JPH0529637B2 - - Google Patents
Info
- Publication number
- JPH0529637B2 JPH0529637B2 JP27732784A JP27732784A JPH0529637B2 JP H0529637 B2 JPH0529637 B2 JP H0529637B2 JP 27732784 A JP27732784 A JP 27732784A JP 27732784 A JP27732784 A JP 27732784A JP H0529637 B2 JPH0529637 B2 JP H0529637B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction tube
- inlet
- vapor phase
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 claims description 50
- 239000007789 gas Substances 0.000 claims description 50
- 239000013078 crystal Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 34
- 239000002994 raw material Substances 0.000 claims description 19
- 238000001947 vapour-phase growth Methods 0.000 claims description 19
- 239000011261 inert gas Substances 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 229910002804 graphite Inorganic materials 0.000 description 13
- 239000010439 graphite Substances 0.000 description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
本発明は気相成長装置に関し、特に半導体素子
の製造等において用いられる気相成長装置に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field to which the Invention Pertains] The present invention relates to a vapor phase growth apparatus, and more particularly to a vapor phase growth apparatus used in the manufacture of semiconductor elements.
高集積回路、半導体レーザ及び光検出等の微細
構造を有する半導体装置を作成するにあたり、薄
膜成長はきわめて重要な工程の一つである。薄膜
成長方法としては気相成長法、液相成長法及び分
子線エピタクシー法が用いられているが、気相成
長法は原料ガスから結晶基板への直接成長という
有利さから量産性の点で最も優れている。
Thin film growth is one of the extremely important steps in producing semiconductor devices with fine structures such as highly integrated circuits, semiconductor lasers, and photodetectors. Vapor phase epitaxy, liquid phase epitaxy, and molecular beam epitaxy are used as thin film growth methods, but vapor phase epitaxy has the advantage of direct growth from source gas to crystal substrates, making it easier to mass-produce. The best.
気相成長法による従来の気相成長装置におい
て、原料ガスはガスボンベより又液体原料の場合
はバブラー（Babbler）より輸送ガスとともに反
応管に供給される。結晶基板は反応管内において
抵抗加熱、高周波加熱等により加熱され、送られ
てきた原料ガスは結晶基板上又はその近傍におい
て化学反応を起こし結晶基板上にエピタキシヤル
成長する。 In a conventional vapor phase growth apparatus using a vapor phase growth method, a raw material gas is supplied to a reaction tube together with a transport gas from a gas cylinder or from a bubbler in the case of a liquid raw material. The crystal substrate is heated in the reaction tube by resistance heating, high-frequency heating, etc., and the supplied raw material gas causes a chemical reaction on or near the crystal substrate, resulting in epitaxial growth on the crystal substrate.
結晶基板は室温にて反応管内に導入され、反応
管内のガス交換及び反応管の昇温を終え、成長条
件が整つてはじめて成長が開始される。このよう
な状態において従来の気相成長装置ではたとえば
トリメチルガリウム（trimethyle gallium）及び
アルシン（Arsine）を用いる−族の結晶成
長の場合、前回の成長時に反応管壁に生じた砒素
及びガリウム砒素が基板の装着及び取出しの際、
基板表面に落下して表面に付着し、薄膜結晶の表
面の状態を悪くするという欠点がある。そこで結
晶成長ごとに反応管を洗うという対策が施されて
いるが、このときに水分及び大気が反応管内に導
入するため、成長した結晶の電気的特性が不安定
になるという新たな問題が生じていた。 The crystal substrate is introduced into the reaction tube at room temperature, and growth is started only after gas exchange within the reaction tube and temperature rise of the reaction tube are completed and growth conditions are established. Under such conditions, in the case of - group crystal growth using, for example, trimethyle gallium and arsine in a conventional vapor phase growth apparatus, the arsenic and gallium arsenide generated on the reaction tube wall during the previous growth are transferred to the substrate. When installing and removing the
It has the disadvantage that it falls onto the substrate surface and adheres to the surface, worsening the surface condition of the thin film crystal. Therefore, a countermeasure has been taken to wash the reaction tube after each crystal growth, but at this time, moisture and air are introduced into the reaction tube, which causes a new problem in that the electrical characteristics of the grown crystal become unstable. was.
本発明の目的は反応管の構造に工夫を施すこと
により上記欠点及び問題点を解決し、結晶表面の
状態を向上し得る気相成長装置を提供することに
ある。
An object of the present invention is to solve the above-mentioned drawbacks and problems by devising the structure of the reaction tube, and to provide a vapor phase growth apparatus that can improve the condition of the crystal surface.
本発明は、原料ガスを供給する入口と、基板を
装着し及び取出すサンプル導入口と、基板を配置
する支持台とを有する反応管を備える気相成長装
置において、前記反応管が、前記原料ガスのガス
流に関して前記支持台から前記サンプル導入口に
至る下流部に、反応に不活性なガスを送り込むガ
ス導入口と、前記原料ガスと前記不活性なガスと
を排出するガス排出口とを備え、前記ガス排出口
と前記サンプル導入口との間の反応管の管壁に結
晶が生成しないようにしたことを特徴としてい
る。
The present invention provides a vapor phase growth apparatus equipped with a reaction tube having an inlet for supplying a raw material gas, a sample introduction port for mounting and taking out a substrate, and a support stand for arranging a substrate, in which the reaction tube is connected to the raw material gas. A gas inlet for feeding an inert gas into the reaction and a gas outlet for discharging the raw material gas and the inert gas are provided downstream from the support stand to the sample inlet with respect to the gas flow. The present invention is characterized in that crystals are not generated on the wall of the reaction tube between the gas outlet and the sample inlet.
次に図面を参照して本発明の実施例を説明す
る。第１図は本発明の気相成長装置の一実施例で
あるたとえばガリウム砒素気相成長装置の断面図
である。
Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view of, for example, a gallium arsenide vapor phase growth apparatus which is an embodiment of the vapor phase growth apparatus of the present invention.
この気相成長装置は石英反応管１を備えてお
り、この石英反応管１は原料ガスを送り込むため
の反応管入口２と、ガス流の下流部に位置し結晶
基板を装着及び取出すためのサンプル導入口３と
を有しており、反応管１内には結晶基板を配置す
るためのグラフアイト支持台４が設けられてい
る。さらに石英反応管１はグラフアイト支持台４
の下流側に、反応に不活性なガスを反応管内に送
り込むためのガス導入口５と、グラフアイト支持
台４に隣接し原料ガス、輸送ガス及び不活性ガス
を排出するためのガス排出口６とを備えている。
この石英反応管１の外部であつてグラフアイト支
持台４の位置する箇所には高周波加熱用の高周波
コイル７が設けられている。 This vapor phase growth apparatus is equipped with a quartz reaction tube 1, and this quartz reaction tube 1 has a reaction tube inlet 2 for feeding raw material gas, and a sample inlet located downstream of the gas flow for mounting and taking out a crystal substrate. The reaction tube 1 has an inlet 3, and a graphite support 4 for placing a crystal substrate is provided inside the reaction tube 1. Furthermore, the quartz reaction tube 1 is attached to a graphite support base 4.
On the downstream side, there is a gas inlet 5 for feeding a gas inert to the reaction into the reaction tube, and a gas outlet 6 adjacent to the graphite support 4 for discharging raw material gas, transport gas, and inert gas. It is equipped with
A high frequency coil 7 for high frequency heating is provided outside the quartz reaction tube 1 at a location where the graphite support 4 is located.
このような構成のガリウム砒素気相成長装置に
おいて、石英反応管１内に設置したグラフアイト
支持台４にガリウム砒素結晶基板（以下単に結晶
基板という）８をサンプル導入口３より配置し、
高周波コイル７により結晶基板８の近傍を加熱す
る。一方、有機金属原料であるトリメチルガリウ
ム及び砒素の原料であるアルシンは反応管入口２
より反応管１に送りこまれ、加熱された結晶基板
近傍で熱分解し結晶基板８の表面でエピタキシヤ
ル成長する。これと同時にガス導入口５より反応
に不活性なガスを反応管１に送りこむ。したがつ
て結晶基板近傍の反応部を通過した原料ガスはサ
ンプル導入口３の方向に向つて流れることなく速
やかにガス排出口６より排出される。このとき結
晶基板８の結晶表面ばかりでなく加熱されたグラ
フアイト支持台４およびグラフアイト支持台４の
近傍の反応管壁にガリウム砒素がわずかに析出す
るが従来の気相成長装置にみられるように反応管
壁の下流部全面に析出し付着するということがな
くなる。したがつて薄膜成長を終えた結晶基板８
を、サンプル導入口３より取出す際に基板表面に
ガリウム砒素が落下することがない。さらに反応
管壁に析出した付着物は塩化水素ガスにより結晶
基板を配置していない状態で取り除くことができ
るので、次にサンプル導入口３より結晶基板８を
装着する際にガリウム砒素が基板表面に落下して
くるおそれは全くなくなる。このように本実施例
によれば結晶基板の表面の状態を良好に保持する
ことが可能となる。 In a gallium arsenide vapor phase growth apparatus having such a configuration, a gallium arsenide crystal substrate (hereinafter simply referred to as a crystal substrate) 8 is placed on a graphite support 4 installed in a quartz reaction tube 1 through a sample introduction port 3,
The vicinity of the crystal substrate 8 is heated by the high frequency coil 7 . On the other hand, trimethylgallium, which is an organometallic raw material, and arsine, which is a raw material for arsenic, are at the inlet of the reaction tube.
It is fed into the reaction tube 1, thermally decomposed near the heated crystal substrate, and epitaxially grows on the surface of the crystal substrate 8. At the same time, a gas inert to the reaction is fed into the reaction tube 1 from the gas inlet 5. Therefore, the raw material gas that has passed through the reaction section in the vicinity of the crystal substrate is quickly discharged from the gas outlet 6 without flowing in the direction of the sample introduction port 3. At this time, a small amount of gallium arsenide is precipitated not only on the crystal surface of the crystal substrate 8 but also on the heated graphite support 4 and the wall of the reaction tube near the graphite support 4, but as seen in conventional vapor phase growth equipment. This eliminates the possibility of precipitation and adhesion to the entire downstream portion of the wall of the reaction tube. Therefore, the crystal substrate 8 on which the thin film growth has been completed
When the sample is taken out from the sample introduction port 3, gallium arsenide does not fall onto the surface of the substrate. Furthermore, deposits deposited on the reaction tube wall can be removed with hydrogen chloride gas without the crystal substrate being placed, so when the crystal substrate 8 is next installed from the sample introduction port 3, gallium arsenide will be deposited on the substrate surface. There is no chance of it falling down. In this way, according to this embodiment, it is possible to maintain the surface condition of the crystal substrate in good condition.
第２図は本発明の気相成長装置の他の実施例で
あつて、ガリウム砒素及びアルミニウム砒素を成
長させることのできる実施例の断面図を示す。 FIG. 2 shows a cross-sectional view of another embodiment of the vapor phase growth apparatus of the present invention, which is capable of growing gallium arsenide and aluminum arsenide.
この気相成長装置は内管１０と外管１１との２
重構造よりなる石英反応管１２を備えている。こ
のように反応管１２を２重構造とするのは、ガス
流の制御を第１図の実施例よりも容易にするため
である。石英反応管１２の内管１０の端部には原
料ガスを送り込むための反応管入口１３が形成さ
れており、内管１０の内壁には結晶基板を配置す
るためのグラフアイト支持台１４が設けられてい
る。グラフアイト支持台１４の下流側に隣接する
内管壁部には内管１０と外管１１との間の空間１
５に通じる内部ガス排出口１６が形成されてい
る。内管１０の下流側端部１７は図示のように内
部に突き出た外管の突出部１８につながつてい
る。そして内管と外側の外管とは一緒になつて閉
じた（内部ガス排出口１６を除いて）空間１５を
形成する。突出部１８より下流側の外管部には反
応に不活性なガスを送りこむためのガス導入口１
９が形成され、及び空間１５を形成する外管部に
は原料ガス、輸送ガス及び不活性ガスを排出する
ためのガス排出口２０が形成されている。外管１
１の下流側端部には結晶基板を装着及び取出すた
めのサンプル導入口２１が形成され、グラフアイ
ト支持台１４が位置する反応管１２の外部には高
周波加熱用の高周波コイル２２が設けられてい
る。 This vapor phase growth apparatus consists of an inner tube 10 and an outer tube 11.
It is equipped with a quartz reaction tube 12 having a multilayer structure. The reason why the reaction tube 12 has a double structure is to make it easier to control the gas flow than in the embodiment shown in FIG. A reaction tube inlet 13 for feeding raw material gas is formed at the end of the inner tube 10 of the quartz reaction tube 12, and a graphite support 14 is provided on the inner wall of the inner tube 10 for placing a crystal substrate. It is being A space 1 between the inner tube 10 and the outer tube 11 is formed in the inner tube wall adjacent to the downstream side of the graphite support 14.
An internal gas outlet 16 is formed which leads to 5. The downstream end 17 of the inner tube 10 is connected to an inwardly projecting protrusion 18 of the outer tube as shown. The inner tube and the outer outer tube together form a closed space 15 (except for the internal gas outlet 16). The outer tube part downstream of the protruding part 18 has a gas inlet 1 for feeding inert gas into the reaction.
9 is formed, and a gas outlet 20 for discharging raw material gas, transport gas, and inert gas is formed in the outer tube portion forming space 15. Outer tube 1
A sample introduction port 21 for mounting and taking out a crystal substrate is formed at the downstream end of the reaction tube 1, and a high frequency coil 22 for high frequency heating is provided outside the reaction tube 12 where the graphite support 14 is located. There is.
このような構成の気相成長装置において、結晶
基板２３をグラフアイト支持台１４にサンプル導
入口２１より配置し、高周波コイル２２により結
晶基板２３の近傍を加熱する。結晶基板２３は高
周波誘導により加熱されたグラフアイト支持台１
４により600℃〜850℃に保持される。そしてガリ
ウム及びアルミニウムの原料であるトリメチルガ
リウム及びトリメチルアルミニウム（trimethyle
aluminum）及び砒素原料であるアルシンを、反
応管入口１３より反応管１２の内管１０の内部に
送り込む。送り込まれたトリメチルガリウムおよ
びトリメチルアルミニウム及びアルシンは結晶基
板２３の近傍において熱分解しガリウム砒素及び
アルミニウム砒素として析出する。これと同時に
反応に不活性なガス、ここでは水素をガス導入口
１９より導入する。したがつて結晶基板近傍の反
応部を通過した原料ガスはサンプル導入口２１の
方向に向つて流れることなく内部ガス排出口１６
及びガス排出口２０を通り反応管１２より速やか
に排出される。この結果内部ガス排出口１６より
サンプル導入口２１までに至る管壁にはガリウム
砒素およびアルミニウム砒素が全く付着すること
がない。 In the vapor phase growth apparatus having such a configuration, the crystal substrate 23 is placed on the graphite support 14 through the sample introduction port 21, and the vicinity of the crystal substrate 23 is heated by the high frequency coil 22. The crystal substrate 23 is a graphite support base 1 heated by high frequency induction.
4, the temperature is maintained at 600°C to 850°C. And trimethylgallium and trimethylaluminum (trimethyle), which are the raw materials for gallium and aluminum.
aluminum) and arsine, which is an arsenic raw material, are fed into the inner tube 10 of the reaction tube 12 from the reaction tube inlet 13. The fed trimethylgallium, trimethylaluminum, and arsine are thermally decomposed near the crystal substrate 23 and precipitated as gallium arsenide and aluminum arsenide. At the same time, a gas inert to the reaction, in this case hydrogen, is introduced from the gas inlet 19. Therefore, the raw material gas that has passed through the reaction section near the crystal substrate does not flow toward the sample inlet 21 but instead flows through the internal gas outlet 16.
The gas is then quickly discharged from the reaction tube 12 through the gas discharge port 20. As a result, no gallium arsenide or aluminum arsenide adheres to the tube wall extending from the internal gas outlet 16 to the sample inlet 21.
本実施例の気相成長装置によつて実験した結
果、従来の気相成長装置によつて成長される薄膜
にみられるような結晶表面の欠陥（1000個／
cm2）は100〜500個／cm2以下となることが判明し
た。 As a result of experiments using the vapor phase growth apparatus of this example, we found that defects on the crystal surface (1000 defects/
cm 2 ) was found to be 100 to 500 pieces/cm 2 or less.
以上の説明から明らかなように本発明によれば
結晶表面の汚染を抑え良好な結晶表面を得ること
ができるので従来の気相成長装置に比較して半導
体素子の歩留りを格段に向上させることが可能と
なる。
As is clear from the above description, according to the present invention, contamination of the crystal surface can be suppressed and a good crystal surface can be obtained, so the yield of semiconductor devices can be significantly improved compared to conventional vapor phase growth equipment. It becomes possible.
第１図は本発明の一実施例を示す断面図、第２
図は本発明の他の実施例を示す断面図である。
１，１２……石英反応管、２，１３……反応管
入口、３，２１……サンプル導入口、４，１４…
…グラフアイト支持台、５，１９……ガス導入
口、６，２０……ガス排出口、７，２２……高周
波コイル、８，２３……結晶基板、１０……内
管、１１……外管、１５……空間、１６……内部
ガス排出口。
FIG. 1 is a cross-sectional view showing one embodiment of the present invention, and FIG.
The figure is a sectional view showing another embodiment of the present invention. 1,12...Quartz reaction tube, 2,13...Reaction tube inlet, 3,21...Sample introduction port, 4,14...
...Graphite support stand, 5, 19... Gas inlet, 6, 20... Gas outlet, 7, 22... High frequency coil, 8, 23... Crystal substrate, 10... Inner tube, 11... Outer Pipe, 15... Space, 16... Internal gas outlet.
Claims (1)
び取出すサンプル導入口と、基板を配置する支持
台とを有する反応管を備える気相成長装置におい
て、前記反応管が、前記原料ガスのガス流に関し
て前記支持台から前記サンプル導入口に至る下流
部に、反応に不活性なガスを送り込むガス導入口
と、前記原料ガスと前記不活性なガスとを排出す
るガス排出口とを備え、前記ガス排出口と前記サ
ンプル導入口との間の反応管の管壁に結晶が生成
しないようにしたことを特徴とする気相成長装
置。1. In a vapor phase growth apparatus equipped with a reaction tube having an inlet for supplying a raw material gas, a sample inlet for mounting and taking out a substrate, and a support stand for arranging a substrate, the reaction tube has a gas flow of the raw material gas. A gas inlet for feeding an inert gas into the reaction and a gas outlet for discharging the raw material gas and the inert gas are provided downstream from the support stand to the sample inlet, and the gas A vapor phase growth apparatus characterized in that crystals are not generated on the wall of the reaction tube between the discharge port and the sample introduction port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27732784A JPS61155292A (en) | 1984-12-26 | 1984-12-26 | Vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27732784A JPS61155292A (en) | 1984-12-26 | 1984-12-26 | Vapor growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61155292A JPS61155292A (en) | 1986-07-14 |
| JPH0529637B2 true JPH0529637B2 (en) | 1993-05-06 |
Family
ID=17581980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27732784A Granted JPS61155292A (en) | 1984-12-26 | 1984-12-26 | Vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61155292A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2818776B2 (en) * | 1989-04-29 | 1998-10-30 | 豊田合成株式会社 | Gallium nitride based compound semiconductor vapor phase growth equipment |
| EP0459425A1 (en) * | 1990-05-30 | 1991-12-04 | Idemitsu Petrochemical Company Limited | Process for the preparation of diamond |
-
1984
- 1984-12-26 JP JP27732784A patent/JPS61155292A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61155292A (en) | 1986-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |