JPH0481738B2 - - Google Patents
Info
- Publication number
- JPH0481738B2 JPH0481738B2 JP61011092A JP1109286A JPH0481738B2 JP H0481738 B2 JPH0481738 B2 JP H0481738B2 JP 61011092 A JP61011092 A JP 61011092A JP 1109286 A JP1109286 A JP 1109286A JP H0481738 B2 JPH0481738 B2 JP H0481738B2
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- light
- optical fiber
- hydrogen
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 35
- 239000013307 optical fiber Substances 0.000 claims description 31
- 239000001257 hydrogen Substances 0.000 claims description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 16
- 230000031700 light absorption Effects 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 230000001902 propagating effect Effects 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 230000002238 attenuated effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 125000004802 cyanophenyl group Chemical group 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/75—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
- G01N21/77—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
- G01N21/7703—Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は石油精製プラント等において有用な水
素ガス濃度を全光式で検知する本質防爆型の光セ
ンサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an essentially explosion-proof optical sensor that detects hydrogen gas concentration in an all-optical manner, which is useful in oil refining plants and the like.
従来、この種の全光式水素検知センサとして第
5図に示すものがある。
A conventional all-optical hydrogen detection sensor of this type is shown in FIG.
図において、誘電体基板1に光導波路2が形成
してあり、この導波路2は入力用光フアイバ3A
が接続される入力導波路2Aと、この入力導波路
2AからY型に2分岐して基板の他端面に至る分
岐導波路2B,2Cで構成され、これら両分岐導
波路2B,2Cの各端面には出力用光フアイバ3
B,3Cがそれぞれ接続される。 In the figure, an optical waveguide 2 is formed on a dielectric substrate 1, and this waveguide 2 is connected to an input optical fiber 3A.
It consists of an input waveguide 2A to which is connected, and branch waveguides 2B and 2C that branch into two in a Y-shape from this input waveguide 2A and reach the other end surface of the substrate. Output optical fiber 3
B and 3C are connected respectively.
そして分岐導波路2B,2Cのうち一方2Bが
水素検知用導波路で他方2Cが参照光導波路とな
つており、前者導波路2B上には水素と反応して
光吸収係数が変化する誘電体物質からなる薄膜4
が設けてあり、さらにこの薄膜4上に水素ガスを
解離吸着する金属の薄膜5が積層形成してある。 Of the branch waveguides 2B and 2C, one 2B is a hydrogen detection waveguide and the other 2C is a reference optical waveguide, and on the former waveguide 2B is a dielectric material that reacts with hydrogen and changes its light absorption coefficient. A thin film 4 consisting of
A metal thin film 5 for dissociating and adsorbing hydrogen gas is further laminated on this thin film 4.
上記のセンサにおいて、導波路2Bを伝搬する
光はこの導波路内にほとんど閉じ込められている
が一部はエバネツセント光として誘電体薄膜4の
部分に浸み出している。 In the above sensor, most of the light propagating through the waveguide 2B is confined within this waveguide, but some of it leaks into the dielectric thin film 4 as evanescent light.
表面薄膜5に水素ガスが接触すると水素はこの
薄膜により解離吸着され、この解離水素が下地膜
4と反応して地下膜4が着色し、前記エバネツセ
ント光が膜4中で吸収を受けて減衰し、出力用光
フアイバ3Bへの出射光量が減少する。したがつ
てこの出射光量と、上記薄膜の設けられていない
分岐導波路2Cから出射される参照光の光量とを
比較することによつてその光量差変化量から水素
ガス濃度を検知することができる。 When hydrogen gas comes into contact with the surface thin film 5, the hydrogen is dissociated and adsorbed by this thin film, and this dissociated hydrogen reacts with the base film 4 to color the underground film 4, and the evanescent light is absorbed and attenuated in the film 4. , the amount of light emitted to the output optical fiber 3B decreases. Therefore, by comparing this emitted light amount with the light amount of the reference light emitted from the branch waveguide 2C in which the thin film is not provided, the hydrogen gas concentration can be detected from the amount of change in the light amount difference. .
上述した従来の全光式水素検知センサでは、光
フアイバが最低限導波路の入力側1本と出力側2
本の計3本必要であり、しかもそれら光フアイバ
が導波路の対向側面にそれぞれ位置するため、実
際に各種プラントや装置に装着する際、光フアイ
バの保護、保持に複雑な手段が必要となり、敷設
および保守の作業性が悪いという欠点があつた。
In the conventional all-optical hydrogen detection sensor described above, the optical fiber is at least one input side and two output sides of the waveguide.
A total of three optical fibers are required, and since these optical fibers are located on opposite sides of the waveguide, complicated means are required to protect and hold the optical fibers when actually installing them in various plants and equipment. The disadvantage was that the workability of installation and maintenance was poor.
基板に形成した光導波路の側部に、水素と反応
することによつて光吸収係数が変化する誘電体薄
膜を積層形成するとともに、該薄膜表面を水素ガ
スを解離吸着する金属薄膜で被覆し、且つ前記導
波路の一方の端面に密着して反射体を設けるとと
もに、他方の端面に入出力用光フアイバを接続し
て水素検知センサを構成した。
A dielectric thin film whose light absorption coefficient changes by reacting with hydrogen is laminated on the side of the optical waveguide formed on the substrate, and the surface of the thin film is coated with a metal thin film that dissociates and adsorbs hydrogen gas, In addition, a reflector was provided in close contact with one end face of the waveguide, and an input/output optical fiber was connected to the other end face to constitute a hydrogen detection sensor.
上記構成のセンサにおいて、入出力用光フアイ
バを通して導波路内に光を入射させると、伝搬光
は導波路内を伝搬した後、他端に設けられた反射
体で反射され、同一の導波路を戻つて再び入出力
用光フアイバに出射する。そして水素ガスが吸着
すると導波路上の薄膜が着色し、導波路から浸み
出して上記薄膜を通るエバネツセント光が導波路
の往復伝搬時に減衰する。
In the sensor with the above configuration, when light is introduced into the waveguide through the input/output optical fiber, the propagating light propagates inside the waveguide and is then reflected by the reflector provided at the other end, causing the same waveguide to pass through the same waveguide. The light returns and is emitted to the input/output optical fiber again. When hydrogen gas is adsorbed, the thin film on the waveguide becomes colored, and the evanescent light that seeps out of the waveguide and passes through the thin film is attenuated during reciprocating propagation through the waveguide.
このようにして、従来のものに比べ、同一長の
導波路素子で実質的に2倍長の検出導波路を設け
たのと等価となり、それだけ検出感度を良好にで
きるとともに、反射体を設けたことにより、単一
の光フアイバ接続のみで済むので装置全体の大き
さを小型化でき、また組立て、設置、保守作業が
非常に容易になる。 In this way, compared to the conventional one, it is equivalent to providing a detection waveguide that is substantially twice the length using a waveguide element of the same length, and the detection sensitivity can be improved accordingly. As a result, only a single optical fiber connection is required, so the overall size of the device can be reduced, and assembly, installation, and maintenance operations are greatly facilitated.
以下本発明を図面に示した実施例について詳細
に説明する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to embodiments shown in the drawings.
第1図、第2図において10は使用波長に対し
て透明な基板であり、この基板10中に直線状の
単一の光導波路11が埋め込み形成してある。 In FIGS. 1 and 2, reference numeral 10 denotes a substrate that is transparent to the wavelength used, and a single linear optical waveguide 11 is embedded in this substrate 10.
この導波路11は、例えばLiNbO3からなる基
板10にTiを熱拡散させたり、あるいはガラス
基板10にガラスの屈折率増大に寄与するTl等
の一価陽イオンをイオン交換拡散する方法等で形
成することができる。光導波路11の上部には導
波路のほぼ全長にわたり、且つ導波路の全幅を少
なくと覆うように光吸収層12が設けてあり、さ
らにこの光吸収層12上に水素吸着層13が積層
形成してある。水素吸着層13は、水素ガスを吸
着・解離して電子、プロトンを発生させる物質か
ら成り、光吸収層12は上記の電子、プロトンを
受けて光吸収係数が変化する物質からなる。 The waveguide 11 is formed, for example, by thermally diffusing Ti into the substrate 10 made of LiNbO 3 or by ion-exchange diffusion of monovalent cations such as Tl, which contribute to increasing the refractive index of glass, into the glass substrate 10. can do. A light absorption layer 12 is provided on the upper part of the optical waveguide 11 so as to cover almost the entire length of the waveguide and at least the entire width of the waveguide, and a hydrogen adsorption layer 13 is further laminated on the light absorption layer 12. There is. The hydrogen adsorption layer 13 is made of a substance that adsorbs and dissociates hydrogen gas to generate electrons and protons, and the light absorption layer 12 is made of a substance whose light absorption coefficient changes upon receiving the electrons and protons.
上記の吸着層13の材質としてはパラジウム
(Pd)あるいは白金(Pt)が好適である。 As the material for the above adsorption layer 13, palladium (Pd) or platinum (Pt) is suitable.
また、光吸収層12を形成する物質としては
WO3好適であり、その他一般にエレクトロクロ
ミツクを示す無機材料、例えばM0O3、V2O5、
TiO2、Ir(OH)o、Rh2O3・XH2Oなどが使用可能
である。 Moreover, as a substance forming the light absorption layer 12,
WO 3 is suitable, and other inorganic materials that are generally electrochromic, such as M 0 O 3 , V 2 O 5 ,
TiO 2 , Ir(OH) o , Rh 2 O 3 .XH 2 O, etc. can be used.
また光吸収層12は有機材料で構成してもよ
く、例えばヘプエルビオロゲン、シアノフエニー
ルビオロゲン、コバルトビリジル錯体、ポリマー
化テトラチオフルバレン(TTF)、ルテシウムジ
フタロシアニンなどが使用できる。 The light absorption layer 12 may be made of an organic material, such as hepyl viologen, cyanophenyl viologen, cobalt biridyl complex, polymerized tetrathiofulvalene (TTF), or lutetium diphthalocyanine.
そして基板10の一方の端面10Aに露出して
いる光導波路11の端面11Aには反射体14が
密着して設けてある。この反射体14は例えば
Al、Ag等の高反射金属膜を上記面に蒸着、スパ
ツタリング等で付着することにより形成される。
あるいは別途の基材面に反射膜を設けたものを導
波路端面に接合して形成してもよい。また誘電体
反射膜も使用できる。また光導波路11の他方の
端面11Bには、入出力兼用の光フアイバ15が
光学的に接続されている。上記構成の水素検知セ
ンサ20において、光フアイバ15を通じて伝送
光を光導波路11内に入射させると、光導波路1
1内を伝搬した後、他端の反射体14で伝搬光が
全量反射され、光導波路11を再び帰還して光フ
アイバ15に出射する。 A reflector 14 is provided in close contact with an end surface 11A of the optical waveguide 11 exposed on one end surface 10A of the substrate 10. This reflector 14 is for example
It is formed by attaching a highly reflective metal film such as Al or Ag to the above surface by vapor deposition, sputtering, or the like.
Alternatively, a reflection film provided on a separate base material surface may be bonded to the waveguide end face. A dielectric reflective film can also be used. Further, an optical fiber 15 for both input and output is optically connected to the other end surface 11B of the optical waveguide 11. In the hydrogen detection sensor 20 having the above configuration, when the transmitted light is made to enter the optical waveguide 11 through the optical fiber 15, the optical waveguide 1
After propagating through the optical fiber 1, the entire amount of the propagating light is reflected by the reflector 14 at the other end, returns to the optical waveguide 11 again, and is emitted to the optical fiber 15.
上記の吸着層13に水素ガスが接触すると解離
吸着されて、この解離水素と光吸収層12が反応
し吸収層12の光吸収係数が増加する。 When hydrogen gas comes into contact with the adsorption layer 13, it is dissociated and adsorbed, and the dissociated hydrogen reacts with the light absorption layer 12, increasing the light absorption coefficient of the absorption layer 12.
例えば光吸収層12としてWO3を使用した場
合は、当初透明であつたものがタングステンブロ
ンズに着色する。これにより、光導波路11を伝
搬している導波光のエバネツセント光部分が光吸
収層12で吸収を受けて減衰する。この光吸収減
衰は導波路11内を反射体14に向けて進行する
とき、反射体14で反射されて光フアイバ15に
向けて帰還するときの往復で生じ、したがつて比
較的短距離の導波路11であつても、あるいは水
素ガスの濃度が低い場合でも充分な光量減衰が生
じる。 For example, when WO 3 is used as the light absorption layer 12, what was initially transparent becomes colored tungsten bronze. As a result, the evanescent light portion of the guided light propagating through the optical waveguide 11 is absorbed by the light absorption layer 12 and attenuated. This light absorption attenuation occurs during the round trip when the light travels within the waveguide 11 toward the reflector 14, is reflected by the reflector 14, and returns toward the optical fiber 15; therefore, it occurs over a relatively short distance. Even if the wave path 11 is used, or even if the concentration of hydrogen gas is low, sufficient attenuation of the amount of light occurs.
このようにして、光フアイバ15の他端側に受
光素子を接続し受光量変化を計測することにより
センサ配置箇所での水素ガスの発生およびその濃
度を検出することができる。 In this way, by connecting a light receiving element to the other end of the optical fiber 15 and measuring changes in the amount of received light, it is possible to detect the generation of hydrogen gas and its concentration at the location where the sensor is disposed.
第4図に本発明のセンサの他の構造例を示す。
本例では、センサの耐湿性を高めるため、水素吸
着層13の外側に、両層12,13全体を覆うよ
うに、耐候性に優れた物質の被膜から成る水素選
択透過膜16を設けたものであり、この選択透過
膜16は水素を選択的に透過させるとともに、水
蒸気の透過は阻止し得る程度のミクロな孔径をも
つた被膜であり、例えばSiO2を電子線加熱蒸着
法で500オングストローム程度の厚みで付着させ
ることにより形成することができる。 FIG. 4 shows another example of the structure of the sensor of the present invention.
In this example, in order to improve the moisture resistance of the sensor, a hydrogen selective permeable membrane 16 made of a material with excellent weather resistance is provided on the outside of the hydrogen adsorption layer 13 so as to cover both layers 12 and 13 entirely. This selectively permeable membrane 16 is a coating having a microscopic pore size that allows hydrogen to permeate selectively while blocking the permeation of water vapor. It can be formed by depositing it to a thickness of .
第3図に本発明に係るセンサを用いた水素検知
システムの一例を示す。 FIG. 3 shows an example of a hydrogen detection system using the sensor according to the present invention.
同図において、発光装置31からの光は入力光
フアイバ32を通つて方向性結合器33に入り、
ここで一部の光が入出力用光フアイバ15へ、ま
た残りの光がモニター光フアイバ37に伝送され
る。入出力用光フアイバ15を伝搬する光は反射
型水素検知センサ20に達し、水素ガス濃度に応
じた減衰を受け、再び入出力用光フアイバ15を
通つて方向性結合器33へ戻り、一部分の光が出
力光フアイバ36に達する。出力光フアイバ36
からの光と、モニター光フアイバ37からの光は
それぞれ受光装置38,39で電気信号に変換さ
れ演算装置40で比較される。 In the figure, light from a light emitting device 31 passes through an input optical fiber 32 and enters a directional coupler 33.
Here, part of the light is transmitted to the input/output optical fiber 15 and the remaining light is transmitted to the monitor optical fiber 37. The light propagating through the input/output optical fiber 15 reaches the reflective hydrogen detection sensor 20, undergoes attenuation according to the hydrogen gas concentration, returns to the directional coupler 33 through the input/output optical fiber 15, and a portion of the light is transmitted through the input/output optical fiber 15. Light reaches output optical fiber 36. Output optical fiber 36
The light from the monitor optical fiber 37 and the light from the monitor optical fiber 37 are converted into electrical signals by the light receiving devices 38 and 39, respectively, and compared by the arithmetic device 40.
次に本発明の具体的な数値例を示すと、基板1
0としてLiNbO3を用い、これにTiを熱拡散させ
て光導波路11を形成し、基板10の両端面を導
波路に対して直角に研磨した後、導波路端面に反
射体14としてアルミニウムを1000オングストロ
ームの厚さに真空蒸着した。また導波路11上に
光吸収層12としてWO3薄膜を1μmの厚さに真
空蒸着した。WO3は純度99.99%のペレツトを用
い、アルミナでコートされたW線ルツボを用いて
抵抗加熱蒸発させてイオンプレーテイングした。
蒸着条件は、酸素圧力1×10-4Torr、イオン化
用高周波電力200W、イオン加速電圧−500Vとし
た。蒸着時の基板温度は常温であり、得られた
WO3膜はアモルフアスになつており無色透明で
あつた。 Next, to show a specific numerical example of the present invention, the substrate 1
LiNbO 3 was used as a reflector 14, and Ti was thermally diffused thereto to form an optical waveguide 11. After polishing both end faces of the substrate 10 at right angles to the waveguide, aluminum was used as a reflector 14 on the end face of the waveguide. Vacuum deposited to a thickness of angstroms. Further, a WO 3 thin film was vacuum-deposited as a light absorption layer 12 on the waveguide 11 to a thickness of 1 μm. WO 3 was ion plated using pellets with a purity of 99.99% and evaporated by resistance heating using a W-wire crucible coated with alumina.
The deposition conditions were an oxygen pressure of 1×10 −4 Torr, ionization high-frequency power of 200 W, and ion acceleration voltage of −500 V. The substrate temperature during deposition was room temperature, and the obtained
The WO 3 film was amorphous and colorless and transparent.
さらにこの上に吸着層13としてPdを100オン
グストロームの厚さに電子線加熱蒸着法で付着さ
せた。 Further, Pd was deposited thereon as an adsorption layer 13 to a thickness of 100 angstroms by electron beam heating vapor deposition.
上記のセンサを第3図に示した計測システムに
組み込み、水素ガス濃度を測定したところ、20〜
2000ppmの濃度範囲を±5%の精度で測定可能で
あつた。 When the above sensor was incorporated into the measurement system shown in Figure 3 and the hydrogen gas concentration was measured, it was found that 20~
It was possible to measure a concentration range of 2000 ppm with an accuracy of ±5%.
本発明によれば、水素検知センサと測定系とを
単一の光フアイバで接続できるので経済的であ
り、また設置、保守の作業性も良好になる。
According to the present invention, the hydrogen detection sensor and the measurement system can be connected with a single optical fiber, which is economical, and also improves workability in installation and maintenance.
さらに導波路の往および復の両伝搬過程で光吸
収減衰を受けるため、従来構造に比べ素子を小型
化できると同時に、同一の大きさの素子で検知感
度を大幅に向上させることができる。 Furthermore, since light is absorbed and attenuated during both the forward and backward propagation processes of the waveguide, the device can be made smaller compared to conventional structures, and at the same time, the detection sensitivity can be greatly improved with the same size device.
また、導波路のパターンも単純な単一直線路で
あつても充分な検出感度が得られるため、製造も
容易である。 Further, even if the waveguide pattern is a simple single straight path, sufficient detection sensitivity can be obtained, so manufacturing is easy.
第1図は本発明の一実施例を示す側断面図、第
2図は同平面図、第3図は本発明のセンサを組み
込んだ全光式の水素検知システムの一例を示すブ
ロツク図、第4図は本発明の他の実施例を示す横
断面図、第5図は従来の水素検知センサを示す斜
視図である。
10……基板、11……光導波路、12……光
吸収層、13……吸着層、14……反射体、15
……入出力用光フアイバ、16……水素選択透過
保護被膜、20……水素検知光センサ、31……
発光装置、32,36,37……光フアイバ、3
3……方向性結合器、38,39……受光装置、
40……演算装置。
FIG. 1 is a side sectional view showing an embodiment of the present invention, FIG. 2 is a plan view thereof, and FIG. 3 is a block diagram showing an example of an all-optical hydrogen detection system incorporating the sensor of the present invention. FIG. 4 is a cross-sectional view showing another embodiment of the present invention, and FIG. 5 is a perspective view showing a conventional hydrogen detection sensor. 10... Substrate, 11... Optical waveguide, 12... Light absorption layer, 13... Adsorption layer, 14... Reflector, 15
...Input/output optical fiber, 16...Hydrogen selective transmission protective coating, 20...Hydrogen detection optical sensor, 31...
Light emitting device, 32, 36, 37... Optical fiber, 3
3... Directional coupler, 38, 39... Light receiving device,
40...Arithmetic device.
Claims (1)
応することによつて光吸収係数が変化する誘電体
薄膜を積層形成するとともに、該薄膜表面を水素
ガスを解離吸着する金属薄膜で被覆し、且つ前記
導波路の一方の端面に密着して反射体を設けると
ともに、他方の端面に入出力用光フアイバを接続
したことを特徴とする反射型水素検知光センサ。1. Laminating a dielectric thin film whose light absorption coefficient changes by reacting with hydrogen on the top of the optical waveguide formed on the substrate, and coating the surface of the thin film with a metal thin film that dissociates and adsorbs hydrogen gas, A reflective hydrogen detection optical sensor characterized in that a reflector is provided in close contact with one end face of the waveguide, and an input/output optical fiber is connected to the other end face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61011092A JPS62170838A (en) | 1986-01-23 | 1986-01-23 | Optical sensor for reflection type hydrogen detection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61011092A JPS62170838A (en) | 1986-01-23 | 1986-01-23 | Optical sensor for reflection type hydrogen detection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62170838A JPS62170838A (en) | 1987-07-27 |
| JPH0481738B2 true JPH0481738B2 (en) | 1992-12-24 |
Family
ID=11768348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61011092A Granted JPS62170838A (en) | 1986-01-23 | 1986-01-23 | Optical sensor for reflection type hydrogen detection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62170838A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005054458A1 (en) * | 2003-12-03 | 2005-06-16 | Hitachi High-Technologies Corporation | Method for analyzing nucleic acid, cell for analyzing nucleic acid, and analyzer for nucleic acid |
| JP2010515022A (en) * | 2006-12-20 | 2010-05-06 | スリーエム イノベイティブ プロパティズ カンパニー | Detection system |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0197249U (en) * | 1987-12-21 | 1989-06-28 | ||
| EP1291642A1 (en) * | 2001-09-05 | 2003-03-12 | Linde Medical Sensors AG | Sensor system comprising an integrated optical waveguide for the detection of chemical substances |
| DE102006054165B3 (en) * | 2006-11-16 | 2008-04-17 | Tyco Electronics Raychem Gmbh | Optical sensor i.e. hydrogen sensor, arrangement for detecting hydrogen in gaseous measuring medium, has transducer designed such that physical characteristic is changed in response to presence and/or concentration of analyte |
-
1986
- 1986-01-23 JP JP61011092A patent/JPS62170838A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005054458A1 (en) * | 2003-12-03 | 2005-06-16 | Hitachi High-Technologies Corporation | Method for analyzing nucleic acid, cell for analyzing nucleic acid, and analyzer for nucleic acid |
| JP2010515022A (en) * | 2006-12-20 | 2010-05-06 | スリーエム イノベイティブ プロパティズ カンパニー | Detection system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62170838A (en) | 1987-07-27 |
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