JPH0552678B2 - - Google Patents
Info
- Publication number
- JPH0552678B2 JPH0552678B2 JP4365684A JP4365684A JPH0552678B2 JP H0552678 B2 JPH0552678 B2 JP H0552678B2 JP 4365684 A JP4365684 A JP 4365684A JP 4365684 A JP4365684 A JP 4365684A JP H0552678 B2 JPH0552678 B2 JP H0552678B2
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- semiconductor
- refractive index
- layer
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
＜技術分野＞
本発明の半導体レーザは安定な単一横モードで
発振する高出力半導体レーザに関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION <Technical Field> The semiconductor laser of the present invention relates to a high-power semiconductor laser that oscillates in a stable single transverse mode.
＜従来技術とその問題点＞
半導体レーザにおいて、安定な単一横モード発
振し、高出力であることは、光通信や光情報処理
用光源として重要である。現在、半導体レーザに
は埋め込み構造（BH構造と以下略す）と呼ばれ
る活性層が活性層より屈折率が小さな半導体層中
に埋め込まれた構造がよく採用されている。しか
し埋め込まれた活性層幅が2μｍ以上となると容
易に横高次モードが発振してしまう。また低注入
レベルで単一横モード発振しても高出力動作させ
るためにキヤリアを高注入すると単一横モード発
振が維持できないという問題があつた。<Prior art and its problems> In semiconductor lasers, stable single transverse mode oscillation and high output are important as light sources for optical communications and optical information processing. Currently, semiconductor lasers often employ a structure called a buried structure (hereinafter abbreviated as BH structure) in which an active layer is embedded in a semiconductor layer whose refractive index is smaller than that of the active layer. However, when the width of the buried active layer is 2 μm or more, transverse higher-order modes easily oscillate. Furthermore, even if single transverse mode oscillation occurs at a low injection level, there is a problem in that single transverse mode oscillation cannot be maintained if a high carrier is injected to achieve high output operation.
＜発明の目的＞
本発明の目的は上記の問題点を除き、安定な単
一横モードで発振する高出力な半導体レーザを提
供することにある。<Object of the Invention> An object of the present invention is to eliminate the above-mentioned problems and provide a high-output semiconductor laser that oscillates in a stable single transverse mode.
＜発明の構成＞
本発明の半導体レーザの構成は活性層より屈折
率が小さなメサストライプ状の第１の半導体層の
両側面を前記第１の半導体により屈折率が小さな
第２の半導体層によりはさみ込んだ構造を有する
メサを備え、かつ前記メサ上部とメサ下部でとぎ
れた活性層を含むダブルヘテロ構造を前記メサを
含む基板上に有することを特徴とする。<Structure of the Invention> The structure of the semiconductor laser of the present invention is such that both sides of a mesa stripe-shaped first semiconductor layer having a smaller refractive index than the active layer are sandwiched between second semiconductor layers having a smaller refractive index than the first semiconductor. The present invention is characterized in that a double heterostructure including a mesa having a deep structure and an active layer discontinuous at an upper part of the mesa and a lower part of the mesa is provided on a substrate including the mesa.
＜構成の詳細な説明及び作用効果＞
本発明の構成によれば、メサ上部の活性層は活
性層より屈折率が小さな半導体結晶内に埋め込ま
れているため、１つの光の導波路を形成する。さ
らにメサ上部の光の導波路を形成する活性層は、
その内部においてもメサを形成している半導体の
屈折率が中央で大きくなつているために等価的に
中央部の屈折率が高くなつている。この事よりメ
サ幅で決まる活性層幅を広くし光導波断面積を大
きくして高出力化をはかつたときにおいて単一横
モードを維持することができる。以下図面を用い
て詳細に説明する。第１図は本発明の半導体レー
ザの断面模式図と屈折率分布を示したものであ
る。メサ１００には活性層４より屈折率が高い第
１の半導体層３０が第１の半導体層３０より屈折
率が小さい第２半導体層２０によりはさみ込まれ
た構造を有している。メサ１００の上部と下部に
分離して活性層４を位置し、そのためメサ上部の
活性層４は周囲を活性層４より屈折率が小さな半
導体層で囲まれている。よつて１つの光導波路を
形成している。さらにメサ上部の活性層内部にお
いて中央部Ａと端部Ｂには等価的に屈折率差が形
成されている。Ａの部分の活性層の等価的な屈折
率はメサに含まれる第１の半導体層３０の屈折率
が第２の半導体層２０の屈折率より大きいためＢ
の部分の活性層の等価的な屈折率より大きくな
る。その屈折率の様子を第１図の上部に示した。
すなわち第１図のａ−a′の横方向の等価的な屈折
率分布である。中央部の屈折率と端部の屈折率差
は通常のBH構造と比較して小さく、光はW1の
幅の導波路で導波されると共に中央部Ａの屈折率
が等価的に高くなつているために、W1の幅を広
くしても単一横姿態が維持される。このため、
W1の幅を通常のBHの幅より広くし光の導波断
面積を大きくハイパワー化を計つても単一横姿態
が維持されるのである。<Detailed explanation of the structure and effects> According to the structure of the present invention, the active layer above the mesa is embedded in a semiconductor crystal having a refractive index smaller than that of the active layer, so that one optical waveguide is formed. . Furthermore, the active layer that forms the optical waveguide at the top of the mesa is
Inside the mesa, the refractive index of the semiconductor forming the mesa is higher at the center, so the refractive index at the center is equivalently higher. This makes it possible to maintain a single transverse mode when increasing the active layer width determined by the mesa width and increasing the optical waveguide cross section to achieve high output. This will be explained in detail below using the drawings. FIG. 1 shows a schematic cross-sectional view and refractive index distribution of the semiconductor laser of the present invention. The mesa 100 has a structure in which a first semiconductor layer 30 having a higher refractive index than the active layer 4 is sandwiched between second semiconductor layers 20 having a lower refractive index than the first semiconductor layer 30. The active layer 4 is placed separately in the upper and lower parts of the mesa 100, so that the active layer 4 in the upper part of the mesa is surrounded by a semiconductor layer having a smaller refractive index than the active layer 4. Thus, one optical waveguide is formed. Furthermore, an equivalent refractive index difference is formed between the center portion A and the end portions B inside the active layer in the upper part of the mesa. The equivalent refractive index of the active layer in the part A is B because the refractive index of the first semiconductor layer 30 included in the mesa is larger than the refractive index of the second semiconductor layer 20.
is larger than the equivalent refractive index of the active layer. The state of the refractive index is shown in the upper part of FIG.
That is, it is an equivalent refractive index distribution in the lateral direction along line aa' in FIG. The difference in refractive index between the central part and the ends is small compared to a normal BH structure, and as the light is guided through a waveguide with a width of W 1 , the refractive index of the central part A becomes equivalently higher. Therefore, even if the width of W 1 is increased, a single horizontal configuration is maintained. For this reason,
Even if the width of W 1 is made wider than that of a normal BH to increase the optical waveguide cross section and increase the power, the single lateral configuration can be maintained.
＜実施例＞
以下実施例を用いて説明する。本発明のレーザ
は次のようにして作製した。第２図は本発明の半
導体レーザの作製工程図であり、第２図ａに示す
ようにＰ形のGaAs基板１上に第１の半導体層３
０となるＰ形のAl0.2Ga0.8As層を1μｍを有機金属
分解法（以下MOCVD法と略す）により成長し、
第２図ｂに示すようにSiO2のストライプマスク
２００を形成した後に、MOCVD炉反応管内部
で気相エツチングし、その後に第２の半導体層２
０となるｎ型Al0.3Ga0.7As層を成長し、第２図ｃ
の形状を作製した。その後にSiO2を除去し、エ
ツチング処理をしたのち、液相エプタキシヤル成
長により第１のクラツド層３となるＰ形のAl0.2
Ga0.8As層を3μｍ、活性層４となるノンドープの
GaAs層0.1μｍ、第２のクラツド層５となるAl0.3
Ga0.8As層を2μｍ成長し、第２図ｄの本発明のレ
ーザ構造を作製した。実際はその上にGaAsキヤ
ツプ層を成長している。この際において液相エピ
タキシヤル成長ではメサ１００の上部に活性層を
分離成長させる事は容易に行なえる。第２の半導
体層２０は半導体基板１と導電性が異なるためメ
サの中央部以外にはＰ−ｎ−Pn構造が形成され、
活性層の発光領域のみに電流が注入される特徴を
有する。以上、本発明の半導体レーザは安定な単
一横モード発振する高出力な埋め込み構造半導体
レーザである。<Example> The following will be explained using examples. The laser of the present invention was manufactured as follows. FIG. 2 is a manufacturing process diagram of the semiconductor laser of the present invention. As shown in FIG. 2a, a first semiconductor layer 3 is formed on a P-type GaAs substrate 1.
A P-type Al 0.2 Ga 0.8 As layer with a thickness of 1 μm was grown by metal organic decomposition method (hereinafter abbreviated as MOCVD method),
After forming the SiO 2 stripe mask 200 as shown in FIG.
0, an n-type Al 0.3 Ga 0.7 As layer is grown, and
The shape was created. After that, SiO 2 is removed and etched, and then P-type Al 0.2 is grown to become the first cladding layer 3 by liquid phase epitaxial growth.
A non-doped Ga 0.8 As layer with a thickness of 3 μm is used as the active layer 4.
GaAs layer 0.1 μm, Al 0.3 which becomes second cladding layer 5
A Ga 0.8 As layer was grown to a thickness of 2 μm to produce the laser structure of the present invention shown in FIG. 2d. In reality, a GaAs cap layer is grown on top of it. In this case, the active layer can be easily grown separately on the upper part of the mesa 100 by liquid phase epitaxial growth. Since the second semiconductor layer 20 has a conductivity different from that of the semiconductor substrate 1, a P-n-Pn structure is formed in areas other than the center of the mesa.
It has the characteristic that current is injected only into the light emitting region of the active layer. As described above, the semiconductor laser of the present invention is a high-output buried structure semiconductor laser that oscillates in a stable single transverse mode.
第１図は、本発明の半導体レーザの断面模式図
と等価的な屈折率分布を示すものであり、第２図
ａ〜ｄは製作工程図である。図中１は半導体基板
３はクラツド層、４は活性層、５は埋め込み層、
３０は第１の半導体層、２０は第２の半導体層、
２００はSiO2ストライプである。
FIG. 1 shows a schematic cross-sectional view of the semiconductor laser of the present invention and an equivalent refractive index distribution, and FIGS. 2 a to 2 d are manufacturing process diagrams. In the figure, 1 indicates the semiconductor substrate 3 is a cladding layer, 4 indicates an active layer, 5 indicates a buried layer,
30 is a first semiconductor layer, 20 is a second semiconductor layer,
200 is a SiO 2 stripe.
Claims (1)
の第１の半導体の両側面を前記第１の半導体層よ
り屈折率が小さな第２の半導体層によりはさみ込
んだ構造を有するメサを備え、かつ前記メサ上部
とメサ下部でとぎれた活性層を含むダブルヘテロ
構造を前記メタを含む基板上に有することを特徴
とする埋め込み構造半導体レーザ。1. A mesa having a structure in which both sides of a mesa stripe-shaped first semiconductor having a refractive index lower than that of the active layer are sandwiched between second semiconductor layers having a lower refractive index than the first semiconductor layer, and A buried structure semiconductor laser comprising a double heterostructure including an active layer discontinuous at an upper part and a lower part of the mesa on a substrate including the mesa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4365684A JPS60187084A (en) | 1984-03-07 | 1984-03-07 | Buried structure semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4365684A JPS60187084A (en) | 1984-03-07 | 1984-03-07 | Buried structure semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60187084A JPS60187084A (en) | 1985-09-24 |
| JPH0552678B2 true JPH0552678B2 (en) | 1993-08-06 |
Family
ID=12669901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4365684A Granted JPS60187084A (en) | 1984-03-07 | 1984-03-07 | Buried structure semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60187084A (en) |
-
1984
- 1984-03-07 JP JP4365684A patent/JPS60187084A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60187084A (en) | 1985-09-24 |
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