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JPH0817129B2 - Magnetic alloy film and manufacturing method thereof - Google Patents
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JPH0817129B2 - Magnetic alloy film and manufacturing method thereof - Google Patents

Magnetic alloy film and manufacturing method thereof

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Publication number
JPH0817129B2
JPH0817129B2 JP63042676A JP4267688A JPH0817129B2 JP H0817129 B2 JPH0817129 B2 JP H0817129B2 JP 63042676 A JP63042676 A JP 63042676A JP 4267688 A JP4267688 A JP 4267688A JP H0817129 B2 JPH0817129 B2 JP H0817129B2
Authority
JP
Japan
Prior art keywords
film
composition
nitride
nitride film
magnetic alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63042676A
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Japanese (ja)
Other versions
JPS6432607A (en
Inventor
浩一 小佐野
博 ▲榊▼間
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Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
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Filing date
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Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP63042676A priority Critical patent/JPH0817129B2/en
Publication of JPS6432607A publication Critical patent/JPS6432607A/en
Publication of JPH0817129B2 publication Critical patent/JPH0817129B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、磁気ヘッド用等の軟磁性材料を構成する磁
性合金膜とその製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic alloy film that constitutes a soft magnetic material for a magnetic head or the like, and a manufacturing method thereof.

従来の技術 従来、磁気ヘッド材料としては、Fe−Si−Alを主成分
とするセンダスト合金や、Co−Nb−Zr等のアモルファス
合金、あるいは高周波損失の少ないフェライト材料等が
用いられている。しかし、近年になって情報の高密度化
に伴い記録媒体も、従来に比べて高抗磁力を持つものに
移行しつつあり、より高い飽和磁化、4πMs、を持つ軟
磁性材料が要求されるようになって来ている。一方、磁
気ヘッド用磁性材料としては、高飽和磁化に加え、良好
な耐蝕性、及び耐摩耗性も同時に要求される。フェライ
トは、耐蝕性,耐摩耗性共に優れているが、4πMsは5
〜6000Gであって、充分ではない。アモルファス合金
は、磁気特性は優れているものの耐熱性に劣り、高温で
結晶化して、特性が劣化するため、磁気ヘッドギャップ
接着工程に耐え得るものとしては、実用上、4πMsが高
高10000G程度のものしか得られていない。センダスト合
金は、4πMsが12000G程度あるものの、耐蝕性に劣るた
め、Cr等を加える必要があり実用上やはり10000G以上で
は使用出来ず、また耐摩耗性にも劣っている。センダス
ト合金,アモルファス合金とも、電気抵抗が小さいため
高周波化に伴って、表皮深さがトラック幅よりも小さく
なりつつあり層間絶縁層を入れる対策が取られている
が、スペーシング損失の点からは好ましくない。
2. Description of the Related Art Conventionally, as a magnetic head material, a sendust alloy containing Fe-Si-Al as a main component, an amorphous alloy such as Co-Nb-Zr, or a ferrite material with low high frequency loss is used. However, with the recent increase in information density, recording media are also shifting to those having higher coercive force than before, and soft magnetic materials with higher saturation magnetization, 4πMs, are required. Is becoming. On the other hand, as a magnetic material for a magnetic head, in addition to high saturation magnetization, good corrosion resistance and wear resistance are required at the same time. Ferrite has excellent corrosion resistance and wear resistance, but 4πMs is 5
~ 6000G, not enough. Amorphous alloys have excellent magnetic characteristics, but are poor in heat resistance, and crystallize at high temperatures to deteriorate the characteristics. Therefore, as a material that can withstand the magnetic head gap bonding process, 4πMs is as high as 10,000G. Only the things have been obtained. Although the sendust alloy has a 4πMs value of about 12000G, it has poor corrosion resistance, so it is necessary to add Cr and the like, and therefore it cannot be practically used at 10000G or more, and also has poor wear resistance. Since both the Sendust alloy and the amorphous alloy have small electric resistance, the skin depth is becoming smaller than the track width along with the increase in frequency, and measures are taken to insert an interlayer insulating layer, but from the standpoint of spacing loss. Not preferable.

発明が解決しようとする課題 上述のように、高飽和磁化を有する金属材料は、耐蝕
性もしくは耐摩耗性に劣っており、また耐蝕性,耐摩耗
性に優れた酸化物材料は、飽和磁化が充分ではない。本
発明は、要求されつつある高飽和磁化を有し、かつ耐蝕
性,耐摩耗性に優れ、電気抵抗の高い磁気ヘッド用軟磁
性材料として使用可能な合金膜を実現することを目的と
する。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention As described above, a metal material having a high saturation magnetization is inferior in corrosion resistance or wear resistance, and an oxide material excellent in corrosion resistance and wear resistance has a saturation magnetization. Not enough. It is an object of the present invention to realize an alloy film which has a high saturation magnetization which is required and which is excellent in corrosion resistance and wear resistance and which can be used as a soft magnetic material for a magnetic head having a high electric resistance.

課題を解決するための手段 本発明による磁性合金膜は、膜全体の平均組成がT
XNで表わされる磁性合金膜であって、非窒化膜と
窒化膜を交互に積層した多層膜において、窒化膜中のN
を非窒化膜中に層間拡散することにより、膜の厚さ方向
に少なくともNが組成変調されているものである。また
本発明による磁性合金膜の製造方法は、TaXbNcなる組成
を有する窒化膜とTa′Xb′なる組成を有する非窒化膜を
交互に積層した多層膜をスパッタ法を用いて形成する工
程と、多層膜を加熱して非窒化膜中にNを拡散させ、膜
の厚さ方向に少なくともNを組成変調する熱処理工程と
からなる。ただしTはFe,Ca,Niより成る群より選ばれた
1種もしくは2種以上の元素、XはSi,Ge,Gaより成る群
より選ばれた1種もしくは2種以上の元素、Nは窒素で
あって、原子組成%で である。
Means for Solving the Problems The magnetic alloy film according to the present invention has an average composition of T
A magnetic alloy film represented by XN, wherein N in the nitride film is a multilayer film in which a non-nitride film and a nitride film are alternately laminated.
Is inter-layer diffused into the non-nitride film, whereby at least N is composition-modulated in the film thickness direction. The method for producing a magnetic alloy film according to the present invention uses a sputtering method to form a multilayer film in which a nitride film having a composition of T a X b N c and a non-nitride film having a composition of T a ′ X b ′ are alternately laminated. And a heat treatment step of heating the multilayer film to diffuse N into the non-nitride film and compositionally modulating at least N in the film thickness direction. However, T is one or more elements selected from the group consisting of Fe, Ca, Ni, X is one or more elements selected from the group consisting of Si, Ge, Ga, and N is nitrogen. And the atomic composition% Is.

作 用 充分高い飽和磁化を有し、かつ優れた軟磁気特性を有
する磁気ヘッド用軟磁性合金を窒化すると、耐蝕性及び
耐摩耗性が向上するものの、優れた軟磁気特性は損わ
れ、高温で熱処理しても、劣化した磁気特性は容易には
回復されないことが実験からわかった。この窒化磁性合
金膜と、非窒化磁性合金膜とを多層構造にすると、軟磁
気特性が損われることなく、耐摩耗性に優れた磁気ヘッ
ド用材料が可能となる。この多層膜に熱処理を施すと、
層間拡散によって、熱処理前に非窒化膜であった部分に
も窒素が入り込み、少くとも窒素が組成変調された組成
変調窒化膜になる。得られた組成変調窒化膜は、最初か
ら一様に窒素が分布している単層の窒化合金膜とは異な
り、熱処理後も、軟磁気特性が劣化することなく、しか
も耐蝕性,耐摩耗性に優れている。また窒化されると、
電気抵抗が上がり表皮深さが増大するので、記録の高密
度化に伴った高周波化に対して、より適した材料を得る
ことが出来る。
When nitriding a soft magnetic alloy for a magnetic head that has sufficiently high saturation magnetization and excellent soft magnetic properties, corrosion resistance and wear resistance are improved, but the excellent soft magnetic properties are impaired and It was found from experiments that the deteriorated magnetic properties cannot be easily recovered even by heat treatment. When the nitrided magnetic alloy film and the non-nitrided magnetic alloy film have a multilayer structure, a magnetic head material having excellent wear resistance can be obtained without deteriorating the soft magnetic characteristics. When heat treatment is applied to this multilayer film,
Due to the inter-layer diffusion, nitrogen also penetrates into the portion that was the non-nitride film before the heat treatment, and becomes a composition-modulated nitride film in which the composition of nitrogen is at least modulated. Unlike the single-layer nitride alloy film in which nitrogen is uniformly distributed from the beginning, the obtained composition-modulated nitride film does not deteriorate in soft magnetic properties even after heat treatment, and has corrosion resistance and wear resistance. Is excellent. When it is nitrided again,
Since the electrical resistance is increased and the skin depth is increased, a material more suitable for high frequency recording accompanying higher recording density can be obtained.

実施例 本発明で積層する窒化膜は、Ta Xb Ncなる組成を有す
る。ただし、TはFe,Co,Niよりなる群より選ばれた1種
もしくは2種以上の元素、XはSi,Ge,Gaよりなる群より
選ばれた1種もしくは2種以上の元素、Nは窒素であ
る。充分な飽和磁化,4πMs,を得るためには、原子%で a78,b28,c20 である必要があり、充分な耐蝕性,耐摩耗性を得るため
には、 a98,c1 を充たす必要があり、さらに優れた軟磁性を得るために
は、少くとも b2 である必要があることが、実験よりわかった。
Example The nitride film laminated in the present invention has a composition of Ta Xb Nc. However, T is one or more elements selected from the group consisting of Fe, Co and Ni, X is one or more elements selected from the group consisting of Si, Ge and Ga, and N is It is nitrogen. In order to obtain sufficient saturation magnetization, 4πMs, it is necessary to have a78, b28, c20 in atomic%, and to obtain sufficient corrosion resistance and wear resistance, it is necessary to fill a98, c1. It has been found from experiments that at least b2 is required to obtain further excellent soft magnetism.

本発明における窒化磁性合金膜の組成は、上記のもの
であるが、単層膜の場合は、仮に上記の組成範囲内にあ
っても、良好な軟磁気特性を示さないため、厚さtの窒
化合金膜と厚さt′の非窒化合金膜とを交互に積層した
構造にする必要がある。第1図aに、膜中の元素量の深
さ方向に対する依存性の一例を示した。こうして得られ
た多層構造膜の耐摩耗性は、窒化膜の部分で高く、非窒
化膜の部分で低くなり、偏摩耗を起こす恐れがあるの
で、それぞれの膜厚が、tt′/2であることが望まし
い。熱処理を施した後の多層膜中の元素量の、深さ方向
の依存性の一例を第1図bに示した。窒素は非窒化膜の
拡散し周期がλ=t+t′の組成変調膜が得られる。熱
処理後は窒素が膜全体に含有されるので、耐蝕性,耐摩
耗性共に膜の全ての部分で向上した磁性材料が得られ
る。このことは、偏摩耗を防ぐ意味でも好ましい。この
際、成分元素中のT及びXの窒化物の出来やすさ(生成
自由エネルギー)、及び出来た窒化物の動きやすさによ
って拡散後の組成変調のパターンは、多様なものになり
得る。従って、第1図aの多層膜を熱処理した後の組成
変調のパターンは、T及びXの種類によって異り、必ず
しも第2図bのように一意的に定まるものではない。得
られた組成変調膜の変調の周期入が大き過ぎると、多層
構造膜中の厚さtの窒化膜の性質が単層膜の性質に近づ
き、熱処理後も良好な軟磁性が得られないため、λ20
00Åにする必要がある。以下具体的な実施例について述
べることとする。
The composition of the nitriding magnetic alloy film in the present invention is as described above. However, in the case of a single-layer film, even if it is within the above composition range, it does not exhibit good soft magnetic characteristics, so that the thickness t It is necessary to have a structure in which a nitrided alloy film and a non-nitrided alloy film having a thickness t ′ are alternately laminated. FIG. 1a shows an example of the dependence of the amount of elements in the film on the depth direction. The wear resistance of the multi-layer structure film thus obtained is high in the nitride film portion and low in the non-nitride film portion, and uneven wear may occur. Therefore, the thickness of each film is tt '/ 2. Is desirable. An example of the dependency of the amount of elements in the multilayer film after heat treatment in the depth direction is shown in FIG. 1b. Nitrogen diffuses in the non-nitride film to obtain a composition modulation film having a period of λ = t + t '. Since nitrogen is contained in the entire film after the heat treatment, a magnetic material having improved corrosion resistance and wear resistance in all parts of the film can be obtained. This is also preferable in terms of preventing uneven wear. At this time, the pattern of compositional modulation after diffusion may be various depending on the easiness of formation of the nitrides of T and X in the constituent elements (free energy of formation) and the easiness of movement of the formed nitride. Therefore, the pattern of composition modulation after heat treatment of the multilayer film of FIG. 1a differs depending on the types of T and X, and is not necessarily uniquely determined as shown in FIG. 2b. If the periodicity of modulation of the obtained composition-modulated film is too large, the properties of the nitride film with the thickness t in the multilayer structure film become close to those of the single-layer film, and good soft magnetism cannot be obtained even after the heat treatment. , Λ20
Must be 00Å. Specific examples will be described below.

FexSiy(x+y=100,4y24原子%)なる組成の
ターゲットを用い、rfスパッタ装置により、Arガス圧を
1.1×10-2Torrに固定し、窒素ガス分圧が0〜50%の雰
囲気中において、投入電力350Wで膜を形成した。第2図
に、Fe80Si20(原子%)なる組成のターゲットを用いて
得られた膜の飽和磁化,4πMs、の窒素濃度依存性を示し
た。得られた非窒化膜の組成はFe82Si18(原子%)であ
る。多層膜の場合の4πMsは、膜全体の平均組成によっ
てほぼ決まる。TaXbNc中のTまたはXの種類によって
は、4πMsがある範囲内で窒素濃度に依らないか、また
は増加する場合がある。
Using a target having a composition of Fe x Si y (x + y = 100,4y24 atom%), Ar gas pressure was controlled by an rf sputtering device.
The film was formed at a fixed power of 1.1 × 10 -2 Torr and an input power of 350 W in an atmosphere having a nitrogen gas partial pressure of 0 to 50%. FIG. 2 shows the nitrogen concentration dependence of the saturation magnetization, 4πMs, of the film obtained by using the target having the composition of Fe 80 Si 20 (atomic%). The composition of the obtained non-nitride film is Fe 82 Si 18 (atomic%). In the case of a multilayer film, 4πMs is almost determined by the average composition of the entire film. Depending on the type of T or X in TaXbNc, there is a case where 4πMs does not depend on the nitrogen concentration or increases within a certain range.

しかしながら、窒素が20原子%を越えると、いずれの
場合も、4πMsは減少し、また、熱処理後も良好な軟磁
性を得ることが難しくなるのでC20原子%である必要
がある。耐蝕試験はスパッタ膜を純水に浸し、室温で24
時間放置した後の錆の発生状況によって行った。また電
気抵抗は、4端子法によって測定した。表1に窒素濃度
を変化させた場合の耐蝕性及び電気抵抗の変化を示し
た。耐蝕試験の結果については、×(錆の発生のあった
もの)、△(錆の発生が極わずかだったもの)、○(錆
の発生のなかったもの)で表した。組成変調窒化膜の耐
蝕性は平均組成でほぼ決まる。表1においては、単層膜
についてはその組成、組成変調窒化膜については、その
平均組成を示したものである。窒化によって、電気抵抗
が上がるが、信号の高周波化に伴って、表皮深さが数μ
m程度になる金属材料に対しては、現在層間絶縁膜を挿
入する対策が取られているが、スペーシング損失を少く
するためにも、電気抵抗を上げ表皮深さを増大させるこ
とが望ましい。
However, if the nitrogen content exceeds 20 atomic%, in all cases, 4πMs decreases, and it becomes difficult to obtain good soft magnetism even after the heat treatment, so C20 atomic% is necessary. The corrosion resistance test is performed by immersing the sputtered film in pure water for 24 hours at room temperature.
It was carried out depending on the rust occurrence after being left for a time. The electrical resistance was measured by the 4-terminal method. Table 1 shows the changes in corrosion resistance and electric resistance when the nitrogen concentration was changed. The results of the corrosion resistance test were represented by x (those with rust), Δ (those with little rust), and ◯ (no rust). The corrosion resistance of the composition-modulated nitride film is almost determined by the average composition. Table 1 shows the composition of the single-layer film and the average composition of the composition-modulated nitride film. Electric resistance increases due to nitriding, but the skin depth increases to several μs as the frequency of signals increases.
For metal materials having a thickness of about m, measures are currently taken to insert an interlayer insulating film, but it is desirable to increase the electric resistance and increase the skin depth in order to reduce spacing loss.

当然のことながら、耐蝕性はT,Xの種類及びa,bに依存
するが、錆の発生がおさえられる効果が認められるため
には、少くともC1%である必要があり、Nの増加と
共に、耐蝕性は向上することがわかった。第3図に、C
=0%のFe82Si18膜のT=510℃で30分間の磁界中熱処
理前(a),及び熱処理後(b),の60HzにおけるB−
Hカーブを示した。第4図には、同様の熱処理前
(a),及び熱処理後(b)の窒化単層膜の、第5図に
は、t=t′=200Åの多層膜(a),及び熱処理後の
組成変調膜(b),のB−Hカーブをそれぞれ示した。
ただし、窒化単相膜、及び多層膜中の窒化膜の部分は、
窒素が約12原子%である。表2に、上記の組成変調窒化
膜,窒化単層膜,非窒化膜の飽和磁化(4πMs),耐蝕
試験の結果及びヌーブ硬度をまとめた。飽和磁化は、振
動磁力計で測定したものである。
Naturally, the corrosion resistance depends on the types of T and X and a and b, but in order to recognize the effect of suppressing the formation of rust, it must be at least C1%, and as N increases. It was found that the corrosion resistance was improved. In Figure 3, C
= 0% Fe 82 Si 18 film at T = 510 ° C. in a magnetic field for 30 minutes before (a) and after (b) heat treatment at 60 Hz B−
The H curve is shown. FIG. 4 shows a nitride monolayer film before (a) and after (b) similar heat treatment, and in FIG. 5, a multilayer film (a) at t = t ′ = 200Å and after heat treatment. BH curves of the composition modulation film (b) are shown respectively.
However, the nitride single-phase film and the nitride film portion in the multilayer film are
Nitrogen is about 12 atom%. Table 2 summarizes the saturation magnetization (4πMs) of the composition-modulated nitride film, the nitride single-layer film, and the non-nitride film, the results of the corrosion resistance test, and the Knube hardness. The saturation magnetization is measured by an oscillating magnetometer.

第6図に、組成変調窒化膜のT=510℃における30分
間の磁界中熱処理後の保磁力Hcのλ(組成変調波長)依
存性を示した。第6図からわかるように、軟磁気特性
は、組成変調膜が最もよい。この図に示した窒化変調膜
のN含有量は6原子%であって、窒化単層膜中の1/2で
あるが、Nが6原子%の窒化単素膜を熱処理しても、良
好な軟磁気特性は得られないので、組成変調構造とする
ことが必要である。ただし、熱処理温度が高過ぎるか、
あるいは処理時間が長過ぎると、組成によってはHcが再
び増大する場合があるので、適当な温度及び処理時間を
選ぶ必要がある。単層の窒化膜と組成変調の窒化膜で
は、同組成であっても硬度は必ずしも同じではないが、
組成変調波長λが同じであるような窒化膜,単層膜、い
ずれの場合も、Nの増大と共に硬度は増大する。しかし
ながら、上述したように、過度の窒素量は飽和磁化を減
少させるので、20原子%以下におさえることが望まし
い。窒化単層膜の保威力は非窒化膜に比べて著しく増大
し、第4図bからわかるように熱処理後も良好な軟磁気
特性が得られないのに対し、第6図に示したように、組
成変調膜については、組成変調波長λが2000Å以下にす
ると、保磁力の減少が顕著になる。
FIG. 6 shows the λ (composition modulation wavelength) dependence of the coercive force Hc of the composition-modulated nitride film after heat treatment in a magnetic field at T = 510 ° C. for 30 minutes. As can be seen from FIG. 6, the composition modulation film has the best soft magnetic characteristics. The N content of the nitride modulation film shown in this figure is 6 atom%, which is 1/2 of that of the nitride monolayer film, but it is satisfactory even if the N nitride film with 6 atom% N is heat-treated. Since it is not possible to obtain excellent soft magnetic properties, it is necessary to have a composition-modulated structure. However, if the heat treatment temperature is too high,
Alternatively, if the treatment time is too long, Hc may increase again depending on the composition, so it is necessary to select an appropriate temperature and treatment time. The hardness of the single-layer nitride film and the composition-modulated nitride film are not necessarily the same even if they have the same composition,
In both the nitride film and the single layer film having the same composition modulation wavelength λ, the hardness increases as N increases. However, as described above, an excessive amount of nitrogen reduces the saturation magnetization, so it is desirable to keep it to 20 atomic% or less. The protective power of the nitride single-layer film is remarkably increased as compared with the non-nitride film, and as can be seen from FIG. 4b, good soft magnetic characteristics cannot be obtained even after the heat treatment, whereas as shown in FIG. As for the composition modulation film, when the composition modulation wavelength λ is 2000 Å or less, the coercive force is significantly reduced.

上述の窒化による耐蝕性,耐摩耗性の向上はFe−Si合
金のみでなく、Fe−Co−Si合金、Fe−Si−Ga合金、Fe−
Ge−Ga合金についても同様に見られ、また、良好な軟磁
気特性を得るための多層化についても同様の効果が得ら
れることがわかった。表3にこれらの合金の単層膜、及
び窒化変調膜の耐蝕性,耐摩耗性,飽和磁化,熱処理後
の保磁力,比抵抗を示した。ただし耐摩耗性は、市販の
VTRデッキを使用し、テープを100時間走行させた後の摩
耗量によって測定した。表3には、窒化変調膜の摩耗量
として、非窒化膜の摩耗量を1とした時の相対値を示し
た。表3の窒化変調膜の変調波長は、全て500Åであ
る。ただし、窒化によって、磁気異方性、飽和磁歪がず
れ、最も良好な軟磁気特性を与える組成がずれる場合が
あるので、その際は窒素濃度に応じて、最適の組成を選
ぶ必要がある。
The above-mentioned nitriding improves the corrosion resistance and wear resistance not only for Fe-Si alloys but also for Fe-Co-Si alloys, Fe-Si-Ga alloys, Fe-
It was found that the same can be seen for Ge-Ga alloys, and that the same effect can be obtained for multilayering to obtain good soft magnetic characteristics. Table 3 shows the corrosion resistance, wear resistance, saturation magnetization, coercive force after heat treatment, and specific resistance of the monolayer films of these alloys and the nitride modulation film. However, wear resistance is
It was measured by the amount of wear after the tape was run for 100 hours using a VTR deck. Table 3 shows the relative value of the amount of wear of the nitrided modulation film when the amount of wear of the non-nitrided film is 1. The modulation wavelengths of the nitride modulation films in Table 3 are all 500Å. However, because nitriding may shift the magnetic anisotropy and the saturation magnetostriction, and the composition that gives the best soft magnetic characteristics may shift, in that case, it is necessary to select the optimum composition according to the nitrogen concentration.

発明の効果 本発明による磁性合金膜は、従来の磁性合金に比し
て、同等もしくはそれ以上の高飽和磁化(10000G)を
有し、耐蝕性,耐摩耗性に優れ、かつ電気抵抗の高い磁
気ヘッド等に適した磁性合金である。
EFFECTS OF THE INVENTION The magnetic alloy film according to the present invention has a high saturation magnetization (10000 G) which is equal to or higher than that of the conventional magnetic alloy, is excellent in corrosion resistance and wear resistance, and has high electric resistance. It is a magnetic alloy suitable for heads and the like.

【図面の簡単な説明】[Brief description of drawings]

第1図(a)は窒化多層膜の深さ方向の組成プロファイ
ルを示すグラフ、第1図(b)は窒化変調膜の深さ方向
の組成プロファイルを示すグラフ、第2図は窒化Fe−Si
合金膜の飽和磁化の窒素濃度依存性を示すグラフ、第3
図(a)はFe−Si合金膜の熱処理前のB−Hカーブを示
すグラフ、第3図(b)は同合金膜の熱処理後のB−H
カーブを示すグラフ、第4図(a)はFe−Si窒化単層膜
の熱処理前のB−Hカーブを示すグラフ、第4図(b)
は同合金膜の熱処理後のB−Hカーブを示すグラフ、第
5図(a)はFe−Si窒化多層膜のB−Hカーブヲ示すグ
ラフ、第5図(b)は窒化変調Fe−Si膜のB−Hカーブ
を示すグラフ、第6図は窒化変調Fe−Si膜の保磁力の変
調波長依存性を示すグラフである。
FIG. 1 (a) is a graph showing a composition profile in the depth direction of a nitride multilayer film, FIG. 1 (b) is a graph showing a composition profile in the depth direction of a nitride modulation film, and FIG. 2 is a Fe-Si nitride film.
Graph showing nitrogen concentration dependence of saturation magnetization of alloy film, third
FIG. 3A is a graph showing a BH curve before heat treatment of the Fe-Si alloy film, and FIG. 3B is a BH curve after heat treatment of the alloy film.
Fig. 4 (b) is a graph showing a curve, Fig. 4 (a) is a graph showing a BH curve before heat treatment of the Fe-Si nitride single layer film.
Is a graph showing a B-H curve after heat treatment of the alloy film, FIG. 5 (a) is a graph showing a B-H curve of a Fe-Si nitride multilayer film, and FIG. 5 (b) is a nitride-modulated Fe-Si film. FIG. 6 is a graph showing the B-H curve of FIG. 6 and FIG. 6 is a graph showing the modulation wavelength dependence of the coercive force of the nitride modulation Fe—Si film.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 G11B 5/706 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location G11B 5/706

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】膜全体の平均組成が原子組成%でTX
Nで表わされる磁性合金膜であって、TXからなる非窒
化膜とTXNとからなる窒化膜を交互に積層した多層膜に
おいて、窒化膜中のNを非窒化膜中に層間拡散すること
により、膜の厚さ方向に少なくともNが組成変調されて
いることを特徴とする磁性合金膜。ただしTはFe,Co,Ni
より成る群より選ばれた1種もしくは2種以上の元素、
XはSi,Ge,Gaより成る群より選ばれた1種もしくは2種
以上の元素、Nは窒素であって である。
1. The average composition of the entire film is TX in atomic composition%.
In a magnetic alloy film represented by N, in which a non-nitride film made of TX and a nitride film made of TXN are alternately laminated, by intercalating N in the nitride film into the non-nitride film, A magnetic alloy film in which at least N is composition-modulated in the thickness direction of the film. However, T is Fe, Co, Ni
One or more elements selected from the group consisting of
X is one or more elements selected from the group consisting of Si, Ge and Ga, and N is nitrogen. Is.
【請求項2】組成変調波長λが、λ≦2000Åであること
を特徴とする請求項1記載の磁性合金膜。
2. The magnetic alloy film according to claim 1, wherein the composition modulation wavelength λ is λ ≦ 2000Å.
【請求項3】原子組成%でTaXbNCなる組成を有する窒化
膜とTa′Xb′なる組成を有する非窒化膜を交互に積層し
た多層膜をスパッタ法を用いて形成する工程と、前記多
層膜を加熱して非窒化膜中にNを拡散させ、膜の厚さ方
向に少なくともNを組成変調する熱処理工程とを含むこ
とを特徴とする磁性合金膜の製造方法。ただし、TはF
e,Co,Niよりなる群より選ばれた1種もしくは2種以上
の元素、XはSi,Ge,Gaよりなる群より選ばれた1種もし
くは2種以上の元素、Nは窒素であって である。
3. A sputtering method is used to form a multilayer film in which a nitride film having a composition of T a X b N C in atomic composition% and a non-nitride film having a composition of T a ′ X b ′ are alternately laminated. A method of manufacturing a magnetic alloy film, comprising: a step of heating the multilayer film to diffuse N into a non-nitride film, and a heat treatment step of compositionally modifying at least N in a thickness direction of the film. However, T is F
one or more elements selected from the group consisting of e, Co and Ni, X is one or more elements selected from the group consisting of Si, Ge and Ga, N is nitrogen Is.
【請求項4】TaXbNC窒化膜及びTa′Xb′非窒化膜の膜厚
をそれぞれt,t′(Å)とする時、t≦1000Å、かつt
≧t′/2であることを特徴とする請求項3記載の磁性合
金膜の製造方法。
4. When the film thicknesses of the T a X b N C nitride film and the T a ′ X b ′ non-nitride film are respectively t and t ′ (Å), t ≦ 1000 Å and t
4. The method for manufacturing a magnetic alloy film according to claim 3, wherein ≧ t ′ / 2.
JP63042676A 1987-04-23 1988-02-25 Magnetic alloy film and manufacturing method thereof Expired - Lifetime JPH0817129B2 (en)

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JP63042676A JPH0817129B2 (en) 1987-04-23 1988-02-25 Magnetic alloy film and manufacturing method thereof

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62-100400 1987-04-23
JP10040087 1987-04-23
JP63042676A JPH0817129B2 (en) 1987-04-23 1988-02-25 Magnetic alloy film and manufacturing method thereof

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Publication Number Publication Date
JPS6432607A JPS6432607A (en) 1989-02-02
JPH0817129B2 true JPH0817129B2 (en) 1996-02-21

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JP2690904B2 (en) * 1987-08-10 1997-12-17 株式会社日立製作所 Heat resistant magnetic film
JPH03239312A (en) * 1990-02-16 1991-10-24 Victor Co Of Japan Ltd Magnetic alloy

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