JPH0572105B2 - - Google Patents
Info
- Publication number
- JPH0572105B2 JPH0572105B2 JP1012557A JP1255789A JPH0572105B2 JP H0572105 B2 JPH0572105 B2 JP H0572105B2 JP 1012557 A JP1012557 A JP 1012557A JP 1255789 A JP1255789 A JP 1255789A JP H0572105 B2 JPH0572105 B2 JP H0572105B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- capillary
- ball
- bonding
- directly above
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01551—Changing the shapes of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/0711—Apparatus therefor
- H10W72/07141—Means for applying energy, e.g. ovens or lasers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07521—Aligning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
- H10W72/07531—Techniques
- H10W72/07532—Compression bonding, e.g. thermocompression bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
この発明は、電子部品製造のワイヤボンデイン
グ方法に関し、詳しく言えばキヤピラリとワイヤ
との干渉防止に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application This invention relates to a wire bonding method for manufacturing electronic components, and more specifically, to prevention of interference between a capillary and a wire.
(ロ) 従来の技術
従来のワイヤボンデイングを、サーマルヘツド
製造の場合を例にとり、第2図を参照しながら説
明する。第2図aにおいて、15は、セラミツク
基板、14は、このセラミツク基板15上に形成
されている導体パターン、13は、駆動用ICで
ある。また、12は、キヤピラリであり、中空部
12aを通つて、下端面12bより、例えばAu
(金)ワイヤ11が下方に垂下している。Auワイ
ヤ11の下端は、電気トーチ若しくは水素火炎ト
ーチにより加熱されてボール11aとなつてい
る。(b) Prior Art Conventional wire bonding will be explained using the case of manufacturing a thermal head as an example with reference to FIG. In FIG. 2a, 15 is a ceramic substrate, 14 is a conductor pattern formed on the ceramic substrate 15, and 13 is a driving IC. Further, 12 is a capillary, which passes through the hollow part 12a and from the lower end surface 12b, for example, Au.
(Gold) wire 11 hangs downward. The lower end of the Au wire 11 is heated by an electric torch or a hydrogen flame torch to form a ball 11a.
次に、キヤピラリ下端面12bが駆動用IC1
3のバンド13aに押し付けられ、ボール11a
がつぶされてパンド13aに圧着される。この
時、圧着が容易となるように、駆動用IC13を
加熱したり、これと共に、あるいはこれに代え
て、キヤピラリ12に超音波振動が加えられる。 Next, the lower end surface 12b of the capillary is connected to the drive IC 1.
The ball 11a is pressed against the band 13a of No. 3.
is crushed and crimped onto the bread 13a. At this time, in order to facilitate crimping, the drive IC 13 is heated, and together with or in place of this, ultrasonic vibration is applied to the capillary 12.
第2図cは、キヤピラリ12が上方へ移動した
状態を示しており、Auワイヤ11が垂直に立ち
上がつた状態を示している。さらに、第2図d
は、キヤピラリ12が右方に移動した後、下方に
移動し、キヤピラリ下端面12bが導体パターン
14に押し付けられ、ワイヤ11が導体パターン
14に圧着された状態を示している。この時の押
付力でワイヤ11は切断される。その後、キヤピ
ラリ12は再び上昇し、下端面12bよりワイヤ
11を突出させ、第2図aに示すようにボール1
1aが形成される。 FIG. 2c shows a state in which the capillary 12 has moved upward, and shows a state in which the Au wire 11 stands up vertically. Furthermore, Figure 2 d
shows a state in which the capillary 12 moves to the right and then moves downward, the lower end surface 12b of the capillary is pressed against the conductor pattern 14, and the wire 11 is crimped to the conductor pattern 14. The wire 11 is cut by the pressing force at this time. Thereafter, the capillary 12 rises again, causing the wire 11 to protrude from the lower end surface 12b, and the ball 1 as shown in FIG. 2a.
1a is formed.
(ハ) 発明が解決しようとする課題
第2図dにおいて、キヤピラリ12が右方に移
動する際、ワイヤ11はボール11aの付根の部
分より側方に折れ曲がるのではなく、軟化点11
cより側方に折れ曲がる。Auワイヤ11には結
晶化されたものが使用されるが、このAuワイヤ
11を加熱してボール11aを形成する際、ボー
ル11aより上の部分が再結晶する〔第2図a参
照〕。この再結晶した部分11dの最も軟らかい
点である軟化点は11cとなるが、これはボール
11aよりも上方にできるため、第2図dに示す
ようにボール11aよりワイヤが垂直に立ち上
げ、軟化点11cより側方に曲げるようにしなけ
れば、ワイヤ11に損傷を与えてしまう。(C) Problems to be Solved by the Invention In FIG. 2d, when the capillary 12 moves to the right, the wire 11 does not bend laterally from the base of the ball 11a, but bends at the softening point 11.
Bend laterally from c. A crystallized Au wire 11 is used, and when the Au wire 11 is heated to form the ball 11a, the portion above the ball 11a recrystallizes (see FIG. 2a). The softening point, which is the softest point of this recrystallized portion 11d, is 11c, which is formed above the ball 11a, so that the wire rises perpendicularly from the ball 11a, as shown in FIG. 2d, and softens. If the wire 11 is not bent laterally from the point 11c, the wire 11 will be damaged.
サーマルヘツド等では、ワイヤボンデイングの
密度が高くなり、隣接するパツド間の距離が小さ
くなつてしまう。このため、第2図eに示すよう
に、パツド13aにボール11aを圧着する際、
キヤピラリ12が隣接するパツド13a′のワイヤ
11′にあたり、ワイヤ11′がボール11a′の直
上より曲がり、この部分に損傷を与えてしまう。
また、ワイヤ自体が弾性を有しているから、ワイ
ヤが元の位置に戻ろうとするが、ワイヤが戻りす
ぎて第2図e中11″のように反対側に倒れてし
まうことがある。このようにワイヤが倒れてしま
うと、樹脂封止の際等に隣接するワイヤ同志が接
触し短絡してしまう危険性があつた。 In thermal heads and the like, the density of wire bonding becomes high and the distance between adjacent pads becomes small. Therefore, as shown in FIG. 2e, when pressing the ball 11a onto the pad 13a,
The capillary 12 hits the wire 11' of the adjacent pad 13a', and the wire 11' bends from directly above the ball 11a', damaging this portion.
Also, since the wire itself has elasticity, it tries to return to its original position, but it may return too much and fall to the opposite side as shown at 11'' in Figure 2e. If the wires were to fall down like this, there was a risk that adjacent wires would come into contact with each other during resin sealing and cause a short circuit.
このようなキヤピラリとワイヤの干渉を防止す
るために、キヤピラリのコーン角α〔第2図a参
照〕を可能な限り小さくとることが望ましい。し
かし、キヤピラリはある程度の荷重でもつて、パ
ツド、導体パターン等に押し付けられるものであ
るから、キヤピラリが破損し易く耐久性に欠ける
問題点があつた。 In order to prevent such interference between the capillary and the wire, it is desirable to make the cone angle α of the capillary as small as possible (see FIG. 2a). However, since the capillary is pressed against pads, conductor patterns, etc. even with a certain amount of load, there is a problem that the capillary is easily damaged and lacks durability.
この発明は、上記に鑑みなされたものであり、
ワイヤとキヤピラリとの干渉を防止できるワイヤ
ボンデイング方法の提供を目的としている。 This invention was made in view of the above,
The purpose of this invention is to provide a wire bonding method that can prevent interference between wires and capillaries.
(ニ) 課題を解決するための手段及び作用
上記課題を解決するため、この発明のワイヤボ
ンデイング方法は、キヤピラリ下端よりワイヤの
1端を突出させ、この突出したワイヤの1端を加
熱してボールを形成し、前記キヤピラリ下端を第
1のボンデイング箇所に押し付け、前記ワイヤの
ボールを圧着した後前記キヤピラリを第2のボン
デイング箇所上に移動させ、再び前記キヤピラリ
をこの第2のボンデイング箇所に押し付け、前記
ワイヤの他端をこの第2のボンデイング箇所に圧
着するものにおいて、前記ワイヤの1端を加熱し
てボールを形成する際、ワイヤの軟化点を前記ボ
ール直上に位置させて、このワイヤをボールの直
上で曲げ可能とし、このワイヤを前記第1のボン
デイング箇所より斜上方に立ち上げることを特徴
とするものである。このようにワイヤが斜上方に
立ち上がることにより、キヤピラリ下端にすでに
設置されたワイヤが接触しにくくなり、キヤピラ
リとワイヤとの干渉を防止することができる。(d) Means and Effects for Solving the Problems In order to solve the above problems, the wire bonding method of the present invention protrudes one end of the wire from the lower end of the capillary and heats the one end of the protruding wire to form a ball. forming a lower end of the capillary against a first bonding location, crimping the ball of the wire, moving the capillary onto a second bonding location, and pressing the capillary against the second bonding location again; In the device in which the other end of the wire is crimped to the second bonding location, when heating one end of the wire to form a ball, the softening point of the wire is located directly above the ball, and the wire is heated to form the ball. It is characterized in that the wire can be bent directly above the bonding point, and the wire is raised obliquely upward from the first bonding point. Since the wire rises diagonally upward in this way, it becomes difficult for the wire already installed at the lower end of the capillary to come into contact with it, and interference between the capillary and the wire can be prevented.
(ホ) 実施例
この発明の一実施例を第1図に基づいて以下に
説明する。(e) Embodiment An embodiment of the present invention will be described below based on FIG. 1.
この実施例は、この発明をサーマルヘツドの駆
動用ICと導体パターン間のワイヤボンデイング
に適用したものである。第1図aは、キヤピラリ
2の下端面2bより、Auワイヤ1を突出させ、
このAuワイヤ1の先端を電気トーチもしくは水
素火炎トーチ(共に図示せず)で加熱してボール
1aを形成した状態を示している。この時、ワイ
ヤ1の軟化点1cがボール1a直上にできるよ
う、Auワイヤ1の組成及び加熱条件が調整され
る。 In this embodiment, the present invention is applied to wire bonding between a thermal head driving IC and a conductor pattern. In FIG. 1a, the Au wire 1 is protruded from the lower end surface 2b of the capillary 2,
The tip of the Au wire 1 is heated with an electric torch or a hydrogen flame torch (both not shown) to form a ball 1a. At this time, the composition and heating conditions of the Au wire 1 are adjusted so that the softening point 1c of the wire 1 is located directly above the ball 1a.
第1図bにおいて、3は駆動用IC、4は導体
パターン、5はセラミツク基板をそれぞれ示して
いる。駆動用IC3、導体パターン4、セラミツ
ク基板5は、ワイヤの圧着を容易にするため、例
えば300℃の温度まで加熱されている。 In FIG. 1b, numeral 3 indicates a driving IC, numeral 4 a conductor pattern, and numeral 5 a ceramic substrate. The driving IC 3, the conductive pattern 4, and the ceramic substrate 5 are heated to a temperature of, for example, 300° C. to facilitate crimping of the wires.
キヤピラリ2は、駆動用IC3のパツド(第1
のボンデイング箇所)3a上に下降し、ボール1
aがキヤピラリ下端面2bで押しつぶされて、パ
ツド3aに圧着されている。この時、キヤピラリ
2には超音波振動を与えて、より完全な圧着が行
われる。もちろん、加熱あるいは超音波振動のい
ずれか一方だけを与えるようにしてもよい。 Capillary 2 is connected to the pad (first
(bonding point) 3a, and ball 1
a is crushed by the lower end surface 2b of the capillary and crimped to the pad 3a. At this time, ultrasonic vibration is applied to the capillary 2 to achieve more complete crimping. Of course, only either heating or ultrasonic vibration may be applied.
次に、キヤピラリ2が上昇して、ワイヤ1がキ
ヤピラリ中空部2aより引出されていく。そし
て、セラミツク基板5が第1図c紙面左方向に移
動して行く。この時、ワイヤ1の軟化点1cはボ
ール1aの直上に位置しているから、ボール1a
直上でワイヤ1が折曲がり、ワイヤ1はパツド3
aより斜め上方に立ち上がる。 Next, the capillary 2 is raised and the wire 1 is pulled out from the capillary hollow part 2a. Then, the ceramic substrate 5 moves to the left in the paper of FIG. 1c. At this time, since the softening point 1c of the wire 1 is located directly above the ball 1a, the ball 1a
Wire 1 is bent directly above, and wire 1 is connected to pad 3.
It stands diagonally upwards from a.
さらにセラミツク基板5が左方に移動すると共
に、キヤピラリ2が下降し、導体パターン(第2
のボンデイング箇所)4上に、ワイヤ1の他端1
bが圧着させられる〔第1図d参照〕。この圧着
の際にワイヤ1が切断され、その後、キヤピラリ
2が上昇して再びボール1aが形成される。 As the ceramic substrate 5 further moves to the left, the capillary 2 descends and the conductor pattern (second
bonding point) 4, the other end 1 of the wire 1
b is crimped (see Figure 1d). The wire 1 is cut during this crimping, and then the capillary 2 is raised to form the ball 1a again.
このようにして設置されたワイヤ1は、パツド
3aより斜め上方に立ち上がり、曲率Rで曲げら
れた後斜め下方に向い導体パターン4に達する。
従つて、隣接するパツドにワイヤボンデイングす
る際に、パツド間の距離が小さくても、すでに設
置されたワイヤとキヤピラリとの干渉が生じにく
い。このため、ワイヤに損傷が生じにくく、ま
た、ワイヤが曲がり他のワイヤと短絡する事故が
回避される。また、ワイヤとキヤピラリとの干渉
が生じにくいから、キヤピラリ2のコーン角α
〔第1図a参照〕を大きくすることができ、キヤ
ピラリの耐久性も向上できる。 The wire 1 thus installed rises obliquely upward from the pad 3a, is bent at a curvature R, and then turns obliquely downward to reach the conductor pattern 4.
Therefore, when wire bonding is performed to adjacent pads, interference between the already installed wire and the capillary is less likely to occur even if the distance between the pads is small. Therefore, the wire is less likely to be damaged, and an accident in which the wire bends and shorts with other wires is avoided. In addition, since interference between the wire and the capillary is less likely to occur, the cone angle α of the capillary 2 is
[See FIG. 1a] can be increased, and the durability of the capillary can also be improved.
なお、上記実施例では、キヤピラリが垂直方向
に、セラミツク基板が水平方向に動くようにして
いるが、キヤピラリのみ垂直・水平方向に動かす
あるいはセラミツク基板のみを垂直・水平方向に
動かす構成等としてもよく、適宜設計変更可能で
ある。 In the above embodiment, the capillary is moved vertically and the ceramic substrate is moved horizontally, but a structure in which only the capillary is moved vertically or horizontally, or only the ceramic substrate is moved vertically or horizontally may be used. , the design can be changed as appropriate.
(ヘ) 発明の効果
以上説明したように、この発明のワイヤボンデ
イング方法は、ワイヤの1端を加熱してボールを
形成する際、ワイヤの軟化点を前記ボール直上に
位置させて、このワイヤがボールの直上で曲げ可
能とし、このワイヤを前記第1のボンデイング箇
所より斜め上方に立ち上げることを特徴とするも
のであるから、ワイヤとキヤピラリとの干渉を防
止することができる。よつて、ワイヤの損傷及び
ワイヤ間の短絡を防止できると共に、キヤピラリ
の耐久性を向上できる利点を有している。(f) Effects of the Invention As explained above, in the wire bonding method of the present invention, when heating one end of the wire to form a ball, the softening point of the wire is located directly above the ball, and the wire bonding method Since the wire can be bent directly above the ball and is raised diagonally upward from the first bonding location, interference between the wire and the capillary can be prevented. Therefore, damage to the wires and short circuits between the wires can be prevented, and the durability of the capillary can be improved.
第1図a、第1図b、第1図c及び第1図d
は、この発明の一実施例に係るワイヤボンデイン
グの過程を説明する図、第2図a、第2図b、第
2図c及び第2図dは、従来のワイヤボンデイン
グの過程を説明する図、第2図eは、従来のワイ
ヤボンデイングの問題点を説明する図である。
1:ワイヤ、1a:ボール、1c:軟化点、
2:キヤピラリ、2b:キヤピラリ下端面、3
a:パツド、4:導体パターン。
Figure 1a, Figure 1b, Figure 1c and Figure 1d
2A, 2B, 2C, and 2D are diagrams illustrating a conventional wire bonding process. , FIG. 2e is a diagram illustrating the problems of conventional wire bonding. 1: wire, 1a: ball, 1c: softening point,
2: Capillary, 2b: Capillary lower end surface, 3
a: padded, 4: conductor pattern.
Claims (1)
せ、この突出したワイヤの1端を加熱してボール
を形成し、前記キヤピラリ下端を第1のボンデイ
ング箇所に押し付け、前記ワイヤのボールを圧着
した後前記キヤピラリを第2のボンデイング箇所
上に移動させ、再び前記キヤピラリをこの第2の
ボンデイング箇所に押し付け、前記ワイヤの他端
をこの第2のボンデイング箇所に圧着するワイヤ
ボンデイング方法において、 前記ワイヤの1端を加熱してボールを形成する
際、ワイヤの軟化点を前記ボール直上に位置させ
て、このワイヤをボールの直上で曲げ可能とし、
このワイヤを前記第1のボンデイング箇所より斜
め上方に立ち上げることを特徴とするワイヤボン
デイング方法。[Claims] 1. One end of a wire is made to protrude from the lower end of a capillary, one end of the protruding wire is heated to form a ball, the lower end of the capillary is pressed against a first bonding location, and the ball of the wire is heated. In the wire bonding method, the capillary is moved onto a second bonding location after crimping, the capillary is again pressed against the second bonding location, and the other end of the wire is crimped to the second bonding location, When heating one end of the wire to form a ball, the softening point of the wire is located directly above the ball so that the wire can be bent directly above the ball;
A wire bonding method characterized in that the wire is raised diagonally upward from the first bonding location.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1012557A JPH02192748A (en) | 1989-01-20 | 1989-01-20 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1012557A JPH02192748A (en) | 1989-01-20 | 1989-01-20 | Wire bonding method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02192748A JPH02192748A (en) | 1990-07-30 |
| JPH0572105B2 true JPH0572105B2 (en) | 1993-10-08 |
Family
ID=11808643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1012557A Granted JPH02192748A (en) | 1989-01-20 | 1989-01-20 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02192748A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5018420B2 (en) * | 2007-11-19 | 2012-09-05 | 株式会社デンソー | Wire bonding method and wire bonding structure |
-
1989
- 1989-01-20 JP JP1012557A patent/JPH02192748A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02192748A (en) | 1990-07-30 |
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