JPH0533265B2 - - Google Patents
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- Publication number
- JPH0533265B2 JPH0533265B2 JP59256175A JP25617584A JPH0533265B2 JP H0533265 B2 JPH0533265 B2 JP H0533265B2 JP 59256175 A JP59256175 A JP 59256175A JP 25617584 A JP25617584 A JP 25617584A JP H0533265 B2 JPH0533265 B2 JP H0533265B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- discharge
- fluorine
- molded article
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/12—Chemical modification
- C08J7/123—Treatment by wave energy or particle radiation
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、潤滑性、撥水性、光透過性、耐候
性、帯電防止性等の特性を有し、このためこれら
の特性が要求される種々の用途に用いられる、フ
ツ素含有表面薄層を有する成形品に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention has properties such as lubricity, water repellency, light transparency, weather resistance, and antistatic property, and therefore these properties are required. The present invention relates to a molded article having a fluorine-containing thin surface layer used for various purposes.
(従来の技術及びその問題点)
高分子物質からなる基材に、該基材が保有しな
い特性を有する表面層を設ける試みは従来より数
多くなされており、現在その簡便さの故に広く行
なわれているのは、大気中でフツ素系添加剤を含
む重合体の溶液を、同一重合体からなる基材上に
湿式塗布、加熱乾燥して、基材上にフツ素系添加
剤含有表面層を形成させる方法であるが、この方
法は下記のような欠点がある。(Prior art and its problems) Many attempts have been made in the past to provide a surface layer having characteristics not possessed by the base material on a base material made of a polymeric substance. A solution of a polymer containing a fluorine-based additive is wet-coated in the atmosphere onto a base material made of the same polymer, and then dried by heating to form a surface layer containing a fluorine-based additive on the base material. However, this method has the following drawbacks.
(イ) 表面層の形成に際してフツ素系添加剤含有重
合体溶液を基材に塗布するウエツトプロセスが
あるため、塗布された重合体溶液を加熱乾燥す
る必要があり、そのため融点や転移点の低い熱
可塑性高分子シートやプラスチツク成形品は寸
法安定性が損われるので基材として使用できな
い。(b) When forming the surface layer, there is a wet process in which a polymer solution containing a fluorine-based additive is applied to the base material, so it is necessary to heat and dry the applied polymer solution, which reduces the melting point and transition point. Low thermoplastic polymer sheets and plastic molded products cannot be used as base materials because their dimensional stability is impaired.
(ロ) 最近真空蒸着法、スパツタリング法、イオン
プレーテイング法などにより、平面、球面、凸
凹面等の形状の如何に拘らず極めて薄く、しか
も均一な表面層を有する成形品が工業的に得ら
れているが、上記のフツ素系添加剤含有重合体
溶液の基材上への湿式塗布方法では、薄く均一
な表面層が得られにくい。(b) Recently, molded products with extremely thin and uniform surface layers have been industrially obtained using vacuum evaporation methods, sputtering methods, ion plating methods, etc., regardless of the shape, such as flat, spherical, uneven surfaces, etc. However, with the above-mentioned wet coating method of a fluorine additive-containing polymer solution onto a substrate, it is difficult to obtain a thin and uniform surface layer.
(ハ) 溶剤を使用するので爆発や中毒の危険性があ
る。(c) Since a solvent is used, there is a risk of explosion or poisoning.
(ニ) フツ素系添加剤含有表面層と基材との接着性
が十分でなく、使用中にフツ素含有表面層が基
材から剥離しやすい。(d) Adhesion between the fluorine-containing additive-containing surface layer and the base material is insufficient, and the fluorine-containing surface layer is likely to peel off from the base material during use.
(ホ) フツ素系添加剤含有表面層が使用中に溶解流
失してその機能が低下する。(e) The surface layer containing the fluorine-based additive dissolves and disappears during use, reducing its functionality.
ウエツトプロセスによりフツ素系添加剤含有表
面層を基材上に設ける上記の従来技術の欠点を解
決するものとして低温プラズマ重合法が知られて
おり、これは0.01〜10トール(Torr)の真空下
でN2,Ar,He等のキヤリアガスの放電プラズマ
とモノマー有機ガスとを混合し、被処理基材表面
にこれらの混合ガスを接触させることにより、該
基材表面にプラズマ重合膜を形成させるものであ
る。この重合膜の形成は、J.L.VossenおよびW.
Kern編「Thin Film Processes」Academic
Press,New York(1978)第365頁記載のCAP図
(Competitive Ablation and Polymerization
Scheme)に示される現象、すなわち重合
(Polymerization)と削減(Ablation)との競走
反応によるものとしてとらえられている。 A low-temperature plasma polymerization method is known as a method that solves the above-mentioned drawbacks of the conventional technology in which a surface layer containing a fluorine-based additive is formed on a substrate by a wet process. Below, a discharge plasma of a carrier gas such as N 2 , Ar, He, etc. is mixed with a monomer organic gas, and by bringing these mixed gases into contact with the surface of the substrate to be treated, a plasma polymerized film is formed on the surface of the substrate. It is something. The formation of this polymeric film was described by JLVossen and W.
“Thin Film Processes” Academic, edited by Kern
Press, New York (1978) p. 365 CAP diagram (Competitive Ablation and Polymerization)
It is thought that this phenomenon is caused by a competing reaction between polymerization and ablation, as shown in Scheme 1.
しかしながら上記プラズマ重合法は、窒素、ケ
イ素および不飽和結合を有する化合物の重合膜を
基材表面上に形成する場合には極めて有効な方法
であるが、酸素やハロゲンを有する化合物、特に
フツ素化合物の重合膜を基材上に形成することが
困難であるという欠点があつた。 However, the plasma polymerization method described above is an extremely effective method for forming a polymer film of compounds containing nitrogen, silicon, and unsaturated bonds on the surface of a substrate, but it is not suitable for forming a polymer film of compounds containing nitrogen, silicon, and unsaturated bonds on the surface of a substrate. The drawback was that it was difficult to form a polymer film on a substrate.
そこで上記プラズマ重合法の欠点を解消するた
めに、例えば()反応系にH2ガスあるいはケ
イ素元素を添加する。特に基材として水素を含有
しないあるいは出現しないものに対しては反応系
にH2ガスを添加する、()モノマー原料とし
て、テトラフルオロエチレン等の炭素−炭素二重
結合を有する反応系フツ素化合物を用いる、()
基材としてポリエチレン、ポリプロピレン等の
H2が出現するポリマーを用いる等のプラズマ放
電法によりフツ素含有表面層を基材上に形成させ
ることが行われており(E.Kay,IUPAC
Synposium on plasma Chemistry,Limoges,
France(1977)およびT.Masuoka,H.Yasuda,
J.Polym,Sci.,20,2633〜2642(1982)参照)、
この方法はフツ素含有表面層を基材上に形成させ
るという点ではその目的を達成するが、他方、
H2ガスの爆発の危険性、炭素−炭素二重結合を
有するフツ素化合物の爆発や中毒の危険性などの
欠点があつた。 Therefore, in order to eliminate the drawbacks of the plasma polymerization method described above, for example, H 2 gas or silicon element is added to the reaction system (2). In particular, for base materials that do not contain hydrogen or do not appear, H2 gas is added to the reaction system.() As a monomer raw material, a reaction system fluorine compound having a carbon-carbon double bond such as tetrafluoroethylene using ()
Polyethylene, polypropylene, etc. are used as base materials.
A fluorine-containing surface layer has been formed on a substrate by a plasma discharge method using a polymer in which H 2 appears (E. Kay, IUPAC
Symposium on plasma Chemistry,Limoges,
France (1977) and T. Masuoka, H. Yasuda,
J. Polym, Sci., 20, 2633-2642 (1982)),
While this method achieves its purpose in terms of forming a fluorine-containing surface layer on the substrate, it also
There were drawbacks such as the risk of explosion due to H2 gas and the risk of explosion and poisoning due to the fluorine compound containing carbon-carbon double bonds.
一方、ポリエチレン、ポリプロピレンなどの有
機高分子化合物を、CF4,CHF3等フツ素炭化水
素やフツ素炭素から生成される含フツ素プラズマ
に接触させることにより、有機高分子化合物の表
面領域にフツ素を導入し改質する方法が提案され
ている(特開昭55−99932号)。この方法では、上
記()の問題のほかに改質される材料の表面に
エツチングに起因する粗さが形成されるという難
点がある。 On the other hand, by bringing an organic polymer compound such as polyethylene or polypropylene into contact with fluorine-containing plasma generated from fluorine hydrocarbons or fluorocarbons such as CF 4 or CHF 3 , the surface area of the organic polymer compound is exposed to fluorine. A method has been proposed in which a substance is introduced and modified (Japanese Patent Application Laid-open No. 55-99932). In addition to the above problem (), this method has the disadvantage that roughness is formed on the surface of the material to be modified due to etching.
(発明の目的)
本発明の目的は、上記した従来技術の欠点を改
良し、潤滑性、撥水性、光透過性、耐候性、帯電
防止性等の諸特性を有し、このためこれらの特性
が要求される種々の用途に用いられる、フツ素含
有表面薄層を有する成形品を極めて安全に提供す
ることにある。(Objective of the Invention) The object of the present invention is to improve the above-mentioned drawbacks of the prior art and to provide various properties such as lubricity, water repellency, light transmittance, weather resistance, and antistatic property. An object of the present invention is to extremely safely provide a molded article having a thin fluorine-containing surface layer, which can be used in various applications requiring fluorine.
(目的を解決するための手段)
本発明者らは種々検討した結果、不燃性等の利
点を有するものの非反応性であると認識され、従
来プラズマ処理により基材上に薄層を形成しにく
いと考えられていたSF6などのフツ化硫黄化合物
が驚くべきことにプラズマ放電により基材上に潤
滑性、撥水性、光透過性、耐候性、帯電防止性等
を有する強固なフツ素含有薄層を、全体としての
基材の性質を変えることなく形成することを見出
しこの知見に基づき本発明を完成させた。(Means for Solving the Object) As a result of various studies, the present inventors recognized that although it has advantages such as nonflammability, it is non-reactive, and it is difficult to form a thin layer on a base material by conventional plasma treatment. Surprisingly, sulfur fluoride compounds such as SF 6 , which had been thought to be effective, have surprisingly been produced by plasma discharge into a strong fluorine-containing thin film that has lubricity, water repellency, light transparency, weather resistance, antistatic properties, etc. It was discovered that the layer can be formed without changing the properties of the base material as a whole, and the present invention was completed based on this knowledge.
すなわち、本発明の要旨は、フツ化硫黄化合物
をプラズマ処理することにより基材上にフツ素含
有薄層を形成させてなるフツ素含有表面薄層を有
する成形品にある。 That is, the gist of the present invention is a molded article having a fluorine-containing thin surface layer formed by forming a fluorine-containing thin layer on a base material by subjecting a sulfur fluoride compound to plasma treatment.
本発明の成形品の製造において原料として用い
られるフツ素化合物としては、常温で気体あるい
は放電処理時の温度で気体化するフツ化硫黄化合
物であればいずれも使用でき、その例として低毒
性、不燃性、非腐食性等を備えたSF6等が挙げら
れる。これは単独又は併用でき、更に放電電圧の
調整等の目的として、不活性ガス例えばN2,
Ar,He等のガスで希釈して用いることもでき
る。 As the fluorine compound used as a raw material in the production of the molded article of the present invention, any sulfur fluoride compound that is gasified at room temperature or gasified at the temperature during discharge treatment can be used. Examples include SF 6 , which has properties such as corrosion resistance and non-corrosion properties. This can be used alone or in combination, and for the purpose of adjusting the discharge voltage, an inert gas such as N 2 ,
It can also be used after being diluted with a gas such as Ar or He.
また本発明の成形品の製造において用いられる
基材としては、天然高分子、合成高分子、セラミ
ツクス等が挙げられ、これらは単独でまたは混合
体で用いられる。 Further, examples of the base material used in the production of the molded article of the present invention include natural polymers, synthetic polymers, ceramics, etc., and these may be used alone or in a mixture.
上記天然高分子としては、綿、麻、絹、木材等
を挙げることができ、また合成高分子としては、
ナイロン、ポリエステル、ポリカーボネート、ポ
リアセタール、ポリスルホン、ポリエーテルスル
ホン、ポリエステルエーテルケトン、ポリアクリ
レート、ポリイミド、ポリアラミド、ポリビニル
アルコール、ポリウレタン、ポリメタクリレー
ト、ポリセルロース、ポリエポキシド、ポリ塩化
ビニル等が挙げられ、さらにセラミツクスとして
は、ケイ酸塩ガラス、石英ガラス、ホウ酸塩ガラ
スおよびリン酸塩ガラス等のガラス類、アルミナ
セメント、ボルトランドセメントおよびマグネシ
アセメント等のセメント類、ジルコン磁器、アル
ミナ磁器およびチタン磁器等の磁器類が挙げら
れ、その他として銅、アルミニウム、鉄、ニツケ
ルおよびインジウム等の無機物の単独、酸化物、
アモルフアス又は合金等が挙げられる。これは、
単独又は混合されたものでもよく、更に繊維状、
板状、シート状、ブロツク状等のいかなる形状の
ものであつても差しつかえない。 Examples of the above-mentioned natural polymers include cotton, hemp, silk, wood, etc., and examples of synthetic polymers include:
Nylon, polyester, polycarbonate, polyacetal, polysulfone, polyether sulfone, polyester ether ketone, polyacrylate, polyimide, polyaramid, polyvinyl alcohol, polyurethane, polymethacrylate, polycellulose, polyepoxide, polyvinyl chloride, etc., and ceramics include , glasses such as silicate glass, quartz glass, borate glass and phosphate glass, cements such as alumina cement, Bortland cement and magnesia cement, porcelains such as zircon porcelain, alumina porcelain and titanium porcelain. In addition, inorganic substances such as copper, aluminum, iron, nickel and indium, oxides,
Examples include amorphous amorphous or alloys. this is,
They may be used alone or in combination, and may also be fibrous,
It may be of any shape, such as a plate, sheet, or block.
フツ化硫黄化合物を使用するプラズマ処理にお
いて好ましく用いられるプラズマ放電装置は、原
料蒸気供給系、キヤリアガス供給系、プラズマ発
生系、プラズマ反応系および排気系から基本的に
構成されるものである。例えばマイクロ波放電に
よるプラズマ放電装置では、原料供給系は原料蒸
気タンクおよび流計量を備えて原料蒸気をプラズ
マ反応容器に供給する。キヤリアガス供給系はガ
ス貯蔵タンクおよび流量計を備えてプラズマ化さ
れるガスをプラズマ発生系に供給する。プラズマ
発生系は方向性結合器、スリースタブチユーナ
ー、マグネトロン発振器およびプラズマ発生領域
あるいは管を備えてこのプラズマ発生領域の一端
がプラズマ反応容器に接続されている。プラズマ
反応容器はプラズマ反応系の主体をなし、キヤパ
シタンスメータおよび被処理物支持装置を備えて
いる。更に反応容器内を排気し得るように油回転
ポンプを備えた排気系が設けられている。 A plasma discharge apparatus preferably used in plasma processing using a sulfur fluoride compound is basically composed of a raw material vapor supply system, a carrier gas supply system, a plasma generation system, a plasma reaction system, and an exhaust system. For example, in a plasma discharge device using microwave discharge, a raw material supply system includes a raw material vapor tank and a flow meter to supply raw material vapor to a plasma reaction vessel. The carrier gas supply system includes a gas storage tank and a flow meter and supplies the gas to be turned into plasma to the plasma generation system. The plasma generation system includes a directional coupler, a three-stub tuner, a magnetron oscillator, and a plasma generation region or tube, and one end of the plasma generation region is connected to a plasma reaction vessel. The plasma reaction vessel forms the main body of the plasma reaction system and is equipped with a capacitance meter and a processing object support device. Furthermore, an exhaust system equipped with an oil rotary pump is provided to exhaust the inside of the reaction vessel.
そして、本発明で用いるフツ化硫黄化合物を用
いてプラズマ処理を行うにはプラズマ発生方法と
して内部電極方式による直流グロー放電ならびに
低周波放電、内部電極方式、外部電極方式および
コイル方式による高周波放電、導波管型方式によ
るマイクロ波放電および電子サイクロトロン共鳴
放電(ECR放電)等があるが、これに限らずプ
ラズマを発生し、かつこれにより薄層を形成する
反応を起こす方法であればその他の方法でも使用
できる。また、本発明で用いる電極としては、内
部電極方式の場合には、Al,Ti,Sn,Ge,Si,
Au,P,As等を含む金属等が挙げられ、内部電
極方式以外の放電方式の場合には、上記以外に
Mo,B,W,U等を含む金属等が挙げられる。 To perform plasma treatment using the sulfur fluoride compound used in the present invention, plasma generation methods include direct current glow discharge and low frequency discharge using an internal electrode method, high frequency discharge using an internal electrode method, external electrode method, and coil method, and conduction. There are microwave discharge using a wave tube type method and electron cyclotron resonance discharge (ECR discharge), but other methods can also be used as long as they generate plasma and cause a reaction that forms a thin layer. Can be used. In addition, in the case of the internal electrode method, the electrodes used in the present invention include Al, Ti, Sn, Ge, Si,
Examples include metals containing Au, P, As, etc. In the case of a discharge method other than the internal electrode method, other than the above may be used.
Examples include metals containing Mo, B, W, U, etc.
本発明のプラズマ発生装置としては第2図に示
す高周波放電によるプラズマ放電装置及び第3図
に示すマイクロ波放電によるプラズマ放電装置の
何れも用いることができる。 As the plasma generating apparatus of the present invention, either the plasma discharge apparatus using high frequency discharge shown in FIG. 2 or the plasma discharge apparatus using microwave discharge shown in FIG. 3 can be used.
形成される表面薄層の厚さは成形品の目的とす
る用途等に応じて任意に変動されることができ、
例えば層厚0.001〜10μで十分に帯電防止性能等が
発揮される。フイルム、シート等の生産性が必要
な場合には0.001〜0.1μの厚さで連続生産が可能
となる。 The thickness of the thin surface layer formed can be arbitrarily varied depending on the intended use of the molded product, etc.
For example, a layer thickness of 0.001 to 10 μm provides sufficient antistatic performance. If productivity is required for films, sheets, etc., continuous production is possible with a thickness of 0.001 to 0.1μ.
(実施例)
以下実施例を挙げて本発明を更に説明するが、
本発明はこれらの実施例に限定されるものではな
い。(Example) The present invention will be further explained with reference to Examples below.
The present invention is not limited to these examples.
参考例 1
(1) 基材として、市販ポリエチレンテレフタレー
トフイルム(以下PETフイルムと略称する)
を、原料ガスとしてCF4を、プラズマ放電装置
として第2図に示した高周波放電によるプラズ
マ放電装置を用いて、PETフイルムをプラズ
マ放電処理した。Reference example 1 (1) Commercially available polyethylene terephthalate film (hereinafter abbreviated as PET film) was used as the base material.
A PET film was subjected to plasma discharge treatment using CF 4 as a raw material gas and a plasma discharge device using high frequency discharge shown in FIG. 2 as a plasma discharge device.
第2図に示したプラズマ放電装置は、プラズ
マ発生系(高周波電源)1、プラズマ反応系
2、原料、キヤリアガス供給路3及び排気路4
により基本的に構成され、前記プラズマ反応系
2には1.5cmの間隔を保つて一対のアルミニウ
ム電極5,5′が配置され、下部電極5′上に被
処理物である直径3.2cmの円形PETフイルム7
がセツトされた。 The plasma discharge apparatus shown in FIG. 2 includes a plasma generation system (high frequency power source) 1, a plasma reaction system 2, a raw material, a carrier gas supply path 3, and an exhaust path 4.
In the plasma reaction system 2, a pair of aluminum electrodes 5, 5' are arranged with an interval of 1.5 cm, and a circular PET with a diameter of 3.2 cm, which is the object to be processed, is placed on the lower electrode 5'. film 7
has been set.
原料、キヤリアガス供給路3を経由して原料
ガスであるCF4を1〜4トール(Torr)の圧力
下5〜50cm3/分の流速でプラズマ反応系2に導
入し、50Wのレベルで13.56MHzの高周波電力
を電極5,5′に印加して放電を起させ、0.25
〜30分間プラズマ放電処理してPETフイルム
上に表面薄層を形成させた。なお放電中PET
フイルムの温度は特に制御されなかつたが、ガ
ラス転移点(69℃)以下に保たれた。 CF 4 as a raw material gas is introduced into the plasma reaction system 2 via the raw material and carrier gas supply line 3 at a flow rate of 5 to 50 cm 3 /min under a pressure of 1 to 4 Torr, and at a level of 50 W to 13.56 MHz. A high frequency power of 0.25 is applied to the electrodes 5 and 5' to cause a discharge.
A thin surface layer was formed on the PET film by plasma discharge treatment for ~30 minutes. Furthermore, PET during discharge
The temperature of the film was not particularly controlled, but was kept below the glass transition temperature (69°C).
(2) 得られたプラズマ放電処理PETフイルムの
表面薄層についてESCAスペクトル(X線光電
子スペクトル)を測定した結果、ベンゼン環の
フツ素化に由来する−CF2−結合の形成が認め
られ、=CF−結合の形成が認められなかつたこ
とから、この表面薄層は下記の構造を有するも
のと推論される。(2) As a result of measuring the ESCA spectrum (X-ray photoelectron spectrum) of the surface thin layer of the obtained plasma discharge treated PET film, the formation of -CF 2 - bonds originating from the fluorination of the benzene ring was observed, = Since no CF-bond formation was observed, it is inferred that this surface thin layer has the following structure.
またこの表面薄層の厚さはESCA分析により
約0.002μであつた。 The thickness of this thin surface layer was found to be approximately 0.002μ by ESCA analysis.
(3) 次に水滴接触角θの、プラズマ放電処理時間
tの関数としての変化を第1図a,b,cに示
す。この図において、1つの点印(ドツト)は
3〜4回の測定の平均値を意味する。未処理
PETフイルムの接触角は70°(t=0分)であ
り、これは文献値と一致した。第1図a,b,
cにより、原料ガス流速及び圧力を変動させて
も、接触角は処理時間に依存することが認めら
れ、放電処理が始まると接触角は急速に上昇
し、10〜20分間で100〜110°に到達し、その後、
一定となつた。(3) Next, the changes in the water drop contact angle θ as a function of the plasma discharge treatment time t are shown in FIGS. 1a, b, and c. In this figure, one dot means the average value of 3 to 4 measurements. Untreated
The contact angle of the PET film was 70° (t=0 min), which was consistent with literature values. Figure 1 a, b,
c, it is recognized that the contact angle depends on the treatment time even if the raw material gas flow rate and pressure are varied; once the discharge treatment begins, the contact angle increases rapidly, reaching 100 to 110° in 10 to 20 minutes. reach and then
It became constant.
ポリテトラフルオロエチレン(PTFE)の接
触角は108°であるので、本例において10〜20分
間CF4プラズマ放電処理されたPETフイルム表
面はPTFEと同等の疎水性を有することが判明
した。また、処理後約24時間経過後の測定結果
及び同一試料の約2ケ月後の測定結果も誤差内
で一致した値を保持していたことを確認した。 Since the contact angle of polytetrafluoroethylene (PTFE) is 108°, the PET film surface treated with CF4 plasma discharge for 10-20 minutes in this example was found to have hydrophobicity equivalent to that of PTFE. It was also confirmed that the measurement results approximately 24 hours after the treatment and the measurement results of the same sample approximately 2 months later held consistent values within the error range.
(4) さらに走査電子顕微鏡(SEM)を用いて、
プラズマ放電処理PETフイルムの表面薄層の
表面粗さを観察した結果、この表面薄層は、未
処理PETフイルムに比べエツチングに由来す
る均一な粗さを有することが判明した。(4) Furthermore, using a scanning electron microscope (SEM),
As a result of observing the surface roughness of the thin surface layer of the plasma discharge treated PET film, it was found that this thin surface layer had a uniform roughness resulting from etching compared to the untreated PET film.
参考例 2
(1) 基材としてPETフイルムを、原料ガスとし
てCF4を、プラズマ放電装置として第3図に示
したマイクロ波放電によるプラズマ放電装置を
用いて、PETフイルムをプラズマ放電処理し
た。Reference Example 2 (1) A PET film was subjected to plasma discharge treatment using a PET film as a base material, CF 4 as a raw material gas, and a plasma discharge device using microwave discharge shown in FIG. 3 as a plasma discharge device.
第3図に示したプラズマ放電装置は、プラズ
マ発生系(マグネトロン)1、プラズマ反応系
2、原料、キヤリアガス供給路3及び排気路4
により基本的に構成され、反応系2の内部には
アルミナ管6,6′が配置され、被処理物であ
る長方形(4.5×2.5cm)のPETフイルム7が内
壁にセツトされた。 The plasma discharge apparatus shown in FIG. 3 includes a plasma generation system (magnetron) 1, a plasma reaction system 2, a raw material, a carrier gas supply path 3, and an exhaust path 4.
Alumina tubes 6, 6' were arranged inside the reaction system 2, and a rectangular (4.5 x 2.5 cm) PET film 7, which was the object to be treated, was set on the inner wall.
原料、キヤリアガス供給路3を経由して原料
ガスであるCF4を参考例1と同一条件でプラズ
マ反応系2に導入し、160Wのレベルで2450M
Hzのマイクロ波電力で放電を起させ、0.25〜30
分間プラズマ放電処理してPETフイルム上に
表面薄層を形成させた。なお放電中PETフイ
ルムの温度は特に制御されなかつたが、ガラス
転移点(69℃)以下に保たれた。 CF 4 , which is a raw material gas, is introduced into the plasma reaction system 2 under the same conditions as in Reference Example 1 via the raw material and carrier gas supply path 3, and the power is 2450M at a level of 160W.
A discharge is caused by microwave power at Hz, 0.25 to 30
A thin surface layer was formed on the PET film by plasma discharge treatment for minutes. Although the temperature of the PET film during discharge was not particularly controlled, it was kept below the glass transition point (69°C).
(2) 得られたプラズマ放電PETフイルムの表面
薄層についてESCAスペクトルを測定した結
果、参考例1で得られたプラズマ放電PETフ
イルムの表面薄層と同様の構造を有することが
確認された。(2) As a result of measuring the ESCA spectrum of the surface thin layer of the obtained plasma discharge PET film, it was confirmed that it had the same structure as the surface thin layer of the plasma discharge PET film obtained in Reference Example 1.
(3) 次に水滴接触角θの、プラズマ放電処理時間
tの関数としての変化を第1図dに示す。この
図において1つの点(ドツト)は3〜4回の測
定の平均値を意味する。第1図dより、接触角
は放電処理が始まると急速に上昇し、20分間で
約105°に到達し、その後一定となつた。従つて
本例において20分間CF4プラズマ放電処理され
たPETフイルム表面はPTFEと同等の疎水性
を有することが判明した。また、処理後約24時
間経過後の測定結果及び試料の約2ケ月後の測
定結果も誤差内で一致した値を保持していたこ
とを確認した。(3) Next, FIG. 1d shows the change in the water droplet contact angle θ as a function of the plasma discharge treatment time t. In this figure, one point (dot) means the average value of 3 to 4 measurements. From FIG. 1d, the contact angle rapidly increased when the discharge treatment started, reached about 105° in 20 minutes, and then became constant. Therefore, in this example, the surface of the PET film treated with CF 4 plasma discharge for 20 minutes was found to have hydrophobicity equivalent to that of PTFE. Furthermore, it was confirmed that the measurement results about 24 hours after the treatment and the measurement results of the samples about 2 months later also held consistent values within the error range.
(4) さらに走査電子顕微鏡(SEM)を用いて、
プラズマ放電処理PETフイルムの表面薄膜層
の表面粗さを観察した結果、この表面薄層は未
処理PETフイルムと同様な平滑性を有し、こ
の点で均一な粗さを有する参考例1のプラズマ
放電処理PETフイルムの表面薄層と相違する
ことが判明した。(4) Furthermore, using a scanning electron microscope (SEM),
As a result of observing the surface roughness of the surface thin film layer of the plasma discharge treated PET film, this surface thin layer had the same smoothness as the untreated PET film, and in this respect, the plasma discharge treated PET film of Reference Example 1 had a uniform roughness. It was found that this was different from the surface thin layer of discharge treated PET film.
実施例
(1) 基材としてPETフイルムを、原料としてSF6
を用いて参考例1と同一のプラズマ放電装置に
てプラズマ放電処理をした。Example (1) PET film as base material, SF 6 as raw material
Plasma discharge treatment was carried out using the same plasma discharge apparatus as in Reference Example 1.
原料であるSF6を1〜2トール(Torr)の圧
力下で10scc/分の流速で、不活性ガスHeと共
にプラズマ反応系2に導入し、30Wのレベルで
13.56MHzの高周波電力を電極に印加して放電
を起こさせ、1〜30分間のプラズマ放電による
処理をしてPETフイルム上に薄層を形成させ
た。 The raw material SF 6 was introduced into the plasma reaction system 2 together with an inert gas He at a flow rate of 10 scc/min under a pressure of 1 to 2 Torr (Torr), and at a level of 30 W.
A high frequency power of 13.56 MHz was applied to the electrode to generate a discharge, and a thin layer was formed on the PET film by plasma discharge treatment for 1 to 30 minutes.
(2) 水滴接触角度θの、プラズマ放電処理時間t
の関数としての変化を第1図eに示す。この図
において1つの点(ドツト)は3〜4回の測定
の平均値を意味する。第1図eより、接触角は
放電処理が始まると急速に上昇し、20分間で約
108°に達し、その後一定となつた。従つて本例
において、20分間SF6プラズマ放電処理された
PETフイルム表面は、PTFEと同等の疎水性
を有することが判明した。(2) Plasma discharge treatment time t for water droplet contact angle θ
The variation as a function of is shown in Figure 1e. In this figure, one point (dot) means the average value of 3 to 4 measurements. From Figure 1e, the contact angle increases rapidly when the discharge treatment begins, and approximately
It reached 108° and then became constant. Therefore, in this example, the sample was treated with SF 6 plasma discharge for 20 minutes.
It was found that the PET film surface has hydrophobicity equivalent to that of PTFE.
(発明の効果)
本発明のフツ素含有表面薄層を有する成形品
は、その製造に際して低毒性、不燃性、非腐食性
を有するフツ化硫黄化合物を用いるので、従来の
プラズマ放電処理に比べて、爆発等の危険が少な
く安全であるという利点がある。(Effects of the Invention) The molded product having a thin fluorine-containing surface layer of the present invention uses a sulfur fluoride compound that has low toxicity, non-flammability, and non-corrosion properties during its manufacture, so it is more effective than conventional plasma discharge treatment. It has the advantage of being safe with little risk of explosion.
また本発明のフツ素含有表面薄層を有する成形
品は、潤滑性、撥水性、光透過性、耐候性、帯電
防止性、平滑性等の特性を有し、下記の用途に好
ましく用いられる。 Furthermore, the molded article having a fluorine-containing thin surface layer of the present invention has properties such as lubricity, water repellency, light transmittance, weather resistance, antistatic property, and smoothness, and is preferably used in the following applications.
(イ) 潤滑性を要求される磁気テープ、磁気デイス
ク、光記録デイスク、磁気テープのリーダーテ
ープやトレーラーテープ、カメラ・時計等の精
密機器の摺動部品、セラミツク人口骨関節等の
摺動部材あるいは高分子ポリマーの剥離材等、
(ロ) 撥水性を要求される防水性地図情報フイル
ム、薬品・精密機器の防湿フイルム、水産業用
網、サンルーフを含む乗物用窓材、高層ビル用
も含む窓材、屋根瓦、傘等の雨具あるいは包装
パツケージ等、
(ハ) 光透過性を要求される植物育成用農業用フイ
ルム、ソーラーコレクタ用フイルムあるいは赤
外線吸収セル等、
(ニ) 耐候性を要求される軽量・昼間証明費の節減
等の効果がある野外用屋根材等、
(ホ) 帯電防止性を要求される防塵用壁材、写真用
製版用フイルム、防塵服、レコード等、
(ニ) その他人工欠陥、人工臓器、血液バツク等の
医用材、酸素、水素等を高度分離する多孔質材
等。(b) Magnetic tapes, magnetic disks, optical recording disks, magnetic tape leader tapes and trailer tapes that require lubricity, sliding parts of precision equipment such as cameras and watches, sliding parts of ceramic artificial bone joints, etc. (b) Waterproof map information film that requires water repellency, moisture-proof film for pharmaceuticals and precision equipment, nets for the fishing industry, vehicle window materials including sunroofs, and windows including those for high-rise buildings. materials, roof tiles, rain gear such as umbrellas, packaging packages, etc. (c) Agricultural films for growing plants that require light transparency, films for solar collectors, infrared absorption cells, etc. (d) Weather resistance is required Outdoor roofing materials that are lightweight and have the effect of reducing daytime certification costs, etc. (e) Dust-proof wall materials that require antistatic properties, photolithography films, dust-proof clothing, records, etc., (d) Other artificial materials. Medical materials such as defects, artificial organs, blood bags, porous materials that highly separate oxygen, hydrogen, etc.
第1図は本発明のプラズマ処理フイルム及び比
較例1のプラズマ処理フイルムの水滴接触角と処
理時間の関係を示すグラフ、第2図は本発明の成
形品の製造において用いられる高周波放電による
プラズマ放電装置の概略図、第3図は本発明の成
形品の製造において用いられるマイクロ波放電に
よるプラズマ放電装置の概略図である。
1……プラズマ発生系、2……プラズマ反応
系、3……原料、キヤリアガス供給路、4……排
気路、5,5′……電極、6,6′……管、7……
被処理物。
Figure 1 is a graph showing the relationship between water drop contact angle and treatment time for the plasma-treated film of the present invention and the plasma-treated film of Comparative Example 1. Figure 2 is a graph showing the plasma discharge by high-frequency discharge used in the production of the molded article of the present invention. Schematic diagram of the apparatus. FIG. 3 is a schematic diagram of a plasma discharge apparatus using microwave discharge used in manufacturing the molded article of the present invention. 1... Plasma generation system, 2... Plasma reaction system, 3... Raw material, carrier gas supply path, 4... Exhaust path, 5, 5'... Electrode, 6, 6'... Tube, 7...
Object to be processed.
Claims (1)
より基材上にフツ素含有薄層を形成させてなるフ
ツ素含有表面薄層を有する成形品。 2 前記フツ化硫黄化合物がSF6である特許請求
の範囲第1項記載の成形品。 3 前記プラズマ処理が高周波放電またはマイク
ロ波放電により行なわれる特許請求の範囲第1項
記載の成形品。 4 前記基材が天然高分子、合成高分子及びセラ
ミツクスからなる群から選択される1種の材料で
ある特許請求の範囲第1項記載の成形品。 5 前記基材が天然高分子、合成高分子及びセラ
ミツクスからなる群から選択される少なくとも2
種の材料の混合体である特許請求の範囲第1項記
載の成形品。 6 前記合成高分子がポリエチレンテレフタレー
トである特許請求の範囲第4項または第5項記載
の成形品。[Scope of Claims] 1. A molded article having a fluorine-containing thin surface layer formed by forming a fluorine-containing thin layer on a base material by subjecting a sulfur fluoride compound to plasma treatment. 2. The molded article according to claim 1, wherein the sulfur fluoride compound is SF 6 . 3. The molded article according to claim 1, wherein the plasma treatment is performed by high frequency discharge or microwave discharge. 4. The molded article according to claim 1, wherein the base material is one type of material selected from the group consisting of natural polymers, synthetic polymers, and ceramics. 5 The base material is at least two selected from the group consisting of natural polymers, synthetic polymers, and ceramics.
The molded article according to claim 1, which is a mixture of seed materials. 6. The molded article according to claim 4 or 5, wherein the synthetic polymer is polyethylene terephthalate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256175A JPS61133239A (en) | 1984-12-03 | 1984-12-03 | Molded article having surface thin layer containing fluorine |
| JP4294641A JPH0794567B2 (en) | 1984-12-03 | 1992-11-02 | Method for producing molded article having fluorine-containing thin surface layer |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59256175A JPS61133239A (en) | 1984-12-03 | 1984-12-03 | Molded article having surface thin layer containing fluorine |
| JP4294641A JPH0794567B2 (en) | 1984-12-03 | 1992-11-02 | Method for producing molded article having fluorine-containing thin surface layer |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4294641A Division JPH0794567B2 (en) | 1984-12-03 | 1992-11-02 | Method for producing molded article having fluorine-containing thin surface layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61133239A JPS61133239A (en) | 1986-06-20 |
| JPH0533265B2 true JPH0533265B2 (en) | 1993-05-19 |
Family
ID=26542606
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59256175A Granted JPS61133239A (en) | 1984-12-03 | 1984-12-03 | Molded article having surface thin layer containing fluorine |
| JP4294641A Expired - Lifetime JPH0794567B2 (en) | 1984-12-03 | 1992-11-02 | Method for producing molded article having fluorine-containing thin surface layer |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4294641A Expired - Lifetime JPH0794567B2 (en) | 1984-12-03 | 1992-11-02 | Method for producing molded article having fluorine-containing thin surface layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (2) | JPS61133239A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61200134A (en) * | 1985-02-28 | 1986-09-04 | Japan Synthetic Rubber Co Ltd | Rigic plastic article coated with plasma-polymerized film |
| ITMI20041035A1 (en) * | 2004-05-24 | 2004-08-24 | Hysytech Srl | METHOD FOR MANUFACTURING COMPONENTS FOR COMBUSTIBLE AND COMBUSTIBLE CELL MADE WITH SUCH METHOD |
| US7244291B2 (en) * | 2005-05-02 | 2007-07-17 | 3M Innovative Properties Company | Electret article having high fluorosaturation ratio |
| WO2011155409A1 (en) | 2010-06-07 | 2011-12-15 | 新日鐵化学株式会社 | Lenticular lens sheet and process for production thereof, and optical element |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5599932A (en) * | 1979-01-24 | 1980-07-30 | Hitachi Ltd | Surface treatment of organic high polymer |
| JPS5956724A (en) * | 1982-09-27 | 1984-04-02 | Isamu Kato | Formation of thin film by microwave plasma |
| JPS60248742A (en) * | 1984-05-23 | 1985-12-09 | Agency Of Ind Science & Technol | Surface modification of polyvinyl chloride resin molded article |
| JPS6160730A (en) * | 1984-09-03 | 1986-03-28 | Hiraoka & Co Ltd | Surface modification of polyvinyl chloride resin molding |
-
1984
- 1984-12-03 JP JP59256175A patent/JPS61133239A/en active Granted
-
1992
- 1992-11-02 JP JP4294641A patent/JPH0794567B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61133239A (en) | 1986-06-20 |
| JPH0665408A (en) | 1994-03-08 |
| JPH0794567B2 (en) | 1995-10-11 |
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