JPH0370328B2 - - Google Patents
Info
- Publication number
- JPH0370328B2 JPH0370328B2 JP57093135A JP9313582A JPH0370328B2 JP H0370328 B2 JPH0370328 B2 JP H0370328B2 JP 57093135 A JP57093135 A JP 57093135A JP 9313582 A JP9313582 A JP 9313582A JP H0370328 B2 JPH0370328 B2 JP H0370328B2
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- transparent conductive
- sputtering
- light transmittance
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
【発明の詳細な説明】
本発明は、金属インジウムを主成分とするター
ゲツト材料を用いたスパツタリング法により透明
導電膜を形成する方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a transparent conductive film by a sputtering method using a target material containing metallic indium as a main component.
このような方法で透明導電膜を形成する場合、
従来は、予め被着形成する基板を加熱しておき、
そこに酸素とアルゴンを導入してスパツタリング
を行なう方法や、酸素とアルゴンを導入してスパ
ツタリングを行ない薄膜を形成した後に、酸化雰
囲気中で加熱処理して透明導電膜とする方法が行
なわれている。 When forming a transparent conductive film using this method,
Conventionally, the substrate to be adhered to is heated in advance,
There is a method of introducing oxygen and argon to perform sputtering, or a method of introducing oxygen and argon and performing sputtering to form a thin film, and then heat-treating it in an oxidizing atmosphere to form a transparent conductive film. .
しかしながら、これらの方法では、低抵抗、高
光透過率の膜を得るためには被着形成基板を160
〜350℃に加熱する必要があり、130℃以下の基板
温度で低抵抗かつ高光透過率の透明導電膜を再現
性良く形成することは困難であつた。 However, in these methods, in order to obtain a film with low resistance and high light transmittance, the deposition substrate must be heated to 160 mm.
It is necessary to heat the substrate to ~350°C, and it has been difficult to form a transparent conductive film with low resistance and high light transmittance with good reproducibility at a substrate temperature of 130°C or lower.
本発明は、このような状況に鑑みてなされたも
のであり、その目的は、130℃以下の基板温度で
低抵抗かつ高透光性の透明導電膜を再現性良く被
着形成することが可能な透明導電膜の形成方法を
提供することにある。 The present invention was made in view of these circumstances, and its purpose is to enable the formation of a transparent conductive film with low resistance and high transparency with good reproducibility at a substrate temperature of 130°C or less. An object of the present invention is to provide a method for forming a transparent conductive film.
このような目的を達成するために、本発明は、
一酸化二窒素または二酸化窒素の少なくとも一方
を含む酸化性ガス雰囲気中で反応性スパツタリン
グを行なうものである。 In order to achieve such an objective, the present invention
Reactive sputtering is performed in an oxidizing gas atmosphere containing at least one of dinitrogen monoxide and nitrogen dioxide.
以下、実施例を用いて本発明を詳細に説明す
る。 Hereinafter, the present invention will be explained in detail using Examples.
先ず、電極を兼ねた基板ホルダーに所定のガラ
ス基板を搭載し、これに、金属インジウムに金属
スズを５重量％含んだ合金からなるターゲツトを
装着した対向電極を対向させる。次いで、チヤン
バー内を１×10-6Torr程度の高真空にした後一
酸化二窒素を14％含むアルゴンガス雰囲気で満た
し、その圧力を１×10-3Torrに保持しながら電
極間に高周波電界を印加して高周波スパツタリン
グを行なつた。基板の温度は60℃であつた。 First, a predetermined glass substrate is mounted on a substrate holder that also serves as an electrode, and a counter electrode equipped with a target made of an alloy of metal indium and metal tin containing 5% by weight is placed to face the glass substrate. Next, the inside of the chamber is brought to a high vacuum of about 1×10 -6 Torr, then filled with an argon gas atmosphere containing 14% dinitrogen monoxide, and a high-frequency electric field is applied between the electrodes while maintaining the pressure at 1×10 -3 Torr. High frequency sputtering was performed by applying . The temperature of the substrate was 60°C.
この結果、ガラス基板上に、比抵抗が１×
10-3Ω・cm以下で光透過率が90％以上の透明導電
膜が極めて良い再現性で得られた。 As a result, the specific resistance is 1× on the glass substrate.
A transparent conductive film with a light transmittance of 90% or more at 10 -3 Ω·cm or less was obtained with extremely good reproducibility.
この場合、上記雰囲気ガスの成分比と得られる
透明導電膜の比抵抗および光透過率との関係を第
１図に示す。即ち同図において、横軸には一酸化
二窒素とアルゴンとの混合雰囲気ガス中に占める
一酸化二窒素の重量比をとり、図中、実線イで比
抵抗を、破線ロで光透過率をそれぞれ示してい
る。 In this case, the relationship between the component ratio of the atmospheric gas and the resistivity and light transmittance of the resulting transparent conductive film is shown in FIG. That is, in the same figure, the horizontal axis shows the weight ratio of dinitrogen monoxide in the mixed atmospheric gas of dinitrogen monoxide and argon, and the solid line A represents the specific resistance, and the broken line B represents the light transmittance. are shown respectively.
これに対し、従来の酸素を含んだアルゴンガス
雰囲気中で形成した場合について同様の関係を示
したものが第２図である。即ち、同図においては
横軸は酸素とアルゴンとの混合ガス中に占める酸
素の重量比を表わしている。 On the other hand, FIG. 2 shows a similar relationship in the case of formation in a conventional argon gas atmosphere containing oxygen. That is, in the figure, the horizontal axis represents the weight ratio of oxygen in the mixed gas of oxygen and argon.
第２図から、従来の酸素を用いた方法では光透
過率が90％以上の膜を形成するには雰囲気ガス中
に占める酸素量を９重量％以上としなければなら
ないが、酸素量を増加させると一方で比抵抗が増
大し、低抵抗の膜を形成することができないこと
が分る。特に、比抵抗が１×10-3Ω・cm以下で光
透過率が90％以上の膜を得ることは不可能であ
る。 From Figure 2, in the conventional method using oxygen, in order to form a film with a light transmittance of 90% or more, the amount of oxygen in the atmospheric gas must be 9% by weight or more, but increasing the amount of oxygen On the other hand, it can be seen that the specific resistance increases, making it impossible to form a low-resistance film. In particular, it is impossible to obtain a film with a specific resistance of 1×10 -3 Ω·cm or less and a light transmittance of 90% or more.
これに対し、本発明によれば、第１図から明ら
かなように低抵抗・高透光性の膜を得るための雰
囲気ガス成分について十分に大きな条件裕度があ
り、比抵抗が１×10-3Ω・cm以下で光透過率が90
％以上の膜も容易に形成できる。 On the other hand, according to the present invention, as is clear from FIG. -3 Ω・cm or less, light transmittance is 90
% or more can be easily formed.
なお、上述した実施例ではアルゴンガスに一酸
化二窒素を混合した酸化性ガスを雰囲気ガスとし
て用いたが、一酸化二窒素の代りに二酸化窒素を
用いても同様の効果を得ることができる。 In the above embodiment, an oxidizing gas consisting of argon gas mixed with dinitrogen monoxide was used as the atmospheric gas, but the same effect can be obtained by using nitrogen dioxide instead of dinitrogen monoxide.
また、上述した実施例ではターゲツト材料とし
てインジウムに５重量％のスズを含むものを用い
たが、このインジウムとスズの重量比は、85：15
〜97：３程度の範囲内であれば同様に良好な特性
の透明導電膜を得ることができた。 In addition, in the above-mentioned example, indium containing 5% by weight of tin was used as the target material, but the weight ratio of indium to tin was 85:15.
If the ratio was within the range of about 97:3, a transparent conductive film with similarly good characteristics could be obtained.
更に、例えばカラー撮像管においては、ガラス
基板に有機樹脂材料からなる色分解フイルタを被
着形成し、その上に同じく有機樹脂材料からなる
接着剤を介して薄いガラス板を設け、その上に透
明導電膜が形成されるが、本発明はこのような有
機樹脂材料を内蔵したガラス基板を用いる場合に
適用しても同様の効果を得ることができることは
言うまでもない。 Furthermore, in a color image pickup tube, for example, a color separation filter made of an organic resin material is adhered to a glass substrate, a thin glass plate is placed on top of it with an adhesive also made of an organic resin material, and a transparent Although a conductive film is formed, it goes without saying that the same effect can be obtained even when the present invention is applied to a glass substrate containing such an organic resin material.
また、上述した実施例においては、高周波スパ
ツタリング法を用いた場合についてのみ説明した
が、本発明はこれに限定されるものではなく、そ
の他のスパツタリング法、例えばDCスパツタリ
ング、四極スパツタリング、マグネトロン型スパ
ツタリング等の各種スパツタリング装置を用いた
場合に適用しても同様の効果を得ることができ
る。 Further, in the above-mentioned embodiments, only the case where the high frequency sputtering method was used was explained, but the present invention is not limited to this, and other sputtering methods such as DC sputtering, quadrupole sputtering, magnetron type sputtering, etc. Similar effects can be obtained even when various types of sputtering devices are used.
以上説明したように、本発明によれば、一酸化
二窒素または二酸化窒素の少なくとも一方を含む
酸化性雰囲気ガス中で金属インジウムを主成分と
するターゲツト材料を用いてスパツタリングを行
なうことにより、低抵抗かつ高透光性の透明導電
膜を極めて良好な再現性で形成することができる
という効果を有する。 As explained above, according to the present invention, sputtering is performed using a target material containing metallic indium as a main component in an oxidizing atmospheric gas containing at least one of dinitrogen monoxide and nitrogen dioxide, thereby achieving low resistance. Moreover, it has the effect that a highly transparent conductive film can be formed with extremely good reproducibility.
第１図は本発明の一実施例により得られる透明
導電膜の比抵抗および光透過率の酸化性雰囲気ガ
ス成分依存性を示すグラフ、第２図は従来法によ
る場合の同様の関係を示すグラフである。
FIG. 1 is a graph showing the dependence of resistivity and light transmittance on oxidizing atmospheric gas components of a transparent conductive film obtained by an embodiment of the present invention, and FIG. 2 is a graph showing a similar relationship when using a conventional method. It is.
Claims (1)
分とするターゲツト材料を用いた反応性スパツタ
リング法により所定の基板上に透明導電膜を被着
形成する透明導電膜の形成方法において、酸化性
ガスとして一酸化二窒素または二酸化窒素の少な
くとも一方を含むガスを用いることを特徴とする
透明導電膜の形成方法。1 In a method for forming a transparent conductive film in which a transparent conductive film is deposited on a predetermined substrate by a reactive sputtering method using a target material containing metallic indium as a main component in an oxidizing gas atmosphere, one A method for forming a transparent conductive film, the method comprising using a gas containing at least one of dinitrogen oxide and nitrogen dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9313582A JPS58212009A (en) | 1982-06-02 | 1982-06-02 | Method of forming transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9313582A JPS58212009A (en) | 1982-06-02 | 1982-06-02 | Method of forming transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58212009A JPS58212009A (en) | 1983-12-09 |
| JPH0370328B2 true JPH0370328B2 (en) | 1991-11-07 |
Family
ID=14074074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9313582A Granted JPS58212009A (en) | 1982-06-02 | 1982-06-02 | Method of forming transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58212009A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5813006B2 (en) * | 1975-07-14 | 1983-03-11 | 松下電器産業株式会社 | Sankabutsuhandoutaihakumakuno Seizouhouhou |
| JPS54130497A (en) * | 1978-03-31 | 1979-10-09 | Agency Of Ind Science & Technol | Production of indium oxide ( ) film |
-
1982
- 1982-06-02 JP JP9313582A patent/JPS58212009A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58212009A (en) | 1983-12-09 |
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