JPH0424187B2 - - Google Patents
Info
- Publication number
- JPH0424187B2 JPH0424187B2 JP62280243A JP28024387A JPH0424187B2 JP H0424187 B2 JPH0424187 B2 JP H0424187B2 JP 62280243 A JP62280243 A JP 62280243A JP 28024387 A JP28024387 A JP 28024387A JP H0424187 B2 JPH0424187 B2 JP H0424187B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- particle size
- particles
- abrasive
- fine powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000002245 particle Substances 0.000 claims description 27
- 239000000843 powder Substances 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 229910052845 zircon Inorganic materials 0.000 claims description 6
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 6
- 239000003082 abrasive agent Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
(産業上の利用分野)
本発明は、半導体、光学関係機材等の表面を研
摩するのに有用な研摩材、とくにはこれらの被研
摩材に対して優れた研摩面を速やかに付与する微
粉研摩材に関するものである。
(従来技術とその問題点)
従来、上述した分野の表面研摩には褐色溶融ア
ルミナとジルコン(ZrSiO4)の約50−50重量%
混合物からなる微粉研摩材が使用されている。こ
の研摩材は最大粒子径が16μm以下で、粒子径4
〜16μmの範囲の粒子が全体の99〜100重量%を
占め、4μm以下の粒子は殆んど含まれていない。
この微粉研摩材を用いて上記の被研摩材の表面を
研摩すると、その表面にスクラツチの発生が多
く、製品の歩止まりを著しく低下させるほか、研
摩速度を上げることができない。そこで生産性と
砥粒原単位を上げるため、これより粒径の大きい
砥粒を使用して研摩速度を上げる方法が試みられ
たが、その速度に比例して研摩面の加工精度が低
下するという問題があり実用化には至らなかつ
た。このためスクラツチの無い優れた加工面を速
やかに付与できる微粉研摩材の出現が強く望まれ
ていた。
(問題点を解決するための手段)
本発明はかかる事情に基づいて達成されたもの
で、研摩速度が大きくても優れた加工面を付与で
きる微粉研摩材を提供することを目的とする。
すなわち、本発明者らは種々検討の結果、この
微粉研摩材として、褐色溶融アルミナ10〜90重量
%とジルコン90〜10重量%との混合物からなる最
大粒子径16μm以下、平均粒子径が6〜7μmの微
粉であつて、粒子径4μm以上〜16μm以下の粒子
が全体の85〜95重量%(好ましくは粒子径10.1μ
m以上〜16μm以下の粒子が全体の2〜7重量
%、6.35μm以上〜10.1μm以下の粒子が40〜60重
量%、4.00μm以上〜6.35μm以下の粒子が30〜40
重量%)であり4μm未満の粒子が15〜5重量%
である粒度分布を持つものとするときは、これを
研摩加工、とくには半導体、光学関係機材等の表
面の研摩加工に使用すると、速い研摩速度でスク
ラツチのない優れた加工面が得られ、4μm未満
の粒子が5重量%未満のときは効果が無く、また
10重量%を超すとスクラツチの発生が多くなるこ
とを見出し本発明を完成させた。
(実施例)
以下、本発明の詳細を実施例に基づいて説明す
るが、本発明はこれに限定されるものではない。
実施例 1
褐色溶融アルミナ50重量%とジルコン50重量%
との混合物からなる第1表に示す粒度分布(粒度
の測定は電気抵抗法による)を有する微粉研摩材
を試作した。この試作品の評価のため、これと市
販品(その粒度分布は第1表に併記する)とを、
それぞれ水に懸濁したスラリーに調製し、被加工
物としてシリコンウエハを用い、ラツピングマシ
ン(不二越機械工業(株)製)により定盤回転数
63rpm、荷重100g/cm2の条件で、かけ捨てに供
給して研摩を行つた。その結果を第2表に示し
た。
(Field of Industrial Application) The present invention relates to an abrasive material useful for polishing the surfaces of semiconductors, optical equipment, etc., and particularly to a fine powder abrasive material that quickly imparts an excellent polished surface to these materials to be polished. It is related to materials. (Prior art and its problems) Conventionally, about 50-50% by weight of brown fused alumina and zircon (ZrSiO 4 ) was used for surface polishing in the above-mentioned fields.
A fine abrasive consisting of a mixture is used. This abrasive has a maximum particle size of 16 μm or less, and a particle size of 4
Particles in the range of ~16 μm account for 99 to 100% by weight of the total, and particles of 4 μm or less are hardly included.
When this fine powder abrasive is used to polish the surface of the above-mentioned material to be polished, many scratches occur on the surface, which significantly reduces the yield of the product and makes it impossible to increase the polishing speed. Therefore, in order to increase productivity and abrasive grain consumption, attempts were made to increase the polishing speed by using abrasive grains with a larger grain size, but it was found that the machining accuracy of the polished surface decreased in proportion to the speed. Due to problems, it was not put into practical use. For this reason, there has been a strong desire for the emergence of a fine powder abrasive that can quickly provide an excellent machined surface without scratches. (Means for Solving the Problems) The present invention was achieved based on the above circumstances, and an object of the present invention is to provide a fine powder abrasive that can provide an excellent machined surface even at a high polishing speed. That is, as a result of various studies, the present inventors have found that this fine powder abrasive is made of a mixture of 10 to 90% by weight of brown fused alumina and 90 to 10% by weight of zircon, and has a maximum particle size of 16 μm or less and an average particle size of 6 to 6 μm. It is a fine powder of 7 μm, and particles with a particle size of 4 μm or more and 16 μm or less account for 85 to 95% by weight of the total (preferably a particle size of 10.1 μm).
2 to 7% of the total weight of particles from m to 16μm, 40 to 60% by weight of particles from 6.35μm to 10.1μm, and 30 to 40% of particles from 4.00μm to 6.35μm.
(wt%) and 15 to 5 wt% particles less than 4 μm.
If it has a particle size distribution of If the amount of particles is less than 5% by weight, there is no effect;
The present invention was completed based on the discovery that scratches occur more frequently when the content exceeds 10% by weight. (Examples) Hereinafter, the details of the present invention will be explained based on Examples, but the present invention is not limited thereto. Example 1 50% by weight brown fused alumina and 50% by weight zircon
A fine powder abrasive material having a particle size distribution shown in Table 1 (particle size was measured by the electrical resistance method) was produced as a prototype. In order to evaluate this prototype, we compared it with a commercially available product (its particle size distribution is also listed in Table 1).
Each was prepared as a slurry suspended in water, and using a silicon wafer as the workpiece, the number of rotations of the surface plate was adjusted using a wrapping machine (manufactured by Fujikoshi Machine Industry Co., Ltd.).
Polishing was carried out under the conditions of 63 rpm and a load of 100 g/cm 2 by supplying the polishing material in a continuous manner. The results are shown in Table 2.
【表】【table】
【表】
表から明らかなように、本発明の研摩材を用い
てシリコンウエハを研摩した場合(とくに4μm
未満の粒子が15〜5重量%の粒度分布をしている
試作品AおよびBの場合)、市販品を用いたとき
に比較して研摩面におけるスクラツチの発生が極
端に少なく、優れた研摩表面が得られると共に、
試作品の平均粒径の方が小さいにもかかわらず研
摩速度の大きいことが判明した。
実施例 2
褐色溶融アルミナとジルコンとの混合比が15:
85、45:55、75:25であり、第3表に示す粒度分
布を有する3種の研摩材を試作し、前例と同様に
して研摩加工を行い、その研摩特性を測定して試
作品の評価を行つた。その結果を第4表に示し
た。[Table] As is clear from the table, when silicon wafers were polished using the abrasive of the present invention (especially 4 μm
In the case of prototypes A and B, which have a particle size distribution of 15 to 5% by weight), the occurrence of scratches on the polished surface is extremely small compared to when commercial products are used, and the polished surface is excellent. is obtained, and
It was found that the polishing speed was high even though the average grain size of the prototype was smaller. Example 2 The mixing ratio of brown fused alumina and zircon is 15:
85, 45:55, and 75:25, and have the particle size distributions shown in Table 3. We produced three types of abrasives as prototypes, performed abrasive processing in the same manner as in the previous example, measured their abrasive characteristics, and determined the characteristics of the prototypes. I conducted an evaluation. The results are shown in Table 4.
【表】【table】
【表】【table】
【表】
表から明らかなように、微粉研摩材の褐色溶融
アルミナとジルコンとの混合比を変えてもスクラ
ツチの発生はなく表面粗さも優れている。
(発明の効果)
以上のように、本発明の微粉研摩材はSi、
GaP、GaAs等の半導体、光学ガラス材料などの
研摩材として極めて有用である。[Table] As is clear from the table, no scratches occur and the surface roughness is excellent even when the mixing ratio of brown fused alumina and zircon in the fine powder abrasive is changed. (Effect of the invention) As described above, the fine powder abrasive of the present invention has Si,
It is extremely useful as an abrasive for semiconductors such as GaP and GaAs, and optical glass materials.
Claims (1)
〜10重量%との混合物からなる最大粒子径が16μ
m以下、平均粒子径が6〜7μmの微粉であつて、
粒子径4μm以上〜16μm以下の粒子が全体の85〜
95重量%、4μm未満の粒子が15〜5重量%の粒
度分布を有することを特徴とする微粉研摩材。1 Brown fused alumina 10-90% by weight and zircon 90
~10% by weight mixture with maximum particle size of 16μ
m or less, a fine powder with an average particle diameter of 6 to 7 μm,
Particles with a particle size of 4μm or more and 16μm or less account for 85 to 100% of the total particles.
1. A fine powder abrasive material having a particle size distribution of 95% by weight and 15% to 5% by weight of particles less than 4 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62280243A JPH01121164A (en) | 1987-11-05 | 1987-11-05 | Fine powder abrasive |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62280243A JPH01121164A (en) | 1987-11-05 | 1987-11-05 | Fine powder abrasive |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01121164A JPH01121164A (en) | 1989-05-12 |
| JPH0424187B2 true JPH0424187B2 (en) | 1992-04-24 |
Family
ID=17622292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62280243A Granted JPH01121164A (en) | 1987-11-05 | 1987-11-05 | Fine powder abrasive |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01121164A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03220810A (en) * | 1990-01-25 | 1991-09-30 | Shin Etsu Chem Co Ltd | Piezoelectric single crystal wafer and its manufacture |
| JP3416855B2 (en) * | 1994-04-15 | 2003-06-16 | 株式会社フジミインコーポレーテッド | Polishing composition and polishing method |
| TWI547552B (en) * | 2012-03-19 | 2016-09-01 | 福吉米股份有限公司 | Honing material for polishing processing and manufacturing method using the same |
-
1987
- 1987-11-05 JP JP62280243A patent/JPH01121164A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01121164A (en) | 1989-05-12 |
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