JPH0412003B2 - - Google Patents
Info
- Publication number
- JPH0412003B2 JPH0412003B2 JP62151749A JP15174987A JPH0412003B2 JP H0412003 B2 JPH0412003 B2 JP H0412003B2 JP 62151749 A JP62151749 A JP 62151749A JP 15174987 A JP15174987 A JP 15174987A JP H0412003 B2 JPH0412003 B2 JP H0412003B2
- Authority
- JP
- Japan
- Prior art keywords
- varistor
- thick film
- weight
- electrically conductive
- zno
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011521 glass Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- -1 Bi 2 O 3 Chemical class 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1006—Thick film varistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、厚膜バリスタに関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a thick film varistor.
（従来の技術）
従来から、非直線的な電流−電圧特性を持つ２
端子素子で主に衝撃電圧の抑制や雑音吸収、温度
補償等に用いられるものとして厚膜バリスタが知
られている。(Conventional technology) Conventionally, 2
Thick film varistors are known as terminal elements mainly used for suppressing impact voltage, absorbing noise, compensating for temperature, and the like.
この厚膜バリスタとは絶縁基板上に焼成された
銀等の電極の上に、半導体結晶粒としてのZnOと
該半導体結晶粒の結合剤としてのガラスフリツト
とを空気中で焼成したバリスタ層を積層し、その
上に銀電極等を焼成し、該バリスタ層をサンドイ
ツチ状に挟持した構造のものである。 This thick film varistor is made by laminating a varistor layer in which ZnO as semiconductor crystal grains and glass frit as a binder for the semiconductor crystal grains are fired in air on an electrode made of silver or the like fired on an insulating substrate. It has a structure in which silver electrodes and the like are fired on top of the varistor layer, and the varistor layer is sandwiched in a sandwich pattern.
（発明が解決しようとする問題点）
ところで上記厚膜バリスタのバリスタ特性を充
分発揮するには、半導体結晶粒としてのZnOの廻
りに高抵抗の粒界層を形成しなければならず、そ
のためには高価な金属酸化物、例えばBi2O3、
Co2O3、MnO、TiO2、Sb2O3、Cu2O3等を添加物
として添加しなげればならないので、製造コスト
がかなり高くなつていた。(Problems to be Solved by the Invention) By the way, in order to fully exhibit the varistor characteristics of the thick film varistor described above, a grain boundary layer with high resistance must be formed around ZnO as semiconductor crystal grains. is an expensive metal oxide, e.g. Bi 2 O 3 ,
Since Co 2 O 3 , MnO, TiO 2 , Sb 2 O 3 , Cu 2 O 3 and the like must be added as additives, the manufacturing cost has been considerably high.
本発明の目的は、従来に比べ製造コストが安
く、バリスタ特性に優れた厚膜バリスタを提供す
ることにある。 An object of the present invention is to provide a thick film varistor that is cheaper to manufacture than conventional ones and has excellent varistor characteristics.
（問題点を解決するための手段）
本発明の厚膜バリスタは上記目的を達成するた
め、２種類の半導体酸化物を混合し、焼結してな
る電気伝導性酸化物の粉末粒子30〜80重量％と、
これを結合するためのガラス成分70〜20重量％と
を混合した耐熱性絶縁基板上に膜状に焼成したこ
とを特徴としている。(Means for Solving the Problems) In order to achieve the above object, the thick film varistor of the present invention is made by mixing two types of semiconductor oxides and sintering the powder particles of an electrically conductive oxide. weight% and
It is characterized by being baked into a film on a heat-resistant insulating substrate mixed with 70 to 20% by weight of a glass component for bonding.
（作用）
本発明によれば、電気伝導性酸化物は結合剤と
してのガラス成分により取り囲まれ、高抵抗層が
形成され、高価な添加物を不要にするように働く
と共に電気伝導性酸化物、それ自体が安価であ
り、製造コストを下げるようにも働く。(Function) According to the present invention, the electrically conductive oxide is surrounded by a glass component as a binder, forming a high resistance layer, which serves to eliminate the need for expensive additives, and the electrically conductive oxide, As such, it is inexpensive and also works to reduce manufacturing costs.
（実施例） 以下、本発明の実施例について説明する。(Example) Examples of the present invention will be described below.
まず、２種類の半導体酸化物ZnOとFe2O3とを
所定の組成比、すなわち本実施例においては、
ZnO70〜99重量％、Fe2O330〜１重量％となるよ
う正確に秤量し、該原料をボールミル等で混合し
１mmφ〜５mmφにした後乾燥し、その後1100〜
1400℃で0.5〜10時間焼成する。そしてこの焼結
体、すなわちZn−フエライトと称せられる電気
伝導性酸化物を粉砕機にかけて400メツシユ以下
に微粉砕し、10μｍ前後の必要な粒径のみにふる
い分ける。 First, two types of semiconductor oxides, ZnO and Fe 2 O 3 , were mixed at a predetermined composition ratio, that is, in this example,
Weigh accurately so that ZnO is 70-99% by weight and Fe 2 O 3 is 30-1% by weight, and the raw materials are mixed in a ball mill etc. to a size of 1mmφ to 5mmφ, dried, and then
Bake at 1400℃ for 0.5-10 hours. Then, this sintered body, that is, an electrically conductive oxide called Zn-ferrite, is pulverized to 400 mesh or less by a crusher, and then sieved to only the required particle size of about 10 μm.
一方ガラス成分としてのガラスフリツト粉末は
周知のガラス成分、すなわち本実施例においては
ZnOとFe2O3とBaO及びB2O3を所定の組成比にな
るよう計量混合し、1100℃以上の高温で溶融させ
た後、水中に入れて急冷し、所要の粒径まで微粉
砕し生成する。なお、本実施例においてはガラス
フリツト粉末をZnOとFe2O3とBaO及びB2O3で構
成しているが、上記のZn−フエライトとBaO及
びB2O3で構成しても勿論良く、周知のガラスフ
リツト粉末であれば何でも良い。 On the other hand, the glass frit powder as a glass component is a well-known glass component, that is, in this example,
ZnO, Fe 2 O 3 , BaO, and B 2 O 3 are weighed and mixed to a predetermined composition ratio, melted at a high temperature of 1100℃ or higher, then quenched in water and pulverized to the required particle size. and generate. In this example, the glass frit powder is composed of ZnO, Fe 2 O 3 , BaO and B 2 O 3 , but it may of course be composed of the above Zn-ferrite, BaO and B 2 O 3 . Any known glass frit powder may be used.
このようにして生成されたZn−フエライト粉
末粒子30〜80重量％とガラスフリツト粉末粒子70
〜20重量％とを混合し、得られた固形分子にエチ
レンセルロースと溶剤としてのB.C.Aを加えて良
く混練し、ペースト状にして、バリスタペースト
とする。 The thus produced Zn-ferrite powder particles 30-80% by weight and glass frit powder particles 70%
~20% by weight, and add ethylene cellulose and BCA as a solvent to the obtained solid molecules and knead well to form a paste to make a varistor paste.
一方、上記手順と平行して図に示される如く、
アルミナ、フオルステライト、結晶化ガラス等よ
りなる耐熱性絶縁基板１上に、Ag、Au、Pt等よ
りなる導電ペーストをスクリーン印刷法により印
刷し、焼成して下部電極２として積層する。 On the other hand, as shown in the figure in parallel with the above procedure,
A conductive paste made of Ag, Au, Pt, etc. is printed on a heat-resistant insulating substrate 1 made of alumina, forsterite, crystallized glass, etc. by a screen printing method, and is fired to form a lower electrode 2.
そして該下部電極２上に前述したバリスタペー
ストをスクリーン印刷法で印刷し、乾燥後700〜
1000℃で焼成して、バリスタ層３として積層す
る。 Then, the above-mentioned varistor paste is printed on the lower electrode 2 by screen printing method, and after drying,
It is fired at 1000°C and laminated as the varistor layer 3.
その後前述と同様な方法により、バリスタ層３
の上に上部電極４を積層する。 After that, the varistor layer 3 is
An upper electrode 4 is laminated thereon.
このようにして得られた図に示されるようなサ
ンドイツチ型の厚膜バリスタ５は、その形成の際
に、結合剤としてのガラス成分が、Zn−フエラ
イトと言う電気伝導性粉末粒子の廻りを取り囲み
高抵抗層を形成するので、Bi2O3、Co2O3といつ
たような高価な金属酸化物が不要となると共に、
半導体酸化物として用いられるFe2O3が、従来そ
の全体を占めていたZnOに比べて安価なことも伴
い、全体として大幅なコストダウンが可能とな
る。 In the Sanderscharch-type thick film varistor 5 shown in the figure thus obtained, during its formation, a glass component as a binder surrounds electrically conductive powder particles called Zn-ferrite. Since it forms a high resistance layer, expensive metal oxides such as Bi 2 O 3 and Co 2 O 3 are not required, and
Fe 2 O 3 used as a semiconductor oxide is cheaper than ZnO, which has conventionally occupied the entire range, making it possible to significantly reduce the overall cost.
因に本発明者の実験によると、ZnO90重量％と
Fe2O310重量％とを上述のガラスフリツト粉末粒
子、エチレンセルロース、B.C.Aと混合して厚膜
バリスタを形成し、１ｍＡ流れる時の電圧値E1、
10ｍＡ流れる時の電圧値E10を計測し、電圧非直
線指数αを算出したところ、
E1＝19.3V
E10＝28.2V
α＝６となり、バリスタ特性の優れた厚膜バリ
スタが得られるということが実証された。 According to the inventor's experiments, 90% by weight of ZnO
A thick film varistor is formed by mixing 10% by weight of Fe 2 O 3 with the above-mentioned glass frit powder particles, ethylene cellulose, and BCA, and the voltage value E 1 when 1 mA flows,
When the voltage value E 10 when 10 mA flows was measured and the voltage non-linearity index α was calculated, E 1 = 19.3V E 10 = 28.2V α = 6, which indicates that a thick film varistor with excellent varistor characteristics can be obtained. Proven.
また、本発明者の実験から、Zn−フエライト
を形成することになる半導体酸化物としてのZnO
の重量％が70重量％以上となると、バリスタ電圧
が低くなるということが判明した。 In addition, from experiments conducted by the present inventor, ZnO as a semiconductor oxide that forms Zn-ferrite has been found.
It has been found that when the weight percent of is 70 weight percent or more, the varistor voltage becomes low.
また、上記実施例においては、Ｎ型半導体酸化
物としてのZnOとFe2O3とから電気伝導性酸化物
としてのZn−フエライトを生成する例を示して
いるが、次に示すような安価なＮ型半導体酸化
物、例えばTi2O3、CrO3、MoO2、WO2、
BaMoO3、CaMoO3、SrCrO3、CaCrO3等の中か
ら２種類を混合して焼結して電気伝導性酸化物を
生成するようにし、該電気伝導性酸化物により厚
膜ハリスタを構成するようにしても勿論良い。 In addition, in the above example, an example is shown in which Zn-ferrite as an electrically conductive oxide is produced from ZnO as an N-type semiconductor oxide and Fe 2 O 3 , but an inexpensive method such as the one shown below is shown. N-type semiconductor oxides, such as Ti 2 O 3 , CrO 3 , MoO 2 , WO 2 ,
Two types of BaMoO 3 , CaMoO 3 , SrCrO 3 , CaCrO 3 , etc. are mixed and sintered to generate an electrically conductive oxide, and the electrically conductive oxide is used to form a thick film harristor. Of course it's fine.
さらにまた、空気中で焼結するとその特性が発
揮できない、Ｐ型半導体酸化物としてのCu2Oと
TiOとを不活性ガス、例えば窒素若しくはアルゴ
ン中で混合焼成し、電気伝導性酸化物Cu2O−
TiOを生成するようにし、厚膜バリスタを構成す
るようにすることも可能である。 Furthermore, Cu 2 O as a P-type semiconductor oxide cannot exhibit its properties when sintered in air.
TiO is mixed and fired in an inert gas such as nitrogen or argon to form an electrically conductive oxide Cu 2 O−
It is also possible to generate TiO and configure a thick film varistor.
なお、上記実施例の厚膜バリスタは、図に示さ
れる如くサンドイツチ型であるが、プレーナー型
にも適用できるというのはいうまでもない。 The thick film varistor of the above embodiment is of the Sanderschich type as shown in the figure, but it goes without saying that it can also be applied to a planer type.
（発明の効果）
以上のような本発明によれば、高価な添加物を
加えることなく、安価な電気伝導性酸化物により
優れたバリスタ特性を発揮できる製造コストのか
からない厚膜バリスタを提供することができる。(Effects of the Invention) According to the present invention as described above, it is possible to provide a thick film varistor that can exhibit excellent varistor characteristics using an inexpensive electrically conductive oxide without adding expensive additives and is inexpensive to manufacture. I can do it.
図は本発明の一実施例を示す厚膜バリスタの概
略断面図である。
１……耐熱性絶縁基板、５……厚膜バリスタ。
The figure is a schematic cross-sectional view of a thick film varistor showing one embodiment of the present invention. 1... Heat-resistant insulating substrate, 5... Thick film varistor.
Claims (1)
る電気伝導性酸化物の粉末粒子30〜80重量％と、
これを結合するためのガラス成分70〜20重量％と
を混合して耐熱性絶縁基板上に膜状に焼成したこ
とを特徴とする厚膜バリスタ。1 30 to 80% by weight of electrically conductive oxide powder particles obtained by mixing two types of semiconductor oxides and sintering them;
A thick film varistor characterized in that it is mixed with 70 to 20% by weight of a glass component for bonding and fired into a film on a heat-resistant insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62151749A JPS63314801A (en) | 1987-06-18 | 1987-06-18 | Thick film varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62151749A JPS63314801A (en) | 1987-06-18 | 1987-06-18 | Thick film varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63314801A JPS63314801A (en) | 1988-12-22 |
| JPH0412003B2 true JPH0412003B2 (en) | 1992-03-03 |
Family
ID=15525444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62151749A Granted JPS63314801A (en) | 1987-06-18 | 1987-06-18 | Thick film varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63314801A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3293403B2 (en) | 1995-05-08 | 2002-06-17 | 松下電器産業株式会社 | Lateral high resistance agent for zinc oxide varistor, zinc oxide varistor using the same, and method of manufacturing the same |
| KR101199194B1 (en) * | 2010-10-28 | 2012-11-07 | 엘지이노텍 주식회사 | Paste compisition for front electrode of solar cell including the same, and solar sell |
-
1987
- 1987-06-18 JP JP62151749A patent/JPS63314801A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63314801A (en) | 1988-12-22 |
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