JPH0412004B2 - - Google Patents
Info
- Publication number
- JPH0412004B2 JPH0412004B2 JP62151750A JP15175087A JPH0412004B2 JP H0412004 B2 JPH0412004 B2 JP H0412004B2 JP 62151750 A JP62151750 A JP 62151750A JP 15175087 A JP15175087 A JP 15175087A JP H0412004 B2 JPH0412004 B2 JP H0412004B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- varistor
- electrically conductive
- zno
- thick film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011521 glass Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 20
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 11
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 8
- 229910000859 α-Fe Inorganic materials 0.000 description 12
- 239000000203 mixture Substances 0.000 description 9
- 229910011255 B2O3 Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- AYTAKQFHWFYBMA-UHFFFAOYSA-N chromium dioxide Chemical compound O=[Cr]=O AYTAKQFHWFYBMA-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910009973 Ti2O3 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- DZKDPOPGYFUOGI-UHFFFAOYSA-N tungsten dioxide Inorganic materials O=[W]=O DZKDPOPGYFUOGI-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1006—Thick film varistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、厚膜バリスタに関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a thick film varistor.
（従来の技術）
従来から、非直線的な電流−電圧特性を持つ２
端子素子で主に衝撃電圧の抑制や雑音吸収、温度
補償等に用いられるものとして厚膜バリスタが知
られている。(Conventional technology) Conventionally, 2
Thick film varistors are known as terminal elements mainly used for suppressing impact voltage, absorbing noise, compensating for temperature, and the like.
この厚膜バリスタとは絶縁基板上に焼成された
銀等の電極の上に、半導体結晶粒としてのZnOと
該半導体結晶粒の結合剤としてのガラスフリツト
とを空気中で焼成したバリスタ層を積層し、その
上に銀電極等を焼成し、該バリスタ層をサンドイ
ツチ状に挟持した構造のものである。 This thick film varistor is made by laminating a varistor layer in which ZnO as semiconductor crystal grains and glass frit as a binder for the semiconductor crystal grains are fired in air on an electrode made of silver or the like fired on an insulating substrate. It has a structure in which silver electrodes and the like are fired on top of the varistor layer, and the varistor layer is sandwiched in a sandwich pattern.
（発明が解決しようとする問題点）
ところで、上記厚膜バリスタを構成するガラス
フリツト中の酸化ホウ素（B2O3）はZnO等の酸
化物を溶解する特性を有しており、よつて上記
ZnO等の半導体酸化物とガラスフリツトとを混合
焼成すると、上述の如く、酸化ホウ素（B2O3）
が半導体酸化物を溶解してしまうので、そのバリ
スタ特性が極めて不安定になつてしまうという問
題点があつた。(Problems to be Solved by the Invention) By the way, boron oxide (B 2 O 3 ) in the glass frit constituting the thick film varistor has the property of dissolving oxides such as ZnO, and therefore the above-mentioned
When a semiconductor oxide such as ZnO and glass frit are mixed and fired, as mentioned above, boron oxide (B 2 O 3 )
There was a problem in that the varistor characteristics became extremely unstable because the semiconductor oxide was dissolved.
本発明の目的は、安定したバリスタ特性を発揮
する厚膜バリスタを提供することにある。 An object of the present invention is to provide a thick film varistor that exhibits stable varistor characteristics.
（問題点を解決するための手段）
本発明の厚膜バリスタは上記目的を達成するた
めに、２種類の半導体酸化物を混合し、焼結して
なる電気伝導性酸化物の粉末粒子と、これを結合
するための酸化バリウム（BaO）と酸化ホウ素
（B2O3）と上記電気伝導性酸化物若しくは上記２
種類の半導体酸化物とから成るガラス成分とでバ
リスタ膜が構成されていることを特徴とする。(Means for Solving the Problems) In order to achieve the above object, the thick film varistor of the present invention includes powder particles of an electrically conductive oxide obtained by mixing and sintering two types of semiconductor oxides; Barium oxide (BaO) and boron oxide (B 2 O 3 ) and the above-mentioned electrically conductive oxide or the above-mentioned 2
The varistor film is characterized in that the varistor film is constituted by a glass component consisting of various semiconductor oxides.
（作用）
本発明によれば、ガラス成分中に予め添加され
る、２種類の半導体酸化物を混合して焼結してな
る電気伝導性酸化物、若しくは上記２種類の半導
体酸化物は予めガラス成分中の酸化ホウ素
（B2O3）により充分溶解され、新たに混合する２
種類の半導体酸化物の焼結よりなる電気伝導性酸
化物の粉末粒子をほとんど溶解させないように働
く。(Function) According to the present invention, an electrically conductive oxide obtained by mixing and sintering two types of semiconductor oxides, which is added in advance to a glass component, or the above two types of semiconductor oxides are added to a glass component in advance. Boron oxide (B 2 O 3 ) in the ingredients sufficiently dissolves the 2
The sintered type of semiconductor oxide acts to hardly dissolve the electrically conductive oxide powder particles.
（実施例） 以下、本発明の実施例について説明する。(Example) Examples of the present invention will be described below.
まず、２種類の半導体酸化物ZnOとFe2O3とを
所定の組成比、すなわち本実施例においては、
ZnO70〜99重量％、Fe2O330〜１重量％となるよ
うに正確に秤量し、該原料をボールミル等で混合
し１mmφ〜５mmφにした後乾燥し、その後1100〜
1400℃で0.5〜10時間焼成する。そしてこの焼結
体、すなわちZn−フエライトと称せられる電気
伝導性酸化物を粉砕機にかけて400メツシユ以下
に微粉砕し、10μｍ前後の必要な粒径のみにふる
い分ける。 First, two types of semiconductor oxides, ZnO and Fe 2 O 3 , were mixed at a predetermined composition ratio, that is, in this example,
Weigh accurately so that ZnO is 70-99% by weight and Fe 2 O 3 is 30-1% by weight, mixed with a ball mill etc. to a size of 1 mmφ to 5 mmφ, dried, and then heated to 1100 mmφ to 5 mmφ.
Bake at 1400℃ for 0.5-10 hours. Then, this sintered body, that is, an electrically conductive oxide called Zn-ferrite, is pulverized to 400 mesh or less by a crusher, and then sieved to only the required particle size of about 10 μm.
一方ガラス成分としてのガラスフリツト粉末
は、本実施例においてはZnOとFe2O3とBaO及び
B2O3とで構成され、所定の組成比、すなわち
ZnO40〜10重量％、Fe2O310〜１重量％、BaO45
〜10重量％、B2O350〜25重量％になるように計
量混合され、1100℃以上の高温で溶融された後、
水中で急冷され、所要の粒径まで微粉砕され生成
される。ここで上記ZnOとFe2O3との組成比は、
前述のZn−フエライトを生成するZnOとFe2O3と
の組成比、例えばZnOとFe2O3とが８：２の割合
であるならば、それと同じ割合となつている。こ
のように、本発明においては、ガラス成分中に
ZnOやFe2O3等の酸化物を予め混入しておき、
B2O3がZnOやFe2O3等を充分溶解し得るようにし
ている。そして共に混入されるBaOは、ガラス
の融点の調整のために用いられている。斯くの如
くして生成されたZn−フエライト粉末粒子30〜
80重量％とガラスフリツト粉末粒子70〜20重量％
とを混合し、得られた固形分子にエチレンセルロ
ースと溶剤としてのB.C.Aを加えて良く混練し、
ペースト状にして、バリスタペーストとする。 On the other hand, the glass frit powder as the glass component in this example contains ZnO, Fe 2 O 3 , BaO and
B 2 O 3 at a predetermined composition ratio, i.e.
ZnO40-10% by weight, Fe 2 O 3 10-1% by weight, BaO45
~10% by weight, B2O3 50~25% by weight, and after being melted at a high temperature of 1100℃ or higher,
It is rapidly cooled in water and pulverized to the required particle size. Here, the composition ratio of ZnO and Fe 2 O 3 is
If the composition ratio of ZnO and Fe 2 O 3 that produces the above-mentioned Zn-ferrite is 8:2, for example, the ratio is the same as that of ZnO and Fe 2 O 3 . In this way, in the present invention, the glass component contains
Mix oxides such as ZnO and Fe 2 O 3 in advance,
This allows B 2 O 3 to sufficiently dissolve ZnO, Fe 2 O 3 and the like. BaO, which is also mixed in, is used to adjust the melting point of the glass. Zn-ferrite powder particles produced in this way
80% by weight and glass frit powder particles 70-20% by weight
Add ethylene cellulose and BCA as a solvent to the resulting solid molecules and mix well.
Make it into a paste and use it as barista paste.
一方、上記手順と平行して図に示される如く、
アルミナ、フオルステライト、結晶化ガラス等よ
りなる耐熱性絶縁基板１上に、Ag、Au、Pt等よ
りなる導電ペーストをスクリーン印刷法により印
刷し、焼成して下部電極２として積層する。 On the other hand, as shown in the figure in parallel with the above procedure,
A conductive paste made of Ag, Au, Pt, etc. is printed on a heat-resistant insulating substrate 1 made of alumina, forsterite, crystallized glass, etc. by a screen printing method, and is fired to form a lower electrode 2.
そして該下部電極２上に前述したバリスタペー
ストをスクリーン印刷法で印刷し、乾燥後700〜
1000℃で焼成して、バリスタ層３として積層す
る。 Then, the above-mentioned varistor paste is printed on the lower electrode 2 by screen printing method, and after drying,
It is fired at 1000°C and laminated as the varistor layer 3.
ここで従来だとガラス成分中のB2O3が、Zn−
フエライトを構成するZnOやFe2O3を、その焼成
時に溶解してしまうわけであるが、本発明では前
述のように、ガラス成分中に予めZnOやFe2O3が
添加されており、B2O3が該ZnOやFe2O3を予め充
分溶解しているので、新たにZn−フエライトを
構成するZnOやFe2O3を溶解することはない。 Here, in the conventional case, B 2 O 3 in the glass component is Zn−
ZnO and Fe 2 O 3 that constitute ferrite are dissolved during firing, but in the present invention, as mentioned above, ZnO and Fe 2 O 3 are added to the glass component in advance, and B Since 2 O 3 has sufficiently dissolved the ZnO and Fe 2 O 3 in advance, ZnO and Fe 2 O 3 constituting Zn-ferrite are not newly dissolved.
その後前述と同様な方法により、バリスタ層３
の上に上部電極４を積層する。 After that, the varistor layer 3 is
An upper electrode 4 is laminated thereon.
このようにして得られた図に示されるようなサ
ンドイツチ型の厚膜バリスタ５は、前述の如く、
その焼成時に電気伝導性酸化物（Zn−フエライ
ト）がガラス中にほとんど溶解することがないの
で、安定したバリスタ特性を有するようになる。 As described above, the Sandermanch type thick film varistor 5 as shown in the diagram obtained in this manner has the following characteristics.
Since the electrically conductive oxide (Zn-ferrite) hardly dissolves in the glass during firing, it has stable varistor properties.
因に本発明者の実験によると、ZnO90重量％と
Fe2O310重量％とを上述のガラスフリツト粉末粒
子、エチレンセルロース、B.C.Aと混合して厚膜
バリスタを形成し、１ｍＡ流れる時の電圧値E1、
10ｍＡ流れる時の電圧値E10を計測し、電圧非直
線指数αを算出したところ、
E1＝19.3V
E10＝28.2V
α＝６となり、バリスタ特性の優れた厚膜バリ
スタが得られるということが実証された。 According to the inventor's experiments, 90% by weight of ZnO
A thick film varistor is formed by mixing 10% by weight of Fe 2 O 3 with the above-mentioned glass frit powder particles, ethylene cellulose, and BCA, and the voltage value E 1 when 1 mA flows,
When the voltage value E 10 when 10 mA flows was measured and the voltage non-linearity index α was calculated, E 1 = 19.3V E 10 = 28.2V α = 6, which indicates that a thick film varistor with excellent varistor characteristics can be obtained. Proven.
また上記実施例におけるガラスフリツト粉末
を、Zn−フエライトとBaO及びB2O3とで構成
し、その組成比を、Zn−フエライト40〜10重量
％、BaO45〜10重量％、B2O350〜25重量％とし
て該粉末を生成するようにしても良く、そのよう
にしても先の実施例と同様な効果が得られた。 Further, the glass frit powder in the above example was composed of Zn - ferrite, BaO and B2O3 , and the composition ratio was 40 to 10% by weight of Zn-ferrite, 45 to 10% by weight of BaO, and 50 to 50% by weight of B2O3 . The powder may be produced at a concentration of 25% by weight, and even in this case, the same effect as in the previous example was obtained.
そしてここでも、上記ガラスフリツト中のZn
−フエライトを構成するZnOとFe2O3との組成比
は、電気伝導性酸化物として後に混合することに
なるZn−フエライトのZnOとFe2O3との組成比と
同じ割合となつている。 And here too, Zn in the glass frit mentioned above
-The composition ratio of ZnO and Fe 2 O 3 that constitutes ferrite is the same as the composition ratio of ZnO and Fe 2 O 3 of Zn-ferrite, which will be mixed later as an electrically conductive oxide. .
ところで、上記実施例においては、Ｎ型半導体
酸化物としてのZnOとFe2O3とから電気伝導性酸
化物としてのZn−フエライトを生成する例を示
しているが、次に示すような安価なＮ型半導体酸
化物、例えばTi2O3、CrO2、MoO2、WO2、
BaMoO3、CaMoO3、SrCrO3、CaCrO3等の中か
ら２種類を混合し焼結して電気伝導性酸化物を生
成するようにし、酸化バリウム（BaO）と酸化
ホウ素（B2O3）と該電気伝導性酸化物、若しく
は該電気伝導性酸化物を構成する２種類の半導体
酸化物とより成るガラス成分と混合、焼結するこ
とにより厚膜バリスタを構成するようにしても勿
論良い。 By the way, in the above example, an example is shown in which Zn-ferrite as an electrically conductive oxide is produced from ZnO as an N-type semiconductor oxide and Fe 2 O 3 , but it is possible to generate Zn-ferrite as an electrically conductive oxide. N- type semiconductor oxides, such as Ti2O3 , CrO2 , MoO2 , WO2 ,
Two types of BaMoO 3 , CaMoO 3 , SrCrO 3 , CaCrO 3 , etc. are mixed and sintered to produce an electrically conductive oxide, and barium oxide (BaO) and boron oxide (B 2 O 3 ) are combined. Of course, a thick film varistor may be constructed by mixing and sintering the glass component made of the electrically conductive oxide or two types of semiconductor oxides constituting the electrically conductive oxide.
さらにまた、空気中で焼結するとその特性が発
揮できない、Ｐ型半導体酸化物としてのCu2Oと
TiOとを不活性ガス、例えば窒素若しくはアルゴ
ン中で混合焼成し、電気伝導性酸化物Cu2O−
TiOを生成するようにし、酸化バリウム（BaO）
と酸化ホウ素（B2O3）とCu2O−TiO、若しくは
Cu2Oとより成るガラス成分と混合、焼結するこ
とにより厚膜バリスタを構成するようにすること
も可能である。 Furthermore, Cu 2 O as a P-type semiconductor oxide cannot exhibit its properties when sintered in air.
TiO is mixed and fired in an inert gas such as nitrogen or argon to form an electrically conductive oxide Cu 2 O−
Barium oxide (BaO) to produce TiO
and boron oxide (B 2 O 3 ) and Cu 2 O−TiO, or
It is also possible to configure a thick film varistor by mixing it with a glass component consisting of Cu 2 O and sintering it.
なお、上記実施例の厚膜バリスタは、図に示さ
れる如くサンドイツチ型であるが、プレーナー型
にも適用できるというのはいうまでもない。 The thick film varistor of the above embodiment is of the Sanderschich type as shown in the figure, but it goes without saying that it can also be applied to a planer type.
（発明の効果）
以上のように本発明によれば、ガラス成分中に
予め添加される、２種類の半導体酸化物を混合し
て焼結してなる電気伝導性酸化物、若しくは上記
２種類の半導体酸化物が予めガラス成分中の酸化
ホウ素（B2O3）により充分溶解され、新たに混
合する２種類の半導体酸化物の焼結よりなる電気
伝導性酸化物の粉末粒子をほとんど溶解させない
ようにし得るので、安定したバリスタ特性を有す
る厚膜バリスタを提供することが可能となる。(Effects of the Invention) As described above, according to the present invention, an electrically conductive oxide obtained by mixing and sintering two types of semiconductor oxides, which is added in advance to a glass component, or an electrically conductive oxide made by mixing and sintering two types of semiconductor oxides, or The semiconductor oxide is sufficiently dissolved in advance by boron oxide (B 2 O 3 ) in the glass component, and the newly mixed powder particles of the electrically conductive oxide made by sintering the two types of semiconductor oxides are hardly dissolved. Therefore, it is possible to provide a thick film varistor having stable varistor characteristics.
図は本発明の一実施例を示す厚膜バリスタの概
略断面図である。
３……バリスタ層、５……厚膜バリスタ。
The figure is a schematic cross-sectional view of a thick film varistor showing one embodiment of the present invention. 3... Varistor layer, 5... Thick film varistor.
Claims (1)
る電気伝導性酸化物の粉末粒子と、これを結合す
るための酸化バリウム（BaO）と酸化ホウ素
（B2O3）と上記電気伝導性酸化物若しくは上記２
種類の半導体酸化物とから成るガラス成分とでバ
リスタ膜が構成されていることを特徴とする厚膜
バリスタ。1. Electrically conductive oxide powder particles formed by mixing and sintering two types of semiconductor oxides, barium oxide (BaO) and boron oxide (B 2 O 3 ) for bonding the particles, and the above-mentioned electrically conductive particles. oxide or 2 above
A thick film varistor characterized in that the varistor film is composed of a glass component consisting of a semiconductor oxide of various types.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62151750A JPS63314802A (en) | 1987-06-18 | 1987-06-18 | Thick film varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62151750A JPS63314802A (en) | 1987-06-18 | 1987-06-18 | Thick film varistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63314802A JPS63314802A (en) | 1988-12-22 |
| JPH0412004B2 true JPH0412004B2 (en) | 1992-03-03 |
Family
ID=15525469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62151750A Granted JPS63314802A (en) | 1987-06-18 | 1987-06-18 | Thick film varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63314802A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100640001B1 (en) * | 2005-02-21 | 2006-11-01 | 한국전자통신연구원 | Circuit for protecting electrical and electronic system using abrupt MIT device and electrical and electronic system comprising of the same circuit |
| KR100714125B1 (en) * | 2005-03-18 | 2007-05-02 | 한국전자통신연구원 | Low voltage noise prevention circuit using abrupt MIT device and electric and electronic system including the circuit |
-
1987
- 1987-06-18 JP JP62151750A patent/JPS63314802A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63314802A (en) | 1988-12-22 |
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