JPH0566354B2 - - Google Patents
Info
- Publication number
- JPH0566354B2 JPH0566354B2 JP24716984A JP24716984A JPH0566354B2 JP H0566354 B2 JPH0566354 B2 JP H0566354B2 JP 24716984 A JP24716984 A JP 24716984A JP 24716984 A JP24716984 A JP 24716984A JP H0566354 B2 JPH0566354 B2 JP H0566354B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- molecular beam
- fluorescent
- growth apparatus
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は分子線結晶成長装置に関するものであ
り、この分子線結晶成長装置の薄膜形成について
は、その制御性が原子レベルの高精度であること
から、近年特に高移動度トランジスタ（HEMT）
などのヘテロ結合や超格子結晶などの成長に積極
的に利用されている。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a molecular beam crystal growth apparatus, and the controllability of thin film formation in this molecular beam crystal growth apparatus is at atomic level precision. Therefore, in recent years, especially high mobility transistors (HEMT)
It is actively used for the growth of heterojunctions and superlattice crystals such as.
通常、分子線結晶成長装置は原子レベルの結晶
成長を行うものであるから、この分子線結晶成長
装置の成長室内における真空度は1x10-10Torrの
高真空度に保持されており、成長室内には成長膜
面のパターンを観測するためと、膜厚を正確に制
御するために、少なくとも質量分析器と電子線回
折装置（Reflection High Energy Deffraction）
が設けられている。 Normally, molecular beam crystal growth equipment grows crystals at the atomic level, so the degree of vacuum in the growth chamber of this molecular beam crystal growth equipment is maintained at a high degree of vacuum of 1x10 -10 Torr. At least a mass spectrometer and an electron beam diffraction device (Reflection High Energy Defraction) are used to observe the pattern on the growing film surface and to accurately control the film thickness.
is provided.
質量分析装置は四重極の分析装置等が使用さ
れ、高真空度のバツクグランドの真空度に対し、
結晶成長を行うべき蒸着物質のガス状態の真空度
を測定して、その差から蒸着量を制御して形成さ
れる膜質や膜厚を制御するものであり、又電子線
回折装置は成長基板に高速電子を当て、その反射
電子を螢光面上に映像させて、結晶構造のパター
ンや膜厚を観察できるようにするものである。 The mass spectrometer uses a quadrupole analyzer, etc., and has a high degree of vacuum in the background.
It measures the degree of vacuum in the gaseous state of the vapor-deposited material to perform crystal growth, and controls the amount of vapor deposited based on the difference, thereby controlling the quality and thickness of the film formed. This method uses high-speed electrons and images the reflected electrons on a fluorescent surface, making it possible to observe the crystal structure pattern and film thickness.
然しながら、従来は分子線結晶成長装置内で結
晶成長がなされている際には、螢光面上に蒸着物
が飛来して蒸着付着し、それによつて螢光面の劣
化を来して短寿命になるため、通常結晶成長を行
う前後に、この成長膜面のパターンを観察するだ
けで、結晶成長中はこの螢光面を遮蔽して使用し
ないことになつている。 However, conventionally, when crystal growth is performed in a molecular beam crystal growth apparatus, vapor deposits fly and adhere to the fluorescent surface, which causes deterioration of the fluorescent surface and shortens its life. Therefore, it is customary to simply observe the pattern of the grown film surface before and after crystal growth, and to shield this fluorescent surface from use during crystal growth.
本発明は、分子線結晶成長装置の成膜過程が膜
厚や膜質の形成に重大な影響があることを考慮し
て、結晶成長中も電子線回折装置を使用できるよ
うにしたものである。 The present invention enables the use of an electron beam diffraction apparatus even during crystal growth, taking into consideration that the film formation process of a molecular beam crystal growth apparatus has a significant influence on the formation of film thickness and film quality.
第２図は従来の分子線結晶成長装置を説明する
ための模式断面図である。
FIG. 2 is a schematic cross-sectional view for explaining a conventional molecular beam crystal growth apparatus.
分子線結晶成長装置１の内部に配置された基板
２の表面に、例えばガリウム砒素（Ga As）結
晶を成長させる場合には、GaとAsとを別個に配
置された分子線源として坩堝３及び４があり、こ
れらの坩堝は抵抗加熱装置５によつて加熱され
て、蒸発した分子線は点線のように蒸発して基板
上に蒸着する。 When growing a gallium arsenide (Ga As) crystal, for example, on the surface of a substrate 2 placed inside the molecular beam crystal growth apparatus 1, a crucible 3 and a molecular beam source for Ga and As are separately placed. These crucibles are heated by a resistance heating device 5, and the evaporated molecular beams are evaporated as shown by the dotted line and deposited on the substrate.
又、分子線結晶成長装置１の内部には、反射線
高速電子線回折装置があり、成長している結晶パ
ターンを観察する装置であつて、電子ガン６と集
束レンズ７があり、偏光板８を通過して矢印のよ
うに基板２で反射した電子線は、螢光面９に結晶
パターンや周期的に変動する電子線を映像するも
のであつて、結晶の成長中に単原子層の厚み分が
成長する毎に、それに対応して周期的に電子線強
度の振動波形が観測できるために、それによつて
原子の成長状態や結晶のパターンを観察すること
が可能である。 Further, inside the molecular beam crystal growth apparatus 1, there is a reflected beam high-speed electron beam diffraction apparatus, which is a device for observing the growing crystal pattern, and includes an electron gun 6, a focusing lens 7, and a polarizing plate 8. The electron beam that passes through and is reflected by the substrate 2 as shown by the arrow images a crystal pattern and periodically fluctuating electron beams on the fluorescent surface 9, and the thickness of the monoatomic layer changes during crystal growth. As the electron beam intensity grows, the oscillation waveform of the electron beam intensity can be observed periodically, making it possible to observe the growth state of atoms and the pattern of crystals.
一方、分子線結晶成長装置では、成長膜の厚み
が原子又は分子レベルでの結晶成長であるため
に、これらの分子量の厚みを常時制御することが
必要であり、そのために四重質量分析によつて分
子線蒸着量を制御するために分子線測定装置１０
が配置されている。 On the other hand, in molecular beam crystal growth equipment, the thickness of the grown film is grown by crystal growth at the atomic or molecular level, so it is necessary to constantly control the thickness of these molecular weights, and for this purpose quadruple mass spectrometry is used. A molecular beam measuring device 10 is used to control the amount of molecular beam evaporated.
is located.
このような分子線結晶成長装置において、例え
ば−ｖ族のGaAsの半導体結晶層を成長させる
ような場合には、均一な元素比率を有する層に成
長させることは技術的な困難性があり、そのため
にも常時反射線高速電子回折による螢光の振動を
観察が必要であるが、実際には使用中に螢光板が
Asにより汚染され、そのために螢光面が劣化す
るという欠点がある。 For example, when growing a -v group GaAs semiconductor crystal layer using such a molecular beam crystal growth apparatus, it is technically difficult to grow a layer with a uniform element ratio. It is necessary to constantly observe the oscillation of the fluorescent light due to reflected line high-speed electron diffraction, but in reality, the fluorescent plate changes during use.
It has the disadvantage that it is contaminated with As, which deteriorates the fluorescent surface.
上記の構成の分子線結晶成長装置においては、
螢光面が蒸着物の被着汚染により、螢光面が劣化
するのが問題点であり、そのために反射線高速電
子線回折による螢光面のパターンを常時使用でき
ないという不具合を生ずる。
In the molecular beam crystal growth apparatus with the above configuration,
The problem is that the fluorescent surface deteriorates due to contamination of the fluorescent surface by deposition of deposits, and this results in the inconvenience that the pattern of the fluorescent surface obtained by reflection beam high-speed electron beam diffraction cannot always be used.
本発明は上記問題点を解消した分子線結晶成長
装置を提供するもので、その手段は、電子銃と螢
光面と膜厚測定器を具備してなる分子線結晶成長
装置において、該螢光面の前面にシヤツタとフア
ラデーカツプが設けられて、分子線結晶成長中に
成長膜面が観測されるようにしたことを特徴とす
る分子線結晶成長装置によつて達成できる。
The present invention provides a molecular beam crystal growth apparatus that solves the above-mentioned problems. This can be achieved by a molecular beam crystal growth apparatus characterized in that a shutter and a Faraday cup are provided in front of the surface so that the surface of the growing film can be observed during molecular beam crystal growth.
本発明は分子線結晶成長装置の中にある螢光面
が蒸着物によつて汚染されないように、螢光面の
前面にシヤツタを設けて必要な時期以外は使用し
ないが、回折電子線の膜面に当たつて反射される
電子線が、膜厚の単原子層の厚みが成長する周期
毎に、電子線に強弱がでるということを利用し
て、この電子線を受けるためのフアラデーカツプ
を設けて、分子線結晶成長膜面の成膜の状態を常
時観測できるように考慮したものである。
In order to prevent the fluorescent surface in the molecular beam crystal growth apparatus from being contaminated by deposits, a shutter is provided in front of the fluorescent surface and the shutter is not used except when necessary. Taking advantage of the fact that the strength of the electron beam that is reflected by the surface increases with each period in which the thickness of the monoatomic layer grows, a Faraday cup is provided to receive the electron beam. This method is designed to enable constant observation of the state of the film formed on the surface of the molecular beam crystal growth film.
第１図は本発明の実施例を示す分子線結晶成長
装置の模式側断面図である。
FIG. 1 is a schematic side sectional view of a molecular beam crystal growth apparatus showing an embodiment of the present invention.
分子線結晶成長装置１の内部に配置された基板
２の表面に分子線源として坩堝３及び４があり、
これらの坩堝は抵抗加熱装置５によつて加熱さ
れ、又反射線高速電子線回折装置があつて、電子
ガン６と集束レンズ７があり、矢印のように基板
２で反射した電子線は螢光面９に電子線を映像す
るものであり、１０は分子線測定装置である。 There are crucibles 3 and 4 as molecular beam sources on the surface of a substrate 2 arranged inside the molecular beam crystal growth apparatus 1,
These crucibles are heated by a resistance heating device 5, and are also equipped with a reflected beam high-speed electron beam diffraction device, an electron gun 6, and a focusing lens 7. As shown by the arrow, the electron beam reflected by the substrate 2 becomes fluorescent. It images an electron beam on a surface 9, and 10 is a molecular beam measuring device.
本発明によるシヤツタ１１とフアラデーカツプ
１２は、螢光面９の前面に設けられたものである
が、本発明の分子線結晶成長装置についての動作
について説明する。 The shutter 11 and Faraday cup 12 according to the present invention are provided in front of the fluorescent surface 9, and the operation of the molecular beam crystal growth apparatus according to the present invention will be explained.
分子線結晶成長装置での結晶成長は高真空中で
成長が行われ、純粋の材料が使用されることが重
要であるが、通常Ga、Asの化合物のごとき−
ｖ族の化合物半導体の成長では、ｖ族は10-5〜
10-6Torr程度の真空度であり、そのために成長
期間中に、常時高速電子反射線の回折パターンを
螢光板で観察していると、次第に螢光板上にAs
が被着して、螢光膜の輝度が低下し、遂に発光が
しなくなつてしまうことになる。 Crystal growth in a molecular beam crystal growth apparatus is performed in a high vacuum, and it is important to use pure materials, but usually materials such as Ga and As compounds are used.
In the growth of V group compound semiconductors, V group is 10 -5 ~
The degree of vacuum is approximately 10 -6 Torr, and therefore, when the diffraction pattern of high-speed electron reflection lines is constantly observed with a fluorescent plate during the growth period, As gradually appears on the fluorescent plate.
adheres to the fluorescent film, reducing the brightness of the fluorescent film and eventually ceasing to emit light.
従つて、成長中に反射線高速電子線回折パター
ンにより膜厚をモニタする場合は、最初の成長前
にシヤツタを開いて反射線高速電子線回折パター
ンを螢光面で観察し、鏡面反射や回折のスポツト
位置を検出する。 Therefore, when monitoring the film thickness using a reflected fast electron diffraction pattern during growth, open the shutter before the first growth and observe the reflected fast electron diffraction pattern on a fluorescent surface to detect specular reflection and diffraction. Detect the spot position.
そこでフアラデーカツプをスポツト位置に移動
し、螢光面の前面にあるシヤツタを閉じる。 Then, move the Faraday cup to the spot position and close the shutter in front of the fluorescent surface.
結晶成長中はフアラデーカツプにより高速電子
線回折線の反射線の周期的な信号強度を検出する
ことにより行われる。 During crystal growth, a Faraday cup is used to detect periodic signal intensities of reflected high-speed electron diffraction lines.
このような装置により、螢光面を劣化させるこ
となく、結晶成長中にフアラデーカツプにより電
子線回折強度を検出できるために、その強度変化
をモニタをすることにより、膜厚の管理をするこ
とが可能になる。 With this kind of equipment, the electron beam diffraction intensity can be detected using a Faraday cup during crystal growth without degrading the fluorescent surface, making it possible to control film thickness by monitoring changes in intensity. become.
以上詳細に説明したように本発明の分子線気相
成長装置は、結晶成長中も膜厚の状況を克明に観
測することが可能であり、高品質の結晶成長膜を
供し得るという効果大なるものがある。
As explained in detail above, the molecular beam vapor phase epitaxy apparatus of the present invention enables detailed observation of the film thickness even during crystal growth, and has the great effect of providing high-quality crystal grown films. There is something.
第１図は本発明の分子線結晶成長装置の模式断
面図、第２図は従来の分子線結晶成長装置の模式
断面図、
図において、１は分子線結晶成長装置、２は基
板、３，４は坩堝、５は抵抗加熱装置、６は電子
ガン、７は集束レンズ、８は偏向板、９は螢光
面、１０は分子線測定装置、１１はシヤツタ、１
２はフアラデーカツプである。
FIG. 1 is a schematic sectional view of a molecular beam crystal growth apparatus of the present invention, and FIG. 2 is a schematic sectional view of a conventional molecular beam crystal growth apparatus. In the figure, 1 is a molecular beam crystal growth apparatus, 2 is a substrate, 3, 4 is a crucible, 5 is a resistance heating device, 6 is an electron gun, 7 is a focusing lens, 8 is a deflection plate, 9 is a fluorescent surface, 10 is a molecular beam measuring device, 11 is a shutter, 1
2 is Faraday cup.
Claims (1)
成長装置において、該螢光面の前面にシヤツタと
フアラデーカツプが設けられてなることを特徴と
する分子線結晶成長装置。1. A molecular beam crystal growth apparatus comprising an electron gun and a fluorescent surface, characterized in that a shutter and a Faraday cup are provided in front of the fluorescent surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24716984A JPS61127695A (en) | 1984-11-22 | 1984-11-22 | Molecular beam crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24716984A JPS61127695A (en) | 1984-11-22 | 1984-11-22 | Molecular beam crystal growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61127695A JPS61127695A (en) | 1986-06-14 |
| JPH0566354B2 true JPH0566354B2 (en) | 1993-09-21 |
Family
ID=17159464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24716984A Granted JPS61127695A (en) | 1984-11-22 | 1984-11-22 | Molecular beam crystal growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61127695A (en) |
-
1984
- 1984-11-22 JP JP24716984A patent/JPS61127695A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61127695A (en) | 1986-06-14 |
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