JPH0580779B2 - - Google Patents
Info
- Publication number
- JPH0580779B2 JPH0580779B2 JP60197654A JP19765485A JPH0580779B2 JP H0580779 B2 JPH0580779 B2 JP H0580779B2 JP 60197654 A JP60197654 A JP 60197654A JP 19765485 A JP19765485 A JP 19765485A JP H0580779 B2 JPH0580779 B2 JP H0580779B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- focusing
- electrode
- electrostatic
- vacuum tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、撮像管に適用して超高解像度特性が
得られる陰極線管に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a cathode ray tube that can be applied to an image pickup tube to obtain ultra-high resolution characteristics.
従来、電磁集束・静電偏向方式の撮像管が知ら
れている。この電子光学系は原理的には偏向収差
が小さく解像度の均一性に優れている。(例えば
特開昭60―100343号公報を参照のこと)しかしな
がら、この電子光学系では原理的な結像倍率が1
になるため、超高解像度を目的として結像倍率を
縮小化することは困難である。
Conventionally, electromagnetic focusing/electrostatic deflection type image pickup tubes are known. In principle, this electron optical system has small deflection aberration and excellent uniformity of resolution. (For example, see Japanese Patent Application Laid-open No. 100343/1983.) However, in this electron optical system, the principle imaging magnification is 1.
Therefore, it is difficult to reduce the imaging magnification for the purpose of ultra-high resolution.
一方、電子ビームを2度結像させることにより
結像倍率を縮小化し高解像度を達成した例がテレ
ビジヨン学会誌vol.37、No.9(1983)に掲載され
ている。しかしながら、この従来技術では、電磁
集束・電磁偏向方式の電子光学系を基本としてい
るために結像倍率は0.4程度に留まり、又、偏向
収差の増大も抑えることができないという問題が
ある。 On the other hand, an example of achieving high resolution by reducing the imaging magnification by imaging an electron beam twice is published in the Journal of the Television Society, Vol. 37, No. 9 (1983). However, since this conventional technique is based on an electromagnetic focusing/electromagnetic deflection type electron optical system, the imaging magnification remains at about 0.4, and there are also problems in that an increase in deflection aberration cannot be suppressed.
本発明の目的は、結像倍率を大幅に縮小し、超
高解像度で偏向収差のきわめて小さな陰極線管を
提供することにある。
An object of the present invention is to provide a cathode ray tube that has extremely reduced imaging magnification, has ultra-high resolution, and has extremely small deflection aberrations.
本発明は、上記目的を達成するため、電磁集
束・静電偏向方式に静電集束部を付加し、2ルー
プ電子ビームにより結像倍率を縮小し同時に偏向
収差も小さく抑えた電子光学系を実現したもので
ある。
In order to achieve the above object, the present invention adds an electrostatic focusing section to the electromagnetic focusing/electrostatic deflection method, and realizes an electron optical system that uses a two-loop electron beam to reduce the imaging magnification and at the same time minimizes deflection aberration. This is what I did.
以下、第1図を参照しながら本発明の一実施例
を説明する。本実施例は高解像度撮像管に適用し
た例である。
An embodiment of the present invention will be described below with reference to FIG. This embodiment is an example in which the present invention is applied to a high-resolution image pickup tube.
第1図において、1は真空外管、2及び3は電
子ビーム発生部を構成する陰極、加速電極、4は
光導電膜ターゲツト、5は外管の内壁面に形成さ
れた静電偏向電極、6は偏向を受けた電子ビーム
10を光導電膜ターゲツト、4にほぼ垂直に入射
させるコリメーシヨンレンズを形成するメツシユ
電極、7は電磁集束レンズを形成するソレノイド
コイル、8,81,82は節電集束レンズを形成
する円筒電極群、9はフエイスプレート、10は
電子ビームを示す。31は加速電極3に設けられ
たビーム制限開孔である。11は電子ビーム10
の第1結像点を示す。本実施例では電子ビーム発
生部に2極形電子銃を使用しており、加速電極に
は10〜数10Vの正電圧が印加される。偏向電極5
は水平・垂直方向の偏向電界を発生するための4
個のジグザグパターン電極であり、数100Vの直
流電圧に偏向電圧が畳重される。メツシユ電極6
には300〜1000V程度の高電圧が印加される。ビ
ーム制限開孔31から出射したビーム10は、静
電集束レンズ部8の出口近傍で一度結像し第1結
像点11を作る。この結像点はソレノイドコイル
7の形成する電磁集束レンズによりターゲツト4
上に再結像される。 In FIG. 1, 1 is a vacuum outer tube, 2 and 3 are cathodes and accelerating electrodes constituting an electron beam generating section, 4 is a photoconductive film target, 5 is an electrostatic deflection electrode formed on the inner wall surface of the outer tube, 6 is a mesh electrode that forms a collimation lens that allows the deflected electron beam 10 to be incident almost perpendicularly onto the photoconductive film target 4; 7 is a solenoid coil that forms an electromagnetic focusing lens; 8, 81, and 82 are power saving devices. A cylindrical electrode group forming a focusing lens, 9 a face plate, and 10 an electron beam. 31 is a beam limiting aperture provided in the accelerating electrode 3. 11 is the electron beam 10
The first image point is shown. In this embodiment, a bipolar electron gun is used in the electron beam generating section, and a positive voltage of 10 to several tens of volts is applied to the accelerating electrode. Deflection electrode 5
is 4 to generate horizontal and vertical deflection electric fields.
The deflection voltage is superimposed on a DC voltage of several hundred volts. mesh electrode 6
A high voltage of about 300 to 1000V is applied to the The beam 10 emitted from the beam limiting aperture 31 is once imaged near the exit of the electrostatic focusing lens section 8 to form a first imaged point 11 . This imaging point is focused on the target 4 by an electromagnetic focusing lens formed by the solenoid coil 7.
re-imaged on top.
第2図に本実施例を詳細に示す。静電収束部8
は2個の円筒電極81,82で構成され、円筒電
極81,82の内径は7.2mm、各電極長は81が
12mm、82が6mmであり、第1の円筒電極81の
長さは内径の約2倍に、第2の円筒電極82の長
さは内径の約1倍に設定される。又、電極81に
は100〜2000Vの高電圧が、電極82には数10〜
0Vの低電圧が印加される。 FIG. 2 shows this embodiment in detail. Electrostatic focusing section 8
is composed of two cylindrical electrodes 81, 82, the inner diameter of the cylindrical electrodes 81, 82 is 7.2 mm, and the length of each electrode is 81.
The length of the first cylindrical electrode 81 is set to be about twice the inner diameter, and the length of the second cylindrical electrode 82 is set to about one time the inner diameter. In addition, a high voltage of 100 to 2000V is applied to the electrode 81, and a voltage of several tens to 2000V is applied to the electrode 82.
A low voltage of 0V is applied.
又、偏向電極5の直径は16mm、ピツチ4.5mmの
カーブドアローパターンが16ピツチ形成されてお
り、パターン電極には90゜のツイストが加えられ
ている。ビーム制限開孔31からメツシユ電極6
での長さは76mm、ソエノイドコイル7の長さは57
mmで中心がビーム制限開孔から45mmの位置に設置
される。 Further, the deflection electrode 5 has a diameter of 16 mm and a curved arrow pattern of 16 pitches with a pitch of 4.5 mm, and a 90° twist is added to the pattern electrode. From the beam limiting aperture 31 to the mesh electrode 6
The length is 76mm, and the length of soenoid coil 7 is 57mm.
mm and the center is placed 45mm from the beam limiting aperture.
第2図には軸上の磁界強度Bと電位Vの分布を
示してある。加速電極3は20V、円筒電極81,
82は各々500V、0V、偏向電極5の直流電圧は
550V、メツシユ電極6は1000Vの場合である。
11はこの場合での電子ビームの第1結像点を示
すが、電位Vが増加する位置に第1結像点が存在
することが分る。 FIG. 2 shows the distribution of magnetic field strength B and potential V on the axis. Accelerating electrode 3 is 20V, cylindrical electrode 81,
82 are respectively 500V and 0V, and the DC voltage of the deflection electrode 5 is
The voltage is 550V, and the mesh electrode 6 is 1000V.
11 indicates the first imaging point of the electron beam in this case, and it can be seen that the first imaging point exists at a position where the potential V increases.
第3図、第4図には、静電集束部の第1円筒電
極81の電圧V81を変えた時のビーム特性を示
す。第2円筒電極82は0Vに固定している。第
3図において、結像倍率MはV81に比例して縮小
されV81が200Vでは約0.2となつている。静電集
束部を持たない従来の単一ループ方式での結像倍
率は0.445であり、本実施例では従来例の約1/2程
度の縮小倍率が得られ、極めて細いビームスポツ
トが得られる。 3 and 4 show beam characteristics when the voltage V 81 of the first cylindrical electrode 81 of the electrostatic focusing section is changed. The second cylindrical electrode 82 is fixed at 0V. In FIG. 3, the imaging magnification M is reduced in proportion to V 81 and is approximately 0.2 when V 81 is 200V. The imaging magnification in a conventional single-loop system without an electrostatic focusing section is 0.445, and in this embodiment, a reduction magnification of about 1/2 of that of the conventional example is obtained, and an extremely narrow beam spot is obtained.
従来の電子光学系(ビームの集束・偏向系)で
は結像倍率の縮小と偏向特性(偏向時のスポツト
径や図形歪)は相反関係にあり、本実施例のよう
な極めて小さな倍率を持つ系では偏向特性は非実
用的な値に悪化してしまう。これに対し、本実施
例の偏向特性は良好であり、第3図に示す偏向ビ
ームスポツト径rはV81が100Vで従来例とほぼ同
等の17μmであり、V81が300V以上では10μm以
下の極めて小さな値になつている。又、第4図に
示すように、図形歪特性yは従来例が0.8%であ
るのに対し、本実施例ではV81に関係なく約0.1%
でありほとんど歪フリーの良好な特性を示してい
る。 In conventional electron optical systems (beam focusing/deflection systems), the reduction in imaging magnification and the deflection characteristics (spot diameter and shape distortion during deflection) are in a contradictory relationship. In this case, the deflection characteristics deteriorate to impractical values. On the other hand, the deflection characteristics of this example are good, and the deflection beam spot diameter r shown in FIG. It has become an extremely small value. Furthermore, as shown in Fig. 4, the figure distortion characteristic y is 0.8% in the conventional example, whereas in this example it is approximately 0.1% regardless of V81 .
It shows good characteristics with almost no distortion.
第4図には電子ビームの第1結像点位置xを示
してある。これは第2図において点11の位置を
円筒電極82の出口側先端から測ったものであ
り、1.5mm〜3.5mmの位置に第1結像点が来てお
り、軸上電位が増加する(加速電界)領域に第1
結像点が形成されていることがわかる。 FIG. 4 shows the position x of the first imaging point of the electron beam. This is the position of point 11 in Fig. 2 measured from the exit side tip of the cylindrical electrode 82, and the first imaging point is at a position of 1.5 mm to 3.5 mm, and the axial potential increases ( Accelerating electric field)
It can be seen that an imaged point is formed.
第5図には本発明の他の実施例を示す。他の実
施例においては、静電集束部8の構造が異なり、
他の部分は第1図に示した実施例と同一のため省
略する。第5図イは第2円筒電極の出口側の径を
小さくしたものであり、例えば内径を3mmとし
た。第1円筒電極81の電圧V81を300〜1000V、
第2円筒電極83を0Vとすると、結像倍率Mは
0.16〜0.21、偏向ビームスポツト径rは15〜12μ
m、図形歪yは0.13〜0.11%と良好な特性が得ら
れる。 FIG. 5 shows another embodiment of the invention. In other embodiments, the structure of the electrostatic focusing section 8 is different,
The other parts are the same as the embodiment shown in FIG. 1, and therefore will be omitted. In FIG. 5A, the diameter of the second cylindrical electrode on the exit side is reduced, for example, the inner diameter is set to 3 mm. The voltage V81 of the first cylindrical electrode 81 is 300 to 1000V,
When the second cylindrical electrode 83 is set to 0V, the imaging magnification M is
0.16~0.21, deflection beam spot diameter r is 15~12μ
Good characteristics are obtained with m and figure distortion y of 0.13 to 0.11%.
第5図ロは第2円筒電極の入口側の径を小さく
したものであり、例えば内径を3mmとした。第1
円筒電極81の電圧V81を300〜1000V、第2円筒
電極84を0Vとすると、結像倍率Mは0.22〜
0.25、偏向ビームスポツト径rは14〜8μm、図形
歪yは0.12〜0.10%と良好な特性が得られる。 In FIG. 5B, the diameter of the second cylindrical electrode on the inlet side is reduced, for example, the inner diameter is set to 3 mm. 1st
When the voltage V 81 of the cylindrical electrode 81 is 300 to 1000 V and the second cylindrical electrode 84 is 0 V, the imaging magnification M is 0.22 to 1000 V.
0.25, the deflection beam spot diameter r is 14 to 8 μm, and the figure distortion y is 0.12 to 0.10%, so good characteristics can be obtained.
第5図ハは真空外管1の内壁面に静電集束部8
を形成した例である。85が第1円筒電極、86
が第2円筒電極である。 FIG. 5C shows an electrostatic focusing section 8 on the inner wall surface of the vacuum outer tube 1.
This is an example of forming a . 85 is the first cylindrical electrode, 86
is the second cylindrical electrode.
第5図ニは真空外管1の内壁面に第2円筒電極
87を形成した例である。 FIG. 5D shows an example in which a second cylindrical electrode 87 is formed on the inner wall surface of the vacuum outer tube 1.
尚、本発明の実施例では電子ビーム発生部とし
て陰極2と加速電極3とで構成される2極形電子
銃を利用したが、陰極、制御電極及び加速電極で
構成される3極形電子銃を利用しても良い。ま
た、上述実施例は、本発明を撮像管に適用した例
であるが、本発明はこれに限らず、蓄積管、スキ
ヤンコンバータ等の陰極線管に同様に適用するこ
とができる。 In the embodiment of the present invention, a bipolar electron gun consisting of a cathode 2 and an accelerating electrode 3 was used as the electron beam generating section, but a triode electron gun consisting of a cathode, a control electrode and an accelerating electrode was used. You may also use Furthermore, although the above embodiment is an example in which the present invention is applied to an image pickup tube, the present invention is not limited thereto, and can be similarly applied to cathode ray tubes such as storage tubes and scan converters.
以上述べたように本発明によれば良好な偏向ビ
ーム特性を維持しつつ極めて小さな値に結像倍率
を縮小することができる超高解像度な陰極線管を
実現できる。
As described above, according to the present invention, it is possible to realize an ultra-high resolution cathode ray tube that can reduce the imaging magnification to an extremely small value while maintaining good deflection beam characteristics.
第1図は本発明の実施例を説明するための断面
図、第2図〜第4図は第1図の実施例の特性を示
す図、第5図は本発明の他の実施例を示す図であ
る。
符号の説明、1……真空外管、2……陰極、3
……加速電極、4……光導電膜ターゲツト、5…
…偏向電極、6……メツシユ電極、7……ソレノ
イドコイル、8……静電集束部、9……フエイス
プレート、10……電子ビーム、11……電子ビ
ームの第1結像点。
Fig. 1 is a sectional view for explaining an embodiment of the present invention, Figs. 2 to 4 are diagrams showing characteristics of the embodiment of Fig. 1, and Fig. 5 shows another embodiment of the invention. It is a diagram. Explanation of symbols, 1... Vacuum outer tube, 2... Cathode, 3
... Accelerating electrode, 4... Photoconductive film target, 5...
... Deflection electrode, 6 ... Mesh electrode, 7 ... Solenoid coil, 8 ... Electrostatic focusing section, 9 ... Face plate, 10 ... Electron beam, 11 ... First imaging point of electron beam.
Claims (1)
解像度特性を得るための陰極線管であつて、上記
電子ビームを発生させるための電子ビーム発生手
段を一端に備えた真空管と、該真空管の他端に設
けられ上記電子ビームによつて走査されるターゲ
ツトと、上記電子ビーム発生手段の上記ターゲツ
ト側の領域に設けられ、上記電子ビーム発生手段
で形成される物点を結像させ第1結像点をつくる
ための静電集束手段と、上記真空管を包囲して設
けられ上記第1結像点から発散した電子ビームを
集束するための磁界を発生する電磁集束手段と、
上記真空管の内面に設けられ上記第1結像点から
発散した電子ビームを偏向するために所定の印加
直流電圧によつて電界を発生し、上記電磁集束手
段と共に上記電子ビームを上記ターゲツト上に再
結像するための静電偏向手段とから構成され、上
記静電集束手段を、上記電子ビーム発生手段側に
設けられ所定の第1印加電圧を与えられた第1の
電極と上記ターゲツト側に設けられ上記第1の印
加電圧及び上記印加直流電圧より低い第2の印加
電圧を与えられた第2の電極とから構成すること
によつて、上記第1の結像点が上記静電集束手段
の出口近傍における管軸上電位が増加する加速電
界領域の位置で結像するようにしたことを特徴と
する陰極線管。 2 前記電磁集束手段は前記真空管の外部に設け
た電磁コイルであり、前記静電偏向手段は上記真
空管の内壁面に形成されたジグザグパターン電極
群で構成されたことを特徴とする特許請求の範囲
第1項記載の陰極線管。[Scope of Claims] 1. A cathode ray tube for obtaining high resolution characteristics by imaging an electron beam twice, the vacuum tube having at one end an electron beam generating means for generating the electron beam. and a target provided at the other end of the vacuum tube and scanned by the electron beam, and an object point provided in a region on the target side of the electron beam generating means and formed by the electron beam generating means. an electrostatic focusing means for imaging and creating a first focusing point; an electromagnetic focusing means provided surrounding the vacuum tube and generating a magnetic field for focusing the electron beam diverged from the first focusing point;
An electric field is generated by a predetermined applied DC voltage provided on the inner surface of the vacuum tube to deflect the electron beam diverged from the first imaging point, and together with the electromagnetic focusing means, the electron beam is redirected onto the target. an electrostatic deflection means for forming an image, and the electrostatic focusing means is provided on the side of the electron beam generating means and a first electrode to which a predetermined first applied voltage is applied, and the electrostatic focusing means is provided on the side of the target. and a second electrode to which a second applied voltage lower than the applied DC voltage is applied, so that the first imaging point of the electrostatic focusing means is A cathode ray tube characterized in that an image is formed at a position of an accelerating electric field region where a potential on the axis of the tube increases in the vicinity of an exit. 2. Claims characterized in that the electromagnetic focusing means is an electromagnetic coil provided outside the vacuum tube, and the electrostatic deflection means is comprised of a zigzag pattern electrode group formed on the inner wall surface of the vacuum tube. The cathode ray tube according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19765485A JPS6258551A (en) | 1985-09-09 | 1985-09-09 | Cathode-ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19765485A JPS6258551A (en) | 1985-09-09 | 1985-09-09 | Cathode-ray tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6258551A JPS6258551A (en) | 1987-03-14 |
| JPH0580779B2 true JPH0580779B2 (en) | 1993-11-10 |
Family
ID=16378092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19765485A Granted JPS6258551A (en) | 1985-09-09 | 1985-09-09 | Cathode-ray tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6258551A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59105764U (en) * | 1983-01-04 | 1984-07-16 | 松下電器産業株式会社 | Image tube device |
-
1985
- 1985-09-09 JP JP19765485A patent/JPS6258551A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258551A (en) | 1987-03-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6339300B2 (en) | Color cathode ray tube with a reduced dynamic focus voltage for an electrostatic quadrupole lens thereof | |
| JPH0580779B2 (en) | ||
| JPH02276138A (en) | Picture display device | |
| JPS62188138A (en) | Color picture tube device | |
| JPH1092332A (en) | Electron gun for color cathode ray tube | |
| US4713588A (en) | Image pickup tube | |
| US4368405A (en) | Electron gun for a cathode ray tube | |
| US4560899A (en) | Electron beam focusing lens | |
| JPH01258346A (en) | Electron gun for cathode-ray tube | |
| KR860000816B1 (en) | Electron gun for television camera tube | |
| US6831400B2 (en) | Color cathode ray tube apparatus having auxiliary magnetic field generator | |
| US6965192B2 (en) | Color picture tube apparatus | |
| JPS62268045A (en) | Multiple beam crt | |
| US4866337A (en) | Image pick-up tube with electrostatic deflecting electrode structure | |
| JPH0237651A (en) | Electron gun | |
| US7122977B2 (en) | Cathode-ray tube apparatus | |
| Gleichauf | A high-resolution electron gun for thermoplastic recording using prefocus deflection | |
| US20050001552A1 (en) | Cathode-ray tube | |
| JPS6258550A (en) | Cathode-ray tube | |
| JPS62285351A (en) | Cathode ray tube | |
| Kurashige et al. | A magnetic focus electrostatic deflection compact camera tube | |
| JPH0658792B2 (en) | Electron tube | |
| JP3074179B2 (en) | Cathode ray tube | |
| JPH08106861A (en) | Color picture tube | |
| JPH043057B2 (en) |