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JPH0518461B2 - - Google Patents
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JPH0518461B2 - - Google Patents

Info

Publication number
JPH0518461B2
JPH0518461B2 JP7697886A JP7697886A JPH0518461B2 JP H0518461 B2 JPH0518461 B2 JP H0518461B2 JP 7697886 A JP7697886 A JP 7697886A JP 7697886 A JP7697886 A JP 7697886A JP H0518461 B2 JPH0518461 B2 JP H0518461B2
Authority
JP
Japan
Prior art keywords
pellet
sheet
pellets
semiconductor
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP7697886A
Other languages
Japanese (ja)
Other versions
JPS62232934A (en
Inventor
Shinji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP61076978A priority Critical patent/JPS62232934A/en
Publication of JPS62232934A publication Critical patent/JPS62232934A/en
Publication of JPH0518461B2 publication Critical patent/JPH0518461B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/015Manufacture or treatment of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07511Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07551Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造方法に関し、特に半
導体ペレツト分離後の組立工程中におけるペレツ
トの表面保護方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for protecting the surface of semiconductor pellets during an assembly process after separation.

〔従来の技術〕[Conventional technology]

一般に半導体装置の製造は、ウエーハをダイシ
ングしてペレツトに分離後、ペレツト表面の外観
チエツクを行ない、不良ペレツトを除去し、良品
ペレツトをリードフレームのダイスステージにダ
イボンドし、電極部とリードフレームのインナー
リードの間を金属細線で接続したのち、樹脂ある
いはガラス等で封止している。
Generally, in the manufacture of semiconductor devices, after dicing a wafer and separating it into pellets, the appearance of the pellet surface is checked, defective pellets are removed, and the good pellets are die-bonded to the die stage of the lead frame, and the electrode parts and the inner surface of the lead frame are bonded. The leads are connected with thin metal wires and then sealed with resin or glass.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、上記工程中、ペレツト表面は作
業環境中のごみや汚れ、あるいは機械からのご
み、汚れ、人間からのごみ、汚れのために、素子
に不具合が生じ、歩留の低下が恒常的に発生して
いる。
However, during the above process, the pellet surface is exposed to dust and dirt in the working environment, dust and dirt from machines, and dust and dirt from humans, which causes defects in the elements and a constant drop in yield. are doing.

〔問題点を解決するための手段〕[Means for solving problems]

本発明はこのような問題点に解決するためにな
されたもので、半導体ウエーハからペレツトに分
離後、ペレツトの電極パツド以外の表面に耐熱性
シートを貼り付け、ダイボンデイング及びワイヤ
ボンデイングを行なう。
The present invention was made to solve these problems, and after separating a semiconductor wafer into pellets, a heat-resistant sheet is attached to the surface of the pellets other than the electrode pads, and die bonding and wire bonding are performed.

〔実施例〕〔Example〕

次に本発明の実施例を図面を用いて説明する。 Next, embodiments of the present invention will be described using the drawings.

第1図ないし第4図は、本発明の一実施例を説
明するための工程順の側面図(第1図と第2図に
部分拡大平面図を含む)である。まず、第1図の
ように、ウエーハから個々の半導体ペレツトに分
離されたペレツト1は、エレクトロンシート3上
に適当な間隔で並べられている。各ペレツト1に
は、同図bの部分拡大平面図に示すように、ボン
デイングパツド2を有する。次に第2図a,bで
示すように、ペレツトサイズに応じて個片に切断
された耐熱性シート、例えばポリイミドフイルム
4を、シート押さえステージ5にて貼り付け治具
6により、ペレツト上の電極パツド部2を除く表
面に貼り付ける。次に第3図に示すように、ペレ
ツトをリードフレームのダイステージ8上に固着
する。さらに、第4図に示すように、電極パツド
部とリードフレームのインナーリード部9を金属
細線10でボンデイングする。その後適当なシー
ト剥離機にてシートを剥離し、樹脂封止を行う。
1 to 4 are side views (partially enlarged plan views are included in FIGS. 1 and 2) of steps for explaining an embodiment of the present invention. First, as shown in FIG. 1, individual semiconductor pellets 1 separated from a wafer are arranged on an electron sheet 3 at appropriate intervals. Each pellet 1 has a bonding pad 2, as shown in the partially enlarged plan view of FIG. Next, as shown in FIGS. 2a and 2b, a heat-resistant sheet such as a polyimide film 4 cut into individual pieces according to the pellet size is attached to the electrodes on the pellet using a pasting jig 6 on a sheet holding stage 5. Paste it on the surface excluding the pad part 2. Next, as shown in FIG. 3, the pellet is fixed onto the die stage 8 of the lead frame. Furthermore, as shown in FIG. 4, the electrode pad portion and the inner lead portion 9 of the lead frame are bonded with a thin metal wire 10. Thereafter, the sheet is peeled off using a suitable sheet peeling machine, and resin sealing is performed.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、ペレツトは組立工程中、表面
の主要部分が保護されているため、作業環境中の
ごみや汚れの付着がなく、作業者による汚染もな
くなるため、素子の不具合は極端に減少する。又
シートとしてダイボンデイングやボンデイング温
度に耐え得る耐熱性シートを使用するので、シー
トによる不具合は生じない。なお、本発明の実施
例としてリードフレームを使用する場合を説明し
たが、ガラスケースあるいはセラミツクケースを
使用する場合も同様である。
According to the present invention, the main part of the surface of the pellet is protected during the assembly process, so there is no adhesion of dust or dirt in the working environment, and there is no contamination by workers, resulting in an extreme reduction in device defects. do. Furthermore, since a heat-resistant sheet that can withstand die bonding and bonding temperatures is used as the sheet, no defects will occur due to the sheet. Although the case where a lead frame is used has been described as an embodiment of the present invention, the same applies when a glass case or a ceramic case is used.

【図面の簡単な説明】[Brief explanation of drawings]

第1図a、第2図a、第3図および第4図は本
発明の一実施例を説明するための工程順の側面
図、第1図bおよび第2図bはそれぞれ、第1図
a、第2図aに示す半導体ペレツトの部分拡大平
面図である。 1……半導体ペレツト、2……ボンデイングパ
ツド、3……エレクトロンシート、4……表面保
護シート、5……押さえステージ、6……押さえ
治具、8……ダイステージ、9……インナーリー
ド、10……金属細線。
1a, 2a, 3 and 4 are side views of the process order for explaining one embodiment of the present invention, and FIGS. 1b and 2b are respectively the same as those shown in FIG. 2a is a partially enlarged plan view of the semiconductor pellet shown in FIG. 2a; FIG. 1... Semiconductor pellet, 2... Bonding pad, 3... Electron sheet, 4... Surface protection sheet, 5... Holding stage, 6... Holding jig, 8... Die stage, 9... Inner lead , 10... Fine metal wire.

Claims (1)

【特許請求の範囲】[Claims] 1 半導体ウエーハをペレツトに分離後、個々の
ペレツトの電極パツド以外の表面に耐熱性シート
を貼り付けた後、ダイボンデイング及びワイヤボ
ンデイングを行なうことを特徴とする半導体装置
の製造方法。
1. A method for manufacturing a semiconductor device, which comprises separating a semiconductor wafer into pellets, pasting a heat-resistant sheet on the surface of each pellet other than the electrode pads, and then performing die bonding and wire bonding.
JP61076978A 1986-04-02 1986-04-02 Manufacture of semiconductor device Granted JPS62232934A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61076978A JPS62232934A (en) 1986-04-02 1986-04-02 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61076978A JPS62232934A (en) 1986-04-02 1986-04-02 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS62232934A JPS62232934A (en) 1987-10-13
JPH0518461B2 true JPH0518461B2 (en) 1993-03-12

Family

ID=13620870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61076978A Granted JPS62232934A (en) 1986-04-02 1986-04-02 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS62232934A (en)

Also Published As

Publication number Publication date
JPS62232934A (en) 1987-10-13

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