JPH0567070B2 - - Google Patents
Info
- Publication number
- JPH0567070B2 JPH0567070B2 JP61245823A JP24582386A JPH0567070B2 JP H0567070 B2 JPH0567070 B2 JP H0567070B2 JP 61245823 A JP61245823 A JP 61245823A JP 24582386 A JP24582386 A JP 24582386A JP H0567070 B2 JPH0567070 B2 JP H0567070B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- semiconductor chip
- wiring
- board
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/141—One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/144—Stacked arrangements of planar printed circuit boards
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Combinations Of Printed Boards (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ひとつのパツケージ内に多数個の半
導体チツプを実装してなる、いわゆる三次元実装
マルチチツプパツケージ技術による半導体装置の
改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to improvement of a semiconductor device using so-called three-dimensional mounting multi-chip package technology, in which a large number of semiconductor chips are mounted in one package.
従来からこの種の半導体装置として、複数個の
半導体チツプ(LSIチツプ)を、複数枚の配線基
板にそれぞれ平面実装するとともに、これら配線
基板を順次積層方向に並設した状態で別の配線基
板上に設け、さらにこれらをひとつのパツケージ
内に実装してなる構成を有するものが知られてい
る。このような従来の三次元実装マルチチツプパ
ケージを第4図a,b,cを用いて簡単に説明す
ると、図中1はPN接合からなる能動素子および
その接続用配線を有し能動、受動機能を備えてな
るSi等による多数個の半導体チツプで、これら半
導体チツプ1はそれぞれがたとえば大容量メモ
リ、マイクロプロセツサの大規模論理回路等の一
定規模の機能を有し、かつこれら多数個の半導体
チツプ1全部でこの半導体装置全体の機能が構成
される。2はこれら多数個の半導体チツプ1が複
数個づつ配置固定されたその機能を相互に接続す
る複数枚の第1配線基板(搭載側配線基板)、3
はこれら第1配線基板が立設状態で並設されるこ
とでその機能を相互に接続する第2配線基板(接
続側配線基板)で、これら第1および第2配線基
板2,3は前記多数個の半導体チツプ1と共に截
然基板4上に載置されることでパツケージ化され
ている。ここで、図中5aは前記各半導体チツプ
1上に形成されこれを第1配線基板2側に電気
的、機械的に接続するためPb・Sn合金による電
極(以下バンプという)、5bは第1配線基板2
を第2配線基板側に電気的および機械的に接続す
るPb・Sn合金による電極(バンプ)で、また6
は第2配線基板3と絶縁基板4を電気的に接続す
るワイヤ、7はこの半導体装置の機能を外部に取
出すための外部接続用電極(外部ピン)である。
Conventionally, in this type of semiconductor device, a plurality of semiconductor chips (LSI chips) are planarly mounted on a plurality of wiring boards, and these wiring boards are sequentially arranged side by side in the stacking direction and mounted on another wiring board. It is known to have a configuration in which these components are provided in a single package. To briefly explain such a conventional three-dimensional multi-chip package using FIG. Each of these semiconductor chips 1 has a certain function, such as a large-capacity memory or a large-scale logic circuit of a microprocessor. All the chips 1 constitute the functions of the entire semiconductor device. 2 is a plurality of first wiring boards (mounting side wiring boards) for mutually connecting the functions of a plurality of these semiconductor chips 1 arranged and fixed; 3;
is a second wiring board (connection side wiring board) which interconnects the functions of these first wiring boards by arranging them side by side in an upright state; It is packaged by being clearly placed on a substrate 4 together with individual semiconductor chips 1. Here, in the figure, 5a is an electrode (hereinafter referred to as a bump) made of a Pb-Sn alloy formed on each semiconductor chip 1 to electrically and mechanically connect it to the first wiring board 2 side, and 5b is a first electrode. Wiring board 2
with an electrode (bump) made of a Pb/Sn alloy that electrically and mechanically connects the 6 to the second wiring board side.
7 is a wire for electrically connecting the second wiring board 3 and the insulating substrate 4, and 7 is an external connection electrode (external pin) for taking out the function of this semiconductor device to the outside.
このような構成による半導体装置において、半
導体チツプ1の主面に形成したPN接合はAl等に
よる配線(図示せず)で相互に接続され、PN接
合による電気的機能はその主面と同一平面上の任
意の位置から取出される構成とされている。した
がつて、この半導体チツプ1の主面を第1配線基
板2の主面(基板面)と平行して対抗配置すれ
ば、その間隙に配置されたバンプ5aをリフロー
ボンデイングすることで、この半導体チツプ1の
機能と第1配線基板2の配線を電気的に接続し、
同時にこの半導体チツプ1を第1配線基板2上に
固定することができるものである。そして、この
第1配線基板2の主面には半導体チツプ1を相互
に接続する配線、相互接続配線(図示せず)が予
め形成されているので、上述したようにして実装
された各半導体チツプ1の機能は互いに接続、複
合される。その結果、この第1配線基板2は、こ
のようにして搭載された複数個の半導体チツプ1
の個数分だけの機能(サブシステム)を構成する
ことになる。 In a semiconductor device with such a configuration, the PN junctions formed on the main surface of the semiconductor chip 1 are connected to each other by wiring (not shown) made of Al or the like, and the electrical functions of the PN junctions are performed on the same plane as the main surface. The structure is such that it can be taken out from any location. Therefore, if the main surface of this semiconductor chip 1 is placed parallel to and opposed to the main surface (substrate surface) of the first wiring board 2, this semiconductor chip can be bonded by reflow bonding the bumps 5a placed in the gap. electrically connecting the functions of the chip 1 and the wiring of the first wiring board 2;
At the same time, this semiconductor chip 1 can be fixed onto the first wiring board 2. Wiring for interconnecting the semiconductor chips 1 and interconnection wiring (not shown) are formed in advance on the main surface of the first wiring board 2, so that each semiconductor chip mounted as described above The functions of 1 are connected and combined with each other. As a result, this first wiring board 2 has a plurality of semiconductor chips 1 mounted in this way.
This means that as many functions (subsystems) as there are will be configured.
一方、このような複数個の半導体チツプ1を搭
載した第1配線基板2は、第2配線基板3の主面
(基板面)と接触する外周部の一辺に配置した電
極5bをリフローボンデイングすることで、第2
配線基板3の主面上に垂直な立設状態で配置さ
れ、これによりこの第1配線基板2を第2配設基
板3上に電気的に接続し、またこれと同時に機械
的にも固定している。そして、この第2配線基板
3の主面には、第1配線基板2を相互に接続する
配線、相互接続配線(図示せず)が予め形成され
ているため、これに搭載した前記第1配線基板2
上の個々の機能(サブシスム)は互いに接続、複
合されることとなる。したがつて、この第2配線
基板3上に、前記第1配線基板2のサブシステム
の全部すなわちこの半導体装置に収納した多数個
の半導体チツプ1のすべての個々の機能を搭載し
て複合してなる構成とし得るものである。 On the other hand, in the first wiring board 2 on which a plurality of such semiconductor chips 1 are mounted, the electrodes 5b arranged on one side of the outer periphery in contact with the main surface (substrate surface) of the second wiring board 3 are subjected to reflow bonding. So, the second
It is arranged vertically on the main surface of the wiring board 3, thereby electrically connecting the first wiring board 2 to the second installation board 3, and also mechanically fixing it at the same time. ing. Then, on the main surface of this second wiring board 3, wiring for interconnecting the first wiring boards 2 and interconnection wiring (not shown) are formed in advance, so that the first wiring mounted on this Board 2
The above individual functions (subsystems) will be connected and combined with each other. Therefore, on this second wiring board 3, all the subsystems of the first wiring board 2, that is, all the individual functions of the large number of semiconductor chips 1 housed in this semiconductor device are mounted and combined. This can be configured as follows.
また、この第2配線基板3を前記絶縁基板4に
接着剤(図示せず)で機械的に固定した後、第2
配線基板3上に形成した機能取出し用電極(図示
せず)と絶縁基板4上に形成した配線(図示せ
ず)とを、Au等によるワイヤ6で電気的に接続
することによつて、この第2配線基板3の全機能
が絶縁基板4側に継がる。そして、この絶縁基板
4上の配線は、この半導体装置の機能を外部に取
出す外部接続用電極(外部ピン)7に接続されて
いるため、結局半導体チツプ1、バンプ5a、第
1配線基板2、電極5b、第2配線基板3、ワイ
ヤ6、外部ピン7を通じて半導体装置の全機能が
完成し、外部に伝達することが可能となるもので
ある。 Further, after mechanically fixing this second wiring board 3 to the insulating board 4 with an adhesive (not shown), the second wiring board 3 is
This is achieved by electrically connecting the function extracting electrode (not shown) formed on the wiring board 3 and the wiring (not shown) formed on the insulating board 4 with a wire 6 made of Au or the like. All functions of the second wiring board 3 are continued to the insulating board 4 side. Since the wiring on this insulating substrate 4 is connected to an external connection electrode (external pin) 7 that extracts the function of this semiconductor device to the outside, the semiconductor chip 1, the bumps 5a, the first wiring board 2, All functions of the semiconductor device are completed through the electrode 5b, the second wiring board 3, the wire 6, and the external pin 7, and can be transmitted to the outside.
なお、前記絶縁基板4上には、半導体チツプ
1、第1配線基板2、第2配線基板3、ワイヤ6
等を物理的、化学的に保護する蓋体(図示せず)
が被冠して取付けられるので、通常の取扱いでは
この機能が損傷されることはなく、マルチチツプ
パツケージ化された半導体装置として動作される
ものであつた。 Incidentally, on the insulating substrate 4 are a semiconductor chip 1, a first wiring board 2, a second wiring board 3, and a wire 6.
A lid body (not shown) that physically and chemically protects the
Since the device was mounted with a cap on it, this function was not damaged during normal handling, and the device could be operated as a multi-chip packaged semiconductor device.
ところで、上述した従来装置によれば、第2配
線基板3の主面と接触する第1配線基板2外周の
一辺に設けた電極5bによつて第2配線基板3の
主面に第1配線基板2自身を固定すると同時に、
そのサブシステムを接続する構成とされているた
め、サブシステムの信号端子数は電極5bの数よ
りも少なくなければならないという制約がある。
しかし、その一方において、この電極数は、第2
配線基板3の主面と接触する第1配線基板2の一
辺の長さとバンプ間のピツチによつて決まる(電
極数=第1配線基板2の一辺の長さ÷バンプ間の
ピツチ)関係にあるので、信号端子数の多い半導
体チツプ1、たとえば大規模論理回路LSIチツプ
を第1配線基板2に搭載すると、そのサブシステ
ムの信号端子数が多くなり、機能接続に必要な電
極数が多くなつてしまうものであつた。そして、
このような多数の電極5bを第1配線基板2の一
辺に配列しようとすると、第1配線基板2の一辺
の長さを大きくするか、またはバンプ間ピツチを
小さくしなければならない。
By the way, according to the conventional device described above, the first wiring board is attached to the main surface of the second wiring board 3 by the electrode 5b provided on one side of the outer periphery of the first wiring board 2 in contact with the main surface of the second wiring board 3. 2 At the same time fixing itself,
Since the configuration is such that the subsystems are connected, there is a restriction that the number of signal terminals of the subsystem must be smaller than the number of electrodes 5b.
However, on the other hand, this number of electrodes is
The relationship is determined by the length of one side of the first wiring board 2 that contacts the main surface of the wiring board 3 and the pitch between the bumps (number of electrodes = length of one side of the first wiring board 2 ÷ pitch between the bumps). Therefore, if a semiconductor chip 1 with a large number of signal terminals, such as a large-scale logic circuit LSI chip, is mounted on the first wiring board 2, the number of signal terminals of the subsystem will increase, and the number of electrodes required for functional connection will increase. It was something to put away. and,
In order to arrange such a large number of electrodes 5b on one side of the first wiring board 2, the length of one side of the first wiring board 2 must be increased or the pitch between bumps must be decreased.
しかしながら、上述した第1配線基板2の一辺
を大きくすると、パツケージ外形が大きくなり、
その体積当りの搭載半導体チツプ数が減少し、実
装密度が低下してしまうものである。また、バン
プ間ピツチを小さくしようとすると、微細バンプ
形成技術が要求されてプロセス上の困難性を増大
させる結果を招いてしまうものである。すなわ
ち、大規模論理回路LSIチツプのような信号端子
数の多い半導体チツプ1を三次元実装マルチチツ
プモジユールに組立てようとすると、モジユール
の半導体チツプ実装密度を低下させるか、プロセ
ス上の困難性を増大させなければならないという
欠点をもつものであつた。 However, if one side of the first wiring board 2 described above is made larger, the outer shape of the package becomes larger.
The number of semiconductor chips mounted per volume decreases, and the packaging density decreases. Furthermore, when attempting to reduce the pitch between bumps, a technique for forming fine bumps is required, resulting in increased process difficulties. In other words, when attempting to assemble a semiconductor chip 1 with a large number of signal terminals, such as a large-scale logic circuit LSI chip, into a three-dimensionally mounted multi-chip module, the semiconductor chip mounting density of the module may be reduced or the process difficulty may be increased. It had the disadvantage that it had to be increased.
本発明は上述した事情に鑑みてなされたもの
で、信号端子数の多い大規模論理回路のような半
導体チツプを搭載するにあたつて、三次元実装マ
ルチチツプモジユールの半導体チツプ実装密度が
低下せず、またプロセス上の困難性も増大するこ
とのない半導体装置を得ることを目的としてい
る。 The present invention was made in view of the above-mentioned circumstances, and when mounting a semiconductor chip such as a large-scale logic circuit with a large number of signal terminals, the semiconductor chip mounting density of a three-dimensionally mounted multi-chip module decreases. It is an object of the present invention to obtain a semiconductor device that does not require any increase in process difficulty.
本発明に係る半導体装置は、外部接続用電極を
有する絶縁基板と、この絶縁基板に設けられかつ
半導体チツプが搭載されている接続側配線基板
と、半導体チツプが搭載されかつ接続側配線基板
に搭載されている半導体チツプに当たらないよう
に切欠き部が形成されるとともに接続側配線基板
に対し垂直に配設された搭載側配置基板とを備え
てなる構成としたものである。
A semiconductor device according to the present invention includes an insulating substrate having an electrode for external connection, a connection-side wiring board provided on the insulating substrate and having a semiconductor chip mounted thereon, and a connection-side wiring board on which the semiconductor chip is mounted and mounted on the connection-side wiring board. The mounting side arrangement board is provided with a notch formed so as not to hit the semiconductor chip mounted thereon, and is disposed perpendicularly to the connection side wiring board.
本発明によれば、一つのパツケージ内に複数個
の半導体チツプを実装するにあたつて、これら複
数個の半導体チツプを搭載側配線基板だけでな
く、接続側配線基板の基板面上にも実装するもの
であり、特にこの接続配線基板上に信号端子数の
多い半導体チツプを実装することにより、搭載側
配線基板と接続側配線基板間を接続する電極数の
制約を受ける等の問題を一掃し、一つのパツケー
ジ内での半導体チツプの効率のよい実装を可能と
し得るものである。
According to the present invention, when mounting a plurality of semiconductor chips in one package, these semiconductor chips are mounted not only on the mounting side wiring board but also on the board surface of the connection side wiring board. In particular, by mounting a semiconductor chip with a large number of signal terminals on this connection wiring board, problems such as restrictions on the number of electrodes that connect between the mounting side wiring board and the connection side wiring board can be eliminated. , it is possible to efficiently package semiconductor chips within one package.
以下、本発明を図面に示した実施例を用いて詳
細に説明する。
Hereinafter, the present invention will be explained in detail using embodiments shown in the drawings.
第1図a,b,cは本発明に係る半導体装置の
一実施例を示すものであり、これらの図において
前述した第4図a,b,cと同一または相当する
部分には同一番号を付してその説明は省略する。 Figures 1a, b, and c show one embodiment of a semiconductor device according to the present invention, and in these figures, the same or corresponding parts as in Figures 4a, b, and c described above are designated by the same numbers. The explanation will be omitted.
さて、本発明によれば、複数個の半導体チツプ
1を一つのパツケージ内に実装することにより三
次元実装マルチパツケージ技術による半導体装置
を構成するにあたつて、能動、受動機能を備えて
いる複数個の半導体チツプ1と、これら複数個の
半導体チツプ1を基板面上に実装してなる複数枚
の第1配線基板(搭載側配線基板)2と、これら
第1配線基板2を立設状態で積層方向に並設する
基板面を有し第1配線基板2に対し垂直に配置さ
れた第2配線基板(接続側配線基板)3と、この
第2配線基板3が搭載して固定された外部接続用
電極7を有する絶縁基板4とを備え、前記第2配
線基板3の基板面上に、前記半導体チツプ1のう
ち複数個を、その主面が平行するようにして実装
するとともに、この第2配線基板3に実装した半
導体チツプ1に当たらないように切欠き部分10
を、前記第1配線基板2に形成するようにし、か
つこれら半導体チツプ1、第1配線基板2、第2
配線基板3、絶縁基板4を含めた全体をパツケー
ジ化することにより構成したところを特徴として
いる。 Now, according to the present invention, when configuring a semiconductor device using three-dimensional mounting multi-package technology by mounting a plurality of semiconductor chips 1 in one package, a plurality of semiconductor chips 1 having active and passive functions can be assembled. a plurality of semiconductor chips 1, a plurality of first wiring boards (mounting side wiring boards) 2 formed by mounting these plurality of semiconductor chips 1 on a board surface, and these first wiring boards 2 in an upright state. A second wiring board (connection side wiring board) 3 having board surfaces arranged in parallel in the stacking direction and arranged perpendicularly to the first wiring board 2, and an external circuit board on which this second wiring board 3 is mounted and fixed. A plurality of the semiconductor chips 1 are mounted on the substrate surface of the second wiring board 3 so that their main surfaces are parallel to each other. 2. Cutout portion 10 is cut out so as not to hit semiconductor chip 1 mounted on wiring board 3.
are formed on the first wiring board 2, and these semiconductor chips 1, the first wiring board 2, the second
The device is characterized in that the entire structure including the wiring board 3 and the insulating board 4 is packaged.
すなわち、本発明によれば、前記第2配線基板
3の基板面(主面)側にも、前記半導体チツプ1
を搭載して接続し得る配線、相互接続配線(図示
せず)を形成しており、これに信号端子数の多い
半導体チツプ1を搭載するような構成としてい
る。特に、本実施例では、この第2配線基板3上
に配置される半導体チツプ1が、第1配線基板2
側に形成した切欠き部分10に位置するような構
成としている。なお、この切欠き部分10の高さ
方向の寸法は、半導体チツプ1の厚みとバンプ5
aの高さ、半導体チツプ1背面の切欠き部分10
までの間隔の総和に等しいように設定されてい
る。この場合、半導体チツプ1の厚みとバンプ5
aの高さ(たとえば0.5mm)は半導体チツプ1の
主面寸法(たとえば5mm、10mm角)の約1/10〜1/
20と小さい。また、切欠き部分10をもつた第1
配線基板2は写真製版法とエツチング法を用いて
形成するため、その加工精度(たとえば±0.05
mm)は優れている。そして、この高さ方向の寸法
(たとえば0.6mm)は、第1配線基板2の縦方向の
寸法(たとえば15mm、25mm)の約1/20〜1/40を占
めるに過ぎず、このような部分に従来配置し得な
かつた半導体チツプ1を統載できることから、半
導体チツプ1を第2配線基板3側にきわめて簡単
にしかも効率よく搭載できることとなり、この半
導体装置全体の半導体チツプ1数が低下するとい
つた問題を一掃し得るものである。 That is, according to the present invention, the semiconductor chip 1 is also provided on the substrate surface (principal surface) side of the second wiring board 3.
Wiring and interconnection wiring (not shown) that can be mounted and connected are formed, and the semiconductor chip 1 having a large number of signal terminals is mounted on this. In particular, in this embodiment, the semiconductor chip 1 disposed on the second wiring board 3 is connected to the first wiring board 2.
It is configured such that it is located in a notch 10 formed on the side. Note that the dimension of the notch portion 10 in the height direction depends on the thickness of the semiconductor chip 1 and the bump 5.
Height of a, cutout portion 10 on the back side of semiconductor chip 1
is set equal to the sum of the intervals up to. In this case, the thickness of the semiconductor chip 1 and the bump 5
The height of a (for example, 0.5 mm) is about 1/10 to 1/1 of the main surface dimensions of the semiconductor chip 1 (for example, 5 mm, 10 mm square).
It's small at 20. Further, a first portion having a notch portion 10
Since the wiring board 2 is formed using photolithography and etching, the processing accuracy (for example, ±0.05
mm) is excellent. This height dimension (for example, 0.6 mm) only occupies about 1/20 to 1/40 of the vertical dimension (for example, 15 mm, 25 mm) of the first wiring board 2, and such a portion Since the semiconductor chip 1, which could not be placed conventionally, can be mounted on the second wiring board 3 side, the semiconductor chip 1 can be mounted very easily and efficiently on the second wiring board 3 side. It is possible to wipe out the problems that have arisen.
これを詳述すると、第2配線基板3は、複数枚
の第1配線基板2や半導体チツプ1の個々の機
能、サブシステムを複合するためのものであり、
またその複合した全機能はその基板面の四辺から
取出され、前記絶縁基板4側の外部接続用端子7
を介して外部に接続されている。そして、上述し
たサブシステムを複合するにあたつて第2配線基
板3の基板面(二次元平面)全体を用いるので、
その主面のいたるところに配線、さらには端子、
電極等を自由に形成できるものである。したがつ
て、大規模論理回路LSIチツプのような信号端子
数の大い半導体チツプ1を第2配線基板3の基板
面に配置、固定することはきわめて容易に行なえ
るもので、しかも従来のように第1配線基板2を
介さずに直接第2配線基板3に配設するので、第
1配線基板2と第2配線基盤3間を接続する電極
数の制約を受けることもなく、その結果信号端子
数の多いLSIチツプを三次元実装マルチチツプモ
ジユールにきわめて容易に搭載し得るものであ
る。 To explain this in detail, the second wiring board 3 is for combining the individual functions and subsystems of a plurality of first wiring boards 2 and semiconductor chips 1,
In addition, all the combined functions are taken out from the four sides of the board surface, and external connection terminals 7 on the insulating board 4 side
connected to the outside world via. Since the entire board surface (two-dimensional plane) of the second wiring board 3 is used to combine the above-mentioned subsystems,
Wiring and even terminals are everywhere on its main surface.
Electrodes etc. can be formed freely. Therefore, it is extremely easy to arrange and fix a semiconductor chip 1 having a large number of signal terminals, such as a large-scale logic circuit LSI chip, on the substrate surface of the second wiring board 3, and moreover, it is possible to arrange and fix the semiconductor chip 1 having a large number of signal terminals, such as a large-scale logic circuit LSI chip, on the substrate surface of the second wiring board 3. Since it is directly arranged on the second wiring board 3 without going through the first wiring board 2, there is no restriction on the number of electrodes connected between the first wiring board 2 and the second wiring board 3, and as a result, the signal This allows an LSI chip with a large number of terminals to be extremely easily mounted on a three-dimensionally mounted multi-chip module.
第2図a,b,cは本発明の別の実施例を示す
ものであつて、この実施例では、上述した第1配
線基板2を、二つの部分2A,2Bから構成した
場合を示しており、それ以外は上述した実施例と
同等で、またこれによる作用効果も容易に理解さ
れよう。なお、この場合における第1配線基板2
は、一方の第1配線基板2A上に半導体チツプ1
を実装する場合と同じ工程、方法で他方の第1配
線基板2Bを配線することで簡単に得られるもの
である。 FIGS. 2a, b, and c show another embodiment of the present invention, and in this embodiment, the first wiring board 2 described above is constructed from two parts 2A and 2B. Other than that, this embodiment is the same as the embodiment described above, and the effects thereof will be easily understood. Note that the first wiring board 2 in this case
A semiconductor chip 1 is placed on one first wiring board 2A.
This can be easily obtained by wiring the other first wiring board 2B using the same process and method as for mounting.
さらに、本発明は上述した実施例構造に限定さ
れず、各部の形状、構造等を、適宜変形、変更す
ることは自由である。たとえば第2配線基板3上
での半導体チツプ1の配線位置は自由に設定すれ
ばよいものであり、またこれら半導体チツプ1と
第1配線基板2、第2配線基板3との固定、接続
方法は、バンプ5a,5bによるフエイスダウン
方法に限定されるものではなく、第3図に示され
るようなフエイスアツプ方式にしてワイヤ6で接
続するようにしてもよいことは勿論である。 Further, the present invention is not limited to the structure of the embodiment described above, and the shape, structure, etc. of each part may be modified or changed as appropriate. For example, the wiring position of the semiconductor chip 1 on the second wiring board 3 can be set freely, and the method of fixing and connecting these semiconductor chips 1 to the first wiring board 2 and the second wiring board 3 can be set as desired. However, the present invention is not limited to the face-down method using the bumps 5a and 5b, and it goes without saying that the face-up method shown in FIG. 3 may be used for connection using the wire 6.
さらに、上述した実施例では、絶縁基板4上に
一枚の第2配線基板3を搭載した場合を説明した
が、この絶縁基板4上に複数枚の第2敗戦基板3
を搭載してもよいことは勿論である。 Further, in the above-described embodiment, a case was explained in which one second wiring board 3 was mounted on the insulating board 4, but a plurality of second losing boards 3 were mounted on the insulating board 4.
Of course, it is also possible to mount the .
また、上述した実施例では、半導体チツプ1
を、論理回路LSIチツプとして説明したが、メモ
リ、センサ等の他の機能をもつものであつてもよ
く、またLSIに限らず、MSI、SSIであつてもよ
いことも容易に理解されよう。さらに、半導体チ
ツプ1に能動素子がなく、配線、抵抗、容量等の
受動素子だけが形成されているものでもよく、ま
た半導体チツプ1、第1配線基板2、第2配線基
板3以外にコイル、コンデンサ等の受動素子を搭
載するようにしてもよい。 Furthermore, in the embodiment described above, the semiconductor chip 1
has been described as a logic circuit LSI chip, but it will be easily understood that it may have other functions such as memory and sensor, and it is not limited to LSI but may also be MSI or SSI. Furthermore, the semiconductor chip 1 may have no active elements and only passive elements such as wiring, resistance, and capacitance are formed, and in addition to the semiconductor chip 1, the first wiring board 2, and the second wiring board 3, there may be coils, Passive elements such as capacitors may be mounted.
以上説明したように本発明によれば、複数個の
半導体チツプを一つのパツケージ内に実装するこ
とにより三次元実装マルチパツケージ技術による
半導体装置を構成するにあたつて、外部接続用電
極を有する絶縁基板と、この絶縁基板に設けられ
かつ半導体チツプが搭載されている接続側配線基
板と、半導体チツプが搭載されかつ接続側配線基
板に搭載されている半導体チツプに当たらないよ
うに切欠き部が形成されるとともに接続側配線基
板に対し垂直に配設された搭載側配線基板とを備
え、これら半導体チツプ、搭載側配線基板、接続
側配線基板、絶縁基板を含めた全体をパツケージ
化するように構成したので、簡単かつ安価な構成
にもかかわらず、以下に述べたような種々優れた
効果を奏する。
As explained above, according to the present invention, when configuring a semiconductor device using three-dimensional mounting multi-package technology by mounting a plurality of semiconductor chips in one package, an insulator having external connection electrodes is used. A substrate, a connection-side wiring board provided on the insulating substrate and on which a semiconductor chip is mounted, and a notch formed so as not to hit the semiconductor chip on which the semiconductor chip is mounted and mounted on the connection-side wiring board. and a mounting-side wiring board disposed perpendicularly to the connection-side wiring board, and is configured so that the entire package including the semiconductor chip, the mounting-side wiring board, the connection-side wiring board, and the insulating board is packaged. Therefore, despite the simple and inexpensive configuration, various excellent effects as described below can be achieved.
すなわち、本発明によれば、搭載側配線基板と
接続側配線基板との接続電極数の制約を受けるこ
となく、信号端子数の多い半導体チツプを三次元
マルチチツプモジユールにきわめて容易に搭載し
得るという効果を奏する。 That is, according to the present invention, a semiconductor chip having a large number of signal terminals can be extremely easily mounted on a three-dimensional multi-chip module without being subject to restrictions on the number of connection electrodes between the mounting-side wiring board and the connection-side wiring board. This effect is achieved.
そして、このような本発明によれば、信号端子
数の多い大規模論理回路のようなLSIチツプを実
装密度を低下させずに、またプロセス上の困難性
も増大させずに、三次元マルチチツプモジユール
として簡単かつ適切に組立てることができ、これ
らをパツケージ化することにより、一つのパツケ
ージ内に高密度に実装することができるという利
点を奏する。 According to the present invention, an LSI chip such as a large-scale logic circuit with a large number of signal terminals can be integrated into a three-dimensional multichip without reducing the packaging density or increasing the difficulty of the process. It has the advantage that it can be easily and appropriately assembled as a module, and by packaging these components, it can be mounted in a single package with high density.
第1図a,b,cは本発明に係る半導体装置の
一実施例を示す概略斜視図およびその側面図、第
2図a,b,cは本発明の別の実施例を示す概略
斜視図およびその側面図、第3図は本発明の他の
実施例を示す側面図、第4図a,b,cは従来例
を示す概略斜視図、側面図およびそのA部詳細図
である。
1……半導体チツプ、2……第1配線基板、3
……第2配線基板、4……絶縁基板、5a……バ
ンプ、5b……電極(バンプ)、6……ワイヤ、
7……外部接続用電極、10……切欠き部分。
Figures 1a, b, and c are schematic perspective views and side views showing one embodiment of a semiconductor device according to the present invention, and Figures 2a, b, and c are schematic perspective views showing another embodiment of the present invention. 3 is a side view showing another embodiment of the present invention, and FIGS. 4a, b, and c are a schematic perspective view, a side view, and a detailed view of part A thereof showing a conventional example. 1... Semiconductor chip, 2... First wiring board, 3
...Second wiring board, 4...Insulating substrate, 5a...Bump, 5b...Electrode (bump), 6...Wire,
7... Electrode for external connection, 10... Notch part.
Claims (1)
載された接続側配線基板と、 半導体チツプが搭載されかつ前記接続側配線基
板に搭載された半導体チツプに当たらないように
切欠き部が形成されるとともに前記接続側配線基
板に対し垂直に配設された搭載側配線基板とを備
えていることを特徴とする半導体装置。[Scope of Claims] 1. An insulating substrate having external connection electrodes, a connection-side wiring board provided on the insulating substrate and having a semiconductor chip mounted thereon, and a semiconductor chip mounted on the connection-side wiring board and mounted on the connection-side wiring board. What is claimed is: 1. A semiconductor device comprising: a mounting side wiring board, the mounting side wiring board having a notch formed therein so as not to hit the semiconductor chip and being disposed perpendicularly to the connection side wiring board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61245823A JPS6399559A (en) | 1986-10-15 | 1986-10-15 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61245823A JPS6399559A (en) | 1986-10-15 | 1986-10-15 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6399559A JPS6399559A (en) | 1988-04-30 |
| JPH0567070B2 true JPH0567070B2 (en) | 1993-09-24 |
Family
ID=17139384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61245823A Granted JPS6399559A (en) | 1986-10-15 | 1986-10-15 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6399559A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0629459A (en) * | 1992-07-08 | 1994-02-04 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
| JP3036976B2 (en) * | 1992-07-24 | 2000-04-24 | 日本電気株式会社 | Multi-chip module |
| JP3057130B2 (en) | 1993-02-18 | 2000-06-26 | 三菱電機株式会社 | Resin-sealed semiconductor package and method of manufacturing the same |
| US5362986A (en) * | 1993-08-19 | 1994-11-08 | International Business Machines Corporation | Vertical chip mount memory package with packaging substrate and memory chip pairs |
| KR100587024B1 (en) * | 1998-12-24 | 2007-12-12 | 주식회사 하이닉스반도체 | 3-D Stacked Micro Visual Package |
| JP7007012B2 (en) * | 2017-09-12 | 2022-01-24 | Necプラットフォームズ株式会社 | Electronic equipment, module board |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5713999Y2 (en) * | 1977-05-24 | 1982-03-20 |
-
1986
- 1986-10-15 JP JP61245823A patent/JPS6399559A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6399559A (en) | 1988-04-30 |
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