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JPH047552B2 - - Google Patents
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JPH047552B2 - - Google Patents

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Publication number
JPH047552B2
JPH047552B2 JP58135883A JP13588383A JPH047552B2 JP H047552 B2 JPH047552 B2 JP H047552B2 JP 58135883 A JP58135883 A JP 58135883A JP 13588383 A JP13588383 A JP 13588383A JP H047552 B2 JPH047552 B2 JP H047552B2
Authority
JP
Japan
Prior art keywords
pin
shape memory
female contact
connector
shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58135883A
Other languages
Japanese (ja)
Other versions
JPS6028183A (en
Inventor
Tetsuo Minemura
Hisashi Ando
Isao Ikuta
Yoshiaki Kita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58135883A priority Critical patent/JPS6028183A/en
Publication of JPS6028183A publication Critical patent/JPS6028183A/en
Publication of JPH047552B2 publication Critical patent/JPH047552B2/ja
Granted legal-status Critical Current

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  • Coupling Device And Connection With Printed Circuit (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

〔発明の利用分野〕 本発明は新規なコネクタに係り、特に半導体装
置(LSI)の実装に好適な多ピン電気コネクタに
関する。 〔発明の背景〕 ピンコネクタはピンとそれが挿入されるソケツ
ト及びそれらをパツケージする部分から成り、電
気・電子接続部品として広く使用されている。ま
た、コンピユータの高密度化に伴い、実装技術の
1つとしてこれらコネクタ類の重要性が再確認さ
れつつある。従来のピンコネクタのピン及びソケ
ツト部の形状の一例を第1図に示す。ソケツト部
2はほとんどが主にCu−Be合金からなるバネ材
によつてできており、挿入されたピン1をソケツ
ト部2のバネ力で接続する構造になつている。こ
のソケツト部2はいずれもピン挿入方向に平行に
配置され、ピン1はそのバネ材(あるいは円筒)
の間にはさみ込まれる構造になつている。近年、
電気、電子部品の高集積化、コンピユータの高密
度化が進むにつれ、これらコネクタのコンパクト
化、マイクロ化が要求されるようになつてきた。
これら要求に対し従来のソケツト形状では、ピン
挿入方向に沿つてある程度の高さが必要であるた
め、ソケツトパツケージの肉厚が厚くなり、コン
パクト化に際し大きな問題となる。また、ソケツ
ト形状が複雑なためコネクタのマイクロ化に際し
その加工が困難なことからその形状の単純化が必
要となつている。 一方、コンピユータの高密度化としてコネクタ
の多ピン化がある。すなわち、一度に挿入される
ピン数が多くなるためコネクタを接合する際の力
が急激に増大しており、ピン数が多くなると従来
の構造のバネ力によるコネクタでは人間の力によ
る接合が不可能になることが予想される。そこで
ピン挿入又は抜去時には小さい力ででき、接合時
には信頼性のある接合が得られる低挿入力または
零挿入力コネクタの開発が進められている。 特開昭57−185680号公報には、平板上のバネ部
材の中央部に穴を設け、その穴部に雄接触子を挿
入するものがある。しかし、このものは抜去が非
常に困難である。 特開昭58−71572号公報、同58−73973号公報に
はバイメタルの温度変化による変形によつて極低
温下で動作するジヨセフソン素子半導体装置の電
気コネクタが示されている。しかし、これらのバ
イメタルによる電気コネクタは所定の大きさがな
ければ大きな変形が得られないので、小型にでき
ない。 第1図aのソケツトを形状記憶合金で構成した
電気コネクタが金属便覧(改訂4版、昭和57年12
月発行)に示されているが、これでは小型化でき
ない。 〔発明の目的〕 本発明の目的は、低挿入力で挿入でき、かつ小
型にできるコネクタを提供するにある。 〔発明の概要〕 (発明の要点) 本発明は、雌接触子と、雌接触子に挿入する雄
接触子とを有するコネクタに関するものであつ
て、雌接触子が、雄接触子を挿入する穴部を有
し、雌接触子は、この穴部の中心方向に伸びた複
数の舌部を有する形状記憶合金からなる。本発明
のコネクタは、形状記憶合金からなる舌部が、形
状記憶合金の変態温度以上で雄接触子に対して圧
力を加えるように形状を記憶することを特徴と
し、そして、少なくとも一つの舌部とこの舌部に
対向する少なくとも一つの舌部との間隔が、雄接
触子の長手方向の断面における長さよりも小さ
く、複数の舌部は雄接触子を挿入後、舌部の形状
記憶を回復し、雄接触子と電気的、機械的に接合
することを特徴とする。 形状記憶合金として、Al0〜10%、Zn10〜40%
を含むCu合金、Sn23〜26%を含むCu合金、Al12
〜15%、Ni3〜5%を含むCu合金、Ti42〜48%
と残部Niからなる合金等が一般に知られている。
その他Fe−Mn系、Fe−Cr−Ni系、U−Mo系、
Mn−Cu系、Au−Cd系など使用可能である。 表は、一例としてCu−Al−Ni合金及びNi−Ti
合金の組成(重量%)及び特性を示す。これらの
合金は、Mf点以下の温度での最終形状及びAf点
以上の温度での最終形状に形状記憶されることが
できるので、これらの温度サイクルを
[Field of Application of the Invention] The present invention relates to a novel connector, and particularly to a multi-pin electrical connector suitable for mounting semiconductor devices (LSI). [Background of the Invention] Pin connectors consist of pins, sockets into which they are inserted, and parts that package them, and are widely used as electrical and electronic connecting parts. Furthermore, as computers become more densely packed, the importance of these connectors as one of the mounting techniques is being reconfirmed. An example of the shape of the pin and socket portion of a conventional pin connector is shown in FIG. The socket part 2 is mostly made of a spring material mainly made of Cu-Be alloy, and has a structure in which the inserted pin 1 is connected by the spring force of the socket part 2. Both socket parts 2 are arranged parallel to the pin insertion direction, and the pin 1 is connected to its spring material (or cylinder).
It has a structure that is sandwiched between the two. recent years,
As electrical and electronic components become more highly integrated and computers become more densely packed, there is a growing demand for these connectors to be more compact and micronized.
In order to meet these requirements, conventional socket shapes require a certain amount of height along the pin insertion direction, which increases the wall thickness of the socket package, which poses a major problem in making it more compact. Furthermore, since the shape of the socket is complex, it is difficult to process it when micronizing the connector, so it is necessary to simplify the shape. On the other hand, as the density of computers increases, the number of pins in connectors increases. In other words, as the number of pins inserted at once increases, the force required to join the connectors increases rapidly, and as the number of pins increases, it becomes impossible to join the connectors using human force using conventional spring-forced connectors. It is expected that Therefore, efforts are being made to develop low-insertion-force or zero-insertion-force connectors that require less force when inserting or removing pins and can provide reliable connections when joining. Japanese Patent Application Laid-Open No. 57-185680 discloses a device in which a hole is provided in the center of a spring member on a flat plate, and a male contact is inserted into the hole. However, this one is very difficult to remove. JP-A-58-71572 and JP-A-58-73973 disclose electrical connectors for Josephson element semiconductor devices that operate at extremely low temperatures due to the deformation of bimetals due to temperature changes. However, these bimetallic electrical connectors cannot be made large in size unless they have a predetermined size, so they cannot be made smaller. The electrical connector in which the socket shown in Figure 1a is made of a shape memory alloy is used in the Metal Handbook (revised 4th edition, December 1982).
However, this method does not allow miniaturization. [Object of the Invention] An object of the present invention is to provide a connector that can be inserted with low insertion force and that can be made compact. [Summary of the Invention] (Summary of the Invention) The present invention relates to a connector having a female contact and a male contact inserted into the female contact, wherein the female contact has a hole into which the male contact is inserted. The female contact is made of a shape memory alloy having a plurality of tongues extending toward the center of the hole. The connector of the present invention is characterized in that the tongue portion made of a shape memory alloy memorizes its shape so as to apply pressure to the male contact at a temperature equal to or higher than the transformation temperature of the shape memory alloy, and at least one tongue portion The distance between the tongue and at least one opposing tongue is smaller than the length of the male contact in the longitudinal cross section, and the plurality of tongues recovers the shape memory of the tongue after the male contact is inserted. It is characterized by being electrically and mechanically connected to a male contact. As shape memory alloy, Al0~10%, Zn10~40%
Cu alloy containing Sn23~26%, Al12
~15%, Cu alloy containing 3~5% Ni, 42~48% Ti
An alloy consisting of Ni and the balance Ni is generally known.
Other Fe-Mn series, Fe-Cr-Ni series, U-Mo series,
Mn-Cu type, Au-Cd type, etc. can be used. The table shows Cu-Al-Ni alloy and Ni-Ti alloy as an example.
The composition (wt%) and properties of the alloy are shown. These temperature cycles are important because these alloys can be shape memorized to a final shape at temperatures below the Mf point and a final shape at temperatures above the Af point.

〔発明の実施例〕[Embodiments of the invention]

実施例 1 第2図は本発明の電気コネクタの断面図であ
る。この電気コネクタは雄接触子としてピン1の
挿入方向4(雌接触子2の肉厚方向)の構造を平
板状として単純化し、さらにコンパクト化及びマ
イクロ化に際し加工成形が容易なものである。絶
縁基板3のピン挿入用穴部6にピン挿入方向4に
対して薄板状あるいは薄膜状の雌接触子2を直角
に配することを特徴とする。この雌接触子2は形
状記憶合金からなる。ピン1はピン挿入穴部6上
に形成されるピン接合用雌接触子にはスリツト状
などのすき間が形成されており、その部分に押し
込まれる。ピンは母相変態温度以上又はマルテン
サイト変態温度以下で、バネ力によつてピンの接
合力が働くように形状記憶されている。雌接触子
2は基板3のピン挿入穴部6に接着などの方法で
固着される。この構造は肉厚方向の厚さを従来に
比べ薄くでき、コネクタのコンパクト化に有効で
ある。さらにこの構造の雌接触子2が基板上に平
面的に設けられるためPVD法(蒸着、スパツタ
法等)、CVD法、溶湯急冷法及び溶射などの気相
あるいは液相から直接成形する方法により製造及
び基板への一体成形が可能である。雌接触子とな
る薄板あるいは薄膜を接着または形成して、これ
をフオトリソグラフイ、化学エツチング等により
所定の形状に一体成形が可能である。以上の利点
は、多ピンコネクタにおいて一度に多ピン接合部
を成形でき、また、微細加工も容易であることか
らコネクタのマイクロ化に際し非常に有効であ
る。 本発明のコネクタ構造において雌接触子に熱弾
性型マルテンサイト変態による形状記憶合金を適
用すると次のような効果がある。形状記憶合金と
しては一般にCu−Al−Zn、Cu−Al−Ni及びTi
−Ni合金が知られているが、これはいずれも圧
延、成形など加工が難しい材料である。第3図及
び第4図は形状記憶合金を絶縁基板3に形成した
コネクタの接合プロセスの工程を示す断面図であ
る。形状記憶効果にはいくつかの種類のあること
が知られているが、第3図は一方向形状記憶効果
を、第4図は二方向形状記憶効果をそれぞれ利用
したものである。いずれの場合も形状記憶合金の
マルテンサイト変態温度がコネクタの動作温度
(一般には室温)以下のものを使用する。第3図
aは形状記憶合金からなる雌接触子2を動作温度
と平らな状態を記憶させたもの、bはそれをマル
テンサイト変態温度以下に下げた状態である。こ
の状態で合金はマルテンサイト変態し、それに伴
い形状は変化しないが、非常に軟かな状態とな
る。cはこの軟かな状態でピン1を挿入し、dで
動作温度に戻すとマルテンサイトは元の母相に戻
りそれに伴い合金が硬化し、形状記憶効果によつ
て元の形状(a状態)に戻ろうとする力が働く。
それに伴い挿入されたピン1に大きな接合力が付
与される。これらの結果から、形状記憶効果を用
いると低挿入力ピンコネクタが実現できる。 第4図はaとb状態における変態に伴う可逆的
形状記憶をさせた状態によるものである。コネク
タの動作温度状態ではaの状態になるように形状
記憶させ、次にマルテンサイト変態温度以下でb
の状態になるように形状記憶させる。マルテンサ
イト変態温度まで冷却すると形状記憶効果によつ
て特にスリツト状に形成されたピン挿入穴部5′
のすき間が開く。そこにcのようにピンを挿入
し、dに示すように動作温度状態に戻すと形状記
憶効果によつて合金は母相状態に戻り硬くなると
ともにa状態に戻るので、雌接触子とピンとに接
合力が負荷される。これをeに示すようにもう一
度マルテンサイト変態温度以下の状態まで冷却す
るとピン挿入穴部が開き、ピンを容易に抜くこと
ができる。このように二方向形状記憶効果を本発
明コネクタ構造に適用するとほぼ零挿入抜去力の
電気コネクタが実現できる。形状記憶合金は前述
のように加工が難しいため、従来のソケツト形状
でマイクロ化しようとしても形状が複雑なため加
工が困難である。それに比べ、本発明の構造は単
純であるのでこのような難加工材で形状記憶合金
の適用が容易であり、本発明の大きな利点とな
る。 実施例 2 本実施例では、雌接触子の形状加工を検討し
た。雌接触子としては板厚0.08mmのCu−Be合金
からなるバネ材(JISC1700)及び形状記憶合金
として前述の表に示すCu−Al−Ni系並びにNi−
Ti系合金の溶湯急冷リボン材を用いた。この急
冷材は双ロール型急冷装置により作製したもので
厚さ0.06〜0.09mm幅5〜10mmの薄板である。製造
条件は、ノズルとして0.8〜1.0mmφの丸孔付石英
製ノズルを用い、周速約10m/sのCu−Be製ロ
ール(直径120mm)間に高圧Arガス(圧力1.0〜
1.5Kg/cm2)で溶湯を噴出して急冷凝固させた。
表中の諸特性は室温において測定したものであ
る。 第5図は前記合金薄板によつて雌接触子2とし
て外形を円形に加工した4種類の平面形状を示す
平面図である。a及びbは雄接触子断面が円形の
場合、c,dが矩形の場合である。これら加工に
は、ワイヤによる放電加工、化学エツチング及び
打抜を試みた。ワイヤによる放電加工では、最初
にワイヤを通す穴をドリルで加工した。ドリル径
は最小0.1mm径まで加工が可能であつた。ワイヤ
には最小0.1mm直径の銅線又は0.05mm直径のタン
グステン線を使用した。その結果、スリツト7の
幅は0.1mmまで可能であつた。また、化学エツチ
ングでは、写真フイルムに焼付けたスリツト形状
を、光硬化性樹脂を表面にぬつたリボンに重ね感
硬させ末感光のスリツト部表面の樹脂だけで洗浄
しておとす。その結果、スリツト部のみが樹脂に
より被覆されない状態となる。これを塩化第2鉄
溶液中に浸漬してエツチングした結果、やはり、
スリツト7の幅を0.1mmまで加工が可能であつた。
打抜きはSKD11のダイス鋼製金型によりクリ
アランスがゼロの状態で打抜いた。この方法によ
つてもスリツト幅を最小0.1mmまで加工すること
が可能であつた。 このように加工した雌接触子にピンを挿入して
接合力を評価した。雌接触子形状は第5図a,b
の場合としてスリツト7の長さ3mm、幅0.2mm中
央部穴部5の直径0.5mmのもの、またc,dでは
矩形の一辺が3mm、スリツト7の幅0.2mmのもの
である(dの場合、中央のスリツト7の長さを
1.5mmとした)。ピン形状は前者のa,bの雌接触
子に対しては直径0.8mmの棒状、後者のc,dに
対しては0.4mm×1mmの矩形の棒状のものを使用
した。雌接触子は動作状態で平らになるように形
状記憶させ、ピンを液体窒素中にて挿入した。な
お、上述のCu−14%Al−4%Ni合金薄板にスリ
ツト加工したものを液体窒素中で変形させた後の
温度の上昇に伴う形状記憶効果による形状回復を
光学顕微鏡により連続的観察した。液体窒素中で
直径1.5mmのピンによつて第4図bのように開い
た状態に変形させ、次いでこれを室温に戻した結
果、室温での形状はほぼ完全に元に回復してい
た。以上のような条件で接合した場合これらの引
抜力はa,bで200g、c,dで150gであつた。
この力は材質によつてあまり大きな差は見られな
かつた。また、ピン接触部での接触抵抗は10mΩ
以上であつた。 第6図はピンコネクタを接合後、抜去を容易に
するための構造にしたスリツトの平面形状を示す
平面図である。aは第5図bの3ケのスリツト7
を1ケにして扇型形状のスリツト7及びbは第5
図cの矩形の下半分を取りのぞいた形状である。
図中の斜線部8にピンを挿入し抜去時には矢印の
方向にスライドさせ接合状態から解放した状態で
引き抜く。bの形状を立体的に示したのが第7図
である。スライドする力は接合力の約1/10程度で
あり容易に引抜くことができる。また、形状記憶
合金では液体窒素温度下でスライドした場合材料
が軟かくなつているため約1/50以下の力でスライ
ドが可能であつた。 形状記憶合金を雌接触子に適用した場合の二方
向形状記憶効果によるピンの挿入、抜去を試み
た。スリツト形状は第5図a及びcである。二方
向形状記憶させるため最初に2mmφあるいは1.2
×1mm矩形のピンを液体窒素温度下で挿入して強
加工する。これを2〜3回くり返して形状記憶さ
せた。この雌接触子に前記条件のピンを挿入した
ところ挿入、抜去時にはピンと接合部にすき間が
できるためそれに必要な力はゼロであつた。接合
時には引抜力として150gまで耐えることが分か
り、低挿入力コネクタが得られることを確認し
た。 実施例 3 本実施例では前記実施例2で加工した雌接触子
をピン挿入用穴部を有する基板に固定する方法に
ついて検討した。雌接触子の材質は前記実施例2
と同等であり、基板材質としてガラスエポキシ樹
脂、エポキシ樹脂及びアルミナ板を使用した。こ
れら基板の穴などの加工は前者は一般ドリルで、
後者はCO2レーザでそれぞれ行なつた。まず、接
着による固定方法を検討した。第8図は接着の方
式が異なる雌接触子の断面図である。aは基板上
に単純に接着剤9によつて固定する方法である。
一般には接着強度が足りればどんな接着剤でもよ
いが、形状記憶合金を使用とした時は室温と液体
窒素までの熱サイクルに耐えなければならない。
そのため、一般の有機接着剤ではこのサイクルに
耐えない。これに耐えるのはアルミナ又はジルコ
ニアと水ガラスなどからなる無機系接着剤であ
る。さらに銀ペーストも十分乾燥させることによ
り、はくり強度が150g程度と十分な接着強度が
得られた。基板がアルミナの場合500〜600℃で
1h焼成すると接着強度はさらに50%程度向上す
る。第8図bは基板がセラミツクスの場合熱サイ
クルに耐える接着として基板上にメタライズ後メ
ツキ層10を設けた後ろう材11によつて接着す
る方法である。本実施例ではMo−Mnペースト
により1100℃で1hメタライズし、Niメツキを施
した後銀ろうにより接着した。いずれの合金もは
くり強度300g以上の良好な接着が得られた。 このようなろう付接着及び前記実施例の化学エ
ツチングを用い雌接触子をピン挿入用穴部を有す
る基板上の穴部への直接成形を試みた。ろう材と
して、インジウムはんだ、銀ろう、鉛はんだ等が
用いられる。その工程を示す斜視図を第9図に示
す。aは穴6のあいたアルミナ基板3を示し、そ
の上に、bの如く雌接触子となる重量でCu−14
%Al−4%Ni合金の薄板12を前記ろう付で接
着し、これをcに示すように前記化学エツチング
により穴周囲に雌接触子となるところを残してエ
ツチングした。この状態でさらにマスキングを替
え、ピン接合部スリツトをエツチングして成形し
た。この工程が可能なことから多数のピンに対応
する多数の雌接触子を一度に製造することが可能
であることが分つた。 固定方法の他の例として第10図に示すように
雌接触子を2枚の基板間にはさむ方式を検討し
た。aは上下の基板のピン挿入用穴径が同じも
の、bは上下の穴径をピン径より若干大きくして
その穴をピンのガイトとして働かすもの、cは上
下基板を完全に密着させるため下の基板に溝をも
うけ、そこに雌接触子を配置したものをそれぞれ
示している。これらは前記接着法に比べ構造はや
や複雑になるが、固定強度の信頼性が大きい。ま
た、第8図aのように簡単に接着した後上部から
基板ではさむことにより、熱サイクルにも耐える
固定が実現した。この固定方式を適用したピンコ
ネクタの斜視図を第11図及び第12図に示す。
第11図は第10図bの方式、第12図は同じく
cの方式を採用したものでピン数は30ピン、ピン
とピンとの間のピツチ間隔は2インチのものであ
る。ピンは直径0.8mmの丸形で雌接触子のスリツ
ト形状は長さ3mmで、第5図bの形状である。基
板はアクリル樹脂である。第11図は基板をネジ
18によつて固定したもの、第12図は下の基板
17の両端に上の基板15を挿入し、固定するガ
イド溝16を設け、矢印のように上部基板を横か
らさしこむような構造となつている。第11図の
場合、雌接触子の位置を固定するために下部基板
上に簡単な接着により固定する必要があるが、第
12図の場合、下部基板上の溝に置くだけで位置
が固定されるため、1ピンだけの接合部が破損な
どの不具合があつてもすぐに交換が可能であると
いう利点がある。 実施例 4 Cu−Ni−Al系形状記憶合金をスパツタ法によ
り種々のピン挿入用穴部を有する絶縁基板上に
Cu、Al箔を載置し、その上に積層複合化した。
合金の組成としてCu−4%Ni−14%Al(重量)
とし、無酸素銅(JIS1種)、電解Ni(純度99.5%)
及びAl(純度99.8%)を配合し真空中(10-5
10-4Torr)にて1チヤージ2.5Kgを高周波溶解し、
これを直径95mmの金型に鋳込んだ。得られたイン
ゴツトから直径90mm、厚さ5mmの円板を機械加工
により切り出し、スパツタ用ターゲツトとした。
スパツタ装置には2極DC−マグネトロン型を用
いた。装置の容器内を3×10-7Torrの真空にし
た後、Arを30μmHgの圧力まで導入して電極間
距離60mm、Ar分圧5mTorr、電力200Wのスパ
ツタ条件でCu箔、Al箔(いずれも厚さ20μm)の
片側にデポジツトした。これらの基板上にデポジ
ツトした際のスパツタ膜厚のスパツタ時間の依存
性は時間と共にほぼ直線的に増加し、4.5hで50μ
m近くまで積層でき、その積層したままの状態で
良好にAl箔に密着していた。Cu箔上においても
ほぼ同様のスパツタ膜厚の時間依存性及び密着性
の高い膜が得られた。これらスパツタ膜のマルテ
ンサイト変態開始温度(Ms)は四端子電気抵抗
測定の結果、−123℃であつた。従つて、この形状
記憶合金は、液体窒素と室温の間で顕著な形状記
憶効果を示し、それらの温度間で動作させる部材
に用いることができる。 急冷した組織を走査電子顕微鏡で観察すると表
面で直径約2〜3μmの微細結晶層となり曲げ変
形に対して粒界への応力集中を緩和するため曲げ
延性が向上した。 このようにAl及びCu箔上に形状記憶合金をデ
ポジツトした基板を第10図に示す化学エツチン
グによる工程で雌接触子を製造した。厚さ50μm
のAl箔との複合体では約2μm以上、同じくCu箔
との複合体では約4μm以上の厚さの形状記憶合
金を積層させることにより良好な形状記憶効果が
認められ、また互いに密着した複合体が形成され
ていた。 本実施例では、外径1mm、中央部穴部5の直径
0.5mm、スリツト7の長さ3mm、幅0.2mmのものを
化学エツチングにより製造した。このものを液体
窒素中にて直径0.8mmのピンを挿入し、中央部穴
部5をより大きく開口する曲げの強加工を施し、
次いで室温に戻したが、雌接触子の接触部は元の
平らな状態に戻ることが確認された。次にこのも
のを再び液体窒素中に入れ、同様にピンを挿入し
たが全く抵抗なく挿入でき、それを室温に戻し、
その引抜力は約100gであり、零挿入力コネクタ
が得られる。 実施例 5 本実施例では、雄接触子としてピンを形状記憶
合金によつて製造した例を示す。形状記憶合金と
して前述の表のCu−Al−Ni合金の溶湯を直径
120mmのBe含有Cu基合金製ロール表面に高圧Ar
ガスによつて石英製ノズルより噴射して直径約
0.5mmの細線を急冷凝固させ、製造した。この細
線の特性は前述の表とほゞ同じである。この細線
を用いて第1図aの形状のピンを母相変態温度以
上で塑性加工によつて雌接触子との接触部分を曲
げて“く”の字状にした。次いでこのものを液体
窒素中でその接触部分がストレートになるように
塑性加工した。このようにして得られたピンを第
1図aに示す雌接触子に液体窒素中で挿入し、次
いで母相変態温度以上である動作温度にした結
果、前述の“く”の字状に曲がり、ピンと雌接触
子とは互いに電気的に接続することが確認され
た。このものの引抜力は雌接触子に形状記憶合金
を用いたものに比較し、小さいものであつた。な
お、液体窒素中での挿入に際し、予めストレート
に変形なせなくても軟いマルテンサイト状態にあ
るので、低挿入力により挿入が可能である。 実施例 6 本実施例はLSI実装に適用した例を示す。第1
3図は本発明の電気コネクタが使用されたLSIパ
ツケージ19,19′を実装したプリント回路用
基板22の斜視図である。LSI19,19′はセ
ラミツク多層印刷配線基板20に半田付され、更
に本発明のコネクタ21に接続されている。本発
明のコネクタはプリント回路用基板22に半田2
5によつて接合されている。 第14図はプリント回路用基板22に本発明の
コネクタを載置し、そのコネクタに多層印刷配線
基板20を載置した断面の構成図である。本発明
のコネクタはセラミツク絶縁基板15のピン1′
挿入用の穴部6に雌接触子2とプリント回路用基
板22に挿入するピン1″とを電気的に接続する
導電膜23が設けられ、その上部に形状記憶合金
よりなる雌接触子2が上部のセラミツク絶縁基板
14とによつて固定されている。本発明の雌接触
子2は前述のように溶湯急冷、蒸着、スパツタリ
ング等によつて薄膜状に形成され、その薄膜を絶
縁基板に張付け、エツチングによつて前述のよう
に所定の形状にしたものである。 第15図はプリント回路用基板22に本発明の
雌接触子2を形成させ、多層印刷配線基板20を
載置した例の断面図である。プリント回路用基板
22は通常の方法で配線が形成され、そのものに
ピン1′の挿入用穴部に形状記憶合金からなる雌
接触子2が前述と同様に形成される。配線膜24
と雌接触子2とは導電性ペースト等で接合され
る。雌接触子2は樹脂で26の如くコートされ
る。第14図ともにピン1′の挿入は軟かいマル
テンサイト状態で行うのが低挿入力で挿入でき
る。 第14図及び第15図において雌接触子2をス
パツタリング及び蒸着等の気相で形成させるには
ピン挿入用穴部を塞ぐ必要があるので、金属の箔
膜を絶縁基板3又はプリント回路用基板22の上
に固着し、その上に形状記憶合金を形成させ、エ
ツチングによつて所望の形状にする。 第16図は同じくLSI実装用に適用した本発明
の電気コネクタの他の例を示す断面図である。絶
縁基板3の両面に形状記憶合金からなる雌接触子
2,2′を設けた構造である。雌接触子2,2′は
互いに電気的に接続するように導電膜23が設け
られており、雌接触子2には多層印刷配線基板2
0及び2′にはプリント回路用基板22に設けら
れたピン1〓が挿入される。雌接触子を構成する
薄膜は前述と同様に種々の方法で製造できるが、
スパツタリング、蒸着等の気相で形状記憶合金を
形成させるには前述と同様にピン挿入用穴部を金
属箔で塞いで行うことができる。 本実施例によれば軟かいマルテンサイト状態、
或いは低温で雌接触子の穴部の空間が大きく広が
るように形状記憶させることにより低挿入力によ
る挿入ができ、かつエツチング技術によつて製造
が可能なのでマイクロ化が可能となり、かつ一体
成形による生産性の高い電気コネクタが得られ
る。 第17図は多層印刷配線基板20に本発明の形
状記憶合金を使用したコネクタ2を設けたLSI実
装構造を示す断面図である。多層印刷配線基板2
0への薄膜コネクタ2は前述と同様に形状記憶合
金を溶湯急冷によつて製造した薄帯を使用するも
の、蒸着、スパツタリング等の気相で形成させる
方法等によつて通常の方法で製造した多層印刷配
線基板上に導通させて直接薄膜を形成させ、エツ
チング技術によつて所望の形状に形成させること
ができる。 発明の効果 本発明によれば、低挿入力で挿入でき、かつマ
イクロ化、コンパクト化が可能でしかも一体成形
が可能な電気コネクタが製作できる。
Embodiment 1 FIG. 2 is a sectional view of the electrical connector of the present invention. This electrical connector has a simplified structure in the insertion direction 4 of the pin 1 (thickness direction of the female contact 2) as a male contact in the form of a flat plate, and is easy to process and mold when making it compact and micro. It is characterized in that a female contact 2 in the form of a thin plate or film is disposed in the pin insertion hole 6 of the insulating substrate 3 at right angles to the pin insertion direction 4. This female contact 2 is made of a shape memory alloy. The pin 1 is pushed into a slit-like gap formed in the female contact for pin joining formed on the pin insertion hole 6. The shape of the pin is memorized so that the joining force of the pin is exerted by the spring force at a temperature higher than the matrix transformation temperature or lower than the martensitic transformation temperature. The female contactor 2 is fixed to the pin insertion hole 6 of the substrate 3 by adhesive or other method. This structure allows the thickness in the wall direction to be made thinner than the conventional one, and is effective in making the connector more compact. Furthermore, since the female contact 2 with this structure is provided flatly on the substrate, it can be manufactured by direct molding from a gas phase or liquid phase such as PVD method (vapor deposition, sputtering method, etc.), CVD method, molten metal quenching method, thermal spraying, etc. And it can be integrally molded onto a substrate. It is possible to bond or form a thin plate or film to serve as a female contact and integrally mold this into a predetermined shape by photolithography, chemical etching, or the like. The above-mentioned advantages are very effective in micro-fabrication of connectors because it is possible to mold a multi-pin joint part at one time in a multi-pin connector, and microfabrication is easy. In the connector structure of the present invention, when a shape memory alloy with thermoelastic martensitic transformation is applied to the female contact, the following effects can be obtained. Shape memory alloys are generally Cu-Al-Zn, Cu-Al-Ni and Ti.
-Ni alloys are known, but these are all materials that are difficult to process by rolling or forming. FIGS. 3 and 4 are cross-sectional views showing the process of joining a connector in which a shape memory alloy is formed on an insulating substrate 3. FIG. It is known that there are several types of shape memory effects, and FIG. 3 uses a one-way shape memory effect, and FIG. 4 uses a two-way shape memory effect. In either case, a shape memory alloy whose martensitic transformation temperature is lower than the operating temperature of the connector (generally room temperature) is used. Fig. 3a shows a female contact 2 made of a shape memory alloy whose operating temperature and flat state have been memorized, and Fig. 3b shows a state where it has been lowered to below the martensitic transformation temperature. In this state, the alloy undergoes martensitic transformation, and although the shape does not change accordingly, it becomes very soft. Pin 1 is inserted in this soft state at c, and when the temperature is returned to operating temperature at d, the martensite returns to its original matrix and the alloy hardens accordingly, returning to its original shape (state A) due to the shape memory effect. There is a force trying to return.
Accordingly, a large bonding force is applied to the inserted pin 1. From these results, it is possible to realize a low insertion force pin connector by using the shape memory effect. FIG. 4 shows a state in which reversible shape memory occurs due to transformation in the a and b states. At the operating temperature of the connector, the shape is memorized so that it becomes state a, and then below the martensitic transformation temperature, it becomes state b.
The shape is memorized so that it becomes the state of . When cooled to the martensitic transformation temperature, the pin insertion hole 5' is particularly formed into a slit shape due to the shape memory effect.
A gap opens. When a pin is inserted there as shown in c, and the temperature is returned to the operating temperature state as shown in d, the alloy returns to its matrix state due to the shape memory effect, becomes hard, and returns to state a, so that the female contact and pin Bonding force is applied. When this is cooled again to a state below the martensitic transformation temperature as shown in e, the pin insertion hole opens and the pin can be easily removed. By applying the two-way shape memory effect to the connector structure of the present invention in this way, an electrical connector with almost zero insertion/extraction force can be realized. As mentioned above, shape memory alloys are difficult to process, so even if an attempt is made to micronize a conventional socket shape, the shape is complicated and processing is difficult. In comparison, since the structure of the present invention is simple, shape memory alloys can be easily applied to such difficult-to-process materials, which is a great advantage of the present invention. Example 2 In this example, processing of the shape of the female contactor was investigated. For the female contact, a spring material (JISC1700) made of a Cu-Be alloy with a plate thickness of 0.08 mm, and a Cu-Al-Ni type and Ni-based shape memory alloy shown in the table above are used as the shape memory alloy.
A quenched Ti-based alloy molten ribbon material was used. This quenching material was produced using a twin-roll type quenching device, and was a thin plate with a thickness of 0.06 to 0.09 mm and a width of 5 to 10 mm. The manufacturing conditions were as follows: A quartz nozzle with a round hole of 0.8 to 1.0 mmφ was used as the nozzle, and high pressure Ar gas (pressure 1.0 to
The molten metal was jetted out at a rate of 1.5 kg/cm 2 ) and rapidly solidified.
The properties in the table were measured at room temperature. FIG. 5 is a plan view showing four types of planar shapes in which the outer shape of the female contact 2 is machined into a circular shape using the thin alloy plate. A and b are cases where the cross section of the male contact is circular, and c and d are cases where the cross section is rectangular. For these processes, we tried electrical discharge machining using a wire, chemical etching, and punching. In electrical discharge machining using wires, the holes through which the wires will be passed are first drilled. It was possible to process the drill diameter down to a minimum diameter of 0.1 mm. The wire used was a copper wire with a minimum diameter of 0.1 mm or a tungsten wire with a diameter of 0.05 mm. As a result, the width of the slit 7 could be up to 0.1 mm. In addition, in chemical etching, a slit shape printed on a photographic film is layered with a photocurable resin on a ribbon and cured, and only the resin on the surface of the slit portion after exposure is used to clean it. As a result, only the slit portion is not covered with the resin. As a result of etching this by immersing it in a ferric chloride solution,
It was possible to process the width of slit 7 to 0.1 mm.
The punching was performed using an SKD11 die steel mold with zero clearance. Even with this method, it was possible to process the slit width to a minimum of 0.1 mm. A pin was inserted into the thus processed female contact to evaluate the bonding force. The female contact shape is shown in Figure 5 a and b.
In the case of c and d, one side of the rectangle is 3 mm and the width of the slit 7 is 0.2 mm. , the length of the central slit 7
1.5mm). As for the pin shape, a rod shape with a diameter of 0.8 mm was used for the former female contacts a and b, and a rectangular rod shape with a diameter of 0.4 mm x 1 mm was used for the latter female contacts c and d. The female contact was shaped so that it would be flat in the operating state, and the pin was inserted into liquid nitrogen. Note that the above-mentioned Cu-14%Al-4%Ni alloy thin plate was slit and deformed in liquid nitrogen, and then the shape recovery due to the shape memory effect as the temperature rose was continuously observed using an optical microscope. When it was deformed into the open state as shown in Figure 4b in liquid nitrogen using a pin with a diameter of 1.5 mm, and then returned to room temperature, the shape at room temperature was almost completely restored to its original shape. When joined under the above conditions, the pulling force was 200 g for a and b, and 150 g for c and d.
There was no significant difference in this force depending on the material. Also, the contact resistance at the pin contact part is 10mΩ
That's all. FIG. 6 is a plan view showing the planar shape of a slit designed to facilitate removal of the pin connector after joining. a is the three slits 7 in Fig. 5b
The fan-shaped slits 7 and b are the fifth
This is the shape of the rectangle in Figure c, with the lower half removed.
Insert the pin into the shaded area 8 in the figure, and when removing it, slide it in the direction of the arrow to release it from the bonded state and then pull it out. FIG. 7 shows the shape of b in three dimensions. The sliding force is about 1/10 of the bonding force, and it can be easily pulled out. In addition, when a shape memory alloy was slid under liquid nitrogen temperature, it was possible to slide with about 1/50th the force because the material is soft. An attempt was made to insert and remove a pin using the two-way shape memory effect when a shape memory alloy was applied to the female contact. The slit shapes are shown in Figures 5a and 5c. In order to memorize the shape in two directions, first 2 mmφ or 1.2
A 1mm rectangular pin is inserted under liquid nitrogen temperature and subjected to strong machining. This was repeated 2 to 3 times to memorize the shape. When a pin under the above conditions was inserted into this female contact, the force required for insertion and removal was zero because a gap was created between the pin and the joint. It was found that the connector can withstand up to 150 g of pull-out force during bonding, confirming that a low-insertion-force connector can be obtained. Example 3 In this example, a method of fixing the female contact fabricated in Example 2 to a substrate having a pin insertion hole was investigated. The material of the female contact is the same as in Example 2 above.
, and glass epoxy resin, epoxy resin, and alumina plate were used as the substrate materials. The former uses a general drill to process holes in these boards.
The latter were each performed with a CO 2 laser. First, we investigated a fixing method using adhesive. FIG. 8 is a sectional view of a female contact with a different adhesive method. A is a method of simply fixing onto the substrate with an adhesive 9.
Generally, any adhesive can be used as long as it has sufficient bonding strength, but when a shape memory alloy is used, it must be able to withstand thermal cycles from room temperature to liquid nitrogen.
Therefore, ordinary organic adhesives cannot withstand this cycle. Inorganic adhesives made of alumina or zirconia and water glass can withstand this. Furthermore, by sufficiently drying the silver paste, sufficient adhesion strength was obtained with a peel strength of approximately 150 g. If the substrate is alumina, at 500-600℃
After firing for 1 hour, the adhesive strength increases by about 50%. FIG. 8b shows a method in which, when the substrate is ceramic, a plating layer 10 is provided on the substrate after metallization and then bonded with a brazing filler metal 11 as an adhesive that can withstand thermal cycles. In this example, metallization was performed at 1100° C. for 1 hour using Mo-Mn paste, Ni plating was applied, and then bonding was performed using silver solder. Good adhesion with a peel strength of 300 g or more was obtained for all alloys. Using such brazing adhesion and the chemical etching described in the above embodiment, an attempt was made to directly mold a female contact into a hole on a substrate having a hole for inserting a pin. Indium solder, silver solder, lead solder, etc. are used as the brazing material. A perspective view showing the process is shown in FIG. A shows an alumina substrate 3 with a hole 6, and a Cu-14 plate with a weight that will become a female contact as shown in b is placed on top of the alumina substrate 3.
A thin plate 12 of %Al-4%Ni alloy was bonded by the brazing described above, and this was etched by the chemical etching described above, leaving a portion that would become a female contact around the hole, as shown in c. In this state, the masking was further changed, and the pin joint slit was etched and molded. It has been found that since this process is possible, it is possible to manufacture a large number of female contacts corresponding to a large number of pins at once. As another example of the fixing method, we considered a method in which the female contact is sandwiched between two substrates, as shown in FIG. A is for the upper and lower boards with the same pin insertion hole diameter, b is for the upper and lower holes that are slightly larger than the pin diameter and serves as a guide for the pin, and c is for the lower board to completely fit the upper and lower boards. A groove is formed in the substrate, and a female contact is placed in the groove. These methods have a slightly more complicated structure than the adhesive method described above, but the reliability of the fixing strength is high. In addition, by simply adhering it and then sandwiching it between the substrates from above as shown in Figure 8a, it was possible to achieve fixing that could withstand thermal cycles. A perspective view of a pin connector to which this fixing method is applied is shown in FIGS. 11 and 12.
FIG. 11 shows the method shown in FIG. 10b, and FIG. 12 shows the method shown in FIG. 10c, in which the number of pins is 30 and the pitch between the pins is 2 inches. The pin has a round shape with a diameter of 0.8 mm, and the slit shape of the female contact has a length of 3 mm, as shown in Figure 5b. The substrate is acrylic resin. Figure 11 shows the board fixed with screws 18, and Figure 12 shows the upper board 15 inserted into both ends of the lower board 17, provided with guide grooves 16 for fixing, and horizontally moved the upper board as shown by the arrow. It has a structure that looks like it's inserted from the inside. In the case of Fig. 11, it is necessary to fix the female contact on the lower board with simple adhesive to fix the position, but in the case of Fig. 12, the position can be fixed simply by placing it in the groove on the lower board. Therefore, there is an advantage that even if there is a problem such as damage to a joint with only one pin, it can be replaced immediately. Example 4 A Cu-Ni-Al shape memory alloy was sputtered onto an insulating substrate having various pin insertion holes.
Cu and Al foils were placed and laminated on top of them.
Alloy composition: Cu-4%Ni-14%Al (weight)
Oxygen-free copper (JIS class 1), electrolytic Ni (purity 99.5%)
and Al (purity 99.8%) in vacuum (10 -5 ~
High frequency melting of 2.5 kg per charge at 10 -4 Torr)
This was cast into a mold with a diameter of 95 mm. A disk having a diameter of 90 mm and a thickness of 5 mm was machined from the obtained ingot and used as a sputtering target.
A two-pole DC-magnetron type sputtering device was used. After creating a vacuum of 3 × 10 -7 Torr in the chamber of the device, Ar was introduced to a pressure of 30 μmHg, and Cu foil and Al foil (both The film was deposited on one side with a thickness of 20 μm). The dependence of the sputtered film thickness on the sputtering time when deposited on these substrates increases almost linearly with time, with a thickness of 50μ in 4.5h.
The aluminum foil could be laminated up to nearly m, and the laminated state adhered well to the Al foil. A film with almost the same time dependence of sputtered film thickness and high adhesion was also obtained on Cu foil. The martensitic transformation initiation temperature (Ms) of these sputtered films was -123°C as a result of four-terminal electrical resistance measurement. Therefore, this shape memory alloy exhibits a significant shape memory effect between liquid nitrogen and room temperature, and can be used for members that operate between these temperatures. When the rapidly cooled structure was observed with a scanning electron microscope, a fine crystal layer with a diameter of about 2 to 3 μm was formed on the surface, and the bending ductility was improved because stress concentration at the grain boundaries was alleviated due to bending deformation. A female contact was manufactured using the substrate on which the shape memory alloy was deposited on the Al and Cu foils in the chemical etching process shown in FIG. Thickness 50μm
A good shape memory effect was observed by laminating shape memory alloys with a thickness of approximately 2 μm or more in a composite with Al foil, and approximately 4 μm or more in a composite with Cu foil. was formed. In this embodiment, the outer diameter is 1 mm, and the diameter of the central hole 5 is
A 0.5 mm, slit 7 length of 3 mm and width of 0.2 mm was manufactured by chemical etching. A pin with a diameter of 0.8 mm is inserted into this material in liquid nitrogen, and the central hole 5 is bent to make it larger.
Next, the temperature was returned to room temperature, and it was confirmed that the contact portion of the female contact returned to its original flat state. Next, I put this thing in liquid nitrogen again and inserted the pin in the same way, but it was inserted without any resistance, and I brought it back to room temperature.
Its withdrawal force is approximately 100 g, resulting in a zero insertion force connector. Example 5 This example shows an example in which a pin as a male contact was manufactured from a shape memory alloy. As a shape memory alloy, the diameter of the molten Cu-Al-Ni alloy shown in the table above is
High-pressure Ar applied to the surface of a 120mm Be-containing Cu-based alloy roll.
The gas is injected from a quartz nozzle to a diameter of approx.
A thin wire of 0.5 mm was rapidly solidified and manufactured. The characteristics of this thin wire are almost the same as those shown in the table above. Using this thin wire, a pin having the shape shown in FIG. 1a was plastically worked at a temperature higher than the matrix transformation temperature to bend the contact portion with the female contact into a "dog" shape. This material was then plastically worked in liquid nitrogen so that the contact area was straight. The pin thus obtained was inserted into the female contact shown in FIG. It was confirmed that the pin and the female contact were electrically connected to each other. The pull-out force of this product was smaller than that of a female contact using a shape memory alloy. In addition, when inserting in liquid nitrogen, even if it cannot be deformed straight in advance, it is in a soft martensitic state, so insertion can be performed with low insertion force. Example 6 This example shows an example applied to LSI implementation. 1st
FIG. 3 is a perspective view of a printed circuit board 22 on which LSI packages 19, 19' using the electrical connector of the present invention are mounted. The LSIs 19, 19' are soldered to a ceramic multilayer printed circuit board 20 and further connected to a connector 21 of the present invention. The connector of the present invention has solder 2 on the printed circuit board 22.
5. FIG. 14 is a cross-sectional configuration diagram in which a connector of the present invention is placed on a printed circuit board 22, and a multilayer printed wiring board 20 is placed on the connector. The connector of the present invention has pin 1' of the ceramic insulating substrate 15.
A conductive film 23 is provided in the insertion hole 6 to electrically connect the female contact 2 and the pin 1'' inserted into the printed circuit board 22, and the female contact 2 made of a shape memory alloy is placed on top of the conductive film 23. It is fixed by an upper ceramic insulating substrate 14.The female contact 2 of the present invention is formed into a thin film by quenching a molten metal, vapor deposition, sputtering, etc. as described above, and the thin film is attached to an insulating substrate. , which is etched into a predetermined shape as described above. Fig. 15 shows an example in which a female contactor 2 of the present invention is formed on a printed circuit board 22 and a multilayer printed wiring board 20 is placed on it. It is a sectional view.Wiring is formed on the printed circuit board 22 by a normal method, and the female contact 2 made of a shape memory alloy is formed in the insertion hole of the pin 1' in the same manner as described above.Wiring. membrane 24
and the female contactor 2 are joined with conductive paste or the like. The female contact 2 is coated with resin as shown at 26. In both FIGS. 14A and 14B, the pin 1' can be inserted with a low insertion force if it is in a soft martensite state. In FIGS. 14 and 15, in order to form the female contact 2 in a vapor phase such as sputtering or vapor deposition, it is necessary to close the pin insertion hole, so a metal foil film is placed on the insulating substrate 3 or printed circuit board. 22, a shape memory alloy is formed thereon, and etched into the desired shape. FIG. 16 is a sectional view showing another example of the electrical connector of the present invention similarly applied to LSI mounting. It has a structure in which female contacts 2 and 2' made of a shape memory alloy are provided on both sides of an insulating substrate 3. The female contacts 2 and 2' are provided with a conductive film 23 so as to be electrically connected to each other, and the female contacts 2 are provided with a multilayer printed wiring board 2.
Pins 1 provided on the printed circuit board 22 are inserted into pins 0 and 2'. The thin film constituting the female contact can be manufactured by various methods as described above, but
Forming the shape memory alloy in a gas phase such as sputtering or vapor deposition can be done by closing the pin insertion hole with metal foil in the same manner as described above. According to this example, a soft martensitic state,
Alternatively, the hole space of the female contact can be memorized at low temperatures so that the space in the hole widens, allowing insertion with low insertion force, and can be manufactured using etching technology, making micronization possible, and production by integral molding. An electrical connector with high performance can be obtained. FIG. 17 is a sectional view showing an LSI mounting structure in which a multilayer printed wiring board 20 is provided with a connector 2 using the shape memory alloy of the present invention. Multilayer printed wiring board 2
The thin film connector 2 to 0 was manufactured in the same manner as described above using a thin ribbon made of a shape memory alloy by rapidly cooling a molten metal, or by a method of forming it in a gas phase such as vapor deposition or sputtering. A thin film can be formed directly on a multilayer printed wiring board by making it conductive, and can be formed into a desired shape using an etching technique. Effects of the Invention According to the present invention, it is possible to manufacture an electrical connector that can be inserted with low insertion force, can be made microscopic and compact, and can be integrally molded.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のピンコネクタのピン(雄接触
子)及び雌接触子(ソケツト)の斜視図、第2図
は本発明のコネクタの接続状況を示す断面図、第
3図は一方向形状記憶効果を利用した本発明のコ
ネクタの接続状況を示す断面図、第4図は二方向
形状記憶効果を利用した本発明のピンコネクタの
接続状況を示す断面図、第5図は本発明の雌接触
子の平面図、第6図は本発明の他の例を示す雌接
触子の平面図と雄接触子の挿入又は抜去の状況を
示す平面図、第7図は第6図bの雌接触子と雄接
触子との挿入時及び抜去時の状態を示す斜視図、
第8図は絶縁基板上に雌接触子を形成させた本発
明の他の例を示すコネクタ部品、第9図は接着及
び化学エツチングによつて本発明の雌接触子を一
体成形する製造工程を示す斜視図、第10図は絶
縁基板間に雌接触子をはさみ込んだ本発明のコネ
クタ部品の断面図、第11図及び第12図は第1
0図の断面を有するものの多ピンコネクタ構造を
示す斜視図、第13図は本発明のコネクタを使用
したLSI実装を示す斜視図、第14図〜第17図
は同じくLSI実装に本発明の電気コネクタを適用
した断面である。 1,1′,1,1′′′′……雄接触子(ピン)、
2,2′……雌接触子、3,14……絶縁基板、
5……雄接触子(ピン)挿入用穴部、7……スリ
ツト、9……接着剤、10……メタライズ層、メ
ツキ層、11……ろう、12……形状記憶合金の
薄膜、19,19′……半導体装置(LSI)、20
……多層印刷配線基板、21……コネクタ、22
……プリント回路用基板、23,24……導電
膜、25……半田、26……保護膜。
Fig. 1 is a perspective view of a pin (male contact) and female contact (socket) of a conventional pin connector, Fig. 2 is a sectional view showing the connection state of the connector of the present invention, and Fig. 3 is a one-way shape memory FIG. 4 is a cross-sectional view showing the connection state of the pin connector of the present invention that utilizes the two-way shape memory effect, and FIG. 5 is the female contact of the present invention. FIG. 6 is a plan view of a female contact showing another example of the present invention and a plan view showing the state of insertion or removal of a male contact, and FIG. 7 is a plan view of the female contact shown in FIG. 6b. and a perspective view showing the state when inserting and removing the male contact;
Fig. 8 shows a connector part showing another example of the present invention in which a female contact is formed on an insulating substrate, and Fig. 9 shows a manufacturing process for integrally molding the female contact of the present invention by adhesion and chemical etching. FIG. 10 is a sectional view of a connector component of the present invention in which a female contact is sandwiched between insulating substrates, and FIGS.
FIG. 13 is a perspective view showing an LSI mounting using the connector of the present invention, and FIGS. This is a cross section to which the connector is applied. 1, 1', 1, 1''''...Male contact (pin),
2, 2'... female contact, 3, 14... insulating board,
5...Male contact (pin) insertion hole, 7...Slit, 9...Adhesive, 10...Metallized layer, plating layer, 11...Solder, 12...Thin film of shape memory alloy, 19, 19'...Semiconductor device (LSI), 20
...Multilayer printed wiring board, 21...Connector, 22
... Printed circuit board, 23, 24 ... Conductive film, 25 ... Solder, 26 ... Protective film.

Claims (1)

【特許請求の範囲】 1 雌接触子と、該雌接触子に挿入する雄接触子
とを有するコネクタにおいて、前記雌接触子が、
前記雄接触子を挿入する穴部を有し、該穴部の中
心方向に伸びた複数の舌部を有する形状記憶合金
からなり、形状記憶合金からなる前記舌部は形状
記憶合金の変態温度以上で前記雄接触子に対して
圧力を加えるように形状を記憶し、少なくとも一
つの舌部とこの舌部に対向する少なくとも一つの
舌部との間隔が前記雄接触子の長手方向の断面に
おける長さより小さく、前記複数の舌部が前記雄
接触子挿入後、前記舌部の形状記憶を回復し、前
記雄接触子と電気的、機械的に接合することを特
徴とするコネクタ。 2 前記穴部が、前記雌接触子に形成されたアル
フアベツトのH字状のスリツトであることを特徴
とする特許請求の範囲第1項記載のコネクタ。 3 特許請求の範囲第1項において、前記雌接触
子が基板上に形成されていることを特徴とするコ
ネクタ。
[Scope of Claims] 1. A connector having a female contact and a male contact inserted into the female contact, the female contact comprising:
It is made of a shape memory alloy that has a hole into which the male contact is inserted and has a plurality of tongues extending toward the center of the hole, and the tongues made of the shape memory alloy have a temperature higher than the transformation temperature of the shape memory alloy. The shape of the male contact is memorized so as to apply pressure to the male contact, and the distance between at least one tongue and at least one tongue opposing this tongue is the length of the male contact in a longitudinal cross section. A connector characterized in that the plurality of tongues recovers the shape memory of the tongues after the male contact is inserted, and is electrically and mechanically connected to the male contact. 2. The connector according to claim 1, wherein the hole portion is an H-shaped slit formed in the female contact. 3. The connector according to claim 1, wherein the female contact is formed on a substrate.
JP58135883A 1983-07-27 1983-07-27 connector Granted JPS6028183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58135883A JPS6028183A (en) 1983-07-27 1983-07-27 connector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58135883A JPS6028183A (en) 1983-07-27 1983-07-27 connector

Publications (2)

Publication Number Publication Date
JPS6028183A JPS6028183A (en) 1985-02-13
JPH047552B2 true JPH047552B2 (en) 1992-02-12

Family

ID=15162006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58135883A Granted JPS6028183A (en) 1983-07-27 1983-07-27 connector

Country Status (1)

Country Link
JP (1) JPS6028183A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6332475U (en) * 1986-08-18 1988-03-02
DE102005027852A1 (en) * 2005-06-16 2006-12-21 Robert Bosch Gmbh Arrangement and method for the electrical connection of an electronic circuit in a housing
JP4922777B2 (en) * 2007-01-31 2012-04-25 矢崎総業株式会社 How to connect terminals to metal plates
JP6056502B2 (en) * 2013-01-25 2017-01-11 株式会社オートネットワーク技術研究所 Noise filter built-in connector
JP7848789B2 (en) * 2023-12-26 2026-04-21 トヨタ自動車株式会社 Drive unit

Also Published As

Publication number Publication date
JPS6028183A (en) 1985-02-13

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