JPH0438131B2 - - Google Patents
Info
- Publication number
- JPH0438131B2 JPH0438131B2 JP59004111A JP411184A JPH0438131B2 JP H0438131 B2 JPH0438131 B2 JP H0438131B2 JP 59004111 A JP59004111 A JP 59004111A JP 411184 A JP411184 A JP 411184A JP H0438131 B2 JPH0438131 B2 JP H0438131B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- film
- processed
- resist pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明は、パターン形成方法に係わり、被加工
膜のエツチングに先立つレジストパターン形成方
法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a pattern forming method, and more particularly to an improvement in a resist pattern forming method prior to etching a film to be processed.
(ロ) 従来技術
超LSI等を構成する薄膜に微細パターンを蝕刻
する方法としてエツチング液による湿式エツチン
グ法がある。この方法でパターンを形成するに
は、まず被加工膜上にレジスト膜を形成し、次い
で電子線露光装置等で所望のパターンを描画し現
像処理を施してレジストパターンを形成し、次い
でポストベークした後、このレジストパターンを
マスクにしてエツチング液で被加工膜をエツチン
グ除去してパターンを形成している。(b) Prior Art A wet etching method using an etching solution is known as a method for etching fine patterns into thin films constituting VLSIs and the like. To form a pattern using this method, first a resist film is formed on the film to be processed, then a desired pattern is drawn using an electron beam exposure device, etc., a development process is performed to form a resist pattern, and then post-baking is performed. Thereafter, using this resist pattern as a mask, the film to be processed is etched away using an etching solution to form a pattern.
この方法において特に問題となる点は、レジス
トパターンと被加工膜の密着性である。密着性が
悪いと、エツチング時にエツチング液がレジスト
パターン下部に廻り込み、パターン寸法の広がり
や、パターンの消失につながる。 A particular problem in this method is the adhesion between the resist pattern and the film to be processed. If the adhesion is poor, the etching solution will get around to the bottom of the resist pattern during etching, leading to expansion of the pattern dimensions and disappearance of the pattern.
レジストパターンと被加工膜の密着性を高める
方法の一つとして、ポストベークをレジストのガ
ラス転移温度（Tg）より十分高い温度で行うこ
とが有効である。しかしながら、この方法におい
ては、密着性の向上と共にレジストパターンの流
れが起こり、現像によつて形成したレジストパタ
ーンが変形するため初期のパターン形成が困難と
なる問題があつた。 As one method of increasing the adhesion between the resist pattern and the processed film, it is effective to perform post-baking at a temperature sufficiently higher than the glass transition temperature (Tg) of the resist. However, in this method, as the adhesion improves, flow of the resist pattern occurs, and the resist pattern formed by development is deformed, making initial pattern formation difficult.
(ハ) 発明の目的
本発明はこのような点に鑑みて為されたもので
あつてレジストパターンの形状変化を招くことな
くレジストと被加工膜の密着性を高め、良好なパ
ターンを形成することを目的とする。(c) Purpose of the Invention The present invention has been made in view of the above points, and has an object to form a good pattern by increasing the adhesion between the resist and the processed film without causing a change in the shape of the resist pattern. With the goal.
(ニ) 発明の構成
本発明は、レジストパターンをマスクにして被
加工膜をエツチングしてパターンを形成するに際
して、現像処理によつて形成したレジストパター
ン上に、金属薄膜を形成した後、ポストベークを
行うものである。(d) Structure of the Invention The present invention provides a method for forming a pattern by etching a film to be processed using a resist pattern as a mask. This is what we do.
(ホ) 実施例
第１図乃至第４図は、本発明の一実施例による
パターン形成方法を示す工程別断面図であつて、
これ等の図を用いて本発明を詳述する。ガラス基
板１上に被加工膜としてクロミウム２を形成した
基板上にレジストとしてポリメタクリル酸メチル
（PMMA）３を形成し、180℃で60分のプリベー
クを行つてレジスト塗布基板を得る（第１図）。
次に電子線露光装置を用いて所望のパターンをレ
ジスト３に描画し、現像処理してパターン寸法ｘ
のレジストパターン３′を形成する（第２図）。次
いで現像後のレジストパターン３′に厚さ200Åの
クロミウム薄膜４を蒸着した後、180℃でポスト
ベークする。このようにクロミウム薄膜４を蒸着
した状態でポストベークすると、ポストベーク後
のレジストパターン３″は変形せず、しかもクロ
ミウムとの密着性も良好となる（第３図）。しか
る後、クロムエツチング液でレジストパターン
３′上に形成したクロミウム薄膜４と共に被加工
膜のクロミウム膜２をエツチングし、初期レジス
トパターン寸法ｘに忠実な寸法x′のクロムパター
ン２′が得られる（第４図）。(E) Embodiment FIGS. 1 to 4 are cross-sectional views showing each step of a pattern forming method according to an embodiment of the present invention.
The present invention will be explained in detail using these figures. Polymethyl methacrylate (PMMA) 3 is formed as a resist on a glass substrate 1 on which chromium 2 is formed as a film to be processed, and prebaked at 180° C. for 60 minutes to obtain a resist-coated substrate (Fig. 1). ).
Next, a desired pattern is drawn on the resist 3 using an electron beam exposure device, and the pattern size x
A resist pattern 3' is formed (FIG. 2). Next, a chromium thin film 4 having a thickness of 200 Å is deposited on the developed resist pattern 3', and then post-baked at 180°C. If post-baking is performed with the chromium thin film 4 deposited in this way, the resist pattern 3'' after post-baking will not be deformed and will have good adhesion to the chromium (Figure 3). The chromium film 2 to be processed is etched together with the chromium thin film 4 formed on the resist pattern 3' to obtain a chromium pattern 2' having a dimension x' that is faithful to the initial resist pattern dimension x (FIG. 4).
(ヘ) 発明の効果
本発明は以上の説明から明らかな如く、ポスト
ベーク前にレジストパターン上に金属薄膜を形成
してポストベークにおけるレジストの軟化による
レジストパターンの変形を防止している為、レジ
ストパターンの変形を伴わずにレジストと被加工
膜の密着性を高めることが出来、良好なパターン
を形成することが出来る。(f) Effects of the Invention As is clear from the above description, the present invention prevents deformation of the resist pattern due to softening of the resist during post-baking by forming a metal thin film on the resist pattern before post-baking. It is possible to improve the adhesion between the resist and the processed film without deforming the pattern, and it is possible to form a good pattern.
第１図乃至第４図は本発明パターン形成方法を
示す工程別断面図である。
２……クロミウム膜、３……レジスト膜、４…
…クロミウム薄膜。
1 to 4 are cross-sectional views showing each step of the pattern forming method of the present invention. 2...Chromium film, 3...Resist film, 4...
...Chromium thin film.
Claims (1)
ーンに露光した後、該レジストを現像処理してレ
ジストパターンを形成し、次いで蒸着等により上
記レジスト表面に金属薄膜層を形成し、次いで上
記レジストを少なくとも上記レジストのガラス転
移温度以上の温度でポストベークし、然る後エツ
チングにより前記金属薄膜を除去し、続いて前記
レジストパターンをマスクとして前記被加工膜を
エツチングすることを特徴とするパターン形成方
法。1 After exposing the resist coated on the film to be processed into a desired pattern, the resist is developed to form a resist pattern, and then a metal thin film layer is formed on the resist surface by vapor deposition or the like, and then the resist is A pattern forming method characterized by post-baking at a temperature at least higher than the glass transition temperature of the resist, then removing the metal thin film by etching, and then etching the film to be processed using the resist pattern as a mask. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59004111A JPS60148116A (en) | 1984-01-12 | 1984-01-12 | Formation of pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59004111A JPS60148116A (en) | 1984-01-12 | 1984-01-12 | Formation of pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60148116A JPS60148116A (en) | 1985-08-05 |
| JPH0438131B2 true JPH0438131B2 (en) | 1992-06-23 |
Family
ID=11575671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59004111A Granted JPS60148116A (en) | 1984-01-12 | 1984-01-12 | Formation of pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60148116A (en) |
-
1984
- 1984-01-12 JP JP59004111A patent/JPS60148116A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60148116A (en) | 1985-08-05 |
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