JPH0454336B2 - - Google Patents
Info
- Publication number
- JPH0454336B2 JPH0454336B2 JP58123240A JP12324083A JPH0454336B2 JP H0454336 B2 JPH0454336 B2 JP H0454336B2 JP 58123240 A JP58123240 A JP 58123240A JP 12324083 A JP12324083 A JP 12324083A JP H0454336 B2 JPH0454336 B2 JP H0454336B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- target
- current
- polarization
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010287 polarization Effects 0.000 claims description 29
- 238000010894 electron beam technology Methods 0.000 claims description 26
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 1
- 238000005259 measurement Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は電子線のスピン偏極率の2次元面内で
の測定に係り、特にスピン偏極方向の検出に好適
な装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to the measurement of the spin polarization of an electron beam in a two-dimensional plane, and particularly to an apparatus suitable for detecting the direction of spin polarization.
磁化した強磁性体や、重原子からなる物体に電
子線を照射した場合、それらの物体に吸収される
電子線量がスピンに依存することを利用したスピ
ン偏極率検出器は、デイ、テイ、ピアース他、レ
ビユ オフ サイエンス インスツルメント、52
(10)1981、1437D.T.Pierce他、Rev.Sci.
Instrum.52(10)1981、1437に開示されている。
Spin polarization detectors utilize the fact that when an object consisting of a magnetized ferromagnetic material or heavy atoms is irradiated with an electron beam, the amount of electron beam absorbed by the object depends on the spin. Pierce et al., Review of Science Instruments, 52.
(10) 1981, 1437 D. T. Pierce et al., Rev. Sci.
Disclosed in Instrum.52(10) 1981, 1437.
まず、この方法の概略を第1図により説明す
る。第1図に示すように、多結晶の金10の表面
に、その面法線Nとαなる角度をなして電子線e
を入射した場合、該入射電子線eのスピン偏極率
がゼロであれば、該入射電子線eのエネルギーEi
と、多結晶金10に吸収される電流IABを入射電
流IINで規格化した値Is=IAB/IINとの関係は第2
図のIsoで示す直線となる。ただし、第2図はα
=25°の場合を示している。また入射電子線eが、
紙面法線nの方向に+100%または−100%偏極し
ている場合、これらの関係はそれぞれ第2図のIs
↑及びIs↓で示す直線となる。今Isoがゼロとな
る入射エネルギーEiをEipとし、このEipにおける
Is↑、Is↓の値をそれぞれ+Io、−Ioとすると、
エネルギーEipで入射する偏極率が未知の電子線
に対するIs=Isxを測定することにより、紙面法
線nの方向への偏極率P=Isx/Ioを知ることが
できる。 First, the outline of this method will be explained with reference to FIG. As shown in FIG.
If the spin polarization of the incident electron beam e is zero, the energy E i of the incident electron beam e is
The relationship between the current I AB absorbed by the polycrystalline gold 10 and the value Is = I AB /I IN normalized by the incident current I IN is the second
This will be the straight line shown by Iso in the figure. However, in Figure 2, α
= 25° is shown. Moreover, the incident electron beam e is
When the polarization is +100% or -100% in the direction of the paper normal n, these relationships are expressed as Is in Figure 2, respectively.
It becomes a straight line shown by ↑ and Is↓. Let E ip be the incident energy E i at which Iso becomes zero, and at this E ip
If the values of Is↑ and Is↓ are +Io and −Io, respectively,
By measuring Is=Is x for an incident electron beam of unknown polarization with energy Eip , it is possible to know the polarization P=Is x /Io in the direction of the normal n to the paper surface.
しかしながら、この方法は、一次元方向のスピ
ン偏極率しか測定できないこと、多結晶金10の
表面状態の変化により、Eipが大きく変化してし
まうため、安定な測定ができないこと、微小直流
電流を高精度で測定しなければならないこと等の
欠点があつた。 However, this method can only measure spin polarization in one dimension, changes in the surface state of polycrystalline gold 10 greatly change Eip , making stable measurements impossible, and However, there were drawbacks such as the need to measure with high precision.
したがつて、本発明の目的は、スピン偏極率の
2次元面内成分の方向と大きさを、電子線照射物
体の表面状態の変化とは殆ど無関係に高精度で測
定することのできる電子スピン偏極率検出器を提
供することにある。
Therefore, an object of the present invention is to provide an electron beam that can measure the direction and magnitude of a two-dimensional in-plane component of spin polarization with high precision, almost independently of changes in the surface state of an object irradiated with an electron beam. An object of the present invention is to provide a spin polarization detector.
従来の検出器でも、偏極率の絶対値を変えず
に、偏極方向のみを反転させることのできる電子
線に対しては、電子線照射物体の表面状態の変化
に殆ど影響されずに、偏極率測定が可能である。
本発明は偏極方向を反転するかわりに、偏極方向
を一定にしたまま物体への照射方向を変え、等価
的に偏極方向を反転したのと同じ結果を得てい
る。この方式の採用により、従来法ではできなか
つた2次元面内成分の方向と大きさの測定も可能
となつた。
Even with conventional detectors, for electron beams where only the polarization direction can be reversed without changing the absolute value of the polarization rate, it is almost unaffected by changes in the surface state of the object irradiated with the electron beam. Polarization rate measurement is possible.
Instead of reversing the polarization direction, the present invention changes the direction of irradiation onto the object while keeping the polarization direction constant, and obtains the same result as equivalently reversing the polarization direction. By adopting this method, it has become possible to measure the direction and size of two-dimensional in-plane components, which was not possible with conventional methods.
以下、本発明の一実施例を第3図により説明す
る。検出器の中心軸9にそつて入射するスピン偏
極率測定電子線1をコリメータ2でコリメートす
る。図中の矢印Sは入射電子線1のスピン偏極方
向を示している。この電子線1をジエネレータ7
からの移相が90°ずれた正弦波電圧vr、vr′を印加
した2対の互いに直交配置された偏向電極3,
3′間に入射し、中心軸9と電子線1のなす角α
を一定に保つたまま、中心軸9の回りに矢印Rで
示すごとく電子線1を回転させる。さらにこの電
子線1をリング状偏向電極系4,4′によつて作
られた軸対称直流電界Erの内部を通し、中心軸9
に垂直な表面をもつ金多結晶ターゲツト6の上面
に中心軸9となす角αを一定に保つたまま入射方
向のみを回転させながら入射させる。
An embodiment of the present invention will be described below with reference to FIG. A spin polarization measurement electron beam 1 incident along the central axis 9 of the detector is collimated by a collimator 2. An arrow S in the figure indicates the spin polarization direction of the incident electron beam 1. This electron beam 1 is transferred to the generator 7
Two pairs of deflection electrodes 3 arranged perpendicularly to each other to which sinusoidal voltages v r and v r ' with a phase shift of 90° from
3', and the angle α between the central axis 9 and the electron beam 1 is
The electron beam 1 is rotated around the central axis 9 as shown by an arrow R while keeping it constant. Furthermore, this electron beam 1 is passed through the inside of an axially symmetric DC electric field E r created by a ring-shaped deflection electrode system 4, 4', and the central axis 9
The beam is made incident on the upper surface of a gold polycrystalline target 6 having a surface perpendicular to , while only the direction of incidence is rotated while keeping the angle α formed with the central axis 9 constant.
ここで、スピンの方向Sは電子の運動方向と無
関係に一定であるため、回転する電子軌道1に対
して静止する座標系から見ると(すなわち、電子
の入射方向が固定しているとすると)、中心軸9
に対する電子スピン方向Sの向きがターゲツト表
面と平行な面内で(つまり、中心軸9のまわり
に)回転することになる。従つてターゲツト6へ
の吸収電流isは第4図に示すように+inと−inの
間を正弦波的に変化する交流信号となる。シグナ
ルプロセツサ8によつて、ジエネレータからの信
号vrで吸収電流isを同期検波し、isとvrの移相差
Δとisの大きさinを測定する。このΔから偏極
方向を算出し、このinと、コレクタ5で集めたタ
ーゲツトからの2次電子電流i2と吸収電流isとの
和(=入射電流)との比〔in/(i2+is)〕からス
ピン偏極率を算出する。 Here, since the spin direction S is constant regardless of the direction of electron movement, when viewed from a coordinate system that is stationary with respect to the rotating electron orbit 1 (that is, assuming that the direction of incidence of the electron is fixed) , central axis 9
The electron spin direction S rotates in a plane parallel to the target surface (that is, around the central axis 9). Therefore, the absorbed current is to the target 6 becomes an alternating current signal that changes sinusoidally between + in and -in as shown in FIG. The signal processor 8 synchronously detects the absorbed current is with the signal v r from the generator, and measures the phase shift difference Δ between is and v r and the magnitude in of is . The polarization direction is calculated from this Δ, and the ratio of this i n to the sum of the secondary electron current i 2 from the target collected by the collector 5 and the absorption current is (=incident current) [i n /(i 2 + is)] to calculate the spin polarization rate.
つまり、シグナルプロセツサ8中においては次
式に従つて偏極方向およびスピン偏極率Pが求
められる。 That is, in the signal processor 8, the polarization direction and spin polarization rate P are determined according to the following equations.
=Δ
P=in/I0(i2+is)
ここでは偏向電極3の面法線からビームの回
転方向に測つた角度。Ipは第2図に与えられてい
るもので、ターゲツト6の表面状態のみに依存す
る定数である。ここでIpは前述したE0によつて影
響を受けるわけであるが、Epがターゲツトの表面
状態によつて影響されるほどにはIpは大きく影響
されない。 =Δ P=i n /I 0 (i 2 +is) Here, it is the angle measured from the normal to the surface of the deflection electrode 3 in the rotation direction of the beam. I p is given in FIG. 2 and is a constant that depends only on the surface condition of the target 6. Here, I p is affected by E 0 mentioned above, but I p is not affected as much as E p is affected by the surface condition of the target.
以上詳述したごとく、本発明によれば、スピン
偏極率の2次元面内成分の方向と大きさを、電子
線照射物体の表面状態とは殆ど無関係に検出でき
る。特に偏極方向は、表面状態の影響を全く受け
ずに、単に位相を測定するだけで容易に検出でき
る。また測定対象が交流信号であるために、ロツ
クイン方式を採用することによりノイズの影響を
受けずに安定に測定できる。
As detailed above, according to the present invention, the direction and magnitude of the two-dimensional in-plane component of spin polarization can be detected almost independently of the surface state of the object irradiated with an electron beam. In particular, the polarization direction can be easily detected simply by measuring the phase without being affected by the surface condition. Furthermore, since the object to be measured is an alternating current signal, by adopting the lock-in method, stable measurement is possible without being affected by noise.
第1図および第2図は、従来法によるスピン偏
極率の測定原理を説明するための模式図および曲
線図、第3図および第4図は、本発明による電子
スピン偏極率検出器の基本的な構成図およびその
説明用曲線図である。
1……被測定電子線、2……コリメータ、3,
3′……偏向電極、4,4′……リング状偏向電
極、5……2次電子コレクタ、6……多結晶金タ
ーゲツト、7……ジエネレータ、8……シグナル
プロセツサ。
FIGS. 1 and 2 are schematic diagrams and curve diagrams for explaining the principle of spin polarization measurement using the conventional method, and FIGS. 3 and 4 are diagrams of the electron spin polarization detector according to the present invention. FIG. 2 is a basic configuration diagram and an explanatory curve diagram thereof. 1...Electron beam to be measured, 2...Collimator, 3,
3'... Deflection electrode, 4,4'... Ring-shaped deflection electrode, 5... Secondary electron collector, 6... Polycrystalline gold target, 7... Generator, 8... Signal processor.
Claims (1)
記電子線をその中心軸に対して所定の角度傾ける
とともにその角度を保持して前記中心軸の廻りに
回転させる手段、前記回転させられた電子線を前
記中心軸上に配置されたターゲツトに照射するよ
うに向きを変える手段、ターゲツトに照射された
電子線によるターゲツトの吸収電流を検出する手
段、ターゲツトに照射された電子線によるターゲ
ツトからの2次電子電流を検出する手段、前記電
子線を回転させる手段に与える信号と前記吸収電
流を検出する手段の信号とから電子線の偏極方向
を計算し、前記2次電子電流を検出する手段の信
号と前記吸収電流を検出する手段の信号及び前記
ターゲツトについて事前に与えられる定数から電
子線の偏極率を計算する手段とよりなることを特
徴とする電子スピン偏極率検出器。1 means for supplying a collimated electron beam, means for tilting the electron beam at a predetermined angle with respect to its central axis and rotating it around the central axis while holding the angle; means for changing the direction so as to irradiate a target placed on the central axis; means for detecting current absorbed by the target due to the electron beam irradiated to the target; and secondary electrons from the target due to the electron beam irradiated to the target. a means for detecting a current, a signal from the means for detecting the secondary electron current by calculating the polarization direction of the electron beam from a signal given to the means for rotating the electron beam and a signal from the means for detecting the absorbed current; An electron spin polarization detector comprising means for calculating the polarization ratio of an electron beam from a signal of the absorption current detection means and a constant given in advance for the target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58123240A JPS6017846A (en) | 1983-07-08 | 1983-07-08 | Electron spin polarization detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58123240A JPS6017846A (en) | 1983-07-08 | 1983-07-08 | Electron spin polarization detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6017846A JPS6017846A (en) | 1985-01-29 |
| JPH0454336B2 true JPH0454336B2 (en) | 1992-08-31 |
Family
ID=14855666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58123240A Granted JPS6017846A (en) | 1983-07-08 | 1983-07-08 | Electron spin polarization detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6017846A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09257075A (en) * | 1996-03-25 | 1997-09-30 | Daihatsu Motor Co Ltd | Bracket for vibration control mount made of synthetic resin |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2196175B (en) * | 1986-10-03 | 1990-10-17 | Trialsite Ltd | Production of pulsed electron beams |
| JPH04206427A (en) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | Spin detector |
| JP3383842B2 (en) | 2000-04-28 | 2003-03-10 | 北海道大学長 | Scattering target holding mechanism and electron spin analyzer |
| JP3757263B2 (en) | 2000-05-02 | 2006-03-22 | 国立大学法人 北海道大学 | Electron spin analyzer |
-
1983
- 1983-07-08 JP JP58123240A patent/JPS6017846A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09257075A (en) * | 1996-03-25 | 1997-09-30 | Daihatsu Motor Co Ltd | Bracket for vibration control mount made of synthetic resin |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6017846A (en) | 1985-01-29 |
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