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JPH043672B2 - - Google Patents
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JPH043672B2 - - Google Patents

Info

Publication number
JPH043672B2
JPH043672B2 JP58072688A JP7268883A JPH043672B2 JP H043672 B2 JPH043672 B2 JP H043672B2 JP 58072688 A JP58072688 A JP 58072688A JP 7268883 A JP7268883 A JP 7268883A JP H043672 B2 JPH043672 B2 JP H043672B2
Authority
JP
Japan
Prior art keywords
thin film
metal electrode
metal
photoelectric conversion
organic dye
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58072688A
Other languages
Japanese (ja)
Other versions
JPS59198781A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58072688A priority Critical patent/JPS59198781A/en
Publication of JPS59198781A publication Critical patent/JPS59198781A/en
Publication of JPH043672B2 publication Critical patent/JPH043672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80Constructional details
    • H10K30/81Electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Description

【発明の詳細な説明】 この発明は、光吸収効率を向上させた光電変換
素子に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoelectric conversion element with improved light absorption efficiency.

従来の有機太陽電池に用いる光電変換素子は、
第1図に示すようにガラス基板1の上に半透明ア
ルミニウムの金属電極2、有機色素薄膜3、不透
明銀の金属電極4の順に積み重ねた構造となつて
いる。このような光電変換素子は、金属電極2お
よび金属電極4の表面の形状に特別な考慮を払わ
ないで作成しているため、入射光側の半透明アル
ミニウムの金属電極2も不透明銀の金属電極4
も、いずれもその表面は平滑な平面となつてい
る。
The photoelectric conversion elements used in conventional organic solar cells are
As shown in FIG. 1, it has a structure in which a translucent aluminum metal electrode 2, an organic dye thin film 3, and an opaque silver metal electrode 4 are stacked in this order on a glass substrate 1. Such a photoelectric conversion element is manufactured without paying special consideration to the surface shapes of the metal electrodes 2 and 4, so the translucent aluminum metal electrode 2 on the incident light side is also an opaque silver metal electrode. 4
Both have smooth, flat surfaces.

このため光を吸収した有機色素薄膜3の色素分
子が持つ双極子の内、金属電極2および金属電極
4に対して平行な成分によつて、平滑平面の金属
内に誘起される鏡像関係にある双極子の電場が、
有機色素薄膜3の双極子を打ち消す方向に働くた
め、金属電極2および金属電極4近傍の有機色素
薄膜3では見かけ上、光吸収が減少しており、入
射する光エネルギーの一部しか利用できないとい
う欠点があつた。
Therefore, among the dipoles of the dye molecules of the organic dye thin film 3 that absorbed light, components parallel to the metal electrodes 2 and 4 create a mirror image relationship induced in the smooth plane metal. The electric field of the dipole is
Since it works in the direction of canceling the dipole of the organic dye thin film 3, the organic dye thin film 3 near the metal electrodes 2 and 4 apparently reduces light absorption, and only a part of the incident light energy can be used. There were flaws.

この発明は、上述の点にかんがみてなされたも
ので、メロシアニン色素薄膜のような光電変換素
子に用いられる有機色素薄膜の一面に接する半透
明な金属電極と、他面に接する金属電極のうち、
少なくとも一方の金属電極の有機色素薄膜と接す
る側の表面を微細な凹凸面とすることによつて、
光エネルギーの吸収強度を高めて光電変換効率を
向上させた光電変換素子を提供することを目的と
する。以下、図面に基づいてこの発明を説明す
る。
This invention was made in view of the above points, and includes a translucent metal electrode in contact with one side of an organic dye thin film used in a photoelectric conversion element such as a merocyanine dye thin film, and a metal electrode in contact with the other side.
By making the surface of at least one metal electrode in contact with the organic dye thin film a finely uneven surface,
It is an object of the present invention to provide a photoelectric conversion element with increased absorption intensity of light energy and improved photoelectric conversion efficiency. The present invention will be explained below based on the drawings.

第2図はこの発明の一実施例をなす光電変換素
子の概略構造を示す断面図である。
FIG. 2 is a sectional view showing a schematic structure of a photoelectric conversion element which is an embodiment of the present invention.

ガラス基板11の上に第1層目の半透明の金属
電極12の蒸着法によつて作成する。この蒸着に
際し、金属蒸発源とガラス基板11とは垂直の位
置関係に置かれ、蒸発した金属蒸気はガラス基板
11に垂直に入射して、平滑平面の半透明の金属
電極12が作られる。次に前記金属電極12が蒸
着されたガラス基板11に対して入射角が50度か
ら80度になるようにガラス基板11を蒸発源に対
して斜めに配置して、金属蒸気の蒸着を行う。蒸
発速度とガラス基板11の温度は、金属蒸着薄膜
が島状の構造となるように決める。このようにし
て第2層の凹凸のある金属電極13を作る。金属
電極12の半透明薄膜の厚さはアルミニウムの場
合は80オングストロームから120オングストロー
ムに、金属電極13の半透明薄膜の厚さは同じく
アルミニウムの場合は50オングストロームから90
オングストロームにするのが適している。そし
て、結果的には半透明の金属電極12の表面が微
細な凹凸面となつたことになる。
A first layer of translucent metal electrode 12 is formed on a glass substrate 11 by vapor deposition. During this vapor deposition, the metal evaporation source and the glass substrate 11 are placed in a perpendicular positional relationship, and the evaporated metal vapor is perpendicularly incident on the glass substrate 11 to form a semi-transparent metal electrode 12 with a smooth plane. Next, metal vapor is deposited by arranging the glass substrate 11 obliquely to the evaporation source so that the incident angle to the glass substrate 11 on which the metal electrode 12 is evaporated is 50 degrees to 80 degrees. The evaporation rate and the temperature of the glass substrate 11 are determined so that the metal evaporated thin film has an island-like structure. In this way, the second layer of metal electrode 13 having projections and depressions is formed. The thickness of the translucent thin film of the metal electrode 12 is from 80 angstroms to 120 angstroms in the case of aluminum, and the thickness of the semitransparent thin film of the metal electrode 13 is also from 50 angstroms to 90 angstroms in the case of aluminum.
Angstrom is suitable. As a result, the surface of the semi-transparent metal electrode 12 becomes a finely uneven surface.

次に、有機色素薄膜14を蒸着する。ころ場
合、ガラス基板11に金属電極12および金属電
極13を形成したガラス基板11は蒸発源に対し
て垂直の位置関係になるように置かれる。有機色
素薄膜14の厚みは300から600オングストローム
が最適である。また、有機色素薄膜14は十分に
薄いので、膜の表面は下地である金属電極13の
表面の凹凸の影響が残り凹凸となつている。従つ
て、対向する金属電極15も垂直に蒸着すれば有
機色素薄膜14との界面では凹凸となる。
Next, an organic dye thin film 14 is deposited. In this case, the glass substrate 11 on which the metal electrodes 12 and 13 are formed is placed so as to be perpendicular to the evaporation source. The optimal thickness of the organic dye thin film 14 is 300 to 600 angstroms. Furthermore, since the organic dye thin film 14 is sufficiently thin, the surface of the film is uneven due to the influence of the unevenness of the surface of the underlying metal electrode 13. Therefore, if the opposing metal electrode 15 is also vertically deposited, the interface with the organic dye thin film 14 will be uneven.

次に上記実施例に示す光電変換素子の動作につ
いて説明する。光を吸収した有機色素薄膜14の
色素分子は双極子と見なせる。色素分子が金属電
極13および金属電極15近傍にある場合、金属
内に鏡像関係に双極子を誘起する。色素分子の双
極子のうち金属電極13および金属電極15の表
面に平行な成分は、金属内に逆方向に誘起する双
極子を作りヽ色素分子の双極子を打ち消し、見か
け上光の吸収を減らすことになる。しかし、上記
実施例の金属電極構成は表面に凹凸が存在するた
め、この金属電極13および15内に誘起される
双極子の大きさが制限され、誘起双極子は平滑平
面電極にくらべて小さくなる。これにより、有機
色素薄膜14内の色素分子の双極子を打ち消すこ
とがより小さくなり、見かけ上光吸収の増大を図
ることができる。
Next, the operation of the photoelectric conversion element shown in the above embodiment will be explained. The dye molecules of the organic dye thin film 14 that have absorbed light can be regarded as dipoles. When the dye molecules are near the metal electrodes 13 and 15, they induce mirror-image dipoles in the metal. Among the dipoles of the dye molecules, the components parallel to the surfaces of the metal electrodes 13 and 15 create dipoles that are induced in the opposite direction in the metal, canceling the dipoles of the dye molecules and reducing the apparent absorption of light. It turns out. However, since the metal electrode structure of the above embodiment has unevenness on the surface, the size of the dipole induced in the metal electrodes 13 and 15 is limited, and the induced dipole is smaller than that of a smooth plane electrode. . As a result, the dipoles of the dye molecules in the organic dye thin film 14 are less likely to be canceled out, and the apparent light absorption can be increased.

第3図はアルミニウムの金属電極上でのメロシ
アニン色素薄膜の吸収係数の波長依存性を示す図
である。同図において、曲線Aは第2図に示す上
記実施例の構造の光電変換素子の場合を示し、曲
線Bは第1図に示す従来の光電変換素子の場合を
示す。同図から明らかなように、斜めの蒸着法に
よつて半透明アルミニウム金属薄膜で平滑平面な
アルミニウム金属薄膜をおおつた構造の金属電極
を有する上記実施例の場合が、従来の平滑平面の
アルミニウム金属薄膜の金属電極の場合より光吸
収係数が増大する。
FIG. 3 is a diagram showing the wavelength dependence of the absorption coefficient of a merocyanine dye thin film on an aluminum metal electrode. In the figure, curve A shows the case of the photoelectric conversion element having the structure of the above embodiment shown in FIG. 2, and curve B shows the case of the conventional photoelectric conversion element shown in FIG. As is clear from the figure, in the case of the above embodiment in which the metal electrode has a structure in which a smooth plane aluminum metal thin film is covered with a translucent aluminum metal thin film by an oblique vapor deposition method, the conventional smooth plane aluminum metal The light absorption coefficient is increased compared to the case of thin film metal electrodes.

なお、上記の実施例では、半透明の金属電極1
2と金属電極15の両方を凹凸面としたが、これ
はどちらか一方であつても光吸収係数は増大す
る。また、凹凸面の構成は、上述したように微細
な金属粒子を蒸発により付着させるほか、面その
ものを凹凸にしたもよい。
In addition, in the above embodiment, the semitransparent metal electrode 1
Although both the metal electrode 15 and the metal electrode 15 have uneven surfaces, the light absorption coefficient increases even if either one of them has uneven surfaces. Further, the structure of the uneven surface may be formed by attaching fine metal particles by evaporation as described above, or by making the surface itself uneven.

以上詳細に説明したように、この発明は半透明
な金属電極、有機色素薄膜、金属電極とからなる
光電変換素子において、両金属電極の少なくとも
一方の有機色素薄膜と接する側の表面を凹凸面と
したので、有機色素薄膜中の光吸収強度を上げる
ことができ、光電変換効率を向上できる利点があ
る。
As explained in detail above, the present invention provides a photoelectric conversion element comprising a translucent metal electrode, an organic dye thin film, and a metal electrode, in which the surface of at least one of the metal electrodes on the side in contact with the organic dye thin film is made into an uneven surface. Therefore, there is an advantage that the light absorption intensity in the organic dye thin film can be increased and the photoelectric conversion efficiency can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の光電変換素子の構造概略を示す
図、第2図はこの発明の一実施例をなす光電変換
素子の構造の概略を示す図、第3図はアルミニウ
ム金属上でのメロシアニン色素薄膜の光吸収係数
の波長の依存性を示す図である。 図中、11はガラス基板、12,13,15は
金属電極、14は有機色素薄膜である。
Fig. 1 is a diagram showing a schematic structure of a conventional photoelectric conversion element, Fig. 2 is a diagram showing a schematic structure of a photoelectric conversion element constituting an embodiment of the present invention, and Fig. 3 is a diagram showing a schematic structure of a photoelectric conversion element according to an embodiment of the present invention. FIG. 3 is a diagram showing the wavelength dependence of the light absorption coefficient of a thin film. In the figure, 11 is a glass substrate, 12, 13, and 15 are metal electrodes, and 14 is an organic dye thin film.

Claims (1)

【特許請求の範囲】[Claims] 1 半透明な金属電極上に有機色素薄膜が形成さ
れ、この有機色素薄膜上に金属電極が形成された
光電変換素子において、前記両金属電極の少なく
とも一方の前記有機色素薄膜と接する側の表面を
微細な凹凸面としたことを特徴とする光電変換素
子。
1. In a photoelectric conversion element in which an organic dye thin film is formed on a semitransparent metal electrode, and a metal electrode is formed on this organic dye thin film, the surface of at least one of the metal electrodes on the side that is in contact with the organic dye thin film is A photoelectric conversion element characterized by having a finely uneven surface.
JP58072688A 1983-04-25 1983-04-25 Photoelectric conversion element Granted JPS59198781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58072688A JPS59198781A (en) 1983-04-25 1983-04-25 Photoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58072688A JPS59198781A (en) 1983-04-25 1983-04-25 Photoelectric conversion element

Publications (2)

Publication Number Publication Date
JPS59198781A JPS59198781A (en) 1984-11-10
JPH043672B2 true JPH043672B2 (en) 1992-01-23

Family

ID=13496553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58072688A Granted JPS59198781A (en) 1983-04-25 1983-04-25 Photoelectric conversion element

Country Status (1)

Country Link
JP (1) JPS59198781A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005620A (en) 2005-06-24 2007-01-11 Dainippon Printing Co Ltd Organic thin film solar cell

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8629462B2 (en) 2008-06-09 2014-01-14 San Diego State University Research Foundation Organic photovoltaic cell and light emitting diode with an array of 3-dimensionally fabricated electrodes
CN104854721A (en) 2012-12-07 2015-08-19 松下知识产权经营株式会社 Photoelectric conversion element
JP5873847B2 (en) 2013-03-29 2016-03-01 富士フイルム株式会社 Solid-state imaging device and imaging apparatus
JP2024164445A (en) * 2023-05-15 2024-11-27 ソニーセミコンダクタソリューションズ株式会社 Photodetection devices and electronic equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007005620A (en) 2005-06-24 2007-01-11 Dainippon Printing Co Ltd Organic thin film solar cell

Also Published As

Publication number Publication date
JPS59198781A (en) 1984-11-10

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