JPH0341978B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a reproduction method and a method for manufacturing a semiconductor device with good characteristics by a plasma vapor phase method.

In the present invention, after a first semiconductor device having P-type and N-type semiconductor layers is formed on a substrate provided in a reactor by a plasma vapor phase method, N or P-type impurities of this semiconductor device are It is re-emitted from the inner wall of the reactor or the holder of the substrate into the P- or N-type semiconductor layer produced, and this is 10 ¹⁵ to 10 ¹⁸ cm ^-3
In order to prevent it from being mixed in at a concentration of
During each of these steps, a step of forming an intrinsic or substantially intrinsic (hereinafter referred to as I layer) coating film on the previously formed semiconductor layer (in this case, coating the film formed at the beginning of the next step) The purpose of this is to substantially eliminate past history.

In addition, the purpose is to provide a process to remove any previously produced semiconductor layers that have adhered to the inner walls of the reactor, the surfaces of the substrate holders, etc. by converting reactive gases such as CF ₄ into plasma. shall be.

By doing this, RUN−TO− can be performed with good reproducibility.
It has the characteristics that it can reduce the variation in RUN characteristics and also make the obtained characteristics extremely excellent.

The present invention also provides at least one bond, particularly PIN, PI, NI or PN, on the substrate provided in the reactor.
In semiconductor devices with junctions, in order to prevent impurities, particularly oxygen and alkali metal atoms, from being released from the inner wall of the reactor, particularly the inner wall with which plasma atoms or reactive gases collide, these surfaces are coated with intrinsic or substantially intrinsic The purpose is to form a semiconductor layer of, for example, non-single crystal silicon.

In order to prevent re-emission by coating to substantially remove these, the present invention provides a semiconductor layer with an output Po of electromagnetic energy necessary for fabricating a semiconductor device.
For example, 5 to 100W, for a temperature Ta of 200 to 320℃, Po-10W (minimum 5W) to Po+30W
It is characterized in that it is produced under the same or approximately the same conditions as Po and To, and preferably in the range of To-50°C to To+50°C, and is formed to have a thickness of 0.2 to 1 μm.

Conventionally, in the plasma CVD method, a semiconductor device having a PIN junction, etc. has been manufactured in a single reactor. However, when this bonding is repeated, it suffers from completely incomprehensible deterioration and variation, resulting in a structure that is unsuitable for reliability as a semiconductor device.

As a result of investigating the cause, we found that the biggest cause of this is that oxygen and alkali metals adhering in the reactor mix into the semiconductor layer, causing a decrease in electrical conductivity. Even if 1PPM is mixed, the dark conductivity of 10 ^-6 (Ωcm) ^-1 becomes 10 ^-8 (Ωcm) ^-1 and 1/
I had lowered it to 100.

Also, when it comes to alkali metals, the incorporation of 5PPM results in a decrease in P-type and I-type conductivity or a decrease in the conductivity of the transparent conductive film.

In order to prevent these contamination, a semiconductor layer is formed in advance to a thickness of 0.2 to 2μ on the inner wall of the reactor and on the parts of the substrate holder (also called boat) that will be sputtered by the reactive gas generated by the plasma. It was extremely important to coat the
When manufacturing one semiconductor device, when the last step is to create an N- ^or P-type semiconductor layer, and the next first step is to create a ^P- or N-type semiconductor layer, ^the An initial impurity such as phosphorus is mixed into the P-type semiconductor layer at a concentration of . For this reason, even if a P-type semiconductor layer is made by doping boron to a concentration of, for example, 10 ¹⁸ to 10 ²¹ cm ^-3 , its electrical conductivity is extremely poor because the number of recombination centers increases due to the incorporation of phosphorus. 10 ^-2 to 10 ⁺⁶ when there is no contamination
(Ωcm) ^-1 vs. 10 ^-6 ~10 ^-4 (Ωcm) ^-1 and 1/100 ~
I could only get 1/1000.

Therefore, in a PIN type photoelectric conversion device, 2 to 4
% efficiency with a fluctuation of ±200% for each run, which was not preferable.

However, in the method of the present invention, about 3% of 8 to 10%
It has become possible to obtain a conversion efficiency ~5 times higher.

In addition, in order to reduce the effect of this impurity oxygen doping, a patent application filed by the present inventor: Semiconductor device manufacturing method 56-55608 (original designation 53-152887, 1978)
(filed on December 10) is known. This is for example
When trying to make a PIN semiconductor device, each P layer, I
This is done by creating independent reactors for each layer and N layer, and moving the substrate between the layers. This method can take the same measures as the present invention and can provide extremely favorable electrical characteristics. However, in that case, the equipment would be three times as large as the one-room method, and the manufacturing cost would be lower.
It ends up being 2.5 to 3 times more expensive. Furthermore, it had drawbacks such as not being suitable for mass production.

The present invention is particularly effective in such reactors, particularly in horizontal reactors. It is also particularly effective when trying to fabricate semiconductor devices on a large number of substrates.
A major feature is that the manufacturing cost, including the depreciation of each semiconductor device, can be reduced to 1/100 of that of a vertical reactor.

That is, the present invention focuses on a method using a horizontally arranged reactor or reaction tube (10 to 30 cmφ, 1 to 5 m in length) for mass production.

A pair of electrodes for supplying electromagnetic energy for turning a reactive gas into plasma are provided on the outside of the reaction tube, and a heating device is provided outside of the electrodes to surround the reaction tube and the electrodes, and the inside of the reactor is heated in the direction of the furnace. A reactive gas is flowed and the substrate is placed along the flow of the gas.

Further, in such a device, substrates are arranged perpendicularly or parallel to the electromagnetic field generated by a pair of electrodes, and these are arranged in multiple stages or in multiple rows to form a total of 20 stages or 20 rows of 2 to 20 cm square substrates, for example, 10 cm square substrates. The description will focus on forming a film, particularly a film of silicon, silicon carbide, germanium silicide, or germanium film, ie, a semiconductor film mainly made of tetravalent elements, on 400 surfaces to be formed at once.

The present invention utilizes a reactive gas consisting of a hydride or halide (carbide silicide gas) having a carbon-silicon bond, a silicide gas such as silane (SinH _2o+2 n1), or a hydrocarbon such as acetylene. This invention relates to a plasma vapor phase method for forming a film mainly composed of non-single crystal silicon carbide, silicon or carbon on a surface at a reactor pressure of 0.05 to 1 torr and a temperature of 100 to 400°C.

The present invention further provides an impurity gas containing valent impurities such as B, Al, Ga, and In, such as diborane (B ₂ H ₆ ), and an impurity gas containing V-valent impurities, such as phosphin (PH ₃ ) or arsine. (AsH ₃ ) is added gradually to form a P-type layer, then an I-type layer and an N-type layer closely on the substrate having the surface to be formed.
The purpose is to form layers in the order of PIN and repeat this process to achieve stable production. Furthermore, the present invention uses the power of electromagnetic energy to produce a plasma to produce semiconductors with an amorphous structure (hereinafter referred to as AS), semi-amorphous (semi-amorphous, hereinafter referred to as SAS) with microcrystallinity with a size of 5 to 100A, or The aim is to fabricate a non-single crystal semiconductor film such as a semiconductor having a micro-polycrystal (hereinafter referred to as PC) structure with a size of 200A. If stronger electromagnetic energy is applied, the substrate surface tends to form an amorphous structure full of sputtered electrical defects. To eliminate such defect structures, the substrates are spaced 10-40 mm apart from each other, typically 20-25 mm, and the plasma reaction
Even if a high energy of 500W is required, the distance to obtain the substantial plasma energy of this spies on the surface to be formed can be controlled by the distance between the substrates, and the film can be coated with a substantially weak power of 2 to 20W. It is characterized in that it has the same characteristics when it is made into a material.

Therefore, in the present invention, silicon carbide (SixC _1-11 0<x<1) is used as the reactive gas as the starting material.
When trying to make , a material with carbon-silicon bonds was used. That is, hydrides or halides having a carbon-silicon bond, such as tetramethylsilane (Si(CH ₃ ) ₄ ) (simply referred to as TMS), tetraethylsilane (Si(C ₂ H ₅ ) ₄ ), Si(CH ₃ )xcl _{4 -x} (1
x3) A reactive gas such as Si( _CH3 ) _xH4-x (1x3) is used to facilitate the formation of Si-C bonds in the reaction product.

When attempting to obtain a film containing silicon as the main component, silane of SinH _2o+2 (n1), SiF ₄ or a mixed gas thereof was used. When trying to obtain carbon, acetylene (C ₂ H ₁ ) or ethylene (C ₂ H ₄ ) was mainly used. By doing this, silicon (Si), silicon carbide (SixC _1-x 0<x<1)
or carbon (C) (combining these sixC _1-x (0
x1), hence the term silicon carbide hereinafter refers to SixC _1-x (0x1)).

Furthermore, valent or valent impurities are added here to form P-type, I-type (intrinsic or substantially intrinsic without artificially adding impurities, including autodoping, etc.) and N-type semiconductors or semi-insulators from the surface to be formed. was created.

Furthermore, when such a reactive gas is used, the reactor can be heated to 1 atm or less, particularly 0.01 to 10 torr, typically 0.3 to 10 torr.
It is also possible to form a coating at 0.01 to 100 MHz, especially 500 KHz or 13.56 MHz, even at an electromagnetic energy of 50 W or less under a pressure of 0.6 torr. In other words, a low-energy plasma CVD device could be achieved.

Furthermore, if a high-energy plasma atmosphere of 50 to 500 W is applied, the formed silicon carbide becomes microcrystalline, and as a result, in the P type or N type, boron or phosphorus is added by 0.1 to 5% (here, (B ₂ H ₆ or
When the ratio of PH ₃ )/(carbide gas or carbide silicide gas + silicide gas) is added, the electrical conductivity is between 10 ^-9 and 10 ^-3 (Ω) at low energies.
We were able to increase the ^temperature from 10 ^-6 to 10 ⁺² (Ωcm) ^-1 , which was about 1,000 times.

Furthermore, silicon carbide obtained using this high-energy method was able to have a so-called SAS structure having a microcrystalline structure with a size of 5 to 200 A.
In such SAS, the ionization rate of the acceptor or donor of the or N-type impurity is 97
~100% and was able to activate all of the added impurities.

The plasma vapor phase method of the present invention will be explained below with reference to the drawings.

FIG. 1 shows an outline of a plasma CVD apparatus using the present invention.

In FIG. 1, a substrate 1 having a surface to be formed is held in a square quartz holder, and as shown in the drawing, it has a total of 14 holders in 7 stages and 2 rows. The substrate and holder are placed in advance in a separate chamber 29 at the front of the reactor through an inlet 30, and vacuum is applied by a valve 32 and a rotary pump 33. Furthermore, the opening/closing door 34 is opened and the mixture is introduced into the reactor by an automatic feeding device, and a mixing plate 35 for a mixer is also placed at the same time. These were carried out in a vacuum state in both the reactor and a separate room to prevent even the slightest amount of oxygen (air) from entering the reactor. Further, by closing the opening/closing door 34, the substrate was placed between the electrodes 9 and 10 as shown in the drawing.

The substrates are arranged at intervals of 10 to 40 mm, typically 20 to 25 mm, and a mixer 8 is installed in front of the reactor 25 to flow the reactive gas from this holder into a laminar flow. The gas is provided to be uniformly injected into the gap between the substrates. The surface to be formed is the lower surface of the substrate or side surfaces arranged vertically with their back surfaces stacked on top of each other.

Further, the drawing shows the structure of the reaction system viewed from above, and the substrates 1 are arranged vertically with their back surfaces facing each other. Removing flakes to the bottom using gravity in this way is extremely important when considering mass production yield. Further, in the reactor 25 into which this substrate 1 is inserted, an electric field of electromagnetic energy is applied perpendicularly or parallelly to the substrate (especially if it is parallel, it is easier to obtain a uniform coating) as shown in FIG. 2 A or B, especially B. a pair of electrodes 9,
10 were arranged vertically or horizontally. An electric furnace 5 is provided outside this electrode, and the substrate 1 is
It is heated to 100-400℃, typically 300℃.

Reactive gases were introduced from a carrier gas of hydrogen or helium, such as helium 13, from diborane 14, a valence impurity, from phosphin 15, a valence impurity, and from silane 16, a silicide gas, a valence additive.

Also, reactive gas TMS with carbon-silicon bonds
When 20 is used, it is stored in a stainless steel container 21 because it is liquid in the initial state. This container is controlled at a predetermined temperature by an electronic constant temperature layer 22.

This TMS has a boiling point of 25° C., and the rotary pump 12 was evacuated through the valve 11 to maintain the inside of the reactor at 0.01 to 10 torr, particularly 0.02 to 0.4 torr.
In this way, TMS can be vaporized at a pressure lower than 1 atmosphere without any particular heating. Introducing this vaporized TMS into the reactor at 100% concentration through a flow meter allows for more accurate flow control than the conventional method of bubbling the container 21 to release reactive gas. possible and technically important.

In practice, if the flow meter becomes clogged, 2.
Helium was introduced from 4.

In addition, when removing reaction products attached to the inner wall or surface of the reaction tube 25 or holder 2, 17
Introducing CE ₄ or CF ₄ + O ₂ (2-5%),
Fluorine radicals were generated by applying electromagnetic energy and removed by gas phase etching.

Furthermore, in this plasma discharge, after reactive gases are mixed through the mixing chamber 8, they are decomposed or reacted in the excitation chamber 26, and a spatial reaction is mainly used to form a reaction product on the substrate.
As electromagnetic energy, direct current or high frequency from the power source 4 was mainly used.

In this way, a silicon carbide film was formed on the surface to be formed. For example, the substrate temperature was 300° C., the high frequency energy output was 25 W, and the silane or TMS was 50 c.c./min and the carrier gas was He 250 c.c. min. (Reactive gas/He) A film growth rate of 160 A/min could be obtained at 5.

Furthermore, this film formation requires PIN junction, PN junction,
PI, NI junctions, PINPIN junctions, etc. were formed by gradually stacking the necessary reaction products on the substrate to the required thickness.

After the film has been formed on the surface to be formed in this manner, the reactive gas is sufficiently purged from the reaction tube, and the opening/closing door 34 is opened to remove the mixer mixing plate 35 and the substrate on the jig 3. Both the reaction column and the separate chamber were moved to a separate chamber 29 using an automatic extraction tube under vacuum (0.01 torr or less). Further, after closing the opening/closing door 34, a valve 31 was opened in the separate chamber to fill it with air to bring it to atmospheric pressure, and then the jig and the substrate on which the film was formed were taken out.

As is clear from the above embodiments, the present invention involves mixing reactive gases in the mixer 8, and then flowing the reactive gases into the exhaust port 6 in a layered manner (microscopically, they were in random motion when turned into plasma). It is characterized in that the substrate is arranged parallel to the flow, and a film is formed on the surface to have a thickness of 0.1 to 3 μm with a variation within ±5%.

Further, at this time, plasma is generated using a glow discharge method, and a feature is that the electrode is placed outside the reaction tube so that plasma can be generated uniformly over a large number of substrates.

Also, when forming a film, if the reaction tube is made longer, such as 20 stages and 20 rows, instead of 7 stages and 2 rows as shown in the drawing,
It is important to use a lower pressure of 0.2, 0.1, or 0.05 torr instead of 0.4 torr in order to obtain uniformity of the film quality, especially uniformity between the front row and the rear row.

In addition, in order to prevent uncontrollable oxide gases such as oxygen from entering the reactor, a separate chamber was provided, and the work was connected to the atmosphere through this separate chamber.
This was extremely important in obtaining reproducibility of the properties of the resulting coatings.

FIG. 2 shows the relationship between the arrangement of the substrate 1 and the electrodes 9 and 10 when viewed from the direction of the exhaust port 6 in the drawing of FIG. In the drawing, A indicates that the substrate is horizontal and the electrodes 9 and 10 are
In this case, the number of substrates that can be introduced at once can be increased.

Figure 2B shows the electromagnetic field caused by the electrodes 9 and 10, and the substrate 1
Both are vertical, and the number of boards arranged is 2 of A.
Double.

FIG. 3 shows an operational procedure chart of the semiconductor device manufacturing method of the present invention.

In the drawing, 49, which is "0", indicates maintenance of 0.01 torr or less by evacuation of the reactor. Furthermore, 40 of "1" indicates coating of silicon or silicon carbide on the reactor or reaction cylinder and holder according to the present invention.

The details of this coating are shown in FIGS. 3B and 3C. Figure 3B is due to vacuum 49
After keeping the temperature at 0.01 torr or less for 10 to 30 minutes, the hydrogen is plasma cleaned using electromagnetic energy at an output of 30 to 50 W for 0 to 30 minutes to remove adsorption, moisture,
Oxygen was removed. After further removing the hydrogen,
51, helium was simultaneously turned into plasma for 10 to 30 minutes with an output of 30 to 50 W, and hydrogen on the surface was further removed. For this hydrogen plasma generation 50, when HCl or Cl is added to hydrogen at a concentration of 1 to 5%, chlorine radicals are generated at the same time.
This radical quartz has the effect of scooping out alkali metals such as sodium present inside the holder. Therefore, the background level concentration of sodium, water, and oxygen in the formed film could be reduced to 10 ¹⁴ cm ^-3 or less, which was an extremely important pretreatment step.

When this chlorine was added, sputtering with an inert gas in No. 51 was also effective in removing the chlorine remaining adsorbed on the wall surface.

After evacuating these systems, silane, which is a silicide gas, or TMS, which is a silicon carbide compound, is introduced and decomposed by plasma energy to 0.1
It was formed to a thickness of ~2μ, typically 0.2-0.5μ.
When these films were formed, they tended to be particularly thick in areas where high electromagnetic energy was applied, that is, areas where impurities were likely to be re-emitted, resulting in doubly favorable results.

Even if the complicated pretreatment process of the present invention is not performed, after evacuation as shown in FIG. 3C,
Similarly, silicon or silicon carbide is 0.1 to 52.
It was effective to prevent the re-release of oxygen and alkali metals from the reactor wall by forming 2μ.

In addition, in FIG. 3A, in order to fabricate a semiconductor device, coating the substrate, evacuation of the system 41, fabricating a P or N type semiconductor 42, fabricating an I type semiconductor layer 43, and fabricating an N type semiconductor layer 44 are performed. , 1st
48 semiconductor devices were manufactured. Needless to say, this semiconductor device must be manufactured according to device design specifications having at least one junction such as PI, NI, PIN, PN, etc. described above.

Furthermore, after this, for this system, the reaction system in which only the reactor or the reactor and the holder are inserted is coated with the same semiconductor layer as the I-type semiconductor layer shown at 46 or the semiconductor layer shown at 42'. The debris in step 44 used in manufacturing the semiconductor device was prevented from affecting the next run. The details are shown in FIGS. 3B, C, D, and E.

That is, FIG. 3B has the same steps as the pretreatment described above, including evacuation 49, hydrogen plasma discharge 50, helium plasma treatment 51, and step 52 of forming a semiconductor layer, which is the first step in the run of the semiconductor device. However, since these steps 50 and 51 have already been carried out at 46 in A, it is generally sufficient to fabricate a semiconductor layer with a thickness of 0.1 to 2 μm in 52 C.

Further, in order to eliminate the history of the previous semiconductor device fabrication 40, that is, the previous run, plasma etching steps shown in D and E may be performed. In other words, Figure 3B shows the vacuum 49CF ₄ or CF ₄ +O ₂ (approximately 5%)
was introduced from 17 in FIG. 1, and plasma etching 53 was performed for 20 minutes to 1 hour. After further evacuation, hydrogen plasma treatment 50 was applied for 10 to 30 minutes to remove C and F residues, and then this I layer was further treated with hydrogen plasma for 10 to 30 minutes.
A semiconductor layer of 0.05 to 0.5 μm type I or the same conductivity type and composition as the semiconductor layer 42' of the first run in the next step was prepared. This method was the most thorough and could guarantee reproducibility.

As a simple method, steps 49 of evacuation, plasma etching 53, and removal of the remaining adsorbed gas 50 shown in E were performed.

In this way, the first semiconductor device is manufactured 4
Between the last step 44 of step 8 and the first step 42' of the next step 48', P or N type impurities are mixed with each other.
2' was able to eliminate the possibility of contamination.

It was also possible to prevent the addition of additives such as carbon and germanium at 44 to 42'.

FIG. 4 shows the results of evaluating the effects of the method of the present invention.

FIG. 4 shows the results of a photoelectric conversion device manufactured using the method of the present invention. In this case, the substrate is a metal such as a stainless steel substrate or a translucent glass substrate with a multilayer electrode of 500 to 2000 amps of ITO and further formed with tin oxide or antimony oxide to a thickness of 100 to 500 amps. A substrate was used. On top of this, P-type silicon carbide (SixC _1-x 0x1) (e.g.
silicon to a thickness of 0.4 to 0.7μ, and then N-type silicon carbide (SixC _1-x 0x1 e.g. x = 0.3
~0.5) to a thickness of 100 to 300A. The specifications of this P, I, and N type semiconductor are 42, 43, and 4 in the chart of Figure 3A.
4,42'...

Further, in this step, a photoelectric conversion device was fabricated by forming an ITO film to a thickness of 600 to 800 A or an aluminum metal film using a vacuum evaporation method. The conversion efficiency is shown in FIG. 4A.

3% of 71 without pretreatment 40 under AM1 (100 mW/cm ² ) condition with cell size of 1 cm ²
However, when pretreatment was performed again, a value of 70 was obtained.
Further, by adding 46 intermediate steps, the change in run (manufacturing) efficiency was 60, whereas if no steps were added, 61 was obtained.

60 can obtain an efficiency of 11 to 9%, whereas it was only 1 to 4% when the method of the present invention was not used.

Further, when the cell area is set to 100 cm ² , an efficiency of 7 to 9% can be obtained using the method of the present invention, whereas it was 0 to 3% when the method of the present invention is not used. In particular, 30% or more of them had no diode characteristics, making it impossible to manufacture them.

FIG. 4B shows the value of electrical conductivity when an I-type silicon semiconductor is made in the process of making a P-type semiconductor especially at the surface level.

When a P-type semiconductor is produced in the pre-process and no pre-treatment is performed in the intermediate treatment method of the method of the present invention, the electric conductivity of AM1 when irradiated with light is 65. There were also cases where the dark conductivity was 64 and the opposite, and the values also varied widely from 10 ^-6 to 10 ^-4 . On the other hand, when the pretreatment of the present invention was carried out, a photoconductivity of 70 and a dark conductivity of 70' were obtained. Further, when intermediate treatment was performed, a photoconductivity of 62 and a dark conductivity of 63 were obtained. These clearly show how important it is to prevent doping effects in the present invention.

As is clear from the above description, the present invention is extremely important in manufacturing not only photoelectric conversion devices or light emitting devices, but also various semiconductor devices such as field effect semiconductor devices and photo sensor arrays using the same reaction tube. The company provides equipment and a manufacturing method that enables the production of non-single crystal semiconductor films on 100 to 500 square substrates in the same amount of time as it takes to produce four 10 cm square squares using a conventional vertical plasma CD device. This makes it extremely suitable for mass production. Furthermore, by arranging the electrode structure or substrate as in the present invention, 10%
The above conversion efficiency could be repeatedly and stably obtained, and the film quality was also extremely excellent.

In the present invention, silicon carbide (SixC _1-x 0x
The main focus is on 1). However, if germane is used as a reactive gas, SixGe _1-x (0x1) can be obtained, and the first PIN structure is made of silicon and silicon carbide, and the second PIN structure is made of silicon and germanium silicide to form a so-called tandem PIN structure. It is also possible to obtain a structure.

The present invention has been mainly described with reference to a horizontal plasma CVD apparatus shown in FIG. However, the present invention is also effective even in a plasma CVD apparatus in which the electrode is made of a dielectric type or uses arc discharge.
Vertical and horizontal bergier type plasmas
The method of the present invention can be similarly applied to CVD equipment.

[Brief explanation of drawings]

FIG. 1 shows a plasma vapor phase apparatus of the present invention. FIG. 2 shows a part of FIG. FIG. 3 is a chart using the plasma vapor phase method of the present invention using the apparatus shown in FIG. FIG. 4A shows the efficiency of the photoelectric conversion device obtained according to the chart of FIG. 3, and B shows other data showing the doping prevention effect of the method of the present invention.

Claims (1)

[Claims] 1. When forming a P- or N-type semiconductor layer on a substrate disposed in a reactor by plasma vapor phase method, before forming the semiconductor layer, the inner wall of the reactor or the substrate By forming on the surface of the holder an intrinsic or substantially intrinsic semiconductor layer or a semiconductor layer of the same conductivity type as that to be formed next,
Prevents P- or N-type impurities in the semiconductor layer formed in the previous process, or impurities such as oxygen and alkali metals from the inner wall of the reactor, from entering the semiconductor layer on the newly formed substrate. A method for manufacturing a semiconductor device characterized by the following. 2. In claim 1, the formation of an intrinsic or substantially intrinsic semiconductor layer in a reactor, or in a reactor and a substrate holder installed in the reactor is performed at a temperature T ₀ −50 relative to the semiconductor layer production temperature T ₀ . ℃〜T ₀
A method for manufacturing a semiconductor device, characterized in that it is performed in a temperature range of +50°C.