Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPH0470840B2 - - Google Patents
[go: Go Back, main page]

JPH0470840B2 - - Google Patents

Info

Publication number
JPH0470840B2
JPH0470840B2 JP57042051A JP4205182A JPH0470840B2 JP H0470840 B2 JPH0470840 B2 JP H0470840B2 JP 57042051 A JP57042051 A JP 57042051A JP 4205182 A JP4205182 A JP 4205182A JP H0470840 B2 JPH0470840 B2 JP H0470840B2
Authority
JP
Japan
Prior art keywords
substrate
boron
film
diaphragm
skin material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57042051A
Other languages
Japanese (ja)
Other versions
JPS58159096A (en
Inventor
Hiroshi Takeuchi
Yoshiaki Maruno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57042051A priority Critical patent/JPS58159096A/en
Publication of JPS58159096A publication Critical patent/JPS58159096A/en
Publication of JPH0470840B2 publication Critical patent/JPH0470840B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00Diaphragms for electromechanical transducers; Cones
    • H04R7/02Diaphragms for electromechanical transducers; Cones characterised by the construction

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)

Description

【発明の詳細な説明】 本発明は、心材の表面にスキン材を接合してな
るサンドイツチ構造体よりなるスピーカ用振動板
の製造方法に関するものであり、その目的とする
ところはスキン材としてのボロンの膜を心材に対
して接合することができるスピーカ用振動板の製
造方法を提供することにある。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a speaker diaphragm made of a sanderch structure in which a skin material is bonded to the surface of a core material. An object of the present invention is to provide a method for manufacturing a speaker diaphragm in which a membrane of the present invention can be bonded to a core material.

一般に、スピーカ用振動板は、その使用周波数
帯域内において電磁変換系によつて与えられる駆
動力に対して十分な直線性を有して追従するとと
もに、全面が同位相で振動(ピストン振動)する
ことが理想とされている。また、音波放射特性の
面からは、放射面を平坦にしたいわゆる平面振動
板が理想とされている。この平面振動板では分割
共振を防いでピストン振動帯域を広げるため、振
動板の厚みを増して剛性を高めており、この関係
で振動板重量が増加し、スピーカの能率が低下す
るという欠点を有している。この欠点を改良する
方法として、中空コアよりなる心材の表面にスキ
ン材を接着したサンドイツチ構造体を用いた振動
板が実用化されているが、このようなサンドイツ
チ構造体を用いても十分な軽量化はむずかしいも
のであつた。また、サンドイツチ構造体を構成す
る材料を薄くして軽量化をはかると、振動体の強
度が低下し、部分共振(面鳴き現象)を生じて音
響特性が劣化するという問題があつた。これを改
良するため、低密度で弾性率の高い材料が望まれ
ている。この要求を満たす材料として、ボロンや
ベリリウムがあるが、これらの材料はいずれも加
工性が悪く、アルミニウムやチタンのように10〜
20μmの圧延による製箔が不可能であつた。そこ
で、PVD法やCVD法などの気相成長技術によつ
てボロンやベリリウムの材料を製箔して用いる試
みがなされているが、従来のベリリウムやボロン
およびその複合材料を用いたスピーカ用振動板は
いずれもドーム状やコーン状のものに限られてい
た。これは、PVD法により生成した膜には、格
子欠陥、表面張力、相転移などの種々の要因によ
つて生成膜に内部応力かが残留し、この残留応力
によつて生成膜の反りや歪が発生することに起因
し、ドーム状やコーン状の振動板では形状による
剛性が気相成長膜の内部応力に比べて十分に大き
いため、形状の歪はあまり大きな問題にならなか
つたためであろう。しかしながら、平面形状にお
いては内部応力による形状歪が重要な欠点となつ
ていた。特にボロンやベリリウムは脆性が高いた
め、反りや歪を生じた生成膜を機械的に平坦に伸
ばすことは不可能であり、生成後の熱処理によつ
て生成膜の残留応力を低下させる改良方法を用い
ても十分な効果は得られなかつた。
In general, a speaker diaphragm follows the driving force provided by the electromagnetic conversion system with sufficient linearity within the frequency band in which it is used, and its entire surface vibrates in the same phase (piston vibration). That is considered ideal. Furthermore, from the perspective of sound wave radiation characteristics, a so-called flat diaphragm with a flat radiation surface is considered ideal. In this planar diaphragm, in order to prevent split resonance and widen the piston vibration band, the thickness of the diaphragm is increased to increase its rigidity, which has the disadvantage of increasing the weight of the diaphragm and reducing the efficiency of the speaker. are doing. As a method to improve this drawback, a diaphragm using a sanderch structure in which a skin material is bonded to the surface of a core material made of a hollow core has been put into practical use. It was difficult to adapt. Furthermore, when the material constituting the sanderch structure is made thinner to reduce its weight, there is a problem in that the strength of the vibrating body decreases, causing partial resonance (plane noise phenomenon) and deteriorating acoustic characteristics. To improve this, materials with low density and high elastic modulus are desired. Boron and beryllium are materials that meet this requirement, but these materials have poor workability and, like aluminum and titanium,
It was impossible to produce foil by rolling to a thickness of 20 μm. Therefore, attempts have been made to use boron and beryllium materials in foil using vapor deposition techniques such as PVD and CVD, but conventional speaker diaphragms using beryllium, boron, and their composite materials All of these were limited to dome or cone shapes. This is because internal stress remains in films produced by the PVD method due to various factors such as lattice defects, surface tension, and phase transitions, and this residual stress can cause warping and distortion of the produced film. This is probably due to the fact that in dome-shaped or cone-shaped diaphragms, the rigidity due to the shape is sufficiently large compared to the internal stress of the vapor-grown film, so shape distortion is not a big problem. . However, in the planar shape, shape distortion due to internal stress has been an important drawback. In particular, boron and beryllium are highly brittle, so it is impossible to mechanically stretch warped or distorted films flat, so an improved method of reducing the residual stress in the formed film through post-formation heat treatment has been developed. Even when used, sufficient effects could not be obtained.

本発明はこのような従来法の欠点を解消するも
のであり、低密度、高弾性率を有する材料の平坦
なスキン材を提供し、高性能な平面振動の板実現
をはかるものである。
The present invention eliminates these drawbacks of the conventional method, and provides a flat skin material having low density and high elastic modulus, thereby realizing a high-performance plane vibration plate.

本発明の骨子となるスキン材の製造方法につい
て説明する。従来のPVD法ではイオン化粒子の
有無に関係なく、先述したように生成した膜には
内部応力が残留し、生成膜に反りや歪を発生させ
る。特にイオン粒子を伴つた気相生長法ではイオ
ンの衝撃的な埋め込みによつて応力の発生が著る
しいものであつた。このような内部応力を低減す
るために基板を加熱しながら気相成長を行う方法
が用いられているが、反りや歪のない平坦な生成
膜を得るには多くの制限が加えられる。例えば、
ボロン膜の生成の場合、発明者らの経験では期板
を600℃以上に加熱しながら生成した場合にはか
なり平坦性の良い膜が得られるが、真空中で基板
を600℃以上に加熱すると、基板が熱歪を生じて
変形する他、加熱部や基板および装置壁面から温
度上昇によつて脱ガスが激しく、生成中のガス
圧、雰囲気条件が限定され、その結果生成膜の膜
質の低下を生じる。また、プラネタリーなどの基
板駆動機構を用いる場合には、回転機構の耐熱性
や加熱装置(赤外線加熱など)の容量等、装置の
設計上問題が生じ、安定の稼動が困難であつた。
これに対し、本発明によるPVD法では400℃前後
の低い基板温度で生成膜の残留応力による反りを
なくすことができるので、前述した従来法の欠点
を排除することができるものである。また、本発
明より成るPVD法によつて生成被膜の反りを防
止しうるメカニズムについて説明すると、たとえ
ば、真空蒸着法によつて基板上に被膜を生成する
場合、基板には治具のベーキング、蒸発源からの
輻射熱、蒸発粒子からの熱伝導および蒸着粒子と
基板または被膜との反応熱などが伝わり、これに
よつて時間とともに温度変化を生じる。この時、
蒸発粒子が再固化する基板あるいは生成膜の表面
においては輻射熱、蒸発粒子からの伝導熱などが
大きく影響し、常に熱膨張を続けている。このよ
うな面に蒸発粒子が付着した場合、熱膨張ととも
に被膜生成面が広がり、蒸発粒子を多く受ける。
このような条件下で生成した被膜は蒸着終了後、
その温度が降下するとともに収縮を生じるので生
成膜内には厚さ方向に収縮差を生じる。すなわ
ち、蒸着初期の被膜は膨張−収縮力が大きく、蒸
着終了時にはこの応力が小さくなる。このような
生成被膜内部における応力差によつて被膜が湾曲
し、基板が薄い場合には被膜の応力と基板の応力
が加わつた方向に湾曲を生じる。発明者らは基板
の持つ湾曲形状と生成被膜自体の湾曲形状が異な
ることを見出し、こような考えにもとずいて基板
温度が被膜生成面と同じになるように制御するこ
とによつて被膜の湾曲(カール)を防止すること
ができることに到達したものである。この場合、
生成時の基板温度の降下速度は基板材料、蒸発材
料、蒸発源の輻射熱量などによつて異なるため、
一概に定めることはむずかしいが、定性的に温度
勾配が下降状態にある方が良い結果が得られる。
つまり、本発明より成るPVD法の基本は蒸着中
に基板温度を上昇させないことである。しかし、
蒸着中には蒸着源からの輻射熱を受けるので、基
板の温度は蒸着時間とともに上昇する。したがつ
て、基板の加熱温度は蒸発源の輻射熱量、蒸発源
と基板との距離、蒸着時間によつて必要最低温度
が定められるので、条件設定には、この点の配慮
が必要となる。
A method for manufacturing a skin material, which is the gist of the present invention, will be explained. In the conventional PVD method, regardless of the presence or absence of ionized particles, internal stress remains in the produced film as described above, causing warpage and distortion in the produced film. In particular, in the vapor phase growth method using ion particles, stress was generated significantly due to the impactful embedding of ions. In order to reduce such internal stress, a method is used in which vapor phase growth is performed while heating the substrate, but there are many limitations to obtaining a flat film without warping or distortion. for example,
In the case of boron film formation, the inventors' experience is that a film with fairly good flatness can be obtained if the substrate is heated to 600°C or higher, but if the substrate is heated to 600°C or higher in vacuum, In addition to thermal distortion and deformation of the substrate, the temperature rise from the heating section, substrate, and equipment walls causes severe degassing, which limits the gas pressure and atmospheric conditions during production, resulting in a decline in the quality of the produced film. occurs. Furthermore, when using a substrate drive mechanism such as a planetary device, problems arise in the design of the device, such as the heat resistance of the rotating mechanism and the capacity of the heating device (infrared heating, etc.), making stable operation difficult.
On the other hand, the PVD method according to the present invention can eliminate the warping of the produced film due to residual stress at a low substrate temperature of around 400° C., thereby eliminating the drawbacks of the conventional method described above. Furthermore, to explain the mechanism that can prevent warping of the film produced by the PVD method of the present invention, for example, when a film is produced on a substrate by vacuum evaporation, the substrate is Radiant heat from the source, heat conduction from the evaporated particles, heat of reaction between the evaporated particles and the substrate or coating, etc. are transmitted, which causes temperature changes over time. At this time,
The surface of the substrate or generated film on which the evaporated particles re-solidify is greatly influenced by radiant heat, conduction heat from the evaporated particles, and continues to undergo thermal expansion. When evaporated particles adhere to such a surface, the film-forming surface expands with thermal expansion and receives more evaporated particles.
After the film is deposited under these conditions,
As the temperature decreases, shrinkage occurs, resulting in a difference in shrinkage in the thickness direction within the produced film. That is, the expansion-contraction force of the film at the initial stage of vapor deposition is large, and this stress becomes small at the end of vapor deposition. The film is curved due to such a stress difference inside the produced film, and if the substrate is thin, the film is curved in the direction in which the stress of the film and the stress of the substrate are added. The inventors discovered that the curved shape of the substrate is different from the curved shape of the produced film itself, and based on this idea, by controlling the substrate temperature so that it is the same as the surface on which the film is formed, the film can be formed. It has been achieved that it is possible to prevent the curvature (curl) of the material. in this case,
The rate of decrease in substrate temperature during generation varies depending on the substrate material, evaporation material, amount of radiant heat from the evaporation source, etc.
Although it is difficult to make a general determination, qualitatively better results can be obtained when the temperature gradient is in a decreasing state.
That is, the basis of the PVD method according to the present invention is not to increase the substrate temperature during vapor deposition. but,
During deposition, the substrate receives radiant heat from the deposition source, so the temperature of the substrate increases with the deposition time. Therefore, since the required minimum temperature for heating the substrate is determined by the amount of radiant heat from the evaporation source, the distance between the evaporation source and the substrate, and the evaporation time, consideration must be given to this point when setting the conditions.

以下、本発明のスピーカ用振動板の製造方法に
ついて実施例にもとづき詳細に説明する。
Hereinafter, a method for manufacturing a speaker diaphragm according to the present invention will be described in detail based on Examples.

実施例 1 まず、第1図に示すようにアルミリボン11を
編んで菊形の中空コア材よりなる心材12を作成
し、この心材12の両面に厚さ20μmの純ボロン
スキン材13を温度200〜230℃、圧力1〜2Kg/
cm2の条件で接着剤により熱圧着し、直径28mm、厚
さ約1mmの平板振動板14を作成した。この時、
ボロンスキン材13は真空蒸着装置を用い、電子
ビーム蒸着法により作成した。真空蒸着装置は第
2図に示すように排気系7を備えるベルジヤー6
内に加熱装置2上に設けた基板1と蒸発源3を入
れたルツボ8を対向させて配置し、このルツボ8
に近接して電子ビーム加熱装置5を配置したもの
であり、上記基板1の温度計測のための熱電対4
を備えたものである。そして、真空蒸着装置を1
〜3×1015Torr迄排気し、基板加熱装置2で基
板1を第3図の曲線Aに示すように420℃迄加熱
した後に約10℃/minの速度で基板温度を連続的
に下げながら電子ビーム蒸着法により、電子ビー
ム電力12KW、25分間の条件で蒸着源3としての
ボロンを蒸着し、基板1としてのチタン基板上に
厚さ20μmのボロン層を生成した。前記基板1に
は厚さ50μmのチタン箔を用い、その表面を直径
28mmの穴(振動板の径に相当)を開けたマスク材
で覆い、チタン基板上には直径28mm、厚さ20μm
のボロン膜を生成させた。ボロン膜の生成後、チ
タン基板を0.5〜1%の濃度のフツ酸溶液で溶解
除去して直径28mm、厚さ20μmのボロンスキン材
13を作製した。
Example 1 First, as shown in FIG. 1, a core material 12 made of a chrysanthemum-shaped hollow core material is created by knitting an aluminum ribbon 11, and a pure boron skin material 13 with a thickness of 20 μm is placed on both sides of the core material 12 at a temperature of 200 μm. ~230℃, pressure 1~2Kg/
A flat diaphragm 14 having a diameter of 28 mm and a thickness of about 1 mm was produced by thermocompression bonding with an adhesive under conditions of cm 2 . At this time,
The boron skin material 13 was created by electron beam evaporation using a vacuum evaporation device. The vacuum evaporation apparatus is a bell jar 6 equipped with an exhaust system 7 as shown in FIG.
A crucible 8 containing a substrate 1 provided on a heating device 2 and an evaporation source 3 is placed facing each other in the crucible 8.
An electron beam heating device 5 is disposed adjacent to the substrate 1, and a thermocouple 4 for measuring the temperature of the substrate 1 is provided.
It is equipped with the following. Then, set the vacuum evaporation equipment to 1
After exhausting the air to ~3×10 15 Torr and heating the substrate 1 to 420°C as shown in curve A in Figure 3 using the substrate heating device 2, the substrate temperature was continuously lowered at a rate of about 10°C/min. By electron beam evaporation, boron as the evaporation source 3 was evaporated under conditions of an electron beam power of 12 KW for 25 minutes to form a 20 μm thick boron layer on a titanium substrate as the substrate 1. The substrate 1 is made of titanium foil with a thickness of 50 μm, and its surface is
Cover with a mask material with a 28 mm hole (equivalent to the diameter of the diaphragm), and a hole of 28 mm in diameter and 20 μm in thickness is placed on the titanium substrate.
produced a boron film. After the boron film was formed, the titanium substrate was dissolved and removed with a hydrofluoric acid solution having a concentration of 0.5 to 1% to produce a boron skin material 13 having a diameter of 28 mm and a thickness of 20 μm.

このように構成したスピーカ用振動板では、平
坦で反りのないボロンスキン材13を得ることが
できるので、心材12への接着剤による熱圧着が
できる利点を有し、その周波数特性を第4図の実
線に示す。第4図中、aは本実施例のスピーカ用
振動板の音圧周波数特性、bはその2次高調波歪
特性を示している。
The speaker diaphragm constructed in this way has the advantage that it is possible to obtain a flat and unwarped boron skin material 13, so it can be bonded to the core material 12 by thermocompression using an adhesive, and its frequency characteristics are shown in Figure 4. It is shown by the solid line. In FIG. 4, a indicates the sound pressure frequency characteristic of the speaker diaphragm of this embodiment, and b indicates its second harmonic distortion characteristic.

比較例 1 アルミリボンを菊形状に編んだ中空コアよりな
る心材の両面に厚さ20μmの純ボロンスキン材を
温度200〜230℃、圧力1〜2Kg/cm2の条件で熱圧
着し、直径28mm、圧さ約1mmの平板振動板を作製
した。この時、ボロンスキン材は第2図に示した
真空蒸着装置を用いて1〜3×10-5Torr迄排気
し、基板加熱装置で基板を420℃迄加熱し、電子
ビーム蒸着法により、電子ビーム電力12KW、25
分間の条件でボロンを蒸着し、チタン基板上に厚
さ20μmのボロン層を生成した。この時の基板表
面温度は第3図の曲線Bのように変化した。前記
基板には厚さ50μmのチタン箔を用い、その表面
を直径28mmの穴(振動板の径に相当)を開けたマ
スク材で覆い、チタン基板上には直径28mm、厚さ
20μmのボロン膜を生成した。ボロン膜の生成
後、チタン基板を0.5〜1%の濃度のフツ酸溶液
で溶解除去して直径28mm、厚さ20μmのボロンス
キン材を作製した。
Comparative Example 1 Pure boron skin material with a thickness of 20 μm was thermocompression bonded to both sides of a core material consisting of a hollow core made of aluminum ribbon woven into a chrysanthemum shape at a temperature of 200 to 230°C and a pressure of 1 to 2 kg/cm 2 to form a material with a diameter of 28 mm. A flat plate diaphragm with a thickness of about 1 mm was fabricated. At this time, the boron skin material is evacuated to 1 to 3 x 10 -5 Torr using the vacuum evaporation equipment shown in Figure 2, heated to 420°C using the substrate heating equipment, and then deposited using electron beam evaporation. Beam power 12KW, 25
Boron was deposited under the conditions of 1 minute to form a 20 μm thick boron layer on the titanium substrate. At this time, the substrate surface temperature changed as shown by curve B in FIG. A titanium foil with a thickness of 50 μm is used for the substrate, and its surface is covered with a mask material with a hole of 28 mm in diameter (corresponding to the diameter of the diaphragm).
A 20μm boron film was produced. After the boron film was formed, the titanium substrate was dissolved and removed using a hydrofluoric acid solution with a concentration of 0.5 to 1% to produce a boron skin material with a diameter of 28 mm and a thickness of 20 μm.

このようなスピーカ用振動板ではスキン材とし
てのボロン膜がその内部応力のために反りを有し
ており、接着剤による心材への熱圧着時に破壊さ
れてしまつた。
In such speaker diaphragms, the boron film serving as the skin material is warped due to its internal stress, and is destroyed when it is thermocompressed to the core material using an adhesive.

比較例 2 アルミリボンを菊形状に編んだ中空コアよりな
る心材の両面に厚さ20μmの純ボロンスキン材を
温度200〜230℃、圧力1〜2Kg/cm2の条件で熱圧
着し、直径28mm、厚さ約1mmの平板振動板を作製
した。この時、ボロンスキン材は第2図に示した
真空蒸着装置を用いて1〜3×10-5Torr迄排気
し基板加熱をせずに電子ビーム(EB)蒸着法に
より、電子ビーム電力12KW、25分間の条件でボ
ロンを蒸着し、チタン基板上に厚さ20μmのボロ
ン層を生成した。この時の基板表面温度は第3図
の曲線Cのように変化した。前記基板には厚さ
50μmのチタン箔を用い、その表面を直径28mmの
穴(振動板の径に相当)を開けたマスク材で覆
い、チタン基板上には直径28mm、厚さ20μmのボ
ロン膜を生成した。ボロン膜の生成後、チタン基
板を0.5〜1%の濃度のフツ酸溶液で溶解除去し
て直径28mm、厚さ20μmのボロンスキン材を作製
した。
Comparative Example 2 Pure boron skin material with a thickness of 20 μm is thermocompressed on both sides of a core material made of a hollow core made of aluminum ribbon woven into a chrysanthemum shape at a temperature of 200 to 230°C and a pressure of 1 to 2 Kg/cm 2 to form a material with a diameter of 28 mm. A flat diaphragm with a thickness of about 1 mm was manufactured. At this time, the boron skin material was evacuated to 1 to 3 x 10 -5 Torr using the vacuum evaporation equipment shown in Fig. 2, and was deposited using an electron beam (EB) evaporation method with an electron beam power of 12 KW without heating the substrate. Boron was deposited for 25 minutes to form a 20 μm thick boron layer on the titanium substrate. At this time, the substrate surface temperature changed as shown by curve C in FIG. The substrate has a thickness
A 50 μm titanium foil was used, and its surface was covered with a mask material with a hole of 28 mm in diameter (equivalent to the diameter of the diaphragm), and a boron film with a diameter of 28 mm and a thickness of 20 μm was formed on the titanium substrate. After the boron film was formed, the titanium substrate was dissolved and removed using a hydrofluoric acid solution with a concentration of 0.5 to 1% to produce a boron skin material with a diameter of 28 mm and a thickness of 20 μm.

このようなスピーカ用振動板ではスキン材とし
てのボロン膜がその内部応力のために反りを有し
ており、接着剤による心材への熱圧着時に破壊さ
れてしまつた。
In such speaker diaphragms, the boron film serving as the skin material is warped due to its internal stress, and is destroyed when it is thermocompressed to the core material using an adhesive.

比較例 3 アルミリボンを菊形状に編んだ中空コアよりな
る心材の両面に厚さ20μmのアルミニウムスキン
材を温度200〜230℃、圧力1〜2Kg/cm2の条件で
熱圧着し、直径28mm、厚さ約1mmの平板振動板を
作製した。このスピーカ用振動板の音圧−周波数
特性を第4図の破線Cに示す。比較例1、2によ
るボロンスキン材は残留応力による反りを生じて
いるため、コアとの接着工程で熱圧着する際に割
れを生じ、振動板として実用化することは不可能
であつたが、本実施例の条件で作製したボロンス
キン材は接着工程でも割れを生じることなく、平
板振動板として用いることができた。また、第4
図に示した本実施例および比較例3より成る平板
振動板の音圧−周波数特性の比較では比較例3の
アルミニウム箔よりなるスキン材を同じ厚さの純
ボロン膜に置きかえるだけで、第一次共振周波数
が12.1KHzから19.3KHz迄上昇し、能率は1.5〜
2dB程度改善された。
Comparative Example 3 Aluminum skin materials with a thickness of 20 μm were thermocompression bonded to both sides of a core material consisting of a hollow core made of aluminum ribbons woven into a chrysanthemum shape at a temperature of 200 to 230°C and a pressure of 1 to 2 Kg/cm 2 to form a material with a diameter of 28 mm. A flat diaphragm with a thickness of approximately 1 mm was manufactured. The sound pressure-frequency characteristics of this speaker diaphragm are shown by broken line C in FIG. Since the boron skin materials according to Comparative Examples 1 and 2 were warped due to residual stress, they cracked during thermocompression bonding with the core, making it impossible to put them into practical use as diaphragms. The boron skin material produced under the conditions of this example did not crack during the bonding process and could be used as a flat diaphragm. Also, the fourth
In comparing the sound pressure-frequency characteristics of the flat plate diaphragms of this example and comparative example 3 shown in the figure, the first The next resonance frequency increases from 12.1KHz to 19.3KHz, and the efficiency is 1.5~
It was improved by about 2dB.

なお、上記の説明ではボロンについて述べた
が、また基板を分離することなく積層体のままで
スキン材として使用することもできることは云う
もでもない。
Although boron was mentioned in the above description, it goes without saying that the laminate can also be used as a skin material without separating the substrates.

以上、詳述したように本発明より成る製造方法
によれば、平坦なボロンスキン材の製造が可能と
なり、高性能なスピーカ用振動板を実現すること
ができる利点を有するものである。
As described above in detail, the manufacturing method of the present invention has the advantage that it is possible to manufacture a flat boron skin material, and it is possible to realize a high-performance speaker diaphragm.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明のスピーカ用振動板の製造工程
を示す説明図、第2図は同振動板のスキン材を得
るための蒸着装置を示す概略構成図、第3図は同
蒸着装置の基板表面温度の特性図、第4図は同振
動板と従来の振動板の音圧−周波数特性の比較図
である。 1……基板、2……加熱装置、3……蒸発源、
4……熱電対、5……電子ビーム加熱装置、6…
…ベルジヤー、7……排気系、12……心材、1
3……スキン材。
Fig. 1 is an explanatory diagram showing the manufacturing process of the speaker diaphragm of the present invention, Fig. 2 is a schematic configuration diagram showing a vapor deposition apparatus for obtaining the skin material of the diaphragm, and Fig. 3 is a substrate of the vapor deposition apparatus. FIG. 4 is a comparison diagram of the sound pressure-frequency characteristics of the same diaphragm and a conventional diaphragm. 1...Substrate, 2...Heating device, 3...Evaporation source,
4...Thermocouple, 5...Electron beam heating device, 6...
... Belgear, 7... Exhaust system, 12... Heartwood, 1
3...Skin material.

Claims (1)

【特許請求の範囲】 1 物理的気相成長法により基板上にボロン層を
生成する際、上記基板の表面温度を降下状態に保
持することにより上記生成したボロン層中の残留
応力を少なくして反りの少ない積層材を得、しか
る後、上記積層材をスキン材として任意形状より
なる中空コアの芯材の表面に接着剤により熱圧着
することを特徴とするスピーカ用振動板の製造方
法。 2 ボロン層を生成した基板を分離してボロンの
みよりなるスキン材を取り出すことを特徴とする
特許請求の範囲第1項記載のスピーカ用振動板の
製造方法。
[Claims] 1. When a boron layer is generated on a substrate by physical vapor deposition, residual stress in the generated boron layer is reduced by maintaining the surface temperature of the substrate in a lowered state. A method for manufacturing a speaker diaphragm, which comprises obtaining a laminated material with little warpage, and then thermocompressing the laminated material as a skin material onto the surface of a core material of a hollow core having an arbitrary shape using an adhesive. 2. The method of manufacturing a speaker diaphragm according to claim 1, characterized in that the substrate on which the boron layer has been formed is separated and a skin material made only of boron is taken out.
JP57042051A 1982-03-16 1982-03-16 Production of speaker diaphragm Granted JPS58159096A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57042051A JPS58159096A (en) 1982-03-16 1982-03-16 Production of speaker diaphragm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57042051A JPS58159096A (en) 1982-03-16 1982-03-16 Production of speaker diaphragm

Publications (2)

Publication Number Publication Date
JPS58159096A JPS58159096A (en) 1983-09-21
JPH0470840B2 true JPH0470840B2 (en) 1992-11-12

Family

ID=12625311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57042051A Granted JPS58159096A (en) 1982-03-16 1982-03-16 Production of speaker diaphragm

Country Status (1)

Country Link
JP (1) JPS58159096A (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5491237A (en) * 1977-12-28 1979-07-19 Nippon Telegr & Teleph Corp <Ntt> Toner image transfer type two color electrostatic recorder
JPS5656095A (en) * 1979-10-12 1981-05-16 Hitachi Ltd Plane loudspeaker
JPS5831799B2 (en) * 1980-07-09 1983-07-08 パイオニア株式会社 Manufacturing method of speaker diaphragm

Also Published As

Publication number Publication date
JPS58159096A (en) 1983-09-21

Similar Documents

Publication Publication Date Title
CN114697820B (en) Vibrating diaphragm, sound generating device and microphone assembly
US4470479A (en) Method of making metal coated foil speaker diaphragm
CN116761117A (en) A loudspeaker diaphragm, preparation method and loudspeaker
KR20140015367A (en) Diffusion-bonded sputtering target assembly and method of manufacturing
JPH0470840B2 (en)
JP2002290182A (en) Method for manufacturing substrate for surface acoustic wave device
JPH0158268B2 (en)
KR102856740B1 (en) Piezoelectric composite substrate and manufacturing method thereof
JPS61244195A (en) Acoustic diaphragm
JPS58159095A (en) Production of speaker diaphragm
JPH0434359B2 (en)
JPS5847118B2 (en) Multilayer diaphragm for acoustic transducer and its manufacturing method
US4996119A (en) Speaker cone plate and method of forming
JPS58159097A (en) Diaphragm for speaker and its production
JPS58170198A (en) Production of speaker diaphragm
CN111510093B (en) Piezoelectric film body for manufacturing bulk acoustic wave device and preparation method thereof
JP3785581B2 (en) Method for producing magnetostrictive thin film
JP3148686B2 (en) Manufacturing method of speaker diaphragm
JPS6424600A (en) Diaphragm for loudspeaker
JPH0468839B2 (en)
JPH045318B2 (en)
CN115724396A (en) A kind of material and its preparation technology for preparing MEMS chip
JPS60186195A (en) Manufacture of diaphragm for electroacoustic transducer
TW202420842A (en) Speaker diaphragm structure with reduced vibration magnitude at resonance frequency and method thereof
CN120301394A (en) High frequency SAW filter based on c-BN/Al1-xScxN laminated structure and preparation method thereof