JPH0341405B2 - - Google Patents
Info
- Publication number
- JPH0341405B2 JPH0341405B2 JP18496883A JP18496883A JPH0341405B2 JP H0341405 B2 JPH0341405 B2 JP H0341405B2 JP 18496883 A JP18496883 A JP 18496883A JP 18496883 A JP18496883 A JP 18496883A JP H0341405 B2 JPH0341405 B2 JP H0341405B2
- Authority
- JP
- Japan
- Prior art keywords
- monosilane
- sih
- compound
- group
- reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 12
- 150000004756 silanes Chemical class 0.000 claims description 10
- 125000003277 amino group Chemical group 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000002994 raw material Substances 0.000 description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 4
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000007323 disproportionation reaction Methods 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000003456 ion exchange resin Substances 0.000 description 2
- 229920003303 ion-exchange polymer Polymers 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 125000001302 tertiary amino group Chemical group 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018830 PO3H Inorganic materials 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003957 anion exchange resin Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- VQPFDLRNOCQMSN-UHFFFAOYSA-N bromosilane Chemical compound Br[SiH3] VQPFDLRNOCQMSN-UHFFFAOYSA-N 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- IDIOJRGTRFRIJL-UHFFFAOYSA-N iodosilane Chemical compound I[SiH3] IDIOJRGTRFRIJL-UHFFFAOYSA-N 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 229910021338 magnesium silicide Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 1
Landscapes
- Silicon Compounds (AREA)
- Catalysts (AREA)
Description
【発明の詳細な説明】
本発明はハロゲンシランから低ハロゲン化シラ
ンまたはモノシランを製造する方法に関し、詳し
くはハロゲンシランを特定の化合物と接触させる
ことにより、安価にかつ容易に低ハロゲン化シラ
ンまたはモノシランを製造する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing low-halogenated silane or monosilane from halogenated silane, and more specifically, by bringing halogenated silane into contact with a specific compound, low-halogenated silane or monosilane can be produced easily and inexpensively. Relating to a method of manufacturing.
特にモノシランは高純度の半導体シリコンある
いは太陽電池用アモルフアスシリコンの原料とし
て、またエピタキシヤル用原料としても有用な物
質であり、今後さらに需要の拡大が見込まれる。
従つて、より安価なかつ効率的なモノシランの製
造が望まれる。 In particular, monosilane is a useful material as a raw material for high-purity semiconductor silicon or amorphous silicon for solar cells, and as a raw material for epitaxial use, and demand is expected to further increase in the future.
Therefore, cheaper and more efficient monosilane production is desired.
従来、モノシランの製造方法としては、例え
ば、
(1) マグネシウムシリサイドと希塩酸を作用させ
る方法
(2) テトラクロルシランを溶融塩中でLiHと反応
させる方法
(3) 金属シリコンに水素ガスを高温,高圧の条件
下にNi微粉末を用いて反応させる方法
などが知られている。 Conventional methods for producing monosilane include (1) a method in which magnesium silicide is reacted with dilute hydrochloric acid, (2) a method in which tetrachlorosilane is reacted with LiH in a molten salt, and (3) a method in which hydrogen gas is applied to metallic silicon at high temperature and high pressure. A method is known in which the reaction is performed using Ni fine powder under the following conditions.
しかしながら、上記(1)は原料の調整が煩雑、副
生する高次シランの再利用などを考慮する設備費
が高くなる。(2)はモノシランの収率が良好である
が、LiHが極めて高価、溶融塩を用いるためエネ
ルギー消費及び腐食の点に間題がある。(3)は高
温,高圧下の反応であるため設備費が高くなり、
また高次シランの副生を伴う欠点がある。 However, in the case of (1) above, the preparation of raw materials is complicated, and the equipment cost increases considering the reuse of by-product high-order silane. Method (2) has a good yield of monosilane, but LiH is extremely expensive, and since molten salt is used, there are problems in terms of energy consumption and corrosion. (3) is a reaction at high temperature and high pressure, so equipment costs are high;
It also has the disadvantage of producing high-order silane as a by-product.
他方、トリクロルシランを第3級アミノ基また
は第4級アンモニウム塩基を含む陰イオン交換樹
脂と不均化反応させる方法(4)が提案されている。
この方法(4)はイオン交換樹脂の熱安定性に問題が
あるが、エネルギーコスト及び大量生産の点で優
れている。 On the other hand, a method (4) has been proposed in which trichlorosilane is subjected to a disproportionation reaction with an anion exchange resin containing a tertiary amino group or a quaternary ammonium base.
Although this method (4) has a problem with the thermal stability of the ion exchange resin, it is superior in terms of energy cost and mass production.
本発明者らは、モノシランを主たる目的として
安価にかつ効率よく製造するために、上記(4)に相
当する不均化反応について鋭意研究した。その結
果、ハロゲンシランをアミノ基及びホスホン基を
有する化合物と接触させることによつて、低ハロ
ゲン化シランまたはモノシランが容易に得られる
ことを見出し、本発明を提供するに至つたもので
ある。 The present inventors have conducted intensive research on the disproportionation reaction corresponding to (4) above in order to produce monosilane inexpensively and efficiently with the main objective. As a result, the inventors discovered that a low halogenated silane or monosilane can be easily obtained by contacting a halogenated silane with a compound having an amino group and a phosphonic group, leading to the present invention.
本発明の原料であるハロゲンシランとしては、
一般式SiHX3,SiH2X2,SiH3X(X:ハロゲン)
で表わされ、例えばトリクロルシラン,ジクロル
シラン,モノクロルシランが適用されるが、その
ほか同様にブロムシラン,フルオルシラン,ヨー
ドシランも使用可能である。従つて、本発明によ
れば、上記のハロゲンシランが低ハロゲン化され
て、それぞれSiHX3からはSiH2X2,SiH3X,
SiH4を、SiH2X2からはSiH3X,SiH4を、また
SiH3XからSiH4をそれぞれ目的物に応じて製造
することが出来るが、特にSiH2X2からSiH4を好
適に得ることが出来る。 The halogen silane that is the raw material of the present invention includes:
General formula SiHX 3 , SiH 2 X 2 , SiH 3 X (X: halogen)
For example, trichlorosilane, dichlorosilane, and monochlorosilane are applicable, but bromosilane, fluorosilane, and iodosilane can also be used. Therefore, according to the present invention, the above-mentioned halogensilane is reduced in halogenation, and SiHX 3 is converted into SiH 2 X 2 , SiH 3 X, SiH 3
SiH 4 , SiH 3 X , SiH 4 from SiH 2
Although SiH 4 can be produced from SiH 3 X depending on the purpose, SiH 4 can be particularly preferably obtained from SiH 2 X 2 .
本発明に用いるアミノ基及びホスホン基のイオ
ン交換基を有する化合物としては、一般に該イオ
ン交換基がそれぞれ飽和または不飽和のアルキル
基,フエニル基またはベンジル基と直接または間
接に結合した液状の化合物また例えばポリスチレ
ンあるいはスチレン−ジビニルベンゼンの共重合
体など架橋性高分子体に直接または間接に結合し
た不溶性の一般にイオン交換体である固体状化合
物である。上記アミノ基としては、第1級アミノ
基,第2級アミノ基,第3級アミノ基もしくは第
4級アンモニウム基を含み、またホスホン基とし
ては、−PO3H2,−PO2H2,それらのNa型など置
換型を含む。 The compound having an ion exchange group such as an amino group or a phosphonic group used in the present invention is generally a liquid compound or a compound in which the ion exchange group is bonded directly or indirectly to a saturated or unsaturated alkyl group, phenyl group, or benzyl group, respectively. For example, it is an insoluble solid compound, generally an ion exchanger, bonded directly or indirectly to a crosslinkable polymer such as polystyrene or a styrene-divinylbenzene copolymer. The above amino group includes a primary amino group, a secondary amino group, a tertiary amino group, or a quaternary ammonium group, and the phosphonic group includes -PO 3 H 2 , -PO 2 H 2 , Including substitution types such as Na type.
本発明によれば、後記の実施例にも示すよう
に、アミノ基のみを有する化合物、あるいはホス
ホン基のみを有する化合物を用いた場合に比べ
て、目的とする低ハロゲン化シランまたはモノシ
ランを収率よく得ることが出来る。 According to the present invention, as shown in the examples below, the yield of the target low halogenated silane or monosilane is higher than when using a compound having only an amino group or a compound having only a phosphonic group. You can get a good deal.
本発明の原料であるハロゲンシランは、一般に
気体または液体として用いられ、また化合物も液
状または固体で用いられるため、反応形態が柔軟
性に富み、必要に応じて有利な形態を選択でき
る。さらに、液状のイオン交換体は例えば活性
炭,アルミナ,シリカ−アルミナなどに担持して
用いる態様も、該イオン交換体の最適量をコント
ロールするために好ましく採用される。 The halogen silane, which is a raw material of the present invention, is generally used as a gas or liquid, and the compound is also used as a liquid or solid, so the reaction form is highly flexible and an advantageous form can be selected as necessary. Furthermore, an embodiment in which the liquid ion exchanger is supported on, for example, activated carbon, alumina, silica-alumina, etc., is also preferably employed in order to control the optimum amount of the ion exchanger.
本発明における化合物の使用量,反応温度,接
触時間などの条件は、反応形態などにより異なる
ため一概に決定できない。反応温度は一般に25〜
350℃、特に50〜120℃が反応性及びエネルギー経
済性の面から好ましい。また、接触時間は一般に
0.1〜60秒特に1〜20秒でも十分である。 Conditions such as the amount of compound used, reaction temperature, and contact time in the present invention cannot be determined unconditionally because they vary depending on the reaction form. The reaction temperature is generally 25~
A temperature of 350°C, particularly 50 to 120°C, is preferred from the viewpoint of reactivity and energy economy. Also, contact time is generally
0.1 to 60 seconds, especially 1 to 20 seconds is sufficient.
本発明により得られる反応生成物から目的とす
る低ハロゲン化シランまたはモノシランの分離、
一般に冷却器などを使用して他の反応生成物を適
宜リフラツクスさせることにより、他の反応生成
物,未反応生成物及びポリアミン化合物の沸点差
を利用し、蒸留などの好条件下で容易に達成でき
る。 Separation of the desired low halogenated silane or monosilane from the reaction product obtained by the present invention,
Generally, this can be easily achieved under favorable conditions such as distillation by refluxing other reaction products appropriately using a cooler, etc., and by utilizing the boiling point difference between other reaction products, unreacted products, and polyamine compounds. can.
以下、実施例を示すが、本発明はこれらに限定
されるものではない。 Examples will be shown below, but the present invention is not limited thereto.
実施例 1
−NH−CH2−PO3H2基を有するキレート樹脂
Duolite ES467(ダイヤモンドシヤムロツク社製)
10gをステンレス製の反応器に入れ、温度を60℃
に保つた。次いで、ジクロルシランを0.8/mm
の流量で流した結果、モノシラン25.3mole%,
モノクロルシラン18.9mole%の生成物を得た。Example 1 Chelate resin having 2 -NH-CH2 - PO3H groups
Duolite ES467 (manufactured by Diamond Shamlok)
Put 10g into a stainless steel reactor and set the temperature to 60℃.
I kept it. Next, add dichlorosilane to 0.8/mm
As a result of flowing at a flow rate of 25.3 mole% monosilane,
A product containing 18.9 mole% of monochlorosilane was obtained.
実施例 2
実施例1におけるジクロルシランの代りにトリ
クロルシランを0.5/mmの流量で流した以外は、
実施例1と同様に実施した。その結果、モノシラ
ン12.3mole%,モノクロルシラン10.8mole%,
ジクロルシラン19.6mole%の生成物を得た。Example 2 Except that trichlorosilane was flowed at a flow rate of 0.5/mm instead of dichlorosilane in Example 1,
It was carried out in the same manner as in Example 1. As a result, monosilane 12.3 mole%, monochlorosilane 10.8 mole%,
A product containing 19.6 mole% of dichlorosilane was obtained.
比較例 1
実施例1におけるDuolite ES467の代りに第3
級アミノ基を有するイオン交換樹脂Amberliat
A−21(ロームアンドハース社製)を用いた以外
は、実施例1と同様に実施した。その結果、モノ
シラン16.3mole%,モノクロルシラン12.6mole
%の生成物を得た。Comparative Example 1 In place of Duolite ES467 in Example 1, the third
Ion exchange resin Amberliat with grade amino groups
The same procedure as in Example 1 was carried out except that A-21 (manufactured by Rohm and Haas) was used. As a result, monosilane 16.3 mole%, monochlorosilane 12.6 mole%
% product was obtained.
Claims (1)
を有する化合物と接触させることを特徴とする低
ハロゲン化シランまたはモノシランの製造方法。1. A method for producing a low halogenated silane or monosilane, which comprises contacting a halogenated silane with a compound having an amino group and a phosphonic group.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18496883A JPS6077120A (en) | 1983-10-05 | 1983-10-05 | Method for producing low halogenated silane or monosilane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18496883A JPS6077120A (en) | 1983-10-05 | 1983-10-05 | Method for producing low halogenated silane or monosilane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6077120A JPS6077120A (en) | 1985-05-01 |
| JPH0341405B2 true JPH0341405B2 (en) | 1991-06-24 |
Family
ID=16162498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18496883A Granted JPS6077120A (en) | 1983-10-05 | 1983-10-05 | Method for producing low halogenated silane or monosilane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6077120A (en) |
-
1983
- 1983-10-05 JP JP18496883A patent/JPS6077120A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6077120A (en) | 1985-05-01 |
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