JPH0569300B2 - - Google Patents
Info
- Publication number
- JPH0569300B2 JPH0569300B2 JP6087186A JP6087186A JPH0569300B2 JP H0569300 B2 JPH0569300 B2 JP H0569300B2 JP 6087186 A JP6087186 A JP 6087186A JP 6087186 A JP6087186 A JP 6087186A JP H0569300 B2 JPH0569300 B2 JP H0569300B2
- Authority
- JP
- Japan
- Prior art keywords
- scanning
- foreign matter
- optical path
- matter inspection
- reticle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Description
【発明の詳細な説明】
[発明の分野]
本発明は、半導体製造工程で用いられるフオト
マスクまたはレチクルの表面に付着した塵埃等の
異物を走査ビームの照射により検出する異物検査
装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to a foreign matter inspection device that detects foreign matter such as dust attached to the surface of a photomask or reticle used in a semiconductor manufacturing process by irradiating a scanning beam.
なお、本明細書において「レチクル」は「フオ
トマスク」を含むものとし、またレチクルを例に
した説明はフオトマスクに対しても同様に適用可
能である。 Note that in this specification, a "reticle" includes a "photomask," and the explanation using a reticle as an example can be similarly applied to a photomask.
[発明の背景]
一般にIC製造工程においては、レチクルの露
光用パターンを半導体焼付け装置(ステツパまた
はマスクアライナ)の投影光学系等によりレジス
トが塗布された半導体ウエハ上に転写するという
方法が採用されている。[Background of the Invention] Generally, in the IC manufacturing process, a method is adopted in which the exposure pattern of a reticle is transferred onto a semiconductor wafer coated with resist using a projection optical system of a semiconductor printing device (stepper or mask aligner). There is.
ここで半導体焼付け装置によりレチクルからレ
ジストを塗つてあるウエハ上にパターンを転写す
る時、ゴミ等の欠陥がレチクル表面に付着してい
ると本来のレチクルのパターン以外に欠陥の形も
焼き付けることとなりIC製造の歩留り低下の原
因となる。 When a pattern is transferred from a reticle to a wafer coated with resist using semiconductor printing equipment, if defects such as dust adhere to the reticle surface, the shape of the defect will be printed in addition to the original reticle pattern, resulting in the IC being printed. This causes a decrease in manufacturing yield.
特にウエハに所望のレチクルパターンをステツ
プアンドリピートで複数焼きつける「ステツパ」
を用いる場合、レチクル上の1ケのゴミがウエハ
全面に焼付けられることとなる。 In particular, "steppers" print multiple desired reticle patterns onto wafers using step-and-repeat techniques.
When using this method, one piece of dust on the reticle will be printed onto the entire surface of the wafer.
そこで近年、レチクル上のゴミを的確に検出す
ることが不可欠なこととなつた。さらに歩留り向
上のため検査時間の短縮化が要求されている。 Therefore, in recent years, it has become essential to accurately detect dust on a reticle. Furthermore, shortening of inspection time is required to improve yield.
[従来の技術]
このようなレチクル上のゴミ等の異物を検出す
るための従来の異物検査装置の構成を第7図に示
す。レーザ光源(図示しない)からのレーザビー
ム3は回転ミラー等からなる走査光源系2を介し
てレチクル1を所定の走査線に沿つて照射する。
レチクル1の上面(パターン裏面)1aを検査す
る場合には、ミラー14,15により走査ビーム
3を反射させてレチクル上面1aを照射する。走
査ビーム3の反射散乱光は集光レンズ6aを介し
て光検知器17aで検知され、異物があれば検出
される。レチクル1の下面(パターン形成面)1
bを検査する場合には、ミラー14の位置を切換
えて走査ビーム3の光路から外し、走査光学系2
からの走査ビーム3によりミラー18を介してレ
チクル下面1bを照射する。6bは集光レンズ、
17bは光検知器である。[Prior Art] FIG. 7 shows the configuration of a conventional foreign matter inspection device for detecting foreign matter such as dust on a reticle. A laser beam 3 from a laser light source (not shown) irradiates the reticle 1 along a predetermined scanning line via a scanning light source system 2 consisting of a rotating mirror or the like.
When inspecting the top surface (pattern back surface) 1a of the reticle 1, the scanning beam 3 is reflected by mirrors 14 and 15 to irradiate the top surface 1a of the reticle. The reflected and scattered light of the scanning beam 3 is detected by a photodetector 17a via a condensing lens 6a, and any foreign matter is detected. Lower surface of reticle 1 (pattern forming surface) 1
When inspecting b, the position of the mirror 14 is changed to remove it from the optical path of the scanning beam 3, and the scanning optical system 2
The lower surface 1b of the reticle is irradiated with the scanning beam 3 through the mirror 18. 6b is a condensing lens,
17b is a photodetector.
[従来技術の問題点]
このような従来の異物検査装置では、レチクル
のパターン形成面1bと裏面1aとを検査するの
にミラー14を切換えて各面を別々に検査しなけ
ればならず、検査時間を多く要していた。[Problems with the prior art] In such a conventional foreign matter inspection device, in order to inspect the pattern forming surface 1b and the back surface 1a of the reticle, the mirror 14 must be switched and each surface must be inspected separately. It took a lot of time.
[発明の目的]
本発明は前記従来技術の欠点に鑑みなされたも
のであつて、簡単な構造で検査時間の短縮を図
り、信頼性の高い検出結果が得られる異物検査装
置の提供を目的とする。[Object of the Invention] The present invention has been made in view of the drawbacks of the prior art described above, and an object of the present invention is to provide a foreign object inspection device that has a simple structure, shortens inspection time, and can obtain highly reliable detection results. do.
[実施例]
以下、本発明を図に示した実施例に基づいて説
明する。第1図において、レチクル1はパターン
裏面1aを上面にパターン形成面1bを下面にし
て図示しない支持装置(レチクルステージ)に保
持されている。レチクル1の上面側には、パター
ン裏面照射用ミラー5およびパターン裏面検知用
受光系30が設置される。受光系30は、集光レ
ンズ6a、絞り7a、光フアイバ8aおよびホト
マル(光電子増倍管)または半導体受光素子等の
光センサ9aにより構成されている。同様にレチ
クル1の下面側には、パターン形成面照射用ミラ
ー10およびパターン形成面検知用受光系31が
配設される。受光系31は、受光系30と同様に
集光レンズ6b、絞り7b、光フアイバ8bおよ
び光センサ9bにより構成されている。2は走査
光学系であり、回転ミラー(図示しない)等によ
り構成されている。レーザ光源(図示しない)か
らのレーザビームはこの走査光学系2を介して走
査ビーム3としてレチクル走査面上を図面に垂直
方向に走査する。走査光学系2からの走査ビーム
3の光路上にはハーフミラー4が設けられる。走
査ビーム3はこのハーフミラー4により2分割さ
れ、各々ミラー5,10でレチクル1の裏面1a
およびパターン形成面1bを同時に照射する。こ
のとき、裏面1aの照射点Pとパターン形成面1
bの照射点Qは相互にずれてレチクル1上の異る
位置を照射するようにミラー5,10およびハー
フミラー4が配置される。また分割された各走査
ビームはそれぞれの検査面上で焦点(ピント)が
合うように光路長が定められ、分割された両ビー
ムの光路長が等しくなるようにミラー5,10お
よびハーフミラー4が配置される。[Example] The present invention will be described below based on an example shown in the drawings. In FIG. 1, the reticle 1 is held by a support device (reticle stage), not shown, with the pattern back surface 1a facing upward and the pattern forming surface 1b facing downward. On the upper surface side of the reticle 1, a pattern backside illumination mirror 5 and a pattern backside detection light receiving system 30 are installed. The light receiving system 30 includes a condenser lens 6a, an aperture 7a, an optical fiber 8a, and a light sensor 9a such as a photomultiplier tube or a semiconductor light receiving element. Similarly, on the lower surface side of the reticle 1, a pattern forming surface irradiation mirror 10 and a pattern forming surface detecting light receiving system 31 are arranged. Like the light receiving system 30, the light receiving system 31 includes a condenser lens 6b, an aperture 7b, an optical fiber 8b, and an optical sensor 9b. Reference numeral 2 denotes a scanning optical system, which is composed of a rotating mirror (not shown) and the like. A laser beam from a laser light source (not shown) passes through the scanning optical system 2 and scans the reticle scanning surface as a scanning beam 3 in a direction perpendicular to the drawing. A half mirror 4 is provided on the optical path of the scanning beam 3 from the scanning optical system 2. The scanning beam 3 is divided into two by this half mirror 4, and each mirror 5 and 10 scans the back surface 1a of the reticle 1.
and pattern forming surface 1b are simultaneously irradiated. At this time, the irradiation point P on the back surface 1a and the pattern forming surface 1
The mirrors 5 and 10 and the half mirror 4 are arranged so that the irradiation points Q in b are shifted from each other and irradiate different positions on the reticle 1. The optical path length of each divided scanning beam is determined so that it is focused on each inspection surface, and mirrors 5, 10 and half mirror 4 are set so that the optical path lengths of both divided beams are equal. Placed.
レチクルの表面検査を行う場合、走査光学系2
からの走査ビーム3はハーフミラー4により2つ
に分割されレチクル1の裏面1aおよびパターン
形成面1bの両面上で適当な距離だけ離れた位置
P,Qを同時に照射しながら走査する。P点にゴ
ミ19が付着しているとこのゴミ19を照射した
走査ビームは乱反射して周囲全体に散乱し、散乱
光の一部が集光レンズ6aにより集光され絞り7
aを通過し光フアイバ8aにより光センサ9aに
導かれ検知される。各受光系30,31の絞り7
a,7bは各系内の集光レンズ6a,6bの集光
位置の近傍に配置してあるため、各受光系30,
31は反対面を照射する走査ビームによる反射散
乱光を受光せず各系配置側の走査ビームによる反
射散乱光のみを受光する。従つて、ゴミ19から
の散乱光は反射面の受光系31の光センサ9bに
は検知されない。 When inspecting the surface of a reticle, the scanning optical system 2
The scanning beam 3 from the reticle 1 is divided into two by a half mirror 4, and scans while simultaneously irradiating positions P and Q separated by an appropriate distance on both the back surface 1a and pattern forming surface 1b of the reticle 1. When dust 19 is attached to point P, the scanning beam that irradiates this dust 19 is diffusely reflected and scattered all over the surrounding area, and a part of the scattered light is focused by the condensing lens 6a and passes through the aperture 7.
a, and is guided to an optical sensor 9a by an optical fiber 8a and detected. Aperture 7 of each light receiving system 30, 31
a, 7b are arranged near the condensing positions of the condensing lenses 6a, 6b in each system, so each light receiving system 30,
31 does not receive the reflected and scattered light from the scanning beam irradiating the opposite surface, but only receives the reflected and scattered light from the scanning beam on the side where each system is disposed. Therefore, the scattered light from the dust 19 is not detected by the optical sensor 9b of the light receiving system 31 on the reflective surface.
絞り7a,7bの作用について第2図を用いて
さらに説明する。レチクル1の裏面1aを照射し
た走査ビーム3はレチクル表面で一部散乱されそ
の一部は実線で示すように集光レンズ6aにより
集光され絞り7aのスリツト40付近に集束しこ
のスリツト40を通過する。一方、走査ビーム3
の散乱されなかつた残りのビームはレチクル1を
透過し反対面のパターン形成面1b上のパターン
(図示しない)またはゴミ等により反射されて散
乱しその一部は点線で示すように集光レンズ6a
により集光される。しかしながら、このパターン
形成面1bからの散乱光(点線)は絞り7aのス
リツト40から外れた方向に集束し、絞り7aに
より遮断され光センサ9aには検知されない。こ
のように、検知すべき反射散乱光以外の散乱光を
遮断するように走査ビーム3の光軸と受光系30
の光軸(一点鎖線)とを所定の角度で配置され、
集光レンズの焦点、絞りのスリツトの大きさ、位
置等を予め適当な位置に配置しておく。反対面の
受光系31についても同様である。なお、集光レ
ンズ6a,6bは非散乱光がレチクル1を透過も
しくは反射される方向を避けて配置されている。 The function of the apertures 7a and 7b will be further explained using FIG. 2. The scanning beam 3 that illuminates the back surface 1a of the reticle 1 is partially scattered on the reticle surface, and a portion of it is focused by the condenser lens 6a as shown by the solid line, converging near the slit 40 of the aperture 7a, and passing through this slit 40. do. On the other hand, scanning beam 3
The remaining beam that was not scattered passes through the reticle 1 and is reflected and scattered by a pattern (not shown) on the pattern forming surface 1b on the opposite side or by dust, and a part of it is reflected by the condenser lens 6a as shown by the dotted line.
The light is focused by However, this scattered light (dotted line) from the pattern forming surface 1b is focused in a direction away from the slit 40 of the aperture 7a, is blocked by the aperture 7a, and is not detected by the optical sensor 9a. In this way, the optical axis of the scanning beam 3 and the light receiving system 30 are arranged so as to block scattered light other than the reflected and scattered light to be detected.
is placed at a predetermined angle with the optical axis (dotted chain line) of
The focal point of the condenser lens, the size and position of the slit of the diaphragm, etc. are set in advance at appropriate positions. The same applies to the light receiving system 31 on the opposite side. Note that the condenser lenses 6a and 6b are arranged so as to avoid the direction in which non-scattered light is transmitted or reflected by the reticle 1.
第3図に本発明の別の実施例の構成を示す。こ
の実施例はハーフミラー2で2分されたビーム3
を各々ミラー5,10によつてレチクル両面に対
し、垂直に照射する例である。この時分割された
両ビームの各照射面までの光学的距離を等しくす
るためハーフミラー4と一方のミラー10との間
に透明な平行平面板11を配置してある。またセ
ルフオツクレンズアレー(商品名)等の屈折率分
布形レンズアレー12a,12bを用いて集光す
ることにより受光系がコンパクト化している。セ
ルフオツクレンズアレー(商品名)のかわりにシ
リンドリカルレンズ、あるいはバーレンズ等を用
いてもよい。その他の構成、作用、効果は前述の
実施例と同様である。 FIG. 3 shows the configuration of another embodiment of the present invention. In this embodiment, a beam 3 is divided into two by a half mirror 2.
In this example, both surfaces of the reticle are irradiated perpendicularly by mirrors 5 and 10, respectively. A transparent parallel plane plate 11 is disposed between the half mirror 4 and one of the mirrors 10 in order to equalize the optical distances of the two time-divided beams to each irradiation surface. In addition, the light receiving system is made more compact by focusing the light using gradient index lens arrays 12a and 12b such as Self-Occupling Lens Array (trade name). A cylindrical lens, a bar lens, or the like may be used instead of the self-occurring lens array (trade name). Other configurations, operations, and effects are similar to those of the previous embodiment.
第4図に本発明のさらに別の実施例の構成を示
す。この実施例は、2つのミラー5,13の間に
ハーフミラー20を設けてレチクル1の同一面
(この例ではパターン裏面1a)を2本の走査ビ
ームで走査するように構成したものである。分割
された2本の走査ビームの光路長が等しくなるよ
うにハーフミラー20およびミラー5,13が配
置される。22,23は受光系であり、各走査ビ
ームに対応して設けられている。受光系22,2
3の構成は第1図または第3図の実施例の構成と
同様である。 FIG. 4 shows the configuration of yet another embodiment of the present invention. In this embodiment, a half mirror 20 is provided between two mirrors 5 and 13, and the same surface of the reticle 1 (pattern back surface 1a in this example) is scanned with two scanning beams. Half mirror 20 and mirrors 5 and 13 are arranged so that the optical path lengths of the two divided scanning beams are equal. 22 and 23 are light receiving systems, which are provided corresponding to each scanning beam. Light receiving system 22, 2
3 is similar to the structure of the embodiment shown in FIG. 1 or 3.
第5図は第4図の実施例の変形例を示す。この
例においては、分割された2本の走査ビームの光
路長補正手段として第3図の実施例と同様に透明
な平行平面板21を配設している。その他の構成
は第4図の実施例と同様である。 FIG. 5 shows a modification of the embodiment shown in FIG. In this example, a transparent parallel plane plate 21 is provided as the optical path length correction means for the two divided scanning beams, similar to the embodiment shown in FIG. The rest of the structure is the same as the embodiment shown in FIG.
なお、走査ビームの検査面に対する照射角度、
2本の走査ビームの照射位置間の距離等はハーフ
ミラー、ミラー平行平面等の各光学素子の位置を
変えることで調整できる。また、平行平面板の代
りにプリズムを用いて光路長を補正してもよい。
プリズムを用いた場合には照射角度の制御も可能
になる。 In addition, the irradiation angle of the scanning beam to the inspection surface,
The distance between the irradiation positions of the two scanning beams, etc. can be adjusted by changing the position of each optical element such as a half mirror, mirror-parallel plane, etc. Further, the optical path length may be corrected by using a prism instead of the parallel plane plate.
When a prism is used, it is also possible to control the irradiation angle.
第6図は本発明のさらに別の実施例を示す。こ
の実施例はレチクル1の両面にペリクル24a,
24bを貼付したペリクル付レチクルの表面検査
を行う異物検査装置を示す。分割された走査ビー
ムによりレチクル面(パターン裏面1aおよびパ
ターン形成面1b)を検査するとともにペリクル
表面からの反射光も受光してペリクル表面も検査
する。従つて、レチクル面検査用の受光系30,
31の他のペリクル表面検査用の受光系32,3
3が備わつている。これらの受光系32,33の
構成は受光系30,31の構成と同じであり、集
光レンズアレー112a,112b、絞り107
a,107b、光フアイバ108a,108bお
よび光センサ109a,109bからなつてい
る。この場合、各受光系の絞り7a,107a,
7b,107bを適当に形成することにより、隣
接する受光系30,32および31,33相互で
受光すべき散乱光の干渉が抑えられ検査面のクロ
ストークが防止されて各検査面の異物が確実に検
出される。 FIG. 6 shows yet another embodiment of the invention. In this embodiment, a pellicle 24a is provided on both sides of the reticle 1.
24b shows a foreign matter inspection device for inspecting the surface of a reticle with a pellicle attached thereto. The divided scanning beam inspects the reticle surface (pattern back surface 1a and pattern forming surface 1b), and also receives reflected light from the pellicle surface to inspect the pellicle surface. Therefore, the light receiving system 30 for inspecting the reticle surface,
Light receiving system 32, 3 for other pellicle surface inspection of 31
It is equipped with 3. The configurations of these light receiving systems 32 and 33 are the same as those of the light receiving systems 30 and 31, and include condenser lens arrays 112a and 112b, and an aperture 107.
a, 107b, optical fibers 108a, 108b, and optical sensors 109a, 109b. In this case, the apertures 7a, 107a,
By appropriately forming 7b and 107b, interference of scattered light to be received by adjacent light receiving systems 30, 32 and 31, 33 is suppressed, crosstalk between inspection surfaces is prevented, and foreign matter on each inspection surface is ensured. detected.
[発明の効果]
以上説明したように、基板面に複数のビームを
光路長を等しくして同時に照射することにより、
各照射部に同一の照射状態で照射でき各照射部で
の異物検査のばらつきを抑え迅速かつ正確な異物
検査を行なうことができるようになつた。[Effects of the Invention] As explained above, by simultaneously irradiating the substrate surface with a plurality of beams with equal optical path lengths,
It is now possible to irradiate each irradiation section with the same irradiation state, suppressing variations in foreign object inspection at each irradiation section, and allowing rapid and accurate foreign object inspection.
第1図は本発明の実施例の構成図、第2図は本
発明で用いる絞りの作用説明図、第3図は本発明
の別の実施例の構成図、第4図は本発明のさらに
別の実施例の構成図、第5図は第4図の実施例の
変形例の構成図、第6図は本発明のさらに別の実
施例の構成図、第7図は従来の異物検査装置の構
成図である。
1……レチクル、2……走査光学系、3……走
査ビーム、4,20……ハーフミラー、5,1
0,13……ミラー、6a,6b,106a,1
06b……集光レンズ、7a,7b,107a,
107b……絞り、9a,9b,109a,10
9b……光センサ。
Fig. 1 is a block diagram of an embodiment of the present invention, Fig. 2 is an explanatory diagram of the function of the aperture used in the present invention, Fig. 3 is a block diagram of another embodiment of the present invention, and Fig. 4 is a block diagram of another embodiment of the present invention. FIG. 5 is a configuration diagram of a modification of the embodiment shown in FIG. 4, FIG. 6 is a configuration diagram of yet another embodiment of the present invention, and FIG. 7 is a conventional foreign object inspection device. FIG. 1...Reticle, 2...Scanning optical system, 3...Scanning beam, 4,20...Half mirror, 5,1
0, 13...Mirror, 6a, 6b, 106a, 1
06b...Condensing lens, 7a, 7b, 107a,
107b...Aperture, 9a, 9b, 109a, 10
9b... Optical sensor.
Claims (1)
ームに分割し、複数の走査ビームの被検基板に入
射するまでの光路長を互いに等しくして複数の走
査ビームを同時に被検基板に照射するためのビー
ム分割照射手段と、被検基板上の各走査ビームの
照射部からの反射光を別々に検知するための複数
の光検知手段とを有することを特徴とする異物検
査装置。 2 前記ビーム分割照射手段は、基板両面を照射
するように走査ビームを分割することを特徴とす
る特許請求の範囲第1項記載の異物検査装置。 3 前記ビーム分割照射手段は、基板の同一面の
異なる位置を照射するように走査ビームを分割す
ることを特徴とする特許請求の範囲第1項記載の
異物検査装置。 4 前記ビーム分割照射手段は、ハーフミラーお
よび該ハーフミラーにより分割されたビームを反
射させて基板面を照射するためのミラーからなる
ことを特徴とする特許請求の範囲第1項から第3
項までのいづれか1項記載の異物検査装置。 5 分割された走査ビームの光路上に各走査ビー
ムの光路長を等しくするための光路長補正手段を
設けたことを特徴とする特許請求の範囲第1項か
ら第4項までのいづれか1項記載の異物検査装
置。 6 前記光路長補正手段は、透明平行平面板から
なることを特徴とする特許請求の範囲第5項記載
の異物検査装置。 7 前記光路長補正手段は、プリズムからなるこ
とを特徴とする特許請求の範囲第5項記載の異物
検査装置。 8 前記光検知手段は、該光検知手段で検知すべ
き照射部以外からの反射光を遮断するための絞り
手段を有することを特徴とする特許請求の範囲第
1項から第7項までのいづれか1項記載の異物検
査装置。[Claims] 1. The scanning beam from the scanning optical system is divided into a plurality of scanning beams, and the optical path lengths of the plurality of scanning beams until they are incident on the substrate to be inspected are made equal to each other, so that the plurality of scanning beams are simultaneously applied. A foreign object inspection characterized by having a beam split irradiation means for irradiating the test substrate, and a plurality of light detection means for separately detecting the reflected light from the irradiation part of each scanning beam on the test board. Device. 2. The foreign matter inspection apparatus according to claim 1, wherein the beam division irradiation means divides the scanning beam so as to irradiate both sides of the substrate. 3. The foreign matter inspection apparatus according to claim 1, wherein the beam division irradiation means divides the scanning beam so as to irradiate different positions on the same surface of the substrate. 4. The beam split irradiation means comprises a half mirror and a mirror for reflecting the beam split by the half mirror and irradiating the substrate surface.
Foreign matter inspection device according to any one of the preceding paragraphs. 5. Any one of claims 1 to 4, characterized in that an optical path length correction means for equalizing the optical path length of each scanning beam is provided on the optical path of the divided scanning beams. foreign matter inspection equipment. 6. The foreign matter inspection apparatus according to claim 5, wherein the optical path length correction means comprises a transparent parallel plane plate. 7. The foreign matter inspection apparatus according to claim 5, wherein the optical path length correction means is comprised of a prism. 8. Any one of claims 1 to 7, wherein the light detection means has an aperture means for blocking reflected light from other than the irradiation part to be detected by the light detection means. Foreign matter inspection device according to item 1.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61060871A JPS62219631A (en) | 1986-03-20 | 1986-03-20 | Foreign object inspection device |
| US07/348,177 US4886975A (en) | 1986-02-14 | 1989-05-02 | Surface examining apparatus for detecting the presence of foreign particles on two or more surfaces |
| US07/406,090 US5017798A (en) | 1986-02-14 | 1989-09-12 | Surface examining apparatus for detecting the presence of foreign particles on two or more surfaces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61060871A JPS62219631A (en) | 1986-03-20 | 1986-03-20 | Foreign object inspection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62219631A JPS62219631A (en) | 1987-09-26 |
| JPH0569300B2 true JPH0569300B2 (en) | 1993-09-30 |
Family
ID=13154878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61060871A Granted JPS62219631A (en) | 1986-02-14 | 1986-03-20 | Foreign object inspection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62219631A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011069749A (en) * | 2009-09-28 | 2011-04-07 | Fujitsu Ltd | Apparatus and method for inspecting surface |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3101290B2 (en) * | 1989-03-15 | 2000-10-23 | キヤノン株式会社 | Surface condition inspection device, exposure apparatus, and surface condition inspection method |
-
1986
- 1986-03-20 JP JP61060871A patent/JPS62219631A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011069749A (en) * | 2009-09-28 | 2011-04-07 | Fujitsu Ltd | Apparatus and method for inspecting surface |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62219631A (en) | 1987-09-26 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |