薄膜は、その
中にNa，Ｋ，Fe等の金属不純物が存在すると、
例えその量が極微量のものであつても半導体素子
の電気的特性に悪影響を及ぼす。このため優れた
電気的特性を備えた半導体素子を得るには、半導
体薄膜中の金属不純物の量を可能な限り少なくす
る必要がある。その結果、半導体薄膜中の金属不
純物の量を極めて正確に測定できる半導体薄膜の
分解装置が要求されている。このような要求に応
えるものとして、従来第２図に示す如き構造の半
導体薄膜の分解装置が使用されている。図中１
は、上部の開口部を蓋体２で塞いだ密閉容器であ
る。密閉容器１内には、ウエハキヤリア保持台３
が設置されている。ウエハキヤリア保持台３に
は、半導体薄膜４を形成したウエハ５の複数枚を
保持したウエハキヤリア６が支持されている。ウ
エハキヤリア６の直下のウエハキヤリア保持台３
上には、分解液受皿７が設置されている。ウエハ
キヤリア保持台３の近傍には、超高純度の弗化水
素酸８を収容した弗化水素酸貯蔵槽９が設けられ
ている。なお、同図中１０は、ウエハキヤリア６
の上部に取付けられたキヤリアカバーであり、１
１は弗化水素酸８で分解した半導体薄膜４の分解
液である。
〔背景技術の問題点〕
このように構成された従来の半導体薄膜の分解
装置は、弗化水素酸８の蒸気が密閉容器１内に均
一に拡散しないために、ウエハキヤリア６上のウ
エハ５の位置によつて半導体薄膜４の分解速度が
異なる。また、弗化水素酸８の液量及び蒸発量が
少ないため、常温での弗化水素酸の蒸発速度が遅
く分解時間が長いと共に、分解液１１の量も少な
い。更に、分解液１１が再蒸発して他の分解液１
１中に混入し易い、その結果、分析速度が低下す
る問題があつた。
〔発明の目的〕
本発明は、弗化水素酸の分解時間を短縮し、か
つ、分解液量を増加すると共に、分解液の再蒸発
を防止して分析精度の向上を達成した半導体薄膜
の分解装置を提供することをその目的とするもの
である。
〔発明の概要〕
本発明は、密閉容器内に回転羽を設け、加熱用
ヒータを取付けた弗化水素酸貯蔵槽を分解液受皿
の両側に設けると共に、分解液受皿に冷却機構を
設けたことにより、弗化水素酸の分解時間を短縮
し、かつ、分解液量を増加し、かつ、分解液の再
蒸発を防止して分析精度を向上した半導体薄膜の
分解装置である。
〔発明の実施例〕
以下、本発明の実施例について図面を参照して
説明する。第１図は、本発明の一実施例の概略構
成を示す説明図である。図中２０は、上部の開口
部を蓋体２１で塞いだ密閉容器である。密閉容器
２０の内部に臨む蓋体２１の内壁面には、回転羽
２２が設けられている。回転羽２２は、蓋体２１
の外面に取付けられたモータ２３で回転するよう
になつている。密閉容器２０の床部には、回転羽
２２に対向してキヤリア支持壁２４が突設してい
る。キヤリア支持壁２４上には、半導体薄膜２５
を形成したウエハ３４の複数枚を搭載したウエハ
キヤリア２６が設置されるようになつている。キ
ヤリア支持壁２４に囲まれた床部上には、分解液
受皿２７が設置されている。分解液受皿２７の設
置場所に対応した密閉容器２０の床部の裏面側に
は、冷却器２８が取付けられている。冷却器２８
には、冷却水２９の流入口３０と流出口３１が形
成されている。キヤリア支持壁２４と密閉容器２
０の内壁面で挾まれた分解液受皿２７の両側部に
は、超高純度の弗化水素酸３５を収容する弗化水
素酸貯蔵槽３２が設けられている。また、弗化水
素酸貯蔵槽３２に対応する密閉容器２０の裏面側
には、加熱用ヒータ３３が取付けられている。
このように構成された半導体薄膜の分解装置４
０によれば、次のようにして半導体薄膜２５中の
金属不純物の分析を行なう。先ず、半導体薄膜２
５を形成したウエハ３４をウエハキヤリア２６に
搭載し、これを密閉容器２０内のキヤリア支持壁
２４上に載置する。次いで、弗化水素酸貯蔵槽３
２内に超高純度の弗化水素酸３５を満してから密
閉容器２０の開口部を蓋体２１で塞ぐ。然る後、
モータ２３により回転羽２２を所定の回転数で回
転し、加熱用ヒータ３３で弗化水素酸３５を所定
温度まで加熱すると共に、冷却器２８中に冷却水
２９を流入した分解液受皿２７を所定温度まで冷
却した状態で、所定時間放置する。次に、この放
置時間内に多量に発生した弗化水素酸３５の蒸気
３６で分解された半導体薄膜２５の分解液３７を
マイクロピペツトで分解液受皿２７から回収し、
撹拌、計量後直接フレームレス原子吸光分析装置
にかけて金属不純物の分析を行う。
このようにこの半導体薄膜の分解装置４０で
は、加熱用ヒータ３３を設けたので弗化水素酸３
５の蒸発速度を速めて蒸気量を増加させることが
できる。弗化水素酸３５の蒸気量の増加は、弗化
水素酸貯蔵槽３２をキヤリア支持壁２４の両側に
設けたことによつて更に助長される。発生した弗
化水素酸３５の蒸気３６は、回転羽２２の回転に
よつて密閉容器２０の内部に均一にかつ効果的に
拡散される。その結果、半導体薄膜２５は、多量
に発生した弗化水素酸３５の蒸気３６によつて極
めて短い分解時間で分解される。しかも、分解液
受皿２７が冷却器２８で十分に冷却されているの
で、一度収容された分解液３７が再蒸発して他の
分解液３７中に混入するのを防止することができ
る。その結果、金属不純物の分析精度を著しく向
上させることができる。
因みに、実施例の半導体薄膜の分解装置４０で
は、密閉容器２０内の空間体積が約16000cm3で半
導体薄膜２５の膜厚が10000Åの場合、半導体薄
膜２５の分解時間は、膜の種類が熱酸化SiO2膜
の場合には従来の装置では40分を要したとところ
15分に短縮することができた。また、膜の種類が
減圧CVD−Si3N4膜の場合には従来の装置では
120分を要したところ60分に分解時間を短縮する
ことができた。また、分解液３７の回収量は、半
導体薄膜２５の厚さ400Å当りに対して、実施例
の装置では80〜100μであつたが、従来の装置
では20〜30μであつた。
〔発明の効果〕
以上説明した如く、本発明に係る半導体薄膜の
分解装置によれば、弗化水素酸の分解時間を短縮
し、かつ、分解液量を増加すると共に、分解液の
再蒸発を防止して分析精度を向上させることがで
きるものである。 DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an apparatus for decomposing semiconductor thin films. [Technical Background of the Invention] Semiconductor thin films such as SiO 2 films and Si 3 N 4 films have problems when metal impurities such as Na, K, and Fe are present in them.
Even if the amount is extremely small, it adversely affects the electrical characteristics of the semiconductor device. Therefore, in order to obtain a semiconductor element with excellent electrical characteristics, it is necessary to reduce the amount of metal impurities in the semiconductor thin film as much as possible. As a result, there is a need for a semiconductor thin film decomposition apparatus that can very accurately measure the amount of metal impurities in a semiconductor thin film. In order to meet these demands, a semiconductor thin film decomposition apparatus having a structure as shown in FIG. 2 has conventionally been used. 1 in the diagram
is an airtight container whose upper opening is closed with a lid 2. Inside the airtight container 1 is a wafer carrier holding stand 3.
is installed. The wafer carrier holder 3 supports a wafer carrier 6 that holds a plurality of wafers 5 on which a semiconductor thin film 4 is formed. Wafer carrier holding stand 3 directly below wafer carrier 6
A decomposition liquid receiving tray 7 is installed above. A hydrofluoric acid storage tank 9 containing ultra-high purity hydrofluoric acid 8 is provided near the wafer carrier holding table 3 . In addition, 10 in the same figure is the wafer carrier 6.
It is a carrier cover attached to the top of the
1 is a decomposition solution of the semiconductor thin film 4 decomposed with hydrofluoric acid 8. [Problems in the Background Art] In the conventional semiconductor thin film decomposition apparatus configured as described above, the vapor of the hydrofluoric acid 8 does not uniformly diffuse into the closed container 1, so that the wafer 5 on the wafer carrier 6 is The decomposition rate of the semiconductor thin film 4 differs depending on the position. Further, since the liquid amount and evaporation amount of hydrofluoric acid 8 are small, the evaporation rate of hydrofluoric acid at room temperature is slow, the decomposition time is long, and the amount of decomposition liquid 11 is also small. Furthermore, the decomposed liquid 11 re-evaporates and becomes another decomposed liquid 1.
There was a problem that it was easy to get mixed into 1, resulting in a decrease in analysis speed. [Object of the Invention] The present invention provides a method for decomposing semiconductor thin films that shortens the decomposition time of hydrofluoric acid, increases the amount of decomposition liquid, and prevents re-evaporation of the decomposition liquid, thereby improving analysis accuracy. Its purpose is to provide a device. [Summary of the Invention] The present invention provides a hydrofluoric acid storage tank equipped with a rotating blade in a closed container and a heater on both sides of a decomposition liquid receiving tray, and a cooling mechanism is provided in the decomposing liquid receiving tray. This is a semiconductor thin film decomposition device that shortens the decomposition time of hydrofluoric acid, increases the amount of decomposition liquid, and prevents re-evaporation of the decomposition liquid to improve analysis accuracy. [Embodiments of the Invention] Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention. In the figure, 20 is a closed container whose upper opening is closed with a lid 21. A rotary blade 22 is provided on the inner wall surface of the lid body 21 facing the inside of the closed container 20. The rotating blade 22 is connected to the lid body 21
It is designed to be rotated by a motor 23 attached to the outer surface of. A carrier support wall 24 protrudes from the floor of the closed container 20 so as to face the rotating blades 22 . A semiconductor thin film 25 is disposed on the carrier support wall 24.
A wafer carrier 26 carrying a plurality of wafers 34 formed thereon is installed. A decomposition liquid receiving tray 27 is installed on the floor surrounded by the carrier support wall 24. A cooler 28 is attached to the back side of the floor of the closed container 20 corresponding to the installation location of the decomposition liquid receiving tray 27. Cooler 28
An inlet 30 and an outlet 31 for the cooling water 29 are formed therein. Carrier support wall 24 and closed container 2
A hydrofluoric acid storage tank 32 containing ultra-high purity hydrofluoric acid 35 is provided on both sides of the decomposition liquid receiving tray 27 sandwiched between the inner wall surfaces of the hydrofluoric acid storage tank 32 . Further, a heater 33 is attached to the back side of the closed container 20 corresponding to the hydrofluoric acid storage tank 32. Semiconductor thin film decomposition device 4 configured in this way
According to No. 0, metal impurities in the semiconductor thin film 25 are analyzed as follows. First, semiconductor thin film 2
The wafer 34 on which 5 is formed is mounted on the wafer carrier 26, and placed on the carrier support wall 24 in the closed container 20. Next, hydrofluoric acid storage tank 3
After filling the container 2 with ultra-high purity hydrofluoric acid 35, the opening of the closed container 20 is closed with a lid 21. After that,
The rotary vane 22 is rotated by the motor 23 at a predetermined rotation speed, the hydrofluoric acid 35 is heated to a predetermined temperature by the heating heater 33, and the decomposition liquid receiving tray 27 into which the cooling water 29 has flowed into the cooler 28 is heated to a predetermined temperature. Allow to cool to temperature and leave for a specified period of time. Next, the decomposition liquid 37 of the semiconductor thin film 25 decomposed by the vapor 36 of the hydrofluoric acid 35 generated in large quantities during this standing time is collected from the decomposition liquid receiving tray 27 with a micropipette.
After stirring and weighing, the metal impurities are analyzed directly using a flameless atomic absorption spectrometer. In this way, in this semiconductor thin film decomposition apparatus 40 , since the heating heater 33 is provided, hydrofluoric acid 3
The amount of vapor can be increased by increasing the evaporation rate of 5. The increase in the amount of vapor of hydrofluoric acid 35 is further facilitated by providing hydrofluoric acid storage tanks 32 on both sides of carrier support wall 24. The generated vapor 36 of hydrofluoric acid 35 is uniformly and effectively diffused into the interior of the closed container 20 by the rotation of the rotary blades 22. As a result, the semiconductor thin film 25 is decomposed in an extremely short decomposition time by the vapor 36 of the hydrofluoric acid 35 generated in large quantities. Furthermore, since the decomposition liquid receiving tray 27 is sufficiently cooled by the cooler 28, it is possible to prevent the decomposition liquid 37 once stored from re-evaporating and mixing into other decomposition liquids 37. As a result, the accuracy of metal impurity analysis can be significantly improved. Incidentally, in the semiconductor thin film decomposition apparatus 40 of the embodiment, when the space volume in the closed container 20 is about 16000 cm 3 and the thickness of the semiconductor thin film 25 is 10000 Å, the decomposition time of the semiconductor thin film 25 is determined by the thermal oxidation type. In the case of SiO 2 film, it took 40 minutes with conventional equipment.
I was able to shorten it to 15 minutes. In addition, when the type of membrane is low pressure CVD-Si 3 N 4 membrane, conventional equipment cannot
The decomposition time, which used to take 120 minutes, was reduced to 60 minutes. Further, the amount of recovered decomposition liquid 37 was 80 to 100 .mu. per 400 .ANG. thickness of semiconductor thin film 25 in the apparatus of the embodiment, whereas it was 20 to 30 .mu. in the conventional apparatus. [Effects of the Invention] As explained above, the semiconductor thin film decomposition apparatus according to the present invention can shorten the decomposition time of hydrofluoric acid, increase the amount of decomposition liquid, and reduce re-evaporation of the decomposition liquid. This can be prevented and the accuracy of analysis can be improved.
第１図は、本発明の一実施例の概略構成を示す
説明図、第２図は、従来の半導体薄膜の分解装置
の概略構成を示す説明図である。
２０……密閉容器、２１……蓋体、２２……回
転羽、２３……モータ、２４……キヤリア支持
壁、２５……半導体薄膜、２６……ウエハキヤリ
ア、２７……分解液受皿、２８……冷却器、２９
……冷却水、３０……流入口、３１……流出口、
３２……弗化水素酸貯蔵槽、３３……加熱用ヒー
タ、４０……半導体薄膜の分解装置、３４……ウ
エハ、３５……弗化水素酸、３６……蒸気、３７
……分解液。
FIG. 1 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention, and FIG. 2 is an explanatory diagram showing a schematic configuration of a conventional semiconductor thin film decomposition apparatus. 20... Airtight container, 21... Lid, 22... Rotating blade, 23... Motor, 24... Carrier support wall, 25... Semiconductor thin film, 26... Wafer carrier, 27... Decomposition liquid receiver, 28 ...Cooler, 29
...cooling water, 30...inlet, 31...outlet,
32...Hydrofluoric acid storage tank, 33...Heating heater, 40 ...Semiconductor thin film decomposition device, 34...Wafer, 35...Hydrofluoric acid, 36...Steam, 37
...Decomposition liquid.
Claims (1)
と、該密閉容器内の床部に形成されたキヤリア支
持壁と、該キヤリア支持壁上に載置され半導体薄
膜を形成したウエハを保持したキヤリアと、前記
ウエハの直下の前記床部に設置された分解液受皿
と、該分解液受皿に対応して前記床部の外壁面側
に取付けられた冷却器と、前記分解液受皿の両側
部の前記キヤリア支持壁と前記密閉容器の内壁と
の間に設置された弗化水素酸貯蔵槽と、該弗化水
素酸貯蔵槽に対応して前記床部の外壁面側に取付
けられた加熱用ヒータと、前記密閉容器内に回転
自在に設けられた回転羽とを具備することを特徴
とする半導体薄膜の分解装置。1. An airtight container whose opening is closed with a lid that can be opened and closed, a carrier support wall formed on the floor within the airtight container, and a wafer placed on the carrier support wall on which a semiconductor thin film is formed. a carrier, a decomposition liquid receiver installed on the floor directly below the wafer, a cooler attached to the outer wall side of the floor corresponding to the decomposition liquid receiver, and both sides of the decomposition liquid receiver. a hydrofluoric acid storage tank installed between the carrier support wall and the inner wall of the sealed container; and a heating device installed on the outer wall side of the floor corresponding to the hydrofluoric acid storage tank. 1. A semiconductor thin film decomposition apparatus, comprising: a heater; and a rotary blade rotatably provided within the closed container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59218101A JPS6196736A (en) | 1984-10-17 | 1984-10-17 | Decomposing device of semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59218101A JPS6196736A (en) | 1984-10-17 | 1984-10-17 | Decomposing device of semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6196736A JPS6196736A (en) | 1986-05-15 |
| JPH0330981B2 true JPH0330981B2 (en) | 1991-05-01 |
Family
ID=16714646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59218101A Granted JPS6196736A (en) | 1984-10-17 | 1984-10-17 | Decomposing device of semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6196736A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2909086B2 (en) * | 1989-01-20 | 1999-06-23 | 株式会社東芝 | Method and apparatus for collecting impurities on semiconductor substrate surface |
| JP4769439B2 (en) * | 2004-08-18 | 2011-09-07 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Processing equipment |
| JP4769440B2 (en) * | 2004-08-18 | 2011-09-07 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Processing equipment |
| JP4516379B2 (en) * | 2004-08-18 | 2010-08-04 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Processing equipment |
-
1984
- 1984-10-17 JP JP59218101A patent/JPS6196736A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6196736A (en) | 1986-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Oishi et al. | Self‐diffusion of oxygen in single crystal and polycrystalline aluminum oxide | |
| Buttner et al. | Adsorption of oxygen on silver | |
| Fawcett | The surface resistance of normal and superconducting tin at 36 kMc/s | |
| US4584886A (en) | Resolution device for semiconductor thin films | |
| JPH0330981B2 (en) | ||
| Friis et al. | Magnesium: Comparison of density functional theory calculations with electron and x-ray diffraction experiments | |
| Chieux et al. | Deuterated liquid ammonia and lithium. ammonia-d3 (7Li. 4ND3) solution. A neutron scattering investigation | |
| Boroch et al. | An X-Ray investigation of the phase relationships in the system LaH2 LaH3 | |
| Quist et al. | Ice VIII—AN Acetone Hydrate? | |
| Osborne et al. | Heat Capacity and Other Thermodynamic Properties of MoF6 between 4 and 350 K | |
| Bergner et al. | Diffusion of foreign elements in aluminum solid solutions. Pt. 3. Investigations into the diffusion of silicon in aluminum using the microprobe | |
| Daunt et al. | XXVII. Absorption of infra-red light in supraconductors | |
| Addison et al. | 19. Liquid metals. Part X. Solutions of hydrogen in liquid sodium | |
| Holleck et al. | The Activity Coefficient of Lithium Chloride in Anhydrous Dimethyl Sulfoxide Solutions | |
| Lamprecht et al. | Solubility of metals in liquid sodium. II. The system sodium-lead | |
| JPH0566727B2 (en) | ||
| Sakurai et al. | Microwave study of the mechanism of n-butene isomerization over p-toluene sulphonic acid | |
| Mousa et al. | NMR investigations of cation diffusion in some solids with antifluorite structure | |
| JPS61144545A (en) | Device for dissolving thin film or thin sheet | |
| JPH0543289B2 (en) | ||
| Ito | Rotational correlation times of a nitroxide spin probe in low temperature matrices determined by saturation transfer ESR: their correlation to dynamic behavior of radiation products | |
| JPS6247551A (en) | Method and device for decomposition thin film of semiconductor substrate | |
| Addison et al. | Reaction of nitrogen with stirred and unstirred liquid lithium | |
| Hightower Jr et al. | LOW-PRESSURE DISTILLATION OF A PORTION OF THE FUEL CARRIER SALT FROM THE MOLTEN SALT REACTOR EXPERIMENT. | |
| Powers et al. | Thermal Conductivity of Condensed Gases. III. The Thermal Conductivity of Liquid Deuterium from 19 to 29° K. |