JPH0455535B2 - - Google Patents
Info
- Publication number
- JPH0455535B2 JPH0455535B2 JP61085416A JP8541686A JPH0455535B2 JP H0455535 B2 JPH0455535 B2 JP H0455535B2 JP 61085416 A JP61085416 A JP 61085416A JP 8541686 A JP8541686 A JP 8541686A JP H0455535 B2 JPH0455535 B2 JP H0455535B2
- Authority
- JP
- Japan
- Prior art keywords
- inner layer
- layer
- mounting
- semiconductor chip
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
- H10W72/07554—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting changes in dispositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
【発明の詳細な説明】
[技術分野]
本発明はピングリツドアレイ(PGA)とかリ
ードレスチツプキヤリア(LCC)等の半導体チ
ツプキヤリアの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for manufacturing semiconductor chip carriers such as pin grid arrays (PGA) and leadless chip carriers (LCC).
[背景技術]
従来より、プリント配線板をチツプキヤリアと
して半導体チツプが実装されている。この場合多
層プリント配線板にあつては、第3図に示すよう
に表面に内層回路が形成され、実装用凹部3形成
用の凹部3a乃至貫通孔3bが形成された複数枚
の内層用絶縁基板1からなる内層材4と実装用凹
部形成用の貫通孔3cを有する外層用絶縁基板5
を接着剤,接着シート又はローフロープリプレグ
などのボンデイングシート層8を介在させて多層
成形し、次いで孔13明け加工、スルーホールめ
つき及び外層エツチングなどを施して表面側に実
装用凹部3が形成された多層プリント配線板7′
が製造されるが、実装用凹部3にもめつき層が形
成されてしまい、このめつき層により汚染され
て、半導体チツプを実装するには、めつき層を除
去しなければならないという問題があつた。[Background Art] Conventionally, semiconductor chips have been mounted using printed wiring boards as chip carriers. In this case, in the case of a multilayer printed wiring board, as shown in FIG. 3, an inner layer circuit is formed on the surface of a plurality of inner layer insulating substrates in which recesses 3a to through holes 3b for forming mounting recesses 3 are formed. 1 and an outer layer insulating substrate 5 having a through hole 3c for forming a recess for mounting.
is multi-layer molded with a bonding sheet layer 8 such as adhesive, adhesive sheet or low flow prepreg interposed therebetween, and then holes 13 are drilled, through-hole plating and outer layer etching are performed to form mounting recesses 3 on the surface side. Multilayer printed wiring board 7'
However, a plating layer is also formed in the mounting recess 3, which causes contamination and the problem that the plating layer must be removed in order to mount the semiconductor chip. Ta.
このため、本発明者らは、第4図に示すように
表面に内層回路が形成され、複数枚の内層用絶縁
基板1をボンデイングシート層8を介在させて積
層して表面側に実装用凹部3を有する内層材4を
形成し、次いで外層用絶縁基板5を内層材4の表
面に積層し、この後孔13明け加工、スルーホー
ルめつき、外層形成し、次いで最外層の外層用絶
縁基板5の実装用凹部3に対応する箇所5aを切
削して実装用凹部3を露出させて形成した多層プ
リント配線板7″に半導体チツプを実装する方法
を開発したが、この方法では実装用凹部3がめつ
きにより汚染されることはないものの、外層用絶
縁基板5のドリルなどによる切削加工に際して内
層材4のワイヤーボンデイング部9を傷付けてし
まうことがあつた。 Therefore, as shown in FIG. 4, the present inventors have developed a method in which an inner layer circuit is formed on the surface, and a plurality of inner layer insulating substrates 1 are laminated with a bonding sheet layer 8 interposed therebetween, and a recess for mounting is formed on the surface side. 3, an insulating substrate 5 for the outer layer is laminated on the surface of the inner layer material 4, after which holes 13 are drilled, through holes are plated, an outer layer is formed, and then an insulating substrate for the outermost layer is formed. We have developed a method for mounting a semiconductor chip on a multilayer printed wiring board 7'' which is formed by cutting a portion 5a corresponding to the mounting recess 3 of No. 5 to expose the mounting recess 3. Although there was no contamination due to sticking, the wire bonding portion 9 of the inner layer material 4 was sometimes damaged when cutting the outer layer insulating substrate 5 with a drill or the like.
[発明の目的]
本発明は上記事情に鑑みて為されたものであ
り、その目的とするところは、最外層の回路パタ
ーンの形成に際して実装用凹部がめつきで汚染さ
れることがなく、又、内層材のワイヤーボンデイ
ング部が傷付くこともない半導体チツプキヤリア
の製造方法を提供することにある。[Object of the Invention] The present invention has been made in view of the above circumstances, and its purpose is to prevent the mounting recess from being contaminated by plating when forming the outermost layer circuit pattern, and To provide a method for manufacturing a semiconductor chip carrier in which a wire bonding part of an inner layer material is not damaged.
[発明の開示]
本発明の半導体チツプキヤリアの製造方法は、
内層回路が形成された内層用絶縁基板1を積層し
て表面側に半導体チツプ2の実装用凹部3を有す
る内層材4を形成し、次いで最外層となる外層用
絶縁基板5の内層材4の実装用凹部3に対応する
裏面側を切削して薄肉層6を形成し、この外層用
絶縁基板5を内層材4の表面に積層して多層成形
し、この後順次孔13明け加工、スルーホールめ
つき、外層形成を行なつて多層プリント配線板7
を形成し、次いで最外層の表面側から薄肉層6を
切削して除去し、露出した実装用凹部3に半導体
チツプ2を実装することを特徴とするものであ
り、この構成により上記目的を達成できたもので
ある。[Disclosure of the Invention] The method for manufacturing a semiconductor chip carrier of the present invention includes:
The inner layer insulating substrate 1 on which the inner layer circuit is formed is laminated to form an inner layer material 4 having a recess 3 for mounting the semiconductor chip 2 on the front side, and then the inner layer material 4 of the outer layer insulating substrate 5 which is the outermost layer is laminated. The back side corresponding to the mounting recess 3 is cut to form a thin layer 6, and this outer layer insulating substrate 5 is laminated on the surface of the inner layer material 4 to perform multilayer molding. After this, holes 13 are sequentially drilled and through holes are formed. After plating and forming the outer layer, the multilayer printed wiring board 7 is formed.
The thin layer 6 is then cut and removed from the surface side of the outermost layer, and the semiconductor chip 2 is mounted in the exposed mounting recess 3. With this configuration, the above object is achieved. It was made.
以下、本発明を添付の図面を参照して説明す
る。多層プリント配線板7は周知のマスラミネー
ト方式又はピンラミネート方式により製造され
る。この実施例は三層プリント配線板である。内
層用絶縁基板1は、銅箔などの金属箔を張つた紙
フエノール樹脂積層板、紙エポキシ樹脂積層板な
どの金属箔張り積層板に順次、孔明け、無電解め
つき、パターン形成、パターンめつき、レジスト
めつき、レジスト除去、エツチング、外形仕上
げ、シンボルマーク印刷といつた常法の工程でそ
の表面に内層回路が形成される。内層回路を形成
する前に、まず、二枚の内層用絶縁基板1a,1
bにそれぞれ実装用凹部形成用の凹部3a及び貫
通孔3bを機械的切削加工により形成する。次い
で、この二枚の内層用絶縁基板1a,1bを接着
材、接着シートあるいはローフロープリプレグの
ようなボンデイングシート層8を介して加熱加圧
して積層成形して表面側に半導体チツプ2の実装
用凹部3を有する内層材4を形成する。一方最外
層となる外層用絶縁基板5は銅箔プリプレグのよ
うなものであり、内層材4の実装用凹部3に対応
する裏面側を座ぐり等の機械的切削加工により切
削して薄肉層6を形成する。次いでこの外層用絶
縁基板5を内層材4の表面にボンデイングシート
層8を介して加熱加圧して多層形成する。この後
孔13明け加工、スルーホールめつきからなるス
ルーホール工程、次いで外層エツチング等の外層
形成工程により多層プリント配線板7を形成す
る。この後最外層の表面側から機械的切削加工に
より薄肉層6を除去して実装用凹部3を露出させ
る。この場合、薄肉層6を除去するだけで、又薄
肉層6とワイヤーボンデイング部9との間には間
隙14が形成されているので、ワイヤーボンデイ
ング部9を傷付けることはなく、簡単に実装用凹
部3を出すことができる。この実装用凹部3には
半導体チツプ2を搭載し、ワイヤ10によりボン
デイングして内層回路と電気的に接続し、エポキ
シ樹脂などにより樹脂封止したり、セラミツク製
のカバーを被着して絶縁処理を施し、パツケージ
としての実装を完了して実用に供する。尚、この
半導体チツプキヤリアAは、第2図に示すように
スルーホール11に端子ピン12を保持させるこ
とによりピングリツドアレイとして、又スルーホ
ール11を接続孔として機能させることによりリ
ードレスチツプキヤリアとして使用できるもので
ある。 The present invention will now be described with reference to the accompanying drawings. The multilayer printed wiring board 7 is manufactured by a well-known mass lamination method or pin lamination method. This example is a three-layer printed wiring board. The inner layer insulating substrate 1 is made by sequentially drilling holes, electroless plating, pattern formation, and patterning on a metal foil-covered laminate such as a paper phenolic resin laminate or a paper epoxy resin laminate covered with a metal foil such as copper foil. Inner layer circuits are formed on the surface using conventional processes such as plating, resist plating, resist removal, etching, external finishing, and symbol mark printing. Before forming the inner layer circuit, first, two inner layer insulating substrates 1a, 1
A recess 3a and a through hole 3b for forming a recess for mounting are respectively formed in b by mechanical cutting. Next, these two inner layer insulating substrates 1a and 1b are laminated by heating and pressurizing through an adhesive, an adhesive sheet, or a bonding sheet layer 8 such as low flow prepreg, and a semiconductor chip 2 is mounted on the front side. An inner layer material 4 having a recess 3 is formed. On the other hand, the outermost insulating substrate 5 is made of copper foil prepreg, and the back side corresponding to the mounting recess 3 of the inner layer material 4 is cut by a mechanical cutting process such as a counterbore to form a thin layer 6. form. Next, this outer layer insulating substrate 5 is heated and pressed on the surface of the inner layer material 4 via the bonding sheet layer 8 to form a multilayer structure. After this, the multilayer printed wiring board 7 is formed by a through-hole process consisting of drilling holes 13 and through-hole plating, and then an outer layer forming process such as outer layer etching. Thereafter, the thin layer 6 is removed by mechanical cutting from the surface side of the outermost layer to expose the mounting recess 3. In this case, since the thin layer 6 is simply removed and the gap 14 is formed between the thin layer 6 and the wire bonding part 9, the wire bonding part 9 will not be damaged and the recess for mounting can be easily formed. You can roll a 3. The semiconductor chip 2 is mounted in this mounting recess 3, electrically connected to the inner layer circuit by bonding with wires 10, and insulated by sealing with epoxy resin or the like or covering with a ceramic cover. We will complete the implementation as a package and put it into practical use. As shown in FIG. 2, this semiconductor chip carrier A can be used as a pin grid array by holding the terminal pins 12 in the through holes 11, and as a leadless chip carrier by making the through holes 11 function as connection holes. It can be used.
[発明の効果]
本発明にあつては、半導体チツプの実装用凹部
を有する内層材を形成し、内層材の表面にその実
装用凹部に対応する裏面側を切削して薄肉層を形
成した外層用絶縁基板を積層して多層成形し、こ
の後順次孔明け加工、スルーホールめつき、外層
形成を行なつて多層プリント配線板を形成するの
で、最外層の回路パターンの形成に際し、実装用
凹部が最外層の外層用絶縁基板により保護されて
めつきに汚染されることがなく、しかも最外層の
表面側から薄肉層を切削して除去し、露出した実
装用凹部に半導体チツプを実装するので、薄肉層
を切削することになり、又薄肉層とワイヤ−ボン
デイング部との間には間隙が形成されているの
で、内層材のワイヤボンデイング部を傷付けるこ
となく、簡単に実装用凹部を露出させることがで
き、内層材のワイヤ−ボンデイング部を傷付ける
ことがなく、半導体チツプと内層材の内層回路と
の電気的接続を確実なものにできる。[Effects of the Invention] In the present invention, an inner layer material having a recess for mounting a semiconductor chip is formed, and a thin layer is formed on the surface of the inner layer material by cutting the back side corresponding to the recess for mounting. The multilayer printed wiring board is formed by laminating insulating substrates for multilayer printing, and then sequentially drilling holes, plating through holes, and forming the outer layer. The semiconductor chip is protected by the outermost insulating substrate and is not contaminated by plating, and the thin layer is removed by cutting from the surface side of the outermost layer, and the semiconductor chip is mounted in the exposed mounting recess. Since the thin layer is cut and a gap is formed between the thin layer and the wire bonding part, the recess for mounting can be easily exposed without damaging the wire bonding part of the inner layer material. Therefore, the wire bonding portion of the inner layer material is not damaged, and the electrical connection between the semiconductor chip and the inner layer circuit of the inner layer material can be ensured.
第1図は本発明の一実施例の工程を示す断面
図、第2図は同上への半導体チツプの実装を示す
断面図、第3図は従来例を示す断面図、第4図は
本発明の完成過程で開発された方法を示す断面図
であつて、Aは半導体チツプキヤリア、1は内層
用絶縁基板、2は半導体チツプ、3は実装用凹
部、4は内層材、5は外層用絶縁基板、6は薄肉
層、7は多層プリント配線板、13は孔である。
FIG. 1 is a sectional view showing the process of an embodiment of the present invention, FIG. 2 is a sectional view showing mounting of a semiconductor chip on the same, FIG. 3 is a sectional view showing a conventional example, and FIG. 1 is a cross-sectional view showing a method developed in the process of completing a semiconductor chip carrier, 1 is an insulating substrate for an inner layer, 2 is a semiconductor chip, 3 is a recess for mounting, 4 is an inner layer material, and 5 is an insulating substrate for an outer layer. , 6 is a thin layer, 7 is a multilayer printed wiring board, and 13 is a hole.
Claims (1)
して表面側に半導体チツプの実装用凹部を有する
内層材を形成し、次いで最外層となる外層用絶縁
基板の内層材の実装用凹部に対応する裏面側を切
削して薄肉層を形成し、この外層用絶縁基板を内
層材の表面に積層して多層成形し、この後順次孔
明け加工、スルーホールめつき、外層形成を行な
つて多層プリント配線板を形成し、次いで最外層
の表面側から薄肉層を切削して除去し、露出した
実装用凹部に半導体チツプを実装することを特徴
とする半導体チツプキヤリアの製造方法。1 Laminate the inner layer insulating substrates on which inner layer circuits are formed to form an inner layer material having a recess for mounting a semiconductor chip on the front side, and then stack the inner layer material having a recess for mounting a semiconductor chip on the outermost layer, which corresponds to the mounting recess of the inner layer material of the outer layer insulating substrate. The back side of the material is cut to form a thin layer, and this insulating substrate for the outer layer is laminated on the surface of the inner layer material to form a multilayer. After this, hole drilling, through hole plating, and outer layer formation are performed sequentially to form a multilayer. A method for manufacturing a semiconductor chip carrier, which comprises forming a printed wiring board, then cutting and removing a thin layer from the surface side of the outermost layer, and mounting a semiconductor chip in the exposed mounting recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61085416A JPS62242341A (en) | 1986-04-14 | 1986-04-14 | Manufacture of semiconductor chip carrier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61085416A JPS62242341A (en) | 1986-04-14 | 1986-04-14 | Manufacture of semiconductor chip carrier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62242341A JPS62242341A (en) | 1987-10-22 |
| JPH0455535B2 true JPH0455535B2 (en) | 1992-09-03 |
Family
ID=13858200
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61085416A Granted JPS62242341A (en) | 1986-04-14 | 1986-04-14 | Manufacture of semiconductor chip carrier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62242341A (en) |
-
1986
- 1986-04-14 JP JP61085416A patent/JPS62242341A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62242341A (en) | 1987-10-22 |
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