JPH0422983B2 - - Google Patents
Info
- Publication number
- JPH0422983B2 JPH0422983B2 JP59021203A JP2120384A JPH0422983B2 JP H0422983 B2 JPH0422983 B2 JP H0422983B2 JP 59021203 A JP59021203 A JP 59021203A JP 2120384 A JP2120384 A JP 2120384A JP H0422983 B2 JPH0422983 B2 JP H0422983B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- sputtering
- gas
- etching
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
- C04B41/5031—Alumina
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Description
【発明の詳細な説明】
この発明は、薄膜磁気ヘツドの絶縁膜や保護膜
に使用されるAl2O3をスパツタリングにより被着
させる方法に係り、このAl2O3被膜をエツチング
する際のサイドエツチ部の発生を防止できる薄膜
磁気ヘツド用Al2O3被膜の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of depositing Al 2 O 3 , which is used for the insulating film and protective film of a thin film magnetic head, by sputtering. The present invention relates to a method for forming an Al 2 O 3 film for a thin film magnetic head that can prevent the occurrence of cracks.
今日、磁気ヘツドは、オーデイオ用、VTR用
の各テープレコーダー、データーレコーダー、コ
ンピユーター用デイスク、ドラム等の磁気記録再
生用として多用されており、さらに今後は、オー
デイオ用、VTR用の磁気記録媒体のメタルテー
プ化やPCM記録方式化、あるいはコンピユータ
ーの高速、高記録密度化が進められている。そこ
で、かかる要求に対処するため、従来の巻線型バ
ルクヘツドにかえて、ICテクノロジーを用い、
容易にマルチトラツク化、狭トラツク化できる薄
膜磁気ヘツドが最適と考えられている。 Today, magnetic heads are widely used for magnetic recording and reproduction in audio and VTR tape recorders, data recorders, computer disks, drums, etc., and in the future, magnetic heads will be used in magnetic recording media for audio and VTR. Progress is being made in the use of metal tapes, PCM recording systems, and higher speeds and higher recording densities in computers. Therefore, in order to meet these demands, we used IC technology instead of the conventional wire-wound bulkhead.
A thin-film magnetic head that can easily be made into a multi-track or narrow-track head is considered to be optimal.
この薄膜磁気ヘツドの構造に不可欠である絶縁
膜や保護膜は、一般に、セラミツクス等の基板上
に、スパツタリング方法によりAl2O3被膜を被着
形成している。 The insulating film and protective film that are essential to the structure of this thin film magnetic head are generally formed by depositing an Al 2 O 3 film on a substrate such as ceramics by a sputtering method.
上記Al2O3被膜を形成するための従来の高周波
スパツタリングは、Al2O3被膜を形成中スパツタ
リング雰囲気や雰囲気ガス圧力等の作業条件を一
定に維持して行なつており、得られたAl2O3被膜
は全方向に均質で、熱酸等でエツチングし、回路
パターンを形成すると、膜厚み方向及び平面方向
共に同じエツチング素度で浸蝕され、パターン形
成のためのマスクとAl2O3被膜間に大きなサイド
エツチ部が形成さる問題があつた。このサイドエ
ツチ部が大きくなるとAl2O3被膜上に形成される
回路用パターン幅を広げる必要があり、高集積化
を妨げ、さらには、パターン部の被膜とAl2O3被
膜との密着性並びに形状精度に悪影響を及ぼす等
の問題があつた。 Conventional high-frequency sputtering for forming the Al 2 O 3 film is carried out by maintaining constant working conditions such as the sputtering atmosphere and atmospheric gas pressure while forming the Al 2 O 3 film. The 2 O 3 film is homogeneous in all directions, and when it is etched with hot acid etc. to form a circuit pattern, it is eroded with the same etching degree in both the film thickness direction and the plane direction, and the Al 2 O 3 film is used as a mask for pattern formation. There was a problem that large side etches were formed between the coatings. If this side etching becomes large, it is necessary to widen the width of the circuit pattern formed on the Al 2 O 3 film, which impedes high integration and further reduces the adhesion between the pattern part film and the Al 2 O 3 film. There were problems such as an adverse effect on shape accuracy.
この発明は、セラミツクス等の基板上に、
Al2O3をターゲツトとしてスパツタリングにより
Al2O3を被着形成した後、回路パターン形成のた
めのAl2O3被膜のエツチングに際して、サイドエ
ツチの発生を防止できる薄膜磁気ヘツド用Al2O3
被膜の形成方法を目的としている。 In this invention, on a substrate such as ceramics,
By sputtering targeting Al 2 O 3
Al 2 O 3 for thin film magnetic heads that can prevent side etching when etching the Al 2 O 3 film for forming circuit patterns after depositing Al 2 O 3 .
The purpose is a method of forming a film.
すなわち、この発明は、Al2O3をターゲツトと
してスパツタリングにより基板上にAl2O3被膜を
形成する方法において、スパツタリング雰囲気の
Arガスに対して、O2／Ar流量比にて３％以下の
O2ガスを、スパツタリング中にスパツタリング
時間と共に連続的に導入増加させることを特徴と
する薄膜磁気ヘツド用Al2O3被膜の形成方法であ
る。 That is, the present invention provides a method for forming an Al 2 O 3 film on a substrate by sputtering using Al 2 O 3 as a target.
O 2 /Ar flow rate ratio of 3% or less for Ar gas
This is a method for forming an Al 2 O 3 film for a thin film magnetic head, characterized in that O 2 gas is continuously introduced and increased during sputtering as the sputtering time increases.
この発明は、上述したサイドエツチの発生を防
止するため、Al2O3被膜のケミカルエツチング速
度とスパツタリング雰囲気との関係を種々検討し
た結果、以下のスパツタリング機構を知見し、完
成したものである。 In order to prevent the above-mentioned side etching from occurring, this invention was completed after various studies were conducted on the relationship between the chemical etching rate of the Al 2 O 3 film and the sputtering atmosphere, and the following sputtering mechanism was discovered.
スパツタリング雰囲気として、Arガスのみを
用いた場合、形成されるAl2O3被膜は酸欠状態の
Al2Ox（ｘ＜３）状態であり、不完全結晶状態で
被着しているのである。そこで、スパツタリング
雰囲気を、Arガスのみの状態から連続的に暫時
スパツタリング時間と共にO2ガスを導入増大さ
せると、反応性スパツター作用により、Al2O3被
膜の膜厚み方向の表面に向つて、順次上記の酸欠
状態が防止され、Al2O3被膜内のAlとO2組成比は
完全結晶状態に接近するものである。 When only Ar gas is used as the sputtering atmosphere, the Al 2 O 3 film formed is in an oxygen-deficient state.
It is in the Al 2 Ox (x<3) state and is deposited in an incompletely crystalline state. Therefore, when the sputtering atmosphere is changed from Ar gas only to a state where O 2 gas is continuously introduced and increased as the sputtering time increases, the reactive sputtering action causes the Al 2 O 3 film to gradually spread toward the surface in the film thickness direction. The above oxygen deficiency state is prevented, and the Al and O 2 composition ratio in the Al 2 O 3 film approaches a completely crystalline state.
スパツタリング雰囲気をArガスのみの状態か
ら連続的にO2ガスを導入増大することにより、
形成されたAl2O3被膜はその厚み方向の被着始め
の基板表面から最外表面に向つて順次完全結晶状
態に変化しており、このAl2O3被膜をエツチング
すると、第１図の熱酸によるケミカルエツチング
速度とO2／Ar流量比との関係を現したグラフに
示すように、O2ガスの導入量が０から3.0％に増
大すると、Al2O3被膜のケミカルエツチング速度
が1500〓／minより300〓／minに減少するので
ある。 By continuously increasing the sputtering atmosphere from Ar gas only to O 2 gas,
The formed Al 2 O 3 film gradually changes to a perfectly crystalline state in the thickness direction from the initial substrate surface to the outermost surface, and when this Al 2 O 3 film is etched, it becomes as shown in Figure 1. As shown in the graph showing the relationship between the chemical etching rate by hot acid and the O 2 /Ar flow rate ratio, when the amount of O 2 gas introduced increases from 0 to 3.0%, the chemical etching rate of the Al 2 O 3 film increases. The speed decreases from 1500〓/min to 300〓/min.
従つて、スパツタリング雰囲気を、Arガスの
みの状態から連続的にスパツタリング時間と共に
O2ガスを導入増大させるこの発明方法で形成し
たAl2O3被膜は、エツチング時のケミカルエツチ
ング速度が被膜表面で小さく、厚み方向すなわち
エツチング深さ方向に順次増大する性質を有して
いるため、エツチング時に前記したマスクと
Al2O3被膜間のサイドエツチ部の発生が防止され
るのである。すなわち、この発明方法による
Al2O3被膜は、従来方法に比較して、サイドエツ
チ部相当幅だけ、マスク幅を小さくすることがで
き、回路パターンの高集積化が可能であり、
Al2O3被膜のパターン部への被膜の密着性、形状
精度が向上すると共に、Al2O3被膜表面の結晶状
態が完全状態に近く、耐摩耗性、強度、耐候性の
改善が著しいという利点がある。 Therefore, the sputtering atmosphere can be changed from Ar gas only to continuous sputtering time.
The Al 2 O 3 film formed by this method of introducing and increasing O 2 gas has a property that the chemical etching rate during etching is low at the film surface and gradually increases in the thickness direction, that is, in the etching depth direction. , and the mask mentioned above during etching.
This prevents the formation of side etches between the Al 2 O 3 films. That is, according to the method of this invention
Compared to conventional methods, the Al 2 O 3 film can reduce the mask width by the width equivalent to the side etching, making it possible to highly integrate circuit patterns.
The adhesion of the Al 2 O 3 coating to the patterned areas and shape accuracy are improved, and the crystalline state of the Al 2 O 3 coating surface is close to perfect, resulting in significant improvements in wear resistance, strength, and weather resistance. There are advantages.
この発明方法において、Arガスに対して、連
続的に導入増大させるO2ガス量を、O2／Ar流量
比で３％以下に制限するのは、３％を越えると、
形成されるAl2O3被膜の内部応力が大きくなると
共にスパツタリング速度が大巾に低下し、生産性
が低下するためである。 In the method of this invention, the amount of O 2 gas that is continuously introduced and increased relative to Ar gas is limited to 3% or less in terms of O 2 /Ar flow rate ratio.
This is because as the internal stress of the formed Al 2 O 3 film increases, the sputtering speed decreases significantly, resulting in a decrease in productivity.
また、この発明において、スパツタリング雰囲
気に導入するO2ガスの導入増大速度は、Al2O3被
膜に形成する回路用マスク幅や被膜厚み等エツチ
ング条件に応じて適宜選定すればよい。 Further, in the present invention, the rate of increase in the introduction of O 2 gas into the sputtering atmosphere may be appropriately selected depending on the etching conditions such as the width of the circuit mask to be formed on the Al 2 O 3 film and the thickness of the film.
以下に実施例を示し、この発明の効果を説明す
る。 Examples are shown below to explain the effects of this invention.
基板に純度99.5％のAl2O3−TiC系セラミツク
を使用し、ターゲツトとして純度99.9％のAl2O3
を使用し、投入電力5.5KW、スパツター圧力1.0
×10-2ミリバール、の条件で20時間のスパツタリ
ングを行なつた。 99.5% purity Al 2 O 3 -TiC ceramic is used as the substrate, and 99.9% purity Al 2 O 3 is used as the target.
using, input power 5.5KW, sputter pressure 1.0
Sputtering was carried out for 20 hours under the conditions of x10 -2 mbar.
この時のスパツタリング雰囲気は、最初、純度
99.99％のArガスを40cm3／minで導入し、第２図
に示す如く、時間の経過と共に連続的にO2ガス
導入量を、O2／Ar流量比で3.0％まで増加させ
た。 The sputtering atmosphere at this time was initially pure.
99.99% Ar gas was introduced at 40 cm 3 /min, and as time progressed, the amount of O 2 gas introduced was continuously increased to 3.0% in O 2 /Ar flow rate ratio, as shown in FIG.
上記スパツタリング条件により、基板上に30μ
ｍ厚みのAl2O3被膜を形成した。その後Al2O3被
膜上に幅100μｍの回路パターン用のマスクを配
設した。また、比較のため、上記のスパツタリン
グ条件でArガスのみの従来方法でAl2O3被膜を形
成し、同様のマスクを配設した。 Under the above sputtering conditions, 30μ
An Al 2 O 3 film with a thickness of m was formed. Thereafter, a mask for a circuit pattern with a width of 100 μm was placed on the Al 2 O 3 film. For comparison, an Al 2 O 3 film was formed using the conventional method using only Ar gas under the above sputtering conditions, and a similar mask was provided.
次に、第３図に示す如く、Al2O3被膜２とマス
ク３を形成した基板１に、70℃に加熱した50wt
％の燐酸を使用して５時間のエツチングを施し、
Al2O3被膜の回路パターンを形成し、エツチング
時に発生したサイドエツチ部４の幅を測定した。 Next, as shown in Fig . 3 , a 50wt.
Etched for 5 hours using % phosphoric acid,
A circuit pattern of the Al 2 O 3 film was formed, and the width of the side etched portion 4 generated during etching was measured.
従来方法により形成したAl2O3被膜の場合、発
生したサイドエツチ部の幅（ｗ）は40μｍであつ
たが、この発明によるAl2O3被膜の場合、サイド
エツチ部の幅（w′）は20μｍであり、サイドエツ
チ部が小さく、Al2O3被膜のパターン形成に極め
て有利なことが分る。 In the case of the Al 2 O 3 film formed by the conventional method, the width (w) of the generated side etched portion was 40 μm, but in the case of the Al 2 O 3 film according to the present invention, the width (w′) of the side etched portion was 20 μm. It can be seen that the side etches are small, which is extremely advantageous for patterning the Al 2 O 3 film.
第１図は熱酸によるエツチング速度とO2／Ar
流量比との関係を現したグラフであり、第２図は
スパツタリング時間と導入するO2ガス量との関
係を示すグラフであり、第３図は、Al2O3被膜の
パターンにおけるサイドエツチの発生を示す断面
説明図である。
１……基板、２……Al2O3被膜、３……マス
ク、４……サイドエツチ部。
Figure 1 shows the etching rate with hot acid and O 2 /Ar.
This is a graph showing the relationship between the flow rate ratio, Figure 2 is a graph showing the relationship between the sputtering time and the amount of O 2 gas introduced, and Figure 3 is a graph showing the relationship between the sputtering time and the amount of O 2 gas introduced. FIG. 1... Substrate, 2... Al 2 O 3 coating, 3... Mask, 4... Side etched portion.
Claims (1)
より基板上にAl2O3被膜を形成する方法におい
て、スパツタリング雰囲気のArガスに対して、
O2／Ar流量比にて３％以下のO2ガスを、スパツ
タリング中にスパツタリング時間と共に連続的に
導入増加させることを特徴とする薄膜磁気ヘツド
用Al2O3被膜の形成方法。1 In a method of forming an Al 2 O 3 film on a substrate by sputtering using Al 2 O 3 as a target,
A method for forming an Al 2 O 3 film for a thin film magnetic head, characterized in that O 2 gas with an O 2 /Ar flow rate ratio of 3% or less is continuously introduced and increased during sputtering as the sputtering time increases.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2120384A JPS60165788A (en) | 1984-02-07 | 1984-02-07 | Method of forming a1203 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2120384A JPS60165788A (en) | 1984-02-07 | 1984-02-07 | Method of forming a1203 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60165788A JPS60165788A (en) | 1985-08-28 |
| JPH0422983B2 true JPH0422983B2 (en) | 1992-04-21 |
Family
ID=12048418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2120384A Granted JPS60165788A (en) | 1984-02-07 | 1984-02-07 | Method of forming a1203 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60165788A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5569254A (en) * | 1978-11-17 | 1980-05-24 | Yoichi Murayama | Coloring method for metal surface |
| JPS6047905B2 (en) * | 1980-07-14 | 1985-10-24 | ユニヴア−シテイ・オブ・シドニ− | Method and apparatus for reactively sputtering a graded surface coating onto a substrate |
-
1984
- 1984-02-07 JP JP2120384A patent/JPS60165788A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60165788A (en) | 1985-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0827925B2 (en) | Magnetic head slider having protective coating and method of manufacturing the same | |
| US5316617A (en) | Thin film magnetic head and method of manufacturing the same | |
| JPH0422983B2 (en) | ||
| EP0273195B1 (en) | A method of making a thin magnetic pole piece | |
| US5322595A (en) | Manufacture of carbon substrate for magnetic disk | |
| JP3569009B2 (en) | Method for manufacturing magnetic device | |
| JPH041066B2 (en) | ||
| JP2751696B2 (en) | Method for manufacturing thin-film magnetic head | |
| US5279026A (en) | Process for producing a thin-film magnetic tape head | |
| JPH0364451A (en) | Production of insulation coating film | |
| JPH07331429A (en) | Thin film formation method | |
| KR100216928B1 (en) | Manufacturing method of thin film magnetic head | |
| KR100256068B1 (en) | Manufacturing method for multi thin layer having nife-n | |
| JPS6327768B2 (en) | ||
| JP2735967B2 (en) | Manufacturing method of floating magnetic head | |
| KR100239478B1 (en) | Manufacturing method of magnetic head | |
| JPH0371411A (en) | Manufacturing method of thin film magnetic head | |
| JPS5858283A (en) | Etching method | |
| JPH04335202A (en) | Production of vertical magnetic recording and reproducing thin-film head | |
| JPH0729115A (en) | Manufacture of magnetic head | |
| JPH01128215A (en) | Thin film magnetic head and its manufacture | |
| JPH02247808A (en) | Thin film magnetic head and its production | |
| JPH03113817A (en) | Thin film magnetic head and substrate therefor | |
| JPS61180914A (en) | Production of magnetic head substrate | |
| JPH0283811A (en) | Manufacturing method of thin film magnetic head |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |