JPH0526661B2 - - Google Patents
Info
- Publication number
- JPH0526661B2 JPH0526661B2 JP59049730A JP4973084A JPH0526661B2 JP H0526661 B2 JPH0526661 B2 JP H0526661B2 JP 59049730 A JP59049730 A JP 59049730A JP 4973084 A JP4973084 A JP 4973084A JP H0526661 B2 JPH0526661 B2 JP H0526661B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance value
- heating resistor
- voltage
- thick film
- film heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/345—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads characterised by the arrangement of resistors or conductors
Landscapes
- Electronic Switches (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、フアクシミリ等で使用されるサー
マルヘツドの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a thermal head used in facsimile machines and the like.
一般にサーマルヘツドは、感熱記録紙上に数
字、文字、記号等を記録するために用いられるも
ので、通常は、絶縁性基板上に一対の電極を形成
するとともに、該両電極間に発熱抵抗体を接続し
て構成されている。そしてこのサーマルヘツドを
用いて記録を行なう場合は、両電極間の発熱抵抗
体に電圧を印加して該抵抗体を発熱させ、その熱
を感熱記録紙に与えればよく、これにより感熱記
録紙には抵抗体の発熱に応じて感熱記録が行なわ
れることとなる。
A thermal head is generally used to record numbers, characters, symbols, etc. on thermal recording paper, and usually has a pair of electrodes formed on an insulating substrate and a heating resistor between the two electrodes. connected and configured. When recording using this thermal head, a voltage is applied to the heating resistor between both electrodes to cause the resistor to generate heat, and the heat is applied to the thermal recording paper. In this case, thermal recording is performed in accordance with the heat generated by the resistor.
そして従来この種のサーマルヘツドはその製造
プロセスの相違に基づいて厚膜型と薄膜型とに分
類されており、上記厚膜型サーマルヘツドは薄膜
型サーマルヘツドに比し、製造プロセスが極めて
容易で量産性に富み、しかも廉価かつ強靭である
等の特性を有している。 Conventionally, this type of thermal head has been classified into thick-film type and thin-film type based on the difference in the manufacturing process, and the manufacturing process of the thick-film type thermal head is much easier than that of the thin-film type thermal head. It has the characteristics of being mass-producible, inexpensive, and strong.
しかしながら、従来の厚膜型サーマルヘツドで
は、厚膜発熱抵抗体の抵抗値のばらつきが、薄膜
型のそれが±7%以下と小さいのに対し、±25%
と極めて大きく、作画した場合に画質が見劣り
し、この抵抗値のばらつきに起因する画質の見劣
りを生ずる。厚膜型サーマルヘツドにおける抵抗
値のばらつきによる画質の見劣りを解消するため
の1つの方法として、電源容量を大きくする方法
が考えられる。 However, in conventional thick-film thermal heads, the variation in the resistance value of the thick-film heating resistor is ±25%, whereas that of the thin-film type is as small as ±7% or less.
This is extremely large, and when an image is drawn, the image quality is poor, resulting in poor image quality due to this variation in resistance value. One possible method for resolving the poor image quality caused by variations in resistance in thick-film thermal heads is to increase the power supply capacity.
即ち、発熱抵抗体の抵抗値をR、印加電圧をV
とすると、発熱抵抗体に印加される電力P0は
V2/Rで表される。ここで印加電圧Vは一定と
する。しかるに抵抗値Rに偏差±ΔRがあつた場
合には、印加電力は変動し、最小印加電力
PMIN、最高印加電力PMAXはそれぞれ次の式
で表される。 That is, the resistance value of the heating resistor is R, and the applied voltage is V.
Then, the power P 0 applied to the heating resistor is
It is expressed as V 2 /R. Here, the applied voltage V is assumed to be constant. However, if there is a deviation ±ΔR in the resistance value R, the applied power will fluctuate, and the minimum applied power will
PMIN and maximum applied power PMAX are each expressed by the following formulas.
PMIN=V2/R(1+ΔR)
=P0/(1+ΔR) …(1)
PMAX=V2/R(1−ΔR)
=P0/(1−ΔR) …(2)
そして上記式(1)(2)に、厚膜抵抗体の特性である
ΔR=±25%を代入すると、そのエネルギー差は
−20%〜+30%となる。一方、感熱記録紙の印字
濃度Dは印加電力の増加に伴つてほぼそれに比例
して増加していくが、その増加係数をk(通常の
感熱記録紙ではk=4D/W)とすると、上記印
加電力の差によつて生じる濃度差ΔDは次式で表
される。 PMIN=V 2 /R(1+ΔR) =P 0 /(1+ΔR) …(1) PMAX=V 2 /R(1−ΔR) =P 0 /(1−ΔR)…(2) And the above formula (1) If ΔR=±25%, which is a characteristic of a thick film resistor, is substituted into (2), the energy difference will be -20% to +30%. On the other hand, the print density D of thermal recording paper increases almost in proportion to the increase in applied power, but if the increase coefficient is k (k = 4D/W for ordinary thermal recording paper), then The concentration difference ΔD caused by the difference in applied power is expressed by the following equation.
ΔD=kP0(1/1−ΔR−1/1+ΔR)
=kP02ΔR/1−ΔR2 …(3)
ここでk=4,P0=0.5Wと仮定し、式(3)を用
いて濃度差ΔDを求めると、ΔR=±7%の薄膜
型サーマルヘツドでは生じる濃度差がΔD=0.28
と小さいのに対し、ΔR=±25%の厚膜型サーマ
ルヘツドでは濃度差はΔD=1.07と、薄膜型のそ
れに比して3.8倍も大きくなる。この状態で感熱
記録紙上に印字を行なつた場合には、発熱抵抗体
に対応する縦すじが現われ、画質が著しく損なわ
れることとなる。 ΔD=kP 0 (1/1−ΔR−1/1+ΔR) =kP 0 2ΔR/1−ΔR 2 …(3) Here, assuming k=4 and P 0 =0.5W, using equation (3), When calculating the concentration difference ΔD, the concentration difference produced by a thin film thermal head with ΔR = ±7% is ΔD = 0.28.
On the other hand, in a thick film type thermal head with ΔR = ±25%, the concentration difference is ΔD = 1.07, which is 3.8 times larger than that of a thin film type. If printing is performed on thermal recording paper in this state, vertical streaks corresponding to the heating resistors will appear, and the image quality will be significantly impaired.
また感熱記録紙は濃度が約1.3で飽和するとい
う特性を持つが、全ドツトの発熱低抗体を視覚上
黒と感ずる濃度最低値1.0に対応する温度以上に
発熱させようとした場合には、発熱抵抗体への印
加電力は平均濃度がD=(1.0+ΔD/2)となる
ような電力に設定する必要がある。この場合、上
述のように濃度差ΔDが大きいと、当然平均濃度
を高く設定することとなつて薄膜型に比べて極め
て大きな余分のエネルギーが必要となる。 In addition, thermosensitive recording paper has the characteristic that it saturates at a density of about 1.3, but if you try to make all the dots' heat-generating low antibodies above the temperature corresponding to the minimum density value of 1.0, which is visually perceived as black, the heat-generating It is necessary to set the power applied to the resistor so that the average concentration becomes D=(1.0+ΔD/2). In this case, if the concentration difference ΔD is large as described above, the average concentration will naturally be set high, which will require an extremely large amount of extra energy compared to the thin film type.
そこで、この発明は以上のような従来のものの
欠点を除去するためになされたもので、サーマル
ヘツドの多数の厚膜発熱抵抗体の抵抗値のばらつ
きを均一化することによつて、電源容量を増大さ
せることなく、画質を大幅に向上しうる新規なサ
ーマルヘツドの製造方法を提供することを目的と
する。
Therefore, this invention was made to eliminate the above-mentioned drawbacks of the conventional devices, and by equalizing the variation in resistance values of the large number of thick-film heating resistors in a thermal head, the power supply capacity can be increased. It is an object of the present invention to provide a new method for manufacturing a thermal head that can significantly improve image quality without increasing the image quality.
即ち、この発明に係るサーマルヘツドの製造方
法は、多数の厚膜発熱抵抗体からなるサーマルヘ
ツドにおいて、薄膜型に比べ抵抗値のばらつきが
非常に大きいことに鑑み、多数の厚膜発熱抵抗体
からなる発熱抵抗体群を共通電極と複数の個別電
極に電気的に接続し、上記共通電極に一方のプロ
ーブを接触させ、他方のプローブを個別電極に接
触させて抵抗検出器により各厚膜発熱抵抗体の抵
抗値を検出し、その抵抗値が設定値よりも高い所
定の厚膜発熱抵抗体に対し、上記一方のプローブ
を上記共通電極に接触させたままで、上記他方の
プローブを上記所定の厚膜発熱抵抗体につながる
個別電極に接触させ、電圧の印加により厚膜発熱
抵抗体の抵抗値が低下する範囲内における電圧の
大きさで上記一方および他方のプローブを介して
上記所定の厚膜発熱抵抗体に印加して上記所定の
厚膜発熱抵抗体の抵抗値を低下させることによ
り、上記発熱抵抗体群の抵抗値のばらつきを均一
化するものである。 That is, the method for manufacturing a thermal head according to the present invention is based on the fact that in a thermal head consisting of a large number of thick film heating resistors, the variation in resistance value is much larger than that of a thin film type. A group of heating resistors is electrically connected to a common electrode and a plurality of individual electrodes, one probe is brought into contact with the common electrode, the other probe is brought into contact with the individual electrodes, and each thick film heating resistor is detected by a resistance detector. The resistance value of the body is detected, and while the one probe is kept in contact with the common electrode, the other probe is moved to the predetermined thickness with respect to a predetermined thick film heating resistor whose resistance value is higher than the set value. The predetermined thick film heating is performed through the one and the other probes by applying a voltage within the range where the resistance value of the thick film heating resistor decreases by applying a voltage by contacting the individual electrodes connected to the film heating resistor. By lowering the resistance value of the predetermined thick-film heat generating resistor by applying it to the resistor, variations in the resistance values of the heat generating resistor group are made uniform.
本発明の一実施例の説明に先立ち、まず本発明
の原理的な事項について説明する。
Before explaining one embodiment of the present invention, the fundamental matters of the present invention will be explained first.
厚膜発熱抵抗体では、厚膜発熱抵抗体につなが
る共通電極および個別電極にそれぞれ一方および
他方のプローブを接触させ、これら一方および他
方のプローブを介してて定格よりも高い電圧を印
加した場合にその抵抗値が低下していくという現
象を利用する。これは、電圧の印加によつて厚膜
発熱抵抗体内で局所的に絶縁破壊が生じているこ
とが原因であると考えられる。 For thick film heating resistors, when one and the other probes are brought into contact with the common electrode and individual electrodes connected to the thick film heating resistor, respectively, and a voltage higher than the rated voltage is applied through these one and the other probes. The phenomenon in which the resistance value decreases is utilized. This is thought to be due to local dielectric breakdown occurring within the thick film heating resistor due to the application of voltage.
第1図は縦軸に抵抗値の変化率ΔR/R、横軸
に印加電力をとつたときの両者の関係を示す。第
1図において、印加電力P0は実動作条件として
設定されるポイントで、これを越えて印加電力
PBに至るまでの範囲は長時間の電力印加の下で
劣化が進んでいく範囲であり、さらに印加電力
PBを越えた範囲は極く短時間の電力印加で劣化
破損に至る範囲である。この特性曲線の中で特に
注目に値するのは、印加電力P0からPBに至る範
囲であり、この範囲では極く短時間の電力印加で
あれば、抵抗値が低下するだけで劣化は生じな
い。従つてこの範囲の電力を印加するようにすれ
ば、発熱抵抗体の抵抗値をトリミングすることが
可能である。この場合、印加電圧は直流電圧、パ
ルス電圧のいずれの電圧であつてもよい。 FIG. 1 shows the relationship between the resistance change rate ΔR/R on the vertical axis and the applied power on the horizontal axis. In Figure 1, the applied power P 0 is the point set as the actual operating condition;
The range up to PB is the range in which deterioration progresses under long-term power application, and even further as the applied power
The range exceeding PB is the range in which deterioration and damage can occur with the application of power for an extremely short period of time. Of particular note in this characteristic curve is the range from applied power P 0 to PB; in this range, if power is applied for an extremely short period of time, the resistance value will only decrease and no deterioration will occur. . Therefore, by applying power within this range, it is possible to trim the resistance value of the heating resistor. In this case, the applied voltage may be either a DC voltage or a pulse voltage.
第2図は本発明の基礎となる本件発明者の実験
結果を示すものであり、縦軸に抵抗値変化率
ΔR/R、横軸にパルス電圧をとり、例えばデユ
ーテイ比1/50、パルス幅1μsecのパルス電圧を、
その電圧を段階的に上げていつて印加した場合の
抵抗値の変化率を示したものである。第2図によ
れば、例えば−30%の抵抗値トリミングを行なう
場合には80Vのパルス電圧を印加すればよいこと
が分かる。なお印加方法は20V,40V,60Vと段
階的にパルス電圧を増加させていつてもよく、こ
の方法であれば、厚膜発熱抵抗体の抵抗値を限り
なく希望する値に近づけることができる。 Figure 2 shows the experimental results of the present inventor, which are the basis of the present invention.The vertical axis shows the resistance change rate ΔR/R, and the horizontal axis shows the pulse voltage.For example, the duty ratio is 1/50, the pulse width is 1μsec pulse voltage,
The figure shows the rate of change in resistance value when the voltage is applied while increasing it stepwise. According to FIG. 2, it can be seen that, for example, when trimming the resistance value by -30%, it is sufficient to apply a pulse voltage of 80V. Note that the application method may be such that the pulse voltage is increased in steps of 20 V, 40 V, and 60 V. If this method is used, the resistance value of the thick film heating resistor can be brought as close as possible to the desired value.
また印加電圧として直流電圧を用いる場合に
は、この場合も抵抗値だけがドリフトし、劣化破
損に至らないような低い電圧、例えば5V程度の
電圧を印加するようにすればよい。 Further, when a DC voltage is used as the applied voltage, it is sufficient to apply a low voltage, for example, about 5 V, so that only the resistance value drifts and does not cause deterioration or damage.
次に本発明の一実施例を図について説明する。 Next, one embodiment of the present invention will be described with reference to the drawings.
第3図及び第4図は本発明の一実施例によるサ
ーマルヘツドを示す。図において、1は例えばア
ルミナ等からなる絶縁性基板、2は絶縁性基板1
上に形成され、複数のの突条電極部2aを有する
共通電極、31〜3nは絶縁性基板1上にそれぞ
れが上記共通電極2の電極部2a間に入り込むよ
うにして、即ちインターデイジツト型に形成され
た複数の個別電極、4は絶縁性基板1上に共通電
極2の突条電極部2a及び個別電極31〜3nと
電気的に接続して形成され、隣接する突条電極部
2a間の部分がそれぞれ1ビツトの発熱抵抗体4
aとなつた発熱抵抗体群であり、上記発熱抵抗体
4aの抵抗値はそれが所要の抵抗値より高いとき
にはパルス電圧印加によつて低下させられてい
る。5は発熱抵抗体4aへの通電を制御するため
の32ビツトのドライバ、61〜632は32個のド
ライバ5のパツドで、個別電極61〜632の他
端に設けられ、個別電極に含めて考えるものとす
る。 3 and 4 illustrate a thermal head according to one embodiment of the invention. In the figure, 1 is an insulating substrate made of, for example, alumina, and 2 is an insulating substrate 1.
The common electrodes 31 to 3n formed on the insulating substrate 1 and having a plurality of protruding electrode portions 2a are arranged so as to fit between the electrode portions 2a of the common electrode 2, that is, an interdigitated type. A plurality of individual electrodes 4 are formed on the insulating substrate 1 and are electrically connected to the protrusion electrode portion 2a and the individual electrodes 31 to 3n of the common electrode 2, and between adjacent protrusion electrode portions 2a. Each part is a heating resistor 4 of 1 bit.
The resistance value of the heating resistor 4a is lowered by applying a pulse voltage when the resistance value of the heating resistor 4a is higher than the required resistance value. Reference numeral 5 indicates a 32-bit driver for controlling energization to the heating resistor 4a, and 61 to 632 indicate pads of the 32 drivers 5, which are provided at the other ends of the individual electrodes 61 to 632 and are considered to be included in the individual electrodes. shall be taken as a thing.
次に製造方法について説明する。 Next, the manufacturing method will be explained.
サーマルヘツドを製造する場合、まず絶縁性基
板1上に従来公知の厚膜技術を用いて共通電極
2、個別電極31〜3n及びパツド61〜632
を形成するとともに、該絶縁性基板1上にこれも
従来公知の厚膜技術を用いて発熱抵抗体群4を共
通電極2及び個別電極31〜3nと電気的に接続
して形成する。次に共通電極2に抵抗検出器の一
方のプローブを接触させ、他方のプローブを個別
電極に含まれるパツド61〜632に順次接触さ
せて、各厚膜発熱抵抗体4aの抵抗値を検出し、
その際、抵抗値が設定値R0より高い厚膜発熱抵
抗体4a(第5のA部、B部参照)については、
プローブを共通電極2と個別電極(パツド)61
〜632に当てた状態のままで、検出器から該プ
ローブを取り外し、該両プローブ間に、デユーテ
イ比1/50、パルス幅1μsec、及び抵抗値の偏差
に応じた大きさ(第2図参照)のパルス電圧を印
加し、その抵抗値を設定値R0近くまで低下させ
る(第5図のC部、D部参照)。このようなサー
マルヘツドでは、多数の厚膜発熱抵抗体を有する
ので、各厚膜発熱抵抗体の抵抗値を測定するた
め、共通電極および個別電極を設け、これらに両
プローブを接触させて抵抗値測定を迅速かつ容易
にするとともに、共通電極に一方のプローブを接
触させたままで、他方のプローブを抵抗値の高い
所定の厚膜発熱抵抗体の個別電極に接触させて電
圧を印加するので、抵抗値のばらつき調整も容易
に行なえる。最後に絶縁性基板2上にドライバ5
を搭載する。 When manufacturing a thermal head, first, a common electrode 2, individual electrodes 31 to 3n, and pads 61 to 632 are formed on an insulating substrate 1 using a conventionally known thick film technique.
At the same time, a heating resistor group 4 is formed on the insulating substrate 1 by electrically connecting it to the common electrode 2 and the individual electrodes 31 to 3n using a conventionally known thick film technique. Next, one probe of the resistance detector is brought into contact with the common electrode 2, and the other probe is brought into contact with the pads 61 to 632 included in the individual electrodes in order to detect the resistance value of each thick film heating resistor 4a,
At that time, regarding the thick film heating resistor 4a (see the fifth part A and B) whose resistance value is higher than the set value R0 ,
Connect the probe to common electrode 2 and individual electrode (pad) 61
632, remove the probe from the detector, and connect the two probes with a duty ratio of 1/50, a pulse width of 1 μsec, and a size according to the deviation of the resistance value (see Figure 2). A pulse voltage of is applied to lower the resistance value to near the set value R 0 (see parts C and D in FIG. 5). Since such a thermal head has a large number of thick film heating resistors, in order to measure the resistance value of each thick film heating resistor, a common electrode and individual electrodes are provided, and both probes are brought into contact with these to measure the resistance value. In addition to making measurements quick and easy, the voltage is applied by keeping one probe in contact with the common electrode and the other probe in contact with the individual electrodes of a predetermined high-resistance thick-film heating resistor. Variation in values can also be easily adjusted. Finally, place the driver 5 on the insulating board 2.
Equipped with.
以上のような実施例のサーマルヘツドでは、厚
膜発熱抵抗体の抵抗値のばらつきを薄膜型サーマ
ルヘツドのそれと同程度、あるいはそれ以下に抑
えることができ、その結果電源容量を大きくする
ことなく、画質を大幅に向上できる。特に厚膜型
サーマルヘツドでは、所定値より高い抵抗値を有
する厚膜発熱抵抗体に対し、両プローブを共通電
極および個別電極に接触させ、電圧印加により抵
抗値が低下する範囲内における電圧を印加して抵
抗値のばらつきを調整するので、比較的小さな電
圧、例えば80Vで−30%の抵抗値トリミングが可
能となり、薄膜型に近いばらつきまで改善でき
る。 In the thermal head of the above embodiment, the variation in the resistance value of the thick film heating resistor can be suppressed to the same level as that of the thin film type thermal head, or less than that, and as a result, the power supply capacity can be reduced without increasing the power supply capacity. Image quality can be significantly improved. Particularly in thick film thermal heads, both probes are brought into contact with the common electrode and the individual electrodes, and a voltage is applied to the thick film heating resistor that has a resistance value higher than a predetermined value within a range in which the resistance value decreases. Since the variation in resistance value is adjusted by adjusting the variation in resistance value, it is possible to trim the resistance value by -30% at a relatively small voltage, for example 80V, and the variation can be improved to a level close to that of the thin film type.
もつとも、電圧を増加していくと抵抗値は急激
に増加するが、これは一般に破壊モードと称さ
れ、発熱抵抗体の形状変化を伴うおそれがある
が、比較的小さい電圧範囲ではこのようなおそれ
はない。 However, as the voltage increases, the resistance value increases rapidly, which is generally referred to as a breakdown mode, and may involve a change in the shape of the heating resistor, but in a relatively small voltage range, this risk does not occur. do not have.
こうして、多数の厚膜発熱抵抗体の抵抗値のば
らつきを均一化することにより、画質劣化を大幅
に改善でき、濃度不足の問題をも解消できるもの
である。 In this way, by equalizing the variations in the resistance values of a large number of thick film heating resistors, image quality deterioration can be significantly improved and the problem of insufficient density can also be solved.
また、抵抗値のばらつきを抑える方法としては
発熱抵抗体の印刷条件、例えば幅を変えることが
考えられるが、この方法では印字ドツトの大きさ
にばらつきが生じるという問題がある。これに対
して本発明ではパルス電圧の印加によつて抵抗値
のばらつきを抑制するようにしているので、印字
ドツトの大きさにばらつきが生じるということは
ない。 Further, as a method of suppressing variations in resistance value, it may be possible to change the printing conditions of the heating resistor, for example, the width, but this method has the problem of causing variations in the size of printed dots. On the other hand, in the present invention, variations in resistance value are suppressed by applying a pulse voltage, so variations in the size of printed dots do not occur.
以上のように、この発明に係るサーマルヘツド
の製造方法によれば、多数の厚膜発熱抵抗体の抵
抗値を測定するために、共通電極および複数の個
別電極を設け、これらの電極にプローブを接触さ
せて抵抗値測定を行い、一方のプローブを共通電
極に接触させたままで、他方のプローブを設定値
より抵抗値の高い厚膜発熱抵抗体につながる個別
電極に接触させて所望の電圧を印加するようにし
たので、抵抗値の測定のみならず、電圧印加もサ
ーマルヘツドの多数の厚膜発熱抵抗体に対して容
易かつ迅速に行ないうるとともに、電圧印加によ
り抵抗値が低下する範囲内における比較的小さな
電圧の印加によつて抵抗値を低下させ、薄膜型と
同程度まで抵抗値のばらつきを均一化することに
より、厚膜抵抗体の形状変化を伴うことなく、画
質劣化を大幅に改善することができる。
As described above, according to the method for manufacturing a thermal head according to the present invention, in order to measure the resistance values of a large number of thick film heating resistors, a common electrode and a plurality of individual electrodes are provided, and probes are attached to these electrodes. Measure the resistance value by contacting the electrode, and apply the desired voltage by keeping one probe in contact with the common electrode and touching the other probe with the individual electrode connected to the thick-film heating resistor whose resistance value is higher than the set value. This makes it possible not only to measure the resistance value but also to apply voltage to the large number of thick-film heating resistors in the thermal head easily and quickly. By lowering the resistance value by applying a relatively small voltage and making the variation in resistance uniform to the same level as the thin-film type, image quality deterioration is significantly improved without changing the shape of the thick-film resistor. be able to.
第1図および第2図はともに本発明の理解に必
要な事項を説明するための印加電力と抵抗値変化
率との関係を示す図、第3図は本発明の一実施例
によるサーマルヘツドの平面図、第4図は第3図
の一部拡大図、第5図は上記サーマルヘツドの製
造方法を説明するための図である。
1…絶縁性基板、2…共通電極、31〜3n…
個別電極、4…発熱抵抗体群、4a…厚膜発熱抵
抗体。なお図中同一符号は同一又は相当部分を示
す。
1 and 2 are both diagrams showing the relationship between applied power and resistance change rate for explaining matters necessary for understanding the present invention, and FIG. 4 is a partially enlarged view of FIG. 3, and FIG. 5 is a diagram for explaining the method of manufacturing the thermal head. 1... Insulating substrate, 2... Common electrode, 31-3n...
Individual electrode, 4... Heat generating resistor group, 4a... Thick film heat generating resistor. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (1)
を共通電極と複数の個別電極に電気的に接続し、 上記共通電極に一方のプローブを接触させ、 他方のプローブを個別電極に接触させて抵抗検
出器により各厚膜発熱抵抗体の抵抗値を検出し、 その抵抗値が設定値よりも高い所定の厚膜発熱
抵抗体に対し、上記一方のプローブを上記共通電
極に接触させたままで、上記他方のプローブを上
記所定の厚膜発熱抵抗体につながる個別電極に接
触させ、 電圧の印加により厚膜発熱抵抗体の抵抗値が低
下する範囲内における電圧の大きさで上記一方お
よび他方のプローブを介して上記所定の厚膜発熱
抵抗体に印加して上記所定の厚膜発熱抵抗体の抵
抗値を低下させることにより、 上記発熱抵抗体群の抵抗値のばらつきを均一化
することを特徴とするサーマルヘツドの製造方
法。 2 印加電圧がパルス電圧であるとき、該パルス
電圧は厚膜発熱抵抗体の抵抗値が低下する範囲内
において数十Vの大きさであることを特徴とする
特許請求の範囲第1項記載のサーマルヘツドの製
造方法。 3 印加電圧が直流電圧であるとき、該直流電圧
は5V程度の大きさであることを特徴とする特許
請求の範囲第1項記載のサーマルヘツドの製造方
法。[Claims] 1. A heating resistor group consisting of a large number of thick film heating resistors is electrically connected to a common electrode and a plurality of individual electrodes, one probe is brought into contact with the common electrode, and the other probe is brought into contact with the common electrode. The resistance value of each thick film heating resistor is detected by a resistance detector by contacting the individual electrodes, and one of the probes is connected to the common electrode for a predetermined thick film heating resistor whose resistance value is higher than the set value. While keeping the other probe in contact with the individual electrode connected to the predetermined thick film heating resistor, apply a voltage of a magnitude within the range where the resistance value of the thick film heating resistor decreases by applying the voltage. By lowering the resistance value of the predetermined thick film heating resistor by applying voltage to the predetermined thick film heating resistor through the one and the other probes, the variation in the resistance value of the heating resistor group is made uniform. 1. A method for manufacturing a thermal head, characterized in that: 2. When the applied voltage is a pulse voltage, the pulse voltage has a magnitude of several tens of V within a range where the resistance value of the thick film heating resistor decreases. A method of manufacturing a thermal head. 3. The method of manufacturing a thermal head according to claim 1, wherein when the applied voltage is a DC voltage, the DC voltage is approximately 5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59049730A JPS60192666A (en) | 1984-03-13 | 1984-03-13 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59049730A JPS60192666A (en) | 1984-03-13 | 1984-03-13 | Thermal head |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3156376A Division JP2718289B2 (en) | 1991-06-27 | 1991-06-27 | Manufacturing method of thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60192666A JPS60192666A (en) | 1985-10-01 |
| JPH0526661B2 true JPH0526661B2 (en) | 1993-04-16 |
Family
ID=12839299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59049730A Granted JPS60192666A (en) | 1984-03-13 | 1984-03-13 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60192666A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4782202A (en) * | 1986-12-29 | 1988-11-01 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for resistance adjustment of thick film thermal print heads |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49121955A (en) * | 1973-03-30 | 1974-11-21 | ||
| JPS5419179B2 (en) * | 1973-06-25 | 1979-07-13 | ||
| JPS5032951A (en) * | 1973-07-20 | 1975-03-29 | ||
| GB1473868A (en) * | 1973-10-23 | 1977-05-18 | Olivetti & Co Spa | Electrothermal printers |
| JPS514253A (en) * | 1974-06-29 | 1976-01-14 | Toyo Kogyo Co | Netsukasoseijushino kongokyokyusochi |
| JPS598232B2 (en) * | 1976-07-15 | 1984-02-23 | 株式会社東芝 | Thick film materials for thermal heads and thermal heads |
| JPS549944A (en) * | 1977-06-24 | 1979-01-25 | Hitachi Ltd | Heating resistor formation method for thermal printer |
| JPS54123039A (en) * | 1978-03-17 | 1979-09-25 | Nippon Toki Kk | Thermosensitive recording head |
| JPS5893365A (en) * | 1981-11-30 | 1983-06-03 | Nec Corp | Function trimming method |
| JPS5938075A (en) * | 1982-08-25 | 1984-03-01 | Tokyo Electric Co Ltd | Thermal head |
-
1984
- 1984-03-13 JP JP59049730A patent/JPS60192666A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60192666A (en) | 1985-10-01 |
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