JPH0517308B2 - - Google Patents
Info
- Publication number
- JPH0517308B2 JPH0517308B2 JP19430983A JP19430983A JPH0517308B2 JP H0517308 B2 JPH0517308 B2 JP H0517308B2 JP 19430983 A JP19430983 A JP 19430983A JP 19430983 A JP19430983 A JP 19430983A JP H0517308 B2 JPH0517308 B2 JP H0517308B2
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- film
- main
- press
- interface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 claims description 39
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 description 46
- 239000010408 film Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はCr／Cuを連続して成膜する機能を有
するスパツタリング方法に係り、特にCrとCuの
二層構造において、CrとCuの接着性を得るのに
好適なスパツタリングシーケンスを有するスパツ
タリング方法に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a sputtering method that has the function of continuously forming a Cr/Cu film, and particularly in a two-layer structure of Cr and Cu, the adhesion between Cr and Cu is The present invention relates to a sputtering method having a sputtering sequence suitable for obtaining.
従来のスパツタリング方法は、CrとCuを連続
してスパツタリング法により成膜する場合、第１
図に示すように、Crスパツタの後にCuプレスパ
ツタを行い、Cu本スパツタを連続して行うこと
により、Cu本スパツタの直前にCr本スパツタ時
にCuターゲツト上に被着したCrを削りとり、Cu
ターゲツトの表面清浄化を行うシーケンスとなつ
ているので、Cu本スパツタにより基板上にCu膜
を成膜する前に成膜されたCr膜がCuプレスパツ
タ中に熱などにより酸化する等の現象のために、
Cr膜上に成膜されたCu膜との界面において、Cr
とCuの接着性が充分に得られないという欠点が
ある。
In the conventional sputtering method, when Cr and Cu are successively deposited by sputtering, the first
As shown in the figure, by performing Cu press sputtering after Cr sputtering and then performing Cu main sputtering in succession, the Cr deposited on the Cu target during the Cr main sputtering is removed immediately before the Cu main sputtering, and the Cu
Since the sequence is to clean the surface of the target, it is possible that the Cr film formed before the Cu film is deposited on the substrate by Cu main sputtering may be oxidized due to heat during Cu press sputtering. To,
At the interface with the Cu film formed on the Cr film, Cr
The disadvantage is that sufficient adhesion between copper and copper cannot be obtained.
本発明の目的はCrとCuを連続して成膜するス
パツタリング方法において、CrとCuの界面にお
ける酸化物等の生成を防止し、CrCuの間に充分
な接着性をもたせることが可能なCr／Cuスパツ
タリング方法を提供することにある。
The purpose of the present invention is to prevent the formation of oxides, etc. at the interface between Cr and Cu, and to provide sufficient adhesion between Cr/Cu in a sputtering method for continuously forming Cr and Cu films. The object of the present invention is to provide a Cu sputtering method.
本発明は、Cr／Cu界面での膜剥理で観察され
るCr／Cu界面の酸化物生成が膜剥離の原因と考
え、酸化物生成原因をCr本スパツタとCu本スパ
ツタの間にCuプレスパツタが入ることによるCr
膜の熱的酸化と考え、これを防止するためにCr
本スパツタ中に、CuターゲツトにCrが被着して
もCrとCuの界面の接着性に影響がないことに注
目し、Cr本スパツタ後にすぐにCu本スパツタを
実施するシーケンスを考えだしたものである。
The present invention considers that the oxide formation at the Cr/Cu interface, which is observed when the film peels off at the Cr/Cu interface, is the cause of the film peeling, and the reason for the oxide formation is the Cu press sputtering between the Cr main spatter and the Cu main spatter. Cr due to entering
This is considered to be thermal oxidation of the film, and Cr is added to prevent this.
We focused on the fact that even if Cr was deposited on the Cu target during this sputtering, it did not affect the adhesion at the interface between Cr and Cu, and we devised a sequence in which Cu main sputtering was performed immediately after Cr main sputtering. It is.
以下、本発明の一実施例を薄膜感熱記録ヘツド
の例で説明する。
An embodiment of the present invention will be explained below using an example of a thin film thermosensitive recording head.
薄膜感熱記録ヘツドの第２層配線は第２図に示
すようにAlからなる第一層配線４との層間絶縁
層３上に形成され第一層配線４、層間絶縁膜３と
第層配線のCu膜１Cuとの接着性を得るために該
Cu膜の下に第２層配線のCu膜２を形成する。こ
の第２層配線Cr／Cuはスパツタリング法により
同一バツチで基板全面に成膜し、その後ホトエツ
チングにより第２層配線となる。 As shown in FIG. 2, the second layer wiring of the thin film thermosensitive recording head is formed on the interlayer insulating layer 3 with the first layer wiring 4 made of Al. Cu film 1 In order to obtain adhesion with Cu,
A Cu film 2 of a second layer wiring is formed under the Cu film. The second layer wiring Cr/Cu is formed in one batch over the entire surface of the substrate by sputtering, and then photo-etched to form the second layer wiring.
本実施例では、このCr／Cuをスパツタリング
法により作成する際、スパツタシーケンスを第３
図のようにしたものであり、Cr、Cuのターゲツ
トの清浄化を目的としたプレスパツタを、Cuプ
レスパツタ、Crプレスパツタの順に行ない、そ
の後Cr本スパツタ、Cu本スパツタをプレスパツ
タを介さずに行ない基板上にCr／Cuを連続して
成膜する。本実施例によれば、CrとCuの界面の
不純物膜の生成を時間的に防止でき、Cr成膜後
のCr膜の酸化等を防止できるため、CrとCuとの
接着性を得るのに効果がある。 In this example, when creating this Cr/Cu by the sputtering method, the sputtering sequence was
As shown in the figure, press sputtering for the purpose of cleaning Cr and Cu targets is performed in the order of Cu press sputtering and Cr press sputtering, and then Cr main sputtering and Cu main sputtering are performed on the substrate without using the press sputtering. A Cr/Cu film is successively formed. According to this example, it is possible to temporally prevent the formation of an impurity film at the interface between Cr and Cu, and to prevent the oxidation of the Cr film after the Cr film is formed. effective.
本発明によれば、CrとCuをプレスパツタを介
さずに連続してスパツタすることにより、不純物
のCr／Cu界面での生成を防止できるので、Cr／
Cu界面の接着性を得るのに効果があり、Cr／Cu
形成後の次工程の熱履歴等による接着力の低下
や、外部環境等による接着力の低下のない安定し
たCr／Cuを成膜するのに効果がある。
According to the present invention, by sputtering Cr and Cu continuously without using a press sputter, it is possible to prevent impurities from forming at the Cr/Cu interface.
It is effective in obtaining adhesion at the Cu interface, and Cr/Cu
It is effective in forming a stable Cr/Cu film that does not deteriorate in adhesive strength due to heat history in the next process after formation or due to external environment.
さらにCrとCuを比較的安価なバツチ構成のス
パツタリング装置で連続で成膜できるという効果
がある。 Another advantage is that Cr and Cu can be continuously deposited using a relatively inexpensive batch sputtering device.
第１図は、従来例のCr／Cuスパツタシーケン
ス図、第２図は、薄膜感熱記録ヘツドの断面図、
第３図は、本発明の一実施例によるCr／Cuスパ
ツタシーケンス図である。
１……第２層配線Cu膜、２……第２層配線Cr
膜、３……層間絶縁層、４……第１層配線Al膜。
Figure 1 is a conventional Cr/Cu sputtering sequence diagram, Figure 2 is a sectional view of a thin film thermosensitive recording head,
FIG. 3 is a Cr/Cu sputtering sequence diagram according to an embodiment of the present invention. 1... Second layer wiring Cu film, 2... Second layer wiring Cr
Film, 3... Interlayer insulating layer, 4... First layer wiring Al film.
Claims (1)
ツタリング法において、Cuプレスパツタ、Crプ
レスパツタの順にプレスパツタを行い、その後
Cr本スパツタ、Cu本スパツタの順に本スパツタ
を行うシーケンスを設けたことを特徴とする
Cr／Cuスパツタリング方法。1 In the sputtering method in which Cr and Cu are continuously deposited in the same batch, press sputtering is performed in the order of Cu press sputtering and Cr press sputtering, and then
It is characterized by providing a sequence in which main sputtering is performed in the order of Cr main sputtering and Cu main sputtering.
Cr/Cu sputtering method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19430983A JPS6089566A (en) | 1983-10-19 | 1983-10-19 | Apparatus for sputtering cr and cu |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19430983A JPS6089566A (en) | 1983-10-19 | 1983-10-19 | Apparatus for sputtering cr and cu |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6089566A JPS6089566A (en) | 1985-05-20 |
| JPH0517308B2 true JPH0517308B2 (en) | 1993-03-08 |
Family
ID=16322459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19430983A Granted JPS6089566A (en) | 1983-10-19 | 1983-10-19 | Apparatus for sputtering cr and cu |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6089566A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4917963A (en) * | 1988-10-28 | 1990-04-17 | Andus Corporation | Graded composition primer layer |
| JP5245772B2 (en) * | 2008-12-01 | 2013-07-24 | 日立電線株式会社 | Surface-treated metal material and manufacturing method thereof |
-
1983
- 1983-10-19 JP JP19430983A patent/JPS6089566A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6089566A (en) | 1985-05-20 |
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