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JPH0513458B2 - - Google Patents
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JPH0513458B2 - - Google Patents

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Publication number
JPH0513458B2
JPH0513458B2 JP61011093A JP1109386A JPH0513458B2 JP H0513458 B2 JPH0513458 B2 JP H0513458B2 JP 61011093 A JP61011093 A JP 61011093A JP 1109386 A JP1109386 A JP 1109386A JP H0513458 B2 JPH0513458 B2 JP H0513458B2
Authority
JP
Japan
Prior art keywords
hydrogen
light
light absorption
film
hydrogen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61011093A
Other languages
Japanese (ja)
Other versions
JPS62170840A (en
Inventor
Eiji Sudo
Koichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61011093A priority Critical patent/JPS62170840A/en
Publication of JPS62170840A publication Critical patent/JPS62170840A/en
Publication of JPH0513458B2 publication Critical patent/JPH0513458B2/ja
Granted legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/7703Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator using reagent-clad optical fibres or optical waveguides

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は水素ガス濃度を全光式で検知する本質
防爆型の光センサに関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an essentially explosion-proof optical sensor that detects hydrogen gas concentration using an all-optical method.

〔従来技術の説明〕[Description of prior art]

従来この種の全光式水素検知光センサとして第
4図に示す構造のものがある。
A conventional all-optical hydrogen detection optical sensor of this type has a structure shown in FIG.

図において誘電体基板1に光導波路2が形成し
てあり、この光導波路2の露出上面に水素と反応
して光吸収係数が変化する物質からなる光吸収層
3が設けられ、さらにこの光吸収層3の上部に水
素ガスを解離吸着する金属膜から成る吸着層4が
積層してある。そして光導波路2の両端にはそれ
ぞれ入力用光フアイバ5Aおよび出力用光フアイ
バ5Bが接続される。
In the figure, an optical waveguide 2 is formed on a dielectric substrate 1, and a light absorption layer 3 made of a substance whose light absorption coefficient changes by reacting with hydrogen is provided on the exposed upper surface of the optical waveguide 2. An adsorption layer 4 made of a metal film that dissociates and adsorbs hydrogen gas is laminated on top of the layer 3. An input optical fiber 5A and an output optical fiber 5B are connected to both ends of the optical waveguide 2, respectively.

上記のセンサで表面の吸着層4に水素ガスが接
触すると解離吸着され、この解離水素の下方の光
吸収層3が反応してその光吸収係数が変化する。
光導波路2を伝搬する導波光は導波路にほとんど
閉じ込められているが、一部はエバネツセント光
として光吸収層3中に浸み出しているので、水素
接触により光吸収層3の光吸収係数が増大すると
上記エバネツセント光が吸収を受けて減衰し、出
力用光フアイバ5Bへの出射量が減少する。
When hydrogen gas comes into contact with the adsorption layer 4 on the surface of the above sensor, it is dissociated and adsorbed, and the light absorption layer 3 below the dissociated hydrogen reacts, changing its light absorption coefficient.
Most of the guided light propagating through the optical waveguide 2 is confined in the waveguide, but some of it leaks into the light absorption layer 3 as evanescent light, so the light absorption coefficient of the light absorption layer 3 changes due to hydrogen contact. When it increases, the evanescent light is absorbed and attenuated, and the amount of light emitted to the output optical fiber 5B decreases.

したがつて出力用光フアイバ5Bからの出射光
量の変化を測定すれば水素ガス濃度を知ることが
できる。
Therefore, the hydrogen gas concentration can be determined by measuring the change in the amount of light emitted from the output optical fiber 5B.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上記従来の構造では、水素ガス吸着層4の表面
外気と常時接触しており、このため水素ガス以外
の種々の物質との反応を受けやすく、特に水蒸気
と反応することによつて吸着層4および光吸収層
3の水素ガスに対する反応性が早期に劣化すると
いう問題があつた。
In the above-mentioned conventional structure, the surface of the hydrogen gas adsorption layer 4 is in constant contact with the outside air, and therefore is susceptible to reactions with various substances other than hydrogen gas, and in particular, by reacting with water vapor, the adsorption layer 4 and There was a problem that the reactivity of the light absorption layer 3 to hydrogen gas deteriorated early.

〔問題点を解決するための手段〕[Means for solving problems]

吸着層4の表面全体を、水素ガスを透過し且つ
少なくとも水蒸気に対し不透過性を有する選択透
過被膜で被覆した。
The entire surface of the adsorption layer 4 was coated with a selectively permeable coating that was permeable to hydrogen gas and impermeable to at least water vapor.

〔作用〕[Effect]

水素ガスは選択透過膜を透過し、従来と同様に
水素ガス吸着層で解離吸着し、解離水素と反応し
た光吸収層の光吸収係数が変化して光導波路から
の出射光の光量が変化する。
Hydrogen gas passes through the selectively permeable membrane and is dissociated and adsorbed by the hydrogen gas adsorption layer as in the conventional method, and the light absorption coefficient of the light absorption layer that reacts with the dissociated hydrogen changes, changing the amount of light emitted from the optical waveguide. .

一方、水蒸気は選択透過膜によつて侵入が阻止
され、吸着層および光吸収層の露出表面及び側縁
が保護されるので長期にわたり安定した水素検知
性能が維持される。
On the other hand, water vapor is prevented from entering by the selectively permeable membrane, and the exposed surfaces and side edges of the adsorption layer and light absorption layer are protected, so stable hydrogen detection performance is maintained over a long period of time.

〔実施例〕〔Example〕

以下本発明を図面に示した実施例に基づいて詳
細に説明する。
The present invention will be described in detail below based on embodiments shown in the drawings.

第1図ないし第2図において、10は基板、1
1は光導波路であり、導波路11は例えば
LiNbO3基板中へのTiの熱拡散あるいはガラス基
板中へのイオン交換拡散等の手段で形成される。
そして光導波路11の全長のうち両端近傍を残し
て導波路11の露出表面を覆うように、基板上に
光吸収層12が積層形成してあり、さらにこの光
吸収層12上に吸着層13が積層してある。
In FIGS. 1 and 2, 10 is a substrate;
1 is an optical waveguide, and the waveguide 11 is, for example,
It is formed by means such as thermal diffusion of Ti into a LiNbO 3 substrate or ion exchange diffusion into a glass substrate.
A light absorption layer 12 is laminated on the substrate so as to cover the exposed surface of the waveguide 11 except for the vicinity of both ends of the entire length of the optical waveguide 11, and an adsorption layer 13 is further formed on the light absorption layer 12. It's layered.

吸着層13は、水素ガスを吸着解離して電子、
プロトンを発生させる金属薄膜から成り、光吸収
層12は上記の電子、プロトンを受けて光吸収係
数が変化する誘電体の薄膜で構成されている。
The adsorption layer 13 adsorbs and dissociates hydrogen gas to generate electrons and
The light absorption layer 12 is made of a metal thin film that generates protons, and the light absorption layer 12 is made of a dielectric thin film whose light absorption coefficient changes in response to the electrons and protons mentioned above.

上記の吸着層13の材質としてはパラジウム
(Pd)あるいは白金(Pt)が好適である。
As the material for the above adsorption layer 13, palladium (Pd) or platinum (Pt) is suitable.

また光吸収層12を形成する物質としては
WO3が好適であり、その他一般にエレクトロク
ロミツクを示す無機材料、例えばMoO3、V2O5
TiO2、Ir(OH)n、Rh2O3、XH2Oなどが使用可
能である。
In addition, as a substance forming the light absorption layer 12,
WO 3 is preferred; other inorganic materials that are generally electrochromic, such as MoO 3 , V 2 O 5 ,
TiO 2 , Ir(OH)n, Rh 2 O 3 , XH 2 O, etc. can be used.

また光吸収層12は有機材料で構成してもよ
く、例えばヘプエルビオロゲン、シアノフエノー
ルビオロゲン、コバルトピリジル錯体、ポリマー
化テトラチオフルバレン(TTF)、ルテシウムジ
フタロシアニンなどが使用できる。そして吸着層
13の表面及び吸着層13と光吸収層12の全周
側縁を覆つて、水素ガス選択透過被膜14で保護
被覆してある。この被覆14は水素ガスを透過
し、且つ少なくとも水蒸気透過を阻止し得るよう
なミクロな孔径をもつた耐候性に優れた材料の薄
膜、例えばSiO2膜で形成されている。
The light absorption layer 12 may be made of an organic material, such as hep-er viologen, cyanophenol viologen, cobalt pyridyl complex, polymerized tetrathiofulvalene (TTF), lutetium diphthalocyanine, or the like. The surface of the adsorption layer 13 and the entire circumferential side edges of the adsorption layer 13 and light absorption layer 12 are covered with a hydrogen gas selective permeation film 14 for protection. This coating 14 is formed of a thin film of a material with excellent weather resistance, such as a SiO 2 film, having micropores that allow hydrogen gas to pass therethrough and at least block water vapor permeation.

一例として電子線加熱蒸着法を用い、高純度の
SiOペレツトを蒸着源とし、酸素圧力1×
10-4Torr、イオン化用高周波電力50W、イオン
加速電圧−500Vの条件で厚み約500オングストロ
ームのSiO2膜を蒸着することにより上記機能を
もつた被膜14が得られる。SiO2以外にゼオラ
イト、アルミナ等も被膜14として使用すること
ができる。
As an example, using electron beam heating evaporation method, high-purity
SiO pellets are used as the evaporation source, oxygen pressure is 1×
The film 14 having the above function is obtained by depositing a SiO 2 film with a thickness of about 500 angstroms under the conditions of 10 -4 Torr, ionization high frequency power of 50 W, and ion acceleration voltage of -500 V. In addition to SiO 2 , zeolite, alumina, etc. can also be used as the coating 14.

なお被膜14は吸着層13、光吸収層12の形
成領域のみに限定して設けてもよいが、図示例の
ように光導波路11の全長にわたり形成しておけ
ば導波路11の保護にもなるので都合がよい。
Note that the coating 14 may be provided only in the region where the adsorption layer 13 and the light absorption layer 12 are formed, but if it is formed over the entire length of the optical waveguide 11 as shown in the illustrated example, it will also protect the waveguide 11. So it's convenient.

上記の場合は、両層12,13外の領域の被膜
部分14Bは前述のような水素選択透過性を必要
としないので、両層12,13の被覆保護部分1
4Aを残して他の被膜部分14BにCO2レーザー
の照射等で局部加熱を与えることにより、導波路
との境界面を平滑化しておくことが伝搬損失を低
減する上で望ましい。
In the above case, since the coating portion 14B in the area outside both layers 12 and 13 does not require selective hydrogen permeability as described above, the coating protection portion 14B of both layers 12 and 13 does not require hydrogen selective permeability as described above.
In order to reduce propagation loss, it is desirable to smooth the interface with the waveguide by applying local heating to the other coating portion 14B, leaving the coating portion 4A, by irradiating with a CO 2 laser or the like.

上記のように構成されたセンサ素子20の光導
波路11の一端に入力用光フアイバ15Aを接続
し、他端に出力用光フアイバ15Bを接続する。
An input optical fiber 15A is connected to one end of the optical waveguide 11 of the sensor element 20 configured as described above, and an output optical fiber 15B is connected to the other end.

センサ素子20を被検知箇所に配置し、離れた
箇所にある半導体レーザ等の光源装置16に入力
用光フアイバ15Aの他端を接続するとともに、
出力用光フアイバ15Bの他端を光検出器17に
接続する。光源装置16から出た光は光フアイバ
15A中を伝送され後センサ素子20の光導波路
11に入射し、導波路11を伝搬する。伝搬光の
一部はエバネツセント光として光吸収層12の部
分に浸み出している。このエバネツセント光の浸
み出し量は、光吸収層12の屈曲率と導波路11
の屈曲率の大きさに依存し、約20%まで大きくす
ることができる。センサ素子20の設置箇所に水
素ガスが存在すると、水素ガスは保護被膜14を
透過して吸着層13例えばPd薄膜に接触して解
離吸着され、この解離された水素が光吸収層12
と反応して該吸収層12の光吸収係数が変化す
る。
The sensor element 20 is placed at the detected location, and the other end of the input optical fiber 15A is connected to a light source device 16 such as a semiconductor laser located at a remote location.
The other end of the output optical fiber 15B is connected to the photodetector 17. The light emitted from the light source device 16 is transmitted through the optical fiber 15A, enters the optical waveguide 11 of the sensor element 20, and propagates through the waveguide 11. A part of the propagated light leaks into the light absorption layer 12 as evanescent light. The amount of seepage of this evanescent light is determined by the curvature of the light absorption layer 12 and the waveguide 11.
can be as large as about 20%, depending on the magnitude of the curvature. When hydrogen gas is present at the location where the sensor element 20 is installed, the hydrogen gas passes through the protective coating 14 and comes into contact with the adsorption layer 13, for example, a Pd thin film, and is dissociated and adsorbed, and this dissociated hydrogen is absorbed into the light absorption layer 12.
The light absorption coefficient of the absorption layer 12 changes as a result of the reaction.

例えば光吸収層12がWO3の場合はタングス
テンブロンズを生成し着色する。
For example, when the light absorption layer 12 is made of WO 3 , tungsten bronze is produced and colored.

これにより光導波路11を伝搬している導波光
のエバネツセント光がWO3層中で吸収を受けて
減衰し、光検出器17における受光量が減少す
る。そしてこの受光量は水素ガス濃度に依存する
ので、受光量の変化量を測定することにより水素
ガス濃度を検知することができる。
As a result, the evanescent light of the guided light propagating through the optical waveguide 11 is absorbed and attenuated in the WO 3 layer, and the amount of light received by the photodetector 17 is reduced. Since the amount of received light depends on the hydrogen gas concentration, the hydrogen gas concentration can be detected by measuring the amount of change in the amount of received light.

第3図に本発明の他の実施例を示す。 FIG. 3 shows another embodiment of the invention.

本例は前例のように光導波路の両端にそれぞれ
入力用光フアイバ15A及び出力用光フアイバ1
5Bを接続するかわりに、光導波路11の一方の
端面にアルミニウム蒸着膜等の反射体18を密着
して設け、他方の導波路端に入出力兼用の光フア
イバ15を接続したものであり、他の構造は前述
実施例と同様である。
In this example, as in the previous example, there are an input optical fiber 15A and an output optical fiber 1 at both ends of the optical waveguide.
5B, a reflector 18 such as an aluminum vapor-deposited film is provided in close contact with one end face of the optical waveguide 11, and an optical fiber 15 for both input and output is connected to the other end of the waveguide. The structure of is similar to that of the previous embodiment.

本例構造は、導波路11の往復両行程で光吸収
層12によるエバネツセント光吸収減衰を受ける
ので、前述実施例構造に比べ素子をより小型化で
き、また同一の大きさな素子で検知感度がより向
上するという利点がある。
The structure of this example undergoes evanescent light absorption and attenuation by the light absorption layer 12 during both the reciprocating strokes of the waveguide 11, so the element can be made smaller compared to the structure of the previous example, and the detection sensitivity can be improved with the same size element. It has the advantage of being even better.

次に本発明の具体的数値例について説明する。 Next, specific numerical examples of the present invention will be explained.

基板10としてLiNbO3を用い、Tiを熱拡散さ
せて基板10中に光導波路11を形成し、この光
導波路11の露出面上に光吸収層12として
WO3薄膜を1μmの厚さに真空蒸着した。
Using LiNbO 3 as the substrate 10, an optical waveguide 11 is formed in the substrate 10 by thermally diffusing Ti, and a light absorption layer 12 is formed on the exposed surface of the optical waveguide 11.
A WO 3 thin film was vacuum deposited to a thickness of 1 μm.

WO3は純度99.99%のペレツトを用い、アルミ
ナでカートされたW線ルツボを用いて抵抗加熱蒸
着した。
WO 3 was deposited using resistance heating using pellets with a purity of 99.99% using a W-wire crucible carted with alumina.

蒸着条件は、酸素圧力1×10-4Torr、イオン
化用高周波電力200W、イオン加速電圧−500Vと
した 得られたWO3薄膜はアモルフアスであり無色
透明であつた。上記WO3膜上に水素吸着層13
としてPdを100オングストロームの厚さに電子線
加熱蒸着法で付着させた。
The deposition conditions were an oxygen pressure of 1×10 −4 Torr, high-frequency power for ionization of 200 W, and ion acceleration voltage of −500 V. The obtained WO 3 thin film was amorphous and colorless and transparent. Hydrogen adsorption layer 13 on the above WO 3 film
Pd was deposited to a thickness of 100 angstroms by electron beam heating evaporation.

次にこの水素吸着層13上に水素選択透過被膜
14としてSiO2膜を電子線加熱蒸着法で付着さ
せた。蒸着源として純度99.99%のSiOペレツトを
用い、酸素圧力1×10-4Torr、イオン化用高周
波電力50W、イオン加速電圧−500Vの条件下で
膜厚500オングストロームのSiO2膜14が得られ
た。
Next, a SiO 2 film was deposited on the hydrogen adsorption layer 13 as a hydrogen selective permeation film 14 by electron beam heating evaporation. Using SiO pellets with a purity of 99.99% as a deposition source, a SiO 2 film 14 with a thickness of 500 angstroms was obtained under conditions of an oxygen pressure of 1×10 -4 Torr, a high frequency power for ionization of 50 W, and an ion acceleration voltage of −500 V.

上記のようにして作成したセンサ素子の導波路
11に接続した光フアイバを通して波長1.3μmの
半導体レーザ光を入射させ、出力側の光フアイバ
端に接続した光検出器で出力光量を測定したとこ
ろ、10〜2000ppmの水素ガス濃度範囲を約±5%
の精度で測定することができた。
Semiconductor laser light with a wavelength of 1.3 μm was introduced through the optical fiber connected to the waveguide 11 of the sensor element created as described above, and the output light amount was measured with a photodetector connected to the end of the optical fiber on the output side. Approximately ±5% hydrogen gas concentration range from 10 to 2000 ppm
It was possible to measure with an accuracy of

また上記センサ素子を温度50℃、湿度90%の条
件下に6ケ月間放置した後に水素ガス濃度測定を
行なつたところ、検知特性の低下はほとんど認め
られなかつた。これに対し、保護被膜14の無い
従来型のセンサ素子に上記環境テストを施した後
水素ガス濃度を測定したところ、検知特性に大幅
な低下が認められた。
Further, when the hydrogen gas concentration was measured after the sensor element was left at a temperature of 50° C. and a humidity of 90% for 6 months, almost no deterioration in the detection characteristics was observed. On the other hand, when the conventional sensor element without the protective coating 14 was subjected to the above environmental test and the hydrogen gas concentration was measured, a significant decrease in the detection characteristics was observed.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、水素選択透過性の被膜で水素
ガス吸着層を保護被覆しているので、被検知物で
ある水素ガスは従来と同様に自由にセンサの吸着
層と接触すると同時に、吸着層及び光吸収層の反
応に悪影響を及ぼす他の成分、特に水蒸気の透過
が阻止され、したがつて長期的に亘り安定した水
素検知性能を維持することができる。
According to the present invention, since the hydrogen gas adsorption layer is protectively coated with a hydrogen selectively permeable coating, hydrogen gas, which is the object to be detected, can freely contact the adsorption layer of the sensor as in the past, and at the same time The permeation of other components, especially water vapor, which adversely affect the reaction of the light absorption layer is prevented, and therefore stable hydrogen detection performance can be maintained over a long period of time.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示す側断面図、第
2図は同平面図、第3図は本発明の他の実施例を
示す側断面図、第4図は従来の光センサを示す側
断面図である。 10……基板、11……光導波路、12……光
吸収層、13……水素吸着層、14……水素選択
透過性保護被膜、15,15A,15B……光フ
アイバ、16……光源装置、17……光検出器、
18……反射体。
Fig. 1 is a side sectional view showing one embodiment of the present invention, Fig. 2 is a plan view of the same, Fig. 3 is a side sectional view showing another embodiment of the invention, and Fig. 4 is a conventional optical sensor. FIG. 10... Substrate, 11... Optical waveguide, 12... Light absorption layer, 13... Hydrogen adsorption layer, 14... Hydrogen selectively permeable protective coating, 15, 15A, 15B... Optical fiber, 16... Light source device , 17... photodetector,
18...Reflector.

Claims (1)

【特許請求の範囲】 1 光導波路に接して水素との反応により光吸収
係数が変化する誘電体膜を設けるとともに該膜上
に水素ガスを解離吸着する金属膜を設け、前記導
波路出射光の光量変化で水素を検知するようにし
た水素検知光センサにおいて、前記金属膜表面
を、水素ガスを透過し且つ少なくとも水蒸気に対
し不透過性を有する選択透過被膜で保護被覆した
ことを特徴とする水素検知光センサ。 2 前記選択透過被膜はSiO2の蒸着膜である特
許請求の範囲第1項記載の水素検知光センサ。
[Claims] 1. A dielectric film whose light absorption coefficient changes due to reaction with hydrogen is provided in contact with the optical waveguide, and a metal film that dissociates and adsorbs hydrogen gas is provided on the film, so that the light emitted from the waveguide is A hydrogen detection optical sensor configured to detect hydrogen based on changes in the amount of light, characterized in that the surface of the metal film is protectively coated with a selectively permeable coating that is permeable to hydrogen gas and impermeable to at least water vapor. Detection light sensor. 2. The hydrogen detection optical sensor according to claim 1, wherein the selective transmission film is a vapor deposited film of SiO 2 .
JP61011093A 1986-01-23 1986-01-23 Optical sensor for detecting hydrogen Granted JPS62170840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61011093A JPS62170840A (en) 1986-01-23 1986-01-23 Optical sensor for detecting hydrogen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61011093A JPS62170840A (en) 1986-01-23 1986-01-23 Optical sensor for detecting hydrogen

Publications (2)

Publication Number Publication Date
JPS62170840A JPS62170840A (en) 1987-07-27
JPH0513458B2 true JPH0513458B2 (en) 1993-02-22

Family

ID=11768379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61011093A Granted JPS62170840A (en) 1986-01-23 1986-01-23 Optical sensor for detecting hydrogen

Country Status (1)

Country Link
JP (1) JPS62170840A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62251637A (en) * 1986-04-24 1987-11-02 Hochiki Corp Hydrogen sensor
DE4227665A1 (en) * 1992-08-21 1994-02-24 Boehringer Mannheim Gmbh Analysis element for the analysis of a liquid sample
DE4303858C2 (en) * 1993-02-10 1995-08-31 Draegerwerk Ag Device for the colorimetric detection of gaseous and / or vaporous components of a gas mixture due to the discoloration of a reaction zone arranged in a channel
AUPM551994A0 (en) * 1994-05-09 1994-06-02 Unisearch Limited Method and device for optoelectronic chemical sensing
JP2007248424A (en) * 2006-03-20 2007-09-27 Atsumi Tec:Kk Hydrogen sensor
US7489835B1 (en) * 2008-03-28 2009-02-10 General Electric Company Sensing system with fiber gas sensor
KR100923104B1 (en) 2008-09-19 2009-10-27 전남대학교산학협력단 Optical Fiber Gas Sensor Using Ultrasonic Wave
WO2010032979A2 (en) * 2008-09-19 2010-03-25 전남대학교산학협력단 Optical fiber sensor and optical fiber gas sensor which use ultrasonic waves

Also Published As

Publication number Publication date
JPS62170840A (en) 1987-07-27

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