JPH06103672B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH06103672B2 JPH06103672B2 JP62027868A JP2786887A JPH06103672B2 JP H06103672 B2 JPH06103672 B2 JP H06103672B2 JP 62027868 A JP62027868 A JP 62027868A JP 2786887 A JP2786887 A JP 2786887A JP H06103672 B2 JPH06103672 B2 JP H06103672B2
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- semiconductor substrate
- vapor deposition
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 40
- 229910052782 aluminium Inorganic materials 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 30
- 238000007740 vapor deposition Methods 0.000 claims description 30
- 238000005245 sintering Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005019 vapor deposition process Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ この発明は、半導体装置の製造方法に関し、特に製造工
程を簡素化した半導体装置の製造方法に関するものであ
る。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device with a simplified manufacturing process.
［従来の技術］ 従来のこの種の半導体装置の製造方法においては、半導
体基板に対して前工程で所定の処理を行ない、その半導
体基板をアルミニュウム蒸着装置内の所定の位置にセッ
トする。[Prior Art] In a conventional method of manufacturing a semiconductor device of this type, a semiconductor substrate is subjected to a predetermined process in a previous step, and the semiconductor substrate is set at a predetermined position in an aluminum vapor deposition apparatus.
上記のアルミニュウム蒸着装置は、公知の構造であるた
め詳述および図示を省略するが、半導体基板、アルミニ
ュウム（A1）を蒸着するためのA1ソースの周囲を真空状
態にし、そのA1ソースを加熱・蒸発させ、所定の厚さの
アルミニュウムを半導体基板の表面に蒸着させる構造を
備えている。The aluminum vapor deposition apparatus described above has a known structure, so detailed description and illustrations thereof are omitted. However, the semiconductor substrate and the periphery of the A1 source for depositing aluminum (A1) are placed in a vacuum state, and the A1 source is heated and evaporated. Then, a structure for depositing aluminum of a predetermined thickness on the surface of the semiconductor substrate is provided.
上記の蒸着工程により所定の厚さのアルミニュウムが半
導体基板の表面に付着後、その半導体基板を蒸着装置内
から取出し、別個の工程によりアルミニュウムシンタ処
理を行なう。このアルミニュウムシンタ処理後には、半
導体基板上に他の金属を蒸着処理するために次工程に送
られる。After the aluminum having a predetermined thickness adheres to the surface of the semiconductor substrate by the above vapor deposition step, the semiconductor substrate is taken out from the vapor deposition apparatus, and aluminum sintering treatment is performed in a separate step. After this aluminum sintering process, it is sent to the next step for depositing another metal on the semiconductor substrate.
上記のアルミニュウム蒸着工程をさらに詳述すると、蒸
着装置内に半導体基板を設置した後の加熱温度として、
100〜200℃の範囲内の加熱温度を選定し、また、A1ソー
スを公知の手段で蒸発させるが、たとえば、半導体基板
の表面に0.5μｍ程度の厚さのアルミニュウム蒸着層を
形成する場合には約15〜20分の処理時間を要する。More specifically, the aluminum vapor deposition step described above, as the heating temperature after the semiconductor substrate is placed in the vapor deposition apparatus,
A heating temperature in the range of 100 to 200 ° C. is selected, and the A1 source is evaporated by a known means. For example, in the case of forming an aluminum vapor deposition layer having a thickness of about 0.5 μm on the surface of a semiconductor substrate, It takes about 15 to 20 minutes to process.
上記所定の膜厚のアルミニュウム蒸着層を形成した後、
蒸着装置内を大気圧に戻してから半導体基板を蒸着装置
外に取出し、別個の工程として不活性雰囲気中で400〜5
00℃に加熱し、アルミニュウムシンタ処理を行なう。After forming the aluminum vapor deposition layer of the predetermined thickness,
After returning the atmospheric pressure to the atmospheric pressure inside the vapor deposition equipment, remove the semiconductor substrate from the vapor deposition equipment and perform 400-5 in an inert atmosphere as a separate process.
Heat to 00 ℃ and perform aluminum sintering.
そして、通常はこのアルミニュウムシンタ処理後に、再
び上記の蒸着装置内に半導体基板を入れて上記アルミニ
ュウム蒸着層上に他の金属蒸着層を形成するようにして
いる。After the aluminum sintering process, the semiconductor substrate is usually put in the vapor deposition device again to form another metal vapor deposition layer on the aluminum vapor deposition layer.
［発明が解決しようとする問題点］ 従来のこの種の半導体装置の製造方法では、上記のよう
に、蒸着装置内に半導体基板をセットし、その後加熱・
蒸着し、当該蒸着装置から取出した後、今度はアルミニ
ュウムシンタ処理を別個の工程として行なわなければな
らず、製造工程が増加し、そのため半導体装置の製造原
価を上昇させる要因の一つとなっているという問題点が
あった。[Problems to be Solved by the Invention] In the conventional method for manufacturing a semiconductor device of this type, as described above, the semiconductor substrate is set in the vapor deposition device, and then the semiconductor substrate is heated.
After vapor deposition and taking it out of the vapor deposition apparatus, it is necessary to perform the aluminum sintering process as a separate process, which increases the number of manufacturing processes, which is one of the factors that increase the manufacturing cost of semiconductor devices. There was a problem.
［発明の目的］ この発明は、上記のような問題点を解消するためになさ
れたもので、アルミニュウム蒸着工程とアルミニュウム
シンタ処理工程とを一工程とし、半導体装置の製造工程
の簡素化を図り、工程数の減少により半導体装置の製造
原価を低減し得る半導体装置の製造方法を提供すること
を目的とするものである。[Object of the Invention] The present invention has been made in order to solve the above problems, and an aluminum vapor deposition step and an aluminum sintering process step as one step, to simplify the manufacturing process of the semiconductor device, An object of the present invention is to provide a semiconductor device manufacturing method capable of reducing the manufacturing cost of the semiconductor device by reducing the number of steps.
［問題点を解決するための手段］ この発明に係る半導体装置の製造方法は、半導体基板へ
のアルミニュウム蒸着時の温度を250〜300℃とし、当該
半導体基板を蒸着装置内にセットしたままで、アルミニ
ュウム蒸着工程とアルミニュウムシンタ工程とを一工程
で処理できるようにしたものである。[Means for Solving Problems] A method for manufacturing a semiconductor device according to the present invention is such that the temperature during aluminum vapor deposition on a semiconductor substrate is 250 to 300 ° C. and the semiconductor substrate is set in the vapor deposition device, The aluminum vapor deposition process and the aluminum sintering process can be processed in one process.
［作用］ この発明の半導体装置の製造方法においては、半導体基
板を250〜300℃の温度で加熱しつつ、アルミニュウムを
蒸着するので、当該アルミニュウム蒸着工程とアルミニ
ュウムシンタ工程とを一工程で処理することができ、半
導体装置の製造工程が簡素化され、そのため半導体装置
の製造原価を低減できるとともに、アルミニュウム蒸着
層の上にさらに他の金属を蒸着する場合にも半導体基板
の温度を上記温度に維持しておくため、半導体基板内へ
のアルミニュウムシンタが十分なされることになる。[Operation] In the method for manufacturing a semiconductor device of the present invention, since aluminum is vapor-deposited while heating the semiconductor substrate at a temperature of 250 to 300 ° C., the aluminum vapor deposition step and the aluminum sintering step must be processed in one step. Therefore, the manufacturing process of the semiconductor device can be simplified, the manufacturing cost of the semiconductor device can be reduced, and the temperature of the semiconductor substrate can be maintained at the above temperature even when another metal is vapor-deposited on the aluminum vapor deposition layer. Therefore, sufficient aluminum sintering is performed in the semiconductor substrate.
［実施例］ 以下に、この発明の一実施例を説明する。[Embodiment] An embodiment of the present invention will be described below.
まず、半導体基板の表面が前工程で十分洗浄されるもの
とする。First, it is assumed that the surface of the semiconductor substrate is thoroughly cleaned in the previous step.
次に、この半導体基板を蒸着装置内の所定の位置にセッ
トした後、その蒸着装置内を真空にし、加熱源により上
記半導体基板を250〜300℃に加熱する。Next, after setting this semiconductor substrate at a predetermined position in the vapor deposition apparatus, the inside of the vapor deposition apparatus is evacuated and the semiconductor substrate is heated to 250 to 300 ° C. by a heating source.
次に、蒸着装置内に設けられたアルミニュウムソースを
加熱し蒸発させて、半導体基板の表面に付着する。すな
わち、たとえば半導体基板の表面に0.5μｍ厚のアルミ
ニュウム蒸着層を形成する場合には、約15〜20分間の蒸
着処理を実施する。Next, the aluminum source provided in the vapor deposition apparatus is heated and evaporated to adhere to the surface of the semiconductor substrate. That is, for example, when forming a 0.5 μm thick aluminum vapor deposition layer on the surface of a semiconductor substrate, the vapor deposition process is performed for about 15 to 20 minutes.
次に、上記の工程により形成されたアルミニュウム蒸着
層上に、他の金属を蒸着させる場合にも、半導体基板を
加熱したままの状態で処理する。Next, even when another metal is vapor-deposited on the aluminum vapor-deposited layer formed by the above process, the semiconductor substrate is treated while being heated.
なお、この期間内においてもアルミニュウムのシンタ処
理が継続してなされているため、加熱温度自体も従来の
ように400〜500℃まで加熱する必要がなくなることとな
る。Since the aluminum sintering process is continued within this period, it is not necessary to heat the heating temperature itself to 400 to 500 ° C. as in the conventional case.
［発明の効果］ 以上のように、この発明によればアルミニュウム蒸着工
程とアルミニュウムシンタ工程とを同時に一工程で行な
うため、この種の半導体装置の製造工程が従来の製造工
程に比べ簡素化し、そのため半導体装置の製造原価を低
減し得るとともに、上記の処理工程により形成されたア
ルミニュウム蒸着層上に他の金属層を形成する場合にも
連続した工程とし蒸着処理することができ、半導体装置
の製造時間を短縮することが可能になるなど優れた効果
を奏するものである。As described above, according to the present invention, since the aluminum vapor deposition step and the aluminum sintering step are performed simultaneously in one step, the manufacturing process of this type of semiconductor device is simplified as compared with the conventional manufacturing process, and therefore, The manufacturing cost of the semiconductor device can be reduced, and the vapor deposition process can be performed as a continuous process even when another metal layer is formed on the aluminum vapor deposition layer formed by the above-mentioned treatment process. It has excellent effects such as shortening
Claims (1)
面にアルミニュウムを蒸着するアルミニュウム蒸着工程
と、このアルミニュウム蒸着工程を経た前記半導体基板
を所定温度で加熱して当該アルミニュウムを半導体基板
内にシンタ処理するアルミニュウムシンタ工程とを含む
半導体装置の製造方法において、 前記アルミニュウム蒸着工程で前記半導体基板を250℃
から300℃の範囲で加熱したままアルミニュウムを蒸着
し、次いで該半導体基板を250℃から300℃の範囲に保持
したまま他の金属を該アルミニュウム層上に連続的に蒸
着する間にアルミニュウムを半導体基板内にシンタ処理
することを特徴とする半導体装置の製造方法。1. An aluminum vapor deposition step of heating a semiconductor substrate to deposit aluminum on the surface of the semiconductor substrate, and heating the semiconductor substrate that has undergone the aluminum vapor deposition step at a predetermined temperature to sinter the aluminum into the semiconductor substrate. In a method of manufacturing a semiconductor device including an aluminum sintering step for treating, the semiconductor substrate is heated to 250 ° C. in the aluminum vapor deposition step.
To 300 ° C. while depositing aluminum while being heated in the range, and then continuously depositing another metal on the aluminum layer while keeping the semiconductor substrate in the range of 250 ° C. to 300 ° C. A method of manufacturing a semiconductor device, characterized by performing a sintering process inside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62027868A JPH06103672B2 (en) | 1987-02-09 | 1987-02-09 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62027868A JPH06103672B2 (en) | 1987-02-09 | 1987-02-09 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63194327A JPS63194327A (en) | 1988-08-11 |
| JPH06103672B2 true JPH06103672B2 (en) | 1994-12-14 |
Family
ID=12232875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62027868A Expired - Fee Related JPH06103672B2 (en) | 1987-02-09 | 1987-02-09 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06103672B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5132507B2 (en) * | 1972-05-17 | 1976-09-13 | ||
| JPS5934647A (en) * | 1982-08-20 | 1984-02-25 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1987
- 1987-02-09 JP JP62027868A patent/JPH06103672B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63194327A (en) | 1988-08-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |