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JPH0428786B2 - - Google Patents
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JPH0428786B2 - - Google Patents

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Publication number
JPH0428786B2
JPH0428786B2 JP60239426A JP23942685A JPH0428786B2 JP H0428786 B2 JPH0428786 B2 JP H0428786B2 JP 60239426 A JP60239426 A JP 60239426A JP 23942685 A JP23942685 A JP 23942685A JP H0428786 B2 JPH0428786 B2 JP H0428786B2
Authority
JP
Japan
Prior art keywords
electrode
electrodes
connecting rod
stacked
electrode plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60239426A
Other languages
Japanese (ja)
Other versions
JPS6299476A (en
Inventor
Nobuo Nakamura
Juichi Shimada
Sunao Matsubara
Haruo Ito
Shinichi Muramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP23942685A priority Critical patent/JPS6299476A/en
Publication of JPS6299476A publication Critical patent/JPS6299476A/en
Publication of JPH0428786B2 publication Critical patent/JPH0428786B2/ja
Granted legal-status Critical Current

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  • Discharge Heating (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明はプラズマCVD(Chemical Vapour
Deposition)装置の放電電極の構造に関する。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to plasma CVD (Chemical Vapor CVD).
Regarding the structure of the discharge electrode of the device (deposition).

〔発明の背景〕[Background of the invention]

ホットウオール方式のプラズマCVD装置の特
徴は複数の放電電極を持つために、一度に多数枚
の基板を処理できることである(最新アモルファ
スSiハンドブック、(株)サイエンスフオーラム社
刊、p75〜76、1983年参照)。
A feature of hot wall type plasma CVD equipment is that it has multiple discharge electrodes, so it can process many substrates at once (Latest Amorphous Si Handbook, published by Science Forum Co., Ltd., p. 75-76, 1983) reference).

従来のこの方式の装置においては、放電電極が
全体として固定されており、全体を解体すること
なくしては一枚の放電電極を取りはずすことが出
来なかつた。したがつて任意の組数の電極を簡単
に構成できなかつたため生産性に欠けることがあ
つた。
In conventional devices of this type, the discharge electrodes are fixed as a whole, and it is not possible to remove a single discharge electrode without disassembling the entire device. Therefore, it was not possible to easily construct an arbitrary number of electrodes, resulting in a lack of productivity.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、放電電極の着脱が容易にで
き、かつ放電電極を接続する接続棒の径を小さく
することにある。
An object of the present invention is to enable easy attachment and detachment of discharge electrodes and to reduce the diameter of a connecting rod that connects the discharge electrodes.

〔発明の概要〕[Summary of the invention]

本発明において、第1図に1例を示すように電
極板1には3本の接続棒2が固定されており、ま
た電極板1には3つの切欠き5が形成されてい
る。このような電極板1を第3図に示すように積
重ねると交互に極性の異なる複数組の電極対を構
成することが容易にできる。本発明によれば電極
の着脱が容易なため清掃が容易に行えることの
他、接続棒が垂直に配置されるため電極板1の重
量が接続棒2の長さ方向にかかるので、水平に配
置される場合に較べて接続棒の径を小さくするこ
とができ、電極板以外の放電部の面積を小さくで
きる。また、本発明により、任意の組数の電極を
容易に構成することができる。更に接続棒や切欠
きの数は必要に応じて定めて良いことはいうまで
もない。
In the present invention, as an example shown in FIG. 1, three connecting rods 2 are fixed to the electrode plate 1, and three notches 5 are formed in the electrode plate 1. By stacking such electrode plates 1 as shown in FIG. 3, it is easy to form a plurality of electrode pairs having alternately different polarities. According to the present invention, cleaning can be easily performed because the electrodes can be easily attached and detached, and since the connecting rod is arranged vertically, the weight of the electrode plate 1 is applied in the length direction of the connecting rod 2, so it is arranged horizontally. The diameter of the connecting rod can be made smaller than that in the case where the electrode plate is used, and the area of the discharge part other than the electrode plate can be made smaller. Further, according to the present invention, it is possible to easily configure an arbitrary number of electrodes. Furthermore, it goes without saying that the number of connecting rods and notches may be determined as necessary.

〔発明の実施例〕[Embodiments of the invention]

以下本発明の実施例を第1〜3図を用いて説明
する。
Embodiments of the present invention will be described below with reference to FIGS. 1 to 3.

第1図は3本の接続棒を持つ1枚の高周波電極
であり、第2図は接続棒の拡大図である。第3図
は、第1図に示す電極を4枚積み重ねた場合の全
体構成図であり、電極はこの様に上に積み重ねる
ことによつて自由にその個数を変えることができ
る。直径100mm、厚さ2mmのステンレス製円板1
に約10mmの切欠きを120゜毎に3ヶ所設け、次に直
径3mm、長さ50mmのステンレス棒を第2図に示す
ように一端を突状に、他端を皿状に加工してから
第1図に示すようにステンレス製円板1に溶接、
固定した。このような電極を4ヶ製作し、第3図
に示すように積み重ねてプラズマ装置内に設置し
た。接続棒2に高周波電源3により15Wの高周波
電力を供給してアモルファスSi膜を形成したとこ
ろ、時間とともに成膜速度はほとんど低下せず、
短時間で成膜することができた。
FIG. 1 shows one high-frequency electrode with three connecting rods, and FIG. 2 is an enlarged view of the connecting rods. FIG. 3 is an overall configuration diagram when four electrodes shown in FIG. 1 are stacked, and the number of electrodes can be freely changed by stacking them on top of each other in this way. Stainless steel disk 1 with a diameter of 100 mm and a thickness of 2 mm
Make three notches of approximately 10 mm in diameter at 120° intervals, then process a stainless steel rod with a diameter of 3 mm and a length of 50 mm into a protruding shape at one end and a dish shape at the other end as shown in Figure 2. Welded to a stainless steel disc 1 as shown in Figure 1,
Fixed. Four such electrodes were manufactured, stacked as shown in FIG. 3, and installed in a plasma device. When an amorphous Si film was formed by supplying 15W of high-frequency power to the connecting rod 2 from the high-frequency power supply 3, the film formation rate hardly decreased over time.
The film could be formed in a short time.

ここで第2図の説明を補足する。 Here, the explanation of FIG. 2 will be supplemented.

第2図は接続棒2の拡大概観図である。接続棒
の一端が他の接続棒の他の一端と嵌合し得るよう
に、一端は円錐凸形に、他端は円錐状凹形になつ
ている。
FIG. 2 is an enlarged schematic view of the connecting rod 2. One end of the connecting rod has a conical convex shape and the other end has a conical concave shape so that one end of the connecting rod can be fitted with the other end of another connecting rod.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、放電電極の着脱が容易となる
ので、装置の清掃が容易となる。また生産量に応
じた電極構造を容易に構成でき、また接続棒の直
径が小さく、その表面積が小さいので、成膜時の
安定性が向上し、よつて生産性を向上し得る効果
がある。
According to the present invention, since the discharge electrode can be easily attached and detached, the device can be easily cleaned. Further, the electrode structure can be easily constructed according to the production volume, and since the diameter of the connecting rod is small and its surface area is small, stability during film formation is improved, which has the effect of improving productivity.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は3本の接続棒を持つ一枚の高周波電極
の概観図、第2図は接続棒の拡大概観図、第3図
は高周波電極を4枚積み重ねた時の概観図であ
る。 1……電極板、2……接続棒、3……高周波電
源、4……電極(高周波電極)、5……切欠き。
FIG. 1 is an overview of a single high-frequency electrode with three connecting rods, FIG. 2 is an enlarged overview of the connecting rod, and FIG. 3 is an overview of four high-frequency electrodes stacked together. 1... Electrode plate, 2... Connection rod, 3... High frequency power source, 4... Electrode (high frequency electrode), 5... Notch.

Claims (1)

【特許請求の範囲】[Claims] 1 3個以上の切欠きを有する電極板に、この切
欠きと同数の接続棒を固着し、この同数の接続棒
は各々同じ長さを有し、上記電極板は上記接続棒
のみによつて水平に支持されるようにして形成し
た電極を複数個有し、この各電極は上記各電極板
に固着された上記各接続棒が隣り合う上記各電極
の電極板の切欠きを通す如くにして交互に積み重
ねて配置し、各上記電極の接続棒の一端と、1つ
離れて隣り合う上記電極の接続棒の一端とが嵌合
し得るように形成され、上記接続棒に通電するこ
とにより、上記積み重ねた各電極に1つおきに同
電位が印加されるようにし、かつ積み重ねた上記
各電極の最下部を形成する電極の有する接続棒
は、積み重ねたその他の電極の有する接続棒のほ
ぼ半分の長さを有することにより、積み重ねられ
た上記各電極の電極板が等間隔に配設されたこと
を特徴とするプラズマCVD装置の放電電極。
1. An electrode plate having three or more notches is fixed with the same number of connecting rods as the notches, each of the same number of connecting rods has the same length, and the electrode plate is connected only by the connecting rods. A plurality of electrodes are formed to be horizontally supported, and each of the electrodes is arranged such that each of the connection rods fixed to each of the electrode plates passes through a notch in the electrode plate of each adjacent electrode. The electrodes are alternately stacked and arranged so that one end of the connecting rod of each of the electrodes can be fitted with one end of the connecting rod of the adjacent electrode, and by energizing the connecting rod, The same potential is applied to every other stacked electrode, and the connecting rod of the electrode forming the bottom of the stacked electrodes is approximately half as large as the connecting rod of the other stacked electrodes. A discharge electrode for a plasma CVD apparatus, characterized in that the electrode plates of each of the stacked electrodes are arranged at equal intervals by having a length of .
JP23942685A 1985-10-28 1985-10-28 Electrical discharge electrode for plasma cvd device Granted JPS6299476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23942685A JPS6299476A (en) 1985-10-28 1985-10-28 Electrical discharge electrode for plasma cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23942685A JPS6299476A (en) 1985-10-28 1985-10-28 Electrical discharge electrode for plasma cvd device

Publications (2)

Publication Number Publication Date
JPS6299476A JPS6299476A (en) 1987-05-08
JPH0428786B2 true JPH0428786B2 (en) 1992-05-15

Family

ID=17044595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23942685A Granted JPS6299476A (en) 1985-10-28 1985-10-28 Electrical discharge electrode for plasma cvd device

Country Status (1)

Country Link
JP (1) JPS6299476A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH057240Y2 (en) * 1987-06-26 1993-02-24
DE102013112855A1 (en) * 2013-11-21 2015-05-21 Aixtron Se Apparatus and method for manufacturing carbon nanostructures
CN104775106B (en) * 2015-04-09 2017-08-08 山东禹城汉能薄膜太阳能有限公司 Multi-disc deposits the battery lead plate and amorphous silicon membrane deposition process of PECVD amorphous silicon membrane reaction boxes

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969141A (en) * 1982-10-12 1984-04-19 Kokusai Electric Co Ltd Electrode holder of externally heating type plasma chemical vapor growth device

Also Published As

Publication number Publication date
JPS6299476A (en) 1987-05-08

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