JPH0573334B2 - - Google Patents
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- Publication number
- JPH0573334B2 JPH0573334B2 JP63134140A JP13414088A JPH0573334B2 JP H0573334 B2 JPH0573334 B2 JP H0573334B2 JP 63134140 A JP63134140 A JP 63134140A JP 13414088 A JP13414088 A JP 13414088A JP H0573334 B2 JPH0573334 B2 JP H0573334B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- amorphous silicon
- silicon nitride
- deposited
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は薄膜形成方法に関し、より詳細には光
導電率が高く、熱処理による光学ギヤツプの変化
の少ない光電変換素子に用いるのに好適なアモル
フアスシリコン系膜の形成方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method for forming a thin film, and more particularly to an amorphous film having high photoconductivity and suitable for use in photoelectric conversion elements with little change in optical gap due to heat treatment. The present invention relates to a method for forming an assilicon film.
［従来の技術］
アモルフアスシリコンカーバイト、アモルフア
スシリコン、アモルフアスシリコンゲルマニウム
等のアモルフアスシリコン系膜は太陽電池等の光
電変換素子、FET等のアクテイブマトリツクス
LCDなどに応用されつつあるため、アモルフア
スシリコン系膜の成膜法の研究成果も多発発表さ
れている。しかしながら、研究発表はほとんど成
膜過程の研究で占められ、成膜後、外気に取りだ
すまでの処理技術、熱処理技術に関するものは少
ない。しかしながら、アモルフアスシリコン系膜
は空気中に曝されると劣化し、またアモルフアス
シリコン系膜に長時間光を照射すると、その膜質
が変化する現像、すなわちStraeber−Wronshi効
果がおこる。この効果を防止する対策としては、
結合水素量が低く、また不純物量を低減したア
モルフアスシリコン系膜の採用とそのための製膜
法の改善、ａ−Si：Ｆ：Ｈ膜の採用、光特性
変化が生じにくく、膜質の生じてもデバイス特性
の影響の小さい素子構造の採用、等の方法が考え
られている。[Prior art] Amorphous silicon films such as amorphous silicon carbide, amorphous silicon, and amorphous silicon germanium are used in photoelectric conversion elements such as solar cells and active matrices such as FETs.
Since it is being applied to LCDs and other devices, research results on methods for forming amorphous silicon films have been frequently published. However, most of the research publications are focused on research on the film formation process, and there are few on processing and heat treatment technologies after film formation until it is taken out to the outside air. However, amorphous silicon films deteriorate when exposed to air, and when an amorphous silicon film is irradiated with light for a long period of time, development in which the film quality changes, ie, the Straeber-Wronshi effect occurs. Measures to prevent this effect include:
Adoption of an amorphous silicon film with a low amount of bonded hydrogen and reduced amount of impurities, improvement of the film forming method for this, and adoption of an a-Si:F:H film, less likely to change optical properties, and improved film quality. Also, methods are being considered, such as adopting an element structure that has less influence on device characteristics.
［発明が解決しようとする課題］
このように、従来のアモルフアスシリコン系膜
は空気中に曝されること、および光照射に伴なう
膜質変化、すなわち光劣化が問題となつている。
光劣化の問題はアモルフアスシリコン半導体太陽
電池等光電変換素子の特性の劣化でもあり、光劣
化の問題を改善することはアモルフアスシリコン
系光電変換素子の信頼製の向上の最大の課題であ
る。光劣化の少ないアモルフアスシリコン系薄膜
を形成できれば、安定な光電変換素子を提供する
ことができる。[Problems to be Solved by the Invention] As described above, conventional amorphous silicon-based films have been exposed to air and have had problems with film quality changes due to light irradiation, that is, photodeterioration.
The problem of photodegradation is also the deterioration of the characteristics of photoelectric conversion elements such as amorphous silicon semiconductor solar cells, and improving the problem of photodegradation is the biggest challenge in improving the reliability of amorphous silicon photoelectric conversion elements. If an amorphous silicon-based thin film with little photodeterioration can be formed, a stable photoelectric conversion element can be provided.
このような状況を解決するために本発明の目的
は従来の問題点を解消し、光劣化の少ないアモル
フアスシリコン系膜の形成方法を提供することに
ある。 In order to solve this situation, an object of the present invention is to solve the conventional problems and provide a method for forming an amorphous silicon film with little photodeterioration.
［課題を解決するための手段］
かかる目的を達成するために、本発明は、基板
上に第１の窒化シリコン系膜を堆積し、第１の窒
化シリコン系膜の上にアモルフアスシリコン系膜
を堆積し、外気に露すことなく、アモルフアスシ
リコン系膜上に第２の窒化シリコン系膜を堆積す
ることを特徴とする。[Means for Solving the Problems] In order to achieve the object, the present invention deposits a first silicon nitride film on a substrate, and deposits an amorphous silicon film on the first silicon nitride film. A second silicon nitride film is deposited on the amorphous silicon film without being exposed to the outside air.
本発明は基板上に第１の窒化シリコン系膜を堆
積し、第１の窒化シリコン系膜の上にアモルフア
スシリコン系膜を堆積し、第２の窒化シリコン系
膜を堆積し、得られた膜に熱処理を施すことを特
徴とする。 In the present invention, a first silicon nitride film is deposited on a substrate, an amorphous silicon film is deposited on the first silicon nitride film, and a second silicon nitride film is deposited. It is characterized by subjecting the film to heat treatment.
アモルフアスシリコン系膜とは、アモルフアス
シリコン膜、水素化アモルフアスシリコン（以下
ａ−Si：Ｈ）およびそれらにＢのような第族元
素、Ｃ、Ge、Snのような第族元素、およびＮ、
Ｐ、Asのような第族元素を含むものを言う。 Amorphous silicon-based films include amorphous silicon films, hydrogenated amorphous silicon (hereinafter referred to as a-Si:H), and group elements such as B, group elements such as C, Ge, and Sn, and N,
Refers to substances containing group elements such as P and As.
ａ−Si：Ｈ膜の電気導電型を制御するために
は、ジボラン（B2H6）、ホスフイン（PH3）、ア
ルシン（AsH3）などのガスをシランまたは高次
シランと共に適宜の量導入する。SiH4にB2H6を
添加することでｐ形ａ−Si：Ｈとなり、PH3を添
加することによりｎ形ａ−Si：Ｈとなり、ドーピ
ング量と共に導電率が向上する。 In order to control the electrical conductivity type of the a-Si:H film, an appropriate amount of gas such as diborane (B 2 H 6 ), phosphine (PH 3 ), or arsine (AsH 3 ) is introduced together with silane or higher silane. do. By adding B 2 H 6 to SiH 4 it becomes p-type a-Si:H, and by adding PH 3 it becomes n-type a-Si:H, and the conductivity improves with the doping amount.
アモルフアスシリコン系膜の製法には、グロー
放電法、熱分解、スパツタリング、光CVDなど
の各種の方法があり、反応室構成も、一室反応室
（平行平板形電極方式、円孤形電極方式等）、多室
分離反応室および連続反応室などがある。 There are various methods for manufacturing amorphous silicon films, such as glow discharge method, thermal decomposition, sputtering, and photo-CVD. etc.), multi-chamber separation reaction chambers, and continuous reaction chambers.
合金形アモルフアスシリコン系膜であるａ−
SiGe：Ｈ、ａ−SiC：Ｈ、ａ−SiN：Ｈ、ａ−
SiSn：Ｈは次のようにして生成することができ
る。ａ−SiGe：Ｈ膜生成用ガスには主として
SiH4とGeH4が主に使われる。ａ−SiC：Ｈ膜の
Ｃの原料としては、CH4またはC2H4が用いられ
る。Ｂのドーピングによる光照射の導電率の増大
が、C2H4ガスを用いた場合にはCH4を用いたと
きよりも低く、太陽電池用としては、CH4ガスを
用いたａ−SiC：Ｈが優れていると言わせれてい
る。ａ−Si：ＮはSiH4とNH3のグロー放電分解、
あるいはSiH4とN2のグロー放電分解で得られる。
ａ−SiSn：Ｈは、SiH4とSn（CH3）4の混合ガスを
用い、基板を加熱して高周波を印加してグロー放
電によつて成長させる。最近SiH4とSnH4を用い
ａ−SiSn：Ｈの製膜法が検討されている。 a- which is an alloy type amorphous silicon film
SiGe:H, a-SiC:H, a-SiN:H, a-
SiSn:H can be produced as follows. a-SiGe:H film generation gas mainly uses
SiH4 and GeH4 are mainly used. CH 4 or C 2 H 4 is used as the raw material for C in the a-SiC:H film. The increase in conductivity of light irradiation due to B doping is lower when C 2 H 4 gas is used than when CH 4 is used, and for solar cells, a-SiC using CH 4 gas: It is said that H is superior. a-Si:N glow discharge decomposition of SiH4 and NH3 ,
Alternatively, it can be obtained by glow discharge decomposition of SiH 4 and N 2 .
a-SiSn:H is grown by glow discharge using a mixed gas of SiH 4 and Sn(CH 3 ) 4 by heating the substrate and applying high frequency. Recently, a method of forming an a-SiSn:H film using SiH 4 and SnH 4 has been studied.
また、SiH4＋CH4の混合ガスにB2H6を添加し
てプラズマ反応で形成したｐ型ａ−SiC：Ｂ：Ｈ
は、優れた光起電力特性を有するワイドギヤツプ
材料である。 In addition, p-type a-SiC:B:H was formed by plasma reaction by adding B 2 H 6 to a mixed gas of SiH 4 + CH 4 .
is a wide gap material with excellent photovoltaic properties.
従来のａ−SiGe：Ｈは、光感度が悪く、太陽
電池用材料として用いるには特性が不十分であつ
たが、これに対してSiF4＋GeF4＋H2によるａ−
SiGe：Ｆ：Ｈは形成条件の最適化によつて良好
な特性が得られている。 Conventional a- SiGe :H had poor photosensitivity and insufficient properties to be used as a material for solar cells .
Good characteristics of SiGe:F:H have been obtained by optimizing the formation conditions.
上に述べたａ−SiC：Ｆ：Ｈとａ−SiGe：Ｆ：
Ｈもアモルフアスシリコン系膜に適用可能であ
る。 The above a-SiC:F:H and a-SiGe:F:
H can also be applied to amorphous silicon films.
窒化シリコン系膜とは、ａ−SixN1-Xに限られ
ず、ａ−SiNX：Ｃ：Ｈ、ａ−SiNX：Ｏ：Ｈも示
すものと定義する。このように窒化シリコン系膜
には、原料ガスの水素やチヤンバーのリークによ
り酸素が混入することもあり、更に意図的に歪の
緩和、強調のために異なる原子を加える場合もあ
る。 The silicon nitride film is not limited to a-SixN 1-X , but is also defined as a-SiN x :C:H and a-SiN x :O:H. As described above, a silicon nitride film may be contaminated with oxygen due to hydrogen in the source gas or leakage from the chamber, and furthermore, different atoms may be added intentionally to alleviate or emphasize strain.
［作用］
本発明によれば、アモルフアスシリコン系膜を
窒化シリコン系膜で挟んでサンドイツチ構造とす
ることにより、アモルフアスシリコン膜は外気に
さらされることなく保護させるので、光導電率が
高く、光学ギヤツプの変化の小さい薄膜を得るこ
とができる。従つて、光劣化をおさえ、光電特性
の良好な薄膜を得ることができる。[Function] According to the present invention, by sandwiching an amorphous silicon film between silicon nitride films to form a sandwich structure, the amorphous silicon film is protected without being exposed to the outside air, and therefore has high photoconductivity. A thin film with a small change in optical gap can be obtained. Therefore, it is possible to suppress photodeterioration and obtain a thin film with good photoelectric properties.
［実施例］
以下、図面を参照して本発明を詳細に説明す
る。[Example] Hereinafter, the present invention will be described in detail with reference to the drawings.
本発明のアモルフアシリコン系膜の形成方法に
用いた装置は、20cmφのCVDの電極を有する平
行平板型プラズマCVD装置を用いた。 The apparatus used in the method of forming an amorphous silicon film of the present invention was a parallel plate type plasma CVD apparatus having a CVD electrode of 20 cmφ.
水素化アモルフアスシリコン膜の作製条件は、
モノシラン（SiH4）の流量10SCCM、反応室内
圧力を0.5Torr、高周波電力を20Wとして、基板
温度を250℃で膜を堆積させた。 The manufacturing conditions for hydrogenated amorphous silicon film are as follows:
The film was deposited at a monosilane (SiH 4 ) flow rate of 10 SCCM, reaction chamber pressure of 0.5 Torr, high frequency power of 20 W, and substrate temperature of 250°C.
窒化シリコン膜の作製条件は、モノシラン
（SiH4）の流量を5SCCM、アンモニア（NH3）
の流量を100SCCM、反応室内応力を1.5Torr、高
周波電力を30Wと一定にして、基板温度250℃で
膜を堆積させた。 The fabrication conditions for the silicon nitride film were a flow rate of monosilane (SiH 4 ) of 5 SCCM, and ammonia (NH 3 ) flow rate of 5 SCCM.
The film was deposited at a substrate temperature of 250°C with a constant flow rate of 100 SCCM, stress in the reaction chamber of 1.5 Torr, and high-frequency power of 30 W.
本実施例に用いることのできる基板としては、
石英ガラス、ホウケイ酸ガラス、単結晶シリコン
などが例示できるが、本実施例においては石英ガ
ラスを使用した。 Substrates that can be used in this example include:
Examples include quartz glass, borosilicate glass, and single crystal silicon, and in this example, quartz glass was used.
石英ガラス基板上へ、窒化シリコン膜を厚さ約
600Åの厚さで堆積させ、この窒化シリコン膜上
に水素化アモルフアスシリコンを5000Å〜6000Å
の厚さで堆積させた。このようにして作製した膜
を外気に露出させることなく約600Åの厚さで窒
化シリコン膜を堆積させて、サンドイツチ構造の
試料を作成した。この試料を水素雰囲気下におい
て350℃、400℃、450℃および500℃において30分
間熱処理した後、AM（air mass）1.5スペクト
ル、100ｍＷ／cm2の強度光の照射下において、試
料の光導電率を測定し、得られた結果を第１図に
白丸印にて示す。 Spread a silicon nitride film on a quartz glass substrate to a thickness of approx.
Deposit to a thickness of 600 Å and deposit hydrogenated amorphous silicon on this silicon nitride film to a thickness of 5000 Å to 6000 Å.
It was deposited to a thickness of . A silicon nitride film was deposited to a thickness of about 600 Å on the thus prepared film without exposing it to the outside air, and a sample with a sandwich structure was created. After heat-treating this sample at 350℃, 400℃, 450℃ and 500℃ for 30 minutes in a hydrogen atmosphere, the photoconductivity of the sample was The obtained results are shown in FIG. 1 by white circles.
これらの試料についてひきつつぎAM1.5のス
ペクトル、100ｍＷ／cm2の強度の光を試料に１時
間照射して、その後の試料について光導電率を測
定し、得られた結果を黒丸にて示す。 For these samples, the spectrum of AM1.5 is irradiated with light with an intensity of 100 mW/cm 2 for 1 hour, and the photoconductivity of the samples thereafter is measured. The obtained results are shown in black circles. .
次に比較例として、石英ガラス基板上に、水素
化アモルフアスシリコン膜を約5000〜6000Åの厚
さで堆積させ、その後反応室内から試料を取り出
して、350℃、400℃、450℃および500℃において
水素雰囲気下30分間熱処理して、AM1.5スペク
トル100ｍＷ／cm2の光照射において試料の光電動
率を測定して、得られた結果を第２図に白丸にて
示す。これらの試料についてさらにひきつづき
AM1.5のスペクトル、100ｍＷ／cm2の強度の光を
１時間試料に照射した後、光導電率を測定して、
得られた結果を第２図に黒丸にて示す。 Next, as a comparative example, a hydrogenated amorphous silicon film was deposited to a thickness of about 5000 to 6000 Å on a quartz glass substrate, and then the sample was taken out from the reaction chamber and heated to 350°C, 400°C, 450°C and 500°C. The sample was heat-treated for 30 minutes in a hydrogen atmosphere, and the photoelectric efficiency of the sample was measured under irradiation with light of 100 mW/cm 2 in the AM1.5 spectrum. The obtained results are shown as white circles in FIG. More on these samples
After irradiating the sample with AM1.5 spectrum and light with an intensity of 100 mW/cm 2 for 1 hour, the photoconductivity was measured.
The obtained results are shown in FIG. 2 by black circles.
ここで第１図と第２図において250℃のデータ
は、この基板温度において形成したままの光導電
率の値を示す。 Here, in FIGS. 1 and 2, the data at 250° C. indicate the photoconductivity value as formed at this substrate temperature.
第１図と第２図の実験データを比較すれば、明
らかなように、窒化シリコン膜で保護された本発
明によるアモルフアスシリコン系膜は、熱処理を
しない状態で従来法によるアモルフアスシリコン
膜より光導電率が大きく、光照射による劣化が少
ない。 Comparing the experimental data in Figures 1 and 2, it is clear that the amorphous silicon film of the present invention protected by a silicon nitride film is superior to the amorphous silicon film of the conventional method without heat treatment. High photoconductivity and little deterioration due to light irradiation.
さらに500℃未満の熱処理においては、熱処理
を行うことによつて光照射に安定でしかも光導電
率の大きい膜が得られる。 Furthermore, in heat treatment at less than 500° C., a film that is stable to light irradiation and has high photoconductivity can be obtained by performing the heat treatment.
第１図と第２図において、450℃で熱処理した
膜は光導電率の変化が少なく、安定な膜であるの
で、それらの膜について熱処理前後の光学ギヤツ
プEgoptの比を測定し、得られた結果を第３図に
示す。第３図において■印で示した値は窒化シリ
コン膜を用いて水素化アモルフアスシリコン膜を
サンドイツチ構造した試料の光学ギヤツプ比を示
し、□印は水素化アモルフアスシリコンの光学ギ
ヤツプの変化比を示した。 In Figures 1 and 2, the films heat-treated at 450°C show little change in photoconductivity and are stable films, so the ratio of the optical gap Egopt before and after heat treatment was measured for these films. The results are shown in Figure 3. In Fig. 3, the values marked with ■ indicate the optical gap ratio of the sample in which the hydrogenated amorphous silicon film has a sandwich structure using silicon nitride film, and the value marked with □ indicates the change ratio of the optical gap of hydrogenated amorphous silicon. Indicated.
ここで、第３図のデータを見るとサンドイツチ
構造の試料の光学ギヤツプの変化比は１に近く、
光学ギヤツプの値の変化が小さく、光学特性の安
定度が良好である。 Here, looking at the data in Figure 3, the change ratio of the optical gap for the sample with the Sanderch structure is close to 1.
The change in optical gap value is small, and the stability of optical characteristics is good.
アモルフアスシリコン系膜に電極等の電気接触
を設けるためには、アモルフアスシリコン系膜の
上に堆積した高抵抗の窒化シリコン系膜を一部除
去して使用する。 In order to provide electrical contacts such as electrodes to the amorphous silicon film, a portion of the high resistance silicon nitride film deposited on the amorphous silicon film is removed.
［発明の効果］
以上説明したように、本発明によれば、アモル
フアスシリコン系膜を窒化シリコン系膜に挟んで
サンドイツチ構造とすることにより、アモルフア
スシリコン膜は外気にさらされることなく保護さ
せるので、光導電率が高く、光学ギヤツプの変化
の小さい薄膜を得ることができる。従つて、光劣
化をおさえ、光電特性の良好な薄膜を得ることが
できる。[Effects of the Invention] As explained above, according to the present invention, by sandwiching an amorphous silicon film between silicon nitride films to form a sandwich structure, the amorphous silicon film can be protected without being exposed to the outside air. Therefore, a thin film with high photoconductivity and small change in optical gap can be obtained. Therefore, it is possible to suppress photodeterioration and obtain a thin film with good photoelectric properties.
アモルフアスシリコン系膜は、光センサ、太陽
電池等の光電変換素子に適用することができる。 Amorphous silicon-based films can be applied to photoelectric conversion elements such as optical sensors and solar cells.
第１図は本発明の薄膜形成方法によつて作成し
た薄膜の光導電率と熱処理温度との関係の一例を
示す特性図、第２図は水素化アモルフアスシリコ
ン薄膜の光導電率と熱処理温度との関係の一例を
示す特性図、第３図は熱処理前後の光学ギヤツプ
の変化比を示す特性図である。
Fig. 1 is a characteristic diagram showing an example of the relationship between the photoconductivity and heat treatment temperature of a thin film created by the thin film forming method of the present invention, and Fig. 2 is a characteristic diagram showing an example of the relationship between the photoconductivity and heat treatment temperature of a hydrogenated amorphous silicon thin film. FIG. 3 is a characteristic diagram showing an example of the relationship between .
Claims (1)
該第１の窒化シリコン系膜の上にアモルフアスシ
リコン系膜を堆積し、外気に露すことなく、該ア
モルフアスシリコン系膜上に第２の窒化シリコン
系膜を堆積することを特徴とする薄膜形成方法。 ２ 基板上に第１の窒化シリコン系膜を堆積し、
該第１の窒化シリコン系膜の上にアモルフアスシ
リコン系膜を堆積し、第２の窒化シリコン系膜を
堆積し、得られた膜に熱処理を施すことを特徴と
する薄膜形成方法。[Claims] 1. Depositing a first silicon nitride film on a substrate,
An amorphous silicon-based film is deposited on the first silicon nitride-based film, and a second silicon nitride-based film is deposited on the amorphous silicon-based film without exposure to the outside air. Thin film formation method. 2 Depositing a first silicon nitride film on the substrate,
A method for forming a thin film, comprising depositing an amorphous silicon film on the first silicon nitride film, depositing a second silicon nitride film, and subjecting the obtained film to heat treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63134140A JPH01303716A (en) | 1988-05-31 | 1988-05-31 | Thin film formation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63134140A JPH01303716A (en) | 1988-05-31 | 1988-05-31 | Thin film formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01303716A JPH01303716A (en) | 1989-12-07 |
| JPH0573334B2 true JPH0573334B2 (en) | 1993-10-14 |
Family
ID=15121408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63134140A Granted JPH01303716A (en) | 1988-05-31 | 1988-05-31 | Thin film formation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01303716A (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102560A (en) * | 1981-12-14 | 1983-06-18 | Fujitsu Ltd | Manufacture of thin film transistor |
| JPH0652741B2 (en) * | 1982-06-02 | 1994-07-06 | 松下電器産業株式会社 | Method for manufacturing insulated gate transistor |
| JPS5919378A (en) * | 1982-07-23 | 1984-01-31 | Matsushita Electric Ind Co Ltd | Insulated gate type transistor and manufacture thereof |
| JPS617669A (en) * | 1984-06-21 | 1986-01-14 | Matsushita Electric Ind Co Ltd | Manufacture of photoconductor |
| JPS6254478A (en) * | 1985-08-24 | 1987-03-10 | Semiconductor Energy Lab Co Ltd | Optoelectric transducer |
| JPS6411368A (en) * | 1987-07-03 | 1989-01-13 | Nec Corp | Manufacture of thin film transistor |
-
1988
- 1988-05-31 JP JP63134140A patent/JPH01303716A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01303716A (en) | 1989-12-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |