Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0433772B2 - - Google Patents
[go: Go Back, main page]

JPH0433772B2 - - Google Patents

Info

Publication number
JPH0433772B2
JPH0433772B2 JP1134087A JP1134087A JPH0433772B2 JP H0433772 B2 JPH0433772 B2 JP H0433772B2 JP 1134087 A JP1134087 A JP 1134087A JP 1134087 A JP1134087 A JP 1134087A JP H0433772 B2 JPH0433772 B2 JP H0433772B2
Authority
JP
Japan
Prior art keywords
group
diethynylbenzene
benzene
ppm
proton
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1134087A
Other languages
Japanese (ja)
Other versions
JPS63179836A (en
Inventor
Yukihiro Ikeda
Masaru Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP1134087A priority Critical patent/JPS63179836A/en
Publication of JPS63179836A publication Critical patent/JPS63179836A/en
Publication of JPH0433772B2 publication Critical patent/JPH0433772B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0755Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Description

【発明の詳现な説明】[Detailed description of the invention]

技術分野 本発明はレゞスト材料、有機半導䜓、導電材料
等の電子材料ずしお有甚な新芏ゞ゚チニルベンれ
ン誘導䜓に関する。 産業䞊の利甚分野 ベンれン環に個の゚チニル基が盎接結合しお
いるゞ゚チニルベンれン化合物は、䞀般に、γ
線、電子線、線、玫倖線、可芖光線、赀倖線
熱等の゚ネルギヌ照射に察しお極めお高感床
であり、か぀゚ネルギヌ照射により埗られる重合
䜓は、耐゚ツチング性に優れるため、電子線レゞ
スト、線レゞスト、フオトレゞストのようなパ
タヌン圢成材料、又は感熱材料ずしお有甚であ
る。たた、前蚘の゚ネルギヌ照射により䞎えられ
る重合䜓は、≡䞉重結合が開いお共圹二重結
合を圢成した共圹高分子ずなるため有機半導䜓、
導電性材料の電子材料ずしお甚いるこずもでき
る。 又、本発明のゞ゚チニルベンれン誘導䜓は、た
ずえば分子末端のビニル基を酞化しおカルボン酞
に倉換するこずにより、䞡芪媒性化合物を補造す
るこずができる。分子内に適圓な数のメチレン基
からなる長鎖状構造のような疎氎性構造郚分ず、
アミノ基、氎酞基、カルボキシル基のような芪氎
性構造郚分の䞡方を兌ねそなえた䞡芪媒性化合物
は、氎面䞊に単分子膜を圢成する。この単分子膜
は、ラングミナアヌブロゞ゚ツト法以䞋、“LB
法”ずいう。たた、この方法により補造した膜を
“LB膜”ずいう。により、適圓な基板䞊に环積
し、高配向性の分子环積膜を圢成するこずができ
る。特に分子内にゞ゚チニルベンれンのような構
造郚分を有する䞡芪媒性分子のLB膜は、レゞス
トのようなパタヌン圢成材料や有機半導䜓、導電
材料などの電子材料、非線圢光孊材料のようなオ
プト゚レクトロニクス材料ぞの応甚が考えられ、
産業䞊非垞に有甚である。 埓来技術及び問題点 これたで、ゞ゚チニルベンれン
(Technical Field) The present invention relates to a novel diethynylbenzene derivative useful as a resist material, an organic semiconductor, an electronic material such as a conductive material, and the like. (Industrial Application Field) Diethynylbenzene compounds, in which two ethynyl groups are directly bonded to the benzene ring, generally have γ
It is highly sensitive to energy irradiation such as beams, electron beams, , X-ray resists, patterning materials such as photoresists, or heat-sensitive materials. In addition, the polymer given by the energy irradiation becomes a conjugated polymer in which the C≡C triple bond opens to form a conjugated double bond, so it is an organic semiconductor,
It can also be used as a conductive electronic material. Further, the diethynylbenzene derivative of the present invention can be used to produce an amphipathic compound by, for example, oxidizing the vinyl group at the end of the molecule to convert it into a carboxylic acid. A hydrophobic structural part such as a long chain structure consisting of an appropriate number of methylene groups in the molecule,
Amphipathic compounds that have both hydrophilic structural moieties such as amino groups, hydroxyl groups, and carboxyl groups form a monomolecular film on the water surface. This monomolecular film was prepared using the Langmuir Blosget method (hereinafter referred to as “LB”).
(The film produced by this method is also called the "LB film.") It is possible to accumulate on a suitable substrate and form a highly oriented molecular cumulative film.In particular, diethinyl in the molecules can be accumulated on a suitable substrate. LB films made of amphiphilic molecules with structural moieties such as benzene can be applied to pattern-forming materials such as resists, electronic materials such as organic semiconductors and conductive materials, and optoelectronic materials such as nonlinear optical materials. ,
Very useful in industry. (Prior art and problems) Until now, diethynylbenzene

【匏】又は䞀般匏[Formula] or general formula

【匏】は 以䞊以䞋の敎数で衚される化合物、および[Formula] (n is 1 a compound represented by (an integer greater than or equal to 4), and

【匏】のような化 合物はすでに知られおいる〔J.K.Crandallら、
Joural of American Chemical Society97
247171−1975E.A.Runovaら、Vestn.
Mosk.Univ.Ser.2Khim.24299−300
1983等〕。 ゞ゚チニルベンれン化合物は、γ線、電子線、
玫倖線、可芖光線、赀倖線熱等の゚ネルギヌ
照射に察しお感受性を有しおいるが、分子量が小
さいため良質な薄膜の䜜補が困難であり、たた昇
華性のため枛圧䞋で取扱いが困難であ぀た。 ゞ゚チニルベンれン構造を有する化合物の薄膜
䜜補にLB法の適甚が考えられるが、LB膜䜜補䞊
必芁な䞡芪媒性を有するゞ゚チニルベンれン化合
物は知られおおらず、その補造原料も知られおい
ない。 問題を解決するための手段 このような問題点に鑑み、本発明者らは、薄膜
の䜜補が可胜であり、非昇華性のゞ゚チニルベン
れン化合物であり、たたLB技術に適甚可胜な䞡
芪媒性化合物の補造原料ずなるゞ゚チニルベンれ
ン化合物を埗るべく鋭意怜蚎を重ねた結果、本発
明のゞ゚チニルベンれン誘導䜓を埗るに至぀た。 すなわち、本発明は分子内にゞ゚チニルベンれ
ン構造、及びメチレン鎖、及び䞀方の分子末端に
ビニル基、他方の分子末端に氎玠又はアルキルシ
リル基を有する䞋蚘の䞀般匏で衚される新芏なゞ
゚チニルベンれン誘導䜓に関する。 〔匏䞭のは氎玠又は−SiX1X2X3で、X1X2
X3はそれぞれ独立に氎玠又は炭玠数が〜の
アルキル基ただし、X1X2X3がすべお氎玠
の堎合は陀くで、か぀は以䞊21以䞋の敎数
である。〕 本発明のゞ゚チニルベンれン誘導䜓はその分子
構造特性から、IR吞収スペクトルにおいお、ベ
ンれン環およびビニル基の−䌞瞮振動、メチ
レン基の−䌞瞮振動、≡䌞瞮振動がそれ
ぞれ3000〜3080cm-12850〜2960cm-12010〜
2260cm-1に芳枬される。たた、ベンれン環特有
の吞収が1600cm-1付近、1500cm-1付近に、ベンれ
ン環の−面倖倉角振動が690〜860cm-1に芳枬
される。 たた、1−NMRスペクトルにおいおは、ベン
れン環、ビニル基のCH2及び−CHのプロ
トンがそれぞれ、6.9〜7.8ppm、3.9〜6.4ppm
5.3〜7.3ppmに、たた≡に隣接するメチレン
基、ビニル基に隣接するメチレン基、その他のメ
チレン基のプロトロンがそれぞれ、2.2〜
2.5ppm1.8〜2.2ppm0.6〜1.9ppmに芳枬され
る。たた、眮換基の構造に起因するIR吞収、1
−NMRシグナルもそれぞれのスペクトルにお
いお認められる。 本発明のゞ゚チニルベンれン誘導䜓の䞀般匏に
おいお、眮換基は氎玠又は−SiX1X2X3である
が、−SiX1X2X3の䟋ずしお、トリメチルシリル
基、トリ゚チルシリル基、メチルゞ゚チルシリル
基、トリブチルシリル基、トリヘプチルシリル
基、ゞ゚チルシリル基等を挙げるこずができる。 又、ベンれン環ぞの二぀の゚チニル基の眮換様
匏は、オルト、メタ、パラのいずれであ぀おもよ
い。 本発明のゞ゚チニルベンれン誘導䜓は、15℃で
固䜓であり、アセトン、メチル゚チルケトン、゚
タノヌル、酢酞゚チル、クロロホルム、ベンれ
ン、ヘキサン等の溶媒に可溶である。 次に、本発明のゞ゚チニルベンれン誘導䜓の合
成法の䞀䟋を説明する。たず、合成反応のスキヌ
ムを以䞋に瀺す。 たず、ゞ゚チニルベンれンを出発原料の䞀぀
ずしお、グリニダヌル法によりゞ゚チニルベンれ
ンの二぀の゚チニル基を金属ハロゲン化させ、化
合物を埗る。この化合物をX1X2X3SiClX1
X2X3はそれぞれ独立に氎玠又は炭玠数が〜
のアルキル基のいずれかであり、X1X2X3
は同時にすべおは氎玠ではないず反応させお、
ビスアルキルシリル化゚チニルベンれン を合成する。 䞀方、アルケニルアルコヌル CH2CH−CH2o−OH ただし、は
以䞊21以䞋の敎数をもう䞀぀の出発原料ずし
お、トシルクロリドず反応させお、アルケニルト
シレヌト CH2CH−CH2o−OTs ただ
し、は以䞊21以䞋の敎数、Tsはトシル基
を合成する。䞊蚘のビスアルキルシリル化゚チニ
ルベンれンずアルケニルトシレヌトを、メチ
ルリチりム等を甚いお、䞀方のアルキルシリル基
を脱シリル化しお有機金属化合物ずし、アルケ
ニルトシレヌトず反応させるこずにより、本発
明のが−SiX1X2X3X1X2X3はそれぞれ独
立に氎玠又は炭玠数〜のアルキル基で、X1
X2X3は同時にすべおは氎玠ではないの堎合
のゞ゚チニルベンれン誘導䜓を合成するこずが
できる。 たた、が氎玠の堎合の本発明のゞ゚チニルベ
ンれン誘導䜓は、がアルキルシリル基、−SiX1
X2X3の前蚘誘導䜓を、R′4NFKFR″Li等
R′R″は炭玠数が〜個のアルキル基又はフ
゚ニル基の脱シリル化剀の存圚䞋で脱シリル化
させるこずにより埗るこずができる。ただし、脱
シリル化剀ずしおKFを甚いる堎合は、クラりン
化合物ずずもに䜿甚するこずが奜たしい。 以䞊、本発明のゞ゚チニルベンれン誘導䜓を䞎
える方法の䞀䟋を述べたが、これにより補造方法
を限定するものではない。 発明の効果 本発明のゞ゚チニルベンれン誘導䜓は、薄膜圢
成が可胜であり、又非昇華性である。埓぀お本発
明のゞ゚チニルベンれン誘導䜓は、薄膜にするこ
ずにより、パタヌン圢成材料、感熱材料ずしお䜿
甚するこずがおき、たた重合䜓にするこずによ
り、有機半導䜓、導電材料等の電子材料ずしおの
応甚に甚いるこずができる。 たた、本発明のゞ゚チニルベンれン誘導䜓は、
たずえばオゟン酞化等の酞化反応により、分子末
端のビニル基をカルボキシル基に倉換しお䞡芪媒
性化合物を補造するこずができ、この䞡芪媒性化
合物を甚いお、LB膜を䜜補するこずにより、パ
タヌン圢成材料、導電材料のような電子材料、或
いは非線圢光孊材料のようなオプト゚レクトロニ
クス材料ぞ応甚するこずができる。 以䞋実斜䟋により本発明をさらに詳现に説明す
る。 実斜䟋  パラヌゞ゚チニルベンれン0.2モルを充分に脱
氎したテトラヒドロフラン350mlに溶かし、−78℃
で゚チルマグネシりムプロミド0.4モルを添加し
お25℃で時間反応させた。次にこの反応液を再
び−78℃に冷华し、トリメチルシリルクロリド
0.4モルを添加しお25℃で時間反応させ、ビス
−トリメチルシリル゚チニル−ベンれンを埗
た。 たたω−ヘプタデセニルアルコヌル0.04モルを
ビリゞン30mlに溶かし、反応容噚を氷济に浞しな
がら、トリ゚ンスルホニルクロリドトシルクロ
リド0.045モルを加えお15℃で24時間反応させ
お、ヘプタデセニルトシレヌトを埗た。 次にビス−トリメチルシリル−ベンれン0.01
モルを十分に脱氎したテトラヒドロフラン60mlに
溶かし、−78℃でメチルリチりム0.01モルを添加
しお25℃で時間反応させた。この反応液を再び
−78℃に冷华し、ヘキサメチルホスホルアミド35
mlずヘプタデセニルトシレヌト0.01モルを添加し
お25℃で時間反応させた。この反応液に、炭酞
氎玠ナトリりム飜和氎溶液250mlずゞ゚チル゚ヌ
テル180mlを加えお充分に振ずうし゚ヌテル盞に
生成物を抜出した。゚ヌテル盞を塩化ナトリりム
飜和氎溶液で掗浄した埌、硫酞マグネシりムで脱
氎した。この゚ヌテル溶液を濃瞮しお癜黄色結晶
を埗た。GPCによる粟補により−18−ノナ
デセン−−むニル−−トリメチルシリル゚
チニル−ベンれン の癜色結晶40m molを埗た。 この結晶に぀いおIRスペクトル、1−NMRス
ペクトルを枬定し、その構造に぀いお調べた。
KBr錠剀法によるIRスペクトル、を第図に瀺
した。このスペクトルからわかるように、ベンれ
ン環及び分子末端のビニル基、の−䌞瞮振動
が3020〜3080cm-1に、メチレル基の−䌞瞮振
動が28502920cm-1にメチル基の−䌞瞮振動が
2960cm-1に、−≡−の≡䌞瞮振動が2150
cm-1に、ビニル基、のの䌞瞮振動が1640cm
−に、ベンれン環の骚栌振動が1490cm-1に、ベン
れン環の−面倖倉角振動が、840cm-1に芳枬
された。たた、Si−CH3のメチル基由来の1400cm
−1240cm-1Si−䌞瞮振動由来の860cm-1
吞収が芳枬された。 重クロロホルム溶液で枬定した1−NMRス
ペクトルを第図に瀺した。このスペクトルから
わかるように、ベンれン環のプロトンが7.44ppm
に、ビニル基のCH−のプロトンが5.9ppmに、
ビニルのCH2のプロトンが5.2ppmに、−≡
−基に隣接するメチレン基のプロトンが2.4ppm
に、ビニル基に隣接するメチレン基のプロトンが
2.0ppmに、その他のメチレン基のプロトンが0.8
〜1.8ppmに、トリメチルシリル基のプロトンが
0.04ppmにそれぞれ26
のシグナル積分床比で芳枬された。 圓該化合物をオゟン酞化しおビニル基をカルボ
キシル基に倉換するこずにより、䞡芪媒性のゞ゚
チニルベンれン誘導䜓のカルボン酞を合成するこ
ずができた。 こうしお埗られたゞ゚チニルベンれン誘導䜓の
カルボン酞を甚いお、LB法によりSiO2被芆シリ
コンり゚ハ−䞊に59局の环積膜を䜜補した。この
LB膜をフオトレゞスト甚にマスクで芆い、100W
䜎圧氎銀灯で分間露光した埌、゚タノヌルで
分間珟像した結果、未露光郚分のみ゚タノヌルに
溶解し、ネガ型パタヌンを圢成するこずができ
た。 実斜䟋  実斜䟋の方法で埗た−18−ノナデセン−
−むニル−−トリメチルシリル゚チニル−
ベンれン20m molのテトラヒドロフラン溶液に、
C4H94NFのテトラヒドロフラン溶液を、C4
H94NFがトリメチルシリル基の25圓量ずなるよ
うに加えお、25℃で20時間攪拌しお脱シリル化反
応を行぀た。次に、この反応液䞭に少量の氎を加
えお充分に振盪した埌゚ヌテル局を分離した。こ
の操䜜を繰り返しお゚ヌテル局を合わせ、濃瞮し
お−゚チニル−−18ノナデセン−−むニ
ル−ベンれン の癜色結晶30m molを埗た。IRスペクトルから、
ベンれン環及びビニル基の−䌞瞮振動が3020
〜3080cm-1に、メチレン基の−䌞瞮振動が
28502920cm-1に、゚チニル基の−䌞瞮振動及
び≡䌞瞮振動がそれぞれ3300cm-12150cm-1
に、ビニル基の䌞瞮振動が1640cm-1に、ベ
ンれン環の骚栌振動及び−面倖倉角振動がそ
れぞれ1490cm-1840cm-1芳枬された。 1−NMRスペクトルを第図に瀺した。こ
のスペクトルからわかるように、ベンれン環のプ
ロトンが7.44ppmに、ビニル基のCH−プロト
ン及びCH2のプロトンがそれぞれ5.0ppm
5.2ppmに、分子末端の゚チニル基のプロトンが
3.1ppmに、−≡−に隣接するメチレン基のプ
ロトンが2.4ppmに、ビニル基に隣接するメチレ
ン基のプロトンが2.0ppmに、その他のメチレン
基のプロトンが0.8〜1.8ppmに、それぞれ
26のシグナル積分匷床比で
芳枬された。圓該化合物をオゟン酞化しおビニル
基をカルボキシル基に倉換するこずにより、䞡芪
媒性のゞ゚チニルベンれン誘導䜓のカルボン酞を
合成するこずができた。 こうしお埗られたゞ゚チニルベンれン誘導䜓の
カルボン酞を甚いお、LB法によりSiO2被芆シリ
コンり゚ハヌ䞊に59局の环積膜を䜜補した。この
LB膜をフオトレゞスト甚のマスクで芆い、100W
䜎圧氎銀灯で分間露光した埌、゚タノヌルで
分間珟像した結果、未露光郚分のみ゚タノヌルに
溶解し、ネガ型のパタヌンを圢成するこずができ
た。 実斜䟋  実斜䟋においお、ω−ヘプタデセニルアルコ
ヌルの代わりにω−りンデシレニルアルコヌルを
甚いお同様の反応を行い、たず−12−トリデ
セン−−むニル−−トリメチルシリル゚チ
ニル−ベンれン 46m molを埗た。この化合物を実斜䟋におい
お−18−ノナデセン−−むニル−−ト
リメチルシリル゚チニル−ベンれンの代わりに
甚いお、−゚チニル−−12−トリデセン−
−むニル−ベンれン 34m molを埗た。IRスペクトルから、ベンれン
環及びビニル基の−䌞瞮振動が3020〜3080cm
−に、メチレン基の−䌞瞮振動が28502920cm
−に、゚チニル基の−䌞瞮振動及び≡䌞
瞮振動がそれぞれ3300cm-12150cm-1に、ビニル
基の≡䌞瞮振動が1640cm-1に、ベンれン環の
骚栌振動及び−面倖倉角振動がそれぞれ1490
cm-1840cm-1に芳枬された。1−NMRスペクト
ルから、ベンれン環のプロトンが7.44ppmに、ビ
ニル基のCH−のプロトン及びCH2のプロト
ンがそれぞれ5.9ppm5.2ppmに、分子末端の゚
チニル基のプロトンが3.1ppmに、−≡−に隣
接するメチレン基のプロトンが2.4ppmに、ビニ
ル基に隣接するメチレン基のプロトンが2.0ppm
に、その他のメチレン基のプロトンが0.8〜
1.8ppmに、それぞれ
14のシグナル積分匷床比で芳枬された。圓該化合
物をオゟン酞化しおビニル基をカルボキシル基に
倉換するこずにより、䞡芪媒性のゞ゚チニルベン
れン誘導䜓のカルボン酞を合成するこずができ
た。 こうしお埗られたゞ゚チニルベンれン誘導䜓の
カルボン酞を甚いおLB法によりSiO2被芆シリコ
ンり゚ハ−䞊に59局の环積膜を䜜補した。この
LB膜をフオトレゞスト甚のマスクを芆い、100w
䜎圧氎銀灯で分間露光した埌、゚タノヌルで
分間珟像した結果、未露光郚分のみ゚タノヌルに
溶解し、ネガ型のパタヌンを圢成するこずができ
た。 実斜䟋  実斜䟋においお、トリメチルシリルクロリド
の代わりにクロロトリ゚チルシランを甚いお同様
の反応を行い、ビス−トリ゚チルシリル゚チニ
ル−ベンれンを埗た。この化合物を実斜䟋に
おいお、ビス−トリメチルシリル゚チニル−ベ
ンれンの代わりに甚いお同様の反応を行い、−
18−シナデセン−−むニル−−トリ゚チ
ルシリル゚チニル−ベンれンの癜色結晶38m
molを埗た。 KBr錠剀法によるIRスペクトルからベンれン
環及び分子末端のビニル基の−䌞瞮振動が
3020〜3080cm-1に、メチレン基のcC−䌞瞮振
動が28502920cm-1に、メチル基の−䌞瞮振動
が2960cm-1に、−≡−の≡䌞瞮振動が
1640cm-1に、ビニル基の䌞瞮振動が1640cm
−にベンれン環の骚栌振動が1490cm-1に、ベンれ
ン環の−面倖倉角振動が840cm-1に芳枬され
た。たた、Si−CH2CH3のメチレン基由来の1408
cm-11234cm-1Si−䌞瞮振動由来の860cm-1
の吞収が芳枬された。たた1−NMRスペクト
ルから、ベンれン環のプロトンが7.44ppmに、ビ
ニル基のCH−のプロトンが5.9ppmに、ビニル
基のCH2のプロトンが5.2ppmに、−≡−基
に隣接するメチレン基のプロトンが2.4ppmに、
ビニル基に隣接するメチレン基のプロトンが
2.0ppmに、その他のメチレン基のプロトンが0.8
〜1.8ppmに、トリ゚チルシリル基のメチル基及
びメチレン基のプロトンがそれぞれ0.9ppm
0.6ppmに、それぞれ26
シグナル積分匷床比で芳枬された。 圓該化合物をオゟン酞化しおビニル基をカルボ
キシル基に倉換するこずにより、䞡芪媒性のゞ゚
チニルベンれン誘導䜓のカルボン酞を合成するこ
ずができた。 こうしお埗られたゞ゚チニルベンれン誘導䜓の
カルボン酞を甚いお、LB法によりSiO2被芆シリ
コンり゚ハヌ䞊に59局の环積膜を䜜補した。この
LB膜をフオトレゞスト甚のマスクで芆い、100W
䜎圧氎銀灯で分間露光した埌、゚タノヌルで
分間珟像した結果、未露光郚分のみ゚タノヌルに
溶解し、ネガ型パタヌンを圢成するこずができ
た。 実斜䟋  実斜䟋においお、トリメチルシリルクロリド
の代わりにクロロトリヘプチルシランを甚いお同
様の反応を行い、ビス−トリヘプチルシリル゚
チニル−ベンれンを埗た。この化合物を実斜䟋
においお、ビス−トリメチルシリル゚チニル
−ベンれンの代わりに甚いお同様の反応を行い、
−18−ノナデセン−−むニル−−トリ
ヘプチルシクル゚チニル−ベンれンの癜色結晶
24m molを埗た。 圓該化合物をオゟン酞化しおビニル基をカルボ
キシル基に倉換するこずにより、䞡芪媒性のゞ゚
チニルベンれン誘導䜓のカルボン酞を合成するこ
ずができる。 こうしお埗られたゞ゚チニルベンれン誘導䜓の
カルボン酞を甚いお、LB法によりSiO2被芆シリ
コンり゚ハヌ䞊に39局の环積膜を䜜補した。この
LB膜をフオトレゞスト甚のマスクで芆い、100W
䜎圧氎銀灯で分間露光した埌、゚タノヌルで
分間珟像した結果、未露光郚分のみ゚タノヌルに
溶解し、ネガ型のパタヌンを圢成するこずができ
た。 実斜䟋  たず、ω−トリコセノむツクアシド CH2CH−CH220−COOHをリチりムアルミ
ニりムハむドラむドで還元しお、ω−トリコセニ
ルアルコヌルCH2CH−CH221−OHを埗た。
このω−トリコセニルアルコヌルを、実斜䟋に
おいおω−ヘプタデセニルアルコヌルの代わりに
甚いお同様の反応を行い、たず−24−ペンタ
コセン−−むニル−−トリメチルシリル゚
チニル−ベンれン 40m molを埗た。この化合物を実斜䟋におい
お、−18−ノナデセン−−むニル−−
トリメチルシリル゚チニル−ベンれンの代わり
に甚いお同様の反応を行い、−゚チニル−−
24−ペンタコセン−−むニル−ベンれン 15m mol埗た。圓該化合物をオゟン酞化しおビ
ニル基をカルボキシル基に倉換するこずにより、
䞡芪媒性のゞ゚チニルベンれン誘導䜓のカルボン
酞を合成するこずができた。 こうしお埗られたゞ゚チニルベンれン誘導䜓の
カルボン酞を甚いお、LB法によりSiO2被芆シリ
コンり゚ハヌ䞊に59局の环積膜を䜜補した。この
LB膜をフオトレゞスト甚のマスクで芆い、100W
䜎圧氎銀灯で分間露光した埌、゚タノヌルで
分間珟像した結果、未露光郚分のみ゚タノヌルに
溶解し、ネガ型のパタヌンを圢成するこずができ
た。
Compounds like [Formula] are already known [JK Crandall et al.
Journal of American Chemical Society, 97
(24), 7171-2 (1975); EARunova et al., Vestn.
Mosk.Univ., Ser.2: Khim., 24(3), 299-300
(1983) etc.]. Diethynylbenzene compounds are resistant to gamma rays, electron beams,
It is sensitive to energy irradiation such as ultraviolet rays, visible light, and infrared rays (heat), but its small molecular weight makes it difficult to produce high-quality thin films, and its sublimation property makes it difficult to handle under reduced pressure. It was hot. The application of the LB method to the production of thin films of compounds with a diethynylbenzene structure is considered, but no diethynylbenzene compounds with the amphiphilic properties necessary for the production of LB films are known, nor are the raw materials for their production known. . (Means for Solving the Problems) In view of these problems, the present inventors developed a diethynylbenzene compound that can be made into a thin film, is non-sublimable, and is applicable to the LB technology. As a result of intensive studies to obtain a diethynylbenzene compound which is a raw material for producing a medium compound, the diethynylbenzene derivative of the present invention was finally obtained. That is, the present invention provides a novel diethynyl compound represented by the general formula below, which has a diethynylbenzene structure and a methylene chain in the molecule, a vinyl group at one molecular end, and a hydrogen or alkylsilyl group at the other molecular end. Regarding benzene derivatives. [R in the formula is hydrogen or -SiX 1 X 2 X 3 , X 1 , X 2 ,
X 3 is each independently hydrogen or an alkyl group having 1 to 7 carbon atoms (except when X 1 , X 2 , and X 3 are all hydrogen), and n is an integer of 9 or more and 21 or less. ] Due to its molecular structural characteristics, the diethynylbenzene derivative of the present invention has C-H stretching vibrations of the benzene ring and vinyl group, C-H stretching vibrations of the methylene group, and C≡C stretching vibrations of 3000 to 3000, respectively, in the IR absorption spectrum. 3080cm -1 , 28502960cm -1 , 2010
Observed at 2260cm -1 I. In addition, absorption peculiar to the benzene ring is observed near 1600 cm -1 and 1500 cm -1 , and C-H out-of-plane bending vibration of the benzene ring is observed between 690 and 860 cm -1 . In addition, in the 1 H-NMR spectrum, the = CH2 and -CH=C protons of the benzene ring and vinyl group are 6.9 to 7.8 ppm, 3.9 to 6.4 ppm, and 3.9 to 6.4 ppm, respectively.
5.3 to 7.3 ppm, and the protrons of methylene groups adjacent to C≡C, methylene groups adjacent to vinyl groups, and other methylene groups are 2.2 to 7.3 ppm, respectively.
Observed at 2.5ppm, 1.8~2.2ppm, and 0.6~1.9ppm. In addition, IR absorption due to the structure of substituent R, 1
H-NMR signals are also observed in each spectrum. In the general formula of the diethynylbenzene derivative of the present invention, the substituent R is hydrogen or -SiX 1 X 2 X 3 , and examples of -SiX 1 X 2 group, tributylsilyl group, triheptylsilyl group, diethylsilyl group, etc. Furthermore, the substitution mode of the two ethynyl groups on the benzene ring may be any of ortho, meta, and para. The diethynylbenzene derivative of the present invention is solid at 15°C and is soluble in solvents such as acetone, methyl ethyl ketone, ethanol, ethyl acetate, chloroform, benzene, and hexane. Next, an example of the method for synthesizing the diethynylbenzene derivative of the present invention will be explained. First, a scheme of the synthesis reaction is shown below. First, using diethynylbenzene 1 as one of the starting materials, two ethynyl groups of diethynylbenzene are metal-halogenated by the Grignard method to obtain compound 2. This compound 2 is converted into X 1 X 2 X 3 SiCl (X 1 ,
X 2 and X 3 are each independently hydrogen or have a carbon number of 1 to
7 alkyl group, X 1 , X 2 , X 3
are not all hydrogen at the same time),
Bisalkylsilylated ethynylbenzene 3 Synthesize. On the other hand, alkenyl alcohol 4 CH 2 = CH- (CH 2 ) o -OH (where n is 9
21 or less) as another starting material and reacted with tosyl chloride to form alkenyl tosylate 5 CH 2 =CH-(CH 2 ) o -OT s (where n is an integer of 9 or more and 21 or less, T s is a tosyl group)
Synthesize. By desilylating one of the alkylsilyl groups of the bisalkylsilylated ethynylbenzene 3 and alkenyl tosylate 5 described above using methyllithium or the like to obtain an organometallic compound 6, and reacting it with the alkenyl tosylate 5, the present invention can be obtained. R of the invention is -SiX 1 X 2 X 3 ( X 1 ,
A diethynylbenzene derivative 7 can be synthesized in which X 2 and X 3 are not all hydrogen at the same time. Moreover, the diethynylbenzene derivative of the present invention in which R is hydrogen, R is an alkylsilyl group, -SiX 1
The above derivative of X 2 It can be obtained by desilylation. However, when using KF as a desilylating agent, it is preferable to use it together with a crown compound. Although an example of the method for producing the diethynylbenzene derivative of the present invention has been described above, the production method is not limited thereto. (Effects of the Invention) The diethynylbenzene derivative of the present invention is capable of forming a thin film and is non-sublimable. Therefore, the diethynylbenzene derivative of the present invention can be used as a pattern-forming material or a heat-sensitive material by forming a thin film, and can be applied as an electronic material such as an organic semiconductor or a conductive material by forming a polymer. It can be used for. Furthermore, the diethynylbenzene derivative of the present invention is
For example, an amphipathic compound can be produced by converting the vinyl group at the end of the molecule into a carboxyl group through an oxidation reaction such as ozone oxidation. It can be applied to forming materials, electronic materials such as conductive materials, or optoelectronic materials such as nonlinear optical materials. The present invention will be explained in more detail with reference to Examples below. Example 1 0.2 mol of p-diethynylbenzene was dissolved in 350 ml of sufficiently dehydrated tetrahydrofuran and heated to -78°C.
Then, 0.4 mol of ethylmagnesium bromide was added and reacted at 25°C for 1 hour. Next, this reaction solution was cooled again to -78℃, and trimethylsilyl chloride was added.
0.4 mol was added and reacted at 25°C for 2 hours to obtain bis-(trimethylsilylethynyl)-benzene. Additionally, 0.04 mol of ω-heptadecenyl alcohol was dissolved in 30 ml of pyridine, and while the reaction vessel was immersed in an ice bath, 0.045 mol of trienesulfonyl chloride (tosyl chloride) was added and reacted at 15°C for 24 hours. Got the rate. Next, bis-(trimethylsilyl)-benzene 0.01
mol was dissolved in 60 ml of sufficiently dehydrated tetrahydrofuran, 0.01 mol of methyllithium was added at -78°C, and the mixture was reacted at 25°C for 2 hours. The reaction solution was cooled again to -78°C, and hexamethylphosphoramide 35
ml and 0.01 mol of heptadecenyl tosylate were added and reacted at 25°C for 1 hour. To this reaction solution were added 250 ml of a saturated aqueous solution of sodium bicarbonate and 180 ml of diethyl ether, and the mixture was thoroughly shaken to extract the product into the ether phase. The ether phase was washed with a saturated aqueous sodium chloride solution and then dehydrated with magnesium sulfate. This ether solution was concentrated to give white yellow crystals. Purification by GPC yielded 1-(18-nonadecen-1-ynyl)-4-(trimethylsilylethynyl)-benzene. 40 mmol of white crystals were obtained. The IR spectrum and 1 H-NMR spectrum of this crystal were measured to investigate its structure.
The IR spectrum obtained by the KBr tablet method is shown in Figure 1. As can be seen from this spectrum, the C-H stretching vibration of the benzene ring and the vinyl group at the end of the molecule is 3020 to 3080 cm -1 , and the C-H stretching vibration of the methyler group is 2850 to 2920 cm -1. The vibration
At 2960cm -1 , the C≡C stretching vibration of -C≡C- is 2150
In cm -1 , the C=C stretching vibration of vinyl group is 1640 cm
-1 , the skeletal vibration of the benzene ring was observed at 1490 cm -1 and the C-H out-of-plane bending vibration of the benzene ring was observed at 840 cm -1 . In addition, 1400cm derived from the methyl group of Si- CH3
-1 , 1240cm -1 , 860cm -1 K derived from Si-C stretching vibration
Absorption was observed. The 1 H-NMR spectrum measured with a deuterated chloroform solution is shown in Figure 2. As you can see from this spectrum, the benzene ring proton is 7.44ppm
, the =CH- proton of the vinyl group is 5.9 ppm,
The =CH 2 proton of vinyl is 5.2ppm, -C≡C
The proton of the methylene group adjacent to the − group is 2.4 ppm
, the proton of the methylene group adjacent to the vinyl group is
2.0 ppm, and 0.8 protons of other methylene groups
At ~1.8ppm, protons of trimethylsilyl group
0.04ppm respectively 4:1:2:2:2:26:9
It was observed with a signal integration degree ratio of . By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphiphilic diethynylbenzene derivative carboxylic acid could be synthesized. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a mask for photoresist and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 2 1-(18-nonadecene-1 obtained by the method of Example 1)
-ynyl)-4-(trimethylsilylethynyl)-
In a solution of 20 mmol of benzene in tetrahydrofuran,
A solution of (C 4 H 9 ) 4 NF in tetrahydrofuran, (C 4
H 9 ) 4 NF was added in an amount of 25 equivalents of the trimethylsilyl group, and the mixture was stirred at 25° C. for 20 hours to carry out a desilylation reaction. Next, a small amount of water was added to this reaction solution, and after thorough shaking, the ether layer was separated. Repeat this operation to combine the ether layers and concentrate to obtain 1-ethynyl-4-(18nonadecen-1-ynyl)-benzene. 30 mmol of white crystals were obtained. From the IR spectrum,
C-H stretching vibration of benzene ring and vinyl group is 3020
At ~3080cm -1 , the C-H stretching vibration of the methylene group
At 28502920 cm -1 , the C-H stretching vibration and C≡C stretching vibration of the ethynyl group are 3300 cm -1 and 2150 cm -1, respectively.
In addition, the C=C stretching vibration of the vinyl group was observed at 1640 cm -1 , and the skeletal vibration and C-H out-of-plane bending vibration of the benzene ring were observed at 1490 cm -1 and 840 cm -1 I, respectively. The 1 H-NMR spectrum is shown in Figure 3. As can be seen from this spectrum, the benzene ring proton is at 7.44 ppm, the vinyl group's =CH- proton and = CH2 proton are each at 5.0 ppm,
At 5.2ppm, the proton of the ethynyl group at the end of the molecule
3.1 ppm, protons of the methylene group adjacent to -C≡C- are 2.4 ppm, protons of the methylene group adjacent to the vinyl group are 2.0 ppm, protons of other methylene groups are 0.8 to 1.8 ppm, and 4 ppm, respectively. :
It was observed with a signal integrated intensity ratio of 1:2:1:2:2:26. By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphiphilic diethynylbenzene derivative carboxylic acid could be synthesized. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a photoresist mask and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 3 A similar reaction was carried out in Example 1 using ω-undecylenyl alcohol instead of ω-heptadecenyl alcohol, and first 1-(12-tridecen-1-ynyl)-4-trimethylsilylethynyl ) - benzene 46 mmol was obtained. This compound was used in Example 2 instead of 1-(18-nonadecen-1-ynyl)-4-(trimethylsilylethynyl)-benzene, and 1-ethynyl-4-(12-tridecen-
1-ynyl)-benzene Obtained 34m mol. From the IR spectrum, the C-H stretching vibration of the benzene ring and vinyl group is 3020 to 3080 cm
-1 , the C-H stretching vibration of the methylene group is 28502920cm
-1 , the C-H stretching vibration and C≡C stretching vibration of the ethynyl group are at 3300 cm -1 and 2150 cm -1 , respectively, the C≡C stretching vibration of the vinyl group is at 1640 cm -1 , the skeletal vibration of the benzene ring, and the C -H out-of-plane bending vibration is 1490 each
cm -1 , observed at 840 cm -1 . From the 1 H-NMR spectrum, the benzene ring proton is 7.44 ppm, the =CH- proton and = CH2 proton of the vinyl group are 5.9 ppm and 5.2 ppm, respectively, and the proton of the ethynyl group at the end of the molecule is 3.1 ppm. , the proton of the methylene group adjacent to -C≡C- is 2.4 ppm, and the proton of the methylene group adjacent to the vinyl group is 2.0 ppm.
In addition, the protons of other methylene groups are 0.8~
1.8ppm, respectively 4:1:2:1:2:2:
A signal integrated intensity ratio of 14 was observed. By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphiphilic diethynylbenzene derivative carboxylic acid could be synthesized. Using the diethynylbenzene derivative carboxylic acid thus obtained, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the photoresist mask with LB film and apply 100w
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 4 The same reaction as in Example 1 was carried out using chlorotriethylsilane instead of trimethylsilyl chloride to obtain bis-(triethylsilylethynyl)-benzene. A similar reaction was carried out in Example 1 using this compound in place of bis-(trimethylsilylethynyl)-benzene, and 1-
(18-cinadecen-1-ynyl)-4-(triethylsilylethynyl)-benzene white crystal 38m
I got mol. The C-H stretching vibration of the benzene ring and the vinyl group at the end of the molecule was determined from the IR spectrum obtained by the KBr tablet method.
At 3020 to 3080 cm -1 , the cC-H stretching vibration of the methylene group is at 28502920 cm -1 , the C-H stretching vibration of the methyl group is at 2960 cm -1 , and the C≡C stretching vibration of -C≡C-
At 1640cm -1 , the C=C stretching vibration of the vinyl group is 1640cm
-1 , the skeletal vibration of the benzene ring was observed at 1490 cm -1 and the C-H out-of-plane bending vibration of the benzene ring was observed at 840 cm -1 . In addition, 1408 derived from the methylene group of Si-CH 2 CH 3
cm -1 , 1234cm -1 , 860cm -1 derived from Si-C stretching vibration
absorption was observed. In addition, from the 1H -NMR spectrum, the proton of the benzene ring is 7.44 ppm, the proton of =CH- of the vinyl group is 5.9 ppm, the proton of = CH2 of the vinyl group is 5.2 ppm, and the proton of the -C≡C- group is The proton of the adjacent methylene group is 2.4 ppm,
The proton of the methylene group adjacent to the vinyl group
2.0 ppm, and 0.8 protons of other methylene groups
~1.8ppm, the protons of the methyl group and methylene group of the triethylsilyl group are each 0.9ppm,
0.6ppm, respectively 4:1:2:2:2:26:
Observed with a signal integrated intensity ratio of 9:6. By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphiphilic diethynylbenzene derivative carboxylic acid could be synthesized. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a photoresist mask and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 5 The same reaction as in Example 1 was carried out using chlorotriheptylsilane instead of trimethylsilyl chloride to obtain bis-(triheptylsilylethynyl)-benzene. This compound was used in Example 1 as bis-(trimethylsilylethynyl)
- Carry out a similar reaction using instead of benzene,
White crystals of 1-(18-nonadecen-1-ynyl)-4-(triheptylcycluethynyl)-benzene
24 mmol was obtained. By converting the vinyl group into a carboxyl group by ozone oxidation of the compound, an amphipathic diethynylbenzene derivative carboxylic acid can be synthesized. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 39-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a photoresist mask and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed. Example 6 First, ω-tricosenyl alcohol CH 2 =CH-(CH 2 ) 20 -COOH is reduced with lithium aluminum hydride to form ω-tricosenyl alcohol CH 2 =CH-(CH 2 ) 21 -OH I got it.
A similar reaction was carried out using this ω-tricocenyl alcohol in place of ω-heptadecenyl alcohol in Example 1. First, 1-(24-pentacocen-1-ynyl)-4-trimethylsilylethynyl)- benzene 40mmol was obtained. This compound was used in Example 2 as 1-(18-nonadecen-1-ynyl)-4-
A similar reaction was carried out using (trimethylsilylethynyl)-benzene instead of 1-ethynyl-4-
(24-pentacocen-1-ynyl)-benzene 15mmol was obtained. By oxidizing the compound with ozone and converting the vinyl group into a carboxyl group,
We were able to synthesize amphiphilic diethynylbenzene derivative carboxylic acid. Using the thus obtained diethynylbenzene derivative carboxylic acid, a 59-layer cumulative film was fabricated on a SiO 2 -coated silicon wafer by the LB method. this
Cover the LB film with a photoresist mask and apply 100W
After 1 minute exposure with a low pressure mercury lamp, 1 minute exposure with ethanol
As a result of developing for a minute, only the unexposed areas were dissolved in ethanol, and a negative pattern could be formed.

【図面の簡単な説明】[Brief explanation of drawings]

第図はKBr錠剀法により枬定した−18−
ノナデセン−−むニル−−トリトメチルシ
リル゚チニル−ベンれンのIRスペクトル、第
図は重クロロホルム䞭での−18−ノナデセン
−−むニル−−トリメチルシリル゚チニ
ル−ベンれンの1−NMRスペクトル、第図
は重クロロホルム䞭での−゚チニル−−18
−ノナデセン−−むニル−ベンれンの1−
NMRスペクトルである。
Figure 1 shows 1-(18-
IR spectrum of nonadecen-1-ynyl)-4-(tritomethylsilylethynyl)-benzene, 2nd
The figure shows the 1 H-NMR spectrum of 1-(18-nonadecen-1-ynyl)-4-(trimethylsilylethynyl)-benzene in deuterated chloroform, and Figure 3 shows the 1-ethynyl-4-( 18
-nonadecen-1-ynyl)-benzene 1H-
This is an NMR spectrum.

Claims (1)

【特蚱請求の範囲】  䞀般匏 〔匏䞭のは氎玠又は−SiX1X2X3で、X1
X2X3はそれぞれ独立に氎玠又は炭玠数が〜
のアルキル基ただし、X1X2X3がすべお
氎玠の堎合は陀くで、か぀は以䞊21以䞋の
敎数である〕で衚されるゞ゚チニルベンれン誘導
䜓
[Claims] 1. General formula [R in the formula is hydrogen or -SiX 1 X 2 X 3 , X 1 ,
X 2 and X 3 are each independently hydrogen or have a carbon number of 1 to
7 alkyl group (excluding cases where X 1 , X 2 , and X 3 are all hydrogen), and n is an integer of 9 or more and 21 or less]
JP1134087A 1987-01-22 1987-01-22 Diethynylbenzene derivative Granted JPS63179836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1134087A JPS63179836A (en) 1987-01-22 1987-01-22 Diethynylbenzene derivative

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1134087A JPS63179836A (en) 1987-01-22 1987-01-22 Diethynylbenzene derivative

Publications (2)

Publication Number Publication Date
JPS63179836A JPS63179836A (en) 1988-07-23
JPH0433772B2 true JPH0433772B2 (en) 1992-06-04

Family

ID=11775301

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1134087A Granted JPS63179836A (en) 1987-01-22 1987-01-22 Diethynylbenzene derivative

Country Status (1)

Country Link
JP (1) JPS63179836A (en)

Also Published As

Publication number Publication date
JPS63179836A (en) 1988-07-23

Similar Documents

Publication Publication Date Title
JP4642860B2 (en) Novel monomer substituted with photoacid generator of fluoroalkyl sulfone and polymer thereof
EP1444550B1 (en) Polycarbocyclic derivatives for modification of resist, optical and etch resistance properties
KR102776927B1 (en) Composition, resist underlayer, method for forming resist underlayer, method for manufacturing patterned substrate, and compound
JP2005053832A (en) Fullerene derivatives and fullerene composite resists
JPH01100179A (en) Organic metal-containing compound
JPH0433772B2 (en)
KR102894992B1 (en) A tin-cyclosiloxane compound and photoresist composition comprising the same
JPH0244826B2 (en)
JPH0756354A (en) Silicon-containing high molecular compound and resist material using the same
KR100712473B1 (en) Multifunctional Antireflection Film Containing Silicon (Si)
CN104144908A (en) Spirofluorene derivative molecular glass and its preparation method and application in photolithography
KR102686010B1 (en) Novel organotin silicate compounds, preparation methods thereof and photoresist composition containing the same
JPH0412884B2 (en)
JP5292771B2 (en) Fullerene derivatives and solutions and membranes thereof
JPH05202070A (en) Methacrylic group-containing bis (4'-phthalic anhydride) siloxane derivative and method for producing the same
JP4371402B2 (en) Preparation of halogenated aryl-substituted cyclic tetrasiloxanes
SU1073248A1 (en) Carbazole- and anthracene-containing polysiloxanes as substrate to electrophotographic layers and method of producing them
JP2682417B2 (en) Silicon-containing sulfonium salt compound
JP3997387B2 (en) Novel tetrahydrofuran compound having alicyclic structure
JP4058597B2 (en) New indene derivatives
JP2543122B2 (en) Photosensitive polymer, method for producing the same, and pattern forming method
WO2007029442A1 (en) Adamantane derivative and process for producing the same
JPH09110882A (en) Production of benzosilacyclobutene compound and dibenzosilacyclobutene compound
JPS6313446B2 (en)
JP2023166174A (en) Silsesquioxane with cage structure and resist composition

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term