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JPH051897B2 - - Google Patents
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JPH051897B2 - - Google Patents

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Publication number
JPH051897B2
JPH051897B2 JP18750684A JP18750684A JPH051897B2 JP H051897 B2 JPH051897 B2 JP H051897B2 JP 18750684 A JP18750684 A JP 18750684A JP 18750684 A JP18750684 A JP 18750684A JP H051897 B2 JPH051897 B2 JP H051897B2
Authority
JP
Japan
Prior art keywords
hydrogen
gas
containing compound
sensor element
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP18750684A
Other languages
Japanese (ja)
Other versions
JPS6166145A (en
Inventor
Kentaro Ito
Tetsuya Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hochiki Corp
Original Assignee
Hochiki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hochiki Corp filed Critical Hochiki Corp
Priority to JP18750684A priority Critical patent/JPS6166145A/en
Publication of JPS6166145A publication Critical patent/JPS6166145A/en
Publication of JPH051897B2 publication Critical patent/JPH051897B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/75Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated
    • G01N21/77Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator
    • G01N21/78Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour
    • G01N21/783Systems in which material is subjected to a chemical reaction, the progress or the result of the reaction being investigated by observing the effect on a chemical indicator producing a change of colour for analysing gases

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、水素ガス及び含水素化合物ガス以外
の還元性ガス、例えばCOガス等を高い選択性を
もつて検出するガス検出装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a gas detection device that detects reducing gases other than hydrogen gas and hydrogen-containing compound gas, such as CO gas, with high selectivity.

(従来技術) 従来、還元性ガスを検出するガス検出装置とし
ては、還元性ガス分子の吸着によつて電気的特
性、例えば抵抗値が変化するセンサ素子を単体で
使用したものが知られているが、還元性ガスの内
の特定のガス、例えばCOガスのみを検出するた
めには、素子の使用温度によつてガスの選択性が
変ることから、使用温度の異なつた複数のセンサ
素子を使用し、これらのセンサ素子の検出出力か
ら特定のガスに対する選択性をもたせるようにし
ている。
(Prior art) Conventionally, gas detection devices for detecting reducing gases have been known to use a single sensor element whose electrical characteristics, such as resistance, change due to the adsorption of reducing gas molecules. However, in order to detect only a specific reducing gas, such as CO gas, multiple sensor elements with different operating temperatures are used because the gas selectivity changes depending on the operating temperature of the element. However, the detection outputs of these sensor elements are made to have selectivity to a specific gas.

(発明が解決しようとする問題点) しかしながら、使用温度を変えた複数のセンサ
素子の組み合せを行なつても、水素及び含水素化
合物ガスの補償を充分に行なうことができず、水
素ガスまたは含水素化合物ガスに干渉されて検出
対象となる特定の還元性ガス、例えばCOガスの
選択性を向上することが困難であつた。
(Problems to be Solved by the Invention) However, even if a plurality of sensor elements with different operating temperatures are combined, hydrogen and hydrogen-containing compound gas cannot be sufficiently compensated for. It has been difficult to improve the selectivity of a specific reducing gas to be detected, such as CO gas, which is interfered with by hydrogen compound gas.

(問題点を解決するための手段) 本発明は、このような従来の問題点に鑑みてな
されたもので、水素ガス及び含水素化合物ガスの
以外の還元性ガスを高い選択性をもつて検出する
ことを目的とし、パラジウムPd等の触媒金属と
3酸化タングステン等の固体化合物の積層構造を
もち水素または含水素化合物ガス(以下「水素・
含水素化合物ガス」という)の接触で光吸収特性
が変化する水素・含水素化合物ガスに対して極め
て高い選択性をもつたセンサ素子を補償素子とし
て使用し、従来の選択性をもたない還元ガスのセ
ンサ素子の検出出力から水素・含水素化合物ガス
の影響を取り除くことで、水素・含水素化合物ガ
ス以外の還元性ガスの検出に高い選択性をもたせ
るようにしたものである。
(Means for Solving the Problems) The present invention has been made in view of such conventional problems, and is a method for detecting reducing gases other than hydrogen gas and hydrogen-containing compound gases with high selectivity. It has a layered structure of catalytic metals such as palladium Pd and solid compounds such as tungsten trioxide to produce hydrogen or hydrogen-containing compound gas (hereinafter referred to as "hydrogen/hydrogen-containing gas").
A sensor element with extremely high selectivity for hydrogen and hydrogen-containing compound gases, whose light absorption characteristics change upon contact with hydrogen-containing compound gases (referred to as "hydrogen-containing compound gas"), is used as a compensation element to achieve reduction that does not have conventional selectivity. By removing the influence of hydrogen and hydrogen-containing compound gas from the detection output of the gas sensor element, high selectivity is achieved in the detection of reducing gases other than hydrogen and hydrogen-containing compound gas.

(実施例) 第1図は本発明の一実施例を検出回路部と共に
示した説明図である。
(Embodiment) FIG. 1 is an explanatory diagram showing an embodiment of the present invention together with a detection circuit section.

まず構成を説明すると、1は還元性ガスを検出
するセンサ素子であり、水素及び含水素化合物ガ
スに対し光吸収特性が変化する機能を有する。即
ち、センサ素子はパラジウムPdを使用した触媒
金属半透明膜2と、3酸化タングステンWO3
使用したクロミツク材料膜3と、ITOを使用した
透明導電膜4の積層構造をもち、この触媒金属半
透明膜2、クロミツク材料膜3及び透明導電膜4
の積層構造でなるセンサ素子1の製造は、ガラス
を使用した透明基板5の上にITOの透明導電膜4
を所定の厚さに蒸着し、続いてWO3でなるクロ
ミツク材料膜3を所定の厚さに蒸着し、最終的に
クロミツク材料膜3の上にPdでなる触媒金属半
透明膜2を透明性を保つ程度に薄く蒸着すること
で作り出している。
First, the configuration will be described. Reference numeral 1 is a sensor element that detects a reducing gas, and has a function of changing light absorption characteristics with respect to hydrogen and hydrogen-containing compound gas. That is, the sensor element has a laminated structure of a catalytic metal semitransparent film 2 using palladium Pd, a chromic material film 3 using tungsten trioxide WO3 , and a transparent conductive film 4 using ITO. Transparent film 2, chromic material film 3, and transparent conductive film 4
The manufacturing of the sensor element 1, which has a laminated structure, involves placing an ITO transparent conductive film 4 on a transparent substrate 5 made of glass.
is vapor-deposited to a predetermined thickness, then a chromic material film 3 made of WO 3 is vapor-deposited to a predetermined thickness, and finally a catalytic metal translucent film 2 made of Pd is transparently deposited on the chromic material film 3. It is created by depositing it thinly enough to maintain the

このセンサ素子1は水素ガスあるいは含水素化
合物ガス(NH3、H2S等)が接触したとき、次
のようにして光吸収特性が変化する。
When this sensor element 1 comes into contact with hydrogen gas or hydrogen-containing compound gas (NH 3 , H 2 S, etc.), its light absorption characteristics change as follows.

例えば、水素ガスが接触したとすると、触媒金
属半透明膜2により水素が吸着解離されて水素原
子を触媒金属半透明膜2の中に生成し、この水素
原子が固体化合物としてのクロミツク材料膜3の
中に注入される。触媒金属半透明膜2によるプロ
トンH+の注入を受けたクロミツク材料膜3の固
体化合物WO3は、還元されて色中心密度が変化
する。即ち、クロミツク材料膜3としてWO3
使用したときにはプロトンH+の注入による色中
心密度の変化で光吸収が増大し、その増大の度合
はダス濃度の増加に応じて強くなる。勿論、水素
ガスがなくなれば固体化合物WO3に注入された
プロトンH+が再び抜け出して光吸収を減じ、元
のより透明な状態に戻る。
For example, when hydrogen gas comes into contact with the catalytic metal semitransparent film 2, hydrogen is adsorbed and dissociated to generate hydrogen atoms in the catalytic metal semitransparent film 2, and these hydrogen atoms form the chromic material film 3 as a solid compound. injected into the. The solid compound WO 3 in the chromic material film 3 that has received the injection of protons H + by the catalytic metal semitransparent film 2 is reduced and its color center density changes. That is, when WO 3 is used as the chromic material film 3, the light absorption increases due to a change in the color center density due to the injection of protons H + , and the degree of the increase becomes stronger as the dust concentration increases. Of course, once the hydrogen gas is gone, the protons H + injected into the solid compound WO 3 escape again, reducing light absorption and returning to its original, more transparent state.

このようなセンサ素子1における光吸収現象は
水素ガスの他にNH3、H2S、SiH4等の含水素化
合物ガスの接触に対しても同様である。
Such a light absorption phenomenon in the sensor element 1 is similar to contact with hydrogen-containing compound gases such as NH 3 , H 2 S, and SiH 4 in addition to hydrogen gas.

一方、センサ素子1は水素・含水素化合物ガス
を含む還元性ガスの接触に対しクロミツク材料膜
3の両側に形成した電極としての触媒金属半透明
膜2と透明導電膜4との間の電気的特性、具体的
には抵抗値が還元性ガスの濃度に応じて変化し、
この抵抗値の変化から電気的に水素・含水素化合
物ガスを含む還元性ガスを検出することができ
る。
On the other hand, the sensor element 1 is electrically connected between a catalytic metal semitransparent film 2 and a transparent conductive film 4 as electrodes formed on both sides of a chromic material film 3 in response to contact with a reducing gas containing hydrogen and hydrogen-containing compound gas. The characteristics, specifically the resistance value, change depending on the concentration of reducing gas,
Reducing gas containing hydrogen and hydrogen-containing compound gas can be electrically detected from this change in resistance value.

水素・含水素化合物ガスの接触に対し光吸収特
性が変化するセンサ素子1の一方には、センサ素
子1の光吸収の変化を光学的に検出するため、光
源としての発光素子6が設けられ、発光用電源7
による発光駆動を受けてセンサ素子1に検出光を
入射している。また、センサ素子1の反対側には
センサ素子1を透過した光を受光して電気信号に
変換する受光素子8が設けられ、水素ガスまたは
含水素化合物ガスの接触でセンサ素子1における
クロミツク材料膜3の光吸収特性の変化で減衰し
た透過光を受光して電気信号に変換している。受
光素子8の受光電流は水素・含水素化合物ガス検
出回路9に与えられ、透過光の減衰に応じた水素
ガス及びまたは含水素化合物ガスのガス濃度を検
出する。
A light emitting element 6 as a light source is provided on one side of the sensor element 1 whose light absorption characteristics change upon contact with hydrogen/hydrogen-containing compound gas in order to optically detect changes in light absorption of the sensor element 1. Light emitting power supply 7
Detection light is incident on the sensor element 1 in response to light emission drive by the sensor element 1 . Further, on the opposite side of the sensor element 1, a light receiving element 8 is provided which receives the light transmitted through the sensor element 1 and converts it into an electric signal. It receives transmitted light that has been attenuated due to the change in the light absorption characteristics in step 3 and converts it into an electrical signal. The light-receiving current of the light-receiving element 8 is applied to a hydrogen/hydrogen-containing compound gas detection circuit 9, which detects the gas concentration of hydrogen gas and/or hydrogen-containing compound gas according to the attenuation of the transmitted light.

一方、センサ素子1の触媒金属半透明膜2及び
透明導電膜4に対しては電源10よりセンサ素子
1の抵抗値を検出するための電源電圧が還元性ガ
ス検出回路11を介して印加されており、電源1
0よりセンサ素子1の抵抗値に応じた検出電流を
流し、還元性ガスが接触すると抵抗値の変化に応
じて還元性ガス検出回路を流れる検出電流が変化
することから、この検出電流の変化に応じて水
素・含水素化合物ガスを含む還元性ガスのガス濃
度を検出している。12は水素・含水素化合物ガ
ス、例えばCOガスを検出するための判断部であ
り、水素・含水素化合物ガス検出回路9と還元性
ガス検出回路10の各検出出力に基づいてCOガ
スの検出濃度を判断する。
On the other hand, a power supply voltage for detecting the resistance value of the sensor element 1 is applied from a power supply 10 to the catalytic metal semitransparent film 2 and the transparent conductive film 4 of the sensor element 1 via the reducing gas detection circuit 11. Power supply 1
A detection current corresponding to the resistance value of the sensor element 1 is passed from zero to Accordingly, the gas concentration of reducing gases including hydrogen and hydrogen-containing compound gases is detected. Reference numeral 12 denotes a determination unit for detecting hydrogen/hydrogen-containing compound gas, such as CO gas, and determines the detected concentration of CO gas based on the detection outputs of the hydrogen/hydrogen-containing compound gas detection circuit 9 and the reducing gas detection circuit 10. to judge.

次に、第1図の実施例による還元性ガスの検出
動作を説明する。
Next, the reducing gas detection operation according to the embodiment shown in FIG. 1 will be explained.

まず、センサ素子1に接触した還元性ガスが水
素ガス及びCOガスを含む還元性ガスであつたと
すると、水素ガスの接触を受けてセンサ素子1に
おけるクロミツク材料膜3の光吸収が変化し、ク
ロミツク材料膜3としてはWO3を使用している
ことから、水素ガスのガス濃度に応じて光吸収が
増大し、発光素子6からの透過光がセンサ素子1
で吸収され、受光水素8に入射する透過光量が減
衰する。このため、水素・含水素化合物検出回路
9は受光素子8による受光信号の低下から水素ガ
スのガス濃度を検出し判断部12に出力する。一
方、水素ガス及びCOガスを含む還元性ガスの接
触でセンサ素子1の抵抗値が変化し、電源10よ
り還元性ガス検出回路11を介してセンサ素子1
に流れる検出電流の変化から水素ガス及びCOガ
スでなる還元性ガスのガス濃度を検出して判断部
12に出力する。
First, if the reducing gas that has come into contact with the sensor element 1 is a reducing gas containing hydrogen gas and CO gas, the light absorption of the chromic material film 3 in the sensor element 1 will change upon contact with the hydrogen gas, and the chromic material film 3 will change. Since WO 3 is used as the material film 3, light absorption increases according to the gas concentration of hydrogen gas, and the transmitted light from the light emitting element 6 is transmitted to the sensor element 1.
The amount of transmitted light incident on the light-receiving hydrogen 8 is attenuated. Therefore, the hydrogen/hydrogen-containing compound detection circuit 9 detects the gas concentration of hydrogen gas from the decrease in the light reception signal by the light receiving element 8 and outputs it to the determination section 12 . On the other hand, the resistance value of the sensor element 1 changes due to contact with reducing gas including hydrogen gas and CO gas, and the sensor element 1 is
The gas concentration of the reducing gas consisting of hydrogen gas and CO gas is detected from the change in the detection current flowing through the sensor and outputted to the determination section 12 .

判断部12においては、還元性ガス検出回路1
1の検出ガス濃度をトータル的なガス濃度とし、
この値から水素・含水素化合物ガス検出回路9で
検出された水素ガスのガス濃度を差し引くことに
よりCOガスのガス濃度を判断する。勿論、水素
ガスのみの場合には、判断部12に対する水素・
含水素化合物ガス検出回路9の検出ガス濃度と還
元性ガス検出回路11のガス濃度とが略一致して
おり、判断部12においては水素ガスであると判
断することができる。また、水素・含水素化合物
ガス以外の還元性ガス、例えばCOガスのみの場
合には、水素・含水素化合物ガス検出回路9の検
出出力が得られないことから、水素・含水素化合
物ガス以外の還元性ガス、例えばCOガスである
ことを容易に判断できる。
In the determination unit 12, the reducing gas detection circuit 1
Let the detected gas concentration in 1 be the total gas concentration,
The gas concentration of CO gas is determined by subtracting the gas concentration of hydrogen gas detected by the hydrogen/hydrogen-containing compound gas detection circuit 9 from this value. Of course, in the case of only hydrogen gas, the hydrogen/
Since the gas concentration detected by the hydrogen-containing compound gas detection circuit 9 and the gas concentration detected by the reducing gas detection circuit 11 substantially match, the determination unit 12 can determine that it is hydrogen gas. In addition, if there is only a reducing gas other than hydrogen/hydrogen-containing compound gas, such as CO gas, the detection output of the hydrogen/hydrogen-containing compound gas detection circuit 9 cannot be obtained. It can be easily determined that the gas is a reducing gas, such as CO gas.

第2図は本発明の他の実施例をガス検出回路部
と共に示した説明図であり、この実施例は水素・
含水素化合物ガスを含む還元性ガスのガス検出に
独立したセンサ素子を使用したことを特徴とす
る。
FIG. 2 is an explanatory diagram showing another embodiment of the present invention together with a gas detection circuit.
The present invention is characterized in that an independent sensor element is used to detect reducing gas containing hydrogen-containing compound gas.

即ち、水素・含水素化合物ガスを検出するため
のセンサ素子1及びその光学系は第1図の実施例
と同じであるが、水素・含水素化合物ガスを含む
トータル的な還元性ガスを検出するため新たにセ
ンサ素子13を別途に設け、電源10によつて還
元性ガス検出回路11を介して電源電圧を印加
し、センサ素子13は水素・含水素化合物ガスを
含む還元性ガスの接触に対し電気的特性、例えば
抵抗値が変化することから、抵抗値の変化に応じ
た検出電流に基づいて還元性ガス検出回路11で
トータル的な還元性ガスのガス濃度を検出し、判
断部12において水素・含水素化合物ガス検出回
路9の検出出力で補償し、水素ガス及びまたは含
水素化合物ガス以外の還元性ガスのガス濃度を判
断するようにしている。
That is, the sensor element 1 and its optical system for detecting hydrogen and hydrogen-containing compound gas are the same as those in the embodiment shown in FIG. 1, but the sensor element 1 detects the total reducing gas including hydrogen and hydrogen-containing compound gas. Therefore, a new sensor element 13 is newly provided, a power supply voltage is applied via the reducing gas detection circuit 11 by the power supply 10, and the sensor element 13 is resistant to contact with reducing gases including hydrogen and hydrogen-containing compound gases. Since electrical characteristics such as resistance value change, the reducing gas detection circuit 11 detects the total reducing gas concentration based on the detected current corresponding to the change in resistance value, and the determination unit 12 detects the hydrogen concentration. - Compensation is made using the detection output of the hydrogen-containing compound gas detection circuit 9, and the gas concentration of a reducing gas other than hydrogen gas and/or hydrogen-containing compound gas is determined.

尚、上記の実施例において、センサ素子の触媒
金属半透明膜2としてはパラジウムPdの他に白
金Ptを使用することができ、またクロミツク材
料膜3を形成する固体化合物としては、3酸化モ
リブデンMoO3の他に2酸化チタンTiO2、水酸化
イリジウムIr(OH)n、5酸化バナジウムV2O5
を用いてもよい。また、第2図のセンサ素子1に
おいて、透明導電膜4は設けなくともよい。
In the above embodiment, platinum Pt can be used in addition to palladium Pd as the catalytic metal semitransparent film 2 of the sensor element, and molybdenum trioxide MoO can be used as the solid compound forming the chromic material film 3. In addition to 3 , titanium dioxide TiO 2 , iridium hydroxide Ir(OH)n, vanadium pentoxide V 2 O 5
may also be used. Further, in the sensor element 1 shown in FIG. 2, the transparent conductive film 4 may not be provided.

(発明の効果) 以上説明してきたように本発明によれば、パラ
ジウムPd等の触媒金属と3酸化タングステン等
の固体化合物との積層構造をもち、水素・含水素
化合物ガスの接触で光吸収特性が変化する水素ガ
ス及び含水素化合物ガスに対し極めて高い選択性
をもつたセンサ素子を補償素子として使用し、選
択性をもたない還元性ガスのセンサ素子の検出出
力から水素・含水素化合物ガスの影響を取り除く
ことで水素・含水素化合物ガス以外の還元性ガ
ス、例えばCOガスの検出に高い選択性をもたせ
るようにしたため、水素ガス及びまたは含水素化
合物ガスを含む還元性ガスであつても水素ガス及
びまたは含水素化合物ガスの影響を取り除いて特
定の還元性ガス、例えばCOガス等に対する高い
選択性をもつたガス検出を行なうことができる。
(Effects of the Invention) As explained above, the present invention has a laminated structure of a catalyst metal such as palladium Pd and a solid compound such as tungsten trioxide, and has light absorption properties due to contact with hydrogen and hydrogen-containing compound gas. A sensor element that has extremely high selectivity for hydrogen gas and hydrogen-containing compound gases that change in hydrogen gas and hydrogen-containing compound gas is used as a compensation element, and hydrogen and hydrogen-containing compound gas By removing the influence of hydrogen, we have achieved high selectivity in detecting reducing gases other than hydrogen and hydrogen-containing compound gases, such as CO gas, so even if reducing gases include hydrogen gas and/or hydrogen-containing compound gas, By removing the influence of hydrogen gas and/or hydrogen-containing compound gas, gas detection can be performed with high selectivity for a specific reducing gas, such as CO gas.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を検出回路部と共に
示した説明図、第2図は本発明の他の実施例を示
した説明図である。 1:センサ素子、2:触媒金属半透明膜、3:
クロミツク材料膜、4:透明導電膜、6:発光素
子、7:発光用電源、8:受光素子、9:水素・
含水素化合物ガス検出回路、10:電源、11:
還元性ガス検出回路、12:判断部、13:セン
サ素子。
FIG. 1 is an explanatory diagram showing one embodiment of the present invention together with a detection circuit section, and FIG. 2 is an explanatory diagram showing another embodiment of the present invention. 1: Sensor element, 2: Catalytic metal semitransparent film, 3:
chromic material film, 4: transparent conductive film, 6: light emitting element, 7: power source for light emission, 8: light receiving element, 9: hydrogen.
Hydrogen-containing compound gas detection circuit, 10: Power supply, 11:
Reducing gas detection circuit, 12: judgment unit, 13: sensor element.

Claims (1)

【特許請求の範囲】 1 水素または含水素化合物ガスのみの濃度に応
じて光吸収特性が変化するセンサ素子と、該セン
サ素子の光吸収特性の変化から水素ガスまたは含
水素化合物ガスのみの濃度を検出する水素・含水
素化合物ガス検出装置と、 水素または含水素化合物ガスを含む還元性ガス
の濃度に応じて電気的特性が変化するセンサ素子
と、該センサ素子の電気的特性の変化から水素ま
たは含水素化合物ガスを含む還元性ガスの濃度を
検出する還元性ガス検出装置と、 該還元性ガス検出装置で検出されたガス濃度か
ら前記水素・含水素化合物ガス検出装置で検出さ
れたガス濃度を差し引くことにより水素または含
水素化合物ガス以外の還元性ガスの濃度を判断す
る判断部とを設けたことを特徴とするガス検出装
置。 2 前記水素または含水素化合物ガスのみの濃度
に応じて光吸収特性が変化するセンサ素子は、水
素または含水素化合物ガスを吸着解離する金属
と、該金属中の水素原子により還元される固体化
合物とからなり、水素・含水素化合物ガス検出装
置は、還元による前記固体化合物の光吸収特性の
変化を検出して電気信号に変換する装置を備えた
ことを特徴とする特許請求の範囲第1項記載のガ
ス検出装置。
[Scope of Claims] 1. A sensor element whose light absorption characteristics change depending on the concentration of only hydrogen or hydrogen-containing compound gas, and a sensor element whose light absorption characteristics change depending on the concentration of only hydrogen gas or hydrogen-containing compound gas, and a sensor element that changes the concentration of only hydrogen gas or hydrogen-containing compound gas from changes in the light absorption characteristics of the sensor element. A hydrogen/hydrogen-containing compound gas detection device, a sensor element whose electrical characteristics change depending on the concentration of a reducing gas containing hydrogen or a hydrogen-containing compound gas, and a sensor element whose electrical characteristics change depending on the concentration of a reducing gas containing hydrogen or a hydrogen-containing compound gas; A reducing gas detection device that detects the concentration of a reducing gas containing a hydrogen-containing compound gas; A gas detection device comprising: a determination unit that determines the concentration of a reducing gas other than hydrogen or hydrogen-containing compound gas by subtraction. 2 The sensor element whose light absorption characteristics change depending on the concentration of only hydrogen or hydrogen-containing compound gas is composed of a metal that adsorbs and dissociates hydrogen or hydrogen-containing compound gas, and a solid compound that is reduced by hydrogen atoms in the metal. Claim 1, wherein the hydrogen/hydrogen-containing compound gas detection device comprises a device that detects a change in the light absorption property of the solid compound due to reduction and converts it into an electrical signal. gas detection device.
JP18750684A 1984-09-07 1984-09-07 Gas detector Granted JPS6166145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18750684A JPS6166145A (en) 1984-09-07 1984-09-07 Gas detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18750684A JPS6166145A (en) 1984-09-07 1984-09-07 Gas detector

Publications (2)

Publication Number Publication Date
JPS6166145A JPS6166145A (en) 1986-04-04
JPH051897B2 true JPH051897B2 (en) 1993-01-11

Family

ID=16207251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18750684A Granted JPS6166145A (en) 1984-09-07 1984-09-07 Gas detector

Country Status (1)

Country Link
JP (1) JPS6166145A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3707053B2 (en) * 2002-05-08 2005-10-19 慎司 岡崎 Method for manufacturing a film for a gas sensor
JP2005331284A (en) * 2004-05-18 2005-12-02 Kobe Steel Ltd Hydrogen gas detecting agent and hydrogen gas detecting device
JP5193733B2 (en) * 2007-09-05 2013-05-08 株式会社アツミテック Ion-conducting electrolyte membrane and method for inspecting joined body of ion-conducting electrolyte membrane and hydrogen electrode

Also Published As

Publication number Publication date
JPS6166145A (en) 1986-04-04

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