JPH0338746B2 - - Google Patents
Info
- Publication number
- JPH0338746B2 JPH0338746B2 JP59071655A JP7165584A JPH0338746B2 JP H0338746 B2 JPH0338746 B2 JP H0338746B2 JP 59071655 A JP59071655 A JP 59071655A JP 7165584 A JP7165584 A JP 7165584A JP H0338746 B2 JPH0338746 B2 JP H0338746B2
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- groove
- power element
- power transistor
- hybrid integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/073—Connecting or disconnecting of die-attach connectors
- H10W72/07331—Connecting techniques
- H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/30—Die-attach connectors
- H10W72/351—Materials of die-attach connectors
- H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
- H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
- H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
- H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明はヒートシンクの製造方法、特に混成集
積回路等に用いるヒートシンクの製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (A) Field of Industrial Application The present invention relates to a method for manufacturing a heat sink, and particularly to a method for manufacturing a heat sink used for hybrid integrated circuits and the like.
(ロ) 従来技術
従来の混成集積回路は第1図に示す如く、セラ
ミツクスあるいは表面を陽極酸化したアルミニウ
ム等の絶縁基板1と、該基板1上に任意の形状に
設けた導電路2と、該導電路2上に半田で固着さ
れたヒートシンク3と、ヒートシンク3に固着さ
れたパワートランジスタ4と、パワートランジス
タ4を被覆保護する封止樹脂層5と、基板1の周
端に接着シート6で接着され全体を覆う蓋体7と
で構成されていた。(b) Prior Art As shown in FIG. 1, a conventional hybrid integrated circuit includes an insulating substrate 1 made of ceramics or aluminum whose surface is anodized, a conductive path 2 provided in an arbitrary shape on the substrate 1, and a conductive path 2 provided in an arbitrary shape on the substrate 1. A heat sink 3 fixed on the conductive path 2 with solder, a power transistor 4 fixed on the heat sink 3, a sealing resin layer 5 covering and protecting the power transistor 4, and bonded to the peripheral edge of the substrate 1 with an adhesive sheet 6. and a lid body 7 that covers the entire body.
斯る構造の混成集積回路はテレビ、ラジオ、ス
テレア等の比較的良好な使用環境を有する電子機
器では十分な封止と評価されていた。しかしなが
ら自動車の電装部品等の如く極めて使用環境の悪
いものにおいては十分な封止構造とは言えず、特
に電力を消費するパワートランジスタの劣化が極
めて問題となつていた。即ちヒートサイクルの結
果、封止樹脂層5にクラツクが発生し、クラツク
から入る酸素により半田酸化が起こり、パワート
ランジスタ4とヒートシンク3との熱抵抗が増大
してパワートランジスタ4が二次破壊されるので
ある。 Hybrid integrated circuits having such a structure have been evaluated as being sufficiently sealed in electronic equipment such as televisions, radios, stereophonic devices, etc. that have a relatively favorable usage environment. However, it cannot be said that the sealing structure is sufficient for items such as electrical components of automobiles, which are used in extremely poor environments, and deterioration of power transistors, which consume electric power, has become a serious problem. That is, as a result of the heat cycle, cracks occur in the sealing resin layer 5, solder oxidation occurs due to oxygen entering through the cracks, and the thermal resistance between the power transistor 4 and the heat sink 3 increases, resulting in secondary destruction of the power transistor 4. It is.
(ハ) 発明の目的
本発明は斯点に鑑みてなされ、混成集積回路に
組み込むパワートランジスタの良好な封止構造を
実現するヒートシンクの簡便な製造方法を提供す
ることを目的とする。(c) Object of the Invention The present invention was made in view of the above, and an object of the present invention is to provide a simple method for manufacturing a heat sink that realizes a good sealing structure for a power transistor incorporated into a hybrid integrated circuit.
(ニ) 発明の構成
本発明に依れば、平板上のヒートシンク上面に
溝を形成し、該溝の内側端部に近接してV溝をプ
レスして逆テーパー面を形成する様に構成されて
いる。(D) Structure of the Invention According to the present invention, a groove is formed on the upper surface of the heat sink on a flat plate, and a V-groove is pressed close to the inner end of the groove to form an inverted tapered surface. ing.
(ホ) 実施例
本実施例に依れば第2図Aの如く、13mm角で厚
さ3mmの銅片より成る平板状のヒートシンク13
を準備する。ヒートシンク13の上面には第2図
Bの如く、周辺に連続してあるいは不連続して溝
19をプレスにより形成する。溝19は巾500μ
m、深さ300μm程度の逆台形状に形成される。
続いて第2図Cの如く溝19の内側端部に近接し
てV溝20をプレス形成する。このV溝20の形
成に伴い溝19の内側斜面は外側に押し出されて
逆テーパー面18を容易に形成できる。(E) Embodiment According to this embodiment, as shown in FIG. 2A, a flat heat sink 13 made of a 13 mm square and 3 mm thick copper piece is used.
Prepare. As shown in FIG. 2B, on the upper surface of the heat sink 13, grooves 19 are formed continuously or discontinuously around the periphery by pressing. Groove 19 has a width of 500μ
It is formed in an inverted trapezoid shape with a depth of about 300 μm.
Subsequently, as shown in FIG. 2C, a V-groove 20 is press-formed close to the inner end of the groove 19. With the formation of the V-groove 20, the inner slope of the groove 19 is pushed outward, and the reverse tapered surface 18 can be easily formed.
なお逆テーパー面18は溝19の内側斜面でも
外側斜面でも形成して良い。 Note that the reverse tapered surface 18 may be formed on either the inner slope or the outer slope of the groove 19.
斯上した本発明に依るヒートシンク13は第3
図に示す如く、混成集積回路に組み込まれる。混
成集積回路はセラミツクスあるいは表面を陽極酸
化したアルミニウム等の絶縁基板11と、該基板
11上に任意の形状に設けた銅箔より成る導電路
12と、導電路12上に半田で固着されたヒート
シンク13と、ヒートシンク13上に固着したパ
ワートランジスタ14と、本考案の特徴とする溝
19と、パワートランジスタ14を被覆する封止
樹脂層15より構成されている。 The heat sink 13 according to the present invention described above is the third heat sink 13 according to the present invention.
As shown in the figure, it is incorporated into a hybrid integrated circuit. The hybrid integrated circuit includes an insulating substrate 11 made of ceramics or aluminum whose surface is anodized, a conductive path 12 made of copper foil provided in an arbitrary shape on the substrate 11, and a heat sink fixed on the conductive path 12 with solder. 13, a power transistor 14 fixed on the heat sink 13, a groove 19 which is a feature of the present invention, and a sealing resin layer 15 covering the power transistor 14.
パワートランジスタ14はヒートシンク13の
溝19の内側に半田で固着され、エポキシ樹脂等
の封止樹脂層15を塗布してパワートランジスタ
14を被覆して保護する。この際封止樹脂層15
は溝19内にも充填される。その結果、ヒートシ
ンク13に溝19に逆テーパー面が形成されてい
るためにヒートサイクルによつて封止樹脂層に応
力が加わつたとしても逆テーパー面がもどり形状
になつているために封止樹脂層の剥離を防止する
ことができる。 The power transistor 14 is fixed to the inside of the groove 19 of the heat sink 13 with solder, and a sealing resin layer 15 such as epoxy resin is applied to cover and protect the power transistor 14. At this time, the sealing resin layer 15
is also filled in the groove 19. As a result, since the groove 19 of the heat sink 13 has an inverted tapered surface, even if stress is applied to the sealing resin layer due to heat cycles, the inverted tapered surface returns to its shape, so the sealing resin Peeling of layers can be prevented.
(ヘ) 発明の効果
本発明に依ればヒートシンク13に逆テーパー
面18を容易に形成できる利点を有する。そして
混成集積回路に組み込めばヒートサイクルに強い
パワートランジスタ14の封止構造を実現でき
る。(F) Effects of the Invention According to the present invention, there is an advantage that the reverse tapered surface 18 can be easily formed on the heat sink 13. If it is incorporated into a hybrid integrated circuit, a sealed structure for the power transistor 14 that is resistant to heat cycles can be realized.
第1図は従来の混成集積回路を説明する断面
図、第2図A,B,Cは本発明のヒートシンクの
製造方法を説明する断面図、第3図は本発明のヒ
ートシンクを用いた混成集積回路を説明する断面
図である。
主な図番の説明、13はヒートシンク、19は
溝、18は逆テーパー面、20はV溝である。
FIG. 1 is a cross-sectional view explaining a conventional hybrid integrated circuit, FIGS. 2 A, B, and C are cross-sectional views explaining the method of manufacturing the heat sink of the present invention, and FIG. 3 is a cross-sectional view of a hybrid integrated circuit using the heat sink of the present invention. FIG. 2 is a cross-sectional view illustrating a circuit. Explanation of the main figure numbers: 13 is a heat sink, 19 is a groove, 18 is a reverse tapered surface, and 20 is a V groove.
Claims (1)
ー素子を封止する封止樹脂がその上面に配置され
る平板状のヒートシンクの製造方法において、 前記平板状のヒートシンク上に前記パワー素子
が固着される周辺近傍に、前記パワー素子を取り
囲むように溝を形成し、 前記パワー素子を取り囲む前記溝の内側端部に
近接してV溝を設けて逆テーパー面を形成するこ
とを特徴とするヒートシンクの製造方法。[Scope of Claims] 1. A method for manufacturing a flat heat sink in which only a power element is fixed, and a sealing resin for sealing the power element is placed on the top surface, comprising: A groove is formed near the periphery to which the power element is fixed so as to surround the power element, and a V-groove is provided close to the inner end of the groove surrounding the power element to form a reverse tapered surface. Characteristic heat sink manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59071655A JPS6065539A (en) | 1984-04-10 | 1984-04-10 | Manufacture of heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59071655A JPS6065539A (en) | 1984-04-10 | 1984-04-10 | Manufacture of heat sink |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6065539A JPS6065539A (en) | 1985-04-15 |
| JPH0338746B2 true JPH0338746B2 (en) | 1991-06-11 |
Family
ID=13466838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59071655A Granted JPS6065539A (en) | 1984-04-10 | 1984-04-10 | Manufacture of heat sink |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6065539A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54128279A (en) * | 1978-03-29 | 1979-10-04 | Hitachi Ltd | Heat sink for resin-sealed semiconductor device and its manufacture |
-
1984
- 1984-04-10 JP JP59071655A patent/JPS6065539A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6065539A (en) | 1985-04-15 |
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