JPH0456110B2 - - Google Patents
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- Publication number
- JPH0456110B2 JPH0456110B2 JP61199631A JP19963186A JPH0456110B2 JP H0456110 B2 JPH0456110 B2 JP H0456110B2 JP 61199631 A JP61199631 A JP 61199631A JP 19963186 A JP19963186 A JP 19963186A JP H0456110 B2 JPH0456110 B2 JP H0456110B2
- Authority
- JP
- Japan
- Prior art keywords
- composition
- film
- nitrided
- alloy film
- modulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
産業上の利用分野
本発明は磁気ヘツドに適した窒化磁性合金膜及
びその形成法に関するものである。
従来の技術
従来よりArガス中にN2ガスを混合したスパツ
タ法や、窒化物をターゲツトに用いたスパツタ法
等により窒素を含む磁性合金膜の作成が試みられ
て来た。これらのものにはFe、Co、Niとガラス
化元素B、Si、Al、P、C等より成る合金の窒
化膜(特開昭54−94428号公報、及び同60−15261
号公報)や、Feの窒化物の研究(ジヤーナル
オブ アプライド フイジツクス(J.Appl.
phys.)53(11)p8332(1982))がある。前者にお
いては、たとえばFe−B系を窒化したFe−B−
Nにおいては垂直磁気異方性が増加して、Fe−
B系合金の有する軟磁性がそこなわれ、抗磁力
Hcの大きな磁性膜になると同時に飽和磁化4πMs
が窒化により減少する事が知られている。又、後
者のFe−N合金膜においては4πMsは微量のNを
含む場合むしろ増加するがやはりHcは大きく軟
磁性を示さない事が知られており、むしろその硬
質磁性に着目し、記録媒体への応用研究が進めら
れている。これらに対し、特願昭61−54054号に
示されているように、謂ゆるメタル−メタル系非
晶質合金の窒化膜は比較的Hcが小さく、4πMsの
窒化による減少も少なく、むしろ増加する事が知
られている。
しかしながらこの窒化膜ではHcが十分小さく
ない為、上記特許出願に係る発明では、上記のメ
タル−メタル系非晶質合金の窒化層と非窒化層を
交互に重ねた多層構造とする事により極めて小さ
いHcの軟磁性合金膜を得ている。
ところがこのような多層膜は室温付近で使用す
る場合は問題ないが、300℃付近で熱処理を施す
と層間拡散によりその優れた軟磁性が損なわれて
しまう事がわかつた。
発明が解決しようとする問題点
本発明は上述の問題点を解決し、Hcが小さく
軟磁性を示しかつ特性が熱的に安定で、更に窒化
物特有の耐摩耗性と比較的高い電気抵抗を示す窒
化磁性合金膜を可能とするものである。
問題点を解決するための手段
本発明の窒化磁性合金膜は次式で表わされるも
のである。
Tx My Nz ……(1)
ただし、
TはCo、Fe、Ni、Mnのうち1種もし
くは2種以上の金属、
MはTi、Nb、Hf、Zr、Ta、W、Mo、
Crのうち1種もしくは2種以上の金属、
NはN(窒素)
であつて、x,y,zは原子パーセントを表わし
それぞれ
65x94 ……(2)
5y25 ……(3)
0.1z20 ……(4)
x+y+z=100 ……(5)
であるが合金の厚さ方向に対しx,y,zは一定
値をとらずその値が周期的に連続して変化する構
造を有する組成変調窒化合金である事をその特徴
とするものである。
作 用
組成変調構造を有することにより、拡散による
特性変化が生じ難く、熱的に安定であり、また、
Hcが小さくなる効果も得られる。更に、Nを含
むことにより、耐摩耗性と比較的高い電気抵抗を
得ることができる。
実施例
軟磁性を得るには
x94、5y、z20 ……(6)
である事が必要であり、十分な4πMsを得るには
65x、y25 ……(7)
であり、耐摩耗性の向上、比抵抗の増大、熱的安
定性の向上には少くとも
0.1z ……(8)
である事が必要な事が実験結果よりわかつた。(6)
〜(8)より(2)〜(4)が又当然の事ながら(5)式となる事
が必要である。
本発明の特徴は単なる窒化合金でもなく、又単
なる多層構造合金でもなく、熱的に安定で拡散が
生じにくいような構造に組成変調された窒化磁性
合金であり、又組成変調する事により単なる窒化
膜では得難い軟磁性を得ようとするものである。
従つて以下(1)式で本発明組成変調窒化合金を示す
場合には、それは平均組成を意味し、x,y,z
は厚さ方向に周期的に連続して変動しているもの
である。この組成変動の周期を組成変調波長λと
すれば、λが小さい程Hcの小さな軟磁性膜が得
られる事がわかつた。特にλ1000Åでこの効果
は大であつた。このような組成変調合金膜を形成
するには従来はArガス中にN2ガスを周期的に混
合してスパツタを行なう事により、おもにN(窒
素)元素のみを膜厚方向に組成変調したものであ
つたが、このような膜は熱処理によりNが拡散し
てその周期性が不明確になつてしまい熱的に不安
定であつた。しかるに本発明においては、(1)式に
示した構成元素のうちM(=Ti、Nb、Hf、Zr、
Ta、W……)が構成元素T(=Co、Ni、……)
よりもN(窒素)と結合し易い点に着目し、上記
のおもにN元素のみを組成変調した合金膜を適当
な温度で熱処理する事により膜厚方向にM元素と
N元素の極大とT元素の極小がほぼ一致するよう
な熱的に安定な組成変調構造を有する合金とする
事により、拡散による特性変化が生じにくく熱的
に安定で、かつ膜厚方向に組成変調構造を有する
為、単なる窒化膜では得られなかつた極めてHc
の小さい軟磁性合金膜を得るものである。更にN
を含んだこのような組成変調合金膜は、Nを含ま
ない非晶質合金膜に比べて、高温での特性劣化が
小さい事がわかつた。即ちNを含まない非晶質合
金は結晶化温度Tc以上で結晶化してその軟磁性
を失ないHc>10Oeとなる。非晶質合金のTcは
高々560〜570℃で4πMsの高いものほどこの値は
低くなる為、通常このような非晶質合金を用いた
磁気ヘツドを作製する場合、熱処理温度は500℃
以上とするのは困難である。一方本発明の組成変
調された窒化合金膜は600℃での熱処理後もHc<
5Oeであり極めて特性の熱安定性の良い事がわか
つた。組成変調されていない単なる窒化膜も安定
ではあるがHcが熱処理前後どちらの場合も比較
的大きく、磁気特性に関しては本発明の組成変調
窒化膜の方が優れている。なお本発明窒化磁性合
金膜は窒化物特有の耐摩耗性と、合金としては比
較的高い電気抵抗を有しており、上述の熱的に安
定な軟磁気特性を有する事により磁気ヘツドコア
等の応用に適するものである。
〔実施例 1〕
Co83Nb17(原子%)の組成のターゲツトを用
い、Arガス中に一定分圧比となるようにN2ガス
を周期的に混合してスパツタする事によりフエラ
イト基板上に窒化層と非窒化層が周期的に積層さ
れた構造の多層膜を形成した。なおN2ガス分圧
比は0.2%、5%、10%、20%、40%と変化させ
た。又窒化層と非窒化層の層厚はほぼ等しくし
て、1層の層厚が1000Å、250Å、125Åの3種類
のものを作成した。得られた膜の代表的なものと
してN2ガス分圧比5%、1層の層厚約250Åの窒
化層と非窒化層よりなる多層構造膜のオージエ分
光(AES)による膜の深さ方向の組成プロフア
イルを第2図aに示した。図より明らかなように
明確な窒化層と非窒化層より成る多層構造膜が得
られている事がわかる。次にこれらの膜を480℃
真空中で熱処理して、本発明の組成変調窒化膜と
した。代表例として上記第2図aの多層構造膜の
この熱処理後の膜の深さ方向のAESによる組成
プロフアイルを第1図aに示した。同図で注目す
べき点は、第2図aにおいては窒化層ではNbが
少なくCoが相対的に多く、逆に非窒化層ではNb
が多くCoの少ない組成プロフアイルであつたも
のが、この熱処理によりNが拡散して室化層と非
窒化層の明確な区別がなくなつたものの組成変調
されたプロフアイルを残し、NとNbの極大が一
致し逆にCoは両者の極大で極小を示し、第2図
aとは逆の傾向のプロフアイルとなつている事が
わかる。これは多層膜作成時に、N2混合ガス中
スパツタではArガス中のみのスパツタにくらべ
膜がNbの減少した組成になり易いが、NbとNは
CoとNよりも結合し易いので適当な温度で熱処
理する事により上述のような組成変調が生じたも
のと思われる。これらの合金膜との比較の為、
N2分圧比5%、10%、20%の単なる窒化膜もN2
混合ガス中でスパツタ法により作成した。以上作
成した多層構造膜、本発明組成変調窒化合金膜、
単なる窒化合金膜を340℃回転磁界中で熱処理し
て、この熱処理前後の特性の変化を調べた結果を
まとめて下表に示した。
INDUSTRIAL APPLICATION FIELD The present invention relates to a nitrided magnetic alloy film suitable for magnetic heads and a method for forming the same. BACKGROUND ART Conventionally, attempts have been made to create a magnetic alloy film containing nitrogen by a sputtering method using a mixture of N 2 gas in Ar gas, a sputtering method using a nitride as a target, and the like. These include nitride films of alloys consisting of Fe, Co, Ni and vitrifying elements B, Si, Al, P, C, etc.
), and research on Fe nitrides (Journal).
of Applied Physics (J.Appl.
phys.) 53 (11) p8332 (1982)). In the former case, for example, Fe-B- nitrided Fe-B system is used.
In N, the perpendicular magnetic anisotropy increases, and in Fe−
The soft magnetism of the B-based alloy is damaged, and the coercive force is reduced.
At the same time as becoming a magnetic film with a large Hc, the saturation magnetization is 4πMs
is known to decrease with nitriding. In addition, in the latter Fe-N alloy film, 4πMs actually increases when it contains a small amount of N, but it is also known that Hc is large and does not exhibit soft magnetism. Applied research is underway. On the other hand, as shown in Japanese Patent Application No. 61-54054, nitride films of so-called metal-metal amorphous alloys have a relatively small Hc, and 4πMs does not decrease much due to nitridation, but rather increases. things are known. However, since this nitride film does not have a sufficiently small Hc, the invention related to the above patent application uses a multilayer structure in which nitrided and non-nitrided layers of the metal-metal amorphous alloy are stacked alternately, thereby making it extremely small. A soft magnetic alloy film of Hc was obtained. However, it has been found that although such a multilayer film has no problems when used at around room temperature, when it is heat-treated at around 300°C, its excellent soft magnetic properties are lost due to interlayer diffusion. Problems to be Solved by the Invention The present invention solves the above-mentioned problems, exhibits a small Hc, exhibits soft magnetism, and has thermally stable characteristics, and also has the wear resistance and relatively high electrical resistance characteristic of nitrides. This enables the nitrided magnetic alloy film shown in FIG. Means for Solving the Problems The nitrided magnetic alloy film of the present invention is represented by the following formula. Tx My Nz ……(1) However, T is one or more metals among Co, Fe, Ni, and Mn, and M is Ti, Nb, Hf, Zr, Ta, W, Mo,
One or more metals among Cr, N is N (nitrogen), and x, y, and z represent atomic percent, respectively 65x94 ……(2) 5y25 ……(3) 0.1z20 ……( 4) x+y+z=100...(5) However, this is a composition-modulated nitrided alloy that has a structure in which x, y, and z do not take constant values in the thickness direction of the alloy, but their values change periodically and continuously. It is something that is characterized by something. Function: Due to its compositionally modulated structure, it is difficult to change properties due to diffusion, is thermally stable, and
The effect of reducing Hc can also be obtained. Furthermore, by including N, wear resistance and relatively high electrical resistance can be obtained. Example To obtain soft magnetism, it is necessary to have x94, 5y, z20...(6), and to obtain sufficient 4πMs, it is necessary to have 65x, y25...(7), improving wear resistance, The experimental results showed that at least 0.1z...(8) is necessary to increase resistivity and improve thermal stability. (6)
From ~(8), it is necessary that (2) to (4) also become equation (5). The feature of the present invention is that it is not a simple nitrided alloy or a multilayer structure alloy, but a nitrided magnetic alloy whose composition has been modulated to have a structure that is thermally stable and difficult to cause diffusion. The objective is to obtain soft magnetic properties that are difficult to obtain with films.
Therefore, when the composition-modified nitride alloy of the present invention is shown in the following formula (1), it means the average composition, and x, y, z
varies periodically and continuously in the thickness direction. It was found that if the period of this compositional fluctuation is taken as the compositional modulation wavelength λ, then the smaller λ is, the smaller the Hc can be obtained. This effect was particularly large at λ1000Å. Conventionally, to form such a compositionally modulated alloy film, the composition of only the N (nitrogen) element was modulated in the film thickness direction by periodically mixing N 2 gas in Ar gas and performing sputtering. However, such a film was thermally unstable because N diffused during heat treatment and its periodicity became unclear. However, in the present invention, M (=Ti, Nb, Hf, Zr,
Ta, W...) is a constituent element T (=Co, Ni,...)
Focusing on the point that N (nitrogen) is more likely to bond with N (nitrogen), by heat-treating the above alloy film in which only the N element is compositionally modulated at an appropriate temperature, the maximum of M element and N element and the T element are created in the film thickness direction. By creating an alloy with a thermally stable compositional modulation structure in which the minimum values of Extremely high Hc that could not be obtained with nitride film
The purpose is to obtain a soft magnetic alloy film with a small . Further N
It has been found that such a compositionally modulated alloy film containing N has less characteristic deterioration at high temperatures than an amorphous alloy film that does not contain N. That is, an amorphous alloy that does not contain N crystallizes above the crystallization temperature Tc and does not lose its soft magnetic properties, Hc>10 Oe. The Tc of an amorphous alloy is at most 560 to 570°C, and the higher the 4πMs, the lower this value, so when manufacturing a magnetic head using such an amorphous alloy, the heat treatment temperature is usually 500°C.
It is difficult to achieve the above. On the other hand, the composition-modulated nitride alloy film of the present invention has Hc<
It was found that it has an extremely high thermal stability of 5Oe. Although a simple nitride film without compositional modulation is stable, Hc is relatively large both before and after heat treatment, and the compositional modulated nitride film of the present invention is superior in terms of magnetic properties. The nitride magnetic alloy film of the present invention has wear resistance unique to nitrides and relatively high electrical resistance for an alloy, and has the above-mentioned thermally stable soft magnetic properties, making it suitable for applications such as magnetic head cores. It is suitable for [Example 1] Using a target with a composition of Co 83 Nb 17 (atomic %), nitriding was carried out on a ferrite substrate by sputtering and periodically mixing N 2 gas in Ar gas so as to have a constant partial pressure ratio. A multilayer film with a structure in which a layer and a non-nitrided layer were periodically laminated was formed. Note that the N 2 gas partial pressure ratio was changed to 0.2%, 5%, 10%, 20%, and 40%. Furthermore, the thicknesses of the nitrided layer and the non-nitrided layer were made almost equal, and three types of layers were created, each having a thickness of 1000 Å, 250 Å, and 125 Å. As a typical example of the obtained film, a multilayer structure film consisting of a nitrided layer and a non-nitrided layer with a N 2 gas partial pressure ratio of 5% and a layer thickness of about 250 Å was measured using Auger spectroscopy (AES) in the depth direction of the film. The composition profile is shown in Figure 2a. As is clear from the figure, a multilayer structure film consisting of a clear nitrided layer and a non-nitrided layer is obtained. These films were then heated to 480°C.
The composition was heat-treated in vacuum to obtain the composition-modulated nitride film of the present invention. As a representative example, FIG. 1a shows the AES composition profile of the multilayer structure film shown in FIG. 2a in the depth direction after this heat treatment. What should be noted in the figure is that in Figure 2a, the nitrided layer has less Nb and relatively more Co, while the non-nitrided layer has a relatively large amount of Nb.
However, due to this heat treatment, N diffused and there was no clear distinction between the nitrided layer and the non-nitrided layer, but a compositionally modulated profile remained, leaving a compositional profile with a large amount of Co and a small amount of Co. It can be seen that the maximums of the two coincide, and on the contrary, Co shows a minimum at the maximum of both, resulting in a profile with a tendency opposite to that shown in Figure 2a. This is because when creating a multilayer film, sputtering in a N2 mixed gas tends to result in a film with a reduced Nb composition compared to sputtering only in Ar gas, but Nb and N
Since Co and N bond more easily, it is thought that the above-mentioned compositional change was caused by heat treatment at an appropriate temperature. For comparison with these alloy films,
A simple nitride film with a N 2 partial pressure ratio of 5%, 10%, or 20% is also N 2
It was prepared by sputtering method in mixed gas. The multilayer structure film prepared above, the composition-modulated nitride alloy film of the present invention,
A simple nitride alloy film was heat-treated in a rotating magnetic field at 340°C, and the changes in properties before and after the heat treatment were investigated. The results are summarized in the table below.
実施例1と同じターゲツトを用いN2ガスを混
合しないで単にArガス中のみでスパツタして通
常のCo−Nb非晶質合金を作成した。この合金膜
と実施例1で作成した本発明合金膜b′,d′,g′,
j′,l′の硬度及び電気抵抗の測定を行なつた結果
をまとめて下表に示した。
Using the same target as in Example 1, a normal Co--Nb amorphous alloy was prepared by sputtering only in Ar gas without mixing N 2 gas. This alloy film and the invention alloy films b′, d′, g′ prepared in Example 1,
The hardness and electrical resistance measurements of j' and l' are summarized in the table below.
種々のターゲツトを用い実施例1と同様の方法
で、各種の組成変調窒化合金膜を作成し、その諸
特性を調べた結果をまとめて下表に示した。
Various compositionally modulated nitride alloy films were prepared using various targets in the same manner as in Example 1, and their properties were investigated. The results are summarized in the table below.
ターゲツトにCo82Nb12Ta2Zr4を用いて、実施
例1と同様の方法で、N元素平均含有量5%変調
波長500Åの組成変調窒化合金膜を作成した。比
較の為、同じターゲツトを用いてArガス中のみ
でスパツタする事により非晶質合金膜を作成し、
続いて同じターゲツトを用いてN2ガス5%混合
のArガス中でスパツタする事により窒化合金膜
を作成した。これらの試料を真空中で620℃30分
熱処理し、磁気特性の安定性の比較を行なつた。
第3図にこれら試料の熱処理前後における60Hzの
B−H曲線を示した。実験結果より明らかなよう
に図中aの窒化されていない非晶質合金膜はこの
熱処理により完全に結晶化して熱処理前の軟磁性
を失つており、又図中cの単なる窒化膜は熱処理
による特性劣化は少いがHcの大きいのが難点で
ある。これに対し図中bの本発明組成変調窒化合
金膜は熱処理後も軟磁性を維持しており極めて安
定性の良い事がわかる。
発明の効果
以上実施例により説明した通り、本発明の組成
変調窒化磁性合金膜は、従来の非晶質合金膜、多
層構造合金膜と比べて磁気特性の熱的安定性に優
れ、又単なる窒化膜では得難い優れた軟磁性を示
し、更に窒化合金特有の耐摩耗性と高い比抵抗を
あわせもつ新規な磁性合金膜であり、磁気ヘツド
等の応用に適したものである。
Using Co 82 Nb 12 Ta 2 Zr 4 as a target, a composition-modulated nitride alloy film with an average N element content of 5% and a modulation wavelength of 500 Å was prepared in the same manner as in Example 1. For comparison, an amorphous alloy film was created by sputtering only in Ar gas using the same target.
Subsequently, using the same target, a nitride alloy film was created by sputtering in Ar gas mixed with 5% N 2 gas. These samples were heat treated in vacuum at 620°C for 30 minutes, and the stability of their magnetic properties was compared.
FIG. 3 shows the 60Hz BH curves of these samples before and after heat treatment. As is clear from the experimental results, the non-nitrided amorphous alloy film (a) in the figure was completely crystallized by this heat treatment and lost its soft magnetic properties before the heat treatment, and the mere nitride film (c) in the figure was completely crystallized by the heat treatment. The deterioration of characteristics is small, but the drawback is that Hc is large. In contrast, it can be seen that the composition-modulated nitride alloy film of the present invention shown in b in the figure maintains its soft magnetic properties even after heat treatment, and has extremely good stability. Effects of the Invention As explained above with reference to Examples, the composition-modulated nitrided magnetic alloy film of the present invention has excellent thermal stability of magnetic properties compared to conventional amorphous alloy films and multilayer structure alloy films, and also has simple nitrided magnetic alloy films. This is a new magnetic alloy film that exhibits excellent soft magnetism that is difficult to obtain with films, and also has wear resistance and high specific resistance unique to nitride alloys, making it suitable for applications such as magnetic heads.
第1図は、本発明の組成変調窒化合金膜の
AESによる膜の深さ方向の組成プロフアイルを
示すグラフ、第2図は多層構造膜の作成時と340
℃熱処理後の膜の深さ方向のAESによる組成プ
ロフアイルを示すグラフ、第3図は本発明組成変
調窒化合金膜、非晶質合金膜、窒化合金膜の作成
時の60HzにおけるB−H曲線と620℃の熱処理後
のB−H曲線を示すグラフである。
Figure 1 shows the composition-modulated nitride alloy film of the present invention.
A graph showing the composition profile in the depth direction of the film by AES.
A graph showing the composition profile by AES in the depth direction of the film after °C heat treatment. Figure 3 is the B-H curve at 60Hz when creating the composition-modulated nitride alloy film, amorphous alloy film, and nitride alloy film of the present invention. It is a graph showing the BH curve after heat treatment at 620°C.
Claims (1)
Nのそれぞれの組成が膜厚方向において周期的に
連続して変調されていることを特徴とする窒化磁
性合金膜。 ただし、TはCo、Fe、Ni、Mnよりなる群か
ら選ばれた少なくとも1種以上の金属、MはTi、
Nb、Hf、Zr、Ta、W、Mo,Crよりなる群から
選ばれた少なくとも1種以上の金属、NはN(窒
素)であつて、x,y,zは原子パーセントを表
わし、それぞれ 65x94 5y25 0.1z20 x+y+z=100 である。 2 膜厚方向の構成元素MとNの組成変調の極大
が構成元素Tの組成変調の極小となるように組成
変調がされていることを特徴とする特許請求の範
囲第1項記載の窒化磁性合金膜。 3 膜厚方向の組成変調波長もしくは周期が1000
〓以下であることを特徴とする特許請求の範囲第
1項または第2項記載の窒化磁性合金膜。 4 Tx′My′で示される組成よりなる合金ターゲ
ツトを用い、Arガス中にN2ガスを周期的に混合
してスパツターすることにより窒化層と非窒化層
よりなる多層膜を形成した後、前記多層膜を熱処
理することによりTxMyNzで示される組成より
なる膜厚方向に組成が変調された窒化磁性合金膜
を得ることを特徴とする窒化磁性合金膜の形成
法。 ただし、TはCo、Fe、Ni、Mnよりなる群よ
り選ばれた少なくとも1種以上の金属、MはTi、
Nb、Hf、Zr、Ta、W、Mo,Crよりなる群から
選ばれた少なくとも1種以上の金属、NはN(窒
素)であつて、x,y,zおよびx′,y′は原子パ
ーセントを表わし、それぞれ 65x94、5y25、 0.1z20、x+y+z=100、 75x′94、6y′25、 x′+y′=100 である。 5 組成変調周期が1000〓以下となるようにN2
ガスの混合周期を設定したことを特徴とする特許
請求の範囲第4項記載の窒化磁性合金膜の形成
法。[Claims] 1 Consisting of the composition TxMyNz, and T, M,
A nitrided magnetic alloy film characterized in that each composition of N is periodically and continuously modulated in the film thickness direction. However, T is at least one metal selected from the group consisting of Co, Fe, Ni, and Mn; M is Ti;
At least one metal selected from the group consisting of Nb, Hf, Zr, Ta, W, Mo, and Cr, where N is N (nitrogen), and x, y, and z represent atomic percent, each 65x94 5y25 0.1z20 x+y+z=100. 2. The nitride magnetism according to claim 1, wherein the composition is modulated such that the maximum of the compositional modulation of the constituent elements M and N in the film thickness direction becomes the minimum of the compositional modulation of the constituent element T. Alloy membrane. 3 Composition modulation wavelength or period in the film thickness direction is 1000
The nitrided magnetic alloy film according to claim 1 or 2, characterized in that: 4 Using an alloy target having the composition shown by Tx'My', a multilayer film consisting of a nitrided layer and a non-nitrided layer was formed by periodically mixing N 2 gas in Ar gas and sputtering. 1. A method for forming a nitrided magnetic alloy film, characterized in that a nitrided magnetic alloy film having a composition represented by TxMyNz and whose composition is modulated in the film thickness direction is obtained by heat-treating a multilayer film. However, T is at least one metal selected from the group consisting of Co, Fe, Ni, and Mn; M is Ti;
At least one metal selected from the group consisting of Nb, Hf, Zr, Ta, W, Mo, and Cr, N is N (nitrogen), and x, y, z and x', y' are atoms They represent percentages and are respectively 65x94, 5y25, 0.1z20, x+y+z=100, 75x'94, 6y'25, x'+y'=100. 5 N2 so that the composition modulation period is 1000〓 or less
5. The method of forming a nitrided magnetic alloy film according to claim 4, wherein a gas mixing period is set.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199631A JPS6357758A (en) | 1986-08-26 | 1986-08-26 | Nitriding magnetic alloy film |
| DE19873707522 DE3707522A1 (en) | 1986-03-12 | 1987-03-09 | MAGNETIC NITRIDE FILM |
| US07/024,141 US4836865A (en) | 1986-03-12 | 1987-03-10 | Magnetic nitride film |
| US07/445,105 US5049209A (en) | 1986-03-12 | 1989-12-07 | Magnetic nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61199631A JPS6357758A (en) | 1986-08-26 | 1986-08-26 | Nitriding magnetic alloy film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6357758A JPS6357758A (en) | 1988-03-12 |
| JPH0456110B2 true JPH0456110B2 (en) | 1992-09-07 |
Family
ID=16411060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61199631A Granted JPS6357758A (en) | 1986-03-12 | 1986-08-26 | Nitriding magnetic alloy film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6357758A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0744123B2 (en) * | 1989-02-08 | 1995-05-15 | 富士写真フイルム株式会社 | Method for manufacturing soft magnetic thin film |
| JP2784105B2 (en) * | 1990-07-27 | 1998-08-06 | 富士写真フイルム株式会社 | Soft magnetic thin film |
| JPH0744108B2 (en) * | 1989-01-26 | 1995-05-15 | 富士写真フイルム株式会社 | Soft magnetic thin film |
| JPH0760767B2 (en) * | 1989-09-25 | 1995-06-28 | ティーディーケイ株式会社 | Soft magnetic thin film and magnetic head |
| JPH03263306A (en) * | 1990-02-02 | 1991-11-22 | Nec Corp | Magnetic film and magnetic head |
| US5589221A (en) * | 1994-05-16 | 1996-12-31 | Matsushita Electric Industrial Co., Ltd. | Magnetic thin film, and method of manufacturing the same, and magnetic head |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60132305A (en) * | 1983-12-21 | 1985-07-15 | Hitachi Ltd | Iron-nitrogen based laminated magnetic film and magnetic head using the same |
-
1986
- 1986-08-26 JP JP61199631A patent/JPS6357758A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6357758A (en) | 1988-03-12 |
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