JPH0761434B2 - Material permeable membrane - Google Patents
Material permeable membraneInfo
- Publication number
- JPH0761434B2 JPH0761434B2 JP63063195A JP6319588A JPH0761434B2 JP H0761434 B2 JPH0761434 B2 JP H0761434B2 JP 63063195 A JP63063195 A JP 63063195A JP 6319588 A JP6319588 A JP 6319588A JP H0761434 B2 JPH0761434 B2 JP H0761434B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- compound
- fluorine
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012528 membrane Substances 0.000 title claims description 3
- 239000000463 material Substances 0.000 title description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 17
- 229910052731 fluorine Inorganic materials 0.000 claims description 17
- 239000011737 fluorine Substances 0.000 claims description 17
- 150000002894 organic compounds Chemical class 0.000 claims description 10
- 238000006116 polymerization reaction Methods 0.000 claims description 10
- 150000003464 sulfur compounds Chemical class 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 27
- 239000007789 gas Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- ZQBFAOFFOQMSGJ-UHFFFAOYSA-N hexafluorobenzene Chemical compound FC1=C(F)C(F)=C(F)C(F)=C1F ZQBFAOFFOQMSGJ-UHFFFAOYSA-N 0.000 description 7
- 125000000524 functional group Chemical group 0.000 description 6
- -1 perfluoro compound Chemical class 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000862 absorption spectrum Methods 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000012567 medical material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 2
- MIZLGWKEZAPEFJ-UHFFFAOYSA-N 1,1,2-trifluoroethene Chemical group FC=C(F)F MIZLGWKEZAPEFJ-UHFFFAOYSA-N 0.000 description 1
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical group FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- VBZWSGALLODQNC-UHFFFAOYSA-N hexafluoroacetone Chemical compound FC(F)(F)C(=O)C(F)(F)F VBZWSGALLODQNC-UHFFFAOYSA-N 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical compound FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Separation Using Semi-Permeable Membranes (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は、プラズマ重合反応法を用いて固体表面上に重
合体薄膜を形成する方法に関し、特に含フッ素有機化合
物とイオウ化合物を原料成分とすることにより、膜内に
−SO3 -のイオン官能基を付与することができ、電子材料
をはじめ、各種用途に有用な材料を提供するものであ
る。TECHNICAL FIELD The present invention relates to a method for forming a polymer thin film on a solid surface by using a plasma polymerization reaction method, and in particular, a fluorine-containing organic compound and a sulfur compound as raw material components. By doing so, an ionic functional group of —SO 3 — can be provided in the film, and a material useful for various applications including electronic materials is provided.
[従来の技術] 含フッ素有機化合物を用いプラズマ重合法によって含フ
ッ素化合物の薄膜を形成させる方法は公知であり、基材
表面の改質、つまり耐薬品性、撥水撥油性、耐摩耗性、
耐熱性、絶縁性など多くの特徴を目的とした検討が数多
く行われている。その中で、含フッ素有機化合物とほか
の化学物質の2成分系でのプラズマ重合膜に関しては、
パーフルオロ化合物とアンモニアの組み合わせ(特開昭
61−97008号)、含フッ素有機化合物とケイ素含有化合
物の組み合わせ(特開昭60−255111号、特開昭60−2615
28号)などが知られている。一方、含イオン性の含フッ
素高分子を化学的に合成する方法については、里川孝
臣:機能性含フッ素高分子、日刊工業新聞社、P11など
に開示されているとおりである。[Prior Art] A method of forming a thin film of a fluorine-containing compound by a plasma polymerization method using a fluorine-containing organic compound is known, and modification of a substrate surface, that is, chemical resistance, water / oil repellency, abrasion resistance,
Many studies have been conducted aiming at many features such as heat resistance and insulation. Among them, regarding the plasma polymerized film in the two-component system of the fluorine-containing organic compound and other chemical substances,
Combination of perfluoro compound and ammonia
61-97008), a combination of a fluorine-containing organic compound and a silicon-containing compound (JP-A-60-255111, JP-A-60-2615).
No. 28) is known. On the other hand, the method for chemically synthesizing an ionic fluorine-containing polymer is as disclosed in Takaomi Satokawa: Functional fluorine-containing polymer, Nikkan Kogyo Shimbun, P11, etc.
[発明が解決しようとする問題点] しかしながら、イオン官能基含有のフッ素系化合物を薄
膜化する方法は知られてなく、本発明を用いることによ
り、各種基材の表面改質を効率よく行うことができるた
め、物質透過膜、電子材料、医用材料等への応用が可能
である。[Problems to be Solved by the Invention] However, there is no known method for forming a thin film of a fluorinated compound containing an ionic functional group, and by using the present invention, surface modification of various base materials can be efficiently performed. Therefore, it can be applied to a substance permeable film, an electronic material, a medical material and the like.
[問題点を解決するための手段] 本発明者らは、含フッ素有機化合物とイオウ化合物から
成る混合ガスをプラズマ重合反応に供することにより、
膜中に−SO3H又は−SO3Fから成るイオン性官能基を効
率よく導入することに成功し本発明を完成するにいたっ
た。すなわち本発明は、含フッ素有機化合物とイオウ化
合物とをプラズマ重合反応に供することにより基材上に
形成された、分子中に−SO3−構造を有する重合体薄膜
からなることを特徴とするイオン交換性を有する物質透
過膜である。[Means for Solving the Problems] The present inventors provide a mixed gas composed of a fluorine-containing organic compound and a sulfur compound for a plasma polymerization reaction,
The present invention has been completed by succeeding in efficiently introducing an ionic functional group composed of —SO 3 H or —SO 3 F into a film. That is, the present invention is formed by subjecting a fluorine-containing organic compound and a sulfur compound to a plasma polymerization reaction to form on a substrate, an ion comprising a polymer thin film having a —SO 3 — structure in the molecule. It is a substance-permeable membrane having exchangeability.
本発明に使用できる含フッ素有機化合物は特に規定はな
いが、化合物中のフッ素含量が多い方が好ましい。ま
た、パーフルオロ化合物でかつ反応性に富む不飽和化合
物がさらに好ましい。すなわち、パーフルオロベンゼン
およびその誘導体、またはテトラフルオロエチレン、ト
リフルオロエチレン、フッ化ビニリデン、クロロトリフ
ルオロエチレンなどのフロオロオレフィン、またはヘキ
サフルオロプロペン、ヘキサフルオロアセトン、または
フロオロアルキルのアクリル酸エステルおよびメタクリ
ル酸エステル、またはフロオロビニルエステル類または
その他のパーフルオロ化合物や含フッ素有機化合物が使
用できる。また、本発明に使用できるイオン化合物とは
イオウ酸化物が望ましくSO2,SO3などであるが酸素化合
物の存在下であればH2S、SF6やその他のイオウ化合物で
も使用可能である。The fluorine-containing organic compound that can be used in the present invention is not particularly limited, but it is preferable that the compound has a large fluorine content. Further, an unsaturated compound which is a perfluoro compound and is highly reactive is more preferable. That is, perfluorobenzene and its derivatives, or fluorofluoroolefins such as tetrafluoroethylene, trifluoroethylene, vinylidene fluoride, and chlorotrifluoroethylene, or hexafluoropropene, hexafluoroacetone, or fluoroalkyl acrylate esters and Methacrylic acid esters, fluorovinyl esters or other perfluoro compounds and fluorine-containing organic compounds can be used. The ionic compound that can be used in the present invention is preferably a sulfur oxide such as SO 2 or SO 3 , but H 2 S, SF 6 and other sulfur compounds can also be used as long as they are in the presence of an oxygen compound.
含フッ素有機化合物とイオウ化合物の混合比としては、
イオウ化合物が全体の5重量%以上あればよい。イオウ
化合物が5重量%以下になると膜中のイオン性官能基の
量が少なく充分な効果が得られない。特に、膜中の高い
イオン化率を考慮した場合にはイオウ化合物が全体の20
重量%以上が好ましい。As the mixing ratio of the fluorine-containing organic compound and the sulfur compound,
It is sufficient that the sulfur compound is 5% by weight or more based on the whole. If the sulfur compound content is 5% by weight or less, the amount of ionic functional groups in the film is small and a sufficient effect cannot be obtained. In particular, when considering the high ionization rate in the film, the sulfur compounds account for 20% of the total.
It is preferably at least wt%.
以上のような本発明の原料化合物は常温、大気圧下で気
体、液体、固体と様々の様態をとっているが液体あるい
は固体に関しては減圧下で、必要に応じて加熱によって
気化させて使用される。原料化合物のプラズマ重合反応
系への供給量は、特に限定されないが、0.5〜200cm3(S
TP)/minである。The raw material compound of the present invention as described above has various modes such as gas, liquid, and solid at room temperature and atmospheric pressure. However, liquid or solid is used under reduced pressure and, if necessary, vaporized by heating. It The supply amount of the raw material compound to the plasma polymerization reaction system is not particularly limited, but is 0.5 to 200 cm 3 (S
TP) / min.
プラズマの発生に用いられる放電方式は特に限定はなく
一般に用いられる方式が利用できる。すなわち直流放
電、低周波放電、高周波放電、マイクロ波放電などを利
用して、内部電極型、あるいは無電極型のいずれかの反
応装置によりプラズマの発生が実施される。The discharge method used for generating plasma is not particularly limited, and a commonly used method can be used. That is, plasma generation is carried out by a reaction device of either an internal electrode type or an electrodeless type utilizing direct current discharge, low frequency discharge, high frequency discharge, microwave discharge, or the like.
この際の電極やコイルの形状、マイクロ波放電の場合の
キャビティやアンテナの構造も特に制約はなく一般に用
いられるプラズマ反応装置が用いられる。The shapes of the electrodes and coils at this time, and the structures of the cavity and the antenna in the case of microwave discharge are not particularly limited, and a generally used plasma reactor is used.
本発明におけるプラズマ反応帯域でのプラズマ電子温度
としては5,000〜80,000Kであり、好ましくは、6,000〜5
0,000Kである。プラズマ電子温度が5,000K未満、または
80,000K以上では、反応の効率が著しく低下する欠点が
生じる。前記の範囲のプラズマ電子温度は、反応系への
原料の供給速度、反応系の真空度によって設定すること
ができる。The plasma electron temperature in the plasma reaction zone in the present invention is 5,000 to 80,000 K, preferably 6,000 to 5
It is 0,000K. Plasma electron temperature is less than 5,000K, or
Above 80,000K, there is a drawback that the reaction efficiency is significantly reduced. The plasma electron temperature in the above range can be set by the feed rate of the raw material to the reaction system and the vacuum degree of the reaction system.
原料ガスの反応装置への供給は、原料ガスのみでもよい
がヘリウム、アルゴン等の不活性ガスやたとえばCF4な
どのような含フッ素ガスをキャリヤーガスとして用いる
こともできる。この場合の系の真空度は、1×10-3〜10
0Torrの範囲に調整することが好ましい。The raw material gas may be supplied to the reactor only by the raw material gas, but an inert gas such as helium or argon or a fluorine-containing gas such as CF 4 may be used as the carrier gas. The vacuum degree of the system in this case is 1 × 10 −3 to 10
It is preferable to adjust to the range of 0 Torr.
本発明のプラズマ重合反応を行う場合に使用できる基材
としては特に規定されることはなく、ガラス、石英、金
属、半導体、セラミックあるいはプラスチックなどの平
滑なものあるいはポーラスなものなどである。基材の形
状も板状、球状、筒状などの種々の形態が可能であり、
特に限定されることはない。これらの基材は、冷却また
は加熱されてもよく、好ましくは0℃〜200℃程度で反
応に供する。200℃以上ではプラズマ重合膜の生成速度
が遅くなる欠点がある。なおプラズマ重合膜の生成速度
は0.5〜20Å/sである。The substrate that can be used in the case of carrying out the plasma polymerization reaction of the present invention is not particularly limited, and may be a smooth or porous material such as glass, quartz, metal, semiconductor, ceramic or plastic. The shape of the base material can be various shapes such as a plate shape, a spherical shape, and a cylindrical shape.
There is no particular limitation. These substrates may be cooled or heated, and are preferably subjected to the reaction at about 0 ° C to 200 ° C. Above 200 ° C, there is a drawback that the production rate of the plasma polymerized film becomes slow. The production rate of the plasma polymerized film is 0.5 to 20Å / s.
本発明で製造されるプラズマ重合膜の膜厚としては原料
ガスの供給量、真空度あるいは反応時間等によって調整
が可能であり、10Å〜10μmの範囲内で表面性が良く均
一で欠陥のない膜を得ることができる。The film thickness of the plasma-polymerized film produced by the present invention can be adjusted by the supply amount of the source gas, the degree of vacuum, the reaction time, etc., and the film has good surface properties and is uniform and free of defects in the range of 10Å-10 μm Can be obtained.
以上のようにして得られたプラズマ重合膜は膜中に−SO
3 -のイオン官能基を有している。このことは、生成膜に
アンモニア(NH3)を反応させたのち、赤外吸収スペク
トルを測定することによって、−SO3 -NH4 +(1120cm-1、
1400cm-1)の振動の有無から確認することができる。ま
た、本発明のプラズマ重合膜は極性の高い有機溶媒に可
溶であり、膜中に架橋反応が進行していないことがわか
る。さらに、パーフルオロベンゼン誘導体とイオウ酸化
物の系でのプラズマ重合膜は、膜中に不飽和二重結合が
残存する。以上の点は、パーフルオロベンゼンのみのプ
ラズマ重合膜の場合、膜に、不飽和二重結合が残存せず
架橋反応が促進される点と比較すると実に驚くべきこと
である。The plasma polymerized film obtained as described above contains --SO in the film.
3 - of which it has an ionic functional group. This is, after ammonia (NH 3) were reacted in the generation layer, by measuring the infrared absorption spectrum, -SO 3 - NH 4 + ( 1120cm -1,
It can be confirmed by the presence or absence of vibration of 1400 cm -1 ). Further, it can be seen that the plasma-polymerized film of the present invention is soluble in an organic solvent having high polarity, and the crosslinking reaction does not proceed in the film. Furthermore, in the plasma polymerized film in the system of the perfluorobenzene derivative and the sulfur oxide, the unsaturated double bond remains in the film. The above points are truly surprising in comparison with the point that the unsaturated double bond does not remain in the film and the crosslinking reaction is promoted in the case of the plasma polymerized film containing only perfluorobenzene.
また、本発明のプラズマ重合膜は、表面硬度が高く、基
材との密着性も高い。さらに含フッ素化合物の特徴とさ
れる低表面エネルギー、低屈折率、耐熱性、耐候性、耐
薬品性、なども有している。以下、本発明を実施例によ
って説明するがこれらによって限定されるものではな
い。Further, the plasma polymerized film of the present invention has high surface hardness and high adhesion to the substrate. Further, it has low surface energy, low refractive index, heat resistance, weather resistance, chemical resistance, etc., which are features of the fluorine-containing compound. Hereinafter, the present invention will be described with reference to examples, but the invention is not limited thereto.
実施例1〜3 第1図に示す誘導無電極式放電型のプラズマ重合反応装
置を用いた。Examples 1 to 3 The induction electrodeless discharge type plasma polymerization reactor shown in FIG. 1 was used.
反応管1内を排気ポンプ6、7により排気して、1×10
-4Torr以下まで減圧した後アルゴンプラズマ(rf放電電
力25W)で10分間エッチングを行い系内の吸着水を除去
した。再び系内を1×10-4Torrまで減圧しニードルバル
ブ8で原料ガス流量を調整しながら総流量で4.0cm3(ST
P)/minになるように原料ガスを導入した。この際、高
周波発振器(日本高周波(株)製 SKN−05P);13.56MH
Zを用いて外部コイル3により100Wの放電エネルギーを
系内に導入しプラズマ重合反応を行った。The reaction tube 1 was evacuated by the exhaust pumps 6 and 7 to 1 × 10
After reducing the pressure to -4 Torr or less, etching was performed with argon plasma (rf discharge power 25 W) for 10 minutes to remove the adsorbed water in the system. The pressure inside the system was reduced to 1 × 10 -4 Torr again and the total flow rate was adjusted to 4.0 cm 3 (ST
The source gas was introduced so that P) / min. At this time, high-frequency oscillator (SKN-05P manufactured by Japan High-frequency Co., Ltd.); 13.56MH
Using Z, 100 W of discharge energy was introduced into the system by the external coil 3 to carry out plasma polymerization reaction.
原料ガスはパーフルオロベンゼンとSO2ガスを用い混合
組成がモル比で3/1(実施例1)、1/1(実施例2)、1/
3(実施例3)となるようにした。どの原料組成におい
てもガラス板2上に均一で黄色透明の膜が生成した。得
られた膜の膜厚、表面硬度、表面エネルギー、総イオン
交換容量を測定した。この結果を第1表に示す。なお膜
厚は針圧型の膜厚計により測定し、表面硬度は、JISK54
00に従い鉛筆硬度によって評価した。また、総イオン交
換容量は、KCl溶液中に10日間浸漬しpH変化より算出し
た。As a raw material gas, perfluorobenzene and SO 2 gas were used, and the mixture composition had a molar ratio of 3/1 (Example 1), 1/1 (Example 2), 1 /
3 (Example 3). A uniform, yellow transparent film was formed on the glass plate 2 regardless of the composition of the raw materials. The film thickness, surface hardness, surface energy, and total ion exchange capacity of the obtained film were measured. The results are shown in Table 1. The film thickness is measured with a stylus pressure type film thickness meter, and the surface hardness is JIS K54.
The pencil hardness was evaluated according to 00. Further, the total ion exchange capacity was calculated from the pH change by immersing in a KCl solution for 10 days.
実施例4 実施例1〜3によって生成したプラズマ重合膜をガラス
基材によりはがし取り、KBr錠剤法により赤外吸収スペ
クトルを日本分光製 FT/IR−3により測定した。結果
を第2図に示す。これによると、原料ガスの仕込比3/
1、1/1、1/3の三条件について生成物に大きな差はみら
れないことがわかる。 Example 4 The plasma-polymerized films produced in Examples 1 to 3 were peeled off from the glass substrate, and the infrared absorption spectrum was measured by FT / IR-3 manufactured by JASCO Corporation by the KBr tablet method. Results are shown in FIG. According to this, the raw material gas charge ratio is 3 /
It can be seen that there is no significant difference in the products under the three conditions of 1, 1/1 and 1/3.
また、1500cm-1にベンゼン環の吸収、1180cm-1にS=0
の伸縮の振動がそれぞれ確認される。Further, the absorption of the benzene ring to 1500 cm -1, S = 0 to 1180 cm -1
The expansion and contraction vibrations of are respectively confirmed.
[発明の効果] 本発明によれば、イオン官能基含有の含フッ素重合体薄
膜が容易に得られ、各種基材の表面を撥水・撥油性、潤
滑性等の物性に優れた面に改質することができ、物質透
過膜、電子材料、医用材料等として有用である。[Advantages of the Invention] According to the present invention, a fluorine-containing polymer thin film containing an ionic functional group can be easily obtained, and the surface of various substrates is improved to have excellent physical properties such as water / oil repellency and lubricity. Therefore, it is useful as a substance permeable film, an electronic material, a medical material and the like.
第1図は本発明を実施するためのプラズマ重合反応装置
の概略図、第2図は本発明により得られた薄膜の赤外吸
収スペクトルを示す。 1…反応管、2…基材 3…外部コイル、4,8…ニードルバルブ 5…冷却トラップ、6…拡散ポンプ 7…ロータリーポンプ、9…原料ガス 10…真空ゲージFIG. 1 is a schematic diagram of a plasma polymerization reactor for carrying out the present invention, and FIG. 2 shows an infrared absorption spectrum of a thin film obtained by the present invention. DESCRIPTION OF SYMBOLS 1 ... Reaction tube, 2 ... Base material 3 ... External coil, 4, 8 ... Needle valve 5 ... Cooling trap, 6 ... Diffusion pump 7 ... Rotary pump, 9 ... Raw material gas 10 ... Vacuum gauge
Claims (1)
ラズマ重合反応に供することにより基材上に形成され
た、分子中に−SO3−構造を有する重合体薄膜からなる
ことを特徴とするイオン交換性を有する物質透過膜。1. An ion comprising a polymer thin film having a —SO 3 — structure in a molecule formed on a substrate by subjecting a fluorine-containing organic compound and a sulfur compound to a plasma polymerization reaction. An exchangeable substance permeable membrane.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63063195A JPH0761434B2 (en) | 1988-03-18 | 1988-03-18 | Material permeable membrane |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63063195A JPH0761434B2 (en) | 1988-03-18 | 1988-03-18 | Material permeable membrane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01240666A JPH01240666A (en) | 1989-09-26 |
| JPH0761434B2 true JPH0761434B2 (en) | 1995-07-05 |
Family
ID=13222196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63063195A Expired - Lifetime JPH0761434B2 (en) | 1988-03-18 | 1988-03-18 | Material permeable membrane |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0761434B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5082347B2 (en) * | 2006-09-05 | 2012-11-28 | 旭硝子株式会社 | Separation membrane manufacturing method and separation membrane for water treatment |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6051505A (en) * | 1983-08-31 | 1985-03-23 | Toshiba Corp | Gas selective composite membrane |
| JPS61198619A (en) * | 1985-02-28 | 1986-09-03 | Canon Inc | Formation of deposited film |
| DE3509068A1 (en) * | 1985-03-14 | 1986-09-18 | Bayer Ag, 5090 Leverkusen | Pore membranes |
| JPS6223401A (en) * | 1985-07-22 | 1987-01-31 | Nok Corp | Ultrafiltration membrane |
| JPS62109965A (en) * | 1985-11-08 | 1987-05-21 | Japan Synthetic Rubber Co Ltd | Corrosion resistant article |
-
1988
- 1988-03-18 JP JP63063195A patent/JPH0761434B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01240666A (en) | 1989-09-26 |
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