JPH0583179B2 - - Google Patents
Info
- Publication number
- JPH0583179B2 JPH0583179B2 JP62248313A JP24831387A JPH0583179B2 JP H0583179 B2 JPH0583179 B2 JP H0583179B2 JP 62248313 A JP62248313 A JP 62248313A JP 24831387 A JP24831387 A JP 24831387A JP H0583179 B2 JPH0583179 B2 JP H0583179B2
- Authority
- JP
- Japan
- Prior art keywords
- ring
- insulating film
- junction
- shottock
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
Landscapes
- Wire Bonding (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に関し、特にシヨツトキダ
イオードの品質向上に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor devices, and particularly to improving the quality of Schottky diodes.
従来、シヨツトキダイオードは第３図の断面図
に示すように、半導体基板１の絶縁膜２に円形の
窓をあけ、この窓内にシヨツトキ接合形成金属を
被着して円形のシヨツトキ接合６を形成し、シヨ
ツトキ接合形成金属の上に電極７を形成してなる
か、または、第４図の断面図に示すように、円状
にシヨツトキ接合６を形成し、円の外側の絶縁膜
の上に電極８を引き出した構造となつていた。
Conventionally, as shown in the cross-sectional view of FIG. 3, a Schottky diode has a circular window formed in the insulating film 2 of a semiconductor substrate 1, and a Schottky junction-forming metal is deposited within this window to form a circular Schottky junction 6. Alternatively, as shown in the cross-sectional view of FIG. 4, a circular shot junction 6 is formed and the electrode 7 is formed on the insulating film outside the circle. It had a structure in which the electrode 8 was pulled out.
上述した第３図に示す従来のシヨツトキダイオ
ードは、シヨツトキ接合上に電極があるため、ボ
ンデイング時にシヨツトキ接合にストレスが加わ
り、シヨツトキダイオードを劣化させる欠点があ
る。また、第４図に示す従来のシヨツトキダイオ
ードは、第３図に示すシヨツトキダイオードの欠
点をなくするために引き出し電極構造にし、シヨ
ツトキ接合の外側に電極を有している構造になつ
ている。しかし、この構造では、引き出し電極が
浮遊容量となり高周波で使用するには特性が劣化
する欠点がある。
The conventional shottock diode shown in FIG. 3 described above has an electrode on the shottock junction, so stress is applied to the shottock junction during bonding, resulting in deterioration of the shottock diode. Furthermore, in order to eliminate the drawbacks of the shottock diode shown in Fig. 3, the conventional shottock diode shown in Fig. 4 has an extraction electrode structure and has an electrode outside the shottock junction. . However, this structure has the disadvantage that the extraction electrode becomes a stray capacitance and the characteristics deteriorate when used at high frequencies.
上記問題点に対し本発明のシヨツトキダイオー
ドは、リング状に形成されたシヨツトキ接合と、
そのリングに囲まれた絶縁膜上に、前記シヨツト
キ接合形成金属と接続して形成されている電極金
属とを有している。
In order to solve the above problems, the shot diode of the present invention has a shot junction formed in a ring shape,
An electrode metal is formed on the insulating film surrounded by the ring to be connected to the shot junction forming metal.
つぎに本発明を実施例により説明する。 Next, the present invention will be explained by examples.
第１図は本発明の一実施例の断面図である。第
１図において、半導体基板１上に絶縁膜２が形成
され、この絶縁膜２にリング状に窓があけられ
て、この窓に露出した半導体基板にシヨツトキ形
成金属が被着されてリング状のシヨツトキ接合３
が形成されている。さらにリング３に囲まれた絶
縁膜２上およびリング３の外側にかけて、リング
状のシヨツトキ形成金属と接続している電極金属
４が形成されている。 FIG. 1 is a sectional view of an embodiment of the present invention. In FIG. 1, an insulating film 2 is formed on a semiconductor substrate 1, a ring-shaped window is formed in the insulating film 2, and a shot-forming metal is deposited on the semiconductor substrate exposed in the window to form a ring-shaped window. Short joint 3
is formed. Further, on the insulating film 2 surrounded by the ring 3 and on the outside of the ring 3, an electrode metal 4 is formed which is connected to the ring-shaped shot hole forming metal.
本例では、第１図の従来例と同じシヨツトキ接
合面積、同じ電極面積とすることにより、同じ電
気的特性のシヨツトキダイオードが得られるのに
加えて、電極金属のボンデイング部をリングの内
側の絶縁膜上にとれるので、ボンデイング時のス
トレスを受けず、シヨツトキ接合の劣化がなくな
る。 In this example, by using the same shot junction area and the same electrode area as the conventional example shown in Fig. 1, a shot diode with the same electrical characteristics can be obtained. Since it can be formed on the insulating film, it is not subjected to stress during bonding and deterioration of the shot bonding is eliminated.
第２図は本発明の実施例２の断面図である。こ
の実施例では、リング状のシヨツトキ接合形成金
属と接続した電極金属５は、リング３に囲まれた
絶縁膜２の上にのみ形成されている。この実施例
ではリング状のシヨツトキ接合の形状を自由に変
えることができる。 FIG. 2 is a sectional view of Example 2 of the present invention. In this embodiment, the electrode metal 5 connected to the ring-shaped shot junction forming metal is formed only on the insulating film 2 surrounded by the ring 3. In this embodiment, the shape of the ring-shaped shot joint can be freely changed.
以上説明したように本発明は、シヨツトキ接合
をリング状に形成し、その内と外に絶縁膜を作
り、リングの内側の絶縁膜とシヨツトキ接合の外
の絶縁膜の一部に電極を作ることにより、特性を
変えることなくボンデイング時のストレスによる
劣化をなくしたシヨツトキダイオードが得られ
る。
As explained above, the present invention involves forming a Schottky junction in a ring shape, forming an insulating film on the inside and outside of the ring, and forming an electrode on the insulating film inside the ring and a part of the insulating film outside the Schottky junction. As a result, it is possible to obtain a shotgun diode that eliminates deterioration due to stress during bonding without changing its characteristics.
第１図は本発明の一実施例の断面図、第２図は
本発明の他の実施例の断面図、第３図および第４
図はそれぞれ従来のシヨツトキダイオードの一例
および他の例の断面図である。
１……半導体基板、２……絶縁膜、３，６……
シヨツトキ接合、４，５，７，８……電極金属。
FIG. 1 is a cross-sectional view of one embodiment of the present invention, FIG. 2 is a cross-sectional view of another embodiment of the present invention, and FIGS.
The figures are cross-sectional views of one example and another example of a conventional Schottky diode, respectively. 1... Semiconductor substrate, 2... Insulating film, 3, 6...
Short joint, 4, 5, 7, 8...electrode metal.
Claims (1)
られ、この窓に露出された前記半導体基板面にシ
ヨツトキ接合形成金属を被着してリング状にシヨ
ツトキ接合が形成され、さらに前記リングに囲ま
れた絶縁膜上に前記シヨツトキ接合形成金属と接
続している電極金属が形成されていることを特徴
とするシヨツトキダイオード。1. A ring-shaped window is opened in an insulating film on a semiconductor substrate, and a shottock junction forming metal is deposited on the surface of the semiconductor substrate exposed through the window to form a ring-shaped shottock junction, and further surrounded by the ring. A Schottky diode, characterized in that an electrode metal connected to the Schottky junction forming metal is formed on the insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62248313A JPS6489527A (en) | 1987-09-30 | 1987-09-30 | Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62248313A JPS6489527A (en) | 1987-09-30 | 1987-09-30 | Schottky diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6489527A JPS6489527A (en) | 1989-04-04 |
| JPH0583179B2 true JPH0583179B2 (en) | 1993-11-25 |
Family
ID=17176216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62248313A Granted JPS6489527A (en) | 1987-09-30 | 1987-09-30 | Schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6489527A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2984060B2 (en) * | 1994-09-01 | 1999-11-29 | センサレー・コーポレーション | Temperature measurement board |
| JP2003007976A (en) * | 2001-06-25 | 2003-01-10 | Mitsubishi Electric Corp | Semiconductor device and module device |
| DE102017103111B4 (en) | 2017-02-16 | 2025-03-13 | Semikron Elektronik Gmbh & Co. Kg | Semiconductor diode and electronic circuit arrangement herewith |
| CN113196502B (en) * | 2018-12-27 | 2024-11-19 | 京瓷株式会社 | Series diode, circuit and electrical device |
| WO2020137933A1 (en) * | 2018-12-27 | 2020-07-02 | 京セラ株式会社 | Electrical circuit and electrical device |
-
1987
- 1987-09-30 JP JP62248313A patent/JPS6489527A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6489527A (en) | 1989-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0583179B2 (en) | ||
| US3706128A (en) | Surface barrier diode having a hypersensitive n region forming a hypersensitive voltage variable capacitor | |
| JPS63288062A (en) | Beam lead type diode | |
| JPS61166528U (en) | ||
| JPH0518259B2 (en) | ||
| JPH0345641U (en) | ||
| JPS6482652A (en) | Manufacture of semiconductor device | |
| JPS5918687Y2 (en) | semiconductor equipment | |
| JPS58222544A (en) | Electronic parts and preparation thereof | |
| JPS6020926Y2 (en) | Plate-shaped through-hole ceramic capacitor | |
| JP2606414B2 (en) | Method for manufacturing semiconductor device | |
| JPS63157465A (en) | Schottky barrier diode | |
| JPS6099551U (en) | semiconductor equipment | |
| JPS6016568U (en) | photovoltaic device | |
| JPH01169045U (en) | ||
| JPS5813033B2 (en) | semiconductor radiation detector | |
| JPH0361343U (en) | ||
| JPS55138860A (en) | Semiconductor device | |
| JPH0310530U (en) | ||
| JPH03115407U (en) | ||
| JPH0371661U (en) | ||
| JPS6395244U (en) | ||
| JPH0367430U (en) | ||
| JPH02310972A (en) | Semiconductor device | |
| JPS6439659U (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |