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JPH0457608B2 - - Google Patents
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JPH0457608B2 - - Google Patents

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Publication number
JPH0457608B2
JPH0457608B2 JP57114653A JP11465382A JPH0457608B2 JP H0457608 B2 JPH0457608 B2 JP H0457608B2 JP 57114653 A JP57114653 A JP 57114653A JP 11465382 A JP11465382 A JP 11465382A JP H0457608 B2 JPH0457608 B2 JP H0457608B2
Authority
JP
Japan
Prior art keywords
raw material
ultra
nozzle
mixture
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57114653A
Other languages
Japanese (ja)
Other versions
JPS598619A (en
Inventor
Shuji Masuda
Yukihiro Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Otsuka Chemical Co Ltd
Original Assignee
Otsuka Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Otsuka Chemical Co Ltd filed Critical Otsuka Chemical Co Ltd
Priority to JP57114653A priority Critical patent/JPS598619A/en
Publication of JPS598619A publication Critical patent/JPS598619A/en
Publication of JPH0457608B2 publication Critical patent/JPH0457608B2/ja
Granted legal-status Critical Current

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  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Catalysts (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明はビスマス−ケイ素系非晶質化合物及び
その製造法に関し、更に詳しくは文献未記載のビ
スマス−ケイ素系新規物質及びその製造方法に関
する。 酸化ビスマス(Bi2O3)を主体とする酸化物系
セラミツクス及びその単結晶の研究は、近年のエ
レクトロニクス分野の発展に伴ない活発に行なわ
れており、就中特に光−電気、音−電気、雰囲気
ガス−電気、光音信向、X線分光等の変換素子材
料として、又触媒として盛んに研究されている。
Bi2O3とSiO2との安定な化合物としては、2,3
の文献に数種の結晶体についてのみ記載されてい
るだけであり、これ等の単結晶化の研究が盛んに
行なわれているが、非晶質化合物としての研究は
いまなお全く行なわれていない。 本発明は従来全く知られていないビスマス−ケ
イ素系の非晶質化合物を新たに合成したものであ
り、即ち本発明は(SiO2X・(Bi2O31-X(但し、
1>x>0)の組成を有する新規ビスマス−ケイ
素系非晶質化合物及び(SiO2X及び(Bi2O31-X
(但し、1>x>0)の混合物を加熱溶融せしめ
た後超急冷することを特徴とするビスマス−ケイ
素系非晶質化合物の製造法に係るものである。 本発明の製造法に従つて下記に説明する。 本発明に於いて使用する原料は酸化ビスマスと
酸化ケイ素との混合物であり、その組成割合は
(SiO2X・(Bi2O31-X(但し、1>x>0)であ
る。上記組成比の原料混合物を加熱溶融し、これ
を超急冷する。加熱溶融はこれ等原料混合物が充
分に溶融する温度以上で良く、溶融する温度より
も好ましくは50〜200℃以上特に好ましくは80〜
150℃以上高い温度で加熱する。 加熱時の雰囲気としては特に制限は無く、通常
空気中で行う。次いで原料混合物の融液を超急冷
する。この際超急冷することは極めて重要であつ
て、これによりはじめて非晶質新規化合物を収得
することが出来る。超急冷は通常104〜106℃/秒
程度の冷却速度で行う。この超急冷は上記冷却速
度で冷却出来る手段であれば広い範囲で各種の手
段が採用出来、その代表的な方法として、高速回
転中のロール表面上に原料混合物の融液を噴霧し
て液体状態の原子配置にて同化せしめる方法を代
表例として挙げることが出来る。該手段を更に詳
しく説明すると下記の通りである。 本発明法実施の際に使用される代表的な装置の
一例について図面を用いて下記に示す。 第7図は急冷装置の正面図であり、1は急冷用
回転ロール、2は原料加熱用ノズル付チユーブ、
3は誘電加熱用コイルを示す。第8図はチユーブ
支持体を示す図であり、4はニードルバルブ、5
はブローエアー導入口、6は冷却水排出口、7は
冷却水導入口を示す。この支持体には内部を冷却
水で冷却可能となし、ロール表面とチユーブノズ
ル口との間隙の後調整機構3が取つけられてお
り、また原料融液を均一に押出すための整流用目
皿9が先端にとりつけてある。第9図は効率的に
急冷させさらにロール自体を空冷さす目的でロー
ル内部にフアンを設置しロール表面側端部に空気
吸込み口を設けた安定急冷型空冷ロールに関する
図面であり、同図イはその正面図、ロは側面断面
図であり、ハはスリツト穴の形状説明図を示す。
第10図イはロール表面で回転により発生する風
切り渦流の防止用向流吹出しノズルを、同図ロは
融液の落下防止のための原料チユーブ先端ノズル
部の局部冷却用エアーノズルを示す。 これ等ノズルはいずれも石英管で調製されてい
るのが好ましい。第11図は原料加熱用チユーブ
とノズル形状を示し、はスリツトノズル、は
丸形穴をもつノズル、は巾広用多段スリツト、
及びEは傾斜角を持つたスリツトノズルであ
る。 先ず所定組成の原料混合物を融液吹出し用ノズ
ルを有するチユーブ内に収納する。このチユーブ
は高温酸化雰囲気状態で充分耐久性のある材質で
作られ、好ましくはたとえば白金、白金−ロジウ
ム、イリジウム、窒化ケイ素、窒化ボロン等で作
られたものが良い。尚原料融液と直接接触しない
部分の材質は高融点のセラミツクス、ガラス、金
属でも良い。ノズル口の形状は目的製品に応じて
適宜に決定され、たとえば細い線状材料の場合は
丸い形状で、巾の広い製品の場合はスリツト状の
口形状のものを使用する。チユーブ内に収納され
た原料混合物は次いでその融点以上の温度に加熱
され融液とされた後、高速回転しているロール面
上に一定ガス圧にて融液を吹出してロール表面上
で急冷せしめる。この際のノズル口とロール面に
おける原料融液の吹出し角度は目的物化合物の巾
が約3mm以下の場合ロール面に対して垂直方向で
良く、またその巾が約3mm以上の場合はロール面
垂線に対して0°〜45°の吹き出し角度である。こ
れ等の吹き出し角度は装置自体に所定の角度を設
定可能な機構を組み込むことも出来るが、好まし
くはノズルを加工する手段である。 原料混合物の加熱方法は特に制限されるもので
はないが、通常発熱体を有する炉、誘電加熱炉ま
たは集光加熱炉で行う。この加熱により原料混合
物は加熱溶融されるが、この際の原料融液の温度
はその融点より50〜200℃好ましくは80〜150℃程
度高い温度が良い。この際融点よりあまり高くな
いと融液をロール面上に吹き出している間にノズ
ル附近で冷却固化する恐れが生じ、また逆にあま
りにも高くなりすぎるとロール面上での急冷に支
障を来たす恐れが生ずる。 ロール面上に融液を吹き出すために使用する加
圧ガスのガスとしては不活性ガスが好ましく、た
とえばアルゴン、窒素、ヘリウム等でも良いが、
融液原料を還元させる恐れがあるため、乾燥圧縮
空気が好ましい。そのガス圧はノズル口の大きさ
にもよるが、通常0.1〜2.0Kg/cm2好ましくは0.5〜
1.0Kg/cm2程度である。また原料融液を吹き出す
際のノズル口とロール面間の距離は0.01〜1.0mm
程度が良く、特に好ましくは0.05〜0.5mm程度で
ある。0.01mmよりも小さな場合、パドル量が非常
に少なくなり、均一な材料は得られず1.0mm以上
の場合、パドル量が過剰になつたり、組成融液の
界面張力により形成されるパドル厚さ以上の場合
にはパドルが形成され難くなる傾向が生ずる場合
がある。 ロールの材質は熱伝導性の良い銅及びその合
金、硬質クロムメツキ層を有する上記材料、さら
には鋼、ステンレス等であり、そのロールの速度
は5m/秒〜35m/秒、好ましくは10m/秒〜
20m/秒で急冷することにより目的とする良質の
非晶質化合物材料が得られる。この際ロール周速
度が5m/秒以下の場合非晶質化し難い傾向が生
じるのであまり好ましくない。 周速度が35m/秒よりも大きくなると、得られ
る目的物材料の形状が非常に薄膜化し、すべて鱗
片状もしくは細粉状となるが材料構造的には本発
明の非晶質化合物材料である融液原料を回転ロー
ル面上へ吹き出す雰囲気としては減圧下乃至高真
空下、又は不活性ガス雰囲気中での本発明化合物
の製造は可能であるが高温状態での原料融液の還
元が発生し組成原子中の酸素原子の減少が起り、
得られる材料が紫色もしくは黒色等の着色が発生
する。しかし乍ら物性的には本発明化合物であ
り、着返された状態で使用可能である。 また原料混合物をチユーブ内で加熱溶融せしめ
るに際しては該混合物をすべて完全に融液化する
ことが必要である。しかし乍ら該混合物が完全に
融液化する前に一部融液化したものがノズル先端
より流出してしまう恐れがあるため、ノズル先端
を局部的に冷却して融液の流出を防止することが
好ましい。ノズルを局部的に冷却する代表的手段
はノズル先端に冷却用ガスを吹きつける手段であ
り、ガスとしてはアルゴン、ヘリウム、窒素等の
不活性ガスでも良いが乾燥冷圧縮空気が好まし
い。 本発明に係る新規なる非晶質化合物材料は通常
50〜10μm程度の厚さであり、非常にもろい材料
である。このためロール面で急冷され固体化され
た後できる限り材料に応力が加えられない状態に
することが好ましい。応力付加となる原因に大気
中でのロール回転により発生する風切り現象から
くるロール表面空気層の大きな乱流がある。この
乱流防止は必要であり、このため並びに急冷却さ
すべき溶融原料混合物とロール面との密着性をよ
り良好とするために、風切り防止用向流吹出しノ
ズルを設置するが、ロール内部にフアンを固定設
置する。後者の場合はロールの自転によりロール
表面側端部に設けられた口径可変式の空気導入口
よりロール内部へ発生する乱流をすい込み、ロー
ル軸正面より排出し、ロール表面上の空気をロー
ル内部へ移動せしめ、これにより溶融物をロール
面より押しつけ密着させ、さらに空気の吹込み移
動によりロール自体をも空冷さすことが出来る。
また得られる材料の寸法均一性を保持させるため
にロール表面に回転方向とは直角に材料切断用の
溝を設けておけば材料長さが一定寸法で切断され
裁断された材料が得られる。 本発明のビスマス−ケイ素系化合物はその原料
混合比により化合物の原子配列構造が大きく変化
し、大別して三つに分別される。先ず0.4≦x<
1の場合は非晶質化合物が100%のものが、0.15
≦x<0.4の場合はδ−Bi2O3多結晶相少量と非晶
質化合物との化合物が、また0<x<0.15ではα
−Bi2O3とγ−Bi2O3の多結晶相及び(SiO2X
(Bi2O31-X固溶体多結晶相を含む非晶質化合物が
得られる。いま本発明化合物の生成範囲を第1図
に示す。又ロールの回転数の変化すなわち周速度
変化範囲が5m/秒〜35m/秒では、各組成変化
において得られる材料の構造変化は大きく差が認
められない。これを第2図イ〜ハに示す。 尚第2図イは(Bi2O31-X・(SiO2Xに於いてx
が0.25、同図ロは14.29で周速度17.27m/秒の場
合を、同図ハはxが0.33で各種の周速度の場合を
示す。 本発明で得られる材料の構造を同定する手段と
してはX線回折及び偏光顕微鏡により結晶性の有
無及び構造解析を行い、極少部分については走査
型電子顕微鏡によつた。 復記実施例のTestNo.30の本発明の代表的な非
晶質化合物の写真を第3図に、またTestNo.16の
ものの走査型電子顕微鏡写真(24000倍)を第4
図に示す。同じく第5図に示差熱分析の結果を示
す。また赤外線吸収スペクトルを第6図に示す。
尚第6図中イはTestNo.30、ロはTestNo.8のもの
である。 以下に実施例を示して本発明を具体的に説明す
る。 実施例 原料としてBi2O3(純度99.9%)及びSiO2(純度
99.9%)を使用し、所定の配合割合にて均一混合
後850℃にて30分仮焼せしめ、取出して放冷後再
度粉砕混合して組成物原料とした。この組成物原
料を白金チユーブ(ψ10mm×長さ150mm)に充填
し、誘電加熱コイル内に設置した。誘電加熱は発
振管繊条電圧13V、陽極電圧10KV、格子電流120
〜150mA、陽極電流1.2〜1.8Aで行ない組成原料
を融液化せしめ回転ロール表面上へ乾燥圧縮空気
にて吹き出させ急冷せしめた。第1〜2表に条件
値及び得られた材料を示す。TestNo.1〜20は本
発明の要件を満す条件であり、TestNo.21〜29は
不適な条件である。
The present invention relates to a bismuth-silicon based amorphous compound and a method for producing the same, and more particularly to a new bismuth-silicon based material that has not been described in any literature and a method for producing the same. Research into oxide-based ceramics and their single crystals, mainly consisting of bismuth oxide (Bi 2 O 3 ), has been actively conducted in line with the recent development of the electronics field, with particular focus on opto-electrical and audio-electrical fields. It has been actively researched as a conversion element material for atmospheric gas-electricity, photoacoustic signals, X-ray spectroscopy, etc., and as a catalyst.
As a stable compound of Bi 2 O 3 and SiO 2 , 2,3
Only a few types of crystalline forms are described in the literature, and research into single crystallization of these compounds is actively conducted, but no research has been conducted on them as amorphous compounds. . The present invention is a newly synthesized bismuth-silicon-based amorphous compound that has been completely unknown in the past.In other words, the present invention synthesizes (SiO 2 ) X. (Bi 2 O 3 ) 1-X (However,
A novel bismuth-silicon amorphous compound having a composition of 1>x>0) and (SiO 2 ) X and (Bi 2 O 3 ) 1-X
The present invention relates to a method for producing a bismuth-silicon amorphous compound, which is characterized by heating and melting a mixture (1>x>0) and then ultra-quenching the mixture. The manufacturing method of the present invention will be explained below. The raw material used in the present invention is a mixture of bismuth oxide and silicon oxide, and its composition ratio is (SiO 2 ) X・(Bi 2 O 3 ) 1-X (1>x>0) . A raw material mixture having the above composition ratio is heated and melted, and then cooled extremely rapidly. The heating and melting may be carried out at a temperature higher than the temperature at which these raw material mixtures are sufficiently melted, preferably 50 to 200°C or higher than the melting temperature, particularly preferably 80 to 200°C.
Heat at a temperature higher than 150℃. There are no particular restrictions on the atmosphere during heating, and heating is usually performed in air. Next, the melt of the raw material mixture is ultra-quenched. At this time, it is extremely important to perform ultra-rapid cooling, and only then can a new amorphous compound be obtained. Ultra-rapid cooling is usually performed at a cooling rate of about 10 4 to 10 6 °C/sec. A wide variety of methods can be used for this ultra-quenching as long as it can cool at the above-mentioned cooling rate.A typical method is to spray the melt of the raw material mixture onto the surface of a roll rotating at high speed to form a liquid state. A typical example is the method of assimilation based on the atomic arrangement of The means will be explained in more detail below. An example of a typical apparatus used in carrying out the method of the present invention will be described below with reference to the drawings. FIG. 7 is a front view of the quenching device, in which 1 is a rotating roll for quenching, 2 is a tube with a nozzle for heating the raw material,
3 indicates a dielectric heating coil. FIG. 8 is a diagram showing the tube support, 4 is a needle valve, 5
6 indicates a blow air inlet, 6 indicates a cooling water outlet, and 7 indicates a cooling water inlet. The inside of this support can be cooled with cooling water, and is equipped with a post-adjustment mechanism 3 for the gap between the roll surface and the tube nozzle opening, and a rectification eye for uniformly extruding the raw material melt. A plate 9 is attached to the tip. Fig. 9 is a drawing of a stable quenching type air-cooled roll in which a fan is installed inside the roll and an air suction port is provided at the end of the roll surface for the purpose of efficiently quenching and air-cooling the roll itself. Its front view, B is a side sectional view, and C is an explanatory diagram of the shape of the slit hole.
FIG. 10A shows a countercurrent blow-off nozzle for preventing wind vortices generated by rotation on the roll surface, and FIG. Preferably, all of these nozzles are made of quartz tubes. Figure 11 shows the tube and nozzle shapes for heating the raw material.
and E are slit nozzles with an inclined angle. First, a raw material mixture having a predetermined composition is stored in a tube having a nozzle for blowing out the melt. The tube is made of a material sufficiently durable under high temperature oxidizing atmosphere conditions, preferably of platinum, platinum-rhodium, iridium, silicon nitride, boron nitride, or the like. The material of the parts not in direct contact with the raw material melt may be high melting point ceramics, glass, or metal. The shape of the nozzle opening is appropriately determined depending on the target product; for example, a round shape is used for thin linear materials, and a slit-shaped mouth is used for wide products. The raw material mixture stored in the tube is then heated to a temperature above its melting point to form a melt, and then the melt is blown out at a constant gas pressure onto the roll surface that is rotating at high speed and is rapidly cooled on the roll surface. . At this time, the blowing angle of the raw material melt between the nozzle opening and the roll surface may be perpendicular to the roll surface if the width of the target compound is approximately 3 mm or less, and if the width is approximately 3 mm or more, it may be perpendicular to the roll surface. The blowout angle is between 0° and 45°. Although it is possible to incorporate a mechanism for setting a predetermined angle into the device itself, it is preferable to use means for machining the nozzle. The method of heating the raw material mixture is not particularly limited, but it is usually carried out in a furnace equipped with a heating element, a dielectric heating furnace, or a condensing heating furnace. The raw material mixture is heated and melted by this heating, and the temperature of the raw material melt at this time is preferably about 50 to 200°C higher than its melting point, preferably about 80 to 150°C. At this time, if the temperature is not much higher than the melting point, there is a risk that the melt will cool and solidify near the nozzle while being blown out onto the roll surface, and conversely, if the temperature is too high, it may interfere with rapid cooling on the roll surface. occurs. The pressurized gas used to blow out the melt onto the roll surface is preferably an inert gas, such as argon, nitrogen, helium, etc.
Dry compressed air is preferred since it may reduce the melt raw material. The gas pressure depends on the size of the nozzle opening, but is usually 0.1 to 2.0 Kg/cm2, preferably 0.5 to 2.0 kg/ cm2 .
It is about 1.0Kg/cm2. Also, the distance between the nozzle opening and the roll surface when blowing out the raw material melt is 0.01 to 1.0 mm.
The thickness is good, particularly preferably about 0.05 to 0.5 mm. If it is smaller than 0.01 mm, the puddle amount will be very small and a uniform material cannot be obtained. If it is larger than 1.0 mm, the puddle amount will be excessive or the puddle thickness formed by the interfacial tension of the composition melt will be exceeded. In this case, there may be a tendency for a paddle to be difficult to form. The material of the roll is copper and its alloy with good thermal conductivity, the above materials with a hard chrome plating layer, steel, stainless steel, etc., and the speed of the roll is 5 m/sec to 35 m/sec, preferably 10 m/sec to
By rapidly cooling at 20 m/sec, the desired amorphous compound material of high quality can be obtained. In this case, if the peripheral speed of the roll is 5 m/sec or less, it is not very preferable because it tends to be difficult to become amorphous. When the circumferential speed is greater than 35 m/sec, the shape of the target material obtained becomes extremely thin, and all of it becomes scaly or fine powder-like. Although it is possible to produce the compound of the present invention under reduced pressure to high vacuum or in an inert gas atmosphere as the atmosphere in which the liquid raw material is blown onto the rotating roll surface, reduction of the raw material melt at high temperatures occurs and the composition A decrease in oxygen atoms in the atoms occurs,
The resulting material may be colored purple or black. However, it is physically a compound of the present invention and can be used in a reconstituted state. Furthermore, when heating and melting the raw material mixture in the tube, it is necessary to completely melt the mixture. However, before the mixture is completely molten, some of the molten material may flow out from the nozzle tip, so it is necessary to locally cool the nozzle tip to prevent the melt from flowing out. preferable. A typical means for locally cooling the nozzle is to blow a cooling gas onto the tip of the nozzle, and the gas may be an inert gas such as argon, helium, or nitrogen, but dry, cold compressed air is preferred. The novel amorphous compound material according to the present invention is usually
It is a very fragile material with a thickness of about 50 to 10 μm. For this reason, it is preferable to maintain a state in which stress is not applied to the material as much as possible after it is rapidly cooled and solidified on the roll surface. The cause of the stress addition is the large turbulent flow in the air layer on the roll surface caused by the wind phenomenon caused by the roll rotation in the atmosphere. It is necessary to prevent this turbulent flow, and for this purpose and to improve the adhesion between the molten raw material mixture to be rapidly cooled and the roll surface, a countercurrent blowout nozzle is installed to prevent wind blowing. be fixedly installed. In the latter case, the turbulent flow generated inside the roll due to rotation of the roll is absorbed into the roll through a variable-diameter air inlet provided at the end of the roll surface, and is discharged from the front of the roll axis. By moving the melt into the inside, the molten material is pressed against the roll surface, and the roll itself can be cooled by air blowing and movement.
Further, in order to maintain the dimensional uniformity of the obtained material, if grooves for cutting the material are provided on the roll surface at right angles to the direction of rotation, the material can be cut to a constant length and a cut material can be obtained. The atomic arrangement structure of the bismuth-silicon compound of the present invention varies greatly depending on the raw material mixing ratio, and can be roughly classified into three types. First, 0.4≦x<
In case of 1, 100% amorphous compound is 0.15
When ≦x<0.4, a compound of a small amount of δ-Bi 2 O 3 polycrystalline phase and an amorphous compound, and when 0<x<0.15, α
−Bi 2 O 3 and γ−Bi 2 O 3 polycrystalline phase and ( SiO 2 )
(Bi 2 O 3 ) An amorphous compound containing a 1-X solid solution polycrystalline phase is obtained. The production range of the compound of the present invention is shown in FIG. Further, when the rotational speed of the roll changes, that is, the circumferential speed changes in the range of 5 m/sec to 35 m/sec, there is no significant difference in the structural changes of the material obtained with each composition change. This is shown in Figure 2 A to C. In addition, Fig. 2 A is (Bi 2 O 3 ) 1-X・(SiO 2 )
is 0.25, and the same figure (b) shows the case where x is 14.29 and the circumferential speed is 17.27 m/sec, and the same figure (c) shows the case where x is 0.33 and various circumferential speeds. As a means of identifying the structure of the material obtained in the present invention, the presence or absence of crystallinity and structural analysis were performed using X-ray diffraction and a polarizing microscope, and a scanning electron microscope was used for a very small portion. A photograph of a typical amorphous compound of the present invention in Test No. 30 of the reprinted example is shown in Figure 3, and a scanning electron micrograph (24000x) of Test No. 16 is shown in Figure 4.
As shown in the figure. Similarly, FIG. 5 shows the results of differential thermal analysis. Moreover, the infrared absorption spectrum is shown in FIG.
In Figure 6, A is for Test No. 30 and B is for Test No. 8. EXAMPLES The present invention will be specifically described below with reference to Examples. Examples Bi 2 O 3 (purity 99.9%) and SiO 2 (purity
99.9%) was uniformly mixed at a predetermined blending ratio, calcined at 850°C for 30 minutes, taken out, allowed to cool, and ground and mixed again to obtain a composition raw material. This composition raw material was filled into a platinum tube (ψ10 mm x length 150 mm), which was placed inside a dielectric heating coil. Dielectric heating is oscillation tube fiber voltage 13V, anode voltage 10KV, grid current 120
This was carried out at ~150 mA and an anode current of 1.2 to 1.8 A to melt the raw materials, which were then blown onto the surface of a rotating roll with dry compressed air to rapidly cool them. Tables 1 and 2 show the condition values and the obtained materials. Test Nos. 1 to 20 are conditions that satisfy the requirements of the present invention, and Test Nos. 21 to 29 are unsuitable conditions.

【表】【table】

【表】【table】

【表】【table】

【表】【table】 【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明化合物の組成範囲を示す図面、
第2図はそのX線回折図、第3図はその示差熱分
析図、第4図はその赤外線吸収スペクトルを示
す。また第5〜6図は本発明法実施に使用する各
種装置の一例を示す図面であり、第5図は急冷装
置の正面図、第6図はチユーブ支持体の縦断面図
を示す。
FIG. 1 is a drawing showing the composition range of the compound of the present invention,
Figure 2 shows its X-ray diffraction diagram, Figure 3 its differential thermal analysis diagram, and Figure 4 its infrared absorption spectrum. 5 and 6 are drawings showing examples of various apparatuses used in carrying out the method of the present invention, with FIG. 5 showing a front view of the quenching device, and FIG. 6 showing a longitudinal sectional view of the tube support.

Claims (1)

【特許請求の範囲】 1(SiO2X・(Bi2O31-X(但し、1>X>0)の
組成を有する新規ビスマス−ケイ素系非晶質化合
物。 2 (SiO2X及び(Bi2O31-X(但し、1>X>
0)の混合物を加熱溶融せしめた後、超急冷する
ことを特徴とするビスマス−ケイ素系非晶質化合
物の製造法。 3 104〜106℃/秒の速度で超急冷することを特
徴とする特許請求の範囲第2項の製造法。 4 超急冷を固体接触液体超急冷法により行なう
ことを特徴とする特許請求の範囲第2項の製造
法。 5 その底部にスリツト形状若しくは丸形、楕円
形の穴を設けた吹出しノズルを有するチユーブに
原料混合物を投入し、該混合物の融点より50〜
200℃高い温度にて加熱溶融せしめた後、周速度
が5〜35m/秒で回転しているロール表面上へ吹
出して急冷せしめることを特徴とする特許請求の
範囲第2項の製造法。 6 原料混合物の溶融温度以上の高温酸化雰囲気
中で安定な材質からなり、そのノズルの先端から
原料混合物の溶融液を所要時以外には滴下しない
ように冷却用ガスでノズル先端部のみを冷却せし
め得るように設計されたノズルを使用して超急冷
を行なうことを特徴とする特許請求の範囲第2項
の製造法。
[Scope of Claims] A novel bismuth-silicon amorphous compound having a composition of 1(SiO 2 ) X ·(Bi 2 O 3 ) 1-X (where 1>X>0). 2 (SiO 2 ) X and (Bi 2 O 3 ) 1-X (However, 1>X>
1. A method for producing a bismuth-silicon amorphous compound, which comprises heating and melting the mixture of item 0) and then ultra-quenching the mixture. 3. The manufacturing method according to claim 2, characterized in that the ultra-rapid cooling is carried out at a rate of 3 10 4 to 10 6 °C/sec. 4. The manufacturing method according to claim 2, characterized in that the ultra-quenching is carried out by a solid contact liquid ultra-quenching method. 5. Pour the raw material mixture into a tube that has a blow-out nozzle with a slit-shaped, round, or oval hole at the bottom, and
The manufacturing method according to claim 2, which comprises heating and melting at a temperature higher than 200°C, and then blowing it onto the surface of a roll rotating at a circumferential speed of 5 to 35 m/sec to rapidly cool it. 6. It is made of a material that is stable in a high-temperature oxidizing atmosphere that is higher than the melting temperature of the raw material mixture, and only the tip of the nozzle is cooled with cooling gas so that the molten liquid of the raw material mixture does not drip from the tip of the nozzle unless necessary. 3. The manufacturing method according to claim 2, characterized in that the ultra-rapid cooling is carried out using a nozzle designed to obtain the desired results.
JP57114653A 1982-06-30 1982-06-30 Bismuth-silicon amorphous compound and its preparation Granted JPS598619A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57114653A JPS598619A (en) 1982-06-30 1982-06-30 Bismuth-silicon amorphous compound and its preparation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57114653A JPS598619A (en) 1982-06-30 1982-06-30 Bismuth-silicon amorphous compound and its preparation

Publications (2)

Publication Number Publication Date
JPS598619A JPS598619A (en) 1984-01-17
JPH0457608B2 true JPH0457608B2 (en) 1992-09-14

Family

ID=14643185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57114653A Granted JPS598619A (en) 1982-06-30 1982-06-30 Bismuth-silicon amorphous compound and its preparation

Country Status (1)

Country Link
JP (1) JPS598619A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101891274A (en) * 2010-07-27 2010-11-24 北京师范大学 A method for outdoor natural light-hydrogen peroxide synergistic treatment of crystal violet polluted sewage

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101891274A (en) * 2010-07-27 2010-11-24 北京师范大学 A method for outdoor natural light-hydrogen peroxide synergistic treatment of crystal violet polluted sewage

Also Published As

Publication number Publication date
JPS598619A (en) 1984-01-17

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