JPH0566727B2 - - Google Patents
Info
- Publication number
- JPH0566727B2 JPH0566727B2 JP59018464A JP1846484A JPH0566727B2 JP H0566727 B2 JPH0566727 B2 JP H0566727B2 JP 59018464 A JP59018464 A JP 59018464A JP 1846484 A JP1846484 A JP 1846484A JP H0566727 B2 JPH0566727 B2 JP H0566727B2
- Authority
- JP
- Japan
- Prior art keywords
- decomposition
- semiconductor thin
- thin film
- liquid
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
Landscapes
- Weting (AREA)
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体薄膜の分解装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to an apparatus for decomposing semiconductor thin films.
半導体装置を構成するSiO2膜やSi3N4膜等の半
導体薄膜中に、Na、Ｋ、Fe等の不純物が存在す
ると、その量が超微量のものであつても、素子の
電気特性に大きな影響を与える。従つて、素子特
性を向上させるためには、半導体薄膜中のこのよ
うな不純物の含有量を極力抑える必要がある。而
して、半導体薄膜中の不純物の量を知るために、
従来、第１図に示すような半導体薄膜の分解装置
が使用されている。図中１は、密閉容器である。
密閉容器１内には、作用液２である超高純度の弗
化水素酸を収容した容器３が設定されている。ま
た、密閉容器１内には、複数枚のウエハ４を垂下
した状態で保持したウエハキヤリア５が設置され
ている。ウエハ４の表面には、半導体薄膜６が形
成されている。ウエハ４の直下には、各々のウエ
ハ４に対応して仕切板で隔壁した分解液受皿７が
設置されている。分解液受皿７は、キヤリア保持
台８によつて固定されている。
If impurities such as Na , K, Fe , etc. are present in semiconductor thin films such as SiO 2 films and Si 3 N 4 films that make up semiconductor devices, even if the amount is extremely small, the electricity of the device will be affected. Significantly affects characteristics. Therefore, in order to improve device characteristics, it is necessary to suppress the content of such impurities in the semiconductor thin film as much as possible. Therefore, in order to know the amount of impurities in the semiconductor thin film,
Conventionally, an apparatus for decomposing semiconductor thin films as shown in FIG. 1 has been used. In the figure, 1 is a closed container.
A container 3 containing ultra-high purity hydrofluoric acid as a working fluid 2 is set inside the closed container 1 . Further, a wafer carrier 5 holding a plurality of wafers 4 in a suspended state is installed in the closed container 1. A semiconductor thin film 6 is formed on the surface of the wafer 4. Immediately below the wafers 4, a decomposition liquid receiving tray 7 is installed corresponding to each wafer 4 and partitioned by a partition plate. The decomposition liquid receiving tray 7 is fixed by a carrier holding stand 8.
而して、ウエハ４をウエハキヤリア５に設定し
て密閉容器１内で常温で所定時間放置すると、作
用液２の蒸気９が半導体薄膜６の表面に接触し、
半導体薄膜６は分解する。得られた分解液１０
は、半導体薄膜６の表面を伝つて落下し、分解液
受皿７内に溜る。このようにして得た分解液１０
を回収し、撹拌、計量した後、フレームレス原子
吸光分析装置にかけて不純物の定性、定量を行
う。 When the wafer 4 is set in the wafer carrier 5 and left in the closed container 1 at room temperature for a predetermined period of time, the vapor 9 of the working liquid 2 comes into contact with the surface of the semiconductor thin film 6.
The semiconductor thin film 6 decomposes. Obtained decomposition liquid 10
falls along the surface of the semiconductor thin film 6 and accumulates in the decomposition liquid receiving tray 7. Decomposed liquid 10 obtained in this way
After collecting, stirring and weighing, the impurities are qualitatively and quantitatively determined using a flameless atomic absorption spectrometer.
〔背景技術の問題点〕
このような半導体薄膜の分析装置では、作用液
２の蒸発は常温で起きるため、半導体薄膜６の分
解に長時間を要する。このため、一旦、分解液受
皿７に溜つた分解液１０が再蒸発し、仕切板を越
えて他の分解液１０中に混入したり、或は再蒸発
によつて分解液１０中の不純物の濃度に変化を起
こす。その結果、分析精度が低下する問題があつ
た。[Problems with Background Art] In such a semiconductor thin film analyzer, since the working liquid 2 evaporates at room temperature, it takes a long time to decompose the semiconductor thin film 6. Therefore, the decomposition liquid 10 that has accumulated in the decomposition liquid receiving tray 7 may re-evaporate and cross the partition plate and mix into other decomposition liquids 10, or impurities in the decomposition liquid 10 may be removed by re-evaporation. Causes a change in concentration. As a result, there was a problem in which the accuracy of analysis decreased.
本発明は、半導体薄膜の分解時間を短縮し、か
つ、分解液の再蒸発を防止して分析精度の向上を
達成した半導体薄膜の分解装置を提供することを
その目的とするものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor thin film decomposition apparatus that reduces the decomposition time of semiconductor thin films, prevents re-evaporation of decomposition liquid, and improves analysis accuracy.
本発明は、作用液を収容した容器に加熱ヒータ
を取付けて作用液の蒸発速度を速めることによ
り、半導体薄膜の分解時間を短縮し、かつ、分解
液受容器の周囲に冷却液を供給することにより、
分解液の再蒸発を防止して、分析精度の向上を達
成した半導体薄膜の分析装置である。
The present invention shortens the decomposition time of a semiconductor thin film by attaching a heater to a container containing a working liquid to increase the evaporation rate of the working liquid, and also supplies a cooling liquid around a decomposition liquid receiver. According to
This is a semiconductor thin film analysis device that prevents re-evaporation of the decomposed liquid and improves analysis accuracy.
以下、本発明の実施例について図面を参照して
説明する。
Embodiments of the present invention will be described below with reference to the drawings.
第２図は、本発明の一実施例の概略構成を示す
説明図である。図中２０は、密閉容器である。密
閉容器２０内には、作用液２１である超高純度の
弗化水素酸を収容した容器２２が設置されてい
る。この容器２２の外周部分には、弗素をコーテ
イングした加熱ヒータ２３が装着されている。ま
た、密閉容器２０内には、複数枚のウエハ２４を
垂下した状態で保持したウエハキヤリヤ２５が設
置されている。ウエハ２４の表面には、半導体薄
膜２６が形成されている。ウエハ２４の直下に
は、各々のウエハ２４に対応して仕切板２７で隔
壁した分解液受容器２８が設置されている。分解
液受容器２８は、キヤリア保持台２９にて固定さ
れている。キヤリア保持台２９の外周部分には、
密閉容器２０を外部から貫挿した冷却液供給管３
０が装着されている。冷却液供給管３０は、図示
しない冷却液、例えば純水の供給源に接続されて
いる。冷却液は、純水に限らず、又、冷却気体も
場合により使用可能である。そして冷却温度も数
℃〜常温程度が望ましい。 FIG. 2 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention. In the figure, 20 is a closed container. Inside the closed container 20, a container 22 containing ultra-high purity hydrofluoric acid, which is a working liquid 21, is installed. A heater 23 coated with fluorine is attached to the outer circumference of the container 22. Further, a wafer carrier 25 holding a plurality of wafers 24 in a hanging state is installed in the closed container 20. A semiconductor thin film 26 is formed on the surface of the wafer 24. Immediately below the wafers 24, decomposition liquid receivers 28 partitioned by partition plates 27 are installed corresponding to each wafer 24. The decomposition liquid receiver 28 is fixed on a carrier holding stand 29. On the outer periphery of the carrier holding base 29,
Cooling liquid supply pipe 3 that penetrates the closed container 20 from the outside
0 is attached. The coolant supply pipe 30 is connected to a supply source of a coolant (not shown), such as pure water. The cooling liquid is not limited to pure water, and cooling gas may also be used depending on the case. The cooling temperature is also desirably from several degrees centigrade to room temperature.
而して、このように構成された半導体薄膜の分
解装置３５によれば、ウエハ２４をウエハキヤリ
ア２５に設定して密閉容器２０内に所定時間放置
する。このとき、作用液２１を収容した容器２２
は、加熱ヒータ２３によつて約40〜50℃に加熱す
るのが最も好ましい。このため、極めて多量の弗
化水素酸が蒸発し、この蒸気３２によつて半導体
薄膜２６は、速い速度で完全に分解される。これ
によつて得られた分解液３２は、半導体薄膜２６
の表面を伝つて分解液受皿２８内に落し溜る。こ
のとき、分解液受皿２８は、冷却液供給管３０を
流れる冷却液によつて十分に冷却されている。こ
のため、一度分解液受皿２８に溜つた分解液３２
の再蒸発を抑制することができる。然る後、分解
液受皿２８から分解液３２を回収し、撹拌、計量
してフレームレス原子吸光分析装置にて不純物の
定性、定量を行う。このように、作用液２１は十
分に加熱して多量に蒸発するため、分解液３２の
生成時間を著しく短縮することができる。しか
も、冷却作用によつて分解液３２の再蒸発を抑制
できるので、分析精度を高めることができる。因
みに、本発明の効果を確認するために、膜厚が
400Åの半導体薄膜２６，６から分解液３２，１
０を同じ条件で回収したところ、実施例の装置で
は、50〜70μの分解液３２を回収できたが、従
来の装置では20〜30μしか回収できないことが
判つた。 According to the semiconductor thin film decomposition apparatus 35 configured as described above, the wafer 24 is set in the wafer carrier 25 and left in the closed container 20 for a predetermined period of time. At this time, the container 22 containing the working liquid 21
is most preferably heated to about 40 to 50°C by the heater 23. Therefore, an extremely large amount of hydrofluoric acid evaporates, and the semiconductor thin film 26 is completely decomposed at a high rate by this vapor 32. The decomposition liquid 32 obtained in this way is
The decomposition liquid flows along the surface of the decomposition liquid and collects in the decomposition liquid receiving tray 28. At this time, the decomposition liquid receiving tray 28 is sufficiently cooled by the cooling liquid flowing through the cooling liquid supply pipe 30. For this reason, once the decomposition liquid 32 accumulated in the decomposition liquid receiver 28
re-evaporation can be suppressed. Thereafter, the decomposed liquid 32 is collected from the decomposed liquid receiver 28, stirred and weighed, and impurities are qualitatively and quantitatively determined using a flameless atomic absorption spectrometer. In this way, since the working liquid 21 is sufficiently heated and evaporated in large quantities, the time for producing the decomposition liquid 32 can be significantly shortened. Furthermore, re-evaporation of the decomposition liquid 32 can be suppressed by the cooling effect, so that analysis accuracy can be improved. Incidentally, in order to confirm the effect of the present invention, the film thickness was
Decomposition liquid 32,1 from 400 Å semiconductor thin film 26,6
When 0 was recovered under the same conditions, it was found that the device of the example was able to recover 50 to 70 microns of the decomposed liquid 32, but the conventional device could only recover 20 to 30 microns.
また、作用液２１，２として50％の弗化水素酸
100mlを使用し、密閉容器２０，１の空間体積を
約1600cm3、半導体薄膜２６，６の膜厚を10000Å
としたときの分解時間を調べたところ、実施例の
装置では、半導体薄膜２６が熱酸化SiO2膜の場
合第３図に特性線にて示す結果が得れた。しか
し、従来の装置では同図に特性線にて示す結果
を得た。これらの特性線，から明らかなよう
に実施例の装置では、従来の装置に比べて31分か
ら20分と分解時間を短縮できることが判つた。同
様にLPCVD（Low Pressure Chemical Vapor
Deposition）−Si3N4膜が半導体薄膜２６，６で
ある場合について調べたところ、実施例の装置で
は同図に特性線にて示す結果が得られ、従来の
装置では特性線にて示す結果が得られた。これ
らの特性線，から明らかなように、実施例の
装置では従来の装置に比べて108分から80分と分
解時間を短縮できることが判つた。 In addition, 50% hydrofluoric acid is used as the working liquid 21,2.
Using 100 ml, the space volume of the sealed container 20, 1 is approximately 1600 cm 3 , and the thickness of the semiconductor thin film 26, 6 is 10000 Å.
When the decomposition time was investigated, in the apparatus of the example, the results shown by the characteristic line in FIG. 3 were obtained when the semiconductor thin film 26 was a thermally oxidized SiO 2 film. However, with the conventional device, the results shown by the characteristic line in the same figure were obtained. As is clear from these characteristic lines, it was found that the apparatus of the example could shorten the decomposition time from 31 minutes to 20 minutes compared to the conventional apparatus. Similarly, LPCVD (Low Pressure Chemical Vapor)
When we investigated the case where the Si 3 N 4 film is the semiconductor thin film 26, 6, the device of the example obtained the results shown by the characteristic line in the figure, and the conventional device obtained the results shown by the characteristic line. was gotten. As is clear from these characteristic lines, it was found that the apparatus of the example could shorten the decomposition time from 108 minutes to 80 minutes compared to the conventional apparatus.
以上説明した如く、本発明に係る半導体薄膜の
分解装置によれば、半導体薄膜の分解時間を短縮
し、かつ、分解液の再蒸発を防止して、分析精度
を向上させることができるものである。
As explained above, according to the semiconductor thin film decomposition apparatus according to the present invention, it is possible to shorten the decomposition time of the semiconductor thin film, prevent re-evaporation of the decomposition liquid, and improve analysis accuracy. .
第１図は、従来の半導体薄膜の解析装置の概略
構成を示す説明図、第２図は、本発明の一実施例
の概略構成を示す説明図、第３図は、分解所要時
間と半導体薄の厚さとの関係を示す説明図であ
る。
２０……密閉容器、２１……作用液、２２……
容器、２３……加熱ヒータ、２４……ウエハ、２
５……ウエハキヤリア、２６……半導体薄膜、２
７……仕切板、２８……分解液受容器、２９……
キヤリア保持台、３０……冷却液供給管、３１…
…蒸気、３２……分解液、３５……半導体薄膜の
分解装置。
FIG. 1 is an explanatory diagram showing a schematic configuration of a conventional semiconductor thin film analysis apparatus, FIG. 2 is an explanatory diagram showing a schematic configuration of an embodiment of the present invention, and FIG. It is an explanatory view showing the relationship between the thickness of 20... Airtight container, 21... Working liquid, 22...
Container, 23... Heater, 24... Wafer, 2
5...Wafer carrier, 26...Semiconductor thin film, 2
7... Partition plate, 28... Decomposition liquid receiver, 29...
Carrier holding stand, 30...Cooling liquid supply pipe, 31...
...Steam, 32...Decomposition liquid, 35 ...Semiconductor thin film decomposition device.
Claims (1)
で保持するウエハキヤリアを収容した密閉容器
と、前記ウエハの直下に開口部を対向するように
して該密閉容器内に設置された分解液受容器と、
該分解液受容器の周囲に取付けられた冷却材供給
管と、前記密閉容器内に設置された一端を開口し
た作用液収容容器と、該作用液収容容器に取付け
られた加熱ヒータとを具備することを特徴とする
半導体薄膜の分解装置。1. An airtight container containing a wafer carrier that hangs a wafer on which a semiconductor thin film has been formed, and a decomposition liquid receiver installed in the airtight container with an opening facing directly below the wafer;
A coolant supply pipe attached around the decomposition liquid receiver, a working liquid storage container with one end open installed in the closed container, and a heater attached to the working liquid storage container. A semiconductor thin film decomposition device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59018464A JPS60164330A (en) | 1984-02-06 | 1984-02-06 | Device for decomposition of semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59018464A JPS60164330A (en) | 1984-02-06 | 1984-02-06 | Device for decomposition of semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60164330A JPS60164330A (en) | 1985-08-27 |
| JPH0566727B2 true JPH0566727B2 (en) | 1993-09-22 |
Family
ID=11972354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59018464A Granted JPS60164330A (en) | 1984-02-06 | 1984-02-06 | Device for decomposition of semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60164330A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5395482A (en) * | 1992-11-13 | 1995-03-07 | Fuji Photo Film Co., Ltd. | Ultra high purity vapor phase treatment |
| JP4769439B2 (en) * | 2004-08-18 | 2011-09-07 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Processing equipment |
-
1984
- 1984-02-06 JP JP59018464A patent/JPS60164330A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60164330A (en) | 1985-08-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |