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JPH0411966B2 - - Google Patents
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JPH0411966B2 - - Google Patents

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Publication number
JPH0411966B2
JPH0411966B2 JP57175372A JP17537282A JPH0411966B2 JP H0411966 B2 JPH0411966 B2 JP H0411966B2 JP 57175372 A JP57175372 A JP 57175372A JP 17537282 A JP17537282 A JP 17537282A JP H0411966 B2 JPH0411966 B2 JP H0411966B2
Authority
JP
Japan
Prior art keywords
layer
gold
contact
base layer
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57175372A
Other languages
Japanese (ja)
Other versions
JPS5966013A (en
Inventor
Tomomi Umemoto
Koji Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP17537282A priority Critical patent/JPS5966013A/en
Publication of JPS5966013A publication Critical patent/JPS5966013A/en
Publication of JPH0411966B2 publication Critical patent/JPH0411966B2/ja
Granted legal-status Critical Current

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  • Contacts (AREA)

Description

【発明の詳細な説明】 本発明は、リードスイツチ用接点に関する。[Detailed description of the invention] The present invention relates to contacts for reed switches.

従来、リードスイツチ用接点は、金系拡散接
点、金合金接点、あるいは白金族金属接点が使用
されているが、いずれも接点層の厚さが数ミクロ
ン程度であるため、電流断続によつて接点の消
耗、転移等が起こり、接点層の厚いバルク接点を
もつ他の電磁リレーに比して寿命が短かいという
欠点がある。特に、50ボルト100mA程度の抵抗
負荷であつてケーブルを伴なうような負荷条件で
はシヨートアークが著しく発生し、接点転移が局
部的に発生し、一方の接点に穴が形成され、他方
の接点に突起が生じるため、少ない動作回数で接
触不良や開離不能を起こしやすい。これを防止す
るため、金硬質合金のメツキ層をリード片に形成
した後、急熱、急冷の特殊な拡散処理を施して、
上記メツキ層をスポンジ状にすることによつて、
上述のシヨートアークを伴う負荷条件での寿命を
延ばすことが知られている。しかし、上述の処理
は、メツキ後の熱処理条件が難しく、生産性が悪
い。
Conventionally, gold-based diffusion contacts, gold alloy contacts, or platinum group metal contacts have been used as contacts for reed switches, but in all cases the contact layer thickness is approximately several microns, so the contact cannot be made by interrupting the current. It has the disadvantage that it suffers from wear and dislocation, and has a short lifespan compared to other electromagnetic relays that have bulk contacts with thick contact layers. In particular, under load conditions such as a resistive load of about 50 volts and 100 mA, and a cable is involved, short arcing will occur significantly, contact transfer will occur locally, and a hole will be formed in one contact, and a hole will be formed in the other contact. Due to the protrusions, poor contact and inability to separate easily occur with a small number of operations. In order to prevent this, after forming a plating layer of gold hard alloy on the lead piece, we apply a special diffusion treatment of rapid heating and cooling.
By making the above plating layer spongy,
It is known to extend life under load conditions with short arcs as described above. However, in the above-mentioned process, the heat treatment conditions after plating are difficult and the productivity is poor.

本発明の目的は、上述の従来の欠点を解決し、
シヨートアークの発生する負荷条件下でも長寿命
で、かつ製造容易なリードスイツチ用接点を提供
することにある。
The purpose of the present invention is to solve the above-mentioned conventional drawbacks and
To provide a reed switch contact that has a long life even under load conditions where short arc occurs and is easy to manufacture.

本発明の接点は、リードスイツチのリード片先
端部に錫、亜鉛、カドミウム、鉛又はインジウム
等で後記最上層に対する容積比が30%〜150%の
下地層を形成し、該下地層の上に金または金合金
の最上層が形成されたことを特徴とする。
In the contact of the present invention, a base layer made of tin, zinc, cadmium, lead, indium, etc. is formed at the tip of the lead piece of a reed switch, and has a volume ratio of 30% to 150% with respect to the uppermost layer described below. It is characterized by the formation of a top layer of gold or gold alloy.

次に、本発明について、図面を参照して詳細に
説明する。
Next, the present invention will be explained in detail with reference to the drawings.

第1図は、本発明の一実施例を示す断面図であ
る。すなわち、リード片1の先端部に、金ストラ
イク2を形成し、その上に錫の下地層3を形成
し、最上層に金コバルトの金合金層4をそれぞれ
メツキにより形成する。金ストライクは、錫の下
地層3の形成を容易ならしめるために設けたもの
である。そして、下地層3は金合金層4に対する
容積比が30〜150%である。これは、後述するよ
うに最上層と下地層の容積比が異なりすぎる場合
は、適当なスポンジ状の層が形成されないと考え
られるため、適当なスポンジ状の層を形成するた
めに、低融点の下地層の厚さを最上層の金又は金
合金層に対して上記範囲に選定した。本実施例の
接点は、以下にのべるようにシヨートアークの発
生する負荷条件(直流50ボルト、100mA抵抗負
荷)で著しく長寿命を有するという効果がある。
FIG. 1 is a sectional view showing one embodiment of the present invention. That is, a gold strike 2 is formed at the tip of the lead piece 1, a tin base layer 3 is formed thereon, and a gold cobalt gold alloy layer 4 is formed on the top layer by plating. The gold strike was provided to facilitate the formation of the tin underlayer 3. The volume ratio of the base layer 3 to the gold alloy layer 4 is 30 to 150%. This is because if the volume ratio of the top layer and the base layer is too different, as will be explained later, an appropriate spongy layer will not be formed. The thickness of the underlayer was selected to be within the above range relative to the uppermost gold or gold alloy layer. The contact of this embodiment has the effect of having a significantly long life under load conditions where short arc occurs (DC 50 volts, 100 mA resistive load), as described below.

上述の効果を確認するため、各種構成の接点を
形成した1対のリード片1を第2図に示すように
ガラス管5で封入したリードスイツチを、シヨー
トアークの発生する負荷条件(直流50ボルト、
100mA抵抗負荷)の下で寿命試験を行なつた。
接点構成は、最上層の金コバルトの金合金層4と
錫の下地層3のメツキ厚をそれぞれ0.3,2.7ミク
ロンとしたA接点、1,2ミクロンとしたB接
点、1.5,1.5ミクロンとしたC接点2,1ミクロ
ンとしたD接点および2.7,0.3ミクロンとしたE
接点の5種類とした。
In order to confirm the above-mentioned effect, a reed switch in which a pair of reed pieces 1 having various configurations of contacts were enclosed in a glass tube 5 as shown in FIG.
A life test was conducted under a 100mA resistive load.
The contact configurations are A contact with plating thickness of the top gold cobalt gold alloy layer 4 and tin underlayer 3 of 0.3 and 2.7 microns, respectively, B contact with 1 and 2 micron plating, and C contact with 1.5 and 1.5 micron plating thickness. Contact 2, D contact with 1 micron and E contact with 2.7, 0.3 micron.
There are five types of contacts.

寿命試験の結果を第3図に示す。第3図は、横
軸に動作回数を取り、縦軸に該動作回数に対する
リードスイツチの累積不良率を示している。なお
曲線A〜Eは、それぞれ上記各種接点に対応した
特性を示し、曲線Fは従来より公知の金とロジウ
ムで構成された接点のリードスイツチの寿命特性
を示す。同図から理解されるように、接点B,
C,Dによるものは、いずれも従来のリードスイ
ツチの5〜10倍の寿命がある。これは、以下のよ
うに考えられる。
The results of the life test are shown in Figure 3. In FIG. 3, the horizontal axis represents the number of operations, and the vertical axis represents the cumulative failure rate of the reed switch with respect to the number of operations. Curves A to E show the characteristics corresponding to the various contacts described above, and curve F shows the life characteristics of a conventionally known reed switch with contacts made of gold and rhodium. As can be understood from the figure, contact B,
Both C and D have a lifespan 5 to 10 times longer than conventional reed switches. This can be considered as follows.

シヨートアークが顕著に発生する負荷条件で
は、従来の接点は接点材の転移が局部に集中し
て、突起や穴の成長が早く、このため少ない動作
回数でリード片材の成分、すなわち鉄やニツケル
等が直接接点表面に露出することにより、接触抵
抗が増大したり、突起と穴とがからみあつて開離
不能を起こすため寿命が短かくなる。これに対
し、本発明に係る接点は、低融点金属層を下地層
として形成して、その上層に上記下地層に極めて
拡散し易い金または金コバルト等の硬質金合金の
層を形成してあるため、ガラス管への封入時の加
熱等により上記2つの層が互に拡散して、スポン
ジ状の拡散層が表面に形成されて、シヨートアー
クが発生しても突起が成長せず、また接点転移お
よび消耗が局部に集中せずに接点面に拡がるため
寿命が延びるものと考えられる。なお、錫層の薄
い接点Aと、逆に錫層の厚い接点Eによるもの
は、両者ともほぼ従来接点と同程度の寿命であつ
た。これは、最上層の金合金層と、錫の下地層と
の体積比が異なり過ぎて適当なスポンジ状の層が
形成され難いためと考えられる。故に下地層は金
合金層に対して容積比で30〜150%程度とするこ
とが良い。
Under load conditions where short arc occurs significantly, in conventional contacts, the transfer of the contact material is concentrated locally, and protrusions and holes grow quickly. When exposed directly to the contact surface, the contact resistance increases, and the protrusion and hole become entangled and cannot be separated, resulting in a shortened lifespan. In contrast, the contact according to the present invention has a low melting point metal layer formed as a base layer, and a layer of gold or a hard gold alloy such as gold cobalt that is extremely easily diffused into the base layer is formed on top of the low melting point metal layer. Therefore, the two layers mentioned above diffuse into each other due to heating during sealing in the glass tube, forming a sponge-like diffusion layer on the surface, preventing protrusions from growing even if shot arc occurs, and preventing contact transfer. It is also believed that the wear and tear is not concentrated locally but spreads over the contact surface, extending the service life. Note that the contact A with a thin tin layer and the contact E with a thick tin layer both had approximately the same lifespan as conventional contacts. This is thought to be because the volume ratio of the top gold alloy layer and the tin underlayer is too different, making it difficult to form a suitable spongy layer. Therefore, the volume ratio of the base layer to the gold alloy layer is preferably about 30 to 150%.

本実施例では、最上層に金コバルト合金を、下
地層に錫を用いたが、最上層には、金ニツケル合
金、金銀合金または金を用いても同様の効果が得
られる。また、下地層には、亜鉛、鉛、インジウ
ム等を用いても良い。
In this embodiment, a gold-cobalt alloy is used for the top layer and tin is used for the underlayer, but the same effect can be obtained by using a gold-nickel alloy, a gold-silver alloy, or gold for the top layer. Moreover, zinc, lead, indium, etc. may be used for the base layer.

なお、リード片の鉄、ニツケル等の素材が直接
表面に露出することを防止するため上述の錫等の
下地層3または金ストライク2のさらに下層に、
前記下地層の金属との拡散係数が、下地層と最上
層の金属との拡散係数よりも低い金属、例えばロ
ジウム、ルテニウム、パラジウム、パラジウムニ
ツケル合金、レニウム、白金、タングステン等の
金属をメツキしてもよい。これにより本発明の効
果をより大とすることができる。
In addition, in order to prevent the material of the lead piece, such as iron or nickel, from being directly exposed to the surface, the base layer 3 of the above-mentioned tin or the like, or a layer further below the gold strike 2, is added.
Plating a metal whose diffusion coefficient with the metal of the underlayer is lower than the diffusion coefficient between the underlayer and the metal of the uppermost layer, such as rhodium, ruthenium, palladium, palladium-nickel alloy, rhenium, platinum, and tungsten. Good too. Thereby, the effect of the present invention can be further enhanced.

以上のように、本発明においては、リード片の
先端部最上層に金又は金合金層を形成し、その下
層に、錫、亜鉛等の下地層を最上層に対して30〜
150%の容積比で形成された構造としたから、該
下地層と最上層の金属の拡散によつてスポンジ状
の接点が形成され、シヨートアークの発生する抵
抗負荷条件下における接点の寿命をいちぢるしく
向上させる効果を有する。
As described above, in the present invention, a gold or gold alloy layer is formed on the top layer of the tip of the lead piece, and a base layer of tin, zinc, etc.
Since the structure is formed with a volume ratio of 150%, a sponge-like contact is formed by diffusion of the metal in the base layer and the top layer, which extends the life of the contact under resistive load conditions where shot arc occurs. It has the effect of significantly improving

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例を示す断面図、第2
図は実験のために作成したリードスイツチを示す
図、第3図は各種接点によるリードスイツチの寿
命試験結果を示す図である。 図において、1…リード片、2…金ストライ
ク、3…錫の下地層、4…金合金層、5…ガラス
管。
FIG. 1 is a cross-sectional view showing one embodiment of the present invention, and FIG.
The figure shows a reed switch prepared for the experiment, and FIG. 3 shows the results of a life test of the reed switch using various contacts. In the figure, 1... lead piece, 2... gold strike, 3... tin base layer, 4... gold alloy layer, 5... glass tube.

Claims (1)

【特許請求の範囲】 1 金ストライクまたは薄い貴金属メツキ層が施
されたリード片先端部に、錫、亜鉛、カドミウ
ム、鉛、インジウムのいずれかを主成分とする金
属により下地層が形成され、 この下地層の上に金または金合金層による最上
層が形成され、 上記下地層の上記最上層に対する容積比は30%
ないし150%である ことを特徴とするリードスイツチ用接点。
[Claims] 1. A base layer is formed of a metal containing tin, zinc, cadmium, lead, or indium as a main component on the tip of the lead piece on which a gold strike or a thin precious metal plating layer is applied. A top layer of gold or gold alloy is formed on the base layer, and the volume ratio of the base layer to the top layer is 30%.
A contact point for a reed switch characterized by 150% or more.
JP17537282A 1982-10-07 1982-10-07 Contact for lead switch Granted JPS5966013A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17537282A JPS5966013A (en) 1982-10-07 1982-10-07 Contact for lead switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17537282A JPS5966013A (en) 1982-10-07 1982-10-07 Contact for lead switch

Publications (2)

Publication Number Publication Date
JPS5966013A JPS5966013A (en) 1984-04-14
JPH0411966B2 true JPH0411966B2 (en) 1992-03-03

Family

ID=15994940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17537282A Granted JPS5966013A (en) 1982-10-07 1982-10-07 Contact for lead switch

Country Status (1)

Country Link
JP (1) JPS5966013A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4846854A (en) * 1971-10-15 1973-07-04

Also Published As

Publication number Publication date
JPS5966013A (en) 1984-04-14

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