JPH0341404B2 - - Google Patents
Info
- Publication number
- JPH0341404B2 JPH0341404B2 JP16833483A JP16833483A JPH0341404B2 JP H0341404 B2 JPH0341404 B2 JP H0341404B2 JP 16833483 A JP16833483 A JP 16833483A JP 16833483 A JP16833483 A JP 16833483A JP H0341404 B2 JPH0341404 B2 JP H0341404B2
- Authority
- JP
- Japan
- Prior art keywords
- monosilane
- mol
- compound
- sih
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 150000002902 organometallic compounds Chemical class 0.000 claims description 13
- 150000004756 silanes Chemical class 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 150000003839 salts Chemical group 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 150000002430 hydrocarbons Chemical group 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 125000001477 organic nitrogen group Chemical group 0.000 claims description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 9
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 9
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000003456 ion exchange resin Substances 0.000 description 4
- 229920003303 ion-exchange polymer Polymers 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 4
- 239000005052 trichlorosilane Substances 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229920005990 polystyrene resin Polymers 0.000 description 3
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- CHRJZRDFSQHIFI-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;styrene Chemical compound C=CC1=CC=CC=C1.C=CC1=CC=CC=C1C=C CHRJZRDFSQHIFI-UHFFFAOYSA-N 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- 229910010082 LiAlH Inorganic materials 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 101150003085 Pdcl gene Proteins 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003957 anion exchange resin Substances 0.000 description 2
- VQPFDLRNOCQMSN-UHFFFAOYSA-N bromosilane Chemical compound Br[SiH3] VQPFDLRNOCQMSN-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000005292 vacuum distillation Methods 0.000 description 2
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 1
- IZSHZLKNFQAAKX-UHFFFAOYSA-N 5-cyclopenta-2,4-dien-1-ylcyclopenta-1,3-diene Chemical group C1=CC=CC1C1C=CC=C1 IZSHZLKNFQAAKX-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- -1 biscyclooctadiene Chemical class 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 229920001429 chelating resin Polymers 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical group CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 229910021338 magnesium silicide Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000002897 organic nitrogen compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- RCIBIGQXGCBBCT-UHFFFAOYSA-N phenyl isocyanide Chemical compound [C-]#[N+]C1=CC=CC=C1 RCIBIGQXGCBBCT-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002717 polyvinylpyridine Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000001302 tertiary amino group Chemical group 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Catalysts (AREA)
Description
【発明の詳細な説明】
本発明はハロゲンシランから低ハロゲンシラン
またはモノシランを製造する方法に関し、詳しく
はハロゲンシランを特定した触媒と接触させて低
ハロゲン化シランまたはモノシランを安価に且つ
容易に製造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing low halogenated silane or monosilane from halogenated silane, and more specifically, for producing low halogenated silane or monosilane at low cost and easily by bringing halogenated silane into contact with a specified catalyst. Regarding the method.
特にモノシランは高純度の半導体級シリコンあ
るいは太陽電池用アモルフアスシリコンの原料と
して、またエピタキシヤル用原料として半導体工
業において有用な物質であり、今後さらに需要の
拡大が見込まれる。したがつて、より安価に且つ
容易な優れたモノシランの製造方法が望まれる。 In particular, monosilane is a useful substance in the semiconductor industry as a raw material for high-purity semiconductor grade silicon or amorphous silicon for solar cells, and as a raw material for epitaxial use, and demand is expected to further increase in the future. Therefore, an excellent method for producing monosilane that is cheaper and easier is desired.
従来、モノシランの製造方法としては
(1) マグネシウムシリサイドを液体アンモニア中
で塩化アンモニウムと作用させる方法
(2) テトラクロルシランをエーテル中でLiAlH4
によつて還元させる方法
(3) トリクロルシランを第3級アミノ基または第
4級アンモニウム基を含む陰イオン交換樹脂と
不均化反応させる方法
(4) 金属シリコンに水素ガスを高温高圧の条件下
でNi微粉末を用いて反応させる方法
などが知られている。 Traditionally, monosilane has been produced by (1) reacting magnesium silicide with ammonium chloride in liquid ammonia, and (2) reacting tetrachlorosilane with LiAlH 4 in ether.
(3) A method in which trichlorosilane is subjected to a disproportionation reaction with an anion exchange resin containing a tertiary amino group or a quaternary ammonium group (4) A method in which hydrogen gas is applied to metallic silicon under high temperature and high pressure conditions. A method of reacting using fine Ni powder is known.
しかしながら、上記(1)は工業的に実用化されて
いるが、極めて低温による反応が必要、原料の調
整が煩雑,副生する高次シランの再利用などを考
慮する設備費が高くなる。(2)はLiAlH4が極めて
高価であるため、大量生産に適応せず実用性に乏
しい。(3)は大量生産性およびエネルギーコストの
点で優れているが、陰イオン交換樹脂の熱的安定
性に間題がある。(4)は高温,高圧下の反応である
ため、設備費が高くなり且つ高次シランの副生を
伴う欠点がある。 However, although the above method (1) has been put into practical use industrially, it requires a reaction at extremely low temperatures, the preparation of raw materials is complicated, and the equipment costs are high considering the reuse of by-product higher-order silane. In (2), LiAlH 4 is extremely expensive, so it is not suitable for mass production and has little practicality. Although (3) is superior in terms of mass productivity and energy cost, there is a problem with the thermal stability of the anion exchange resin. Since (4) is a reaction at high temperature and high pressure, it has the drawbacks of high equipment costs and by-product of higher-order silane.
本発明者らは上記した如き特にモノシランの製
造方法における問題に鑑み、安価且つ簡便なモノ
シランを主たる目的として製造する方法につい
て、鋭意研究した。その結果、ハロゲンシランを
炭化水素,有機含窒素化合物または有機含リン化
合物に金属または金属塩が化学結合した有機金属
化合物と触媒的に接触させることにより、低ハロ
ゲン化シランまたはモノシランが容易に得られる
ことを見出して、本発明を提供するに至つたもの
である。 In view of the above-mentioned problems particularly in the method for producing monosilane, the present inventors have conducted extensive research into a method for producing inexpensive and simple monosilane with the main purpose of producing monosilane. As a result, low halogenated silanes or monosilanes can be easily obtained by catalytically contacting halogenated silanes with organometallic compounds in which metals or metal salts are chemically bonded to hydrocarbons, organic nitrogen-containing compounds, or organic phosphorus-containing compounds. This discovery led us to provide the present invention.
本発明の原料であるハロゲンシランとしては、
一般式SiHX3,SiH2X2,SiH3X(X:ハロゲン)
で表われるもので、例えばトリクロルシラン,ジ
クロルシラン,モノクロルシランのクロルシラン
が適用されるが、そのほか同様にブロムシラン,
フルオルシラン,ヨードシランも使用可能であ
る。したがつて、本発明によれば、上記のハロゲ
ンシランが低ハロゲン化されて、それぞれ
SiHX3からはSiH2X2,SiH3X,SiH4を、
SiH2X2からはSiH3X,SiH4を、またSiH3Xから
SiH4を目的物に応じて製造することが出来るが、
特にSiH2X2(ジクロルシラン)からSiH4(モノシ
ラン)を好適に得ることが出来る。 The halogen silane that is the raw material of the present invention includes:
General formula SiHX 3 , SiH 2 X 2 , SiH 3 X (X: halogen)
For example, chlorosilane such as trichlorosilane, dichlorosilane, and monochlorosilane are applicable, but bromosilane, bromosilane,
Fluorosilane and iodosilane can also be used. Therefore, according to the present invention, the above-mentioned halogensilanes are reduced in halogenation, and each
From SiHX 3 , SiH 2 X 2 , SiH 3 X, SiH 4 ,
From SiH 2 X 2 , SiH 3 X, SiH 4 , and from SiH 3 X
SiH 4 can be produced depending on the purpose, but
In particular, SiH 4 (monosilane) can be suitably obtained from SiH 2 X 2 (dichlorosilane).
本発明の特定した有機金属化合物としては、公
知のものが特に制限なく用いられる。即ち、本発
明の炭化水素化合物,有機窒素化合物および有機
含リン化合物は、いずれも金属または金属塩と一
般に化学結合して、それぞれ有機金属化合物を形
成しているものであればよい。炭化水素化合物と
しては、例えばエチレン,プロピレンなどのオレ
フイン類、ベンゼン,ジシクロペンタジエニル,
ビスシクロオクタジエンなどの低分子化合物およ
びポリスチレン,ジビニルベンで架橋したポリス
チレン樹脂,アクリル樹脂などの高分子化合物で
ある。また、有機含窒素化合物としては、例えば
メチルアミン,エチルアミンなどのアルキルアミ
ン,ε−カプロラクタム,アクリロニトリル,フ
エニルイソニトリルなどのニトリルなどの低分子
化合物,およびポリエチレンイミン,ポリアミ
ド,ポリ−チ−ビニルピリジン樹脂,ナイロンの
ほか−CH2N(CH3)2,−CH2CNなどの置換基を
結合したスチレン−ジビニルベンゼン系のイオン
交換樹脂が好適である。また、有機含リン化合物
としては例えばトリフエニルホスフイン,トリフ
エニルホスフアイト,トリエチルホスフアイトな
どの低分子化合物,およびジフエニルホスフイン
−CH2PPH2を結合したスチレン−ジビニルベン
ゼン系樹脂,ジビニルベンゼン−塩化アリル共重
合体などの高分子化合物が好適である。他方、金
属または金属塩としては、例えばPt,Pd,Ir,
Rh,Ru,Fe,Ni,Coなどの第8族金属のほか、
Ti,cr,Cu,Ag,Zn,Al,W,Mo,Vなどの
金属,あるいはそれらの塩化物,カルボニル化合
物などが挙げられる。有機金属化合物は、上記し
た炭化水素化合物,有機含窒素化合物および有機
含リン化合物に、所定の金属または金属塩が一般
にイオン交換または錯体として結合した形態であ
る。例えば、Pd(Ph3)2Cl2〕,〔Pt(PPh3)2Cl2〕の
ほか、特にイオン交換樹脂に第8族の金属または
金属塩との錯体である有機金属化合物が好適に用
いられる。 As the organometallic compound specified in the present invention, known compounds can be used without particular limitation. That is, the hydrocarbon compound, organic nitrogen compound, and organic phosphorus-containing compound of the present invention may be any compound that generally chemically bonds with a metal or a metal salt to form an organic metal compound. Examples of hydrocarbon compounds include olefins such as ethylene and propylene, benzene, dicyclopentadienyl,
These include low-molecular compounds such as biscyclooctadiene, and high-molecular compounds such as polystyrene, polystyrene resin crosslinked with divinylben, and acrylic resin. Examples of organic nitrogen-containing compounds include alkylamines such as methylamine and ethylamine, low molecular weight compounds such as nitriles such as ε-caprolactam, acrylonitrile, and phenylisonitrile, and polyethyleneimine, polyamide, and polyvinylpyridine resin. , nylon, and styrene-divinylbenzene-based ion exchange resins bonded with substituents such as -CH 2 N(CH 3 ) 2 and -CH 2 CN are suitable. Examples of organic phosphorus-containing compounds include low molecular weight compounds such as triphenylphosphine, triphenylphosphine, and triethylphosphite, as well as styrene-divinylbenzene resins bonded with diphenylphosphine-CH 2 PPH 2 and divinylbenzene. - High molecular compounds such as allyl chloride copolymers are preferred. On the other hand, examples of metals or metal salts include Pt, Pd, Ir,
In addition to Group 8 metals such as Rh, Ru, Fe, Ni, and Co,
Examples include metals such as Ti, cr, Cu, Ag, Zn, Al, W, Mo, and V, or their chlorides and carbonyl compounds. The organometallic compound is generally in the form of a predetermined metal or metal salt bonded to the above hydrocarbon compound, organic nitrogen-containing compound, and organic phosphorus-containing compound as an ion exchange or a complex. For example, in addition to Pd(Ph 3 ) 2 Cl 2 ] and [Pt(PPh 3 ) 2 Cl 2 ], organometallic compounds that are complexes with Group 8 metals or metal salts are particularly suitable for use in ion exchange resins. It will be done.
本発明において、ハロゲンシランは気体,液体
のいずれにしても使用可能であり、また触媒とす
る有機金属化合物も固体,液体,気体のいずれの
形態でも使用可能である。したがつて、本発明の
反応形態は極めて柔軟性に富み、必要に応じて有
利な形態を選択すればよい。例えば反応系にハロ
ゲンシランおよび有機金属化合物をいずれも液体
として供し、液相−液相の接触形態を構成する場
合には、気相−固相の接触形態などと比較して容
量的に小さくなるため、反応装置をコンパクトに
出来るばかりでなく、液体である有機金属化合物
の連続的な補充および制御が容易になり、良好な
反応状態を長時間維持することが出来る。なお、
液体の有機金属化合物は、例えば活性炭,アルミ
ナ,シリカ−アルミナなどの担体に担持すること
も触媒として最適量をコントールするために適宜
採用できる。 In the present invention, halogensilane can be used in either gas or liquid form, and the organometallic compound used as a catalyst can also be used in solid, liquid, or gas form. Therefore, the reaction form of the present invention is extremely flexible, and an advantageous form may be selected as required. For example, when both the halogen silane and the organometallic compound are provided as liquids to the reaction system and a liquid phase-liquid phase contact mode is formed, the capacity is smaller than that of a gas phase-solid phase contact mode. Therefore, not only can the reaction apparatus be made compact, but also the continuous replenishment and control of the liquid organometallic compound becomes easy, and a good reaction state can be maintained for a long time. In addition,
The liquid organometallic compound may be supported on a carrier such as activated carbon, alumina, or silica-alumina as appropriate to control the optimum amount as a catalyst.
本発明における有機金属化合物の使用量,反応
温度,接触時間などの条件は、用いる有機金属化
合物の種類,反応形態により異なり、一概に決定
できない。一般に、有機金属化合物はハロゲンシ
ランに対して1/500〜1/2000(重量)の割合で
用いればよい。反応温度は一般に25〜350℃,特
に50〜120℃が反応性およびエネルギー経済性か
ら好ましい。また、接触時間は一般に0.1〜60秒,
特に1〜20秒でも十分である。 Conditions such as the amount of organometallic compound to be used, reaction temperature, and contact time in the present invention vary depending on the type of organometallic compound used and the reaction form, and cannot be determined unconditionally. Generally, the organometallic compound may be used in a ratio of 1/500 to 1/2000 (by weight) to the halogen silane. The reaction temperature is generally 25 to 350°C, particularly preferably 50 to 120°C in terms of reactivity and energy economy. In addition, the contact time is generally 0.1 to 60 seconds,
In particular, 1 to 20 seconds is sufficient.
本発明により得られる反応生成物から目的とす
る低ハロゲン化シランまたはモノシランの分離
は、一般に冷却器などを使用して他の反応生成物
を適宜リフラツクスさせることにより、他の反応
生成物,未反応生成物および有機金属化合物との
沸点差を利用し蒸留などの好条件下で容易に達成
できる。 The target low-halogenated silane or monosilane can be separated from the reaction product obtained by the present invention by appropriately refluxing the other reaction products using a cooler or the like. This can be easily achieved under favorable conditions such as distillation by utilizing the difference in boiling point between the product and the organometallic compound.
以下、実施例を示すが、本発明はこれらに限定
されるものではない。 Examples will be shown below, but the present invention is not limited thereto.
実施例 1
(Ph3P)2PdCl2の7.0gとPh3Pの7.9gとをエタ
ノールに溶解し、さらにヒドラジン水化物のエタ
ノール溶液を加えて反応させ(Ph3P)4Pdの結晶
を得た。次いで、得られた(Ph3P)4Pdを洗浄,
乾燥した後、ベンゼンに溶解させ、該ベンゼン溶
液中に活性炭40gを浸漬して減圧蒸留に処した。Example 1 (Ph 3 P) 7.0 g of 2 PdCl 2 and 7.9 g of Ph 3 P were dissolved in ethanol, and an ethanol solution of hydrazine hydrate was added and reacted (Ph 3 P) 4 Pd crystals were Obtained. Then, the obtained (Ph 3 P) 4 Pd was washed,
After drying, it was dissolved in benzene, and 40 g of activated carbon was immersed in the benzene solution and subjected to vacuum distillation.
上記(Ph3P)4Pd含有の活性炭をステンレス製
反応器に充填し、80℃においてジクロルシラン
2.53/mmの流量で連続的に供給した。その結
果、モノシラン31.6mol%およびモノクロルシラ
ン20.1mol%の生成物を得た。 The above (Ph 3 P) 4 Pd-containing activated carbon was packed in a stainless steel reactor, and dichlorosilane was heated at 80°C.
It was supplied continuously at a flow rate of 2.53/mm. As a result, a product containing 31.6 mol% of monosilane and 20.1 mol% of monochlorosilane was obtained.
実施例 2
実施例1において、ジクロルシランの代りにト
リクロルシランを1.86/mmの流量で供給した以
外は同様に実施した。その結果、モノシラン
15.6mol%,モノクロルシラン17.7mol%および
ジクロルシラン29.3mol%の生成物を得た。Example 2 The same procedure as in Example 1 was carried out except that trichlorosilane was supplied at a flow rate of 1.86/mm instead of dichlorosilane. As a result, monosilane
A product containing 15.6 mol%, monochlorosilane 17.7 mol% and dichlorosilane 29.3 mol% was obtained.
実施例 3
Ph4(CO)16の2.1gを溶解したベンゼン溶液中
に、N,N′−ジメチルベンジルアミン基をもつ
イオン交換樹脂Amberlite A−21(ロームアンド
ハース社製)−28.4gを浸漬処理した。溶媒を除
去後の上記イオン交換樹脂を、ステレンス製反応
器に充填し、60℃に保持してジクロルシランを
0.78/mmの流量で供給した。その結果、モノシ
ラン33.6mol%およびモノクロルシラン21.9mol
%の生成物を得た。Example 3 In a benzene solution in which 2.1 g of Ph 4 (CO) 16 was dissolved, 28.4 g of ion exchange resin Amberlite A-21 (manufactured by Rohm and Haas) having an N,N'-dimethylbenzylamine group was immersed. Processed. After removing the solvent, the above ion exchange resin was packed into a Stellence reactor, kept at 60℃, and dichlorosilane was added.
It was supplied at a flow rate of 0.78/mm. As a result, 33.6 mol% monosilane and 21.9 mol% monochlorosilane
% product was obtained.
実施例 4
実施例3において、Rh(CO)16の代りに
K2PdCl4の3.1gを用いた以外は同様に実施した。
その結果、モノシラン30.2mol%,モノクロルシ
ラン22.1mol%を得た。Example 4 In Example 3, instead of Rh(CO) 16
The same procedure was carried out except that 3.1 g of K 2 PdCl 4 was used.
As a result, 30.2 mol% of monosilane and 22.1 mol% of monochlorosilane were obtained.
実施例 5
実施例4において、ジクロルシランの代りにト
リクロルシランを0.50/mmの流量で供給した以
外は同様に実施した。その結果、モノシラン
9.7mol%,モノクロルシラン12.9mol%,ジクロ
ルシラン20.6mol%の生成物を得た。Example 5 The same procedure as in Example 4 was carried out except that trichlorosilane was supplied at a flow rate of 0.50/mm instead of dichlorosilane. As a result, monosilane
A product containing 9.7 mol%, monochlorosilane 12.9 mol%, and dichlorosilane 20.6 mol% was obtained.
実施例 6
PuCl3の3.1gをエチレングリコールに溶解した
溶液に、ジビニルベンゼンで架橋したポリスチレ
ン樹脂33gを浸漬し、減圧蒸留してエチレングリ
コールを除去した。Example 6 33 g of polystyrene resin crosslinked with divinylbenzene was immersed in a solution of 3.1 g of PuCl 3 dissolved in ethylene glycol, and ethylene glycol was removed by vacuum distillation.
上記のRuCl3を固定化したポリスチレン樹脂
を、60℃の温度に保持したステレンス製反応器に
充填した後、ジクロルシランを1.2/mmの流量
で供給した。その結果、モノシラン28.3mol%,
モノクロルシラン22.6mol%の生成物を得た。 After the polystyrene resin on which RuCl 3 was immobilized was filled into a stainless steel reactor maintained at a temperature of 60° C., dichlorosilane was supplied at a flow rate of 1.2/mm. As a result, monosilane 28.3mol%,
A product containing 22.6 mol% of monochlorosilane was obtained.
Claims (1)
素化合物または有機含リン化合物に金属または金
属塩が結合した有機金属化合物と接触させること
を特徴とする低ハロゲン化シランまたはモノシラ
ンの製造方法。1. A method for producing a low-halogenated silane or monosilane, which comprises contacting a halogenated silane with an organometallic compound in which a metal or metal salt is bonded to a hydrocarbon compound, an organic nitrogen-containing compound, or an organic phosphorus-containing compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16833483A JPS6060916A (en) | 1983-09-14 | 1983-09-14 | Manufacture of slightly halogenated silane or monosilane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16833483A JPS6060916A (en) | 1983-09-14 | 1983-09-14 | Manufacture of slightly halogenated silane or monosilane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6060916A JPS6060916A (en) | 1985-04-08 |
| JPH0341404B2 true JPH0341404B2 (en) | 1991-06-24 |
Family
ID=15866123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16833483A Granted JPS6060916A (en) | 1983-09-14 | 1983-09-14 | Manufacture of slightly halogenated silane or monosilane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6060916A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009148878A2 (en) * | 2008-05-29 | 2009-12-10 | Ndsu Research Foundation | Method of forming functionalized silanes |
| US8206676B2 (en) | 2009-04-15 | 2012-06-26 | Air Products And Chemicals, Inc. | Method for making a chlorosilane |
-
1983
- 1983-09-14 JP JP16833483A patent/JPS6060916A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6060916A (en) | 1985-04-08 |
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