JPH0346961B2 - - Google Patents
Info
- Publication number
- JPH0346961B2 JPH0346961B2 JP57190142A JP19014282A JPH0346961B2 JP H0346961 B2 JPH0346961 B2 JP H0346961B2 JP 57190142 A JP57190142 A JP 57190142A JP 19014282 A JP19014282 A JP 19014282A JP H0346961 B2 JPH0346961 B2 JP H0346961B2
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- layer
- resistance element
- metal
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistors, capacitors or inductors
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明は厚膜回路に関し、特に厚膜抵抗体と厚
膜導体との接続部に特徴を有するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a thick film circuit, and is particularly characterized by a connection between a thick film resistor and a thick film conductor.
(ロ) 従来の技術
抵抗体とそれに接続される導体とを厚膜技術に
より形成する際、それらの何れを先に形成すべき
かは抵抗体や導体の材料等により決まる。例え
ば、酸化ルテニウムペーストを用いて抵抗体を、
また銅ペーストを用いて導体を夫々作る場合、第
1図に示す如く、基板1上にまず抵抗体2を形成
し、次いで導体3,3を形成しなければならな
い。(b) Prior Art When forming a resistor and a conductor connected thereto by thick film technology, which of them should be formed first depends on the material of the resistor or conductor. For example, make a resistor using ruthenium oxide paste,
Further, when each conductor is made using copper paste, as shown in FIG. 1, it is necessary to first form a resistor 2 on a substrate 1, and then form conductors 3, 3.
なぜなら、酸化ルテニウムペーストの焼成は酸
化雰囲気、例えば空気中でなさねばならず、一方
銅ペーストの焼成により形成した銅からなる導体
は、その形成後、高温酸化雰囲気中に曝されると
瞬時に酸化してしまうからである。 This is because the sintering of ruthenium oxide paste must be carried out in an oxidizing atmosphere, such as air, whereas the conductor made of copper formed by sintering the copper paste oxidizes instantly when exposed to a high temperature oxidizing atmosphere after its formation. This is because you end up doing it.
この問題を解決する方法として、例えば特開昭
55−43810号(HOlC7/00)公報に開示されてい
るように、導体材料として貴金属である銀を使用
する方法が公知であるが、貴金属は高価であると
いう問題がある。 As a way to solve this problem, for example,
As disclosed in Publication No. 55-43810 (HOlC7/00), a method of using silver, which is a noble metal, as a conductive material is known, but there is a problem that noble metals are expensive.
ところで、厚膜抵抗体の抵抗値は、ペースト中
の金属または金属酸化物の粉末と結着剤との混合
比により決まり、高抵抗になるほど、結着剤の量
が多くなる。従つて、数百キロオーム以上の高抵
抗用ペーストでは結着剤の割合が極めて多くな
り、斯るペーストの焼成により得られた抵抗体の
表面層はほとんど結着剤により占められる。 By the way, the resistance value of a thick film resistor is determined by the mixing ratio of the metal or metal oxide powder and the binder in the paste, and the higher the resistance, the greater the amount of the binder. Therefore, in a paste for high resistance of several hundred kilohms or more, the proportion of the binder becomes extremely large, and the surface layer of a resistor obtained by firing such a paste is almost entirely occupied by the binder.
即ち上記第1図の例でいえば、抵抗体ペースト
は酸化ルテニウム粉末と結着剤であるガラス粉末
とを主成分とするものであるから、第2図に示す
如く焼成された抵抗体2の表面層2aはガラスリ
ツチとなり、底面層2bは酸化ルテニウムリツチ
となるのである。 That is, in the example shown in FIG. 1 above, since the resistor paste mainly consists of ruthenium oxide powder and glass powder as a binder, the fired resistor 2 as shown in FIG. The surface layer 2a is glass rich, and the bottom layer 2b is ruthenium oxide rich.
然るに、この様な場合、第2図中矢印で示す如
く、抵抗体2中を流れる電流の大部分は、導体
3,3との接続部付近において絶縁性に近いガラ
スリツチな部分を流れるため、その抵抗値は当初
期待した抵抗値から大きく変動し、また斯るガラ
スリツチな部分の発生状態は不安定であるため抵
抗値のばらつきも大きい。 However, in such a case, as shown by the arrow in FIG. The resistance value fluctuates greatly from the initially expected resistance value, and since the state of occurrence of such a glass-rich portion is unstable, the resistance value also varies greatly.
(ハ) 発明が解決しようとする課題
そこで、本発明は、厚膜抵抗体の表面に現れる
結着剤成分を多く含む表面層により、厚膜抵抗体
の抵抗値が所期の抵抗値から外れるのが防止され
ると共に抵抗値のばらつきの少ない厚膜回路を提
供することを目的とするものである。(c) Problems to be Solved by the Invention Therefore, the present invention solves the problem that the resistance value of the thick film resistor deviates from the intended resistance value due to the surface layer containing a large amount of binder component appearing on the surface of the thick film resistor. It is an object of the present invention to provide a thick film circuit in which this phenomenon is prevented and the variation in resistance value is reduced.
(ニ) 課題を解決するための手段
上述の点に鑑み、本発明の厚膜回路は、金属ま
たは金属酸化物と結着剤とを主成分とする抵抗体
ペーストを基板上に所定の間隔を設けて印刷、焼
成した一対の厚膜低抵抗体と、金属または金属酸
化物と結着剤とを主成分とする抵抗体ペーストを
両端部が夫々前記一対の厚膜低抵抗体上に位置す
るように前記基板上に印刷、焼成し、且つ結着剤
成分を多く含む第1の層及び該第1の層の下方に
位置する金属または金属酸化物成分を多く含む第
2の層を有した厚膜高抵抗体と、卑金属を主成分
とする導体ペーストを、前記両厚膜抵抗体が形成
された基板上に、その端部が前記厚膜低抵抗体上
に位置するように印刷、焼成した厚膜導体とを備
え、前記厚膜低抵抗体と前記厚膜高抵抗体の第2
の層とで電流路が形成されることを特徴とするも
のである。(d) Means for Solving the Problems In view of the above-mentioned points, the thick film circuit of the present invention includes a resistor paste containing a metal or a metal oxide as a main component and a binder at a predetermined interval on a substrate. A pair of thick-film low-resistance elements prepared, printed, and fired, and a resistor paste containing a metal or metal oxide and a binder as main components, with both ends thereof respectively positioned on the pair of thick-film low-resistance elements. A first layer containing a large amount of a binder component and a second layer containing a large amount of a metal or metal oxide component located below the first layer are printed and fired on the substrate as shown in FIG. A thick-film high-resistance element and a conductor paste containing a base metal as a main component are printed and fired on the substrate on which both of the thick-film resistors are formed so that the ends thereof are located on the thick-film low-resistance element. a second thick film conductor of the thick film low resistance body and the thick film high resistance body;
A current path is formed between the layers.
(ホ) 作用
上記構成により、厚膜低抵抗体中を流れる電流
は、厚膜低抵抗体と厚膜高抵抗体の第2の層を介
して流れるので、結着剤成分を多く含む第1の層
を経由しない。(E) Effect With the above configuration, the current flowing through the thick film low resistance element flows through the second layer of the thick film low resistance element and the thick film high resistance element, so that the first layer containing a large amount of binder component layer.
(ヘ) 実施例
以下に本発明の一実施例を第3図〜第7図に示
す製造工程順に説明する。(F) Example An example of the present invention will be described below in the order of manufacturing steps shown in FIGS. 3 to 7.
第3図工程で、アルミナ基板4上に一対の低抵
抗体ペースト5′,5′を印刷、乾焼し、次いで第
4図の工程で、上記各低抵抗体ペーストをブリツ
ジする如く本来の高抵抗体ペースト6′を印刷、
焼成した後、第5図の工程で低抵抗体ペースト
5′,5′及び高抵抗体ペースト6′の同時焼成を
行い低抵抗体5,5及び高抵抗体6を形成する。 In the process shown in FIG. 3, a pair of low resistance pastes 5' and 5' are printed and dried on the alumina substrate 4, and then in the process shown in FIG. Print resistor paste 6',
After firing, the low resistance element pastes 5', 5' and the high resistance element paste 6' are simultaneously fired in the process shown in FIG. 5 to form the low resistance elements 5, 5 and the high resistance element 6.
低抵抗体ペースト5′,5′には数オーム乃至数
百オームの低抵抗用、また高抵抗体ペースト6′
には数百キロオーム乃至数メガオームの高抵抗体
用の酸化ルテニウムペーストを夫々用い、その焼
成は850℃の空気中で行う。 Low resistance pastes 5' and 5' include low resistance pastes of several ohms to several hundred ohms, and high resistance pastes 6'.
Ruthenium oxide paste for high-resistance elements of several hundred kilohms to several megaohms is used for each, and the firing is performed in air at 850°C.
第6図の工程で導体ペーストを所定パターンで
印刷し、乾燥と焼成をして低抵抗体5,5の端部
と重畳する導体7,7を形成する。上記導体ペー
ストとしてはデユポン社等から販売されている銅
ペーストを用い、その焼成は500〜600℃の窒素雰
囲気中で行う。 In the process shown in FIG. 6, a conductor paste is printed in a predetermined pattern, dried and fired to form conductors 7, 7 which overlap the ends of the low resistance elements 5, 5. As the conductive paste, a copper paste sold by DuPont and others is used, and the baking is performed in a nitrogen atmosphere at 500 to 600°C.
このように製造された厚膜回路において、第7
図に示すごとく、高抵抗体6の表面層(第1の
層)6aはガラスリツチとなり、底面層(第2の
層)6bは酸化ルテニウムリツチとなるが、導体
7,7は低抵抗体5,5を介して高抵抗体6の酸
化ルテニウムリツチな底面層6bと電気的に結合
する。 In the thick film circuit manufactured in this way, the seventh
As shown in the figure, the surface layer (first layer) 6a of the high-resistance element 6 is glass-rich, the bottom layer (second layer) 6b is ruthenium oxide-rich, and the conductors 7, 7 are the low-resistance element 5, It is electrically coupled to the ruthenium oxide-rich bottom layer 6b of the high-resistance element 6 via the ruthenium oxide layer 6b.
これにより、高抵抗体6中を流れる電流はガラ
スリツチな表面層6aをほとんど経由しないの
で、上記従来の従き抵抗値の変動やばらつきがな
い。 As a result, the current flowing through the high-resistance element 6 hardly passes through the glass-rich surface layer 6a, so that there is no variation or dispersion in the resistance value as in the conventional case.
ところで、上述の実施例においては、高抵抗体
6は低抵抗体5,5と酸化ルテニウムリツチな面
で接続されているので、高抵抗体中6を、一方の
低抵抗体5から、他方の低抵抗体5に向かつて流
れる電流は、ガラス成分が極めて多い高抵抗体表
面層を除く部分に流れる。したがつて、高抵抗体
6の実質的な抵抗値は、表面層を除いた酸化ルテ
ニウム成分を含有する部分で決まる。言い換えれ
ば、高抵抗体6の実質的な抵抗値は、高抵抗体表
面層のガラスリツチな部分の発生状態によりその
値があまり変動することなく決定される。 By the way, in the above embodiment, the high resistance element 6 is connected to the low resistance elements 5, 5 through a ruthenium oxide rich surface, so the high resistance element 6 is connected from one low resistance element 5 to the other. The current flowing toward the low resistance element 5 flows in a portion excluding the high resistance element surface layer, which has an extremely large glass component. Therefore, the substantial resistance value of the high-resistance element 6 is determined by the portion containing the ruthenium oxide component excluding the surface layer. In other words, the substantial resistance value of the high-resistance element 6 is determined without much variation depending on the state of occurrence of the glass-rich portion of the high-resistance element surface layer.
斯る実質的な抵抗値は、厚膜高抵抗体6全体の
抵抗値(酸化ルテニウム成分とガラス成分との混
合比により決まる所期の抵抗値)より若干低くな
るが、上述のように実質的な抵抗値は、表面層を
除いた酸化ルテニウム成分を含有する部分で決ま
るので、ガラス成分が多く含まれる部分の発生状
態によるばらつきは小さく、ほぼ一定の値が得ら
れる。 Although such a substantial resistance value is slightly lower than the resistance value of the entire thick-film high-resistance element 6 (the desired resistance value determined by the mixing ratio of the ruthenium oxide component and the glass component), as described above, the substantial resistance value Since the resistance value is determined by the portion containing the ruthenium oxide component excluding the surface layer, there is little variation depending on the state of occurrence of the portion containing a large amount of glass component, and a substantially constant value can be obtained.
この厚膜高抵抗体6の抵抗値の低下は、所期の
抵抗値に比して、極めて小さいものであるが、低
下する値はほぼ一定であるので、必要であれば、
この抵抗値の低下を予め補正することは容易であ
る。例えば、高抵抗体ペースト6′の印刷形成時
の面積を所期の大きさより、若干大きめにする方
法が考えられる。 This decrease in the resistance value of the thick-film high-resistance element 6 is extremely small compared to the intended resistance value, but since the decrease value is almost constant, if necessary,
It is easy to correct this decrease in resistance value in advance. For example, a method can be considered in which the area of the high-resistance paste 6' is made slightly larger than the intended size.
(ト) 発明の効果
本発明によれば、厚膜抵抗体の表面層が結着剤
を多く含んだものになつても、低抵抗体の存在に
より斯る抵抗体中を流れる電流はそのような表面
層をほとんど経由しないので、ほぼ所期の抵抗値
を得ることができ、また、抵抗値のばらつきも少
ない。さらに、上記抵抗体は厚膜回路の他の同種
抵抗形成時に同時に作成し得るので、上記低抵抗
体作成のために工程が増えることもない。さらに
また、導体ペーストとして銅ペースト等の安価な
卑金属ペーストを使用することも可能となる。(G) Effects of the Invention According to the present invention, even if the surface layer of a thick-film resistor contains a large amount of binder, the current flowing through the resistor will be reduced due to the presence of the low-resistance element. Since almost no surface layer is passed through, almost the desired resistance value can be obtained, and there is little variation in the resistance value. Furthermore, since the above-mentioned resistor can be produced simultaneously with the formation of other similar resistors in the thick film circuit, there is no need to increase the number of steps for producing the above-mentioned low-resistance element. Furthermore, it is also possible to use an inexpensive base metal paste such as copper paste as the conductor paste.
第1図及び第2図は従来例を示す側面図、第3
図乃至第7図は本発明の一実施例を説明するため
の側面図である。
5……厚膜低抵抗体、6……厚膜高抵抗体、6
a……表面層(第1の層)、6b……底面層(第
2の層)、7……厚膜導体。
Figures 1 and 2 are side views showing the conventional example;
7 to 7 are side views for explaining one embodiment of the present invention. 5... Thick film low resistance element, 6... Thick film high resistance element, 6
a... Surface layer (first layer), 6b... Bottom layer (second layer), 7... Thick film conductor.
Claims (1)
する抵抗体ペースト5′,5′を基板4上に所定の
間隔を設けて印刷、焼成した一対の厚膜低抵抗体
5,5と、 金属または金属酸化物と結着剤とを主成分とす
る抵抗体ペースト6′を両端部が夫々前記一対の
厚膜低抵抗体5,5上に位置するように前記基板
4上に印刷、焼成し、且つ結着剤成分を多く含む
第1の層6a及び該第1の層6aの下方に位置す
る金属または金属酸化物成分を多く含む第2の層
6bを有した厚膜高抵抗体6と、 卑金属を主成分とする導体ペーストを、前記両
厚膜抵抗体5,5,6が形成された基板4上に、
その端部が前記厚膜低抵抗体5,5上に位置する
ように印刷、焼成した厚膜導体7と、 を備え、 前記厚膜低抵抗体5,5と前記厚膜高抵抗体6
の第2の層6bとで電流路が形成されることを特
徴とする厚膜回路。[Scope of Claims] 1. A pair of thick film resistor pastes 5', 5' mainly composed of a metal or metal oxide and a binder are printed and fired on a substrate 4 at a predetermined distance. The resistors 5, 5 and the resistor paste 6' mainly composed of a metal or a metal oxide and a binder are placed so that both ends thereof are located on the pair of thick film low resistance elements 5, 5, respectively. A first layer 6a printed and fired on the substrate 4 and containing a large amount of a binder component, and a second layer 6b containing a large amount of metal or metal oxide component located below the first layer 6a. The thick film high resistance element 6 and a conductive paste mainly composed of base metal are placed on the substrate 4 on which both the thick film resistors 5, 5, and 6 are formed.
A thick film conductor 7 printed and fired such that its end portions are located on the thick film low resistance elements 5, 5, and the thick film low resistance elements 5, 5 and the thick film high resistance element 6.
A thick film circuit characterized in that a current path is formed with the second layer 6b.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57190142A JPS5979563A (en) | 1982-10-28 | 1982-10-28 | Thick film circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57190142A JPS5979563A (en) | 1982-10-28 | 1982-10-28 | Thick film circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5979563A JPS5979563A (en) | 1984-05-08 |
| JPH0346961B2 true JPH0346961B2 (en) | 1991-07-17 |
Family
ID=16253096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57190142A Granted JPS5979563A (en) | 1982-10-28 | 1982-10-28 | Thick film circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5979563A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60246602A (en) * | 1984-05-21 | 1985-12-06 | ロ−ム株式会社 | Resistance part and method of producing same |
| JPS63187601A (en) * | 1987-01-30 | 1988-08-03 | 株式会社日立製作所 | Thick film circuit board and its manufacturing method |
| US5169679A (en) * | 1988-10-11 | 1992-12-08 | Delco Electronics Corporation | Post-termination apparatus and process for thick film resistors of printed circuit boards |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5543810A (en) * | 1978-09-22 | 1980-03-27 | Hitachi Ltd | Thick film resistor |
-
1982
- 1982-10-28 JP JP57190142A patent/JPS5979563A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5979563A (en) | 1984-05-08 |
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